CN214611514U - Single chip integrating thermal acceleration and infrared sensor - Google Patents
Single chip integrating thermal acceleration and infrared sensor Download PDFInfo
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- CN214611514U CN214611514U CN202022838404.1U CN202022838404U CN214611514U CN 214611514 U CN214611514 U CN 214611514U CN 202022838404 U CN202022838404 U CN 202022838404U CN 214611514 U CN214611514 U CN 214611514U
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Abstract
The utility model provides an integrated hot type acceleration and infrared sensor's single-chip, it includes first wafer portion, and first wafer portion includes: a first substrate; the first cavity is arranged in the first substrate, and filling gas is sealed in the first cavity and is gas which does not absorb or absorbs less specific infrared spectrum; the suspension bridge type sensor structure is arranged on the front surface of the first substrate, is opposite to the first cavity and can be switched to an acceleration detection mode or an infrared detection mode; and the signal processing circuit is arranged on the front surface of the first substrate and is used for processing the sensing signals generated by the suspension bridge type sensor structure. Compared with the prior art, the utility model discloses the same sensor structure of sharing can switch between acceleration measurement and infrared temperature detection, realizes the measurement to acceleration and temperature respectively to promote the integrated level, reduce chip area occupation and use cost.
Description
[ technical field ] A method for producing a semiconductor device
The utility model relates to a MEMS (micro electro mechanical system) device field especially relates to an integrated hot type acceleration and infrared sensor's single-chip (or sensor chip).
[ background of the invention ]
In recent years, acceleration sensors and infrared sensors based on the MEMS technology are widely used in people's daily life, such as sports, health monitoring, epidemic prevention monitoring, and the like. The acceleration sensor can be used for monitoring the state of equipment and has the functions of posture detection, motion perception and the like. The infrared sensor can play the roles of temperature detection, infrared imaging, human body induction monitoring and the like.
In the prior art, two independent devices, namely an acceleration sensor and an infrared detector, are generally required to complete acceleration measurement and infrared temperature measurement. Because the acceleration sensor and the infrared thermopile sensor are manufactured by different processes, the acceleration sensor and the infrared thermopile sensor are generally required to be respectively subjected to flow sheet, packaged and assembled on the same substrate. This requires more substrate area and more cost.
Therefore, it is necessary to provide a technical solution to overcome the above problems.
[ Utility model ] content
An object of the utility model is to provide an integrated hot type acceleration and infrared sensor's single-chip, it can promote the integrated level, reduces chip area occupation and use cost.
According to an aspect of the utility model provides an integrated hot type acceleration and infrared sensor's single-chip, it includes first wafer portion, first wafer portion includes: a first substrate; a first cavity disposed in the first substrate, wherein a filling gas is sealed in the first cavity, and the filling gas is a gas which does not absorb or absorbs less specific infrared spectrum; the suspended bridge type sensor structure is arranged on the front surface of the first substrate, is opposite to the first cavity and can be switched into an acceleration detection mode or an infrared detection mode; and the signal processing circuit is arranged on the front surface of the first substrate and is used for processing the sensing signals generated by the suspension bridge type sensor structure.
Further, the suspension bridge sensor structure includes: a support layer on a front side of the first substrate and over the first cavity; the thermopile comprises a first thermopile unit, a second thermopile unit, a third thermopile unit and a fourth thermopile unit, wherein the first thermopile unit and the second thermopile unit are arranged in the x-axis direction and are respectively positioned on a first side edge and a second side edge which are opposite to each other of the first cavity, the third thermopile unit and the fourth thermopile unit are arranged in the y-axis direction and are respectively positioned on a third side edge and a fourth side edge which are opposite to each other of the first cavity, and the x axis and the y axis form a rectangular coordinate system; a heater disposed in a middle portion of the suspension bridge sensor structure.
Further, the heater comprises four groups of heating units, wherein two groups of heating units are arranged in parallel in the x-axis direction, and the other two groups of heating units are arranged in parallel in the y-axis direction.
Further, the single chip of the integrated thermal acceleration and infrared sensor further includes a second wafer portion, a front surface of the second wafer portion is bonded with a front surface of the first wafer portion, the second wafer portion includes: a second substrate; a second cavity disposed in the second substrate and opposite the suspension bridge sensor structure, the second cavity having the fill gas sealed therein.
