CN214756107U - Low-power high-precision pulse electroplating power supply - Google Patents

Low-power high-precision pulse electroplating power supply Download PDF

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CN214756107U
CN214756107U CN202121138777.6U CN202121138777U CN214756107U CN 214756107 U CN214756107 U CN 214756107U CN 202121138777 U CN202121138777 U CN 202121138777U CN 214756107 U CN214756107 U CN 214756107U
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mosfet
pulse
circuit
voltage
power supply
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张�林
刘广民
戴越
张勇斌
荆奇
王晗
沈杰
李建原
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Institute of Mechanical Manufacturing Technology of CAEP
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Institute of Mechanical Manufacturing Technology of CAEP
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Abstract

The utility model discloses a low-power high-precision pulse electroplating power supply, which comprises a controller, a driving circuit, a voltage regulating circuit and a forward and reverse pulse generating circuit; the controller is connected with the driving circuit, transmits a control signal to the driving circuit, controls the driving circuit to generate a driving signal and transmits the generated driving signal to the voltage regulating circuit and the forward and reverse pulse generating circuit, a voltage signal output by the voltage regulating circuit is used as an input signal of the forward and reverse pulse generating circuit, and the forward and reverse pulse generating circuit generates pulse current. The utility model provides a pulse current waveform of pulse power supply output is stable, when reaching peak current, does not have obvious overshoot, ringing.

Description

Low-power high-precision pulse electroplating power supply
Technical Field
The utility model belongs to the technical field of the pulse electroplating power supply, concretely relates to can produce the pulse waveform of arbitrary mode, and the low-power high accuracy pulse electroplating power supply that the current precision is high, the pulse current waveform is level and smooth stable.
Background
At present, the gold plating is widely applied to surface anticorrosion treatment of key parts of printed circuit boards, chip packages, optoelectronic devices and certain weapons, the gold plating layer is required to have high quality and few surface defects, and particularly in certain precise physical experiments, the gold plating layer of parts is required to have extremely high compactness, extremely low porosity and extremely small grain size, so that the obtaining of the gold plating layer with extremely high quality is of great importance. In the existing preparation method, pulse plating, including unidirectional pulse and periodically reversed pulse plating, is a commonly used method for obtaining a high-quality gold plating layer. Research finds that in the gold electroplating process, except for electroplating solution, the current waveform parameters output by the pulse electroplating power supply have large influence on the quality of a gold-plated layer, so the quality of the current waveform output by the pulse electroplating power supply directly determines the quality of the gold-plated layer. At present, most of the existing pulse electroplating power supplies are applied to high-power and high-current gold electroplating, the current precision is not high, and the minimum current precision can only reach nearly one hundred milliamperes; the pulse waveform of any combination form and any pulse current amplitude can not be generated; the pulse current waveform has obvious problems of overshoot, ringing and the like when reaching the peak value, and the requirement of precise electroplating of parts is difficult to meet.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems that the pulse current precision generated by the existing pulse electroplating power supply is not high, the pulse mode is single or the pulse current waveform is unstable, the utility model provides a low-power high-precision pulse electroplating power supply which solves the problems.
The utility model discloses a following technical scheme realizes:
a low-power high-precision pulse electroplating power supply comprises a controller, a driving circuit, a voltage regulating circuit and a forward and reverse pulse generating circuit;
the controller is connected with the driving circuit, transmits a control signal to the driving circuit, controls the driving circuit to generate a driving signal and transmits the generated driving signal to the voltage regulating circuit and the forward and reverse pulse generating circuit, an output voltage signal of the voltage regulating circuit is used as an input signal of the forward and reverse pulse generating circuit, and the forward and reverse pulse generating circuit generates pulse current.
Preferably, the utility model discloses a voltage regulating circuit adopts direct current voltage input, adjusts the voltage at energy storage capacitor both ends through control MOSFET's open/close, the voltage at energy storage capacitor both ends is the input voltage of positive reverse pulse production circuit.
