CN215178187U - Infrared temperature measurement sensing chip - Google Patents
Infrared temperature measurement sensing chip Download PDFInfo
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- CN215178187U CN215178187U CN202121152254.7U CN202121152254U CN215178187U CN 215178187 U CN215178187 U CN 215178187U CN 202121152254 U CN202121152254 U CN 202121152254U CN 215178187 U CN215178187 U CN 215178187U
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- thermopile
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Abstract
The utility model provides an infrared temperature measurement sensing chip belongs to temperature measurement sensing chip technical field. The infrared temperature measurement sensing chip comprises a glass wafer provided with a groove and a thermopile microstructure film which is bonded by a silicon-glass wafer and covers the groove; electrode through holes positioned on the glass wafer are formed around the groove, and metal is filled in the electrode through holes to be used as a lead; the thermopile microstructure film comprises an infrared absorption layer bonded on the upper surface of the supporting layer and a thermopile module bonded on the lower surface of the supporting layer, the thermopile module covers the groove to form a closed cavity in a vacuum state, the input end or the output end of the thermopile module is connected with one end of the electrode through hole, and the other end of the electrode through hole is connected with an external electrode. The utility model provides an infrared temperature measurement sensing chip has avoided the heat loss of gaseous heat convection formation under the normal atmospheric temperature environment, has improved the sensitivity of temperature measurement.
Description
Technical Field
The utility model relates to a temperature measurement sensing chip technical field especially relates to an infrared temperature measurement sensing chip.
Background
The infrared detector is a core device of an infrared thermal imaging system and an infrared gas and temperature sensor, and is mainly divided into a refrigeration type and a non-refrigeration type. Compared with a refrigeration type infrared detector, the non-refrigeration type infrared detector does not need a refrigeration device in the system, and has the characteristics of small size, light weight and low power consumption. The infrared sensor and the infrared thermal image product adopting the non-refrigeration type infrared detector have advantages in the aspects of the service life, reliability, volume, weight, cost performance and the like of the whole machine, and are more suitable for being popularized and used in the civil field.
The uncooled infrared detector mainly comprises a pyroelectric detector, a thermopile detector and a microbolometer. Currently, infrared detectors for human body temperature measurement applications mainly use infrared thermopiles. Due to the temperature of the human body, the human body can continuously emit infrared rays to the environment. When infrared rays irradiate the surface of the chip of the thermopile detector, a thermocouple structure on the surface of the chip generates a temperature difference potential, and the temperature difference potential is used for calibrating the temperature of a human body. The infrared temperature measurement sensing chip prepared by using the MEMS technology mainly forms a thermopile structure by connecting thermocouple arrays in series. When the sensor receives infrared radiation, the voltages of the thermocouples on the infrared temperature measurement sensing chip are superposed and output, the test temperature is converted into a voltage signal, and the output signal intensity and the temperature measurement sensitivity are improved.
In addition, the conventional thermopile detector improves the sensitivity of the device by coating the surface of the thermocouple unit with an infrared absorbing material such as carbon black. Thermopile thin film structures are fragile and can be easily broken during coating operations resulting in device damage. In addition, there is a possibility of inconsistency in chip performance due to different lots of packages, differences in instrumentation and differentiation in worker operations.
At present, an infrared temperature measurement sensing chip manufactured based on an MEMS technology generally has important influence on temperature measurement sensitivity in a normal-temperature environment, and is mainly reflected in inaccurate temperature measurement sensitivity caused by partial heat brought away by gas heat convection in the normal-temperature environment.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model aims at solving the technical problem that the heat loss that the gaseous heat convection caused under the normal atmospheric temperature environment influences the sensitivity of temperature measurement, for this reason, the utility model provides an infrared temperature measurement sensing chip has avoided the heat loss that gaseous heat convection formed under the normal atmospheric temperature environment, has improved the sensitivity of temperature measurement.