Further, when in an acceleration detection mode, applying a current to the heater to heat the fill gas, the signal processing circuit acquiring an acceleration in an x-axis direction based on a difference of voltage signals output by the first thermopile unit and the second thermopile unit; the signal processing circuit acquires acceleration in the y-axis direction based on a difference value of voltage signals output by the third thermopile unit and the fourth thermopile unit, when the signal processing circuit is in an infrared temperature detection mode, the heater is turned off, the voltage signals output by the first thermopile unit, the second thermopile unit, the third thermopile unit and the fourth thermopile unit are connected in series through the switch, so that the thermopiles output total voltage signals, and the signal processing circuit acquires infrared temperature based on the total voltage signals output by the thermopiles.
Further, the thermopile is composed of N-doped or P-doped polysilicon and metal; the thermopile consists of N-doped and P-doped polycrystalline silicon; the thermopile is composed of other materials with the Seebeck effect; or the heater is made of metalized polysilicon or metal.
Further, when in the acceleration detection mode, the fill gas acts as a medium for detecting acceleration; when in the infrared detection mode, the filling gas plays a role of heat insulation, and the infrared detection efficiency is enhanced.
Further, the filling gas is nitrogen, xenon or krypton; the signal processing circuit and the suspension bridge type sensor have the same level and are manufactured at the same time.
Compared with the prior art, the utility model discloses utilize CMOS-MEMS processing technology, with hot type acceleration sensor and thermopile infrared sensor integration on same chip, share the same sensor structure, can switch between acceleration measurement and infrared temperature detection according to the demand, realize the measurement to acceleration and temperature respectively to promote the integrated level, reduce chip area occupied and use cost.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor. Wherein:
fig. 1 is a schematic longitudinal cross-sectional view of a single chip integrating thermal acceleration and infrared sensors in one embodiment of the present invention;
fig. 2 is a top view of the suspension bridge sensor structure of fig. 1 in one embodiment of the present invention;
fig. 3 is a schematic flow chart illustrating a method for manufacturing the suspension bridge sensor structure shown in fig. 2 according to an embodiment of the present invention.
[ detailed description ] embodiments
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with at least one implementation of the invention is included. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Unless otherwise specified, the terms connected, and connected as used herein mean electrically connected, directly or indirectly.
Please refer to fig. 1, which is a schematic longitudinal sectional view of a single chip integrated with thermal acceleration and infrared sensor according to an embodiment of the present invention. The single chip integrated thermal acceleration and infrared sensor shown in fig. 1 comprises a first wafer portion 110, a second wafer portion 120 and a fill gas (not identified). After wafer level packaging, a wafer dicing step is performed to form a plurality of mutually independent package structures, i.e., independent chips. The first wafer portion 110 and the second wafer portion 120 belong to two independent wafers from a view before wafer dicing, i.e., from a view at a wafer level, and the first wafer portion 110 and the second wafer portion 120 can be understood as chips cut from the corresponding wafers from a view after wafer dicing, i.e., from a view at a chip level.
The first wafer section 110 includes a first substrate 112, a MEMS suspension bridge sensor structure (or suspension bridge probe structure) 114, signal processing circuitry (not shown), and a first cavity 116. A first cavity 116 extends from the front side of the first substrate 112 into the first substrate 112; a MEMS bridge sensor structure 114 disposed on the front side of the first substrate 112 and opposite to the first cavity 116 (or the first cavity 116 is located below the MEMS bridge sensor structure 114), the MEMS bridge sensor structure 114 being configured to perform acceleration measurement and infrared temperature measurement; signal processing circuitry is disposed on the front side of the first substrate 112 for processing sensing signals (e.g., voltage signals) generated by the MEMS suspension bridge sensor structure 114. In the embodiment shown in fig. 1, the first substrate 112 is a silicon substrate, and the first cavity 116 under the MEMS suspension bridge sensor structure 114 can be obtained by etching the silicon substrate.
The second wafer portion 120 includes a second substrate 122 and a second cavity 124, the second cavity 124 extends from the front side of the second substrate 122 into the second substrate 122, the front side of the second wafer portion 120 (or the front side of the second substrate 122) is bonded to the front side of the first wafer portion 110, and the second cavity 124 is opposite to the MEMS suspension sensor structure 114. In the embodiment shown in fig. 1, the second substrate 122 is a lid (capping) wafer, and the second cavity 124 located above the MEMS suspension bridge sensor structure 114 can be obtained by etching or machining the capping wafer; an infrared filter coating 130 is disposed (or covered) on the back surface of the second wafer portion 120 (or the surface of the second wafer portion 120 away from the first wafer portion 110).
The first cavity 116 and the second cavity 124 are sealed with a filling gas, which is a gas that is not or less absorbing in a specific infrared spectrum, and may be nitrogen, xenon, krypton, or the like. When the single chip (or MEMS bridge sensor structure 114) is in an acceleration detection mode, the fill gas acts as a medium to detect acceleration; when the single chip (or MEMS suspended bridge sensor structure 114) is in the infrared detection mode, the fill gas can serve as a good thermal insulator to enhance the infrared detection efficiency.
Fig. 2 is a top view of the suspension bridge sensor structure shown in fig. 1 according to an embodiment of the present invention. The MEMS bridge sensor structure shown in fig. 2 includes a support layer 210, a thermopile 220, and a heater 230. For the sake of convenience in the following description, a rectangular coordinate system is defined in fig. 2, wherein the x-axis extends from left to right, the y-axis extends from bottom to top, and the plane of the x-axis and the y-axis is parallel to the surface of the first wafer portion 110 shown in fig. 1.
The support layer 210 is located on the front surface of the first substrate 112 and above the first cavity 116, and the support layer material may be silicon dioxide, silicon nitride, polysilicon, metal or organic material, and the support layer material itself may be used for absorbing infrared rays.
The thermopile 220 includes four sets of thermopile units, i.e., a first thermopile unit TP1, a second thermopile unit TP2, a third thermopile unit TP3, and a fourth thermopile unit TP4, respectively arranged in four directions, i.e., the upper, lower, left, and right directions of the first cavity 116 (i.e., the surface direction of the first wafer portion 110). Wherein, first thermopile unit TP1 and second thermopile unit TP2 set up in the x axle direction, and are located respectively the relative first side and the second side of first cavity 116, third thermopile unit TP3 and fourth thermopile unit TP4 set up in the y axle direction, and are located respectively the relative third side and the fourth side of first cavity 116. The thermopile 220 may be composed of N-doped or P-doped polysilicon and a metal (e.g., aluminum), may be composed of N-doped and P-doped polysilicon, and may be composed of other materials having the seebeck effect.
The heater 230 is disposed in the middle, such as the center, of the MEMS suspension bridge sensor structure 114, and includes four sets of heating units (not shown), wherein two sets of heating units are disposed in parallel in the x-axis direction, and the other two sets of heating units are disposed in parallel in the y-axis direction. The heater 230 may be made of metalized polysilicon or metal.
In one embodiment, the signal processing circuitry is fabricated at the same level as the MEMS bridge sensor structure 114. The signal processing circuit comprises signal processing units such as an operational amplifier, an analog-to-digital converter and the like.
The operation of the single chip integrated thermal acceleration and infrared sensor shown in fig. 1 will be described in detail with reference to fig. 2.
When the single chip shown in fig. 1 is in the acceleration detection mode, the heater 230 is caused to heat the fill gas in the closed cavities (e.g., the first cavity 116 and the second cavity 124) by applying a current to the heater 230, and the fill gas flows with the direction and magnitude of the acceleration after being heated. By detecting the direction and speed of the flow of the heated fill gas within the enclosed cavity, the direction and magnitude of the acceleration can be obtained.
The four-direction thermopile units TP1, TP2, TP3 and TP4 are respectively at T temperature1、T2、T3And T4(ii) a The voltage signals output by the four-direction thermopile units TP1, TP2, TP3 and TP4 are V respectively1、 V2、V3And V4。
When no acceleration exists, the temperatures are symmetrically distributed, so that the temperatures of the thermopile units TP1, TP2, TP3 and TP4 in four directions are the same.
