CN214844914U

CN214844914U - Sample grid for transmission electron microscope

Info

Publication number: CN214844914U
Application number: CN202120575744.1U
Authority: CN
Inventors: 曾卓
Original assignee: Yangtze Memory Technologies Co Ltd
Current assignee: Yangtze Memory Technologies Co Ltd
Priority date: 2021-03-19
Filing date: 2021-03-19
Publication date: 2021-11-23
Anticipated expiration: 2031-03-19

Abstract

The utility model provides a sample grid for transmission electron microscope. The sample grid includes: the device comprises a substrate and at least one upright post which is positioned on one side of the substrate and extends outwards, wherein the upright post is used for adhering a sample; the stand includes: the first adhesion surface is used for adhering a sample so as to enable the sample to form a first preset angle with the substrate; the first preset angle is an acute angle. The utility model discloses a sample grid for transmission electron microscope can follow different relative angles and carry out the attenuate to the sample to satisfy the cutting demand to the structure of the variety of transmission electron microscope sample, and when needs carry out the attenuate with relative angle (non-90 degrees) to the sample, need not to carry out angular adjustment to the stand again, thereby shortened the system appearance time greatly, improved system appearance efficiency.

Description

Sample grid for transmission electron microscope

Technical Field

The utility model relates to the field of semiconductor technology, especially, relate to a sample grid for transmission electron microscope.

Background

Currently, in the field of semiconductor technology, Transmission Electron Microscopes (TEM) are increasingly used to observe the morphology of semiconductor devices, so as to analyze the failure of the semiconductor devices.

In the prior art, a round-head universal sample grid is generally adopted, and the shape of the sample grid is single, so that the mode that a TEM sample is adhered to a stand column of the sample grid is single, the cutting method of the TEM sample is further single, the requirements of different sample cutting methods for the TEM sample at present cannot be met, and the requirements of different structure analysis for the TEM sample at present cannot be met.

SUMMERY OF THE UTILITY MODEL

In view of this, the main object of the present invention is to provide a sample grid for transmission electron microscope to solve the problem that the sample grid of the general type of button head in the prior art can not satisfy the cutting requirement of the structure of the variety of samples.

In order to achieve the above purpose, the technical scheme of the utility model is realized like this:

the utility model provides a sample grid for transmission electron microscope, include: the device comprises a substrate and at least one upright post which is positioned on one side of the substrate and extends outwards, wherein the upright post is used for adhering a sample;

the stand includes: the first adhesion surface is used for adhering a sample so as to enable the sample to form a first preset angle with the substrate; the first preset angle is an acute angle.

According to the utility model discloses an embodiment, the axial cross-section of stand with the contained angle of basement is first preset angle.

According to an embodiment of the invention, the axial cross section of the upright is perpendicular to the base.

According to the utility model discloses an embodiment, the stand still includes: a second adhesion surface forming a second preset angle with the substrate; the second adhesion surface is used for adhering a sample so that the sample and the substrate form a second preset angle; the second preset angle is an acute angle.

According to an embodiment of the present invention, the first adhesion surface and the second adhesion surface are connected to form a V-shaped groove.

According to an embodiment of the present invention, the first adhesive surface and the second adhesive surface are connected to form a V-shaped protrusion.

According to the utility model discloses an embodiment, the stand still includes: a third adhesion surface parallel to the substrate; the third adhesion surface is used for adhering a sample so that the sample is parallel to the substrate.

According to the utility model discloses an embodiment, the stand still includes: a fourth adhesion surface perpendicular to the substrate; the fourth adhesion surface is used for adhering a sample so that the sample is parallel to the substrate.

According to the utility model discloses an embodiment, first predetermined angle with the angle is different in the second predetermined angle.

According to an embodiment of the present invention, the first predetermined angle is in a range of 65 ° to 75 °; the second preset angle ranges from 65 degrees to 75 degrees.

As described above, the utility model discloses a sample grid for transmission electron microscope is first adhesion face of predetermineeing the angle through setting up on the stand with the basement to make sample and basement be first predetermineeing the angle. The utility model discloses a sample grid for transmission electron microscope can follow different relative angles and carry out the attenuate to the sample, satisfies the cutting demand to the structure of the variety of transmission electron microscope sample, and when needs carry out the attenuate with relative angle (non-90 degrees) to the sample, need not to carry out angular adjustment to the stand again to system appearance time has been shortened greatly, has improved system appearance efficiency.