Preferably, the voltage regulating circuit of the present invention comprises a dc power supply, a MOSFET Q1 and an energy storage capacitor C33;
the output end of the direct current power supply is connected with the drain electrode of the MOSFET Q1 through a resistor R26, the gate electrode of the MOSFET Q1 is connected with a Drive _ Q1 driving signal, the source electrode of the MOSFET Q1 is connected with one end of the energy storage capacitor C33, and the other end of the energy storage capacitor C33 is grounded; and the common connection end of the source of the MOSFET Q1 and the energy storage capacitor C33 is used as the output end of the voltage regulating circuit, and a voltage signal is output as the input voltage of the forward and reverse pulse generating circuit.
Preferably, the utility model discloses a forward and reverse pulse generating circuit adopts the bridge type MOSFET control circuit who comprises 4 MOSFET, through controlling 4 MOSFET's on/off, forward and reverse pulse generating circuit can produce forward monopulse, forward group pulse, reverse monopulse, reverse group pulse and forward and reverse group pulse.
Preferably, the forward and reverse pulse generating circuit of the present invention comprises a MOSFET Q2, a MOSFET Q3, a MOSFET Q4 and a MOSFET Q5;
wherein, the drain of the MOSFET Q2 inputs a voltage signal, the gate of the MOSFET Q2 is connected with a Drive _ Q2 driving signal, the source of the MOSFET Q3 is connected with the drain of the MOSFET Q3 and the anode of the electroplating workpiece, the gate of the MOSFET Q3 is connected with a Drive _ Q3 driving signal, and the source of the MOSFET Q3 is grounded;
the drain electrode of the MOSFET Q4 is inputted with a voltage signal, the gate electrode of the MOSFET Q4 is connected with a Drive _ Q4 driving signal, the source electrode of the MOSFET Q4 is connected with the drain electrode of the MOSFET Q5 and the cathode electrode of the electroplating workpiece, the gate electrode of the MOSFET Q5 is connected with a Drive _ Q5 driving signal, and the source electrode of the MOSFET Q5 is grounded.
Preferably, a protector F1 and a current sensor are arranged between the MOSFET Q2 and the MOSFET Q3, and between the MOSFET Q4 and the MOSFET Q5; the current sensor is used for detecting the pulse current generated by the forward and reverse pulse generating circuit.
Preferably, the driving circuit of the present invention comprises an optical coupling isolation chip and an isolated gate driver;
the drive signal output by the controller firstly passes through the optical coupling isolation chip to realize digital-analog isolation and then is input to the isolation type grid driver, and the isolation type grid driver outputs MOSFET grid drive current signals, so that the drive capability of the MOSFET is enhanced, and the MOSFET on/off is accurately controlled.
Preferably, the utility model also comprises a current detection circuit;
the current detection circuit comprises a high-speed voltage signal amplifier AD8021 and a high-precision analog-to-digital conversion chip AD 7985;
pulse current generated by the forward and reverse pulse generating circuit flows through a current sensor, a voltage signal output by the current sensor is input to the AD8021 for isolation and amplification after RC filtering, and the voltage signal is input to the AD7985 for analog-to-digital conversion and then fed back to the controller.
Preferably, the utility model also comprises an MCU module and a man-machine interaction module;
and the human-computer interaction module issues the set control parameters to the controller through the MCU module.
The utility model discloses have following advantage and beneficial effect:
1. the utility model provides a pulse electroplating power output's pulse current wave form is stable, when reaching peak current, does not have obvious overshoot, ringing.
2. The utility model provides a pulse of pulse electroplating power exportable arbitrary mode, for example forward monopulse, forward burst pulse etc. and pulse amplitude is adjustable wantonly.
3. The utility model provides a pulse current precision of pulse electroplating power output is high, still can be within 10mA with current accuracy control when pulse waveform's maximum peak current reaches 20A, can effectively satisfy the anticorrosive technical requirement of high quality gilding of a plurality of precisions plated.
