CN215342641U - Micro-LED device - Google Patents
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- CN215342641U CN215342641U CN202120446133.7U CN202120446133U CN215342641U CN 215342641 U CN215342641 U CN 215342641U CN 202120446133 U CN202120446133 U CN 202120446133U CN 215342641 U CN215342641 U CN 215342641U
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Abstract
The utility model provides a Micro-LED device, comprising: the distributed Bragg reflector insulating layer extends from the intersection of the substrate and the epitaxial layer along the direction of the epitaxial layer towards the transparent current extension layer and covers the transparent current extension layer, the side wall and the bottom wall of an etching area are formed in a covering mode, and the passivation layer covers the distributed Bragg reflector insulating layer. The distributed Bragg reflector insulating layer is additionally arranged in the traditional Micro-LED device, light in other non-light-emitting directions can be reflected to the light-emitting direction, the light is emitted along the substrate direction, namely the light-emitting direction, the light escaping from other directions is reduced, the light-emitting efficiency of the Micro-LED is improved, the bonding layer is respectively deposited on the first electrode and the second electrode, and the bonding layer is bonded with the driving back plate to further ensure the light-emitting power of the Micro-LED device.
Description
Technical Field
The utility model relates to the technical field of LEDs, in particular to a Micro-LED device.
Background
The Micro Light-Emitting Diode (Micro-LED) has self-luminous display characteristics, has the characteristics of long service life, high brightness, low power consumption, small volume, high resolution and the like as an all-solid-state LED, and can be applied to extreme environments such as high temperature or radiation and the like. Compared with an Organic Light Emitting Diode (OLED) which is also capable of self-emitting Display, the Micro-LED has the advantages of high efficiency, long service life, relatively stable material which is not easily affected by the environment, and capability of avoiding the occurrence of ghost phenomenon.
However, the smaller the size of the Micro-LED device, the more the light emitting efficiency of the Micro-LED device cannot be guaranteed, and the optimal light emitting efficiency cannot be achieved.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims to provide a Micro-LED device, which can solve the problem that the smaller the size of the Micro-LED device in the prior art, the light emitting efficiency cannot reach the best.
A Micro-LED device comprising:
the device comprises a substrate, an epitaxial layer, a transparent current expansion layer, a distributed Bragg reflector insulating layer, a passivation layer, a first electrode, a second electrode and a bonding layer;
the epitaxial layer is epitaxially grown on one side of the substrate;
the transparent current spreading layer is deposited on one side of the epitaxial layer, and the transparent current spreading layer and the epitaxial layer are provided with etching areas which start to etch from the transparent current spreading layer to the substrate direction and etch to part of the epitaxial layer;
the distributed Bragg reflector insulating layer extends from the intersection of the substrate and the epitaxial layer along the direction of the epitaxial layer towards the transparent current spreading layer, covers the transparent current spreading layer and covers the side wall and the bottom wall of the etching area, the passivation layer covers the distributed Bragg reflector insulating layer and is etched from the passivation layer towards the substrate direction to form a first electrode hole and a second electrode hole, wherein the first electrode hole is etched to the bottom wall, and the second electrode hole is etched to the transparent current spreading layer;
the first electrode and the second electrode respectively extend from the first electrode hole and the second electrode hole towards the direction far away from the substrate and respectively cover one side of the passivation layer;
the bonding layer is respectively deposited on one side of the first electrode and one side of the second electrode.
Optionally, the epitaxial layer includes a buffer layer, a U-GaN layer, an N-GaN layer, an MQW layer, and a P-GaN layer stacked layer by layer from one side of the substrate, wherein the etching region is formed by etching from the transparent current spreading layer toward the substrate and etching to the N-GaN layer.
Optionally, the first electrode is a P electrode, the second electrode is an N electrode, the P electrode is formed by the first electrode contacting the transparent current spreading layer in the first electrode hole, and the N electrode is formed by the second electrode contacting the N-GaN layer in the second electrode hole.
