CN215179861U - Nano zinc oxide gas sensitive element - Google Patents
Nano zinc oxide gas sensitive element Download PDFInfo
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- CN215179861U CN215179861U CN202120336781.7U CN202120336781U CN215179861U CN 215179861 U CN215179861 U CN 215179861U CN 202120336781 U CN202120336781 U CN 202120336781U CN 215179861 U CN215179861 U CN 215179861U
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Abstract
The utility model relates to a gas sensor especially relates to a nanometer zinc oxide gas sensor. The nano zinc oxide gas sensor comprises: an electrode substrate; and the sensitive thin film layer is formed on the electrode substrate, wherein the sensitive thin film layer is a zinc oxide nano material. The utility model discloses a nanometer zinc oxide gas sensor not only has higher uns dimethylhydrazine gas detection sensitivity, still has faster response speed and recovery time and lower operating temperature, is favorable to commercialization ground wide application.
Description
Technical Field
The utility model relates to a gas sensor especially relates to a nanometer zinc oxide gas sensor.
Background
Unsym-dimethyl hydrazine (C)2H8N2) Not only doThe composite fuel is an important main fuel or a chemical raw material with more purposes, but the composite fuel is inflammable, explosive, high in toxicity, and toxic to nervous, digestive, respiratory and reproductive systems, and even canceration can be caused by long-term contact with higher-concentration unsymmetrical dimethylhydrazine. And the unsymmetrical dimethylhydrazine has leakage hazard in the processes of storage, transportation and use, so that the unsymmetrical dimethylhydrazine in the environment needs to be monitored with high sensitivity. The gas sensor obtained based on the semiconductor metal oxide such as zinc oxide can convert the information such as the concentration thereof into a recognizable electric signal. The sensitive film is the most critical part for determining the performance of the gas sensor, and besides the properties of the material, the surface morphology, the characteristic dimension and other structural properties of the sensitive film have a significant influence on the sensitivity, response/recovery time and stability of the sensor.
In view of this, the present invention is especially provided.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects existing in the prior art, the utility model aims at providing a nano zinc oxide gas sensitive element.
Specifically, the nano zinc oxide gas sensor comprises:
an electrode substrate; and
a sensitive thin film layer formed on the electrode substrate,
wherein the content of the first and second substances,
the sensitive film layer is made of zinc oxide nano material.
The utility model discloses in, nanometer zinc oxide gas sensitive element has higher uns dimethylhydrazine gas detection sensitivity, can be used to uns dimethylhydrazine's detection.
Preferably, the thickness of the sensitive thin film layer is 600-2000 nm.
Preferably, the resistivity of the sensitive thin film layer is 100-1000 k omega-m.
Preferably, the particle size of the zinc oxide nano material is 550-650 nm.
Preferably, the zinc oxide nano material is in an ultrathin shell structure.
Preferably, in the above technical means, the zinc oxide nanomaterial has a dodecahedron-like structure composed of ultra-thin sheets.
Preferably, the electrode substrate has a planar structure.
Preferably, the sensitive film layer has a length, width and thickness dimension ratio of 1.5 mm: 1.0 mm: 600-2000 nm.
Preferably, the thickness ratio of the sensitive thin film layer to the electrode substrate is 600-6000 nm: 0.3 mm.
The beneficial effects of the utility model reside in that:
(1) the nano zinc oxide gas sensitive element of the utility model is characterized by using a scanning electron microscope, a transmission electron microscope, a powder X-ray diffractometer and a resistance tester respectively, and the result shows that the nano zinc oxide gas sensitive element comprises an electrode substrate and a sensitive film layer coated on the electrode substrate; the thickness of the sensitive film layer is 600-2000 nm, and the sensitive film layer is made of a zinc oxide nano material, wherein the zinc oxide nano material is composed of superfine nano particles (the particle size is about 600 nm); the resistivity of the sensitive thin film layer is 100-1000 k omega-m.
(2) Will the utility model provides a nanometer zinc oxide gas sensitive element carries out many times, many batches of tests under the different concentrations to uns dimethylhydrazine gas, can know by the result, when uns dimethylhydrazine's concentration is low to 0.5ppm, still can detect out its accuracy and effectively. In addition, the nano zinc oxide gas sensitive element has the response speed of about 30s to unsymmetrical dimethylhydrazine gas, the recovery time of about 280s, the working temperature of 130-150 ℃, and the detection stability, reversibility and repeatability are good.
