CN214992008U - Structure for measuring molten silicon liquid level of crystal pulling furnace and crystal pulling furnace - Google Patents
Structure for measuring molten silicon liquid level of crystal pulling furnace and crystal pulling furnace Download PDFInfo
- Publication number
- CN214992008U CN214992008U CN202120884689.4U CN202120884689U CN214992008U CN 214992008 U CN214992008 U CN 214992008U CN 202120884689 U CN202120884689 U CN 202120884689U CN 214992008 U CN214992008 U CN 214992008U
- Authority
- CN
- China
- Prior art keywords
- auxiliary plate
- molten silicon
- liquid level
- linear light
- crystal pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 90
- 239000010703 silicon Substances 0.000 title claims abstract description 90
- 239000007788 liquid Substances 0.000 title claims abstract description 78
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000003760 hair shine Effects 0.000 abstract description 2
- 210000003141 lower extremity Anatomy 0.000 abstract 2
- 230000008859 change Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a measure structure and crystal pulling stove of crystal pulling stove molten silicon liquid level height, this structure is including fixing the accessory plate in the draft tube lower part, linear light source and camera device, the medial surface that the accessory plate is close the draft tube center is the plane, and the medial surface perpendicular to molten silicon liquid level of accessory plate, the lower limb of the medial surface of accessory plate is horizontal line segment, the linear light that linear light source sent shines on accessory plate and molten silicon liquid level, the contained angle between the lower limb of the linear light of shining on the medial surface of accessory plate and medial surface is theta, contained angle theta is greater than 0 degree and is less than 90 degrees, shine on the medial surface that the linear light on the molten silicon liquid level can reflect to the accessory plate, camera device can shoot light on the accessory plate medial surface. The utility model provides a structure and crystal pulling furnace of measurement crystal pulling furnace molten silicon liquid level can improve the accuracy to molten silicon liquid level to draft tube bottom distance measurement, guarantee that this distance is in predetermineeing the scope to can ensure the quality of production crystal.
Description
Technical Field
The utility model relates to a monocrystalline silicon production technical field especially relates to a measure structure of pulling a crystal stove molten silicon liquid level and including the pulling a crystal stove of this structure.
Background
The Czochralski method is mainly used for producing monocrystalline silicon at present, and is characterized in that graphite resistance is used for heating, polycrystalline silicon in a high-purity quartz crucible is melted, then seed crystals are inserted into the surface of a melt for fusion, the seed crystals are rotated at the same time, then the crucible is reversed, the seed crystals are lifted upwards slowly, and a monocrystalline silicon crystal rod is formed through the processes of seeding, amplifying, shoulder rotating, equal-diameter growth, ending and the like. With the continuous improvement of the quality requirement of the raw material of the monocrystalline silicon, the requirement of the crystal defects in the crystal bar is stricter and stricter. The formation and distribution of defects in the crystal are influenced by the temperature gradient of crystal growth, and the distance from the liquid level of the molten silicon to the bottom of the guide shell, namely Me lt Gap, can obviously influence the temperature gradient of the crystal growth. Therefore, in order to ensure the quality of crystals, the Me lt Gap is measured after the polycrystalline silicon melt is finished, so that the distance from the liquid level of the molten silicon to the bottom of the guide cylinder is in a preset range. In the subsequent crystal bar pulling process, along with the growth of crystals, the molten liquid in the crucible is continuously reduced, the liquid level of the molten silicon is continuously lowered, meanwhile, the crucible is continuously raised, and in order to ensure that the distance from the liquid level of the molten silicon to the bottom of the guide shell is within a preset range, the distance needs to be accurately monitored and adjusted in real time.