Optionally, the substrate material includes a sapphire substrate, a GaN substrate, or a SiC substrate.
Optionally, the bonding layer material includes a titanium indium alloy.
Optionally, the passivation layer material comprises SiN or SiO2。
Optionally, the distributed bragg reflector insulating layer material includes alternately stacked TiO2And SiO2。
Optionally, the transparent current spreading layer material includes ITO.
Optionally, the first electrode and the second electrode comprise titanium or titanium-aluminum-titanium-gold.
The embodiment of the utility model has the following beneficial effects:
the utility model provides a Micro-LED device, comprising: the distributed Bragg reflector insulating layer extends from the intersection of the substrate and the epitaxial layer along the direction of the epitaxial layer towards the transparent current extension layer and covers the transparent current extension layer, the side wall and the bottom wall of an etching area are formed in a covering mode, and the passivation layer covers the distributed Bragg reflector insulating layer. The distributed Bragg reflector insulating layer is additionally arranged in the traditional Micro-LED device, light in other non-light-emitting directions can be reflected to the light-emitting direction, the light is emitted along the substrate direction, namely the light-emitting direction, the light escaping from other directions is reduced, the light-emitting efficiency of the Micro-LED is improved, the bonding layer is respectively deposited on the first electrode and the second electrode, and the bonding layer is bonded with the driving back plate to further ensure the light-emitting power of the Micro-LED device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Wherein:
FIG. 1 is a schematic structural diagram of a Micro-LED device according to an embodiment of the present invention;
FIGS. 2 to 7 are schematic structural changes of a manufacturing process of the Micro-LED device shown in FIG. 1 according to an embodiment of the present invention;
fig. 8 is a top view of a structure of a Micro-LED device as shown in fig. 1 according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a Micro-LED device according to an embodiment of the present invention, and the Micro-LED device shown in fig. 1 includes: the structure comprises a substrate 1, an epitaxial layer, a transparent current extension layer 7, a distributed Bragg reflector insulating layer 8, a passivation layer 9, a first electrode 12, a second electrode 13 and a bonding layer 14 (15);
wherein, an epitaxial layer is epitaxially grown on one side of the substrate 1;
a transparent current extension layer 7 is deposited on one side of the epitaxial layer, and the transparent current extension layer 7 and the epitaxial layer are provided with etching areas which start to etch from the transparent current extension layer 7 towards the substrate 1 and etch to part of the epitaxial layer;
the distributed Bragg reflector insulating layer 8 extends from the intersection of the substrate 1 and the epitaxial layer along the direction of the epitaxial layer towards the transparent current expansion layer 7, covers the transparent current expansion layer 7 and forms a side wall and a bottom wall of an etching area, the passivation layer 9 covers the distributed Bragg reflector insulating layer 8, and forms a first electrode hole 10 and a second electrode hole 11 by etching from the passivation layer 9 towards the substrate 1, wherein the first electrode hole is etched to the bottom wall, and the second electrode hole is etched to the transparent current expansion layer 7;
the first electrode 12 and the second electrode 13 extend from the first electrode hole 10 and the second electrode hole 11 respectively towards the direction far away from the substrate 1 and cover one side of the passivation layer 9 respectively;
bonding layers are deposited on the sides of the first electrode 12 and the second electrode 13, respectively.
The utility model provides a Micro-LED device, comprising: the distributed Bragg reflector insulating layer extends from the intersection of the substrate 1 and the epitaxial layer along the direction of the epitaxial layer towards the transparent current extension layer and covers the transparent current extension layer, a side wall and a bottom wall forming an etching area are covered, and the passivation layer covers the distributed Bragg reflector insulating layer. The distributed Bragg reflector insulating layer is additionally arranged in the traditional Micro-LED device, light in other non-light-emitting directions can be reflected to the light-emitting direction, the light is emitted along the substrate direction, namely the light-emitting direction, the light escaping from other directions is reduced, the light-emitting efficiency of the Micro-LED is improved, the bonding layer is respectively deposited on the first electrode and the second electrode, and the bonding layer is bonded with the driving back plate to further ensure the light-emitting power of the Micro-LED device.
