CN214581704U - Remote air conditioner control device based on Hetai single chip microcomputer - Google Patents

Abstract

The utility model discloses a long-range air conditioner controlling means based on close tai singlechip, including closing tai singlechip control circuit, two-way wireless radio frequency circuit, infrared transmitting circuit, signal indication circuit and power supply circuit, two-way wireless radio frequency circuit, infrared transmitting circuit and signal indication circuit all with close tai singlechip control circuit and be connected, close tai singlechip control circuit, two-way wireless radio frequency circuit and infrared transmitting circuit all with power supply circuit connection, two-way wireless radio frequency circuit be used for with cell-phone wireless communication, infrared transmitting circuit be used for with air conditioner wireless communication. The utility model discloses remote air conditioner controlling means based on close tai singlechip has solved the unable remote control's of traditional air conditioner problem, makes traditional air conditioner can use the smart mobile phone to carry out remote control to it and open and close.

Description

Remote air conditioner control device based on Hetai single chip microcomputer

Technical Field

The utility model relates to an intelligence remote control field, concretely relates to remote air conditioner controlling means based on close tai singlechip.

Background

Since the innovation was open, the Chinese economy experienced rapid growth from gradually breaking the closure condition, to undergoing the transition from 'volume expansion' to 'quality winning', to the position of the second largest economic body in the world, while the economic development is not backed by a great deal of support from energy, resources, manpower and the like in the country. Although China has become the first major country of world energy production, the energy utilization efficiency of China is still a gap compared with that of developed countries. Meanwhile, the energy consumption of China is huge, and the energy consumption becomes the first world with large energy consumption. The increase of energy consumption brings huge pressure on energy conservation and emission reduction for China and even the world.

Meanwhile, with the rapid development of national economy, the air conditioner gradually becomes an essential product for daily life and work of people, and the life of people is improved. People begin to pay attention to the problems of living comfort and the like, and the air conditioner, as a sharp instrument for adjusting temperature, gradually becomes an essential article for daily life, work, study and entertainment of people, and is widely applied to places such as offices, schools, markets and the like. However, a series of problems along with the development of air conditioners continuously affect our society and people's lives, social problems such as environmental pollution and energy consumption are obvious, and problems brought by the air conditioners also bring troubles to people's lives. Economic development has brought the facility for resident's life, and resident's quality of life constantly improves, and people also improve gradually to the degree of dependence of air conditioner when enjoying that the air conditioner brings the facility, and overuse air conditioner phenomenon also more and more ubiquitous. How to reduce the energy consumption of the air conditioner as much as possible while ensuring that the air conditioner provides comfortable environment for people is a focus of energy saving attention of the air conditioner and is also one of links for reducing the energy consumption pressure of China and even the world.

Meanwhile, the situation of energy waste also causes another problem, namely that the refrigeration and heating are too slow along with the aging of the air conditioner or the problems of house structures, materials and the like, so that the comfort of using the air conditioner by people is influenced. At present, although an intelligent air conditioner can be remotely controlled by using a mobile phone, the intelligent air conditioner only needs a novel air conditioner, and the intelligent air conditioner cannot be used for a traditional air conditioner. Therefore, a circuit capable of remotely controlling the air conditioner through a mobile phone is urgently needed to solve the problem that the traditional air conditioner cannot be remotely controlled.

Disclosure of Invention

The utility model aims to solve the technical problem that not enough to above-mentioned prior art provides a remote air conditioner controlling means based on closing tai singlechip, and this remote air conditioner controlling means based on closing tai singlechip has solved the unable remote control's of traditional air conditioner problem, makes traditional air conditioner can use the smart mobile phone to carry out remote control to it and open and close.

In order to realize the technical purpose, the utility model discloses the technical scheme who takes does:

a remote air conditioner control device based on a HETAI single chip microcomputer comprises a HETAI single chip microcomputer control circuit, a bidirectional wireless radio frequency circuit, an infrared transmitting circuit, a signal indicating circuit and a power supply circuit, wherein the bidirectional wireless radio frequency circuit, the infrared transmitting circuit and the signal indicating circuit are all connected with the HETAI single chip microcomputer control circuit;

the HE TAI singlechip control circuit adopts an HT32F52231 singlechip, a VDD pin of the HT32F52231 singlechip is connected with a +3.3 power supply and is connected with a ground wire through a capacitor C1, a VDDA pin of the HT32F52231 singlechip is connected with the +3.3 power supply and is connected with the ground wire through a capacitor C2, a CLDO pin of the HT32F52231 singlechip is connected with the ground wire through a capacitor C3, and a VSS pin of the HT32F52231 singlechip is connected with the ground wire; the PA3 pin, the PA4 pin and the PA5 pin of the HT32F52231 singlechip are all connected with an infrared emission circuit; the PA0 pin and the PA1 pin of the HT32F52231 singlechip are both connected with a signal indicating circuit;

the bidirectional wireless radio frequency circuit adopts a bidirectional wireless radio frequency chip BC3601, an ANT pin of the bidirectional wireless radio frequency chip BC3601 is connected with an antenna, a GND pin of the bidirectional wireless radio frequency chip BC3601 is connected with a ground wire, a VCC pin of the bidirectional wireless radio frequency chip BC3601 is connected with a +3.3V power supply, the VCC pin is connected with the ground wire through a capacitor C8 and is connected with the ground wire through a capacitor C9, an SO pin of the bidirectional wireless radio frequency chip BC3601 is connected with a PB7 pin of an HT32F52231 singlechip, an SI pin of the bidirectional wireless radio frequency chip BC3601 is connected with a9 pin of the HT32F52231 singlechip, an SCK pin of the bidirectional wireless PA BC3601 is connected with a PB3 pin of the HT32F52231 singlechip, an NSS pin of the bidirectional wireless radio frequency chip BC3601 is connected with a PB4 pin of the HT32F52231, and a RESET pin of the bidirectional wireless radio frequency chip BC3601 is connected with a PB8 pin of the HT32F52231 singlechip;

the infrared emission circuit adopts an infrared emission chip KT-003.

As the utility model discloses further modified technical scheme, power supply circuit adopts chip HT7533, power +12V is connected to chip HT 7533's Vin pin and this Vin pin passes through electric capacity C10 and connects the ground wire, chip HT 7533's GND pin connects the ground wire, chip HT 7533's Vout pin passes through electric capacity C11 and connects the ground wire, and this Vout pin is used for exporting +3.3V power.

As a further improved technical scheme of the utility model, pin 27 of infrared emission chip KT-003 in the infrared emission circuit is connected +3.3V power, and pin 27 passes through electric capacity C4 and connects the ground, connects the ground through electric capacity C5, pin 23 of infrared emission chip KT-003 is connected with pin PA3 of HT32F52231 singlechip, pin 17 of infrared emission chip KT-003 is connected with pin PA5 of HT32F52231 singlechip, pin 16 of infrared emission chip KT-003 is connected with pin PA4 of HT32F52231 singlechip, pin 3 of infrared emission chip KT-003 is connected with crystal oscillator Y1 one end and electric capacity C6 one end simultaneously, pin 4 of infrared emission chip KT-003 is connected with the other end of crystal oscillator Y1 and electric capacity C7 one end simultaneously, electric capacity C6 and electric capacity C7 other end all connect the ground, pin 2 of infrared emission chip KT-003 connects the ground, the chip KT-003 with infrared emission chip pin 1 simultaneously with the triode Q1 the collector and the one end of resistance R2 be connected, the other end of resistance R2 is connected +3.3V power, the base of triode Q1 is connected with the collector of triode Q2 and one end of resistance R3 simultaneously, the emitter of triode Q2 is connected +3.3V power, the base of triode Q2 is connected with resistance R4 one end and the positive pole of diode D2 simultaneously, the negative pole of diode D2 is connected with the negative pole of infrared transceiver one-transistor D1 through resistance R6, the positive pole of infrared transceiver one-transistor D1 is connected with +3.3V power, pin 24 of infrared emission chip KT-003 is connected with the emitter of triode Q1 simultaneously, the other end of resistance R3 and one end of resistance R5, the other end of resistance R5 is connected with the other end of resistance R4 and the negative pole of diode D3 simultaneously, the positive pole of diode D3 is connected with +3.3V power, the pin 25 of the infrared emission chip KT-003 is connected with one end of a resistor R11, a resistor R12, a resistor R13 and a resistor R14, the other end of the resistor R11 is connected with the base of a triode Q3, the emitter of the triode Q3 is connected with the ground, the collector of the triode Q3 is connected with a +3.3V power supply sequentially through a resistor R7 and an infrared transceiving integral tube D4, the other end of the resistor R12 is connected with the base of a triode Q4, the emitter of the triode Q4 is connected with the ground, the collector of the triode Q4 is connected with the +3.3V power supply sequentially through a resistor R8 and an infrared transceiving integral tube D5, the other end of the resistor R13 is connected with the base of a triode Q5, the emitter of the triode Q5 is connected with the ground, the collector of the triode Q5 is connected with the +3.3V power supply sequentially through a resistor R9 and an infrared transceiving integral tube D6, the other end of the resistor R14 is connected with the base of a triode Q6, and the emitter of a ground is connected with the Q6, the collector of the triode Q6 is connected with a +3.3V power supply through a resistor R10 and an infrared transceiving integral transistor D7 in sequence.

As a further improved technical scheme of the utility model, the infrared receiving and dispatching integrated pipe D1, infrared receiving and dispatching integrated pipe D4, infrared receiving and dispatching integrated pipe D5, infrared receiving and dispatching integrated pipe D6 and infrared receiving and dispatching integrated pipe D7 all adopt HXD 5038-120.

As the utility model discloses further modified technical scheme, signal indication circuit includes emitting diode D8, resistance R15, emitting diode D9 and resistance R16, emitting diode D8's negative pole is connected the ground wire, and the positive pole is connected through the PA1 pin of resistance R15 with HT32F52231 singlechip, emitting diode D9's negative pole is connected the ground wire, and the positive pole is connected through the PA0 pin of resistance R16 with HT32F52231 singlechip.

The utility model has the advantages that:

1. the utility model discloses whole circuit is simple reliable, uses the opening and closing of cell-phone control air conditioner, and the convenience is high. On one hand, the HT32F52231 single chip microcomputer is used as a control unit of the device, so that the bidirectional wireless FSK/GFSK high-performance radio frequency chip BC3601 is controlled to be connected with a cloud side to receive and send information, and operations such as on-off control and mode adjustment of a traditional air conditioner controlled by a mobile phone APP are achieved; on the other hand, after receiving the relevant signals, the infrared transmitting chip KT-003 is controlled to transmit infrared signals so as to realize the relevant control of the air conditioner.

2. The utility model discloses successful improve traditional air conditioner for more wisdom's air conditioner, let the user can open or close the air conditioner of oneself through the cell-phone at any time and anywhere, reduced the air conditioner energy consumption, and open the air conditioner in advance, can make the air conditioner move in advance, solved refrigeration and heat slow problem, increased user's use and experienced the sense, the comfort.

Drawings

Fig. 1 is a schematic block diagram of the structure of the present invention.

Fig. 2 is a schematic diagram of the control circuit principle of the inventive HETAI single chip microcomputer.

Fig. 3 is a schematic diagram of the infrared transmitting circuit of the present invention.

Fig. 4 is a schematic diagram of the two-way wireless rf circuit of the present invention.

Fig. 5 is a schematic diagram of the power circuit of the present invention.

Fig. 6 is a schematic diagram of the signal indicating circuit of the present invention.

Detailed Description

The following further description of embodiments of the invention is made with reference to the accompanying drawings:

as shown in figure 1, a remote air conditioner control device based on close tai singlechip, including closing tai singlechip control circuit, two-way wireless radio frequency circuit, infrared transmitting circuit, signal indication circuit and power supply circuit, two-way wireless radio frequency circuit, infrared transmitting circuit and signal indication circuit all with close tai singlechip control circuit and be connected, close tai singlechip control circuit, two-way wireless radio frequency circuit and infrared transmitting circuit all with power supply circuit connection, two-way wireless radio frequency circuit be used for with cell-phone wireless communication, infrared transmitting circuit be used for with air conditioner wireless communication.

As shown in fig. 2, the cloisonne single-chip microcomputer control circuit adopts an HT32F52231 single-chip microcomputer (U1), a VDD pin of the HT32F52231 single-chip microcomputer is connected with a +3.3 power supply and the VDD pin is connected with a ground wire through a capacitor C1, a VDDA pin of the HT32F52231 single-chip microcomputer is connected with a +3.3 power supply and the VDDA pin is connected with a ground wire through a capacitor C2, a CLDO pin of the HT32F52231 single-chip microcomputer is connected with a ground wire through a capacitor C3, and a VSS pin of the HT32F52231 single-chip microcomputer is connected with the ground wire; the PA3 pin, the PA4 pin and the PA5 pin of the HT32F52231 singlechip are all connected with an infrared emission circuit; and a PA0 pin and a PA1 pin of the HT32F52231 singlechip are both connected with a signal indicating circuit.

