CN214851147U - Transistor amplifying circuit and transistor amplifying device - Google Patents
Transistor amplifying circuit and transistor amplifying device Download PDFInfo
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- CN214851147U CN214851147U CN202121278459.XU CN202121278459U CN214851147U CN 214851147 U CN214851147 U CN 214851147U CN 202121278459 U CN202121278459 U CN 202121278459U CN 214851147 U CN214851147 U CN 214851147U
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Abstract
The application provides a transistor amplification circuit and transistor amplification equipment, relates to electronic circuit technical field. In the application, the transistor amplification circuit comprises a signal input end, an in-phase proportion amplification unit, a power amplification unit and a signal output end. The signal input end is used for receiving a signal to be processed. The input end of the in-phase proportion amplification unit is electrically connected with the signal input end and is used for amplifying the signal to be processed and outputting a pre-amplification signal. The input end of the power amplification unit is electrically connected with the output end of the in-phase proportion amplification unit and is used for amplifying the pre-amplified signal and outputting a target amplified signal, wherein the power amplification unit comprises a transistor device. The signal output end is electrically connected with the output end of the power amplification unit and used for outputting a target amplification signal. Based on the circuit, the problem that cross-over distortion is easy to occur in the process of amplifying signals in the prior art can be solved.
Description
Technical Field
The application relates to the technical field of electronic circuits, in particular to a transistor amplifying circuit and transistor amplifying equipment.
Background
The amplification of an audio signal is an important part of audio signal processing technology, and therefore, the configuration of a corresponding amplification circuit determines the fidelity of the audio signal. However, the inventors have found that, in the prior art, a problem of crossover distortion is likely to occur in the process of amplifying a signal.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present invention is to provide a transistor amplifier circuit and a transistor amplifier apparatus, so as to solve the problem in the prior art that crossover distortion is likely to occur during signal amplification.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
a transistor amplification circuit, comprising:
the signal input end is used for receiving a signal to be processed;
the input end of the in-phase proportion amplification unit is electrically connected with the signal input end and is used for amplifying the signal to be processed and outputting a pre-amplified signal;
the input end of the power amplifying unit is electrically connected with the output end of the in-phase proportion amplifying unit and is used for amplifying the pre-amplified signal and outputting a target amplified signal, wherein the power amplifying unit comprises a transistor device;
and the signal output end is electrically connected with the output end of the power amplification unit and is used for outputting the target amplification signal.
In a preferred option of the embodiment of the present application, in the transistor amplifier circuit, the in-phase proportional amplifying unit includes:
the operational amplifier comprises a non-inverting input end, an inverting input end and an amplifying output end, wherein the non-inverting input end is used as the input end of the non-inverting proportional amplifying unit, and the amplifying output end is used as the output end of the non-inverting proportional amplifying unit;
the first end of the first voltage-dividing resistor is electrically connected with a regulated power supply;
a second voltage-dividing resistor, a first end of the second voltage-dividing resistor being electrically connected to a second end of the first voltage-dividing resistor and the non-inverting input terminal, respectively, and a second end of the second voltage-dividing resistor being grounded;
the first end of the first feedback resistor is electrically connected with the amplification output end;
and the first end of the second feedback resistor is electrically connected with the second end of the first feedback resistor and the inverting input end respectively, and the second end of the second feedback resistor is grounded.
In a preferable selection of the embodiment of the present application, in the transistor amplifying circuit, the in-phase proportional amplifying unit further includes:
a first protection resistor electrically connected between a first end of the second voltage-dividing resistor and the non-inverting input terminal;
and the first end of the second protection resistor is electrically connected with the amplification output end, and the second end of the second protection resistor is used as the output end of the in-phase proportion amplification unit.
In a preferable selection of the embodiment of the present application, in the transistor amplifying circuit, the in-phase proportional amplifying unit further includes:
a first end of the first capacitor is electrically connected with the non-inverting input end, and a second end of the first capacitor is used as an input end of the non-inverting proportional amplifying unit;
a second capacitor connected in parallel with the second voltage dividing resistor;
a third capacitor electrically connected between the second feedback resistor and ground.
In a preferred option of the embodiment of the present application, in the transistor amplifying circuit, the power amplifying unit is an emitter follower unit, and the emitter follower unit includes a triode.
In a preferred option of the embodiment of the present application, in the transistor amplifier circuit, the emitter follower unit includes:
the base electrode of the first triode is electrically connected with the output end of the in-phase proportion amplification unit, the collector electrode of the first triode is electrically connected with a voltage-stabilized power supply, and the emitting electrode of the first triode is used as the output end of the power amplification unit.
In a preferable selection of the embodiment of the present application, in the transistor amplifier circuit, the emitter follower unit further includes:
and a first end of the fourth capacitor is electrically connected with the emitter of the first triode, and a second end of the fourth capacitor is used as an output end of the power amplification unit.