Drawings

FIG. 1 is a schematic diagram of the structure of a sample grid of a prior art TEM;

FIG. 2 is a schematic diagram of a prior art TEM grid, wherein (a) is a front view of a TEM sample bonded to a pillar and (b) is a top view of the pillar;

FIG. 3 is an enlarged schematic structural view of a TEM sample to be thinned;

fig. 4 is a front view of the upright post adhered to the TEM sample to be thinned according to the first embodiment of the present invention;

fig. 5 is a front view of a second embodiment of the present invention, after a pillar is adhered to a TEM sample to be thinned;

fig. 6 is a front view of a third embodiment of the present invention, after a pillar is adhered to a TEM sample to be thinned;

fig. 7 is a pillar according to a fourth embodiment of the present invention, in which (a) is a front view of the pillar and (b) is a top view of the pillar;

fig. 8 is a front view of the stand column according to the fourth embodiment of the present invention after adhering the TEM sample to be thinned;

fig. 9 is a front view of the stand column according to the fourth embodiment of the present invention, after another TEM sample to be thinned is adhered;

fig. 10 is a vertical column according to a fifth embodiment of the present invention, in which (a) is a front view of the vertical column and (b) is a top view of the vertical column;

fig. 11 is a front view of a TEM sample to be thinned after the column of the fifth embodiment of the present invention is adhered;

fig. 12 is a front view of a TEM sample to be thinned after being adhered to a column according to a sixth embodiment of the present invention;

fig. 13 is a schematic structural view of a sample grid of a transmission electron microscope according to the present invention;

the figure includes: 1-a substrate; 2-upright post; 3. 103-TEM sample to be thinned; 100-a substrate; 110. 120, 130, 140, 150, 160-columns; 101-a first preset angle; 102-a second preset angle; 111. 121, 131, 141, 151, 161-first adhesive face; 142. 152-a second adhesive surface; 163-third adhesion surface; 164-fourth adhesive side.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the embodiments of the present invention and the accompanying drawings, and obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Throughout the specification, unless otherwise specifically noted, terms used herein should be understood as having meanings as commonly used in the art. Accordingly, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. If there is a conflict, the present specification will control.

The invention will be further explained below with reference to a schematic example shown in the drawings. Various advantages of the present invention will become more apparent from the following description. Like reference numerals in the drawings refer to like parts. The shapes and dimensions of the various elements in the schematic drawings are illustrative only and are not to be construed as embodying the actual shapes, dimensions and absolute positions.

The present invention will be described in further detail with reference to the accompanying drawings and examples. It should be understood that the examples provided herein are merely illustrative of the present invention and are not intended to limit the present invention. In addition, the following embodiments are provided as some of the embodiments for implementing the present invention, not all of the embodiments for implementing the present invention, and the technical solutions described in the embodiments of the present invention can be implemented in any combination without conflict.

It should be noted that in the embodiments of the present invention, the terms "comprises", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion, so that a method or apparatus including a series of elements includes not only the explicitly recited elements, but also other elements not explicitly listed, or further includes elements inherent to the implementation of the method or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other related elements in a method or apparatus including the element (e.g., steps in a method or elements in an apparatus, such as a part of a circuit, a part of a processor, a part of a program or software, etc.).

It should be noted that the terms "first \ second \ third" related to the embodiments of the present invention only distinguish similar objects, and do not represent a specific ordering for the objects, and it should be understood that "first \ second \ third" may exchange a specific order or sequence when allowed. It is to be understood that the terms first, second, and third, as used herein, are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in other sequences than those illustrated or otherwise described herein.

In the present invention, the term "semiconductor device" refers to a device from which a TEM sample to be thinned is extracted. The semiconductor device may be a semiconductor chip, or the semiconductor device may be a semiconductor structure having any intermediate form in the process of forming a semiconductor chip.

In the present invention, the term "TEM sample to be thinned" refers to a part cut from the semiconductor device and adhered to the pillar of the TEM sample grid for observing the semiconductor device after thinning. And, the utility model discloses in, treat that the shape of attenuate TEM sample is the cuboid or is similar to the cuboid, and the thickness of the TEM sample after the attenuate is very thin, generally is 100 ~ 200 nm.

Fig. 3 is an enlarged structural schematic diagram of a TEM sample 3(103) to be thinned, where a is a long side of the TEM sample to be thinned, b is a wide side of the TEM sample to be thinned, and c is a thickness of the TEM sample to be thinned. In order to subsequently facilitate description of the adhesion relationship between the TEM sample to be thinned and the TEM sample grid, it is assumed that in the TEM sample to be thinned, a plane formed by the long side a and the wide side b is a first plane, a plane formed by the wide side b and the thickness c is a second plane, and a plane formed by the long side a and the thickness c is a third plane.

At present, in the field of semiconductor technology, TEM devices are increasingly used to observe the morphology of semiconductor devices, so as to analyze the failure of semiconductor devices. The TEM device projects the accelerated and gathered electron beams onto a TEM sample, electrons collide with atoms in the TEM sample to change the motion direction, so that solid angle scattering is generated, the size of a scattering angle is related to the density and the thickness of the TEM sample, therefore, images with different light and shade can be formed, and the images are displayed on an imaging device after being amplified and focused. In a TEM device, an electron beam impinges on a TEM sample located in a sample holder, and electrons transmitted through the TEM sample are focused to form an image. In order to ensure that the electron beam can penetrate the TEM sample, the TEM sample must be thin enough, and the thickness of the TEM sample is generally 100-200 nm.

Wherein the sample holder is provided with a TEM sample grid, and the sample holder can carry the TEM sample grid provided with the TEM sample so as to transport the TEM sample to a TEM device for observation.

Aiming at the technical field of semiconductors, the process of preparing a TEM sample is complex. The procedure for preparing TEM samples is as follows:

selecting a TEM observation target area on a semiconductor device, and depositing a Pt protective layer with the length of 5-8 mu m, the width of about 2 mu m and the thickness of about 1 mu m by taking the target area as a center. The deposition of the Pt protective layer is to avoid damage to the TEM sample by a Focused Ion Beam (FIB) in a subsequent sample preparation process.

And step two, hollowing out two sides of the target area by adopting an FIB process to form a TEM sample with the thickness of 1.5-2 μm and including the target area, and cutting off the bottom and the side of the TEM sample by using the FIB to form a U-shaped cut-off. At this time, only one end of the TEM sample is connected to the semiconductor device and suspended from the semiconductor device. The purpose of forming the U-shaped cut, among others, is to facilitate subsequent extraction of the TEM sample using a robotic nanoarm (easylift).

And step three, moving the mechanical nano arm to one suspended end of the TEM sample to enable the front end of the mechanical nano arm to be flush with the upper surface of the TEM sample, adhering the front end of the mechanical nano arm to the suspended end of the TEM sample, and cutting off the connection between the TEM sample and the semiconductor device by using FIB.

And step four, moving the mechanical nano arm adhered with the TEM sample to the TEM sample grid to enable the TEM sample to be in contact with the surface needing to be adhered to the TEM sample grid, adhering the TEM sample to the upright post of the TEM sample grid, and then cutting off the connection between the mechanical nano arm and the TEM sample. It should be noted that the TEM sample at this time is not a TEM sample that can be finally used for TEM device observation, but a TEM sample to be thinned that needs further thinning processing.

And step five, thinning the TEM sample to be thinned adhered to the TEM sample grid by using an FIB (focused ion beam) process until the thickness of the TEM sample to be thinned meets the use requirement of TEM measurement.

The utility model discloses in, treating that attenuate TEM sample carries out that the attenuate adopts is the FIB technology, and the focus ion beam direction of FIB is perpendicular to the basement of TEM sample grid all the time.

The utility model discloses in, the term "cut appearance method" refers to when treating that attenuate TEM sample glues to TEM sample grid back, in order to observe "characteristic structure" among the treat attenuate TEM sample of different angles, adopts different angles to treat attenuate TEM sample. It should be noted that the "feature" in the TEM sample to be thinned is substantially parallel to the first plane and the third plane of the TEM sample to be thinned, and the "feature" in the TEM sample to be thinned extends along the long side direction of the TEM sample to be thinned.

The utility model discloses, including following five kinds of sample cutting methods, be "tangent", "undercut", "truncation", "just oblique cutting" and "oblique cutting of falling respectively.

The tangent refers to that when the second plane of the TEM sample to be thinned is adhered to the vertical side wall of the upright column, the third plane on the upper part is upward, the third plane of the TEM sample to be thinned is parallel to the substrate, the TEM sample to be thinned is thinned by adopting FIB, and the cutting plane is parallel to the first plane, so as to observe the characteristic structure in the thinned TEM sample. Taking fig. 3 as an example, the "feature" is located in the region of TEM sample 3 to be thinned (103) adjacent to the upper third plane, and in doing so, the FIB will first cut the region where the "feature" is located.

"reverse cut" is another cut-to-size method in contrast to "tangent", where "features" are located in the region of TEM sample 3(103) to be thinned adjacent the upper third plane, as compared to "tangent" where "features" are located in the region of TEM sample 3(103) to be thinned adjacent the lower third plane. At the moment, the second plane of the TEM sample to be thinned is adhered to the vertical side wall of the upright column, so that the third plane of the lower part is upward, the third plane of the sample to be thinned is parallel to the substrate, the TEM sample to be thinned is thinned by adopting FIB, and the cutting plane is parallel to the first plane, so as to observe the characteristic structure in the thinned TEM sample. Taking fig. 3 as an example, the "feature" is located in the region of the TEM sample 3 to be thinned (103) adjacent to the lower third plane, so that the FIB will still cut the "feature" first during the "back-cut" process.

The "tangent" and "reverse cut" in the above sample cutting method are relative terms, as shown in fig. 3, assuming that the pillar is located at the left side of the sample, when the "feature" is closer to the upper third plane in the sample 3(103) to be thinned, the second plane at the left side of the TEM sample 3(103) to be thinned is stuck to the vertical sidewall of the pillar, and the FIB cuts in the direction perpendicular to the substrate (i.e., "top-down" in fig. 3), the FIB will cut the "feature" region first. When the feature is closer to the lower third plane in the sample 3(103) to be thinned, the TEM sample to be thinned needs to be rotated 180 °, and then the second plane on the left side of the TEM sample 3(103) to be thinned is bonded to the vertical sidewall of the pillar, and the FIB still cuts the feature region in the direction perpendicular to the substrate (i.e., "from top to bottom" in fig. 3).

Whether "tangent" or "reverse cut" in the above-described cut-sample method, the cutting direction of the FIB is substantially perpendicular to the extension direction of the "features" in the TEM sample to be thinned.

The 'flat cutting' refers to that when the third plane of the TEM sample to be thinned is adhered to the top of the upright post, the third plane of the TEM sample to be thinned is parallel to the substrate, the TEM sample to be thinned is thinned by adopting FIB, and the cutting plane is parallel to the first plane so as to observe a 'characteristic structure' in the thinned TEM sample. The TEM sample to be thinned is thinned by adopting a 'flat cutting' cutting method, and the method is mainly used for increasing the contact area between the TEM sample to be thinned and the stand column so as to avoid the phenomenon that the TEM sample to be thinned is broken in the thinning process or after being thinned due to the overlong long edge a and the over-thin thickness of the TEM sample to be thinned.

The term "normal and oblique cutting" refers to that when the third plane of the TEM sample to be thinned is adhered to the inclined plane of the column (the inclined plane and the base form a first preset angle), the third plane of the TEM sample to be thinned also forms a first preset angle with the base, the TEM sample to be thinned is thinned by FIB, and the cutting plane is parallel to the first plane, so as to observe the "characteristic structure" in the thinned TEM sample.

The reverse beveling refers to that when the second plane of the TEM sample to be thinned is adhered to the inclined plane of the upright column (the inclined plane and the substrate form a first preset angle), the third plane of the TEM sample to be thinned forms a first preset angle with the substrate, the TEM sample to be thinned is thinned by adopting FIB, and the cutting plane is parallel to the first plane so as to observe a 'characteristic structure' in the thinned TEM sample.

In the sample cutting methods of the normal beveling and the reverse beveling, the cutting direction of the FIB and the extending direction of the feature structure in the TEM sample to be thinned form a certain angle (at this time, the cutting direction and the extending direction are not in a mutually perpendicular relationship), so that the stress of the FIB on the feature structure in the thinning process can be reduced.

The structure of a typical TEM sample grid will be described below with reference to figures 1 and 2. As shown in fig. 1, a typical TEM sample grid includes a substrate 1 and pillars 2, the pillars 2 are perpendicular to one side of the substrate 1 and extend outward, and the pillars 2 can be used for adhering TEM samples 3 to be thinned. With further reference to fig. 2 and 3, the top of the columns 2 of the conventional TEM sample grid is approximately spherical, the sidewalls of the columns 2 are perpendicular to the base 1, and the TEM samples 3 to be thinned are adhered to the sidewalls of the columns 2. This is because the top of stand 2 is spherical, if will wait to attenuate TEM sample 3 adhesion to the top of stand 2, wait to attenuate and be the point contact between TEM sample 3 and the stand 2, the stability of adhesion is not good, is unfavorable for the follow-up attenuate of treating attenuate TEM sample 3.

