CN214845605U - Junction temperature testing device - Google Patents
Junction temperature testing device Download PDFInfo
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- CN214845605U CN214845605U CN202120039421.0U CN202120039421U CN214845605U CN 214845605 U CN214845605 U CN 214845605U CN 202120039421 U CN202120039421 U CN 202120039421U CN 214845605 U CN214845605 U CN 214845605U
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Abstract
The present application provides a junction temperature testing apparatus, comprising: the environment box is used for accommodating the junction box and providing a temperature environment required by testing; the direct current voltage stabilizing source is electrically connected with the bypass diode of the junction box and used for providing voltage stabilizing current for the bypass diode; the voltage tester is electrically connected with the bypass diode and is used for detecting the voltage drop of the bypass diode; the temperature acquisition instrument comprises a temperature sensing probe, wherein the temperature sensing probe is fixed on the surface of the shell of the bypass diode through pouring sealant, and the temperature acquisition instrument is used for detecting the shell temperature of the bypass diode. The junction temperature testing device is simple and convenient to operate, the temperature sensing probe is fixed on the surface of the shell of the bypass diode through the pouring sealant, and the temperature sensing probe is prevented from being separated from the bypass diode, so that the accuracy of a testing result is improved, and the problems that the junction temperature testing device in the prior art is complex to operate and low in testing accuracy are solved.
Description
Technical Field
The application relates to the technical field of junction temperature testing, in particular to a junction temperature testing device.
Background
The solar energy is a renewable resource, and the conversion of the solar energy into the electric energy not only saves energy and relieves the shortage of power supply, but also reduces the environmental pollution. Therefore, solar photovoltaic technology is receiving increasing attention and favor of the public. The photovoltaic junction box is an important part of a solar photovoltaic module. The photovoltaic junction box is used for realizing interconnection of the photovoltaic assembly and an external power supply assembly and outputting power of the photovoltaic assembly to the outside. More importantly, the photovoltaic module junction box is also a bypass protection device of the photovoltaic module. When the battery in the photovoltaic module is hidden or shielded by shadow, the hot spot effect is generated, the temperature of the hot spot effect of the photovoltaic module is rapidly increased, and if no bypass protection device exists, the photovoltaic module is easily burnt out or even threatens the whole photovoltaic power station. In order to prevent the solar cell from being damaged due to the hot spot effect, a bypass diode is generally connected with the cell in parallel in the photovoltaic module junction box in a reverse direction, when the cell cannot generate electricity due to the hot spot effect, the diode is in a forward working conduction state to play a bypass role, current generated by other cells flows out of the diode, and the situation that a generating circuit cannot be conducted due to the fact that a certain cell has a problem is avoided. At this time, the diode is rapidly heated by a large amount of heat generated by the diode conducting in the forward direction, and if the junction temperature of the diode rises and exceeds the safe temperature, the assembly of the diode or the junction box is damaged or functional parameters are changed, so that the overall service life of the photovoltaic module is influenced, and therefore, the testing of the junction temperature performance of the bypass diode is very important.
The test procedure for bypass diode junction temperature is outlined in the international standard for photovoltaic module junction boxes, roughly as follows: heating a tested junction box sample to a specified temperature, then conducting a certain forward current to the junction box sample, testing the shell temperature of a bypass diode in the junction box and the voltage drop of two ends of the bypass diode after specified time, and finally calculating the junction temperature of the bypass diode through a formula. In this test procedure, the test accuracy of bypass diode shell temperature greatly influences the result of the temperature, and the device of test bypass diode shell temperature in the present trade, the temperature sensing probe of temperature data collection appearance are fixed through binding of wire alone, and not only the operation is complicated, hardly guarantees the temperature sensing probe of temperature data collection appearance moreover and realizes closely laminating with the bypass diode surface.
SUMMERY OF THE UTILITY MODEL
The main purpose of the present application is to provide a junction temperature testing apparatus, so as to solve the problems of complex operation and low testing accuracy of the junction temperature testing apparatus in the prior art.