The existing method for measuring the distance from the liquid level of the molten silicon to the bottom of the draft tube is to insert a quartz lifting hook with a circular section at the lower part of the draft tube, and the measurement is carried out by the reflection imaging principle of the quartz lifting hook on the liquid level of the molten silicon. However, the measurement method has some disadvantages in the actual measurement process: if under the interference of high-temperature strong radiation, the reflection at the liquid level of the molten silicon is not clear; such as fluctuation of the liquid level, etc., which may affect the shape of the reflection; these affect the accuracy of the measurement to a large extent.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a measure structure of crystal pulling furnace molten silicon liquid level height can improve the accuracy to the distance measurement from molten silicon liquid level to draft tube bottom.
In order to realize the aim, the utility model provides a structure for measuring the height of the molten silicon liquid level of a crystal pulling furnace, which comprises an auxiliary plate fixed at the lower part of a guide cylinder, a linear light source and a camera device which are arranged on the crystal pulling furnace, wherein the inner side surface of the auxiliary plate close to the center of the guide cylinder is a plane, the inner side surface of the auxiliary plate is vertical to the liquid level of the molten silicon, the lower edge of the inner side surface of the auxiliary plate is a horizontal line segment, one part of linear light emitted by the linear light source can irradiate on the inner side surface of the auxiliary plate, the other part of the linear light can irradiate on the molten silicon liquid level, an included angle theta is formed between the linear light irradiating on the inner side surface of the auxiliary plate and the lower edge of the inner side surface, the included angle theta is larger than 0 degree and smaller than 90 degrees, the linear light irradiating on the molten silicon liquid level can be reflected to the inner side surface of the auxiliary plate, and the camera device can shoot light rays on the inner side surface of the auxiliary plate.
Preferably, the auxiliary plate is a planar thin plate.
Preferably, the auxiliary plate is made of quartz or graphite sheets.
Preferably, a transverse plate is fixed at the upper end of the auxiliary plate, the transverse plate is perpendicular to the auxiliary plate, and the auxiliary plate is fixed on the guide cylinder through the transverse plate.
Preferably, the included angle θ is greater than 30 degrees and less than 60 degrees.
Preferably, the linear light source is a linear laser source.
Preferably, the linear light source is mounted on a furnace lid of the crystal pulling furnace.
The utility model is different from the prior art, the utility model provides a structure of measurement crystal pulling furnace molten silicon liquid level height is through the below fixed mounting accessory plate at the draft tube to make the accessory plate be close the medial surface at draft tube center for the plane, this medial surface perpendicular to molten silicon liquid level, when linear light (being the light of straightway shape promptly) that linear light source sent shines on the medial surface and the molten silicon liquid level of accessory plate, shine on the medial surface of the accessory plate can be reflected to the partial linear light on the molten silicon liquid level. I.e. corresponding to the formation of an incident light beam and a reflected light beam on the inner side of the auxiliary plate. Since the position of the linear light source is fixed, the angle θ (angle of incidence) between the linear light irradiated on the inner side surface of the auxiliary plate and the lower edge of the inner side surface is also fixed and known. The positions of the incident beam and the reflected beam are recorded by the camera device, and the distance between the plane structure sheet and the liquid level can be calculated by combining the incident angle. When the height of the guide shell or the height of the molten silicon liquid level changes, the change value of the distance from the molten silicon liquid level to the bottom of the guide shell can be accurately obtained by calculating the distance between the plane structure sheet and the molten silicon liquid level. Therefore, the utility model provides a structure for measuring the molten silicon liquid level of crystal pulling furnace can improve the accuracy of distance measurement from the molten silicon liquid level to the bottom of the draft tube.
Another object of the utility model is to provide a crystal pulling furnace, can accurately measure the molten silicon liquid level to draft tube bottom distance, guarantee that this distance is in predetermineeing the scope to can guarantee the quality of the crystal of production.