(3) The utility model discloses a nanometer zinc oxide gas sensor not only has higher uns dimethylhydrazine gas detection sensitivity, still has faster response speed and recovery time and lower operating temperature, is favorable to commercialization ground wide application.
Drawings
Fig. 1 is a schematic diagram of a nano zinc oxide gas sensor provided by the present invention;
in the figure: 1. a sensitive thin film layer; 2. an electrode substrate.
Figure 2 is the TEM picture of the zinc oxide nano-material provided by the utility model.
Figure 3 is the SEM picture of the zinc oxide nano-material provided by the utility model.
Figure 4 is the X-ray diffraction pattern of the zinc oxide nanomaterial provided by the utility model.
Fig. 5 is a TEM image of ZIF-8 provided by the present invention.
Fig. 6 is an SEM image of ZIF-8 provided by the present invention.
Fig. 7 is a schematic diagram of the response of the gas sensor to unsymmetrical dimethylhydrazine gas provided by the present invention.
Fig. 8 is a schematic diagram of the cyclic response of the gas sensor to unsymmetrical dimethylhydrazine gas provided by the present invention.
Detailed Description
The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
The examples do not show the specific techniques or conditions, according to the technical or conditions described in the literature in the field, or according to the product specifications. The reagents or instruments used are conventional products available from regular distributors, not indicated by the manufacturer.
Example 1
This embodiment provides a nano zinc oxide gas sensor, as shown in fig. 1, the nano zinc oxide gas sensor includes:
an electrode substrate 2; and
a sensitive thin film layer 1, the sensitive thin film layer 1 being formed on the electrode substrate 2,
wherein the content of the first and second substances,
in the embodiment, the sensitive film layer 1 is a zinc oxide nano material; the thickness of the sensitive film layer 1 is 600-2000 nm; the resistivity of the sensitive film layer 1 is 100-1000 k omega-m; the particle size of the zinc oxide nano material is 550-650 nm; the zinc oxide nano material is of an ultrathin shell structure; the zinc oxide nano material has a structure of a dodecahedron-like structure consisting of ultrathin sheets; the electrode substrate 2 is in a planar structure;
the size ratio of the length, the width and the thickness of the sensitive film layer 1 is 1.5 mm: 1.0 mm: 600-2000 nm; the thickness ratio of the sensitive thin film layer 1 to the electrode substrate 2 is 600-6000 nm: 0.3 mm.
The zinc oxide nanomaterial provided in this embodiment may be the zinc oxide nanomaterial provided in embodiment 2, or may be a commercially available product having the above structure.
Example 2
The embodiment provides a zinc oxide nano material, and a preparation method of the zinc oxide nano material comprises the following steps:
(1) respectively dissolving 0.291g of zinc nitrate hexahydrate and 0.328g of 2-methylimidazole in 25mL of methanol to obtain a zinc source solution and a 2-methylimidazole solution;
(2) mixing the zinc source solution and the 2-methylimidazole solution, continuously stirring for 30 minutes, standing for 24 hours, centrifuging at 6000rpm to obtain a precipitate, washing 3 times with ethanol, drying, and drying at 60 ℃ to obtain ZIF-8;
the morphology of the resulting ZIF-8 is shown in FIGS. 5 and 6; as can be seen from FIG. 5, the resulting ZIF-8 is a solid structure with a relatively smooth surface; as can be seen from FIG. 6, the resulting ZIF-8 was a tetrakaidecahedron with no pores on the surface;
(3) uniformly dispersing the ZIF-8 into an alcohol solution according to the concentration of 1g/L to obtain a ZIF-8 solution;
(4) dispersing the ZIF-8 solution on a 4-inch smooth silicon wafer, and drying to obtain a silicon wafer loaded with ZIF-8 with the thickness of 8-12 nm;
(5) carrying out an oxygen ion implantation process on the silicon wafer loaded with the ZIF-8 with the thickness of 8-12 nm; wherein the oxygen flow rate of the oxygen ion implantation process is 50sccm, the voltage is 100V, the power is 700W, and the processing time is 5 min; and directly converting ZIF-8 into a corresponding zinc oxide nano material after treatment.
The appearance and structure of the zinc oxide nanomaterial of the present embodiment are characterized as shown in fig. 2, fig. 3, and fig. 4; as can be seen from fig. 2, the zinc oxide nanomaterial has a hollow structure and a better framework structure; as can be seen from fig. 3, the surface of the zinc oxide nanomaterial consists of a large number of ultrafine nanoparticles, and statistically has a rich pore structure; as can be seen from fig. 4, the zinc oxide nanomaterial is zinc oxide. Therefore, after the ZIF-8 is treated by the oxygen ion implantation process, the framework of the ZIF-8 keeps a better hollow structure, the surface of the ZIF-8 is composed of ultrafine nano particles, and a large number of pores ensure smooth inlet and outlet of the unsymmetrical dimethylhydrazine gas.
Test example 1
The gas sensitivity test of the test example is performed on the nano zinc oxide gas sensor of the example 1, and specifically, the following is performed:
(1) the test method comprises the following steps: placing the nano zinc oxide gas-sensitive element of the embodiment 1 in unsymmetrical dimethylhydrazine gas with the concentration of 0.5-40 ppm;
and (3) testing conditions are as follows: the testing voltage at two ends of the nano zinc oxide gas sensitive element is constant at 5V, and the working temperature is 130-150 ℃;
and (3) testing results: the measured response and unsymmetrical dimethylhydrazine concentration gradient are shown in figure 7; as can be seen from fig. 7, the nano zinc oxide gas sensor of example 1 has a good response to unsymmetrical dimethylhydrazine with a concentration range of 0.5-40 ppm, wherein the response time is about 30s, the recovery time is about 280s, and the detection sensitivity can reach 0.5 ppm.
(2) The test method comprises the following steps: placing the nano zinc oxide gas sensor of the example 1 in unsymmetrical dimethylhydrazine gas with the concentration of 10ppm for a cyclicity test;
and (3) testing conditions are as follows: the testing voltage at two ends of the nano zinc oxide gas sensitive element is constant at 5V, and the working temperature is 130-150 ℃;
and (3) testing results: the results are shown in FIG. 8; as can be seen from FIG. 8, the nano zinc oxide gas sensor of example 1 has good stability, reversibility and repeatability for unsymmetrical dimethylhydrazine testing.
In conclusion, the utility model provides a nanometer zinc oxide gas sensor can carry out high sensitive short-term test to uns dimethylhydrazine to have good stability, reversibility and repeatability.
Although the invention has been described in detail in the foregoing by way of general description, specific embodiments and experiments, it will be apparent to those skilled in the art that certain modifications and improvements may be made thereto based on the invention. Therefore, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (9)
1. A nano zinc oxide gas sensor, comprising:
an electrode substrate; and
a sensitive thin film layer formed on the electrode substrate,
wherein the content of the first and second substances,
the sensitive film layer is made of zinc oxide nano material.
2. The nano zinc oxide gas sensor according to claim 1, wherein the thickness of the sensitive thin film layer is 600-2000 nm.
3. The nano zinc oxide gas sensor of claim 2, wherein the resistivity of the sensitive thin film layer is 100-1000 k Ω -m.
4. The nano zinc oxide gas sensor of claim 1, wherein the zinc oxide nano material has a particle size of 550 to 650 nm.
5. The nano zinc oxide gas sensor of claim 4, wherein the zinc oxide nano material is an ultrathin shell structure.
6. The nano zinc oxide gas sensor of claim 5, wherein the zinc oxide nano material is a dodecahedron-like structure consisting of ultra-thin sheets.
7. The nano zinc oxide gas sensor of claim 1, wherein the electrode substrate is shaped as a planar structure.
8. The nano zinc oxide gas sensor of claim 1, wherein the sensitive thin film layer has a length, width and thickness dimension ratio of 1.5 mm: 1.0 mm: 600-2000 nm.
9. The nano zinc oxide gas sensor according to claim 8, wherein the thickness ratio of the sensitive thin film layer to the electrode substrate is 600-6000 nm: 0.3 mm.
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| CN202120336781.7U CN215179861U (en) | 2021-02-05 | 2021-02-05 | Nano zinc oxide gas sensitive element |
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| CN202120336781.7U CN215179861U (en) | 2021-02-05 | 2021-02-05 | Nano zinc oxide gas sensitive element |
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