CN214845799U - Radioactive fission gas detection device - Google Patents
Radioactive fission gas detection device Download PDFInfo
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- CN214845799U CN214845799U CN202121193219.XU CN202121193219U CN214845799U CN 214845799 U CN214845799 U CN 214845799U CN 202121193219 U CN202121193219 U CN 202121193219U CN 214845799 U CN214845799 U CN 214845799U
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Abstract
The utility model discloses a radioactive fission gas detection device, including lead shielding shell and all set up the sample air chamber in lead shielding shell and survey processing mechanism, survey processing mechanism including set up in the installation shell and to the anti-detector and the signal processing circuit board that accord with of semiconductor that lays in proper order of the direction of keeping away from the sample air chamber, be provided with the sealed window of titanium membrane between installation shell and the sample air chamber. The utility model discloses a set up two semiconductor detector, beta ray and gamma ray that produce after the inert gas decay in the semiconductor main detector detection sampling gas chamber because beta ray penetrability is not strong, the anti-detector that accords with of semiconductor can only detect gamma ray, can realize through subsequent data processing that the anti-of gamma background in the semiconductor main detector detection data accords with the deduction, and it is more accurate to make the data that the semiconductor main detector detected beta ray, and the result of use is better.
Description
Technical Field
The utility model belongs to the technical field of the gaseous detection of radioactive fission, concretely relates to gaseous detection device of radioactive fission.
Background
In the nuclear power station and the reverse running process, inert gas fission products are generated, mainly comprising 85Kr, 133Xe, isotopes thereof and the like, and when decaying, beta rays are mainly emitted. Once a nuclear power plant primary circuit pressure boundary is damaged and leaked, the inert gas species can be rapidly diffused into the air in the form of gas. Therefore, the damage and leakage condition of the pressure boundary of the primary circuit can be judged by monitoring the inert gas.
Meanwhile, when the barrier of the nuclear power plant is damaged and leaked, the inert gas monitoring has the advantages of fast response and high accuracy of a measuring result, and meanwhile accident potential hazards can be found as early as possible and early warning information is sent out, so that radiation protection personnel of the nuclear power plant can take prevention measures in time.
The traditional inert gas measurement method comprises a gamma energy spectrum method and a plastic scintillator total beta method, wherein the gamma energy spectrum method is used for measuring gamma ray energy spectrums emitted by various nuclides in a sampled gas so as to realize indirect measurement of the concentration of the inert gas in the air, and the main gamma ray branching ratio emitted by 85Kr of the inert gas is only 0.438%, so that the defects of high detection lower limit and incapability of on-line measurement are overcome.
The total beta method of the plastic scintillator measures beta rays emitted by decay of inert gas, and then performs back-stepping calculation to obtain the total activity concentration, but because the plastic scintillator is sensitive to gamma rays, the influence of the gamma rays on the measurement result needs to be removed in a proper mode.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that not enough among the prior art is directed against, a radioactive fission gas detection device is provided, a structure is simple, through setting up two semiconductor detectors, beta ray and gamma ray that produce after the inert gas decay in the semiconductor main detector detection sample gas chamber, because beta ray penetrability is not strong, the anti-detector that accords with of semiconductor can only detect gamma ray, can realize the anti-deduction that accords with of the gamma background in the semiconductor main detector detection data through subsequent data processing, it is more accurate to make the data that the semiconductor main detector detected beta ray, excellent in use effect.