In order to achieve the above object, the utility model provides a following technical scheme:
an infrared temperature measurement sensing chip comprises a glass wafer provided with a groove and a thermopile microstructure film which is bonded by a silicon-glass wafer and covers the groove;
electrode through holes positioned on the glass wafer are formed in the periphery of the groove, and metal is filled in the electrode through holes to serve as a lead;
the thermopile microstructure film comprises an infrared absorption layer bonded on the upper surface of a supporting layer and a thermopile module bonded on the lower surface of the supporting layer, the thermopile module covers a closed cavity which is formed above the groove in a vacuum state, the input end or the output end of the thermopile module is connected with one end of the electrode through hole, and the other end of the electrode through hole is connected with an external electrode.
Preferably, the closed cavity is filled with an inert gas.
Preferably, the inert gas includes at least one of argon, nitrogen and helium.
Preferably, the thermopile module includes a thermopile module disposed on a lower surface of the support layer, the thermopile module being formed of a thermocouple array formed by at least two thermocouple units connected in series, the thermocouple units being preferably of a filament type, and the thermopile module being preferably one of a triangle, a long rectangle, and a short rectangle in shape.
Preferably, the thermocouple unit is a semiconductor type thermocouple unit or a metal type thermocouple unit, and the material of the semiconductor type thermocouple unit is preferably a single crystal semiconductor or a polycrystalline semiconductor.
Preferably, the semiconductor type thermocouple unit is composed of a P-type thermocouple arm and an N-type thermocouple arm, and an end of the P-type thermocouple arm and an end of the N-type thermocouple arm are in ohmic connection through a metal wire.
Preferably, the metal-type thermocouple unit is composed of two different metal thermocouple arms, ends of the two different metal thermocouple arms are connected through a metal wire, and the two different metal-type thermocouple units are preferably made of one of antimony/bismuth, copper/nickel-copper alloy and manganese/copper-nickel alloy.
Preferably, the material structure of the infrared absorption layer is at least one of nano silicon grass, nano holes and nano forest structures, and the thickness of the infrared absorption layer is preferably 20-1000 nm.
Preferably, the material of the support layer comprises at least one of silicon, silicon nitride and silicon oxide, and the thickness of the support layer is preferably 0.5-5 μm.
Preferably, the glass wafer is a high borosilicate glass. The utility model discloses for prior art have following beneficial effect:
1. the utility model provides an infrared temperature measurement sensing chip, owing to used the wafer level packaging technology, sealed the temperature sensing unit in the cavity, avoided the influence of external environment atmosphere and pollutant to the sensing unit, improved the operational reliability of device; through sealed packaging, the sensitive unit avoids the influence of external convection gas, isolates the heat loss caused by the gas convection heat conduction band, and improves the sensitivity and precision of measurement.
2. The utility model provides an infrared temperature measurement sensing chip through adopting wafer level packaging technology, has reduced later stage encapsulation cost, has improved the uniformity of device encapsulation, simultaneously, has improved oxidation resistance and has improved life.
3. The utility model provides an infrared temperature measurement sensing chip directly acts on the film for preventing external atmospheric pressure, and the emergence of the cracked phenomenon of film that leads to, and then influence sensitivity. The utility model discloses a pack inert gas in airtight cavity, make inside and outside atmospheric pressure reach the balance.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of a glass wafer according to the present invention;
FIG. 3 is a schematic diagram of a thermopile microstructure film of different structures;
FIG. 4 is an enlarged view of a thermocouple cell in a thermopile microstructured film;
FIG. 5 is a diagram of the semiconductor-type infrared temperature sensor chip of the present invention;
FIG. 6 is a diagram of the preparation of the metal type infrared temperature measurement sensor chip of the present invention;
in the figure, 1. a glass wafer; 2. sealing the cavity; 3. an electrode through hole; 4. an electrode; 5. a support layer; 6. a thermopile module; 7. an infrared absorbing layer; 8. tin balls; 9. a thermopile microstructure film; 10. a metal wire; a P-type thermocouple arm or an a-metal thermocouple arm; an N-type thermocouple arm or a B-metal type thermocouple arm; 13. a cold end; 14. a hot end.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the drawings of the embodiments of the present invention are combined to clearly and completely describe the technical solutions of the embodiments of the present invention, and obviously, the described embodiments are some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.