4. The utility model provides a pulse electroplating power supply wide application range except being applied to electroplating power supply technical field, still can be used to in products such as other any power or signal generator that need produce the pulse.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic block diagram of an electroplating power supply according to the present invention.
Fig. 2 is a schematic diagram of the voltage regulating circuit of the present invention.
Fig. 3 is a schematic diagram of a pulse generating circuit according to the present invention.
Fig. 4 is a schematic diagram of a MOSFET driving circuit according to the present invention.
Fig. 5 is a schematic diagram of the current detection circuit of the present invention.
Detailed Description
Hereinafter, the terms "include" or "may include" used in various embodiments of the present invention indicate the existence of the functions, operations or elements of the present invention, and do not limit the addition of one or more functions, operations or elements. Furthermore, as used in various embodiments of the present invention, the terms "comprises," "comprising," "includes," "including," "has," "having" and their derivatives are intended to refer only to the particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be construed as first excluding the existence of, or adding to, one or more other features, numbers, steps, operations, elements, components, or combination of the foregoing.
In various embodiments of the present invention, the expression "or" at least one of a or/and B "includes any or all combinations of the words listed simultaneously. For example, the expression "a or B" or "at least one of a or/and B" may include a, may include B, or may include both a and B.
Expressions (such as "first", "second", and the like) used in various embodiments of the present invention may modify various constituent elements in various embodiments, but may not limit the respective constituent elements. For example, the above description does not limit the order and/or importance of the elements described. The foregoing description is for the purpose of distinguishing one element from another. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of various embodiments of the present invention.
It should be noted that: if it is described that one constituent element is "connected" to another constituent element, the first constituent element may be directly connected to the second constituent element, and a third constituent element may be "connected" between the first constituent element and the second constituent element. In contrast, when one constituent element is "directly connected" to another constituent element, it is understood that there is no third constituent element between the first constituent element and the second constituent element.
The terminology used in the various embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the invention. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of the present invention belong. The terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning that is consistent with their contextual meaning in the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein in various embodiments of the present invention.
To make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the following examples and drawings, and the exemplary embodiments and descriptions thereof of the present invention are only used for explaining the present invention, and are not intended as limitations of the present invention.
Examples
In order to obtain a high-quality gold-plated layer with good compactness, uniform thickness and low porosity, the embodiment provides a low-power high-precision pulse electroplating power supply.
Specifically, as shown in fig. 1, the electroplating power supply provided by this embodiment mainly includes a human-computer interaction module, an MCU module (C8051F040), a controller (FPGA, EP4CE75F23I7), a forward-reverse voltage regulating circuit, and a forward-reverse pulse generating circuit. The controller of the embodiment is used as a controller to generate a driving signal by controlling the driving circuit, and transmits the driving signal to the voltage regulating circuit and the forward and reverse pulse generating circuit, the voltage signal output by the voltage regulating circuit is used as an input signal of the forward and reverse pulse generating circuit, and the forward and reverse pulse generating circuit generates a pulse current, so that a stable pulse current is generated.
The voltage regulating circuit of this embodiment adopts direct current voltage input, adjusts the voltage at energy storage capacitor both ends through the ON/OFF of control MOSFET, because the voltage at this energy storage capacitor both ends is the input voltage of positive reverse pulse generating circuit to through adjusting the voltage at energy storage capacitor both ends can realize just reversing the pulse current that the pulse generating circuit produced and carry out effective control.
The pulse power supply of the embodiment sets a pulse mode and pulse parameters through a human-computer interaction module (the human-computer interaction module of the embodiment adopts a touch screen), the parameters are automatically transmitted to an MCU module after being confirmed, the MCU control module receives and analyzes the parameters and then transmits the parameters to a controller, and the controller receives the pulse control parameters and then collects forward and reverse currents and voltages, generates forward and reverse pulses and controls the constant current of the forward and reverse pulse currents to realize the stable output of pulse waveforms in various modes.
