CN215417256U - Silicon chip dual anti-counterfeiting mark based on super surface material - Google Patents
Silicon chip dual anti-counterfeiting mark based on super surface material Download PDFInfo
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- CN215417256U CN215417256U CN202120908944.4U CN202120908944U CN215417256U CN 215417256 U CN215417256 U CN 215417256U CN 202120908944 U CN202120908944 U CN 202120908944U CN 215417256 U CN215417256 U CN 215417256U
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Abstract
The utility model discloses a silicon chip double anti-counterfeiting mark based on a super surface material. The nano bricks with different sizes can generate different equivalent refractive indexes and can be regarded as different truncated waveguides, so that the nano bricks have mutually independent phase modulation functions in the directions of the long axis and the short axis and provide different phase delays. And constructing the nano-brick array by utilizing the corresponding relation between the size of the nano-bricks and the phase delay amount. When two beams of polarized light with polarization directions along the long axis and the short axis of the nano-brick are incident to the preset nano-brick array, two different high-fidelity holographic images can be observed, and the silicon chip double anti-counterfeiting method is used for realizing silicon chip double anti-counterfeiting. The super-surface nano brick array has an ultrathin structure and an extremely small geometric dimension, can be widely applied to the fields of optical anti-counterfeiting, information encryption and the like, and can be manufactured only by one simple photoetching process step, so that the super-surface nano brick array has the outstanding advantages of high safety, high integration level, flexible design, simplicity in processing and the like.
Description
Technical Field
The utility model relates to the technical field of super surfaces, in particular to a silicon chip double anti-counterfeiting mark based on a super surface material.
Background
With the vigorous development of semiconductor technology, silicon-based materials have important applications in low-voltage, low-power-consumption circuits, high-temperature-resistant circuits, micromechanical sensors, photoelectric integration and other aspects, chip manufacturing technologies based on silicon materials gradually tend to mature, the safety and confidentiality of the chip are concerned, and chip anti-counterfeiting technologies also become a hotspot research direction of information security research. The prior anti-counterfeiting technology generally has the hidden trouble of low safety, and also has the defects of large volume, easy damage, easy pollution and the like.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the prior art, the utility model aims to provide a silicon chip double anti-counterfeiting mark based on an ultra-surface material, which realizes anti-counterfeiting pattern observation by utilizing a transmission phase ultra-surface.
In order to achieve the purpose, the utility model provides a silicon chip double anti-counterfeiting mark based on an ultra-surface material, which is characterized in that: the anti-counterfeiting optical fiber laser comprises a substrate and a nano brick array etched on the substrate, wavelength screening and bidirectional phase modulation are simultaneously carried out on light waves, two beams of linearly polarized light with polarization directions along the long and short axis directions of the nano bricks are incident, two completely different images with high fidelity and no distortion are generated in a far field, and two holographic images cannot be observed under the condition that the linearly polarized light with other polarization directions is incident, so that the anti-counterfeiting function is realized.
Preferably, the substrate material is fused quartz, and the nano-brick unit structure material in the nano-brick array is monocrystalline silicon.
The silicon chip double anti-counterfeiting mark based on the super surface material is obtained by the following steps:
step S1: designing a nano-conversion unit structure by using electromagnetic simulation software CST and optimizing the nano-conversion unit structure under the working wavelength, and establishing a unit structure model by arranging the long axes of the nano-bricks along the x direction and the short axes along the y direction;
step S2: two incident lights with any different polarization states are normally incident to the nano-conversion unit structure, the super surface formed by the medium nano-brick arrays with different sizes on the long axis and the short axis can generate different phase delays, and the long axis and the short axis have stable transmissivity; through data screening, 16 different nano brick sizes are selected to provide phase delay combinations of 0, pi/2, pi and 3 pi/2 in two orthogonal polarizations;
step S3: selecting two target images, designing the hologram of the target images by using a Gerchberg-Saxton (G-S) phase optimization algorithm to obtain the phase distribution of corresponding holograms, and constructing a nano brick array by using the corresponding relation between the size of the nano bricks in a table and the phase delay amount to form a silicon chip of the super surface material, which can realize the double anti-counterfeiting function;
preferably, in step S1, the dimensional parameters of the nano-brick unit structure include length L, width W, height H, and side length C of the unit structure substrate.
