CN214672576U

CN214672576U - Module packaging structure of radio frequency front-end device

Info

Publication number: CN214672576U
Application number: CN202120412263.9U
Authority: CN
Inventors: 姜峰; 卢昕颖; 张晓东
Original assignee: Xiamen Yun Tian Semiconductor Technology Co ltd
Current assignee: Xiamen Yun Tian Semiconductor Technology Co ltd
Priority date: 2021-02-24
Filing date: 2021-02-24
Publication date: 2021-11-09
Anticipated expiration: 2031-02-24

Abstract

A module packaging structure of a radio frequency front-end device comprises at least two different chips, a glass substrate, an encapsulation structure and a wiring structure, wherein the chips are provided with a first surface and a second surface, and the first surface is provided with a bonding pad; the first surface of the glass substrate is attached to the first surface of the chip through the thin film layer, and the glass substrate and the thin film layer are respectively provided with a first through hole communicated to the bonding pad; the encapsulation structure encapsulates the second surface and the side surface of the chip and the side surfaces of the glass substrate and the thin film layer; the wiring structure covers the second surface of the glass substrate and extends to the first through hole to be electrically connected with the bonding pad. The utility model discloses can realize the integration of multiple chip, solve product warpage problem and lead to the opening to match unusual such as difference because of the pad material is different, improve product yield and reliability, and realize frivolous short and small encapsulation, promote the space rate.

Description

Module packaging structure of radio frequency front-end device

Technical Field

The utility model relates to a semiconductor package field, especially a module packaging structure of radio frequency front end device.

Background

As the demand for various electronic devices and passive electronic devices increases, mobile consumer customers need to achieve device miniaturization and higher integration. Therefore, the integration degree of the electronic device is higher and higher, and System-in-Package (SiP) is applied to different fields more and more. The system-in-package has the advantage that multiple heterogeneous chips or devices, such as active and passive devices or chips, MEMS or optical devices, etc., can be integrally assembled together to form a single package body with a specific function, thereby forming a system or subsystem.

The current integration mode is to integrate the earlier packaged device or other packaged heterogeneous chips into a package body by a secondary packaging method, so as to achieve the purpose of high integration. The traditional method has the advantages of high cost, multiple processes, limited precision and larger volume. The fan-out package belongs to an advanced package technology, and because the fan-out package does not need an Interposer (Interposer), a filler (Underfill) and a wire, and omits processes such as die bonding, wire bonding and the like, mostly adopts a Redistribution (Redistribution) and bump (Bumping) technology on the surface or the back of a chip as an I/O wiring means, thereby gradually occupying the market position.

Although fan-out packages have many advantages, such as flexible design, better electrical and thermal performance, high frequency applications, high density wiring and lower cost, the wafer warpage present in them affects the subsequent process and is prone to cause chipping; RDL circuit manufacturing is carried out through a conventional PI process and an electroplating process, and the line width and the line distance are large; and the cost is high.

SUMMERY OF THE UTILITY MODEL

The utility model discloses an among the main aim at overcome prior art, wafer warpage that multi-chip package exists just causes piece, technology complicacy to the influence of follow-up technology easily, defect with high costs provides a module packaging structure of radio frequency front end device.

The utility model adopts the following technical scheme:

the utility model provides a module packaging structure of radio frequency front end device, includes two kinds of different chips at least, and the chip is equipped with first surface and second surface, and the first surface is equipped with pad, its characterized in that: the packaging structure also comprises a glass substrate, an encapsulation structure and a wiring structure; the first surface of the glass substrate is attached to the first surface of the chip through the thin film layer, and the glass substrate and the thin film layer are respectively provided with a first through hole communicated to the bonding pad; the encapsulation structure encapsulates the second surface and the side surface of the chip and the side surfaces of the glass substrate and the thin film layer; the wiring structure covers the second surface of the glass substrate and extends to the first through hole to be electrically connected with the bonding pad.

Preferably, the chip is a filter chip, a power amplifier chip or a low noise amplifier.

Preferably, the chip is a filter chip, the first surface of the chip is further provided with a functional region, and the thin film layer is provided with a second through hole at the position of the functional region.

Preferably, the wiring structure comprises a metal wiring layer and a plurality of signal ports; the metal wiring layer covers the second surface of the glass substrate, extends to the first through hole and is electrically connected with the bonding pad, and is also provided with a plurality of external connection areas; the signal port is electrically connected with the external connection area.

Preferably, the wiring structure further comprises a passivation layer, the passivation layer covers the surface of the metal wiring layer and the exposed area of the second surface of the glass substrate, a third through hole is formed in the exposed area, and the signal port is arranged at the third through hole.

Preferably, the signal port is a nickel-palladium-gold, nickel-gold, titanium-copper bonding pad or a BGA solder ball.

Preferably, the passivation layer is made of polyimide photoresist or polyimide dry film.

Preferably, the thickness of the encapsulation structure to the chip is 20um-100 um.

Preferably, the encapsulation structure adopts EMC or molding dry film.

Preferably, the film layer can adopt epoxy resin photoresist, epoxy resin dry film, polyimide photoresist or polyimide dry film.

From the above description of the present invention, compared with the prior art, the present invention has the following advantages:

1. the utility model discloses a structure uses the glass substrate to regard as the support plate simultaneously can regard as the passivation layer again, carries out the module piece encapsulation through the flip-chip mode with the different devices of radio frequency anterior segment, can realize the integration of multiple heterogeneous chip, solve product warpage problem and lead to the opening to match unusual such as difference because of the pad material difference, improves product yield and reliability, and realizes frivolous short and small encapsulation, promotes the space rate.

2. The utility model discloses a structure, its chip can be for wave filter chip, power amplifier chip or low noise amplifier etc. to the chip that has the functional area, the functional area of chip is protected to accessible glass substrate and thin layer vacuole formation, and the IDT protection cover plate of SAW device still can be regarded as to glass substrate promptly.

3. The utility model discloses a structure, in the second surface preparation wiring layer one side of glass substrate, relative plastic envelope reconstruction surface, its surfacing, warpage are little, are favorable to the preparation of meticulous circuit.

4. The utility model discloses a structure utilizes the electrically conductive through-hole of glass substrate, metal wiring layer etc. to form fan-out type chip package structure, can carry out synchronous encapsulation with the device of multiple different substrates, has left out TSV and has punched, technology such as interim bonding makes cost greatly reduced, has solved the problem that traditional SAW-WLP lobe of a leaf problem and module integration length-consuming time.

Drawings

FIG. 1 is a view of the structure of the present invention;

FIG. 2 is a first process flow diagram of the present invention;

FIG. 3 is a second process flow diagram (for making wiring structure) of the present invention;

wherein: 10. chip, 11, bonding pad, 12, functional region, 20, glass substrate, 21, first through hole, 22, cavity, 30, encapsulation structure, 40, wiring structure, 41, metal wiring layer, 42, signal port, 43, passivation layer, 44, third through hole, 50, thin film layer, 51, second through hole.

Detailed Description

The present invention will be further described with reference to the following detailed description.

The terms "first", "second", and the like in the present invention are used for convenience of description only to distinguish different constituent elements having the same name, and do not indicate a sequential or primary-secondary relationship.

In the description of the present invention, the directions or positional relationships indicated by "up", "down", "left", "right", "front", and "rear" are used as the directions or positional relationships indicated by the drawings, and are only for convenience of description of the present invention, and it is not intended to indicate or imply that the device indicated must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the scope of the present invention.

Referring to fig. 1, a module packaging structure of a radio frequency front end device includes at least two different chips 10, where the chip 10 is provided with a first surface and a second surface, and the first surface is provided with a pad 11; further comprises a glass substrate 20, an encapsulation structure 30 and a wiring structure 40; the first surface of the glass substrate 20 is attached to the first surface of the chip 10 through the thin film layer 50, and the glass substrate 20 and the thin film layer 50 are respectively provided with a first through hole 21 communicated to the bonding pad 11; the encapsulation structure 30 encapsulates the second surface and the side surfaces of the chip 10 and the side surfaces of the glass substrate 20 and the thin film layer 50; the wiring structure 40 covers the second surface of the glass substrate 20, and extends to the first via 21 to electrically connect with the pad 11.

In the present invention, the chips 10 may be horizontally spaced apart, with a gap between adjacent chips 10. The chips 10 may be filter chips, power amplifier chips, or low noise amplifiers, and the like, the sizes of the chips 10 may be the same or different, and the specific chip combination may be designed according to the requirements of the rf front-end device module, without limitation.

In practical applications, if one of the chips 10 is a filter chip, the first surface of the chip is further provided with a functional region 12, and the functional region 12 needs a cavity for protection, so that the thin film layer 50 is provided with a second through hole 51 at the position of the functional region 12, and a cavity 22 is defined at the functional region 12 by the glass substrate 20 and the thin film layer 50.

Referring to fig. 2, the first through holes 21 in the glass substrate 20 correspond to the first through holes 21 of the thin film layer 50, and the diameters thereof may be the same or different, and preferably, the diameter of the first through holes 21 of the glass substrate 20 is greater than or equal to the diameter of the first through holes 21 of the thin film layer 50. The first through hole 21 of the glass substrate 20 may be formed by laser drilling and HF etching, and the first through hole 21 of the thin film layer 50 may be formed by a photolithography process. The thin film layer 50 may be an epoxy photoresist, an epoxy dry film, a polyimide photoresist, a polyimide dry film, or the like.

Further, referring to fig. 3, the wiring structure 40 includes a metal wiring layer 41 and a plurality of signal ports 42; the metal wiring layer 41 covers the second surface of the glass substrate 20, extends to the first through hole 21 and is electrically connected with the bonding pad 11, and is further provided with a plurality of external connection areas; the signal port 42 is electrically connected to the external connection region.