The electroplating power supply of the embodiment has a plurality of pulse output modes, and the step of controlling the ordered switches of the bridge type MOSFET circuit by the controller to generate a plurality of pulse waveforms comprises the following steps: direct current, positive single pulse, positive burst pulse, positive and negative alternate pulse, combined pulse, and can realize that positive pulse and negative pulse amplitude are arbitrarily adjustable.
The principle of the forward and reverse voltage regulating circuit of the present embodiment is similar, and the present embodiment takes forward voltage regulation as an example (the reverse voltage regulating circuit and the forward voltage regulating circuit have the same structure), specifically, as shown in fig. 2, the voltage regulating circuit of the present embodiment includes a DC power supply DC, a MOSFET Q1 and an energy storage capacitor C33;
the output end of the direct current power supply DC is connected with the drain electrode of a MOSFET Q1 through a resistor R26, the gate electrode of the MOSFET Q1 is connected with a Drive _ Q1 Drive signal, the source electrode of the MOSFET Q1 is connected with one end of an energy storage capacitor C33, and the other end of the energy storage capacitor C33 is grounded; the common connection end of the source of the MOSFET Q1 and the energy storage capacitor C33 is used as the output end of the voltage regulating circuit, and the output voltage signal is used as the input voltage of the forward and reverse pulse generating circuit.
In the embodiment, a non-isolated DC-DC conversion technology is adopted, 24V direct current power supply is input, the on/off of the MOSFET Q1 is controlled through a dynamic duty ratio adjusting algorithm to adjust the voltage at two ends of the energy storage capacitor C22, and the voltage of the energy storage capacitor C22 is input voltage of pulse output, so that the current in the circuit can be effectively controlled by adjusting the voltage.
The embodiment increases the charging time of the energy storage capacitor by serially connecting a resistor R26 between the DC power supply DC and the MOSFET Q1 so as to reduce the difficulty of voltage regulation.
Diodes D1 and D3 in fig. 2 are mainly isolated reverse current protection power supplies, D2 is mainly a protection MOSFET Q1, R22 mainly plays a role of current limiting in a bleeder channel, R23 and R24 are voltage feedbacks, and R25 and C32 play a role of filtering.
In the embodiment, a non-isolated DC-DC conversion technology is adopted on hardware, a resistor is connected in series at an input end, and a low ESR capacitor (a large-capacitance electrolytic capacitor and a ceramic capacitor) is connected in parallel at a load end to prolong the charging time of an energy storage capacitor; the software adopts a self-adaptive dynamic duty ratio regulation algorithm and a constant voltage and constant current control strategy when no pulse waveform is generated, so that the current and voltage regulation and control are realized when no pulse is generated, and the pulse fluctuation caused by voltage regulation is eliminated.
In order to obtain a high-quality gold-plated layer, it is necessary to generate pulses of different forms during actual processing, and the forward/reverse pulse generating circuit of the present embodiment employs a bridge MOSFET control circuit capable of generating a forward single pulse, a forward group pulse, and a forward group pulse, as shown in fig. 3.
The pulse generating circuit of the present embodiment includes a MOSFET Q2, a MOSFET Q3, a MOSFET Q4, and a MOSFET Q5;
wherein, the drain electrode of the MOSFET Q2 inputs a voltage signal, the gate electrode of the MOSFET Q2 is connected with a Drive _ Q2 driving signal, the source electrode of the MOSFET Q3 is connected with the drain electrode of the MOSFET Q3 and the anode of the electroplating workpiece, the gate electrode of the MOSFET Q3 is connected with a Drive _ Q3 driving signal, and the source electrode of the MOSFET Q3 is grounded;
the drain of the MOSFET Q4 is inputted with a voltage signal, the gate of the MOSFET Q4 is connected with a Drive _ Q4 driving signal, the source of the MOSFET Q4 is connected with the drain of the MOSFET Q5 and the cathode of the electroplating workpiece, the gate of the MOSFET Q5 is connected with a Drive _ Q5 driving signal, and the source of the MOSFET Q5 is grounded.