Further, in the step S1, the substrate material is fused silica, and the nano brick material is monocrystalline silicon.
Further, in step S2, the silicon nanoblock may generate a phase retardation covering 0 to 2 pi in two orthogonal polarization directions, while ensuring that the transmittance is greater than 62% in most cases and can partially reach 90% or more.
Further, in step S3, the operating wavelength is 658 nm.
Further, in the step S3, two completely different images can be obtained when the two linearly polarized light beams with the polarization directions along the long and short axes of the nano brick are incident, and the holographic images are clear, have no distortion, and have high fidelity.
The utility model has the following advantages and beneficial effects:
the utility model provides a silicon chip double anti-counterfeiting technology based on a super surface material, which is mainly characterized in that a polarization sensitive super surface is constructed based on a silicon nano brick structure, an artificial super surface material is utilized to have two depths and controllable geometric dimensions, and the size of the geometric dimension of a nano structure is controlled to change an equivalent refractive index, so that multi-step phase control is realized, different phase delays can be generated in the long and short axis directions, two different characteristic patterns on the surface of a chip can be observed in a far field under specific conditions, and the double anti-counterfeiting purpose is achieved.
In the utility model, the anisotropic variable-dimension nano-structure polarization sensitive nano-brick unit structure is optimized, and the desired phase delay can be obtained under the incidence of two linearly polarized light beams along the long axis and the short axis of the nano-brick in the polarization direction by designing the geometric dimension of each pixel point in the nano-brick array corresponding to the nano-structure. The silicon nano-brick can generate phase delay amount covering 0 to 2 pi in two orthogonal polarization directions, and 16 kinds of nano-bricks with different structural parameters meeting the requirements are selected through data screening. And designing a hologram with the working wavelength of 658nm by using a classical G-S phase optimization algorithm, and obtaining the phase distribution of the hologram. And then the corresponding relation between the size of the nano-bricks and the phase delay amount is utilized to construct the nano-brick array. The super-surface holographic chip can reproduce two different holographic images in a far field according to different polarization states of incident light, namely the double-identification anti-counterfeiting of the silicon chip is realized through the super-surface material.
Drawings
FIG. 1 is a schematic diagram of the dimensional parameters of the nano-brick unit structure of the present invention;
FIG. 2 is a schematic view of a nano-turn array (partially) designed in the present invention;
FIG. 3 is a graph of 16 sets selected in the present invention to provide combinations of phase retardation of 0, π/2, π and 3 π/2 in two orthogonal polarizations and their transmittances.
Wherein: 1. a nano brick unit structure; 2. a substrate.
Detailed Description
The technical solution of the present invention will be further elaborated with reference to the drawings and the embodiments.