In a preferred option of the embodiment of the present application, in the transistor amplifier circuit, the transistor amplifier circuit further includes:
the first end of the active load unit is electrically connected with a stabilized voltage power supply, and the second end of the active load unit is electrically connected with the output end of the power amplification unit.
In a preferred option of the embodiment of the present application, in the transistor amplifier circuit, the active load unit includes:
a collector of the second triode is electrically connected with the output end of the power amplification unit;
a first end of the third protection resistor is electrically connected with the voltage-stabilized power supply, and a second end of the third protection resistor is electrically connected with a base electrode of the second triode;
the cathode of the first diode is electrically connected with the base electrode of the second triode, and the anode of the first diode is grounded;
and a first end of the fourth protection resistor is electrically connected with an emitting electrode of the second triode, and a second end of the fourth protection resistor is grounded.
An embodiment of the present application further provides a transistor amplifying device, including:
the transistor amplifier circuit described above;
the voltage-stabilized power supply is electrically connected with the transistor amplifying circuit and used for supplying electric energy to the transistor amplifying circuit.
According to the transistor amplifying circuit and the transistor amplifying equipment, the power amplifying unit comprises the transistor device, and compared with the conventional technical scheme that two or more transistors are adopted, cross-over distortion cannot be generated due to alternate on-off, so that the problem that cross-over distortion easily occurs in the process of amplifying signals in the prior art is solved. And, compared with the conventional technical scheme that two or more transistors are adopted, the damping of the load by a single transistor is bidirectional, so that the improvement of the circuit damping coefficient can be realized.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a block diagram of a transistor amplifier device according to an embodiment of the present disclosure.
Fig. 2 is a circuit block diagram of a transistor amplifier circuit provided in an embodiment of the present application.
Fig. 3 is a schematic circuit diagram of a transistor amplifier circuit according to an embodiment of the present application.
Icon: 10-a transistor amplification device; 100-transistor amplifier circuit; 110-a signal input; 120-in-phase proportional amplification unit; ICA — operational amplifier; r11 — first divider resistance; r12-second voltage dividing resistor; r21 — first feedback resistance; r22 — second feedback resistance; r31 — first protection resistance; r32 — second protection resistance; c1 — first capacitance; c2 — second capacitance; c3 — third capacitance; 130-power amplification unit: q1-first triode; c4-fourth capacitance; 140-a signal output; 150-an active load unit; q2-second transistor; r33 — third protection resistance; d1 — first diode; r34-fourth protection resistor; 200-voltage-stabilized power supply.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1, the present embodiment provides a transistor amplifying device 10. The transistor amplifying device 10 may include a transistor amplifying circuit 100 and a regulated power supply 200.
In detail, the transistor amplifying device 10 may be electrically connected to the regulated power supply 200, and configured to amplify and output a signal to be processed based on the power supplied by the regulated power supply 200.
It is understood that, in an alternative example, the regulated power supply 200 may include a power supply device, a rectifying device, a filtering device, and the like, and is not particularly limited herein.
With reference to fig. 2, the embodiment of the present application further provides a transistor amplifying circuit 100, which can be applied to the transistor amplifying apparatus 10. The transistor amplification circuit 100 may include a signal input terminal 110, an in-phase proportional amplification unit 120, a power amplification unit 130, and a signal output terminal 140.
In detail, the signal input 110 may be used for receiving a signal to be processed. The input end of the in-phase proportional amplifying unit 120 is electrically connected to the signal input end 110, and is configured to amplify the signal to be processed and output a pre-amplified signal. The input end of the power amplifying unit 130 is electrically connected to the output end of the in-phase proportional amplifying unit 120, and is configured to amplify the pre-amplified signal and output a target amplified signal, where the power amplifying unit 130 includes a transistor device. The signal output end 140 is electrically connected to the output end of the power amplifying unit 130, and is configured to output the target amplified signal.
Based on the above circuit design, since the power amplification unit 130 includes one transistor device, compared with the conventional technical scheme that two or more transistors are adopted, the cross-over distortion is not generated due to alternate on/off, so that the problem that the cross-over distortion is easily generated in the process of amplifying a signal in the prior art is solved. And, compared with the conventional technical scheme that two or more transistors are adopted, the damping of the load by a single transistor is bidirectional, so that the improvement of the circuit damping coefficient can be realized.
It is understood that, in an alternative example, in conjunction with fig. 3, the in-phase proportional amplifying unit 120 may include an operational amplifier ICA, a first voltage-dividing resistor R11, a second voltage-dividing resistor, a first feedback resistor R21, and a second feedback resistor R22.