The working principle of the pulse generating circuit of the embodiment is as follows:
in the electroplating process, when positive single pulse or group pulse is required to be generated, the MOSFET Q5 is kept normally open, and meanwhile, chopping of an input signal is realized through the periodic switch MOSFET Q2, so that positive current flows through an electroplating workpiece in a pulse form, and thus the periodic positive pulse is generated; similarly, when reverse pulse is required to be generated, the MOSFET Q3 is kept normally open, chopping is realized by periodically switching the MOSFET Q4, so that reverse current flows through the electroplating workpiece in a pulse mode, and the reverse pulse is generated; when the forward and reverse group pulses need to be generated alternately, the Q3 or the Q5 is kept normally open, and then the Q2 and the Q4 are switched alternately in sequence, so that the forward and reverse alternate pulse output can be realized.
Accurate control MOSFET's switch is the key that realizes impulse current's invariable control and production pulse, and MOSFET drive control in the whole power is realized through drive circuit to this embodiment, and a total 6 MOSFET drive circuit of whole pulse electroplating power, and each drive circuit's drive principle is the same with the components and parts of choosing for use all. Taking the driving MOSFET Q1 as an example, a driving circuit schematic diagram of the MOSFET Q1 shown in fig. 4 is shown. In the circuit design, a driving signal output by a controller (FPGA) firstly passes through an optical coupling isolation chip 6N137 to realize analog-digital isolation, and then is input into an isolation type grid driver TCC421 so as to effectively improve grid driving current, enhance the driving capability of the MOSFET and finally realize accurate control on the on and off of the MOFET.
In order to realize fast and high-precision acquisition of current and voltage signals of a pulse power supply system, a current detection circuit is adopted in the embodiment to realize feedback of signals such as pulse current generated by a power supply to a controller, and specifically, as shown in fig. 5, a high-speed voltage signal amplifier AD8021 and a high-precision analog-to-digital conversion chip AD7985 are adopted in the current detection circuit in the embodiment. The AD8021 is a high-performance and high-speed voltage feedback amplifier, and the AD7985 is a successive approximation type analog-to-digital converter which is rapid, low in power consumption, single in power supply, precise in 16 bits and 2.5MSPS (maximum throughput rate). When the system generates pulses, pulse current flows through the inductive Hall sensor, a voltage signal output by the sensor is input into an AD8021 after being subjected to RC filtering, and after isolation and amplification, the voltage signal is input into an AD7985 chip for analog-to-digital conversion and finally fed back to be input into the controller.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above description is only the embodiments of the present invention, and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (9)

1. A low-power high-precision pulse electroplating power supply is characterized by comprising a controller, a driving circuit, a voltage regulating circuit and a forward and reverse pulse generating circuit;
the controller is connected with the driving circuit, transmits a control signal to the driving circuit, controls the driving circuit to generate a driving signal and transmits the generated driving signal to the voltage regulating circuit and the forward and reverse pulse generating circuit, a voltage signal output by the voltage regulating circuit is used as an input signal of the forward and reverse pulse generating circuit, and the forward and reverse pulse generating circuit generates pulse current.
2. The low-power high-precision pulse electroplating power supply according to claim 1, wherein the voltage regulating circuit adopts a direct-current voltage input, the voltage at two ends of the energy storage capacitor is regulated by controlling the on/off of the MOSFET, and the voltage at two ends of the energy storage capacitor is used as the input voltage of the forward and reverse pulse generating circuit.