In order to achieve the above purpose, the technical solution of the present invention is realized as follows:
a crystal pulling furnace comprises a furnace chamber, a furnace cover, a crucible and a guide cylinder, wherein an auxiliary plate is fixedly arranged at the lower part of the guide cylinder, a linear light source and a camera device are arranged on the furnace cover, the inner side surface of the auxiliary plate close to the center of the guide cylinder is a plane, the inner side surface of the auxiliary plate is vertical to the liquid level of the molten silicon, the lower edge of the inner side surface of the auxiliary plate is a horizontal line segment, one part of linear light emitted by the linear light source can irradiate on the inner side surface of the auxiliary plate, the other part of the linear light can irradiate on the molten silicon liquid level, an included angle theta is formed between the linear light irradiating on the inner side surface of the auxiliary plate and the lower edge of the inner side surface, the included angle theta is larger than 0 degree and smaller than 90 degrees, the linear light irradiating on the molten silicon liquid level can be reflected to the inner side surface of the auxiliary plate, and the camera device can shoot light rays on the inner side surface of the auxiliary plate.
Preferably, the included angle θ is greater than 30 degrees and less than 60 degrees.
The crystal pulling furnace and the structure for measuring the molten silicon liquid level height of the crystal pulling furnace have the same technical advantages over the prior art, and are not described in detail herein.
Drawings
FIG. 1 is a schematic view of a structure for measuring the level of molten silicon in a crystal pulling furnace according to one embodiment of the present invention;
FIG. 2 is a schematic view of an optical path formed between an inner side surface of the auxiliary plate and a surface of the molten silicon in the structure shown in FIG. 1;
FIG. 3 is a schematic diagram of the measurement of the distance from the molten silicon level to the guide shell bottom auxiliary plate after the polysilicon melt in the crystal pulling furnace is finished;
FIG. 4 is a schematic diagram showing the measurement of the distance change between the surface of the molten silicon and the bottom auxiliary plate of the guide shell after the position of the molten silicon surface is changed;
FIG. 5 is a schematic view showing how the distance from the surface of the molten silicon to the bottom auxiliary plate of the guide shell changes after the position of the guide shell changes;
in the drawings, the components represented by the respective reference numerals are listed below:
1-an auxiliary plate; 2-a linear light source; 3-a guide shell; 4-a crucible; 5-molten silicon liquid level; 6-a transverse plate; 7-a crystal bar; 8-incident beam; 9-liquid level beam; 10-reflected light beam.
Detailed Description
The principles and features of the present invention are described below in conjunction with the following drawings, the examples given are only intended to illustrate the present invention and are not intended to limit the scope of the present invention.
Referring to fig. 1 as appropriate, the present invention provides a structure for measuring a molten silicon level in a crystal pulling furnace according to a basic embodiment, which includes an auxiliary plate 1 fixed to a lower portion of a draft tube 3, a linear light source 2 installed in the crystal pulling furnace, and an image pickup device.
The inner side surface of the auxiliary plate 1 close to the center of the guide shell 3 is a plane, the inner side surface of the auxiliary plate 1 is vertical to the molten silicon liquid level 5, and the lower edge of the inner side surface of the auxiliary plate 1 is a horizontal line segment. The inner side surface of the auxiliary plate 1 refers to the surface of the auxiliary plate 1 close to the center of the guide shell 3 or facing the crystal bar 7. The inner side of the auxiliary plate 1 is perpendicular to the surface 5 of the molten silicon, i.e. the inner side of the auxiliary plate 1 is arranged vertically, while the surface of the molten silicon in the crucible 4 is horizontal, so that the inner side of the auxiliary plate 1 is perpendicular to the surface 5 of the molten silicon. The lower edge of the inner side of the auxiliary plate 1 is a horizontal line segment, that is, as shown in fig. 3, the lower edge of the inner side of the auxiliary plate 1 is horizontally arranged and is parallel to the molten silicon liquid surface 5.
The auxiliary plate 1 can be made of various plate materials, and preferably, the auxiliary plate 1 is a plane thin plate. The material of which the auxiliary plate 1 is made can be chosen from a wide range of materials that can be applied to crystal pulling furnaces, said auxiliary plate 1 preferably being made of quartz or graphite sheets.