For a better understanding of the structure of the present invention, the description of the structure of the present invention will be continued with reference to fig. 1 in conjunction with fig. 2 to 8.
With continued reference to fig. 1, the epitaxial layer of the Micro-LED device shown in fig. 1 includes a buffer layer 2, a U-GaN layer 3, an N-GaN layer 4, an MQW layer 5, and a P-GaN layer 6 stacked one on another from a side of a substrate 1, wherein an etching region is formed by etching from the transparent current spreading layer toward the substrate 1 to the N-GaN layer.
In the preparation process, firstly, an epitaxial wafer is prepared on the substrate 1 shown in fig. 1, and the epitaxial wafer required by the utility model is obtained by performing epitaxial growth on the substrate 1 shown in fig. 1, and the epitaxial wafer is shown in fig. 2.
The epitaxial growth is to grow a single crystal layer with certain requirement and same crystal orientation with the substrate on the single crystal substrate or the substrate as if the original crystal extends outwards by a section.
Specifically, an epitaxial wafer as shown in fig. 2 is obtained by an epitaxial growth technique on a substrate 1, and the epitaxial wafer structure includes: the substrate 1, and a buffer layer 2 ', a U-GaN layer 3 ', an N-GaN layer 4 ', an MQW layer 5 ' and a P-GaN layer 6 ' stacked layer by layer from one side of the substrate 1.
Further, the substrate 1 material may be a sapphire substrate, a GaN (gallium nitride) substrate, or a SiC (silicon carbide) substrate, or the like.
After the epitaxial growth is performed to obtain the epitaxial wafer structure shown in fig. 2, the structure is further processed to obtain the epitaxial layer in the Micro-LED device structure of the present invention.
Specifically, the step etching process is performed on the epitaxial wafer structure shown in fig. 2: first, the P-GaN layer 6 'is etched toward the substrate 1 to etch the N-GaN layer 5' so that the N-GaN layer 5 'is exposed to form an etched region having a bottom wall constituted by a side where the N-GaN layer 5' is exposed and a sidewall constituted by a thickness-direction sidewall to which the etched portion of the P-GaN layer 6 'and the MQW layer 5' is exposed, and then the structure is edge-etched to obtain the epitaxial structure shown in fig. 3.
The edge etching may be understood as performing edge etching on the peripheral edge of the uppermost layer of the epitaxial wafer, that is, the peripheral edge of the PGaN, with the same preset width by using an etching method, where the direction is from the PGaN to the substrate until the end of etching to the substrate. That is, etching is performed from the P-GaN layer 6' to the substrate 1, and the structure shown in fig. 3, that is, the epitaxial layer and the substrate 1 shown in fig. 1 according to the embodiment of the present invention are obtained, wherein the epitaxial layer includes the buffer layer 2, the U-GaN layer 3, the N-GaN layer 4, the MQW layer 5, and the P-GaN layer 6, which are stacked layer by layer from one side of the substrate 1.
In order to obtain the transparent current spreading layer 7 in the Micro-LED device structure of the present invention as shown in fig. 1, further processing of the structure shown in fig. 3 is required during the fabrication process.
Specifically, a transparent current spreading layer (not shown) is deposited on the P-GaN layer 6 shown in fig. 3 through a sputtering process, and then the transparent current spreading layer is remained in a specific region through a photoetching and etching process, so that the transparent current spreading layer is only deposited on one side of the epitaxial layer, namely the P-GaN layer 6, to obtain a transparent current spreading layer 7, and finally the structure shown in fig. 4 is obtained through the preparation.
The transparent current spreading layer 7 is used to uniformly distribute current, and the material of the layer may be ITO (indium tin oxide), etc., which is not specifically limited by the examples herein.