T1＝T2
T3＝T4
Therefore, the voltage signals output by the thermopile units TP1, TP2, TP3, and TP4 in four directions are also the same:
V1＝V2
V3＝V4
if there is acceleration in the x-axis direction and the direction is positive (or negative), the temperature of the thermopile units TP1, TP2 corresponding to the x-axis direction changes and is proportional to the acceleration in the x-axis direction, and the voltage signals of the two groups of thermopile units TP1 and TP2 also change with the acceleration in the x-axis direction:
T1-T2＝ΔTx
ΔTx∝ax
V1-V2＝ΔVx∝ax
wherein, Delta TxThe temperature difference between thermopile units TP1 and TP2 in the x-axis direction, axAcceleration in the x-axis direction, Δ VxThe voltage signal difference between thermopile units TP1 and TP2 corresponding to the x-axis direction. The signal processing circuit is based on a difference value DeltaV of voltage signals output from the first and second thermopile units TP1 and TP2xObtaining (or acquiring) the acceleration a in the x-axis direction, V1-V2x。
Similarly, if there is acceleration in the y-axis direction and the direction is positive (or negative), the temperature of the thermopile units TP3 and TP4 corresponding to the y-axis direction changes and is proportional to the acceleration in the y-axis direction, and the voltage signals of the two groups of thermopile units TP3 and TP4 also change with the acceleration in the y-axis direction:
T3-T4＝ΔTy
ΔTy∝ay
V3-V4＝ΔVy∝ay
wherein, Delta TyA is the temperature difference between thermopile units TP3 and TP4 corresponding to the y-axis directionyAcceleration in the y-axis direction, Δ VyThe voltage signal difference between thermopile units TP3 and TP4 corresponding to the y-axis direction. The signal processing circuit outputs a difference value Δ Vy ═ V based on the third and fourth thermopile units TP3 and TP43-V4To obtain (or obtain) the acceleration a in the y-axis directiony。
When the single chip shown in fig. 1 is in the infrared temperature detection mode, the heater 230 is turned off. The temperature of the whole MEMS bridge sensor structure 114 can be raised after absorbing infrared rays, and the heat mainly flows out through the MEMS bridge sensor structure 114 connected to the first substrate 112, so that temperature distribution in the middle of the MEMS bridge sensor structure 114 is formed, and the temperature around the MEMS bridge sensor structure 114 is high. Due to the seebeck effect, the temperature difference causes voltage differences among the four groups of thermopile units TP1, TP2, TP3, and TP 4. The voltage signals output by the first, second, third and fourth thermopile units TP1, TP2, TP3 and TP4 are connected in series by a switch (not shown), and the total voltage signal output by the thermopile 220 is:
Vtotal＝V1+V2+V3+V4
total voltage signal VtotalIn proportion to the intensity of the infrared ray, the signal processing circuit derives (or acquires) a corresponding infrared temperature based on the total voltage signal output from the thermopile 220.
That is, when the single chip shown in fig. 1 is in the acceleration detection mode, a current is applied to the heater 230 to heat the filling gas in the closed cavity, and the signal processing circuit obtains an acceleration in the y-axis direction based on a difference between the voltage signals output from the first and second thermopile units TP1 and TP 2; the signal processing circuit obtains acceleration in the y-axis direction based on a difference between the voltage signals output from the third and fourth thermopile units TP3 and TP 4. When the single chip shown in fig. 1 is in the infrared temperature detection mode, the heater 230 is turned off, the voltage signals output by the first thermopile unit TP1, the second thermopile unit TP2, the third thermopile unit TP3 and the fourth thermopile unit TP4 are connected in series through a switch, the thermopile 220 outputs a total voltage signal, and the signal processing circuit obtains the infrared temperature based on the total voltage signal output by the thermopile 220.
Fig. 3 is a flow chart illustrating a method for manufacturing the suspension bridge sensor structure shown in fig. 2 according to an embodiment of the present invention, which utilizes a standard CMOS circuit process to fabricate the suspension bridge sensor structure on the first substrate 112. The method of manufacturing the suspension bridge sensor structure shown in fig. 3 comprises the following steps.
Step 303, depositing polysilicon on the support layer 210, doping the deposited polysilicon with P-type and/or N-type, and patterning. Depending on the composition of the thermopile 220: if the thermopile 220 is composed of N-type doped and P-type doped polysilicon, P-type and N-type doping and patterning are performed on the polysilicon; if the thermopile 220 is composed of N-type doped polysilicon and metal, the polysilicon is N-type doped and patterned; if the thermopile 220 is composed of P-type doped polysilicon and metal, the polysilicon is P-type doped and patterned.
Step 304 metallizes the deposited polysilicon to form heater 230. The metallization material may be titanium silicide or tungsten silicide.
Step 305 deposits a first dielectric layer on the doped and metallized polysilicon layer.
And 307, depositing a first metal layer on the first dielectric layer with the through holes and patterning the first metal layer. If the thermopile 220 is composed of N-type doped and P-type doped polysilicon, the patterned first metal layer is mainly used as a wire; if the thermopile 220 is composed of a metal and N-type doped or P-type doped polysilicon, the patterned first metal layer serves as the anode or cathode of the thermopile 220. In one embodiment, the material of the first metal layer is aluminum.
And 311, depositing a passivation layer on the third dielectric layer. The passivation layer may be a material such as silicon nitride.
And step 312, manufacturing an etching protection layer on the passivation layer. The etch protection layer may be photoresist or a passivation material such as polyimide.
In step 314, deep silicon etching (DRIE) and dry etching are performed on the first substrate 112 through the etching holes 240 to form a cavity, and the first substrate 112 under the film is removed to form a heat insulating cavity, i.e., the first cavity 116. The longitudinal etching depth of the first cavity 116 is about 50-400 microns; the lateral etching depth is about 40-100 microns.
The first chamber 116 is filled 315 with a fill gas having a controlled purity, such as nitrogen, xenon, krypton, or the like. When the single chip shown in fig. 1 is in an acceleration detection mode, a gas is filled as a medium for detecting acceleration; when the single chip shown in fig. 1 is in an infrared detection mode, the filling gas can play a good role in heat insulation, and the infrared detection efficiency is enhanced.
To sum up, the utility model discloses utilize CMOS-MEMS processing technology, with hot type acceleration sensor and thermopile infrared sensor integration on same chip, share the same sensor structure, can switch between acceleration measurement and infrared temperature detection according to the demand, realize the measurement to acceleration and temperature respectively to promote the integrated level, reduce chip area and use cost.
In the present invention, the terms "connected", "connecting", and the like denote electrical connections, and, unless otherwise specified, may denote direct or indirect electrical connections.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiment, but all equivalent modifications or changes made by those skilled in the art according to the present invention should be included in the protection scope of the claims.
Claims (8)
1. A single chip integrating thermal acceleration and infrared sensors, characterized in that it comprises a first wafer portion comprising:
a first substrate;
a first cavity disposed in the first substrate, wherein a filling gas is sealed in the first cavity, and the filling gas is a gas which does not absorb or absorbs less specific infrared spectrum;
the suspended bridge type sensor structure is arranged on the front surface of the first substrate, is opposite to the first cavity and can be switched into an acceleration detection mode or an infrared detection mode;
and the signal processing circuit is arranged on the front surface of the first substrate and is used for processing the sensing signals generated by the suspension bridge type sensor structure.
2. The integrated thermal acceleration and infrared sensor single chip according to claim 1, characterized in that said suspended bridge sensor structure comprises:
a support layer on a front side of the first substrate and over the first cavity;
the thermopile comprises a first thermopile unit, a second thermopile unit, a third thermopile unit and a fourth thermopile unit, wherein the first thermopile unit and the second thermopile unit are arranged in the x-axis direction and are respectively positioned on a first side edge and a second side edge which are opposite to each other of the first cavity, the third thermopile unit and the fourth thermopile unit are arranged in the y-axis direction and are respectively positioned on a third side edge and a fourth side edge which are opposite to each other of the first cavity, and the x axis and the y axis form a rectangular coordinate system;
a heater disposed in a middle portion of the suspension bridge sensor structure.
3. Single chip integrating thermal acceleration and infrared sensors according to claim 2,
the heater comprises four groups of heating units, wherein two groups of heating units are arranged in parallel in the x-axis direction, and the other two groups of heating units are arranged in parallel in the y-axis direction.
4. The integrated thermal acceleration and infrared sensor single chip according to claim 2, characterized in that it further comprises a second wafer portion, the front face of which is bonded with the front face of the first wafer portion, the second wafer portion comprising:
a second substrate;
a second cavity disposed in the second substrate and opposite the suspension bridge sensor structure, the second cavity having the fill gas sealed therein.
5. Single chip integrating thermal acceleration and infrared sensors according to claim 2 or 4,
when in an acceleration detection mode, applying a current to the heater to heat the fill gas, the signal processing circuit acquiring an acceleration in an x-axis direction based on a difference of voltage signals output by the first and second thermopile units; the signal processing circuit acquires acceleration in the y-axis direction based on a difference value of the voltage signals output by the third thermopile unit and the fourth thermopile unit,
when the infrared temperature detection device is in an infrared temperature detection mode, the heater is turned off, voltage signals output by the first thermopile unit, the second thermopile unit, the third thermopile unit and the fourth thermopile unit are connected in series through the switch, so that the thermopiles output total voltage signals, and the signal processing circuit acquires infrared temperature based on the total voltage signals output by the thermopiles.
6. Single chip integrating thermal acceleration and infrared sensors according to claim 2 or 4,
the thermopile is composed of other materials with the Seebeck effect; or
The heater is made of metalized polysilicon or metal.
7. Single chip integrating thermal acceleration and infrared sensors according to claim 2 or 4,
when in an acceleration detection mode, the fill gas acts as a medium to detect acceleration;
when in the infrared detection mode, the filling gas plays a role of heat insulation, and the infrared detection efficiency is enhanced.
8. Single chip integrating thermal acceleration and infrared sensors according to claim 2 or 4,
the filling gas is nitrogen, xenon or krypton;
the signal processing circuit and the suspension bridge type sensor have the same level and are manufactured at the same time.
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