As shown in fig. 1-6, the utility model provides an infrared temperature measurement sensing chip, which comprises a glass wafer 1 with a groove and a thermopile microstructure film 9 which is bonded by a silicon-glass wafer and covers the groove;
electrode through holes 3 positioned on the glass wafer 1 are formed in the periphery of the groove, and metal is filled in the electrode through holes 3 to serve as a lead;
the thermopile microstructure film 9 comprises an infrared absorption layer 7 bonded on the upper surface of the supporting layer 5 and a thermopile module 6 bonded on the lower surface of the supporting layer 5, the thermopile module 6 covers the groove to form a vacuum-state closed cavity 2, the input end or the output end of the thermopile module is connected with one end of the electrode through hole 3, and the other end of the electrode through hole 3 is connected with an external electrode.
In the above structure of the present invention, there is no special requirement for the shape of the groove, as shown in fig. 2, it is preferably a square groove; the specific structure of the thermopile microstructure film 9 is not particularly limited, and fig. 3 exemplarily shows different thermopile microstructure film 9 structures; the utility model discloses an among the above-mentioned structure, thermopile module 6 is sealed in one side and the external environment of airtight cavity 2 and keeps apart, and infrared absorbing layer 7 exposes in the external environment at the another side of supporting layer 5.
In another embodiment of the present invention, in order to prevent the thermopile microstructure film 9 from being crushed by the external air, the enclosed cavity 2 is filled with an inert gas.
In the present invention, the inert gas includes at least one of argon, nitrogen and helium.
In the present invention, the thermopile module 6 includes a thermopile module disposed on the lower surface of the support layer, and the thermopile module is composed of a thermocouple array formed by at least two thermocouple units connected in series; preferably: the thermopile module 6 is formed by symmetrically arranging four thermopile modules on the surface of the supporting layer 5; the thermopile module is a thermocouple array formed by connecting a plurality of thermocouple units in series, and the number of the thermocouple units connected in series is not limited, and at least two thermocouple units are ensured.
In the present invention, the thermopile module has one of a triangular shape, a long rectangular shape and a short rectangular shape; in the utility model, the number of the thermopile modules is not specially limited, the number of the thermopile modules is preferably four, and the four thermopile modules are symmetrically arranged on four edges of the square groove of the glass wafer 1; the four thermopile modules are electrically connected in series through metal wires, input and output electrodes are led out from two ends of the series connection and are connected with one end of the electrode through hole 3 through a solder ball 8; the thermopile module is a thermocouple array formed by connecting a plurality of thermocouple units in series; the cold end 13 of the thermocouple array is arranged on the frame of the glass wafer 1, and the hot end 14 of the thermocouple array is suspended above the square groove of the glass wafer 1; the thermoelectric electromotive force of the thermoelectric stack module is formed between the cold end 13 and the hot end 14 of the thermocouple array; the total thermoelectric power of the infrared temperature measurement sensing chip is the sum of the thermoelectric power of the four thermopile modules and is in direct proportion to the incident infrared energy.
In the thermopile module, the length and the number of thermocouple units are positively correlated with the sensitivity of the sensor; thermocouple units of the triangular thermopile module are arranged on the side length of a square groove of the glass wafer 1, and the length of the thermocouple units changes linearly; the long strip rectangular thermopile module has fewer thermocouple units to meet the corresponding sensitivity requirement, while the short strip rectangular thermopile module needs more thermocouple units to meet the corresponding sensitivity requirement.
In the present invention, the thermocouple unit is a filament type.
In the present invention, the thermocouple unit is a semiconductor type thermocouple unit.
In the present invention, as shown in fig. 3, the semiconductor-type thermocouple unit is composed of a P-type thermocouple arm 11 and an N-type thermocouple arm 12, and an ohmic connection is realized between the end of the P-type thermocouple arm 11 and the end of the N-type thermocouple arm 12 through a metal wire 10.
In the present invention, the semiconductor-type thermocouple unit is made of a single crystal semiconductor or a polycrystalline semiconductor; mainly comprises semiconductor materials such as silicon, germanium, gallium arsenide, bismuth antimonide and the like, and preferably is crystalline silicon.
In the present invention, the thermocouple unit is a metal type thermocouple unit.