Example 1
The embodiment provides a silicon chip double anti-counterfeiting mark based on an ultra-surface material, which is designed and prepared by the following method steps:
step S1: designing a nano-conversion unit structure by using electromagnetic simulation software CST and optimizing the nano-conversion unit structure under the working wavelength, and establishing a unit structure model by arranging the long axes of the nano-bricks along the x direction and the short axes along the y direction;
step S2: two incident lights with any different polarization states are normally incident to the nano-conversion unit structure, the super surface formed by the medium nano-brick arrays with different sizes on the long axis and the short axis can generate different phase delays, and the long axis and the short axis have stable transmissivity; through data screening, 16 different nano brick sizes are selected to provide phase delay combinations of 0, pi/2, pi and 3 pi/2 in two orthogonal polarizations;
step S3: selecting two target images, designing the hologram of the target images by using a Gerchberg-Saxton (G-S) phase optimization algorithm to obtain the phase distribution of corresponding holograms, and constructing a nano brick array by using the corresponding relation between the size of the nano bricks in a table and the phase delay amount to form a silicon chip of the super surface material, which can realize the double anti-counterfeiting function;
by utilizing the super-surface double channels, the desired phase delay can be obtained under the incidence of two linearly polarized light beams along the long and short axes of the nano brick in the polarization direction. And designing the hologram by using a classical G-S phase optimization algorithm, and obtaining the phase distribution of the hologram. And then the corresponding relation between the size of the nano-bricks and the phase delay amount is utilized to construct the nano-brick array. The super-surface holographic chip can reproduce two different holographic images in a far field according to different polarization states of incident light, namely the double-identification anti-counterfeiting of the silicon chip is realized through the super-surface material.
The design principle and method of the present invention are further explained as follows:
1. optimized anisotropic variable-dimension nano-structure polarization sensitive nano-brick unit structure
The following description will take the unit structure of the rectangular parallelepiped nano-brick as an example. The length, width and height of the nano brick unit structure are all sub-wavelength sizes.
As shown in fig. 1, a xoy rectangular coordinate system is established, the long axes of the nano-bricks are arranged along the x direction, and the short axes are arranged along the y direction, and due to the difference of the sizes of the long and short axes of the polarization-sensitive nano-brick unit structure 1, the electromagnetic responses in the two directions will be different. The dimension parameters of the nano brick unit structure are optimized by the electromagnetic simulation software CST, as shown in FIG. 2, including the height H, length L, width W of the nano brick unit structure 1 and the side length C of the unit structure substrate. When polarized light in any two different polarization states under working wavelength is normally incident to the nano brick unit structure, a super surface consisting of medium nano brick arrays with different sizes on a long axis and a short axis can generate different and independently regulated phase delays, 16 different nano brick sizes are screened, and phase delay combinations of 0, pi/2, pi and 3 pi/2 are provided in two orthogonal polarizations, namely, the size parameters of the optimized nano brick unit structure 1 are shown in fig. 3.
Each nano-brick in the optimally designed nano-brick unit structure can be regarded as a truncated waveguide, and nano-bricks with different sizes can generate different equivalent refractive indexes, so that different phase delays are provided in the x direction and the y direction. By designing the geometric dimension of each pixel point in the nano-brick array corresponding to the nano-structure, the desired phase delay can be obtained under the incidence of two linearly polarized light beams along the long axis and the short axis of the nano-brick in the polarization direction. More importantly, the function of phase modulation is independent of each other in two orthogonal directions, which forms the basic phase modulation principle of polarization multiplexed based two-channel holography.
2. And realizing the principle of double anti-counterfeiting of the silicon chip based on the super surface material.
The nano brick unit structure can be equivalent to a truncated waveguide, and nano bricks with different sizes can generate different equivalent refractive indexes, so that different phase delays are provided in the x direction and the y direction, and when polarized light in any two different polarization states is normally incident to the nano brick unit structure under the working wavelength by designing the geometric dimension of each pixel point in the nano brick array corresponding to the nano structure, a super surface formed by medium nano brick arrays with different sizes on a long shaft and a short shaft can generate different and independently regulated phase delays.
3. A design method for nano brick array arrangement.
(1) The super-surface array structure is composed of a substrate and a nano brick array on the substrate, the nano brick array is formed by arranging polarization sensitive nano conversion unit structures with different lengths and widths and same heights at equal intervals in the directions of x and y axes, and the schematic diagram of the nano brick array is shown in fig. 2.
(2) Firstly, the diffraction angles of two holographic images are determined according to the length and width ratio of two target images, and the two holographic images with the working wavelength of 658nm are designed by utilizing a classical G-S phase optimization algorithm.