The linear light source 2 may employ various light sources capable of emitting linear light. The linear light refers to a light beam in the shape of a straight line segment. The linear light source 2 is preferably a linear laser source. The linear light source 2 may be installed at any suitable position of the crystal pulling furnace as long as a part of the linear light emitted from the linear light source 2 can irradiate on the inner side surface of the auxiliary plate 1, another part can irradiate on the molten silicon liquid level 5, an included angle between the linear light irradiated on the inner side surface of the auxiliary plate 1 and the lower edge of the inner side surface is theta, the included angle theta is larger than 0 degree and smaller than 90 degrees, and the linear light irradiated on the molten silicon liquid level 5 can be reflected on the inner side surface of the auxiliary plate 1. The linear light source 2 is preferably mounted on the furnace lid of the crystal pulling furnace. The included angle theta is preferably greater than 30 degrees and less than 60 degrees.
The camera device can shoot light rays on the inner side surface of the auxiliary plate 1. The imaging device is used for shooting the incident light beam 8 and the reflected light beam 10 on the inner side surface of the auxiliary plate 1, so that the imaging device can be arranged at various proper positions capable of shooting the inner side surface of the auxiliary plate 1, and preferably, the imaging device is also arranged on a furnace cover of the crystal pulling furnace. The image pickup device may employ a camera or a video camera, and preferably, the image pickup device employs a CCD camera.
In the structure for measuring the height of the molten silicon liquid level in the crystal pulling furnace provided by the embodiment, when the structure is used, as shown in fig. 2, linear light emitted by the linear light source 2 irradiates on the inner side surface of the auxiliary plate 1 and the molten silicon liquid level 5, a part of the linear light irradiating on the inner side surface of the auxiliary plate 1 forms an incident light beam 8 on the inner side surface of the auxiliary plate 1, and another part of the linear light irradiating on the molten silicon liquid level 5 forms a liquid level light beam 9 on the molten silicon liquid level 5, and because the molten silicon liquid level 5 has good reflectivity, the liquid level light beam 9 is reflected by the molten silicon liquid level 5 and irradiates on the inner side surface of the auxiliary plate 1 to form a reflected light beam 10. I.e. the linear light source 2 corresponds to the formation of an incident light beam 8 and a reflected light beam 10 on the inner side of the auxiliary plate 1.
As shown in fig. 3, when the incident beam 8 intersects the lower edge of the inner side of the auxiliary plate 1 at a point a1, the reflected beam 10 intersects the lower edge of the inner side of the auxiliary plate 1 at a point B1, the incident angle between the incident beam 8 and the lower edge of the inner side of the auxiliary plate 1 is an included angle θ, and the distance between the point a1 and the point B1 is S1, the liquid level height H between the lower edge of the auxiliary plate 1 and the liquid level 5 of the molten silicon is:
H＝1/2tanθ×Sl
the included angle theta is fixed, the distance S1 can be obtained after photographing through a camera device, so that the liquid level height H between the lower edge of the auxiliary plate 1 and the molten silicon liquid level 5 can be obtained, and meanwhile, the auxiliary plate 1 is fixedly arranged on the guide shell, so that the distance from the molten silicon liquid level to the bottom of the guide shell can be accurately obtained.
According to the above, the utility model provides a structure of measurement crystal pulling furnace molten silicon liquid level can effectively avoid influencing the shape of reflection such as the reflection of molten silicon liquid level is not clear or the fluctuation of liquid level under the high temperature strong radiation interference, has improved the accuracy to molten silicon liquid level to draft tube bottom distance measurement.