In detail, the operational amplifier ICA includes a non-inverting input terminal as an input terminal of the non-inverting proportional amplifying unit 120, an inverting input terminal, and an amplifying output terminal as an output terminal of the non-inverting proportional amplifying unit 120. A first terminal of the first voltage dividing resistor R11 is electrically connected to the regulated power supply 200. A first end of the second voltage-dividing resistor is electrically connected to a second end of the first voltage-dividing resistor R11 and the non-inverting input terminal, respectively, and a second end of the second voltage-dividing resistor is grounded. A first end of the first feedback resistor R21 is electrically connected to the amplification output terminal. The first end of the second feedback resistor R22 is electrically connected to the second end of the first feedback resistor R21 and the inverting input terminal, respectively, and the second end of the second feedback resistor R22 is grounded.
Based on this, the first voltage dividing resistor R11 and the second voltage dividing resistor cooperate to provide a reference voltage to the operational amplifier ICA, which may be, for example, half of the voltage value of the regulated power supply 200. The first feedback resistor R21 and the second feedback resistor R22 cooperate to control the gain of the in-phase proportional amplifying unit 120 when amplifying a signal.
It is understood that, on the basis of the above example, in an alternative example, the in-phase proportional amplifying unit 120 further includes a first protection resistor R31 and the second protection resistor 32.
In detail, the first protection resistor R31 is electrically connected between the first end of the second voltage-dividing resistor and the non-inverting input terminal. A first end of the second protection resistor 32 is electrically connected to the amplifying output end, and a second end of the second protection resistor 32 is used as the output end of the in-phase proportional amplifying unit 120 and is electrically connected to the input end of the power amplifying unit 130.
It is understood that, on the basis of the above example, in an alternative example, the in-phase proportional amplifying unit 120 further includes a first capacitor C1, a second capacitor C2, and a third capacitor C3.
In detail, a first end of the first capacitor C1 is electrically connected to the non-inverting input terminal, and a second end of the first capacitor C1 serves as an input terminal of the non-inverting proportional amplifying unit 120. The second capacitor C2 is connected in parallel with the second voltage dividing resistor. The third capacitor C3 is electrically connected between the second feedback resistor R22 and ground.
It is understood that, in an alternative example, the power amplifying unit 130 may be an emitter follower unit including a transistor to form an emitter follower, so as to amplify a current signal (e.g., the pre-amplification signal) output by the in-phase proportional amplifying unit 120 (e.g., the operational amplifier ICA).
It will be appreciated that in an alternative example, the emitter follower unit may comprise a first transistor Q1.
In detail, the base of the first transistor Q1 is electrically connected to the output terminal of the in-phase proportional amplifying unit 120, the collector of the first transistor Q1 is electrically connected to a regulated power supply 200, and the emitter of the first transistor Q1 serves as the output terminal of the power amplifying unit 130. Based on this, emitter-following amplification of the signal can be achieved.
It will be appreciated that in the above example, in an alternative example, the emitter follower unit may further comprise a fourth capacitor C4.
In detail, a first terminal of the fourth capacitor C4 is electrically connected to the emitter of the first transistor Q1, and a second terminal of the fourth capacitor C4 serves as an output terminal of the power amplifying unit 130. Based on this, the amplified signal can be coupled out.
It is understood that, on the basis of the above example, in an alternative example, the transistor amplification circuit 100 may further include an active load unit 150.
In detail, a first terminal of the active load unit 150 is electrically connected to the regulated power supply 200, and a second terminal of the active load unit 150 is electrically connected to the output terminal of the power amplifying unit 130.
Based on this, the active load unit 150 is adopted to replace the high-resistance resistor in the conventional technical scheme, so that the amplification capability of the circuit can be effectively improved.
It is understood that, in an alternative example, the active load unit 150 includes a second transistor Q2, a third protection resistor R33, a first diode D1, and a fourth protection resistor R34.
In detail, the collector of the second transistor Q2 is electrically connected to the output terminal of the power amplifying unit 130. A first end of the third protection resistor R33 is electrically connected to the regulated power supply 200, and a second end of the third protection resistor R33 is electrically connected to a base of the second transistor Q2. The cathode of the first diode D1 is electrically connected with the base of the second triode Q2, and the anode of the first diode D1 is grounded. A first end of the fourth protection resistor R34 is electrically connected to the emitter of the second transistor Q2, and a second end of the fourth protection resistor R34 is grounded.
The second transistor Q2, the third protection resistor R33, the first diode D1, and the fourth protection resistor R34 may form a constant current source to replace a high-resistance resistor in a conventional technical solution, so as to improve the signal amplification effect of the power amplification unit 130.