In the present invention, the metal type thermocouple unit is composed of two different metal thermocouple arms, and the ends of the two different metal thermocouple arms are connected by a metal wire; as shown in fig. 3, for convenience of description, two different metal thermocouple arms are defined as an a metal thermocouple arm and a B metal type thermocouple arm, and reference numerals thereof corresponding to a P type thermocouple arm and an N type thermocouple arm are denoted by the same reference numerals.
In the present invention, the metal type thermocouple unit is made of one of antimony/bismuth, copper/nickel-copper alloy and manganese/copper-nickel alloy, preferably copper/nickel-copper alloy.
The utility model discloses in, the material structure of infrared absorption layer 7 is at least one kind in nanometer silicon grass, nanometer hole and the nanometer forest structure, and the platinum black that the nanometer platinum forest in preferably comprises the black silicon that nanometer silicon grass constitutes and the nanometer forest structure.
In the present invention, the thickness of the infrared absorption layer 7 is 20 to 1000 nm.
In the present invention, the material of the support layer 5 includes at least one of silicon, silicon nitride and silicon oxide, and further, is preferably a silicon/silicon oxide material.
The utility model discloses in, the thickness of supporting layer 5 is 0.5 ~ 5 mu m, and supporting layer 5 mainly used supports the infrared absorbing layer and the thermopile module 6 on its two sides.
In the present invention, the metal wire 10 has a width of 50 to 200 μm and a thickness of 50 to 500 nm; in the present invention, the metal wire 10 may be made of aluminum, titanium, chromium, silver, copper, bismuth, etc., preferably aluminum.
In the present invention, the glass wafer 1 is a high borosilicate glass, and preferably, the glass wafer 1 and the support layer 5 have a similar thermal expansion coefficient.
The thickness of the thermopile microstructure film 9 is determined by the thickness of the silicon device layer of the SOI wafer; the thickness of the film can be accurately controlled to be 1-4 mu m by wet chemical etching and using the buried oxide layer of the SOI wafer as an etching stop layer.
The utility model provides a preparation method of infrared temperature measurement sensing chip that above-mentioned semiconductor type thermocouple unit was made, including following step: as shown in figure 5 of the drawings,
step 1: preparation of thermopile microstructure film 9 on support layer 5
a. Cleaning an SOI wafer on the insulator, and carrying out high-temperature oxidation on a device layer of the SOI wafer to obtain an oxide layer with a certain thickness;
b. depositing a semiconductor layer with a specific thickness on the oxide layer on the surface of the SOI device layer;
c. preparing structures of a P-type thermocouple arm 11 and an N-type thermocouple arm 12 in a specific region of a semiconductor layer through photoetching, masking, ion implantation and etching processes;
d. depositing a metal layer on the surface of the thermopile module;
e. preparing a photoetching mask on the metal layer;
f. forming a metal lead and an electrode by wet etching to realize the electric connection of the thermopile;
step 2: preparation of glass wafer grooves and through holes
g. Cleaning the glass wafer 1, and photoetching the glass wafer 1 to form a cavity mask;
h. preparing a glass wafer groove structure by wet etching;
i. processing through holes at corresponding positions on two sides of the glass wafer 1 by using a laser drilling technology, and then preparing metal leads in the through holes by using an electroplating process;
and step 3: bonding and packaging process
j. Cleaning the SOI wafer and the glass wafer 1 with an organic solvent, aligning the silicon device layer of the SOI wafer and the glass wafer 1 and carrying out anodic bonding;
k. removing the silicon substrate and the buried oxide layer of the bonded SOI wafer by using a wet etching process;
preparing a black silicon structure of the infrared absorption layer 7 on the surface of a silicon device layer of the SOI wafer by using a deep reactive plasma dry etching process; or depositing platinum metal on the surface of the silicon device layer, and preparing a platinum black structure through electrochemical oxygen electrode oxidation;
and m, connecting a solder ball 8 at the bottom of the electrode through hole 3 filled with the metal wire.