Meanwhile, when the height of the molten silicon level is changed, as shown in FIG. 4,
wherein a solid line segment below the auxiliary plate 1 represents the molten silicon level before the change, and a dotted line segment represents the molten silicon level after the change. Before the liquid level of the molten silicon changes, an incident beam 8 intersects with the lower edge of the inner side surface of the auxiliary plate 1 at a point A1, a reflected beam 10 intersects with the lower edge of the inner side surface of the auxiliary plate 1 at a point B1, and the incident angle of the incident beam 8 and the lower edge of the inner side surface of the auxiliary plate 1 is an included angle theta; after the liquid level of the molten silicon changes, the reflected light beam intersects with the lower edge of the inner side surface of the auxiliary plate 1 at a point C1, and then the change value H3 of the distance (Gap) from the liquid level of the molten silicon to the bottom of the guide cylinder is as follows:
H3＝Hl-H2＝1/2tanθ×(S2-S3)
wherein S2 is the distance between point a1 and point C1; s3 is the distance between point a1 and point B1.
When the height of the guide shell is changed, as shown in figure 5,
wherein the solid line shows the auxiliary plate 1 to indicate the position before the height of the guide shell is changed, and the dotted line shows the position after the height of the guide shell is changed. Before the height of the guide cylinder is changed, the incident light beam 8 intersects with the lower edge of the inner side surface of the auxiliary plate 1 at a point A1, the reflected light beam 10 intersects with the lower edge of the inner side surface of the auxiliary plate 1 at a point B1, and the incident angle of the incident light beam 8 and the lower edge of the inner side surface of the auxiliary plate 1 is an included angle theta; after the height of the guide shell is changed, the incident beam 8 intersects with the lower edge of the inner side surface of the auxiliary plate 1 at a point A2, the reflected beam 10 intersects with the lower edge of the inner side surface of the auxiliary plate 1 at a point B2, and then the change value H3 of the distance (Gap) from the liquid level of the molten silicon to the bottom of the guide shell is as follows:
H3＝Hl-H2＝1/2tanθ×(S2-S3)
wherein S2 is the distance between point a1 and point B1; s3 is the distance between point a2 and point B2.
In the present invention, the auxiliary plate 1 may be fixed to the guide cylinder 3 in various ways. Preferably, as shown in fig. 1, a transverse plate 6 is fixed to an upper end of the auxiliary plate 1, the transverse plate 6 is perpendicular to the auxiliary plate 1, and the auxiliary plate 1 is fixed to the guide cylinder 3 through the transverse plate 6. The transverse plate 6 and the auxiliary plate 1 are preferably of one-piece construction.
Based on the technical concept, the utility model also provides a crystal pulling furnace, including furnace chamber, bell, crucible 4 and draft tube 3. The crucible 4 is arranged in the furnace chamber. An auxiliary plate 1 is fixedly arranged at the lower part of the guide cylinder 3, and a linear light source 2 and an image pickup device are arranged on the furnace cover. The auxiliary plate 1 is preferably a flat rectangular thin plate made of a graphite sheet or a quartz sheet. The inner side surface of the auxiliary plate 1 close to the center of the guide shell 3 is a plane, the auxiliary plate 1 is vertically arranged, the inner side surface of the auxiliary plate 1 is perpendicular to the molten silicon liquid level 5, and the lower edge of the inner side surface of the auxiliary plate 1 is a horizontal line segment. The linear light source 2 is preferably a linear laser source, the linear light source 2 is mounted on the furnace cover, so that a part of linear light emitted by the linear light source 2 can irradiate on the inner side surface of the auxiliary plate 1, the other part of linear light can irradiate on the molten silicon liquid level 5, an included angle theta between the linear light irradiated on the inner side surface of the auxiliary plate 1 and the lower edge of the inner side surface is larger than 0 degree and smaller than 90 degrees, and the linear light irradiated on the molten silicon liquid level 5 can be reflected on the inner side surface of the auxiliary plate 1. The included angle theta is preferably greater than 30 degrees and less than 60 degrees, for example, the included angle theta is 45 degrees. The camera device can shoot light rays on the inner side surface of the auxiliary plate 1.