Wherein the substrate is fused silica, and the nano brick unit structure is a monocrystalline silicon nano brick, but not limited thereto. The super surface array structure has a transmissive operation mode, but is not limited thereto.
In summary, the silicon chip dual anti-counterfeiting mark based on the super surface material is mainly prepared by the following steps:
(1) designing a nano-conversion unit structure by using electromagnetic simulation software CST and optimizing the nano-conversion unit structure under the working wavelength, and establishing a unit structure model by arranging the long axes of the nano-bricks along the x direction and the short axes along the y direction;
(2) two incident lights with any different polarization states are normally incident to the nano-conversion unit structure, the super surface formed by the medium nano-brick arrays with different sizes on the long axis and the short axis can generate different phase delays, and the long axis and the short axis have stable transmissivity; through data screening, 16 different nano brick sizes are selected, so that phase delay combinations of 0, pi/2, pi and 3 pi/2 are provided in two orthogonal polarizations, incident light in two arbitrary different polarization states is normally incident to a nano rotating unit structure, different phase delays can be generated on a super surface consisting of medium nano brick arrays with different sizes on a long axis and a short axis, and the long axis and the short axis have stable transmissivity;
(3) two target images are selected, a Gerchberg-Saxton (G-S) phase optimization algorithm is utilized to design the hologram of the target images, corresponding hologram phase distribution is obtained, and a nano brick array is constructed by utilizing the corresponding relation between the size of the nano bricks and the phase delay in a table, so that the silicon chip of the super surface material capable of realizing the double anti-counterfeiting function is formed.
Example 1 is further illustrated below with reference to the accompanying drawings:
in the silicon chip dual anti-counterfeiting mark based on the super-surface material in the embodiment, aiming at the two beams of linearly polarized light with the polarization directions along the long axis and the short axis of the nano brick, the linearly polarized light is incident to the polarization multiplexing dual-channel holographic plate designed by the super-surface material, two high-definition fidelity holographic images can be observed at the same time, otherwise, two original images which can be regarded as the anti-counterfeiting mark cannot be observed, and the anti-counterfeiting function is realized.
In this embodiment, the nano-unit structure is composed of single crystal silicon nano-bricks, the substrate is composed of fused silica, the design wavelength λ is 658nm, and for the wavelength, the nano-unit structure is optimally simulated by the electromagnetic simulation software CST, the unit structure size C is set to 250nm, and the height H is set to 310 nm. In order to optimize the length and width of the silicon nanoblock, the length and width of the nanoblock were scanned from 40nm to 200nm, respectively, in 5nm steps. The silicon nano-brick can generate phase retardation covering 0 to 2 pi in two orthogonal polarization directions, and simultaneously ensures that the transmissivity is more than 62% in most cases and can reach more than 90% in part. Through data screening, 16 kinds of nano bricks with different structural parameters meeting the requirements are selected, and the detailed geometric parameters of the nano bricks are shown in figure 3.
In this embodiment, two holographic images are selected. The phase distribution of the holographic plate based on the metamaterial material is optimized using the G-S (Gerchberg-Saxton) algorithm.
In this embodiment, the super-surface array structure is composed of a monocrystalline silicon nano-brick array and a fused quartz substrate, where the nano-brick array is composed of polarization-sensitive nano-brick unit structures with different lengths and widths, and the sizes of the nano-brick unit structures are 310nm and 250nm, and the nano-brick array is arranged at equal intervals in the x-axis direction and the y-axis direction.
When the linear polarization light with the polarization direction along the long axis and the short axis of the nano brick is incident to the polarization multiplexing dual-channel holographic sheet designed by the metamaterial, two high-definition fidelity holographic images can be observed at the same time, otherwise, two original images which can be regarded as anti-counterfeiting marks cannot be observed, and the anti-counterfeiting function is realized.
The double anti-counterfeiting mark manufactured based on the super surface material is arranged on a silicon chip to achieve the anti-counterfeiting effect.