In order to obtain the insulating layer 8 of the distributed bragg reflector in the Micro-LED device structure of the present invention as shown in fig. 1, further processing is required for the structure shown in fig. 4 during the fabrication process.
It should be noted that the Distributed Bragg reflector may also be called a Distributed Bragg Reflection (DBR), and therefore, the following embodiments are described by simply referring to the DBR.
Specifically, the DBR insulating layer 8' is deposited by magnetron sputtering or the like on the structure shown in fig. 4.
It should be noted that the DBR insulating layer 8' is typically made of a multilayer TiO2And SiO2Alternating stack and at least two layers, wherein each layer has a thickness related to the emission wavelength, typically 1/4 in the example,
further, the DBR insulating layer serves to reflect the escaping light to the light emitting direction. The DBR insulating layer is prepared in a manner not specifically limited by way of example, and the structure shown in fig. 5 is finally obtained through the above-mentioned preparation process.
Wherein, the DBR insulating layer material comprises alternately stacked TiO2(titanium dioxide) and SiO2(silica) and the like, and examples thereof are not particularly limited.
In order to obtain the passivation layer 9 in the structure of a Micro-LED device according to the utility model as shown in fig. 1, further processing of the structure shown in fig. 5 is required during the manufacturing process.
Specifically, a passivation layer 9 'is deposited over the DBR insulating layer 8'.
Wherein, the passivation layer material can be SiN (silicon nitride) or SiO2(silica) and the like, which are not specifically limited by way of example herein, and the structure shown in fig. 6 is finally obtained through the above-described preparation process.
In order to obtain the first electrode 12 and the second electrode 13 in the Micro-LED device structure of the present invention as shown in fig. 1, the structure shown in fig. 6 needs to be further processed during the manufacturing process to obtain the electrode holes required for forming the above-mentioned electrodes.
Specifically, openings are formed in the passivation layer 9 'and the DBR layer 8' shown in fig. 6: the first electrode hole 10, i.e., the N electrode hole, is opened to the N-GaN layer 4, and the second electrode hole 11, i.e., the P electrode hole, is opened to the transparent current spreading layer 7, referring to a block structure formed by dotted lines shown in fig. 7.
Further, after the structure shown in fig. 6 is opened, an electrode layer is deposited on the opened structure (not shown) by evaporation or sputtering, and the like, and the desired electrode shape is obtained by photolithography, etching, and the like, so as to obtain the first electrode 12 and the second electrode 13 shown in fig. 7.
Wherein the first electrode 12 is an N electrode, the second electrode 13 is a P electrode, and further, the N electrode is formed by the first electrode 12 contacting the N-GaN layer 4 in the first electrode hole 10, and the P electrode is formed by the second electrode 13 contacting the transparent current spreading layer 7 in the second electrode hole 11.
The material of the first electrode 12 and the second electrode 13 may be titanium gold or titanium aluminum titanium gold, which is not limited in this embodiment.
Preferably, a bonding layer may be plated on one side of the electrodes, respectively, so as to further improve the light emitting efficiency.
Specifically, a layer of bonding layer metal is plated on one side of the electrode shown in fig. 7, so as to obtain a first bonding layer 13 and a second bonding layer 14.
The bonding layer material may be a substance having a property equivalent to that of a titanium indium alloy, which is not specifically limited in this example, and the bonding effect of the layer of metal and the driving backplane may be better, so as to achieve better light emitting efficiency.
Finally, after the bonding layer of fig. 7 is prepared, the structure of the embodiment shown in fig. 1 can be obtained, please refer to fig. 8, where fig. 8 is a top view of the structure shown in fig. 1, and fig. 8 shows the first bonding layer 13, the second bonding layer 14, and the passivation layer 9.