In order to solve the technical problem, the utility model discloses a technical scheme is: a radioactive fission gas detection apparatus, characterized by: the device comprises a lead shielding shell, a sampling air chamber and an installation shell, wherein the sampling air chamber is arranged in the lead shielding shell, the installation shell is arranged on one side of the sampling air chamber, a detection processing mechanism is arranged in the installation shell, the detection processing mechanism comprises a semiconductor main detector, a semiconductor anti-coincidence detector and a signal processing circuit board, the semiconductor main detector, the semiconductor anti-coincidence detector and the signal processing circuit board are arranged in the installation shell in sequence in the direction far away from the sampling air chamber, a titanium film sealing window used for isolating the sampling air chamber from the detection processing mechanism is arranged between the installation shell and the sampling air chamber, the detection ends of the semiconductor main detector and the semiconductor anti-coincidence detector are arranged towards the sampling air chamber, and a first pre-amplification circuit connected with the semiconductor main detector and a second pre-amplification circuit connected with the semiconductor anti-coincidence detector are integrated on the signal processing circuit board;
the first preamplifier circuit comprises an operational amplifier U1 and an operational amplifier U2, the inverting input end of the operational amplifier U1 is divided into two paths, one path is connected with a +12V power supply through a resistor R3, the other path is grounded through a resistor R12 and a capacitor C11 which are connected in parallel, the non-inverting input end of the operational amplifier U1 is connected with the grid electrode of a junction field effect transistor Q1, the drain electrode of the junction field effect transistor Q1 is connected with the +12V power supply, the source electrode of the junction field effect transistor Q1 is connected with the drain electrode of a junction field effect transistor Q2 through a resistor R4, the source electrode of the junction field effect transistor Q2 is grounded through a resistor R11 and a capacitor C10 which are connected in parallel, the grid electrode of the junction field effect transistor Q2 is divided into two paths, one path is grounded through a capacitor C8 and a resistor R13 in turn, the other path is connected with the +12V power supply through a resistor R7 and a resistor R7, the connecting end of the resistor R7 and the capacitor C7 is grounded through a capacitor C7 and a capacitor C7 which are connected in parallel, the connecting end of the resistor R7 and the capacitor C8 is the input end of the first pre-amplification circuit, the output end of the operational amplifier U1 is divided into two paths, one path is connected with the grid electrode of the junction field effect transistor Q2 through the resistor R10 and the capacitor C9 which are connected in parallel, and the other path is connected with one end of the capacitor C6;
the other end of the capacitor C6 is divided into two paths, one path is connected with the inverting input end of the operational amplifier U1 through a resistor R8, the other path is connected with the inverting input end of the operational amplifier U2 through a resistor R5 and a resistor R6 in sequence, the connecting end of the resistor R5 and the resistor R6 is grounded through a capacitor C7, the non-inverting input end of the operational amplifier U2 is connected with the inverting input end of the operational amplifier U1 through a resistor R9, the output end of the operational amplifier U2 is connected with the non-inverting input end of the operational amplifier U2 through a resistor R1 and a capacitor C3 which are connected in parallel, and the output end of the operational amplifier U2 is the output end of the first pre-amplification circuit.
The radioactive fission gas detection device is characterized in that: the semiconductor main detector and the semiconductor anti-coincidence detector are PIPS semiconductor detectors, and the second pre-amplification circuit is the same as the first pre-amplification circuit.
The radioactive fission gas detection device is characterized in that: the air sampling device is characterized in that an air inlet pipe and an air outlet pipe are arranged on the sampling air chamber, an air extracting pump is arranged on the air outlet pipe, the air inlet pipe and the air outlet pipe are respectively arranged on two opposite corners of the sampling air chamber, the air inlet pipe is arranged close to the mounting shell, and a through hole for the air inlet pipe and the air outlet pipe to penetrate through is formed in the lead shielding shell.
The radioactive fission gas detection device is characterized in that: the aviation plug is arranged on the installation shell, one end of the aviation plug penetrates through the installation shell and extends into the installation shell, and the signal processing circuit board is connected with the computer through the aviation plug.
The radioactive fission gas detection device is characterized in that: and the detection end of the semiconductor main detector is abutted against the titanium film sealing window.
The radioactive fission gas detection device is characterized in that: the titanium film sealed window comprises a titanium film mounting frame and a titanium film mounted in the titanium film mounting frame, and the titanium film mounting frame is detachably connected with the sampling air chamber and the mounting shell.
Compared with the prior art, the utility model has the following advantage:
1. the utility model discloses a wrap up plumbous shielding casing outside sample air chamber and installation casing to reduce the influence of environment background to detector measuring result, thereby guarantee the accuracy of detecting result.