The utility model discloses in, the quantity of metal wiring layer 41 can be the one deck, and two-layer, three-layer are more even to satisfy different wiring demands. The metal wiring layer 41 may be formed by electroplating, photoresist stripping, etching, and the like, and the pattern thereof is designed according to the specific wiring line of the rf front-end device module, without limitation. The signal port 42 may be a nickel-palladium-gold, nickel-gold, titanium-copper pad, or BGA solder ball, etc.

In addition, in order to protect the metal wiring layer 41, the wiring structure 40 further includes a passivation layer 43, and the passivation layer 43 covers the surface of the metal wiring layer 41 and the exposed area of the second surface of the glass substrate 20, and is provided with a third through hole 43 at the external connection area. The signal port 42 is provided at the third through hole 43. The passivation layer 43 can prevent the metal wiring layer 41 from being oxidized, the number of the passivation layer 43 can be set according to the number of the metal wiring layer 41, and the passivation layer 43 adopts polyimide photoresist, polyimide dry film and the like.

Furthermore, the encapsulation structure 30 can be manufactured by a plastic package process, and the material can be EMC, molding dry film, or the like. The encapsulation structure 30 can plastically encapsulate the exposed surface of the chip 10, where the exposed surface includes the second surface of the chip 10 and a side surface, and the side surface is a surface connecting the first surface and the second surface. Meanwhile, the encapsulation structure 30 also encapsulates the thin film layer 50 and the side surface of the glass substrate 20.

Further, after the encapsulation structure 30 is manufactured by using a plastic package process, the encapsulation structure 30 at the second surface of the chip 10 needs to be thinned to reduce the overall volume, and after the thinning, the thickness from the surface of the encapsulation structure 30 to the second surface of the chip 10 is 20um to 100um, as shown in fig. 1.

The utility model discloses in, regard as glass apron or passivation layer structure with glass substrate 20, and laminate with two at least chips 10 (different functional device such as wave filter, PA, LNA), recycle and envelope structure 30 and carry out the plastic envelope, solve product warpage problem and lead to the opening to match unusual such as difference because of the pad material is different, improve product yield and reliability.

The above-mentioned be the utility model discloses a concrete implementation way, nevertheless the utility model discloses a design concept is not limited to this, and the ordinary use of this design is right the utility model discloses carry out immaterial change, all should belong to the act of infringement the protection scope of the utility model.

Claims

1. The utility model provides a module packaging structure of radio frequency front end device, includes two kinds of different chips at least, and the chip is equipped with first surface and second surface, and the first surface is equipped with pad, its characterized in that: the packaging structure also comprises a glass substrate, an encapsulation structure and a wiring structure; the first surface of the glass substrate is attached to the first surface of the chip through the thin film layer, and the glass substrate and the thin film layer are respectively provided with a first through hole communicated to the bonding pad; the encapsulation structure encapsulates the second surface and the side surface of the chip and the side surfaces of the glass substrate and the thin film layer; the wiring structure covers the second surface of the glass substrate and extends to the first through hole to be electrically connected with the bonding pad.

2. The module package structure of a rf front-end device according to claim 1, wherein: the chip is a filter chip, a power amplifier chip or a low noise amplifier.

3. The module package structure of a rf front-end device according to claim 1, wherein: the chip is a filter chip, the first surface of the chip is also provided with a functional area, and the thin film layer is provided with a second through hole at the position of the functional area.

4. The module package structure of a rf front-end device according to claim 1, wherein: the wiring structure comprises a metal wiring layer and a plurality of signal ports; the metal wiring layer covers the second surface of the glass substrate, extends to the first through hole and is electrically connected with the bonding pad, and is also provided with a plurality of external connection areas; the signal port is electrically connected with the external connection area.

5. The module package structure of the rf front-end device according to claim 4, wherein: the wiring structure further comprises a passivation layer, the passivation layer covers the surface of the metal wiring layer and the exposed area of the second surface of the glass substrate, a third through hole is formed in the exposed area, and the signal port is arranged at the third through hole.

6. The module package structure of the rf front-end device according to claim 4, wherein: the signal port is a nickel-palladium-gold, nickel-gold, titanium-copper bonding pad or a BGA solder ball.

7. The module package structure of an rf front-end device according to claim 5, wherein: the passivation layer is made of polyimide photoresist or a polyimide dry film.

8. The module package structure of a rf front-end device according to claim 1, wherein: the thickness from the surface of the encapsulation structure to the second surface of the chip is 20um-100 um.

9. The module package structure of a rf front-end device according to claim 1, wherein: the packaging structure adopts EMC or molding dry film.

10. The module package structure of a rf front-end device according to claim 1, wherein: the thin film layer is made of epoxy resin photoresist, an epoxy resin dry film, polyimide photoresist or a polyimide dry film.