The utility model provides a Micro-LED device, comprising: the distributed Bragg reflector insulating layer extends from the intersection of the substrate and the epitaxial layer along the direction of the epitaxial layer towards the transparent current extension layer and covers the transparent current extension layer, the side wall and the bottom wall of an etching area are formed in a covering mode, and the passivation layer covers the distributed Bragg reflector insulating layer. The distributed Bragg reflector insulating layer is additionally arranged in the traditional Micro-LED device, light in other non-light-emitting directions can be reflected to the light-emitting direction, the light is emitted along the substrate direction, namely the light-emitting direction, the light escaping from other directions is reduced, the light-emitting efficiency of the Micro-LED is improved, the bonding layer is respectively deposited on the first electrode and the second electrode, and the bonding layer is bonded with the driving back plate to further ensure the light-emitting power of the Micro-LED device. When the structure is used for splicing and packaging, the passivation layer covers the insulating layer of the distributed Bragg reflector, so that the problem of mutual crosstalk of single Micro-LED after splicing and packaging can be solved.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (9)
1. A Micro-LED device, comprising:
the device comprises a substrate, an epitaxial layer, a transparent current expansion layer, a distributed Bragg reflector insulating layer, a passivation layer, a first electrode, a second electrode and a bonding layer;
the epitaxial layer is epitaxially grown on one side of the substrate;
the transparent current spreading layer is deposited on one side of the epitaxial layer, and the transparent current spreading layer and the epitaxial layer are provided with etching areas which start to etch from the transparent current spreading layer to the substrate direction and etch to part of the epitaxial layer;
the distributed Bragg reflector insulating layer extends from the intersection of the substrate and the epitaxial layer along the direction of the epitaxial layer towards the transparent current spreading layer, covers the transparent current spreading layer and covers the side wall and the bottom wall of the etching area, the passivation layer covers the distributed Bragg reflector insulating layer and is etched from the passivation layer towards the substrate direction to form a first electrode hole and a second electrode hole, wherein the first electrode hole is etched to the bottom wall, and the second electrode hole is etched to the transparent current spreading layer;
the first electrode and the second electrode respectively extend from the first electrode hole and the second electrode hole towards the direction far away from the substrate and respectively cover one side of the passivation layer;
the bonding layer is respectively deposited on one side of the first electrode and one side of the second electrode.
2. The Micro-LED device according to claim 1, wherein the epitaxial layer comprises a buffer layer, a U-GaN layer, an N-GaN layer, a MQW layer and a P-GaN layer stacked one on top of the other from the substrate side, wherein the etched region is formed by etching from the transparent current spreading layer towards the substrate and to the N-GaN layer.
3. The Micro-LED device of claim 2, wherein the first electrode is an N-electrode and the second electrode is a P-electrode, wherein the N-electrode is formed by the first electrode contacting the N-GaN layer in the first electrode hole and the P-electrode is formed by the second electrode contacting the transparent current spreading layer in the second electrode hole.
4. A Micro-LED device according to claim 1, wherein the substrate material comprises a sapphire substrate, a GaN substrate or a SiC substrate.
5. A Micro-LED device according to claim 1, wherein the bonding layer material comprises a titanium indium alloy.
6. The Micro-LED device of claim 1, wherein the passivation layer material comprises SiN or SiO2。
7. The Micro-LED device of claim 1, wherein the distributed bragg reflector insulating layer material comprises alternately stacked TiO' s2And SiO2。
8. A Micro-LED device according to claim 1, wherein the transparent current spreading layer material comprises ITO.
9. A Micro-LED device according to claim 1, wherein the first electrode and the second electrode material comprise titanium gold or titanium aluminum titanium gold.
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| CN202120446133.7U CN215342641U (en) | 2021-03-02 | 2021-03-02 | Micro-LED device |
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| CN202120446133.7U CN215342641U (en) | 2021-03-02 | 2021-03-02 | Micro-LED device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115411160A (en) * | 2022-11-03 | 2022-11-29 | 江西兆驰半导体有限公司 | Full-color Micro-LED chip and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115411160A (en) * | 2022-11-03 | 2022-11-29 | 江西兆驰半导体有限公司 | Full-color Micro-LED chip and preparation method thereof |
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