In order to achieve the above object, according to one aspect of the present application, there is provided a junction temperature testing apparatus including: the environment box is used for accommodating the junction box and providing a temperature environment required by testing; the direct-current voltage stabilization source is electrically connected with the bypass diode of the junction box and used for providing voltage stabilization current for the bypass diode; the voltage tester is electrically connected with the bypass diode and is used for detecting the voltage drop of the bypass diode; the temperature acquisition instrument comprises a temperature sensing probe, wherein the temperature sensing probe is fixed on the surface of the shell of the bypass diode through pouring sealant, and the temperature acquisition instrument is used for detecting the shell temperature of the bypass diode.
Optionally, the pouring sealant is an organic silicon pouring sealant.
Optionally, a connection line between the temperature sensing probe and the body of the temperature collector is fixed on the casing of the junction box.
Optionally, the connecting wire is fixed on the housing of the junction box by an instant adhesive.
Optionally, the temperature of the environmental chamber ranges from 50 ℃ to 300 ℃.
By applying the technical scheme of the application, in the junction temperature testing device, the junction box is placed in the environment box, the environment box provides the temperature environment required by the test until the junction box is thermally stable, the bypass diode is electrified, the direct current voltage-stabilizing source provides the stabilized current for the bypass diode until the bypass diode is thermally stable, namely, the voltage drop of the bypass diode is detected by the voltage tester, the shell temperature of the bypass diode is detected by the temperature collector, so that the junction temperature current of the bypass diode is calculated according to the voltage drop and the shell temperature, the junction temperature testing device is simple and convenient to operate, the temperature sensing probe is fixed on the surface of the shell of the bypass diode through pouring sealant, the temperature sensing probe is prevented from being separated from the bypass diode, therefore, the accuracy of the test result is improved, and the problems that the junction temperature test device in the prior art is complex to operate and low in test accuracy are solved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
fig. 1 shows a schematic diagram of a junction temperature testing apparatus according to an embodiment of the present application.
Wherein the figures include the following reference numerals:
01. a junction box; 02. a bypass diode; 10. an environmental chamber; 20. a DC voltage regulator; 30. a voltage tester; 40. a temperature collector.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Also, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "connected" to the other element through a third element.
As described in the background, the junction temperature testing apparatus in the prior art has a complicated operation and low testing accuracy, and in order to solve the above problem, the present application provides a junction temperature testing apparatus.
According to an embodiment of the present application, there is provided a junction temperature testing apparatus, as shown in fig. 1, including:
an environment box 10 for accommodating the junction box 01 and providing a temperature environment required for testing;
a dc voltage regulator 20 electrically connected to the bypass diode 02 of the junction box 01 for providing a regulated current to the bypass diode 02;
a voltage tester 30 electrically connected to the bypass diode 02 for detecting a voltage drop of the bypass diode 02;
the temperature collector 40 includes a temperature sensing probe fixed on the surface of the housing of the bypass diode 02 by potting adhesive, and is configured to detect the housing temperature of the bypass diode 02.
In the junction temperature testing device, the junction box is placed in the environment box, the environment box provides a temperature environment required by testing until the junction box is thermally stable, the bypass diode is electrified, the direct current voltage-stabilizing source provides the stabilized current for the bypass diode until the bypass diode is thermally stable, namely, the voltage drop of the bypass diode is detected by the voltage tester, the shell temperature of the bypass diode is detected by the temperature collector, so that the junction temperature current of the bypass diode is calculated according to the voltage drop and the shell temperature, the junction temperature testing device is simple and convenient to operate, the temperature sensing probe is fixed on the surface of the shell of the bypass diode through pouring sealant, the temperature sensing probe is prevented from being separated from the bypass diode, therefore, the accuracy of the test result is improved, and the problems that the junction temperature test device in the prior art is complex to operate and low in test accuracy are solved.