The distance from the molten silicon surface 5 of the crystal pulling furnace to the bottom of the guide shell 3 provided by the above embodiment can be obtained by combining the incident light beam 8 and the reflected light beam 10 formed on the inner surface of the auxiliary plate 1 when the linear light emitted from the linear light source 2 is irradiated on the inner surface of the auxiliary plate 1 and the molten silicon surface 5, and the included angle theta between the linear light irradiated on the inner surface of the auxiliary plate 1 and the lower edge of the inner surface. When the distance from the molten silicon liquid level 5 to the bottom of the guide cylinder 3 is detected to be close to the threshold value of the preset range, the distance from the molten silicon liquid level 5 to the bottom of the guide cylinder 3 can be always in the preset range by changing the crystal pulling speed and the rising speed of the crucible 4, and therefore the quality of the produced crystal bar is guaranteed.
In the description of the present invention, it should be understood that the terms "inside" and "outside" are used for indicating the orientation or the positional relationship based on the orientation or the positional relationship shown in the drawings, and are only for convenience of description and simplification of the description, but not for indicating or implying that the indicated device must have a specific orientation, be constructed and operated in a specific orientation, and should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts or intervening parts. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
Although embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.
Claims (9)
1. A structure for measuring the height of a molten silicon liquid level of a crystal pulling furnace is characterized by comprising an auxiliary plate (1) fixed at the lower part of a guide cylinder (3), a linear light source (2) and a camera device, wherein the inner side surface of the auxiliary plate (1) close to the center of the guide cylinder (3) is a plane, the inner side surface of the auxiliary plate (1) is perpendicular to the molten silicon liquid level (5), the lower edge of the inner side surface of the auxiliary plate (1) is a horizontal line segment, one part of linear light emitted by the linear light source (2) can irradiate on the inner side surface of the auxiliary plate (1), the other part of linear light can irradiate on the molten silicon liquid level (5), the included angle theta between the linear light irradiating on the inner side surface of the auxiliary plate (1) and the lower edge of the inner side surface is theta, the theta is more than 0 degree and less than 90 degrees, the linear light irradiating on the molten silicon liquid level (5) can reflect on the inner side surface of the auxiliary plate (1), the camera device can shoot light rays on the inner side surface of the auxiliary plate (1).
2. Structure for measuring the level of molten silicon in a crystal pulling furnace as claimed in claim 1, characterized in that the auxiliary plate (1) is a flat sheet.
3. Structure for measuring the level of molten silicon in a crystal pulling furnace as claimed in claim 2, characterized in that the auxiliary plate (1) is made of quartz or graphite sheets.
4. The structure for measuring the molten silicon level in a crystal pulling furnace as claimed in claim 1, wherein a transverse plate (6) is fixed to the upper end of the auxiliary plate (1), the transverse plate (6) is perpendicular to the auxiliary plate (1), and the auxiliary plate (1) is fixed to the guide cylinder (3) through the transverse plate (6).
5. The structure for measuring the level of molten silicon in a crystal pulling furnace as set forth in any one of claims 1 to 4 wherein the included angle θ is greater than 30 degrees and less than 60 degrees.
6. Structure for measuring the level of molten silicon in a crystal pulling furnace as claimed in claim 1, characterized in that the linear light source (2) is a linear laser source.
7. Structure for measuring the level of molten silicon in a crystal pulling furnace as set forth in claim 6, characterized in that the linear light source (2) is mounted on the furnace lid of the crystal pulling furnace.