In summary, the polarization-sensitive nano brick unit structure is optimized, and the size parameters of the nano brick unit structure are optimized through electromagnetic simulation software, so that when polarized light in any two different polarization states under the working wavelength is normally incident to the nano brick unit structure, a super surface consisting of medium nano brick arrays with different sizes on a long axis and a short axis can generate different and independently-controlled phase delays; designing a hologram by using a classical G-S phase optimization algorithm, wherein the phase distribution of an amplitude multiplexing holographic plate designed on the basis of the metamaterial is generated by nano-brick arrays with different sizes; the nano-brick unit structures with different sizes are arranged at equal intervals to form a super-surface array structure, and when two beams of linearly polarized light with polarization directions along the long axis and the short axis of the nano-brick are incident to a polarization multiplexing dual-channel holographic sheet designed by a super-surface material, two high-definition fidelity holographic images can be observed at the same time. The utility model realizes double anti-counterfeiting of the silicon chip by the super surface material.
In this embodiment, the silicon chip dual anti-counterfeit label based on the super surface material at least has the following technical effects:
(1) the silicon chip anti-counterfeiting mark has high integration level and flexible design.
(2) The super surface material (i.e. super surface array structure) has small size, light weight, compact structure and easy integration with other optical devices.
Claims (4)
1. The utility model provides a dual false proof mark of silicon chip based on super surface material which characterized in that: the anti-counterfeiting optical fiber laser comprises a substrate (2) and a nano brick array etched on the substrate (2), wavelength screening and bidirectional phase modulation are carried out on light waves at the same time, two beams of linearly polarized light with polarization directions along the long and short axis directions of the nano bricks are incident, two completely different images with high fidelity and no distortion are generated in a far field, and two holographic images cannot be observed under the condition that the linearly polarized light with other polarization directions is incident, so that the anti-counterfeiting function is realized.
2. The silicon chip dual anti-counterfeiting mark based on the super surface material as claimed in claim 1, wherein: the substrate (2) is made of fused quartz, and the nano brick unit structure (1) in the nano brick array is made of monocrystalline silicon.
3. The silicon chip dual anti-counterfeiting mark based on the super surface material as claimed in claim 1 or 2, wherein:
the dual anti-counterfeiting mark is designed by the following method:
each nano brick unit structure (1) is equivalent to a cut-off waveguide, so that two incident lights in any polarization states are normally incident to the nano brick unit structure (1), different phase delays can be generated on a super surface consisting of medium nano brick arrays with different sizes on a long axis and a short axis, and the long axis and the short axis have stable transmissivity; through data screening, 16 different nano brick sizes are selected to provide phase delay combinations of 0, pi/2, pi and 3 pi/2 in two orthogonal polarizations;
optimizing the structural parameters of the nano brick array structure, specifically:
electromagnetic simulation software CST is used for designing a nano-conversion unit structure and optimizing the nano-conversion unit structure under the working wavelength, so that the long axis of the nano brick is arranged along the x direction, the short axis of the nano brick is arranged along the y direction to establish a unit structure model silicon nano brick which can generate a phase delay covering 0 to 2 pi in two orthogonal polarization directions, and meanwhile, the transmissivity is ensured to be greater than 62 percent and can reach more than 90 percent under a specific size;
two target images are selected, the hologram of the target images is designed by using a Gerchberg-Saxton phase optimization algorithm, the phase distribution of corresponding holograms is obtained, and a nano brick array is constructed by using the corresponding relation between the size of the nano bricks and the phase delay in a table, so that the silicon chip anti-counterfeiting mark with the super-surface material, which can realize the double anti-counterfeiting function, is formed.
4. The silicon chip dual anti-counterfeiting mark based on the super surface material as claimed in claim 3, wherein:
the working wavelength is 658 nm; the dimension parameters of the nano brick unit structure (1) comprise the length L, the width W, the height H and the side length C of the unit structure substrate of the nano brick.
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