CN214670074U

CN214670074U - Photo-etching mask plate and imaging device for graphical direct display light distribution

Info

Publication number: CN214670074U
Application number: CN202121108392.5U
Authority: CN
Inventors: 王峰; 赵海琴
Original assignee: Mecron Semiconductor Suzhou Co ltd
Current assignee: Mecron Semiconductor Suzhou Co ltd
Priority date: 2021-05-24
Filing date: 2021-05-24
Publication date: 2021-11-09
Anticipated expiration: 2031-05-24

Abstract

The utility model discloses a photoetching mask plate and an imaging device for graphical direct display light distribution, which comprises a mask plate substrate, wherein a graphical display layer and a display control layer are arranged on the mask plate substrate, the graphical display layer comprises Micro UV LED chips arranged in an array, and the Micro UV LED chips form a display screen; the display control layer comprises a control circuit connected with each Micro UV LED chip, and the control circuit is used for controlling the on-off of each Micro UV LED chip so that the graphic display layer forms different mask pattern light paths. The photoetching mask is provided with the Micro UV LED chip array, the mask graph is directly displayed through the Micro UV LED chip array, the mask is a UV light-emitting source, the optical diffraction effect does not exist, and the optical diffraction phenomenon caused by the traditional mask under the condition that the width of the mask is reduced on line is avoided.

Description

Photo-etching mask plate and imaging device for graphical direct display light distribution

Technical Field

The utility model belongs to the technical field of the photoetching mask version, specifically relate to a photoetching mask version and image device of graphical direct display light distribution.

Background

The semiconductor photoetching mask is an indispensable device structure manufacturing tool in the semiconductor chip structure manufacturing process, the whole semiconductor chip structure is manufactured through an image mask, and the photoetching mask is a high-precision image transfer tool and plays a role in connection between a structural layer and a structural layer in a chip process. At present, the traditional mask mainly uses transparent quartz glass or soda glass as a substrate, a metal Cr layer evaporated by magnetron sputtering is used as a mask body material on the substrate, a master pattern is manufactured by a laser direct writing mode, and a sub-mask is manufactured by copying the master pattern through photoetching, developing, etching and other semiconductor processes, wherein the master and the sub-mask are called as the mask. Each mask in traditional masks corresponds to a mask pattern, the mask pattern is made along with the mask, the pattern is fixed and unchangeable, in the chip process technology, along with the change of chip structure, the used mask of different patterns also can increase, every photoetching process that involves, the mask that all will be changed once, the alignment error between the multiple photoetching processes also can superpose thereupon, the alignment process is more, and the error is just bigger. Traditional mask is through UV light source illumination realization cloth light on mask, and along with diminishing of mask figure linewidth size, the diffraction effect can appear in the UV light that sees through mask to influence wafer imaging.

For example, the utility model with publication number CN 105549319 a discloses a mask plate, which has a pattern control layer, wherein the pattern control layer comprises light transmission units and a control circuit connected with each light transmission unit; the control circuit is connected with each light-transmitting unit and used for controlling each light-transmitting unit to be switched between a light-transmitting state and a light-tight state so as to form different mask patterns. The method can control each light-transmitting unit through the control circuit, so that the mask can provide different mask patterns. However, when the mask is used for manufacturing a structure of a semiconductor chip, light distribution is still required to be achieved by irradiating the mask with a UV light source, and as the line width of a mask pattern becomes smaller, the UV light penetrating through the mask still has a diffraction effect, so that the wafer imaging effect is influenced.

SUMMERY OF THE UTILITY MODEL

To the technical problem that exists, the utility model aims at providing a photoetching mask version and image device of graphical direct display light, this photoetching mask version sets up Micro UV LED chip array, directly shows the mask figure through Micro UV LED chip array, and this mask version itself is exactly a UV light emitting source, does not have the optical diffraction effect, has avoided the optical diffraction phenomenon that traditional mask version arouses under the condition that the line width diminishes.

The technical scheme of the utility model is that:

a photo-etching mask plate for graphical direct display light distribution comprises a mask plate substrate, wherein a graphical display layer and a display control layer are arranged on the mask plate substrate, the graphical display layer comprises Micro UV LED chips arranged in an array, and the Micro UV LED chips form a display screen; the display control layer comprises a control circuit connected with each Micro UV LED chip, and the control circuit is used for controlling the on-off of each Micro UV LED chip so that the graphic display layer forms different mask pattern light paths.

In a preferred technical scheme, the Micro UV LED chip is flip-chip welded on the mask substrate in a mass transfer mode.

In a preferable technical scheme, the display control layer comprises a first insulating layer arranged on the second surface of the mask substrate, a negative electrode circuit layer is arranged on the upper surface of the first insulating layer, a second insulating layer is arranged on the upper surface of the negative electrode circuit layer, a positive electrode circuit layer is arranged on the upper surface of the second insulating layer, a negative electrode welding window is formed in the second insulating layer, the negative electrode of the Micro UV LED chip is connected with the negative electrode circuit layer through the negative electrode welding window, and the positive electrode of the Micro UV LED chip is connected with the positive electrode circuit layer.

In a preferred technical scheme, a UV light limiting layer is arranged on the first surface of the mask substrate.

In the preferred technical scheme, a protective layer is arranged above the Micro UV LED chip and is made of quartz or sapphire crystals.

In the preferred technical scheme, an anti-dazzle photonic crystal nano-structure layer is further arranged on the surface of the protective layer and comprises microlens structures which are arranged in an array mode, the radian range of the microlenses is 0.5-3 rad, and the heights of the microlenses are 150-300 nm.

The utility model also discloses an exposure imaging device, including above-mentioned arbitrary item the photoetching mask version and the projection objective of the direct demonstration cloth light of graphics, through the break-make of each Micro UV LED chip of control circuit control to make the photoetching mask version of the direct demonstration cloth light of graphics form different mask pattern light paths, through the line width size of projection objective adjustment mask pattern light path, realize the exposure formation of image of corresponding chip architecture on the wafer.

Compared with the prior art, the beneficial effects of the utility model are that:

1. this photoetching mask version sets up Micro UV LED chip array, through Micro UV LED chip array direct display mask figure, this mask version itself is exactly a UV luminous source, the luminous of the Micro UV LED chip of arranging through the control array realizes that the graphical directly shows the light distribution function, just as a small-size graphical display, can be according to the change of chip structural layer technology, the mask figure that changes at any time, a mask version corresponds a mask figure in the more traditional mask version has very big difference.

2. The utility model discloses a photoetching mask version need not to change the mask version if involve multichannel photoetching technology in the chip manufacturing process, can only make a round trip to show through a mask version and alternate the chip structure technology processing procedure that the mask figure just can solve complicacy, has improved production efficiency greatly.

3. The utility model relates to a position of mask version is invariable throughout in whole chip processing procedure to the direct display light distribution function of photoetching mask version, and what changed is the mask figure of direct display, has improved the alignment precision of technology greatly to a certain extent under the motionless condition of mask version.

4. The utility model discloses a photoetching mask version has the function of direct display, and mask version itself is exactly a UV light emitting source, does not have the optical diffraction effect, has avoided the optical diffraction phenomenon that traditional mask version arouses under the condition that the line width diminishes. The imaging of the wafer is realized by the imaging light path after the direct display light distribution through the projection objective system, the projection objective system can adjust the line width size of the imaging light path, and finally the exposure imaging of the corresponding chip structure is realized on the wafer. The photoetching mask plate with the graphical direct-display light distribution function, which is prepared by utilizing the Micro UV LED chip, has the characteristics of long service life, quick exposure response time, good light path uniformity and the like, is suitable for large-scale batch production, and can be widely applied to complex semiconductor chip process procedures.

Drawings

The invention will be further described with reference to the following drawings and examples:

FIG. 1 is a schematic structural diagram of a patterned direct-display light-distribution photolithography mask according to the present invention;

FIG. 2 is a schematic view of a microlens structure according to the present invention;

FIG. 3 is a flow chart of the method for preparing a patterned direct-display light-distribution photolithography mask according to the present invention;

fig. 4 is a schematic view of the exposure imaging apparatus according to the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings. It should be understood that the description is intended to be illustrative only and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.

Examples

As shown in fig. 1, a photo-etching mask with patterned direct-display light distribution comprises a mask substrate 2, wherein a graphic display layer and a display control layer are arranged on the mask substrate 2; the graphic display layer comprises Micro UV LED chips 1 arranged in an array, namely ultraviolet Micro LED chips, and the Micro UV LED chips form a display screen; the display control layer comprises a control circuit connected with each Micro UV LED chip 1, and the control circuit is used for controlling the on-off of each Micro UV LED chip 1 so that the graphic display layer forms different mask pattern light paths.

The Micro LED is an LED adopting the technology of Micro and array, and the LED structure design is thinned, miniaturized and arrayed, so that each pixel point can be addressed, the light can be emitted independently, and the pixel distance is reduced from the original millimeter level to the micron level. The Micro UV LED technology is a screen composed of tiny versions of gallium nitride chips, and Micro UV LED displays are manufactured by dicing a wafer into tiny devices and transferring them onto a transistor backplane in a parallel pick and place technique.

The size of the Micro UV LED chips is 1 x 1um to 10 x 10um, the distance between each Micro UV LED chip is not more than 1um, the control circuit controls each Micro UV LED chip 1 to be used as a pixel to be independently lightened and control the luminous intensity of the pixel, and the graphical direct-display light distribution function is realized by controlling the light emission of the Micro UV LED chips 1.

The mask substrate 2 is made of a material with high hardness and high warping resistance, and the mask substrate 2 is made of one of quartz material, soda glass material and sapphire material.

The thickness range of the mask substrate 2 is between 50 and 2000um, and the warping degree is controlled between 0 and 10 um.

Preferably, the mask substrate 2 is made of quartz material, the thickness is 100um, and the warping degree is 5 um.

The photoetching mask plate is like a small graphical display, and the mask graph can be changed at any time according to the change of the chip structure layer process. If a plurality of photoetching processes are involved in the chip manufacturing process, the mask plate does not need to be replaced, the complicated chip structure process can be solved only by changing the mask pattern back and forth through one mask plate, and the production efficiency is greatly improved.

In a preferred embodiment, the Micro UV LED chip 1 is flip-chip bonded to the reticle substrate by bulk transfer. Bulk transfer can be achieved using bulk transfer equipment.

The bulk transfer technique comprises the following steps: picking up the micromold (preform) from a predetermined position with very high spatial precision and orientation; moving the microchips to predetermined positions while maintaining the relative spatial positions and orientations of the microchips; the microchips are then selectively dispensed at the new location while maintaining the new relative position and orientation.

In a preferred embodiment, the specific implementation of the display control layer may be as follows: the display control layer comprises a first insulating layer 6 arranged on a second surface 4 of the mask substrate 2, a negative electrode circuit layer 7 is arranged on the upper surface of the first insulating layer 6, a second insulating layer 8 is arranged on the upper surface of the negative electrode circuit layer 7, a positive electrode circuit layer 9 is arranged on the upper surface of the second insulating layer 8, a negative electrode welding window 10 is formed in the second insulating layer 8, a negative electrode 12 of the Micro UV LED chip 1 is connected with the negative electrode circuit layer 7 through the negative electrode welding window 10, and a positive electrode 14 of the Micro UV LED chip 1 is connected with the positive electrode circuit layer 9.

The first insulating layer 6 is made of one of an aluminum oxide material, a silicon nitride material and a silicon oxide material, and the thickness of the first insulating layer 6 is in a range of 100 to 200 nm. Preferably, the first insulating layer 6 is made of an aluminum oxide material and has a thickness of 150 nm.

The material of the negative electrode circuit layer 7 is one or more alloys of copper, silver, gold, nickel and tin with good conductivity, and the thickness of the negative electrode circuit layer 7 is 200-500 nm. Preferably, the material of the negative electrode circuit layer 7 is copper, and the thickness is 300 nm.

The material of the second insulating layer 8 is one of an aluminum oxide material, a silicon nitride material and a silicon oxide material, and the thickness of the second insulating layer 8 is in a range of 200 to 500 nm. Preferably, the second insulating layer 8 is made of silicon nitride material and has a thickness of 200 nm.

The material of the positive electrode circuit layer 9 is one or more alloys of copper, silver, gold, nickel and tin with relatively good conductivity, and the thickness of the positive electrode circuit layer 9 is between 200nm and 500 nm. Preferably, the material of the positive electrode circuit layer 9 is copper, and the thickness is 200 nm.

The positive electrode circuit layer 9 and the negative electrode circuit layer 7 form a vertically staggered gate electrode circuit, and the positive electrode circuit layer and the negative electrode circuit layer are insulated and separated by a second insulating layer 8.

The positive electrode 14 and the negative electrode 12 of each Micro UV LED chip 1 correspond to the positive electrode welding spot 13 on the positive electrode circuit layer 9 and the negative electrode welding spot 11 on the negative electrode circuit layer 7 one by one, and are independent of each other, and by designing the positive electrode circuit layer and the negative electrode circuit layer, the light emitting of each Micro UV LED chip 1 can be accurately controlled, and the control of each pixel point is realized.

In a preferred embodiment, the first surface 3 of the reticle substrate 2 is provided with a UV light confining layer 5. The mask is used for limiting UV light display, namely the back surface of the mask is not displayed and is a mask area.

The material of the UV light limiting layer 5 is one of a metal chromium material, a silicon material, a non-transparent aluminum oxide material and an iron oxide material, and the thickness range of the UV light limiting layer 5 is between 100 nm and 200 nm. Preferably, the material of the UV light confining layer 5 is a metal chromium material with a thickness of 150 nm.

In a preferred embodiment, a protection layer 15 is disposed above the Micro UV LED chip 1, the protection layer 15 is made of quartz or sapphire crystal, and the thickness of the protection layer 15 is 200 to 500 nm. Preferably, the material of the passivation layer 15 is quartz, and the thickness is 400 nm.

In a preferred embodiment, the surface of the protection layer 15 is further provided with an anti-glare photonic crystal nanostructure layer 16, the anti-glare photonic crystal nanostructure layer 16 includes microlens structures 160 arranged in an array, as shown in fig. 2, the diameters of the microlens structures 160 are 100 to 300nm, the arrangement period may be 300 to 500nm, the radian range of the microlens 160 is 0.5 to 3rad, and the height of the microlens 160 is 150 to 300 nm.

The anti-glare photonic crystal nano-structure 16 is prepared by nanoimprint lithography, and the anti-glare photonic crystal nano-structure 16 is used for improving uniformity control of a UV light path, so that the precision and yield of a photoetching process are improved. Finally, the required photoetching mask 17 with the graphic direct display light distribution function is manufactured.

As shown in fig. 3, a method for preparing a patterned direct-exposure light-emitting lithography mask comprises the following steps:

s01: depositing a first insulating layer on the second surface of the mask substrate through physical vapor deposition;

s02: preparing a negative electrode circuit layer on the upper surface of the first insulating layer, depositing a second insulating layer on the upper surface of the negative electrode circuit layer through physical vapor deposition, and preparing a positive electrode circuit layer on the upper surface of the second insulating layer;

s03: a negative electrode welding window is formed on the second insulating layer;

s04: connecting the negative electrode of the Micro UV LED chip with a negative electrode circuit layer through a negative electrode welding window, and connecting the positive electrode of the Micro UV LED chip with a positive electrode circuit layer, wherein the Micro UV LED chips are distributed in an array to form a display screen;

s05: the Micro UV LED chips are connected with the control circuit, and the on-off of each Micro UV LED chip is controlled through the control circuit, so that different mask pattern light paths are formed on the graphic display layer.

The physical vapor deposition can be a sputtering or electron beam evaporation method for coating.

The Micro UV LED chips are flip-chip welded on the substrate in a mass transfer mode, a positive electrode and a negative electrode of each Micro UV LED chip are in one-to-one correspondence with a positive electrode welding spot on the positive electrode circuit layer and a negative electrode welding spot on the negative electrode circuit layer and are mutually independent, and by means of design of the positive electrode circuit layer and the negative electrode circuit layer, light emission of each Micro UV LED chip can be accurately controlled, and control over each pixel point is achieved.

In a preferred embodiment, a protective layer is formed on the Micro UV LED chip by physical vapor deposition, the protective layer is made of quartz or sapphire crystal, and the thickness of the protective layer is 200-500 nm.

In a preferred embodiment, the anti-glare photonic crystal nanostructure layer is prepared on the surface of the protective layer by nanoimprint lithography, and the anti-glare photonic crystal nanostructure layer includes microlens structures arranged in an array, as shown in fig. 2, the diameters of the microlens structures 160 are 100 to 300nm, the arrangement period can be 300 to 500nm, the radian range of the microlens 160 is 0.5 to 3rad, and the height of the microlens 160 is 150 to 300 nm.

As shown in fig. 4, the utility model discloses an exposure imaging device again, including the photoetching mask version 17 and the projection objective 19 of foretell graphic direct display light, through the break-make of each Micro UV LED chip of control circuit control to make the photoetching mask version of graphic direct display light form different mask pattern light paths 18, adjust the line width size of mask pattern light path 18 through projection objective 19, realize the exposure formation of image of corresponding chip structure on wafer 20.

The position of the mask plate is always fixed and unchanged in the whole chip manufacturing process, the directly displayed mask pattern is changed, and the alignment precision of the process is improved to a certain extent under the condition that the mask plate is not moved. Secondly, because the utility model discloses the photoetching mask version 17 that has the direct display light distribution function of graphics that the method related to has the function of direct display, and mask version itself is exactly a UV luminous source, does not have the optical diffraction effect, has avoided the optical diffraction phenomenon that traditional mask version arouses under the condition that the line width diminishes. The photoetching mask plate with the graphical direct-display light distribution function, which is prepared by utilizing the Micro UV LED chip, has the characteristics of long service life, quick exposure response time, good light path uniformity and the like, is suitable for large-scale batch production, and can be widely applied to complex semiconductor chip process procedures.

It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims

1. A photo-etching mask plate for graphical direct display light distribution comprises a mask plate substrate and is characterized in that a graphical display layer and a display control layer are arranged on the mask plate substrate, the graphical display layer comprises Micro UV LED chips arranged in an array, and the Micro UV LED chips form a display screen; the display control layer comprises a control circuit connected with each Micro UV LED chip, and the control circuit is used for controlling the on-off of each Micro UV LED chip so that the graphic display layer forms different mask pattern light paths.

2. The direct light patterned photolithography reticle of claim 1, wherein the Micro UV LED chip is flip-chip bonded to a reticle substrate by mass transfer.

3. The lithographic mask according to claim 1, wherein the display control layer comprises a first insulating layer disposed on the second surface of the mask substrate, a negative electrode circuit layer is disposed on an upper surface of the first insulating layer, a second insulating layer is disposed on an upper surface of the negative electrode circuit layer, a positive electrode circuit layer is disposed on an upper surface of the second insulating layer, a negative electrode welding window is disposed on the second insulating layer, a negative electrode of the Micro UV LED chip is connected to the negative electrode circuit layer through the negative electrode welding window, and a positive electrode of the Micro UV LED chip is connected to the positive electrode circuit layer.

4. The direct visualization lithography reticle of claim 3, wherein the first surface of the reticle substrate is provided with a UV light confining layer.

5. The patterned direct-display light-emitting lithography mask according to claim 3, wherein a protective layer is arranged above the Micro UV LED chip, and the protective layer is made of quartz or sapphire crystal.

6. The patterned direct-display light-distribution photoetching mask plate according to claim 5, wherein an anti-dazzle photonic crystal nano-structure layer is further arranged on the surface of the protective layer, the anti-dazzle photonic crystal nano-structure layer comprises microlens structures which are arranged in an array, the radian range of the microlenses is 0.5-3 rad, and the heights of the microlenses are 150-300 nm.

7. An exposure imaging device, comprising the patterned direct-display light-distribution photolithography mask and the projection objective of any one of claims 1 to 6, wherein the on-off of each Micro UV LED chip is controlled by a control circuit, so that the patterned direct-display light-distribution photolithography mask forms different mask pattern light paths, and the line width dimension of the mask pattern light path is adjusted by the projection objective, thereby realizing exposure imaging of corresponding chip structures on a wafer.