8. A crystal pulling furnace comprises a furnace chamber, a furnace cover, a crucible (4) and a guide cylinder (3), and is characterized in that an auxiliary plate (1) is fixedly arranged at the lower part of the guide cylinder (3), a linear light source (2) and an image pickup device are arranged on the furnace cover, the inner side surface of the auxiliary plate (1) close to the center of the guide cylinder (3) is a plane, the inner side surface of the auxiliary plate (1) is vertical to a molten silicon liquid level (5), the lower edge of the inner side surface of the auxiliary plate (1) is a horizontal line segment, one part of linear light emitted by the linear light source (2) can be irradiated on the inner side surface of the auxiliary plate (1), the other part of linear light can be irradiated on the molten silicon liquid level (5), the included angle theta between the linear light irradiated on the inner side surface of the auxiliary plate (1) and the lower edge of the inner side surface is larger than 0 degree and smaller than 90 degrees, the linear light irradiated on the molten silicon liquid level (5) can be reflected to the inner side surface of the auxiliary plate (1), and the image pickup device can shoot the light on the inner side surface of the auxiliary plate (1).
9. A crystal puller as set forth in claim 8 wherein the included angle θ is greater than 30 degrees and less than 60 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120884689.4U CN214992008U (en) | 2021-04-27 | 2021-04-27 | Structure for measuring molten silicon liquid level of crystal pulling furnace and crystal pulling furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120884689.4U CN214992008U (en) | 2021-04-27 | 2021-04-27 | Structure for measuring molten silicon liquid level of crystal pulling furnace and crystal pulling furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214992008U true CN214992008U (en) | 2021-12-03 |
Family
ID=79091944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120884689.4U Active CN214992008U (en) | 2021-04-27 | 2021-04-27 | Structure for measuring molten silicon liquid level of crystal pulling furnace and crystal pulling furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214992008U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023142507A1 (en) * | 2022-01-27 | 2023-08-03 | 中环领先半导体材料有限公司 | Single crystal growth device |
-
2021
- 2021-04-27 CN CN202120884689.4U patent/CN214992008U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023142507A1 (en) * | 2022-01-27 | 2023-08-03 | 中环领先半导体材料有限公司 | Single crystal growth device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9708731B2 (en) | Method of producing silicon single crystal | |
| US9260796B2 (en) | Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof | |
| TWI656247B (en) | Method of manufacturing single-crystalline silicon | |
| CN107923065B (en) | Method and apparatus for producing single crystal | |
| CN104005083B (en) | A kind of apparatus and method measuring single crystal growing furnace fusion silicon liquid level height | |
| US8414701B2 (en) | Method for manufacturing silicon single crystal in which a crystallization temperature gradient is controlled | |
| CN214992008U (en) | Structure for measuring molten silicon liquid level of crystal pulling furnace and crystal pulling furnace | |
| WO2021215057A1 (en) | Single crystal production apparatus and single crystal production method | |
| TWI651441B (en) | Single crystal manufacturing method | |
| CN112243493A (en) | Method and apparatus for measuring transmittance of quartz crucible | |
| TW201732097A (en) | Single crystal manufacturing method and device | |
| RU2200776C2 (en) | Crystal growing apparatus and method | |
| JP2019214486A (en) | Method of measuring interval between melt level and seed crystal, method of preheating seed crystal, and method of manufacturing single crystal | |
| TWI782726B (en) | Manufacturing method of single crystal | |
| TWI762268B (en) | Single crystal manufacturing apparatus and single crystal manufacturing method | |
| WO2022118537A1 (en) | Method for measuring distance between heat shield member lower end surface and raw material melt surface, method for controlling distance between heat shield member lower end surface and raw material melt surface, and method for producing silicon single crystal | |
| JP2003026495A (en) | Device and method for pulling single crystal | |
| JPS6042294A (en) | Device for measuring position of melt surface | |
| JP2008156203A (en) | Crystal growing device | |
| JPH10142063A (en) | Method for measuring temperature of surface of single crystal | |
| JP2016204190A (en) | Method for manufacturing aluminum oxide single crystal | |
| KR100977619B1 (en) | Measuring Apparatus and Method of Single Crystal Ingot Diameter | |
| KR20200102693A (en) | Ingot growth control apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220701 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710032 Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |