CN215420331U - Equalizer based on substrate integrated waveguide - Google Patents
Equalizer based on substrate integrated waveguide Download PDFInfo
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- CN215420331U CN215420331U CN202122013372.6U CN202122013372U CN215420331U CN 215420331 U CN215420331 U CN 215420331U CN 202122013372 U CN202122013372 U CN 202122013372U CN 215420331 U CN215420331 U CN 215420331U
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Abstract
The utility model provides an equalizer based on a substrate integrated waveguide, which comprises: the microstrip line resonator comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, a microstrip transmission line, a resistor and an FSIW resonator which are sequentially stacked from top to bottom, wherein the microstrip transmission line is arranged on the first dielectric substrate, metal through holes are formed in the center positions of the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate, and the resistor is respectively connected with the microstrip transmission line and the metal through holes on the first dielectric substrate; the third dielectric substrate is provided with a top dielectric substrate and a top metal layer, and the fourth dielectric substrate is provided with a bottom dielectric substrate, a bottom metal layer and a middle metal layer. Therefore, the microstrip transmission line and the FSIW are combined to form the equalizer, the size of the equalizer can be reduced on the premise of unchanged performance, and meanwhile, the transmission response of the equalizer can be adjusted in a millimeter wave frequency band.
Description
Technical Field
The utility model relates to the technical field of equalizers, in particular to an equalizer based on substrate integrated waveguide.
Background
Equalizers are often used to correct the amplitude-frequency characteristics of the transmission channel in wireless communication systems or to suppress signal distortion at the transmitter/receiver in radar systems. Conventional equalizer designs are mainly based on cavity resonators, stepped impedance stubs, coaxial cables, etc. The equalizer has special requirements for different frequency bands, different products and different working environments, and all problems are difficult to solve by using a general theory and a design method. Therefore, it is often necessary to construct an optimized physical model to simulate the calculations to make up for the theoretical deficiency. The adjustable range of the attenuation amplitude of the equalizer is increased, the production cost is reduced, and the constant pursuit of the design field of the equalizer is provided.
SUMMERY OF THE UTILITY MODEL
Equalizers are often used to correct the amplitude-frequency characteristics of the transmission channel in wireless communication systems or to suppress signal distortion at the transmitter/receiver in radar systems. Conventional equalizer designs are mainly based on cavity resonators, stepped impedance stubs, coaxial cables, etc. These implementations are large in size and difficult to integrate with other radio frequency devices. Substrate Integrated Waveguide (SIW) technology was first proposed in 2003, which provides a means for significantly reducing the volume of the resonator, and has good performance in terms of working bandwidth and insertion loss, and the SIW technology is widely used in filter design today.
At present, SIW filters are increasingly being used for microwave/millimeter wave equalizer designs. For example, in 2017, D.Zhang et al (D.Zhang, Q.Liu, D.Zhang, S.Wang and Y.Zhang, "A Gain Equalizer Based on Dual-Mode Circular Substrate Integrated Waveguide reactors," IEEE micro. Wireless Compound. Lett., vol.27, No.6, pp.539-541, June 2017.) designed equalizers Based on a Dual-Mode Circular SIW resonator, which had a more compact size than a conventional single-Mode SIW resonator. In 2020, Hao Peng et al (H.Peng et al, "Substrate Integrated microwave Equalizers and actuators With Surface Resistance," IEEE trans. micro. thermal techn., vol.68, No.4, pp.1487-1495, April 2020.) designed a novel SIW equalizer based on Surface impedance With better channel response. In general, however, there are some disadvantages to current techniques for designing equalizers based on SIW or FSIW (Folded Substrate Integrated Waveguide).
Among the related art, the equalizer has a large volume, which results in a large occupied space, and the equalizer has a non-adjustable problem in the millimeter wave frequency band.
In order to solve the technical problem, the utility model provides an equalizer based on a substrate integrated waveguide.
The technical scheme adopted by the utility model is as follows:
the embodiment of the utility model provides an equalizer based on a substrate integrated waveguide, which comprises: a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, a microstrip transmission line, a resistor and an FSIW resonator which are sequentially stacked from top to bottom, wherein,
the microstrip transmission line is arranged on the first dielectric substrate, metal via holes are formed in the center positions of the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate, and the resistors are respectively connected with the microstrip transmission line and the metal via holes in the first dielectric substrate;
the FSIW resonator comprises: the metal substrate comprises a top dielectric substrate, a bottom dielectric substrate and a middle metal layer arranged between the top dielectric substrate and the bottom dielectric substrate, wherein the top dielectric substrate and the bottom dielectric substrate are arranged in an overlapping mode and are mutually attached, the top metal layer is arranged on the upper surface of the top dielectric substrate, the bottom metal layer is arranged on the lower surface of the bottom dielectric substrate, and a group of metal through holes are formed in the top dielectric substrate and the bottom dielectric substrate;
the top dielectric substrate and the top metal layer are arranged at the third dielectric substrate, and the bottom dielectric substrate, the bottom metal layer and the middle metal layer are arranged at the fourth dielectric substrate.
In addition, the substrate integrated waveguide based equalizer proposed according to the above embodiment of the present invention may further have the following additional technical features:
according to one embodiment of the utility model, the equalizer based on the substrate integrated waveguide further comprises: and the adjusting screw is inserted into the fourth medium substrate from the bottom of the fourth medium substrate.
According to one embodiment of the utility model, the FSIW resonator has a length of a and a width of a/2, wherein a ranges from 2mm to 3 mm.
According to one embodiment of the utility model, the transmission response of the equalizer is related to the resistance value of the resistor, the smaller the attenuation of the transmission response.
According to one embodiment of the present invention, the resonant frequency of the equalizer is related to the depth of the adjusting screw inserted into the fourth dielectric substrate, and the smaller the depth of the adjusting screw inserted into the fourth dielectric substrate, the lower the resonant frequency.
According to one embodiment of the utility model, the resonance frequency of the equalizer is related to the pull-off length of the intermediate metal layer, the higher the resonance frequency.
According to one embodiment of the present invention, the material of the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate is Taconic RF-30 material with a dielectric constant of 3.
According to one embodiment of the present invention, the characteristic impedance of the input and output ports of the microstrip transmission line is 50 ohms.
According to one embodiment of the utility model, the working frequency band of the equalizer is 29 GHz-34 GHz.
According to one embodiment of the utility model, the equalizer achieves a gain control of-12 dB to-2 dB over the operating frequency band.
According to the technical scheme of the embodiment of the utility model, the microstrip transmission line and the FSIW are combined to form the equalizer, so that the size of the equalizer can be reduced on the premise of unchanged performance, and meanwhile, the transmission response of the equalizer can be adjusted in a millimeter wave frequency band.
Drawings
Fig. 1(a) is a schematic diagram of a square resonator of a SIW structure according to an embodiment of the present invention.
Fig. 1(b) is an equivalent circuit diagram of a SIW resonator according to an embodiment of the present invention.
Fig. 2 is an exploded view of a substrate integrated waveguide based equalizer according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of the structure of an FSIW resonator in accordance with one embodiment of the present invention.
Fig. 4 is an overall schematic diagram of a substrate integrated waveguide based equalizer according to an embodiment of the present invention.
Fig. 5 is a diagram of a simulated electric field profile within an equalizer of an embodiment of the present invention.
Fig. 6 is a diagram illustrating the attenuation of the transmission response of an equalizer according to an embodiment of the present invention as a function of the resistance of a resistor.
Fig. 7 is a perspective view of an inserted adjustment screw of an equalizer of one example of the present invention.
Fig. 8 is a graphical representation of the depth of transmission response of an equalizer of one example of the present invention as a function of the depth of insertion of the adjustment screw.
FIG. 9 is a graph showing the variation of transmission response depth of an equalizer according to an exemplary embodiment of the present invention as a function of the pull-out length of the middle metal layer
Fig. 10 is a diagram illustrating simulation and target transmission curves of a cascade of three equalizers according to an exemplary embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1(a) shows a square SIW resonator with metal layers on top and bottom, a dielectric substrate in the middle, and metal vias on the periphery. The electromagnetic properties of the SIW resonator are substantially identical to those of a conventional rectangular waveguide resonator. Since the SIW resonator is thin, only the TEm0n mode exists, and the resonance frequency can be obtained from the following equation:
c in the formulae (1) and (2)0Is the speed of light, ε, in vacuumrIs the relative dielectric constant of the substrate material, p is the distance between two adjacent metal vias (also called metal through holes), a and b are the width and length of the resonant cavity respectively, aeff、beffRespectively, the equivalent width and the equivalent length of the resonator.
In the examples of the present invention, aeffIs equal to beff. The equivalent circuit model of the SIW resonator can be simplified as shown in fig. 1(b), and the equivalent circuit model of the SIW resonator can be simplified as a circuit diagram consisting of a resistor R, an inductor L and a capacitor C, and the structure of the circuit diagram is shown in fig. 1 (b). The frequency response of the model can be expressed as
In the formula (3), Z0Is the characteristic impedance of the through line and ω is the operating frequency.
In the embodiment of the present invention, the size of the SIW resonant cavity can be obtained from the formula (1), and the center frequency of the SIW resonant cavity is f031GHz, a b. The cavity is then folded in half to yield the FSIW resonator.
Based on FSIW resonators, the embodiment of the utility model provides an equalizer based on substrate integrated waveguides, wherein a microstrip transmission line and FSIW are combined to form the equalizer, the size of the equalizer can be reduced on the premise of unchanged performance, and meanwhile, the transmission response of the equalizer can be adjusted in a millimeter wave frequency band.
Fig. 2 is an exploded view of a substrate integrated waveguide based equalizer according to an embodiment of the present invention.
As shown in fig. 2, the substrate integrated waveguide based equalizer comprises: the microstrip antenna comprises a first dielectric substrate 1, a second dielectric substrate 2, a third dielectric substrate 3, a fourth dielectric substrate 4, a microstrip transmission line 5, a resistor 6 and an FSIW resonator 7 which are sequentially stacked from top to bottom.
The microstrip transmission line 5 is arranged on the first dielectric substrate 1, a metal through hole 8 is arranged at the center positions of the first dielectric substrate 1, the second dielectric substrate 2, the third dielectric substrate 3 and the fourth dielectric substrate 4, the metal through hole 8 is used for coupling microwaves into the FSIW structure below the metal through hole to resonate, and the resistors 6 are respectively connected with the microstrip transmission line and the metal through hole on the first dielectric substrate 1; as shown in fig. 3, the FSIW resonator 7 includes: a top dielectric substrate 71, a bottom dielectric substrate 73 and a middle metal layer 72 arranged between the top dielectric substrate 71 and the bottom dielectric substrate 73, wherein the top dielectric substrate 71 and the bottom dielectric substrate 73 are stacked and attached to each other, the top metal layer 70 is arranged on the upper surface of the top dielectric substrate 71, the bottom metal layer 74 is arranged on the lower surface of the bottom dielectric substrate 73, a group of metal through holes are arranged on both the top dielectric substrate 71 and the bottom dielectric substrate 73, and W in fig. 3 is the distance between the middle metal layer and the edge of the fourth dielectric substrate; referring to fig. 2, a top dielectric substrate 71 and a top metal layer 70 are disposed on the third dielectric substrate 3, and a bottom dielectric substrate 73, a bottom metal layer 74 and a middle metal layer 72 are disposed on the fourth dielectric substrate 4.
That is to say, as shown in fig. 4, the equalizer in this embodiment includes four layers, a first layer where the first dielectric substrate 1 is located is used to place the microstrip transmission line 5, a second layer where the second dielectric substrate 2 is located is used to separate FSIW from a microstrip through-line, so that a microwave signal on the microstrip transmission line 5 enters a lower layer only from a metal via, rather than from other places, thereby achieving a better isolation effect, and a third layer where the third dielectric substrate 3 is located and a fourth layer where the fourth dielectric substrate 4 is located are upper and lower layers of FSIW, respectively. Thus, the volume of the SIW is reduced to 50% of the original size. FIG. 5 further illustrates the simulated electric field distribution inside an equalizer of an embodiment of the present invention, the electromagnetic field is coupled into the upper FSIW cavity through a metal via and oscillates in the half TE101 mode. The other half of the TE101 mode is coupled into the lower folded cavity.
The FSIW resonator has a cavity length of a and a width of a/2, where a ranges from 2mm to 3mm, e.g., a is 2.8 mm.
In the embodiment of the utility model, in order to change the transmission curve depth of the equalizer, the resistor 6 is arranged on the coupling line between the microstrip transmission line 5 and the resonant cavity, and the resistor 6 is connected with the microstrip transmission line 5 and the metal through hole on the first layer, so that the effect of absorbing and transmitting electromagnetic waves is realized. Fig. 6 shows transmission curves (S21) with different resistance values, and as the resistance value increases, the electromagnetic field coupled into the resonant cavity decreases, thereby decreasing transmission attenuation. That is, the transmitted response of the equalizer is related to the resistance of the resistor 6, and the smaller the resistance of the resistor, the smaller the attenuation of the transmitted response.
Therefore, the microstrip transmission line and the FSIW are combined to form the equalizer, the size of the equalizer can be reduced on the premise of unchanged performance, and meanwhile, the transmission response of the equalizer can be adjusted in a millimeter wave frequency band.
In one example of the present invention, the substrate integrated waveguide based equalizer may further include: and an adjusting screw inserted into the fourth dielectric substrate 4 from the bottom of the fourth dielectric substrate 4.
Specifically, the transmission response can also be adjusted by inserting a screw from the bottom to the fourth layer (fourth dielectric substrate 4). Fig. 7 shows a perspective view of the insertion of the adjusting screw, and fig. 8 shows the transmission coefficient of the equalizer as a function of the insertion depth of the screw, and it can be seen that as the depth increases, the equivalent capacitance increases, resulting in a shift of the resonant frequency to the left.
In one example of the present invention, the resonant frequency of the equalizer is related to the depth of the adjustment screw inserted into the fourth dielectric substrate, and the smaller the depth of the adjustment screw inserted into the fourth dielectric substrate, the lower the resonant frequency.
In one example, the resonant frequency of the equalizer is related to the pull-off length W of the middle metal layer (referring to the distance of the middle metal layer from the edge of the fourth dielectric substrate on the fourth layer), and the larger the pull-off length W of the middle metal layer, the higher the resonant frequency.
In this example, the resonant frequency of the equalizer is changed by changing the resistance value of the resistor, the insertion depth of the adjustment screw, and/or the pull-off length of the intermediate metal layer, and the transmission response (curve) of the equalizer can be changed by changing the resonant frequency, thereby realizing the adjustment of the transmission response of the equalizer.
In the equalizer of the present invention, the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate may be made of Taconic RF-30 material having a dielectric constant of 3. The characteristic impedance of the input and output ports of the microstrip transmission line 5 is 50 ohms. The working frequency band of the equalizer is 29 GHz-34 GHz. The equalizer realizes gain control of-12 dB to-2 dB on the working frequency band.
The working frequency band of the adjustable equalizer provided by the utility model is 29-34 GHz. The size of which is 50% of the equalizer based on the SIW technique. The straight line in the equalizer is a microstrip line with the characteristic impedance of 50 ohms, and the amplitude-frequency response of the microstrip line can be changed by adjusting the depth of a screw on the cavity into the cavity or pushing/pulling the position of the FSIW intermediate layer metal layer. The equalizer can realize gain control of-12 to-2 dB on the whole working frequency band.