In summary, according to the transistor amplifier circuit 100 and the transistor amplifier device 10 provided by the present application, since the power amplifier unit 130 includes one transistor device, compared with the conventional technical scheme that two or more transistors are adopted, the crossover distortion is not generated due to alternate on/off, so that the problem of crossover distortion easily occurring in the prior art is solved. And, compared with the conventional technical scheme that two or more transistors are adopted, the damping of the load by a single transistor is bidirectional, so that the improvement of the circuit damping coefficient can be realized.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A transistor amplification circuit, comprising:
the signal input end is used for receiving a signal to be processed;
the input end of the in-phase proportion amplification unit is electrically connected with the signal input end and is used for amplifying the signal to be processed and outputting a pre-amplified signal;
the input end of the power amplifying unit is electrically connected with the output end of the in-phase proportion amplifying unit and is used for amplifying the pre-amplified signal and outputting a target amplified signal, wherein the power amplifying unit comprises a transistor device;
and the signal output end is electrically connected with the output end of the power amplification unit and is used for outputting the target amplification signal.
2. The transistor amplification circuit according to claim 1, wherein the in-phase proportional amplification unit comprises:
the operational amplifier comprises a non-inverting input end, an inverting input end and an amplifying output end, wherein the non-inverting input end is used as the input end of the non-inverting proportional amplifying unit, and the amplifying output end is used as the output end of the non-inverting proportional amplifying unit;
the first end of the first voltage-dividing resistor is electrically connected with a regulated power supply;
a second voltage-dividing resistor, a first end of the second voltage-dividing resistor being electrically connected to a second end of the first voltage-dividing resistor and the non-inverting input terminal, respectively, and a second end of the second voltage-dividing resistor being grounded;
the first end of the first feedback resistor is electrically connected with the amplification output end;
and the first end of the second feedback resistor is electrically connected with the second end of the first feedback resistor and the inverting input end respectively, and the second end of the second feedback resistor is grounded.
3. The transistor amplification circuit according to claim 2, wherein the in-phase proportional amplification unit further comprises:
a first protection resistor electrically connected between a first end of the second voltage-dividing resistor and the non-inverting input terminal;
and the first end of the second protection resistor is electrically connected with the amplification output end, and the second end of the second protection resistor is used as the output end of the in-phase proportion amplification unit.
4. The transistor amplification circuit according to claim 2, wherein the in-phase proportional amplification unit further comprises:
a first end of the first capacitor is electrically connected with the non-inverting input end, and a second end of the first capacitor is used as an input end of the non-inverting proportional amplifying unit;
a second capacitor connected in parallel with the second voltage dividing resistor;
a third capacitor electrically connected between the second feedback resistor and ground.
5. The transistor amplification circuit of claim 1, wherein the power amplification unit is an emitter follower unit, the emitter follower unit comprising a triode.
6. The transistor amplification circuit according to claim 5, wherein the emitter follower unit comprises:
the base electrode of the first triode is electrically connected with the output end of the in-phase proportion amplification unit, the collector electrode of the first triode is electrically connected with a voltage-stabilized power supply, and the emitting electrode of the first triode is used as the output end of the power amplification unit.
7. The transistor amplification circuit according to claim 6, wherein the emitter follower unit further comprises:
and a first end of the fourth capacitor is electrically connected with the emitter of the first triode, and a second end of the fourth capacitor is used as an output end of the power amplification unit.
8. The transistor amplification circuit according to any one of claims 1 to 7, further comprising:
the first end of the active load unit is electrically connected with a stabilized voltage power supply, and the second end of the active load unit is electrically connected with the output end of the power amplification unit.
9. The transistor amplification circuit of claim 8, wherein the active load unit comprises:
a collector of the second triode is electrically connected with the output end of the power amplification unit;
a first end of the third protection resistor is electrically connected with the voltage-stabilized power supply, and a second end of the third protection resistor is electrically connected with a base electrode of the second triode;
the cathode of the first diode is electrically connected with the base electrode of the second triode, and the anode of the first diode is grounded;
and a first end of the fourth protection resistor is electrically connected with an emitting electrode of the second triode, and a second end of the fourth protection resistor is grounded.
10. A transistor amplification device, comprising:
a transistor amplification circuit as claimed in any one of claims 1 to 9;
the voltage-stabilized power supply is electrically connected with the transistor amplifying circuit and used for supplying electric energy to the transistor amplifying circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121278459.XU CN214851147U (en) | 2021-06-08 | 2021-06-08 | Transistor amplifying circuit and transistor amplifying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121278459.XU CN214851147U (en) | 2021-06-08 | 2021-06-08 | Transistor amplifying circuit and transistor amplifying device |
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| Publication Number | Publication Date |
|---|---|
| CN214851147U true CN214851147U (en) | 2021-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121278459.XU Active CN214851147U (en) | 2021-06-08 | 2021-06-08 | Transistor amplifying circuit and transistor amplifying device |
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| CN (1) | CN214851147U (en) |
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2021
- 2021-06-08 CN CN202121278459.XU patent/CN214851147U/en active Active
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