3. The small-power high-precision pulse plating power supply according to claim 2, wherein the voltage regulating circuit comprises a direct current power supply, a MOSFET Q1 and an energy storage capacitor C33;
the output end of the direct current power supply is connected with the drain electrode of the MOSFET Q1 through a resistor R26, the gate electrode of the MOSFET Q1 is connected with a Drive _ Q1 driving signal, the source electrode of the MOSFET Q1 is connected with one end of the energy storage capacitor C33, and the other end of the energy storage capacitor C33 is grounded; and the common connection end of the source of the MOSFET Q1 and the energy storage capacitor C33 is used as the output end of the voltage regulating circuit, and a voltage signal is output as the input voltage of the forward and reverse pulse generating circuit.
4. The low-power high-precision pulse plating power supply according to claim 1, wherein the forward and reverse pulse generating circuit employs a bridge type MOSFET control circuit composed of 4 MOSFETs, and by controlling the ON/OFF of the 4 MOSFETs, the forward and reverse pulse generating circuit can generate a forward single pulse, a forward group pulse, a reverse single pulse, a reverse group pulse and a forward and reverse group pulse.
5. The small-power high-precision pulse plating power supply according to claim 4, wherein the forward and reverse pulse generating circuit comprises a MOSFET Q2, a MOSFET Q3, a MOSFET Q4 and a MOSFET Q5;
wherein, the drain of the MOSFET Q2 inputs a voltage signal, the gate of the MOSFET Q2 is connected with a Drive _ Q2 driving signal, the source of the MOSFET Q3 is connected with the drain of the MOSFET Q3 and the anode of the electroplating workpiece, the gate of the MOSFET Q3 is connected with a Drive _ Q3 driving signal, and the source of the MOSFET Q3 is grounded;
the drain of the MOSFET Q4 inputs a voltage signal, the gate of the MOSFET Q4 is connected with a Drive _ Q4 driving signal, the source of the MOSFET Q4 is connected with the drain of the MOSFET Q5 and the cathode of a plating workpiece, the gate of the MOSFET Q5 is connected with a Drive _ Q5 driving signal, and the source of the MOSFET Q5 is grounded.
6. The small-power high-precision pulse plating power supply according to claim 5, wherein a protector F1 and a current sensor are arranged between the MOSFET Q2 and the MOSFET Q3, and between the MOSFET Q4 and the MOSFET Q5; the current sensor is used for detecting the pulse current generated by the forward and reverse pulse generating circuit.
7. The small-power high-precision pulse plating power supply according to claim 1, wherein the driving circuit comprises an optical coupling isolation chip and an isolated gate driver;
the drive signal output by the controller firstly passes through the optical coupling isolation chip to realize digital-analog isolation and then is input to the isolation type grid driver, and the isolation type grid driver outputs MOSFET grid drive current signals, so that the drive capability of the MOSFET is enhanced, and the on/off of the MOSFET is accurately controlled.
8. The low-power high-precision pulse plating power supply according to claim 1, further comprising a current detection circuit;
the current detection circuit comprises a high-speed voltage signal amplifier AD8021 and a high-precision analog-to-digital conversion chip AD 7985;
pulse current generated by the forward and reverse pulse generating circuit flows through a current sensor, a voltage signal output by the current sensor is input to the AD8021 for isolation and amplification after RC filtering, and the voltage signal is input to the AD7985 for analog-to-digital conversion and then fed back to the controller.
9. The small-power high-precision pulse electroplating power supply according to claim 1, further comprising an MCU module and a human-computer interaction module;
and the human-computer interaction module issues the set control parameters to the controller through the MCU module.
CN202121138777.6U 2021-05-25 2021-05-25 Low-power high-precision pulse electroplating power supply Active CN214756107U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113179042A (en) * 2021-05-25 2021-07-27 中国工程物理研究院机械制造工艺研究所 Low-power high-precision pulse electroplating power supply

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113179042A (en) * 2021-05-25 2021-07-27 中国工程物理研究院机械制造工艺研究所 Low-power high-precision pulse electroplating power supply

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