It should be noted that by cascading multiple substrate integrated waveguide based equalizers of the embodiments of the present invention, higher attenuation and complex transmission response can be achieved. The inset in fig. 10 shows a triple tandem equalizer that may achieve certain transmission characteristics (dashed-dotted lines in fig. 10). Simulation results show that the equalizer can realize gain control of about 12db in a larger bandwidth, so that the difficult problem that most equalizers are not adjustable in a millimeter wave frequency band is solved.
In summary, the equalizer based on the substrate integrated waveguide according to the embodiment of the present invention satisfies a certain transmission response, further reduces the total volume of the system, and compared with the conventional cut-off substrate waveguide equalizer, the equalizer reduces 50% of the occupied space on the premise that the performance is not changed. Furthermore, the equalizer of the embodiment of the present invention has three methods for implementing the tunability of the equalizer: the impedance is changed, the distance between the metal layer of the middle layer and the edge of the fourth medium substrate is shortened/prolonged, and an adjusting screw rod is inserted, so that the tunability of the equalizer can be ensured.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The meaning of "plurality" is two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A substrate integrated waveguide based equalizer, comprising: a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, a microstrip transmission line, a resistor and an FSIW resonator which are sequentially stacked from top to bottom, wherein,
the microstrip transmission line is arranged on the first dielectric substrate, metal via holes are formed in the center positions of the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate, and the resistors are respectively connected with the microstrip transmission line and the metal via holes in the first dielectric substrate;
the FSIW resonator comprises: the metal substrate comprises a top dielectric substrate, a bottom dielectric substrate and a middle metal layer arranged between the top dielectric substrate and the bottom dielectric substrate, wherein the top dielectric substrate and the bottom dielectric substrate are arranged in an overlapping mode and are mutually attached, the top metal layer is arranged on the upper surface of the top dielectric substrate, the bottom metal layer is arranged on the lower surface of the bottom dielectric substrate, and a group of metal through holes are formed in the top dielectric substrate and the bottom dielectric substrate;
the top dielectric substrate and the top metal layer are arranged at the third dielectric substrate, and the bottom dielectric substrate, the bottom metal layer and the middle metal layer are arranged at the fourth dielectric substrate.
2. The substrate integrated waveguide-based equalizer of claim 1, further comprising: and the adjusting screw is inserted into the fourth medium substrate from the bottom of the fourth medium substrate.
3. The substrate integrated waveguide-based equalizer of claim 1, wherein the FSIW resonator has a length a and a width a/2, where a ranges from 2mm to 3 mm.
4. The substrate integrated waveguide-based equalizer of claim 1, wherein a transmission response of the equalizer is related to a resistance value of the resistor, and the smaller the resistance value of the resistor, the smaller the attenuation of the transmission response.
5. The substrate integrated waveguide-based equalizer according to claim 2, wherein a resonant frequency of the equalizer is related to a depth of insertion of the adjustment screw into the fourth dielectric substrate, and the lower the depth of insertion of the adjustment screw into the fourth dielectric substrate, the lower the resonant frequency.
6. The substrate integrated waveguide-based equalizer of claim 1, wherein a resonant frequency of the equalizer is related to a pull-off length of the intermediate metal layer, the greater the pull-off length of the intermediate metal layer, the higher the resonant frequency.
7. The substrate integrated waveguide-based equalizer according to claim 1, wherein the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate are made of Taconic RF-30 material with a dielectric constant of 3.
8. The substrate integrated waveguide-based equalizer of claim 3, wherein the input and output ports of the microstrip transmission line have a characteristic impedance of 50 ohms.
9. The substrate integrated waveguide-based equalizer of claim 8, wherein the equalizer has an operating frequency range of 29GHz to 34 GHz.
10. The substrate integrated waveguide-based equalizer of claim 9, wherein the equalizer achieves a gain control of between-12 dB and-2 dB over the operating frequency band.
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