CN214798981U - 1800W-level half-bridge hard switch charging circuit and device based on gallium nitride mos tube - Google Patents
1800W-level half-bridge hard switch charging circuit and device based on gallium nitride mos tube Download PDFInfo
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- CN214798981U CN214798981U CN202121168935.2U CN202121168935U CN214798981U CN 214798981 U CN214798981 U CN 214798981U CN 202121168935 U CN202121168935 U CN 202121168935U CN 214798981 U CN214798981 U CN 214798981U
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Abstract
The utility model relates to a 1800W level half-bridge hard switch charging circuit and device based on gallium nitride mos pipe, the 1800W level half-bridge hard switch charging circuit based on gallium nitride mos pipe that device casing inner space set up has included rectifier module, power switch tube module, main output module, output switch device module, signal conditioning module, single-chip microcomputer module and pulse width modulation module. The pulse width modulation module comprises an integrated PWM control chip and provides a pulse modulation basis for low-power half-bridge high-frequency charging. Under the coordination of all functional circuits, the efficiency and the power consumption of a 1800W-level half-bridge hard switching charging circuit based on a gallium nitride MOS tube are balanced through the switching characteristics of the output switching device module based on the gallium nitride MOS tube. Meanwhile, through the selection of the gallium nitride MOS tube, the size of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is reduced, and the response of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is improved. Based on this, improve the comprehensive properties of miniwatt half-bridge high frequency charging.
Description
Technical Field
The utility model relates to a power supply circuit technical field especially relates to a 1800W level half-bridge hard switch charging circuit and device based on gallium nitride mos pipe.
Background
With the increasing development of electronic products, various electronic products are in endless. Various electronic products generally need to be connected with a mains supply through a charger to obtain charging or power supply. The charging device is used for charging power batteries or energy storage batteries in the new energy field, such as agvs (automated Guided vehicles), RGVs (Rail Guided vehicles), robots, unmanned planes, unmanned boats and the like.
The switching power supply-charger can be roughly classified into a hard switch and a soft switch according to the switching characteristics. The hard switch has fast transient response, but the soft switch has little slower transient response than the hard switch, so that the switch tube is easy to break down and damage in the dynamic output process of the charger. Meanwhile, a switching tube adopted in the conventional 500-1800W small-power charger is difficult to balance efficiency and power consumption, and is not beneficial to controlling the size of the charger.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a 1800W grade half-bridge hard-switch charging circuit and device based on gallium nitride mos tube, aiming at the defects that the switching tube adopted in the current 500W-1200W medium-low power charger is difficult to balance efficiency and power consumption and is not beneficial to controlling the volume of the charger.
A1800W class half-bridge hard switching charging circuit based on gallium nitride mos tube includes:
the rectification module is used for accessing alternating current;
the power switching tube module is connected with the rectifying module;
the main output module is connected with the power switch tube module;
the output switching device module is connected with the main output module and is used for providing a direct current output node; the switch tube of the output switch device module comprises a gallium nitride MOS tube;
the signal conditioning module is used for connecting a direct current output node;
the singlechip module is respectively connected with the output switch device module and the signal conditioning module;
the pulse width modulation module is respectively connected with the power switch tube module, the main output module and the single chip microcomputer module; the pulse width modulation module comprises an integrated PWM control chip.
The 1800W-level half-bridge hard switch charging circuit based on the gallium nitride mos tube comprises a rectifying module, a power switch tube module, a main output module, an output switch device module, a signal conditioning module, a single chip microcomputer module and a pulse width modulation module. The pulse width modulation module comprises an integrated PWM control chip and provides a pulse modulation basis for low-power half-bridge high-frequency charging. Under the coordination of all functional circuits, the efficiency and the power consumption of a 1800W-level half-bridge hard switching charging circuit based on a gallium nitride MOS tube are balanced through the switching characteristics of the output switching device module based on the gallium nitride MOS tube. Meanwhile, through the selection of the gallium nitride MOS tube, the size of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is reduced, and the response of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is improved. Based on this, improve the comprehensive properties of miniwatt half-bridge high frequency charging.
In one embodiment, the integrated PWM control chip comprises a 3525 chip.
In one embodiment, the pulse width modulation module further includes a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, a first adjustable resistor, a second adjustable resistor, a first capacitor, a first triode, a second triode, a third triode, and an operational amplifier;
the adjusting end of the first adjustable resistor is connected with a pin 1 of the 3525 chip, the first end of the first adjustable resistor is grounded through the second resistor, and the second end of the first adjustable resistor is connected with the main output module through the first resistor;
a collector of the third triode is connected with a pin 8 of the 3535 chip, an emitter of the third triode is used for grounding, a base of the third triode is connected with a collector of the second triode through a sixth resistor, a base of the second triode is connected with a pin 16 of the 3525 chip, an emitter of the second triode is used for being connected with power supply voltage through a fourth resistor, and an emitter of the second triode is used for being connected with an output end of the operational amplifier through a fifth resistor;
the non-inverting input end of the operational amplifier is used for grounding, the inverting input end of the operational amplifier is connected with the output end of the operational amplifier through a first capacitor, and the inverting input end of the operational amplifier is connected with the main output module and the first end of the second adjustable resistor through a third resistor;
the adjusting end of the second adjustable resistor is connected with the second end of the second adjustable resistor, the second end of the second adjustable resistor is connected with the emitting electrode of the first triode, the base electrode of the first triode is connected with the single chip microcomputer module through the seventh resistor, and the collecting electrode of the first triode is connected with the emitting electrode of the second triode.
In one embodiment, the signal conditioning module comprises:
the first end of the eighth resistor is used for connecting a direct current output node;
a first end of the ninth resistor is connected with the singlechip module, and a second end of the ninth resistor is connected with a second end of the eighth resistor;
and a first end of the tenth resistor is connected with a second end of the eighth resistor, and the second end of the tenth resistor is used for grounding.
In one embodiment, the single chip microcomputer module comprises a stm32 single chip microcomputer.
In one embodiment, the rectifier module comprises a half-bridge rectifier circuit.
In one embodiment, the main output module comprises:
the rectification filtering unit is connected with the power switch tube module;
and the signal feedback unit is connected with the rectifying and filtering unit, connected with the output switching device module and also connected with the pulse width modulation module.
In one embodiment, the method further comprises the following steps:
and the circuit protection module is used for connecting the direct current output node and providing a direct current output protection node.
In one embodiment, the circuit protection module includes a short circuit protection unit, an overvoltage protection unit, and a cutoff protection unit.
A1800W grade half-bridge hard switch charging device based on a gallium nitride mos tube comprises a device shell, an alternating current interface, a direct current interface and a 1800W grade half-bridge hard switch charging circuit based on the gallium nitride mos tube, wherein the 1800W grade half-bridge hard switch charging circuit is arranged in the inner space of the device shell;
the 1800W-level half-bridge hard switch charging circuit based on the gallium nitride mos tube comprises:
the rectification module is used for accessing alternating current through the alternating current interface;
the power switching tube module is connected with the rectifying module;
the main output module is connected with the power switch tube module;
the output switching device module is connected with the main output module and is used for providing a direct current output node; the switch tube of the output switch device module comprises a gallium nitride MOS tube; the direct current output node is used for being connected with external equipment to be powered through a direct current interface;
the signal conditioning module is used for connecting a direct current output node;
the singlechip module is respectively connected with the output switch device module and the signal conditioning module;
the pulse width modulation module is respectively connected with the power switch tube module, the main output module and the single chip microcomputer module; the pulse width modulation module comprises an integrated PWM control chip.
The 1800W-level half-bridge hard-switch charging device based on the gallium nitride mos tube comprises a rectifying module, a power switch tube module, a main output module, an output switch device module, a signal conditioning module, a single chip microcomputer module and a pulse width modulation module. The pulse width modulation module comprises an integrated PWM control chip and provides a pulse modulation basis for low-power half-bridge high-frequency charging. Under the coordination of all functional circuits, the efficiency and the power consumption of a 1800W-level half-bridge hard switching charging circuit based on a gallium nitride MOS tube are balanced through the switching characteristics of the output switching device module based on the gallium nitride MOS tube. Meanwhile, through the selection of the gallium nitride MOS tube, the size of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is reduced, and the response of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is improved. Based on this, improve the comprehensive properties of miniwatt half-bridge high frequency charging.
Drawings
Fig. 1 is a block diagram of an embodiment of a 1800W class gan mos transistor-based half-bridge hard-switched charging circuit;
FIG. 2 is a block diagram of an 1800W class GaN mos transistor-based half-bridge hard-switched charging circuit according to another embodiment;
FIG. 3 is a schematic diagram of an exemplary 1800W class GaN mos based half-bridge hard-switched charging circuit;
fig. 4 is a block diagram of an embodiment of a 1800W class gan mos based half-bridge hard-switched charger module.
Detailed Description
For better understanding of the objects, technical solutions and technical effects of the present invention, the present invention will be further explained with reference to the accompanying drawings and embodiments. It is to be noted that the following examples are only for explaining the present invention and are not intended to limit the present invention.
The embodiment of the utility model provides a 1800W level half-bridge hard switch charging circuit based on gallium nitride mos pipe.
Fig. 1 is a schematic block diagram of an embodiment 1800W grade gan mos transistor-based half-bridge hard-switched charging circuit, and as shown in fig. 1, the embodiment 1800W grade gan mos transistor-based half-bridge hard-switched charging circuit includes a module 100, a module 101, a module 102, a module 103, a module 104, a module 105, and a module 106:
the rectifying module 100 is used for accessing alternating current;
the rectifier module 100 is used for receiving an alternating current, shaping the alternating current into a direct current, and outputting the direct current to the power switch tube module 101. In one embodiment, the rectifier module 100 is a half-bridge rectifier circuit to provide 500-1800W half-bridge rectification.
The power switching tube module 101 is connected with the rectifying module 100;
the power switching tube module 101 includes a circuit composed of switching tubes, and the switching characteristics of the 1800W-level half-bridge hard-switching charging circuit based on the gallium nitride mos tube are realized according to the pulse width modulation signal of the pulse width modulation module 106. In one embodiment, the power switch tube module 101 includes a gallium nitride MOS tube.
The main output module 102 is connected with the power switch tube module 101;
the main output module 102 receives the dc output of the power switching transistor module 101, performs corresponding processing, and feeds back a signal to the pulse width modulation module 106, so as to provide a control reference for the pulse width modulation module 106.
In one embodiment, fig. 2 is a block diagram of an 1800W class gan mos transistor-based half-bridge hard-switched charging circuit according to another embodiment, and as shown in fig. 2, the main output block 102 includes a block 200 and a block 201:
the rectifying and filtering unit 200 is connected with the power switching tube module 101;
the rectifying and filtering unit 200 performs secondary rectifying and filtering on the dc output of the power switching tube module 101, so as to improve the stability of the dc signal.
And the signal feedback unit 201 is connected with the power switching tube module 101, the output switching device module 103 and the pulse width modulation module 106.
The signal feedback unit 201 is connected to the rectifying and filtering unit 200, and feeds back a reference signal to the pwm module 106 according to an output of the rectifying and filtering unit 200, so as to adjust the pwm signal of the pwm module 106.
An output switching device module 103 connected to the main output module 102 and providing a dc output node P1; the switching tube of the output switching device module 103 includes a gallium nitride MOS tube;
the output switching device module 103 provides a dc output node P1 for outputting dc power as a supply current to complete the half-bridge high frequency charging supply loop. Meanwhile, the output switching device module 103 is further configured to switch the half-bridge high-frequency charging power supply circuit according to a control signal of the single-chip microcomputer control module. In one embodiment, the switching tubes of the output switching device module 103 include gan MOS tubes to reduce power consumption and improve switching response while controlling the volume.
A signal conditioning module 104, configured to connect to a dc output node P1;
the signal conditioning module 104 is configured to collect a dc output of the dc output node P1, convert an analog current of the dc output into a digital feedback signal, send the digital feedback signal to the single chip microcomputer module 105, and adjust a control signal of the single chip microcomputer module 105, or adjust a feedback signal output from the single chip microcomputer module 105 to the pulse width modulation module 106, so as to adjust a pulse width modulation signal of the pulse width modulation module 106.
In one embodiment, fig. 3 is a schematic diagram of an 1800W class gan mos transistor-based half-bridge hard-switched charging circuit according to an embodiment, and as shown in fig. 3, the signal conditioning module 104 includes:
the first end of the eighth resistor R8 is used for connecting a direct current output node;
a first end of a ninth resistor R9, a ninth resistor R9 is connected with the singlechip module, and a second end of the ninth resistor R9 is connected with a second end of the eighth resistor R8;
a tenth resistor R10, a first end of the tenth resistor R10 is connected to a second end of the eighth resistor R8, and a second end of the tenth resistor R10 is connected to ground.
The common end of the eighth resistor R8 and the tenth resistor R10 is used for collecting a dc output signal of the dc output node P1, and the signal is output to the single chip microcomputer 105 through the ninth resistor R9 serving as an output resistor.
The singlechip module 105 is respectively connected with the output switch device module 103 and the signal conditioning module 104;
the singlechip microcomputer module 105 is used as the core of a 1800W grade half-bridge hard switching charging circuit based on a gallium nitride mos tube, and can select a 51 series or stm8/32 series singlechip. As a preferred embodiment, stm32 is used as the mcu 105, so as to balance control performance and cost.
The pulse width modulation module 106 is respectively connected with the power switching tube module 101, the main output module 102 and the singlechip module 105; the pulse width modulation module 106 includes an integrated PWM control chip.
The pwm module 106 is used as a core of the control, and outputs pwm signals to realize the corresponding control of each stage. The pulse width modulation module 106 comprises an integrated PWM control chip, which facilitates the construction of a low-power charging circuit of 500W-1800W. It should be noted that, unlike the fixed frequency pulse width modulation circuit, the integrated PWM control chip is advantageous for implementing a low power charging circuit with higher power.
In one embodiment, the integrated PWM control chip comprises a 3525 chip. The 3525 chip is selected, and a chip circuit module is used for realizing the function of the pulse width modulation module 106, so that the low-power charging circuit is suitable for being built in a low-power charging circuit of 500W-1800W.
In one embodiment, as shown in fig. 3, the pulse width modulation module 106 further includes a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first adjustable resistor VR1, a second adjustable resistor VR2, a first capacitor C1, a first transistor Q1, a second transistor Q2, a third transistor Q3, and an operational amplifier U1;
an adjusting end of the first adjustable resistor VR1 is connected to a pin 1 of the chip 3525, a first end of the first adjustable resistor VR1 is used for being grounded through a second resistor R2, and a second end of the first adjustable resistor VR1 is connected to the main output module 102 through a first resistor R1;
a collector of the third triode Q3 is connected with a pin 8 of the 3535 chip, an emitter of the third triode Q3 is used for grounding, a base of the third triode Q3 is connected with a collector of the second triode Q2 through a sixth resistor R6, a base of the second triode Q2 is connected with a pin 16 of the 3525 chip, an emitter of the second triode Q2 is used for connecting a power supply voltage through a fourth resistor R4, and an emitter of the second triode Q2 is used for connecting an output end of the operational amplifier U1 through a fifth resistor R5;
the non-inverting input end of the operational amplifier U1 is used for grounding, the inverting input end of the operational amplifier U1 is connected with the output end of the operational amplifier U1 through a first capacitor C1, and the inverting input end of the operational amplifier U1 is connected with the main output module and the first end of a second adjustable resistor VR2 through a third resistor R3;
the adjusting end of the second adjustable resistor VR2 is connected with the second end of the second adjustable resistor VR2, the second end of the second adjustable resistor VR2 is connected with the emitter of the first triode Q1, the base of the first triode Q1 is connected with the single chip microcomputer module 105 through the seventh resistor R7, and the collector of the first triode Q1 is connected with the emitter of the second triode Q2.
The first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the first adjustable resistor VR1, the second adjustable resistor VR2, the first capacitor C1, the first triode Q1, the second triode Q2, the third triode Q3 and the operational amplifier U1 are used as peripheral circuits of a 3525 chip, the signal transmission function of the 3525 chip is met, meanwhile, the applicability of the 3525 chip is enriched through the first adjustable resistor VR1 and the second adjustable resistor VR2, and the working characteristics of the whole 1800W-level half-bridge hard-switch charging circuit based on a gallium nitride mos tube are convenient to adjust.
In one embodiment, as shown in fig. 2, the 1800W class half-bridge hard-switch charging circuit based on gan mos transistor in another embodiment further includes:
the circuit protection module 300 is connected to the dc output node P1 and provides a dc output protection node P2.
The circuit protection module 300 optimizes the dc output node P1 by connecting the dc output node P1, provides a dc output protection node P2 for a device requiring power supply, and the device connects the dc output protection node P2 to obtain power supply and obtain corresponding power supply protection.
In one embodiment, as shown in fig. 2, the circuit protection module 300 includes a short-circuit protection unit 400, an overvoltage protection unit 401, and a cutoff protection unit 402.
The short-circuit protection unit 400 is used to provide short-circuit protection for the dc output protection node P2. The overvoltage protection unit 401 is used to provide overvoltage protection for the dc output protection node P2, and the cutoff protection unit 402 is used to provide cutoff protection for the dc output protection node P2. The short-circuit protection unit 400, the overvoltage protection unit 401, and the cutoff protection unit 402 may be implemented by using corresponding fuses or relay circuits.
The 1800W-level half-bridge hard-switching charging circuit based on the gallium nitride mos tube in any embodiment comprises a rectifying module 100, a power switching tube module 101, a main output module 102, an output switching device module 103, a signal conditioning module 104, a single chip microcomputer module 105 and a pulse width modulation module 106. The pulse width modulation module 106 includes an integrated PWM control chip, and provides a pulse modulation basis for low-power half-bridge high-frequency charging. Under the coordination of all functional circuits, the efficiency and the power consumption of the 1800W-level half-bridge hard-switching charging circuit based on the gallium nitride MOS tube are balanced through the switching characteristics of the output switching device module 103 based on the gallium nitride MOS tube. Meanwhile, through the selection of the gallium nitride MOS tube, the size of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is reduced, and the response of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is improved. Based on this, improve the comprehensive properties of miniwatt half-bridge high frequency charging.
The embodiment of the invention also provides a 1800W-level half-bridge hard switch charging device based on the gallium nitride mos tube.
Fig. 4 is a block diagram of an embodiment of an 1800W class gan mos transistor-based half-bridge hard-switch charging device, and as shown in fig. 4, an embodiment of a half-bridge high-frequency charging device includes a device housing 1000, an ac interface 1001, a dc interface 1002, and an 1800W class gan mos transistor-based half-bridge hard-switch charging circuit disposed in an inner space of the device housing;
the 1800W-level half-bridge hard switch charging circuit based on the gallium nitride mos tube comprises:
the rectifier module 100 is used for accessing alternating current through an alternating current interface 1001;
the power switching tube module 101 is connected with the rectifying module 100;
the main output module 102 is connected with the power switch tube module 101;
an output switching device module 103 connected to the main output module 102 and providing a dc output node P1; the switching tube of the output switching device module 103 includes a gallium nitride MOS tube; the direct current output node P1 is used for connecting an external device to be powered through the direct current interface 1002;
a signal conditioning module 104, configured to connect to a dc output node P1;
the singlechip module 105 is respectively connected with the output switch device module 103 and the signal conditioning module 104;
the pulse width modulation module 106 is respectively connected with the power switching tube module 101, the main output module 102 and the singlechip module 105; the pulse width modulation module 106 includes an integrated PWM control chip.
The device shell is used for protecting a 1800W grade half-bridge hard switching charging circuit based on a gallium nitride mos tube, and is convenient for the production of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride mos tube.
In one embodiment, the ac interface 1001 includes a plug, a terminal or a pincer, which facilitates the introduction of the external ac mains into the rectifier module 100.
In one embodiment, the dc interface 1002 includes a socket, a connection terminal, a USB charging interface, etc. for outputting dc power to an external device to be powered.
The 1800W-level half-bridge hard-switch charging device based on the gallium nitride mos tube, the 1800W-level half-bridge hard-switch charging circuit based on the gallium nitride mos tube and arranged in the inner space of the device shell 1000, comprises a rectifying module 100, a power switch tube module 101, a main output module 102, an output switch device module 103, a signal conditioning module 104, a single chip microcomputer module 105 and a pulse width modulation module 106. The pulse width modulation module 106 includes an integrated PWM control chip, and provides a pulse modulation basis for low-power half-bridge high-frequency charging. Under the coordination of all functional circuits, the efficiency and the power consumption of the 1800W-level half-bridge hard-switching charging circuit based on the gallium nitride MOS tube are balanced through the switching characteristics of the output switching device module 103 based on the gallium nitride MOS tube. Meanwhile, through the selection of the gallium nitride MOS tube, the size of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is reduced, and the response of the 1800W grade half-bridge hard switching charging circuit based on the gallium nitride MOS tube is improved. Based on this, improve the comprehensive properties of miniwatt half-bridge high frequency charging.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples only represent some embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. An 1800W class half-bridge hard-switched charging circuit based on gallium nitride mos transistor, comprising:
the rectification module is used for accessing alternating current;
the power switching tube module is connected with the rectifying module;
the main output module is connected with the power switch tube module;
the output switching device module is connected with the main output module and is used for providing a direct current output node; the switch tube of the output switch device module comprises a gallium nitride MOS tube;
the signal conditioning module is used for connecting the direct current output node;
the single chip microcomputer module is respectively connected with the output switch device module and the signal conditioning module;
the pulse width modulation module is respectively connected with the power switch tube module, the main output module and the single chip microcomputer module; wherein the pulse width modulation module comprises an integrated PWM control chip.
2. The 1800W class gan mos transistor-based half-bridge hard-switched charging circuit of claim 1, wherein the integrated PWM control chip comprises a 3525 chip.
3. The 1800W class gallium nitride mos transistor-based half-bridge hard-switched charging circuit of claim 2, wherein the pulse width modulation module further comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, a first adjustable resistor, a second adjustable resistor, a first capacitor, a first transistor, a second transistor, a third transistor, and an operational amplifier;
the adjusting end of the first adjustable resistor is connected with a pin 1 of the 3525 chip, the first end of the first adjustable resistor is grounded through the second resistor, and the second end of the first adjustable resistor is connected with the main output module through the first resistor;
a collector of the third triode is connected with a pin 8 of the 3535 chip, an emitter of the third triode is used for grounding, a base of the third triode is connected with a collector of the second triode through the sixth resistor, a base of the second triode is connected with a pin 16 of the 3525 chip, an emitter of the second triode is used for being connected with a power supply voltage through the fourth resistor, and an emitter of the second triode is used for being connected with an output end of the operational amplifier through the fifth resistor;
the non-inverting input end of the operational amplifier is used for grounding, the inverting input end of the operational amplifier is connected with the output end of the operational amplifier through the first capacitor, and the inverting input end of the operational amplifier is connected with the main output module and the first end of the second adjustable resistor through a third resistor;
the adjusting end of the second adjustable resistor is connected with the second end of the second adjustable resistor, the second end of the second adjustable resistor is connected with the emitting electrode of the first triode, the base electrode of the first triode is connected with the singlechip module through the seventh resistor, and the collecting electrode of the first triode is connected with the emitting electrode of the second triode.
4. The 1800W class gan mos transistor-based half-bridge hard-switched charging circuit of claim 1, wherein the signal conditioning module comprises:
a first end of the eighth resistor is used for connecting the direct current output node;
a first end of the ninth resistor is connected with the single chip microcomputer module, and a second end of the ninth resistor is connected with a second end of the eighth resistor;
a tenth resistor, a first end of the tenth resistor being connected to the second end of the eighth resistor, and a second end of the tenth resistor being used for grounding.
5. The 1800W class gallium nitride mos transistor-based half-bridge hard-switched charging circuit of claim 1, wherein the single-chip module comprises a stm32 single-chip microcomputer.
6. The 1800W class gan mos transistor-based half-bridge hard-switched charging circuit of claim 1, wherein the rectifier module comprises a half-bridge rectifier circuit.
7. The 1800W class gan mos transistor-based half-bridge hard-switched charging circuit of claim 1, wherein the main output module comprises:
the rectification filtering unit is connected with the power switch tube module;
and the signal feedback unit is connected with the rectifying and filtering unit, connected with the output switching device module and also connected with the pulse width modulation module.
8. The 1800W class gan mos transistor-based half-bridge hard-switched charging circuit of claim 1, further comprising:
and the circuit protection module is used for connecting the direct current output node and providing a direct current output protection node.
9. The 1800W class gan mos transistor-based half-bridge hard-switched charging circuit of claim 8, wherein the circuit protection module comprises a short circuit protection unit, an overvoltage protection unit and a current interruption protection unit.
10. A1800W grade half-bridge hard switch charging device based on a gallium nitride mos tube is characterized by comprising a device shell, an alternating current interface, a direct current interface and a 1800W grade half-bridge hard switch charging circuit based on the gallium nitride mos tube, wherein the 1800W grade half-bridge hard switch charging circuit is arranged in the inner space of the device shell;
the 1800W-level half-bridge hard switch charging circuit based on the gallium nitride mos tube comprises:
the rectification module is used for accessing alternating current through the alternating current interface;
the power switching tube module is connected with the rectifying module;
the main output module is connected with the power switch tube module;
the output switching device module is connected with the main output module and is used for providing a direct current output node; the switch tube of the output switch device module comprises a gallium nitride MOS tube; the direct current output node is used for being connected with external equipment to be powered through the direct current interface;
the signal conditioning module is used for connecting the direct current output node;
the single chip microcomputer module is respectively connected with the output switch device module and the signal conditioning module;
the pulse width modulation module is respectively connected with the power switch tube module, the main output module and the single chip microcomputer module; wherein the pulse width modulation module comprises an integrated PWM control chip.
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| CN202121168935.2U CN214798981U (en) | 2021-05-28 | 2021-05-28 | 1800W-level half-bridge hard switch charging circuit and device based on gallium nitride mos tube |
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| CN202121168935.2U CN214798981U (en) | 2021-05-28 | 2021-05-28 | 1800W-level half-bridge hard switch charging circuit and device based on gallium nitride mos tube |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117294294A (en) * | 2023-11-22 | 2023-12-26 | 深圳市弗镭斯激光技术有限公司 | Electro-optical Q switch driving circuit based on gallium nitride MOS tube |
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2021
- 2021-05-28 CN CN202121168935.2U patent/CN214798981U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117294294A (en) * | 2023-11-22 | 2023-12-26 | 深圳市弗镭斯激光技术有限公司 | Electro-optical Q switch driving circuit based on gallium nitride MOS tube |
| CN117294294B (en) * | 2023-11-22 | 2024-03-19 | 深圳市弗镭斯激光技术有限公司 | Electro-optical Q switch driving circuit based on gallium nitride MOS tube |
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