2. The utility model discloses a set up titanium membrane sealed window with the sample air chamber with detection processing mechanism keeps apart, prevents that detection processing mechanism from receiving the pollution.
3. The utility model discloses a set up two semiconductor detector, beta ray and gamma ray that produce after the inert gas decay in the semiconductor main detector detection sampling gas chamber because beta ray penetrability is not strong, the anti-detector that accords with of semiconductor can only detect gamma ray, can realize through subsequent data processing that the anti-of gamma background in the semiconductor main detector detection data accords with the deduction, and it is more accurate to make the data that the semiconductor main detector detected beta ray, and the result of use is better.
To sum up, the utility model discloses simple structure, through setting up two semiconductor detector, beta ray and gamma ray that produce after the inert gas decay in the semiconductor main detector detection sample gas chamber because beta ray penetrability is not strong, the anti-detector that accords with of semiconductor can only detect gamma ray, can realize through subsequent data processing that the anti-coincidence of the gamma background in the semiconductor main detector detection data is deducted, make the data that the semiconductor main detector detected beta ray more accurate, the result of use is better.
The technical solution of the present invention is further described in detail by the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic circuit diagram of a first preamplifier circuit according to the present invention.
Description of reference numerals:
1-sampling gas chamber; 2-mounting the shell; 3-a semiconductor main detector;
4-semiconductor anti-coincidence detector; 5-a signal processing circuit board; 6-titanium film mounting frame;
7-an air inlet pipe; 8-air outlet pipe; 9-an air pump;
10-an aviation plug; 11-a lead shielded housing; 12-titanium film.
Detailed Description
As shown in fig. 1 and fig. 2, the present invention comprises a lead shielding shell 11, a sampling air chamber 1 and a mounting shell 2, both disposed in the lead shielding shell 11 and on one side of the sampling air chamber 1, the installation shell 2 is internally provided with a detection processing mechanism which comprises a semiconductor main detector 3, a semiconductor anti-coincidence detector 4 and a signal processing circuit board 5 which are arranged in the installation shell 2 and are sequentially distributed towards the direction far away from the sampling air chamber 1, a titanium film sealing window for isolating the sampling air chamber 1 from the detection processing mechanism is arranged between the mounting shell 2 and the sampling air chamber 1, the detection ends of the semiconductor main detector 3 and the semiconductor anti-coincidence detector 4 are both arranged towards the sampling gas chamber 1, a first pre-amplification circuit connected with the semiconductor main detector 3 and a second pre-amplification circuit connected with the semiconductor anti-coincidence detector 4 are integrated on the signal processing circuit board 5;
the first preamplifier circuit comprises an operational amplifier U1 and an operational amplifier U2, the inverting input end of the operational amplifier U1 is divided into two paths, one path is connected with a +12V power supply through a resistor R3, the other path is grounded through a resistor R12 and a capacitor C11 which are connected in parallel, the non-inverting input end of the operational amplifier U1 is connected with the grid electrode of a junction field effect transistor Q1, the drain electrode of the junction field effect transistor Q1 is connected with the +12V power supply, the source electrode of the junction field effect transistor Q1 is connected with the drain electrode of a junction field effect transistor Q2 through a resistor R4, the source electrode of the junction field effect transistor Q2 is grounded through a resistor R11 and a capacitor C10 which are connected in parallel, the grid electrode of the junction field effect transistor Q2 is divided into two paths, one path is grounded through a capacitor C8 and a resistor R13 in turn, the other path is connected with the +12V power supply through a resistor R7 and a resistor R7, the connecting end of the resistor R7 and the capacitor C7 is grounded through a capacitor C7 and a capacitor C7 which are connected in parallel, the connecting end of the resistor R7 and the capacitor C8 is the input end of the first pre-amplification circuit, the output end of the operational amplifier U1 is divided into two paths, one path is connected with the grid electrode of the junction field effect transistor Q2 through the resistor R10 and the capacitor C9 which are connected in parallel, and the other path is connected with one end of the capacitor C6;
the other end of the capacitor C6 is divided into two paths, one path is connected with the inverting input end of the operational amplifier U1 through a resistor R8, the other path is connected with the inverting input end of the operational amplifier U2 through a resistor R5 and a resistor R6 in sequence, the connecting end of the resistor R5 and the resistor R6 is grounded through a capacitor C7, the non-inverting input end of the operational amplifier U2 is connected with the inverting input end of the operational amplifier U1 through a resistor R9, the output end of the operational amplifier U2 is connected with the non-inverting input end of the operational amplifier U2 through a resistor R1 and a capacitor C3 which are connected in parallel, and the output end of the operational amplifier U2 is the output end of the first pre-amplification circuit.
In this embodiment, the titanium film sealed window includes a titanium film mounting frame 6 and a titanium film 12 mounted in the titanium film mounting frame 6, one side of the titanium film mounting frame 6 is detachably connected to the sampling air chamber 1, the other side of the titanium film mounting frame 6 is detachably connected to the mounting case 2, and the thickness of the titanium film 12 is 10 μm.
In this embodiment, the operational amplifier U1 and the operational amplifier U2 both use an LM6264 type operational amplifier, the jfet Q1 and the jfet Q2 both use a low-noise high-frequency jfet 2N4416, the jfet Q1 and the jfet Q2 convert the charge signal into a voltage amplitude in a common source amplifier manner and the low-noise, wide-band operational amplifier U1 to output and realize the function of sensitive charge amplification, and the operational amplifier U2 further amplifies the voltage pulse for subsequent data processing.
In this embodiment, the resistances of the resistor R1, the resistor R3, the resistor R6, and the resistor R7 are all 1k Ω, the resistances of the resistor R2, the resistor R10, the resistor R11, the resistor R12, and the resistor R13 are 100M Ω, the resistance of the resistor R4 is 510 Ω, and the resistances of the resistor R5, the resistor R8, and the resistor R9 are all 2k Ω; the capacitance values of the capacitor C1, the capacitor C5, the capacitor C6, the capacitor C9, the capacitor C10 and the capacitor C11 are all 10nF, the capacitance values of the capacitor C2, the capacitor C3, the capacitor C4 and the capacitor C7 are all 100pF, and the capacitance value of the capacitor C8 is 1 pF.
It should be noted that, the lead shielding shell 11 is wrapped outside the sampling air chamber 1 and the mounting shell 2 to reduce the influence of the environmental background on the measurement result of the detector, thereby ensuring the accuracy of the detection result.
The titanium film sealing window is arranged to separate the sampling air chamber 1 from the detection processing mechanism, so that the detection processing mechanism is prevented from being polluted;
through setting up two semiconductor detector, beta ray and gamma ray that produce after the inert gas decay in the main detector 3 of semiconductor detects sample air chamber 1, because beta ray penetrability is not strong, the anti-gamma ray that can only detect of detector 4 of coincidence of semiconductor, can realize through subsequent data processing that the anti-coincidence of the gamma background in the main detector 3 detection data of semiconductor is deducted, make the main detector 3 of semiconductor detect the data of beta ray more accurate, the result of use is better.
In this embodiment, the semiconductor main detector 3 and the semiconductor anti-coincidence detector 4 are both PIPS semiconductor detectors, and the second pre-amplification circuit is the same as the first pre-amplification circuit.
It should be noted that the semiconductor main detector 3 and the semiconductor anti-coincidence detector 4 are identical, and therefore the corresponding first pre-amplification circuit and the corresponding second pre-amplification circuit are also identical.
In this embodiment, the sampling air chamber 1 is provided with an air inlet pipe 7 and an air outlet pipe 8, the air outlet pipe 8 is provided with an air pump 9, the air inlet pipe 7 and the air outlet pipe 8 are respectively arranged on two opposite corners of the sampling air chamber 1, the air inlet pipe 7 is arranged close to the mounting shell 2, and the lead shielding shell 11 is provided with a through hole for the air inlet pipe 7 and the air outlet pipe 8 to pass through.
In this embodiment, the mounting housing 2 is provided with an aviation plug 10, one end of the aviation plug 10 penetrates through the mounting housing 2 and extends into the mounting housing 2, and the signal processing circuit board 5 is connected with a computer through the aviation plug 10.
In this embodiment, five-core aviation plug is selected for use to aviation plug 10, through cable junction between aviation plug 10 and the computer, still integrated on the signal processing circuit board 5 with first preamplification circuit and second preamplification circuit connection's microcontroller and with the communication module that microcontroller connects, aviation plug 10 pass installation casing 2 stretch into to installation casing 2 in with communication module connects, microcontroller chooses for use to adopt C8051F124 microcontroller, communication module adopts the MAX485 chip.
In this embodiment, the detection end of the semiconductor main detector 3 abuts against the titanium film sealing window.
In this embodiment, the titanium film sealed window includes a titanium film mounting frame 6 and a titanium film 12 installed in the titanium film mounting frame 6, and the titanium film mounting frame 6 is detachably connected to the sampling air chamber 1 and the installation housing 2.
It should be noted that after the beta rays and the gamma rays pass through the titanium film sealed window, pulse signals are generated in the semiconductor main detector 3, and the detection end of the semiconductor main detector 3 abuts against the titanium film sealed window to ensure the accuracy of the measurement result.
When the utility model is used, the air pump 9 pumps the air containing inert gas into the sampling air chamber 1 at a constant speed, the beta radioactivity of the inert gas in the sampling air chamber 1 is measured by the semiconductor main detector 3 and the semiconductor reverse coincidence detector 4 which are just opposite to the sampling air chamber 1, the semiconductor main detector 3 detects the beta rays and the gamma rays generated after the decay of the inert gas in the sampling air chamber 1, because the penetrability of beta rays is not strong, the semiconductor anti-coincidence detector 4 can only detect gamma rays, and the anti-coincidence deduction of gamma background in the detection data of the semiconductor main detector 3 can be realized through subsequent data processing, so that the data of the semiconductor main detector 3 for detecting the beta rays is more accurate, the output signal of the detector is subjected to primary processing and amplification through the signal processing circuit board 5, so that the anti-interference capability of the output signal of the detector is stronger.
The above, only be the utility model discloses a preferred embodiment, it is not right the utility model discloses do any restriction, all according to the utility model discloses the technical entity all still belongs to any simple modification, change and the equivalent structure change of doing above embodiment the utility model discloses technical scheme's within the scope of protection.
Claims (6)
1. A radioactive fission gas detection apparatus, characterized by: including lead shielding shell (11) and all set up sample air chamber (1) in lead shielding shell (11) and installation casing (2) of setting in sample air chamber (1) one side, be provided with in installation casing (2) and survey processing mechanism, survey processing mechanism including set up in installation casing (2) and to semiconductor main detector (3) that the direction of keeping away from sample air chamber (1) laid in proper order, the semiconductor is anti accords with detector (4) and signal processing circuit board (5), be provided with between installation casing (2) and sample air chamber (1) and be used for keeping apart sample air chamber (1) with survey processing mechanism's titanium membrane sealing window, the detection end that semiconductor main detector (3) and semiconductor were anti to accord with detector (4) all lays towards sample air chamber (1), integrated on signal processing circuit board (5) have the first preamplification circuit who is connected with semiconductor main detector (3) and with the semiconductor is anti to accord with The second pre-amplification circuit is connected with the detector (4);
the first preamplifier circuit comprises an operational amplifier U1 and an operational amplifier U2, the inverting input end of the operational amplifier U1 is divided into two paths, one path is connected with a +12V power supply through a resistor R3, the other path is grounded through a resistor R12 and a capacitor C11 which are connected in parallel, the non-inverting input end of the operational amplifier U1 is connected with the grid electrode of a junction field effect transistor Q1, the drain electrode of the junction field effect transistor Q1 is connected with the +12V power supply, the source electrode of the junction field effect transistor Q1 is connected with the drain electrode of a junction field effect transistor Q2 through a resistor R4, the source electrode of the junction field effect transistor Q2 is grounded through a resistor R11 and a capacitor C10 which are connected in parallel, the grid electrode of the junction field effect transistor Q2 is divided into two paths, one path is grounded through a capacitor C8 and a resistor R13 in turn, the other path is connected with the +12V power supply through a resistor R7 and a resistor R7, the connecting end of the resistor R7 and the capacitor C7 is grounded through a capacitor C7 and a capacitor C7 which are connected in parallel, the connecting end of the resistor R7 and the capacitor C8 is the input end of the first pre-amplification circuit, the output end of the operational amplifier U1 is divided into two paths, one path is connected with the grid electrode of the junction field effect transistor Q2 through the resistor R10 and the capacitor C9 which are connected in parallel, and the other path is connected with one end of the capacitor C6;
the other end of the capacitor C6 is divided into two paths, one path is connected with the inverting input end of the operational amplifier U1 through a resistor R8, the other path is connected with the inverting input end of the operational amplifier U2 through a resistor R5 and a resistor R6 in sequence, the connecting end of the resistor R5 and the resistor R6 is grounded through a capacitor C7, the non-inverting input end of the operational amplifier U2 is connected with the inverting input end of the operational amplifier U1 through a resistor R9, the output end of the operational amplifier U2 is connected with the non-inverting input end of the operational amplifier U2 through a resistor R1 and a capacitor C3 which are connected in parallel, and the output end of the operational amplifier U2 is the output end of the first pre-amplification circuit.
2. A radioactive fission gas detection device according to claim 1, wherein: the semiconductor main detector (3) and the semiconductor anti-coincidence detector (4) are PIPS semiconductor detectors, and the second pre-amplification circuit is the same as the first pre-amplification circuit.
3. A radioactive fission gas detection device according to claim 1, wherein: the air sampling device is characterized in that an air inlet pipe (7) and an air outlet pipe (8) are arranged on the sampling air chamber (1), an air suction pump (9) is arranged on the air outlet pipe (8), the air inlet pipe (7) and the air outlet pipe (8) are respectively arranged on two opposite angles of the sampling air chamber (1), the air inlet pipe (7) is arranged close to the installation shell (2), and a through hole for the air inlet pipe (7) and the air outlet pipe (8) to pass through is formed in the lead shielding shell (11).
4. A radioactive fission gas detection device according to claim 1, wherein: the aviation plug (10) is arranged on the installation shell (2), one end of the aviation plug (10) penetrates through the installation shell (2) and extends into the installation shell (2), and the signal processing circuit board (5) is connected with a computer through the aviation plug (10).
5. A radioactive fission gas detection device according to claim 1, wherein: and the detection end of the semiconductor main detector (3) is abutted against the titanium film sealing window.
6. A radioactive fission gas detection device according to claim 1, wherein: the titanium film sealed window comprises a titanium film mounting frame (6) and a titanium film (12) mounted in the titanium film mounting frame (6), and the titanium film mounting frame (6) is detachably connected with the sampling air chamber (1) and the mounting shell (2).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121193219.XU CN214845799U (en) | 2021-05-31 | 2021-05-31 | Radioactive fission gas detection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121193219.XU CN214845799U (en) | 2021-05-31 | 2021-05-31 | Radioactive fission gas detection device |
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| CN214845799U true CN214845799U (en) | 2021-11-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116338761A (en) * | 2023-03-29 | 2023-06-27 | 西安中核核仪器股份有限公司 | Wide-range neutron dose rate instrument |
-
2021
- 2021-05-31 CN CN202121193219.XU patent/CN214845799U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116338761A (en) * | 2023-03-29 | 2023-06-27 | 西安中核核仪器股份有限公司 | Wide-range neutron dose rate instrument |
| CN116338761B (en) * | 2023-03-29 | 2024-06-07 | 西安中核核仪器股份有限公司 | Wide-range neutron dose rate instrument |
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Address after: Yanta District in Shaanxi province Xi'an City Road 710061, No. 108 Patentee after: Xi'an Zhonghe Nuclear Instrument Co.,Ltd. Address before: Yanta District in Shaanxi province Xi'an City Road 710061, No. 108 Patentee before: XI'AN ZHONGHE NUCLEAR APPARATUS CO.,LTD. |
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