The utility model also provides a preparation method of the infrared temperature measurement sensing chip that above-mentioned metal type thermocouple unit was made, including following step:
step 1: preparation of thermopile microstructure film on supporting layer
a. Cleaning an SO I wafer on the insulator, and carrying out high-temperature oxidation on a device layer of the SOI wafer to obtain an oxide layer with a certain thickness;
b. preparing a photoetching mask A on an oxide layer on the surface of the SOI device layer;
c. depositing a metal layer A on the photoetching mask A;
d. preparing a metal thermocouple arm A11, a metal lead A and an electrode A by a metal stripping process;
e. preparing a B photoetching mask on the surface of the device layer;
f. depositing a metal layer B with a specific thickness on the photoetching mask B;
g. and preparing the metal B thermocouple arm 12, the metal B lead and the metal B electrode by a metal stripping process.
Step 2: preparation of glass wafer grooves and through holes
h. Cleaning the glass wafer, and photoetching the glass wafer 1 to form a cavity mask;
i. preparing a glass wafer groove structure by wet etching;
j. processing electrode through holes 3 at corresponding positions on two sides of a glass wafer 1 by using a laser drilling technology, and then preparing metal leads in the electrode through holes 3 by using an electroplating process;
and step 3: bonding and packaging process
k. Cleaning the SOI wafer and the glass wafer 1 with an organic solvent, aligning the silicon device layer of the SOI wafer and the glass wafer, and bonding the silicon device layer and the glass wafer with an anode;
removing the silicon substrate and the buried oxide layer of the bonded SOI wafer by using a wet etching process;
m, preparing a black silicon structure of the infrared absorption layer 7 on the surface of the silicon device layer of the SOI wafer by using a deep reactive plasma dry etching process; or depositing platinum metal on the surface of the silicon device layer, and preparing a platinum black structure through electrochemical oxygen electrode oxidation;
and n, connecting a solder ball 8 at the bottom of the electrode through hole 3 filled with the metal wire.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. An infrared temperature measurement sensing chip is characterized by comprising a glass wafer with a groove and a thermopile microstructure film which is bonded by a silicon-glass wafer and covers the groove;
electrode through holes positioned on the glass wafer are formed in the periphery of the groove, and metal is filled in the electrode through holes to serve as a lead;
the thermopile microstructure film comprises an infrared absorption layer bonded on the upper surface of a supporting layer and a thermopile module bonded on the lower surface of the supporting layer, the thermopile module covers a closed cavity which is formed above the groove in a vacuum state, the input end or the output end of the thermopile module is connected with one end of the electrode through hole, and the other end of the electrode through hole is connected with an external electrode.
2. The infrared temperature measurement sensing chip of claim 1, wherein the enclosed cavity is filled with an inert gas.
3. The infrared thermometric sensing chip of claim 1, wherein the thermopile module comprises a thermopile module disposed on the lower surface of the supporting layer, the thermopile module is formed by a thermocouple array formed by at least two thermocouple units connected in series, the thermocouple units are filament type, and the thermopile module has one of a triangular shape, a long rectangle and a short rectangle.
4. The infrared temperature measurement sensing chip of claim 3, wherein the thermocouple unit is a semiconductor type thermocouple unit or a metal type thermocouple unit, and the semiconductor type thermocouple unit is made of a single crystal semiconductor or a polycrystalline semiconductor.
5. The infrared thermometric sensing chip according to claim 4, wherein the semiconductor type thermocouple unit is composed of a P-type thermocouple arm and an N-type thermocouple arm, and an end of the P-type thermocouple arm and an end of the N-type thermocouple arm are in ohmic connection through a metal wire.
6. The infrared temperature measurement sensing chip of claim 4, wherein the metal type thermocouple unit is composed of two different metal thermocouple arms, ends of the two different metal thermocouple arms are connected through a metal wire, and the two different metal type thermocouple units are made of one of antimony/bismuth, copper/nickel-copper alloy and manganese/copper-nickel alloy.
7. The infrared thermometric sensing chip of any one of claims 1-6, wherein the glass wafer is a high borosilicate glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121152254.7U CN215178187U (en) | 2021-05-27 | 2021-05-27 | Infrared temperature measurement sensing chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121152254.7U CN215178187U (en) | 2021-05-27 | 2021-05-27 | Infrared temperature measurement sensing chip |
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| CN215178187U true CN215178187U (en) | 2021-12-14 |
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