In an embodiment of the present application, the potting adhesive is an organic silicon potting adhesive. Specifically, the organic silicon pouring sealant has good high temperature resistance, avoids the problem of debonding under high temperature conditions, further avoids the temperature sensing probe from being detached from the bypass diode, and certainly, the pouring sealant is not limited thereto, and those skilled in the art can select other suitable pouring sealants according to actual conditions.
In an embodiment of the present application, a connection line between the temperature sensing probe and the temperature collecting instrument body is fixed to a housing of the junction box. Specifically, the connecting line is fixed on the shell of the junction box, so that impact force on the temperature sensing probe caused by pouring sealant can be avoided, the temperature sensing probe is separated from the bypass diode, and the position of the temperature sensing probe can be further fixed under the condition that the organic silicon pouring sealant is not completely cured, and the temperature sensing probe is not required to be held by hands all the time.
In an embodiment of the present application, the connection line is fixed to the housing of the junction box by an instant adhesive. Specifically, the connection wire is fixed on the housing of the junction box by using an instant adhesive, which is simple and convenient to operate, and of course, the fixing manner is not limited thereto, and those skilled in the art may adopt other suitable fixing manners.
In an embodiment of the present application, the temperature range of the environmental chamber is 50 ℃ to 300 ℃. In particular, the above temperature range may meet the testing requirements of most junction boxes, such that the junction box may be thermally stable at a predetermined temperature. Of course, other suitable environmental chambers can be selected by those skilled in the art according to actual circumstances.
From the above description, it can be seen that the above-described embodiments of the present application achieve the following technical effects:
in the junction temperature testing device, the junction box is placed in the environment box, the environment box provides a temperature environment required by testing until the junction box is thermally stable, the bypass diode is electrified, the direct current voltage-stabilizing source provides the stabilized current for the bypass diode until the bypass diode is thermally stable, namely, the voltage drop of the bypass diode is detected by the voltage tester, the shell temperature of the bypass diode is detected by the temperature collector, so that the junction temperature current of the bypass diode is calculated according to the voltage drop and the shell temperature, the junction temperature testing device is simple and convenient to operate, the temperature sensing probe is fixed on the surface of the shell of the bypass diode through pouring sealant, the temperature sensing probe is prevented from being separated from the bypass diode, therefore, the accuracy of the test result is improved, and the problems that the junction temperature test device in the prior art is complex to operate and low in test accuracy are solved.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (5)
1. A junction temperature testing apparatus, comprising:
the environment box is used for accommodating the junction box and providing a temperature environment required by testing;
the direct-current voltage stabilization source is electrically connected with the bypass diode of the junction box and used for providing voltage stabilization current for the bypass diode;
the voltage tester is electrically connected with the bypass diode and is used for detecting the voltage drop of the bypass diode;
the temperature acquisition instrument comprises a temperature sensing probe, wherein the temperature sensing probe is fixed on the surface of the shell of the bypass diode through pouring sealant, and the temperature acquisition instrument is used for detecting the shell temperature of the bypass diode.
2. The device of claim 1, wherein the potting adhesive is a silicone potting adhesive.
3. The device of claim 1, wherein a connecting line between the temperature sensing probe and the body of the temperature collector is fixed on a housing of the junction box.
4. The device of claim 3, wherein the wiring is secured to the housing of the junction box by an instant adhesive.
5. The apparatus of claim 1, wherein the environmental chamber has a temperature in the range of 50 ℃ to 300 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120039421.0U CN214845605U (en) | 2021-01-07 | 2021-01-07 | Junction temperature testing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120039421.0U CN214845605U (en) | 2021-01-07 | 2021-01-07 | Junction temperature testing device |
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| CN214845605U true CN214845605U (en) | 2021-11-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116203377A (en) * | 2023-03-28 | 2023-06-02 | 天合光能股份有限公司 | Junction temperature testing device and junction temperature testing method |
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2021
- 2021-01-07 CN CN202120039421.0U patent/CN214845605U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116203377A (en) * | 2023-03-28 | 2023-06-02 | 天合光能股份有限公司 | Junction temperature testing device and junction temperature testing method |
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