From the above analysis, if the round-head universal type column 2 is required to be cut flatly, the column 2 needs to be cut flatly and dug according to the size of the TEM sample 3 to be thinned, the time spent on processing a single TEM sample is long, and the progress of sample preparation is affected.

As described above, the second plane of the TEM sample 3 to be thinned is typically bonded to the sidewalls of the pillars 2. At this time, the third plane of the TEM sample 3 to be thinned is parallel to the substrate. The TEM sample 3 to be thinned is thinned using a FIB perpendicular to the substrate 1 (also perpendicular to the third plane of the TEM sample 3 to be thinned).

The common TEM sample grid can only realize the tangent and the reverse cut of the TEM sample to be thinned, and the sample cutting method is single and cannot meet the structural analysis requirement on the diversity of the TEM sample at present. If the common round-head universal type upright post 2 needs to be subjected to 'forward beveling' or 'backward beveling', the upright post 2 needs to be subjected to angle adjustment according to the angle requirement of beveling, so that the time spent on processing a single TEM sample is long, and the sample preparation progress is seriously influenced. Therefore, there is an urgent need for a TEM sample grid that can satisfy different cropping methods.

The utility model discloses a sample grid for TEM, including the basement and lie in at least one stand of basement one side outside extension, the stand is used for adhesion sample; the stand includes: the first adhesion surface is used for adhering a sample so as to enable the sample to form a first preset angle with the substrate; the first preset angle is an acute angle.

Fig. 4 is a front view of the first embodiment of the present invention after the stand is adhered to the TEM sample to be thinned. As shown in fig. 4, an axial section (axial direction shown by a dotted line) of the pillar 110 is perpendicular to the base 100 (refer to fig. 13), and the top of the pillar 110 has a first adhesion surface 111 forming a first preset angle 101 with the base 100. The first adhesion surface 111 can be used for adhering the TEM sample 103 to be thinned. In this embodiment, the first adhesive surface of the pillar 110 can be used to realize "normal beveling" and "reverse beveling". If the third plane of the TEM sample 103 to be thinned is bonded to the first bonding surface 111, the third plane of the TEM sample 103 to be thinned is also at the first predetermined angle 101 with respect to the substrate 100. The FIB cuts the TEM sample 103 to be thinned along a direction perpendicular to the substrate 100, the cutting plane is parallel to the first plane of the TEM sample 103 to be thinned, and the cutting direction of the FIB is (90 ° -a first predetermined angle) with the extending direction of the features in the TEM sample 103 to be thinned. This method of cutting is known as "normal and oblique cutting". If the second plane of TEM sample 103 to be thinned is bonded to first bonding face 111, then the third plane of TEM sample 103 to be thinned is at (90 ° -first predetermined angle 101) to substrate 100. The FIB cuts the TEM sample 103 to be thinned along a direction perpendicular to the substrate 100, the cutting plane is parallel to a first plane of the TEM sample 103 to be thinned, and the cutting direction of the FIB and the extending direction of the characteristic structure in the TEM sample 103 to be thinned form a first preset angle. This method of cutting is known as "chamfering". Of course, the sidewalls of the pillars 110 perpendicular to the substrate 100 in this embodiment can also be used to realize "tangent" and "undercut".

In the embodiment of the application, the first preset angle is an acute included angle between the TEM sample to be thinned and the substrate.

Fig. 5 shows a front view of the second embodiment of the present invention after the pillar is adhered to the TEM sample to be thinned, as shown in fig. 5, an axial cross section (axial direction is shown by a dotted line in the figure) of the pillar 120 is also perpendicular to the substrate 100 (refer to fig. 13), the top of the pillar 120 is still of a round-head general type, and the sidewall of the pillar 120 has a first adhesion surface 121 forming a first preset angle 101 with the substrate 100. The first adhesion surface 121 can be used for adhering a TEM sample 103 to be thinned. Similarly to the example, if the third plane of the TEM sample 103 to be thinned is bonded to the first bonding surface 121, the third plane of the TEM sample 103 to be thinned is at the first predetermined angle 101 to the substrate 100, and the FIB cutting direction is at the (90 ° -first predetermined angle) extension direction of the features in the TEM sample 103 to be thinned. If the second plane of the TEM sample 103 to be thinned is adhered to the first adhesion surface 121, at this time, the third plane of the TEM sample 103 to be thinned forms a first preset angle (90 ° -first preset angle 101) with the substrate 100, and the cutting direction of the FIB forms a first preset angle with the extending direction of the feature structure in the TEM sample 103 to be thinned. If the second plane of TEM sample 103 to be thinned is bonded to the sidewall of pillar 120 perpendicular to substrate 100, then the third plane of TEM sample 103 to be thinned is parallel to substrate 100. Thus, shaft 120 of embodiment two can be used to achieve "tangent", "reverse cut", "normal bevel cut" and "reverse bevel cut" simultaneously.

As shown in fig. 6, an axial cross section (shown by a dotted line in an axial view) of the pillar 130 forms a first predetermined angle 101 with the base 100 (refer to fig. 13), a top portion of the pillar 130 is still of a round-head general type, and a sidewall of the pillar 130 is a first adhesion surface 131 forming the first predetermined angle 101 with the base 100. Similar to the first and second embodiments, the first adhesion surface 131 of the pillar 130 of the third embodiment can be used for adhering the TEM sample 103 to be thinned so as to realize the "forward beveling" and the "backward beveling" of the TEM sample 103 to be thinned.

It can be known from the above analysis that no matter "forward beveling" or "reverse beveling", a certain included angle is present between the TEM sample 103 to be thinned and the substrate 100, and through the structural design of the TME sample grid, the requirements of different sample cutting methods can be met, and the TEM sample to be thinned can be thinned through different angles, and the TEM sample to be thinned can be thinned at different relative angles (the angle between the FIB thinning direction and the extending direction of the "feature structure" in the TEM sample), so that the cutting requirements of the structure with diversity of the TEM sample can be met.

The pillars in the first to third embodiments each include a first adhesion surface forming a first predetermined angle with the substrate, and are applicable to various sample cutting methods, particularly, directly applicable to "normal beveling" and "reverse beveling". Therefore, before the TEM sample to be thinned is obliquely cut, the stand column is not required to be subjected to angle adjustment, so that a large amount of time can be saved, and the progress of sample preparation is accelerated.

Preferably, the first preset angle is 65-75 degrees. Namely, in the 'forward beveling', the angle range of the included angle between the third plane of the TEM sample to be thinned and the substrate is 65-75 degrees; in the inverted beveling process, the included angle between the third plane of the TEM sample to be thinned and the substrate ranges from 15 degrees to 25 degrees.

In order to further realize the diversification of the cutting angles in the cutting method, the upright post further comprises: a second adhesion surface forming a second preset angle with the substrate; the second adhesion surface is used for adhering a sample so that the sample and the substrate form a second preset angle; the second preset angle is an acute angle.

Fig. 7 to 9 show the column structure and the structure after the adhesion of the TEM sample is to be thinned according to the fourth embodiment of the present invention. As shown in fig. 7, the sidewall of the pillar 140 is perpendicular to the substrate 100, the pillar 140 includes a first adhesion surface 141 and a second adhesion surface 142, the first adhesion surface 141 and the second adhesion surface 142 respectively form a first preset angle 101 and a second preset angle 102 with the substrate 100, and the first adhesion surface 141 and the second adhesion surface 142 are connected to form a V-shaped groove. The first preset angle 101 and the second preset angle 102 may be the same or different. In a preferred embodiment, the first predetermined angle 101 is different from the second predetermined angle 102. When the first preset angle 101 is the same as the second preset angle 102, the pillars 140 provide the same inclination angle for the "forward beveling" and the "backward beveling" of the TEM sample 103 to be thinned. When the first preset angle 101 is different from the second preset angle 102, the pillars 140 provide different tilt angles for the "forward bevel" and the "backward bevel" of the TEM sample 103 to be thinned (see fig. 8). Likewise, the post 140 of the fourth embodiment can also be used to achieve "tangent" and "undercut". Through the structural design, not only can different sample cutting methods be realized on one upright column, but also various inclination angles can be provided for 'forward beveling' and 'backward beveling'.

In the embodiment of the application, the second preset angle is an acute included angle between the TEM sample to be thinned and the substrate.

Referring to fig. 9, fig. 9 shows the pillars 140 of the fourth embodiment, and at this time, the placing method of the TEM sample 103 to be thinned is different from that shown in fig. 8. The TEM sample 103 to be thinned is simultaneously bonded to the first bonding face 141 and the second bonding face 142, and at this time, the third plane of the sample 103 to be thinned is parallel to the substrate 100. The FIB cuts along a direction perpendicular to the substrate 100 all the time, and the cutting plane is parallel to the first plane of the sample 103 to be thinned, so as to realize the thinning of the sample 103 to be thinned in the thickness direction. Therefore, for the column 140 of the fourth embodiment, five sample cutting methods of "tangent", "reverse cutting", "flat cutting", "normal oblique cutting" and "reverse oblique cutting" can be simultaneously realized.

The stand in the fourth embodiment includes the first adhesion surface and the second adhesion surface, and the TEM sample to be thinned can be simultaneously adhered to the first adhesion surface and the second adhesion surface, so that the stand can be applied to the 'flat cutting'. Therefore, before the TEM sample to be thinned is subjected to 'flat cutting', the upright column does not need to be flattened and dug, so that a large amount of time can be saved, and the progress of sample preparation is accelerated.

Fig. 10 and 11 show the structure of the vertical column of the fifth embodiment of the present invention and the structure after the TEM sample is adhered and thinned. As shown in fig. 10, the sidewall of the pillar 150 is perpendicular to the substrate 100, the pillar 150 includes a first adhesion surface 151 and a second adhesion surface 152, the first adhesion surface 151 and the second adhesion surface 152 are at a first preset angle 101 and a second preset angle 102 with respect to the substrate 100, respectively, and the first adhesion surface 151 and the second adhesion surface 152 are connected to form a V-shaped protrusion. Similar to the fourth embodiment, the first preset angle 101 and the second preset angle 102 may be the same or different. In a preferred embodiment, the first predetermined angle 101 is different from the second predetermined angle 102. When the first predetermined angle 101 is the same as the second predetermined angle 102, the pillars 150 can only provide a tilt angle for the "forward bevel" and the "backward bevel" of the TEM sample 103 to be thinned. When the first preset angle 101 is different from the second preset angle 102, the pillars 140 can provide two tilt angles for the "forward beveling" and the "backward beveling" of the TEM sample 103 to be thinned (see fig. 11). Likewise, the post 150 of the fifth embodiment can also be used to achieve "tangent" and "undercut". Therefore, the column 150 of the fifth embodiment can simultaneously realize four sample cutting methods of "tangent", "reverse cutting", "normal oblique cutting" and "reverse oblique cutting". Compared with the pillar 140 of the fourth embodiment, the structure of the pillar 150 of the fifth embodiment can provide a larger space for adhesion of the TEM sample to be thinned. This is because the two adhesion surfaces of the four middle columns 140 in the embodiment are connected to form the V-shaped groove, if the TEM samples to be thinned, which are to be "chamfered" are placed on both adhesion surfaces, the space of the V-shaped groove may be crowded, there is no barrier between the TEM samples to be thinned on the two opposite sides, and when one side is thinned, the focused ion beam and the sputtered material generated during the thinning process may cause contamination to the TEM sample to be thinned on the other side.

Preferably, the second preset angle is also 65-75 degrees. Namely, in the 'forward beveling', the angle range of the included angle between the third plane of the TEM sample to be thinned and the substrate is 65-75 degrees; in the inverted beveling process, the included angle between the third plane of the TEM sample to be thinned and the substrate ranges from 15 degrees to 25 degrees.

In order to realize better sample cutting effect, the upright post of the utility model also comprises a third adhesion surface parallel to the substrate; the third adhesion surface is used for adhering a sample so that the sample is parallel to the substrate. And, the pillar further includes: a fourth adhesion surface perpendicular to the substrate; the fourth adhesion surface is used for adhering a sample so that the sample is parallel to the substrate.

As shown in fig. 12, the stand column 160 according to the sixth embodiment of the present invention includes a first adhesion surface 161, a third adhesion surface 163 and a fourth adhesion surface 164, wherein the first adhesion surface 161 and the substrate 100 are at a first preset angle 101, the third adhesion surface 163 is parallel to the substrate 100, and the fourth adhesion surface is perpendicular to the substrate 100. And when the third plane of the TEM sample 103 to be thinned is adhered to the first adhesion surface 161, at this time, the third plane of the TEM sample 103 to be thinned forms a first preset angle 101 with the substrate 100, the TEM sample is thinned by using FIB, and the cutting plane is parallel to the first plane. This method of cutting is called "straight beveling". Likewise, "back-beveling" of the sample can also be achieved when the second planar surface of TEM sample 103 to be thinned is bonded to first bonding face 161. And when the third plane of the TEM sample 103 to be thinned is adhered to the third adhesion surface 163, at this time, the third plane of the TEM sample 103 to be thinned is parallel to the substrate 100, the TEM sample is thinned by FIB, and the cutting plane is parallel to the first plane. This method of cutting is known as "flat cutting". Unlike the fourth embodiment (shown by referring to fig. 9), in the fourth embodiment, only two wide sides b of the TEM sample 103 to be thinned are adhered to the first adhesion surface 141 and the second adhesion surface 142 respectively; in the sixth embodiment, the whole third plane of the TEM sample to be thinned is adhered to the third adhesion plane (the contact area between the TEM sample to be thinned and the column is the largest), so that the adhesion effect is better, and the TEM sample can be thinned conveniently in the subsequent process.

The column in the sixth embodiment includes the third adhesion surface, and the entire third plane of the TEM sample to be thinned can be completely adhered to the third adhesion surface, so that the column can be applied to "flat cutting". The upright posts are not required to be flattened and dug before the TEM sample to be thinned is subjected to 'flat cutting', so that a large amount of time can be saved, and the progress of sample preparation is accelerated.

Still referring to fig. 12, when the second plane of the TEM sample 103 to be thinned is bonded to the fourth bonding plane 164, the third plane of the TEM sample 103 to be thinned is parallel to the substrate 100, the TEM sample to be thinned is thinned using FIB, and the cutting plane is parallel to the first plane. This method of cutting is known as "tangent". Correspondingly, the fourth adhesion face 164 perpendicular to the substrate 100 can also be used to achieve "undercutting" of the TEM sample 103 to be thinned.

Fig. 13 shows a schematic structural diagram of a TEM sample grid according to the present invention. The TEM sample grid comprises a substrate 100 and 4

pillars

2, 140, 150, 160. The upright 2 is a round-head universal type upright, the upright 140 is shown in the fourth embodiment, the upright 150 is shown in the fifth embodiment, and the upright 160 is shown in the sixth embodiment. The TEM sample grid shown in fig. 13 has 4 columns, and in practice, the number of columns in the TEM sample grid is not particularly limited. There may be, for example, 5, 6, 7, 8, or even more columns in the TEM sample grid. Of course, the structure of the vertical columns in the TEM sample grid is not limited to the four shown in the drawings, and the vertical columns with various structures as described above and the combination of the vertical columns with the structures of the embodiments can be used in the TEM sample grid of the present invention.

The utility model discloses a TEM sample grid can be applicable to "tangent", "undercut", "concora crush", "normal bias cut" and "chamfer" five kinds of sample cutting methods simultaneously including a plurality of different structural design's stand to can follow different relative angles and carry out the attenuate to the sample, satisfy the cutting demand to the structure of the variety of TEM sample. Furthermore, adopt the utility model discloses a when TEM sample grid carries out the attenuate with relative angle (non-90 degrees) to the sample, need not to carry out angular adjustment to the stand again to can shorten system appearance time, accelerate system appearance progress.

The above is only the preferred embodiment of the present invention, not limiting the scope of the present invention, all of which are under the concept of the present invention, the equivalent structure transformation made by the contents of the specification and the drawings is utilized, or the direct/indirect application is included in other related technical fields in the protection scope of the present invention.

Claims

1. A grid of samples for a transmission electron microscope, comprising: the device comprises a substrate and at least one upright post which is positioned on one side of the substrate and extends outwards, wherein the upright post is used for adhering a sample;

2. The sample grid according to claim 1, wherein the axial cross-section of the pillars is at a first predetermined angle to the base.

3. The sample grid according to claim 1, wherein the axial cross-section of the pillars is perpendicular to the base.

4. The sample grid according to claim 1, wherein said uprights further comprise: a second adhesion surface forming a second preset angle with the substrate; the second adhesion surface is used for adhering a sample so that the sample and the substrate form a second preset angle; the second preset angle is an acute angle.

5. The sample grid according to claim 4, wherein said first adhesive surface and said second adhesive surface are joined to form a V-shaped groove.

6. The sample grid according to claim 4, wherein the first adhesive surface and the second adhesive surface are joined to form a V-shaped protrusion.

7. The sample grid according to claim 1, wherein said uprights further comprise: a third adhesion surface parallel to the substrate; the third adhesion surface is used for adhering a sample so that the sample is parallel to the substrate.

8. The sample grid according to any one of claims 1 to 7, wherein the uprights further comprise: a fourth adhesion surface perpendicular to the substrate; the fourth adhesion surface is used for adhering a sample so that the sample is parallel to the substrate.

9. The sample grid according to any of claims 4 to 6, wherein the first predetermined angle and the second predetermined angle are different.

10. The sample grid according to any of claims 4 to 6, wherein said first predetermined angle is in the range of 65 ° to 75 °; the second preset angle ranges from 65 degrees to 75 degrees.