In the embodiment, an HT32F52231 single chip microcomputer of HETAI is used as a core controller, and the HT32F52231 single chip microcomputer is one of Holtek HT32F522x1/523x1 series and is based on Arm Cortex-M0⁺32-bit high-performance low-power consumption singlechip of treater kernel. Cortex-M0⁺Is a new generation of processor cores that tightly couples Nested Vector Interrupt Controller (NVIC), system tick Timer (SysTick Timer), and advanced debug support.

Fig. 2 is a circuit diagram of the HT32F52231 single chip microcomputer and other devices, and is, firstly, a power supply connection part, which has VDD, VDDA, and VSS ports, and respectively provides a working Voltage (VDD) inside the device, a power supply Voltage (VDDA) of all analog circuit parts, and a common ground Voltage (VSS) of the circuit. The capacitors C1 and C2 connected with VDD and VDDA are used for filtering and stabilizing voltage and improving the transient impact resistance of the power supply in phase change. A 10K resistor R1 connected to the VSS port provides protection. GPIO ports of HT32F52231 are all multifunctional multiplexing ports, and users can select functions of different ports according to different requirements. PB3, PB4, PB7, and PA9 constitute SPI communication of BC 3601. PB3 is connected to its SCK synchronous clock terminal to control its SPI communication. The PB4 is connected with the chip selection end of the BC3601 in an enabling mode, and the single chip microcomputer sends different chip selection signals to the BC3601 through the PB4 port to control the BC3601 to read and write data and send and receive information. PB7 is connected with the SO end thereof, is an MISO port and has a main input and a secondary output; the PA9 is connected with the SI end thereof and is a MOSI port, and the main output is input from the slave. PB8 is connected to the RESET terminal to control its RESET set. PA0, PA1 are connected with signal lamps D8 and D9. The PA3, the PA4 and the PA5 are connected with the infrared emission chip to form communication, wherein the PA3 is connected with the Stduy _ LED and is used for controlling the infrared emission chip to learn and control the operation of the air conditioner. The PA4 is connected with the RXD end, and the infrared emission chip receives signals sent by the singlechip. The PA5 is connected with the TXD, and the infrared emission chip sends signals to the singlechip.

As shown in fig. 3, the infrared emission circuit employs an infrared emission chip KT-003 (U2). Pin 27 of infrared emission chip KT-003 in the infrared emission circuit connects +3.3V power, and pin 27 passes through electric capacity C4 and connects the ground wire, connects the ground wire through electric capacity C5, pin 23 of infrared emission chip KT-003 is connected with pin PA3 of HT32F52231 singlechip, pin 17 of infrared emission chip KT-003 is connected with pin PA5 of HT32F52231 singlechip, pin 16 of infrared emission chip KT-003 is connected with pin PA4 of HT32F52231 singlechip, pin 3 of infrared emission chip KT-003 is connected with crystal oscillator Y1 one end and electric capacity C6 one end simultaneously, pin 4 of infrared emission chip KT-003 is connected with crystal oscillator Y1 other end and electric capacity C7 one end simultaneously, the electric capacity C6 and electric capacity C7 other end all connect the ground wire, pin 2 of infrared emission chip KT-003 connects the ground wire, pin 1 of infrared emission chip KT-003 is connected with the collecting electrode of triode Q1 and the resistance R2's collector simultaneously Connect, the other end of resistance R2 connects the +3.3V power, triode Q1's base is connected with triode Q2's collecting electrode and resistance R3's one end simultaneously, triode Q2's emitter is connected +3.3V power, triode Q2's base is connected with resistance R4 one end and diode D2's positive pole simultaneously, diode D2's negative pole is connected with the negative pole of infrared transceiver transistor D1 through resistance R6, the positive pole of infrared transceiver transistor D1 is connected with the +3.3V power, pin 24 of infrared emission chip KT-003 is connected with triode Q1's emitter, the resistance R3 other end and the one end of resistance R5 simultaneously, the other end of resistance R5 is connected with the resistance R4 other end and the negative pole of diode D3 simultaneously, the positive pole of diode D3 is connected with the +3.3V power, pin 25 of infrared emission chip-003 is connected with resistance R11 simultaneously, One end of a resistor R12, one end of a resistor R13 and one end of a resistor R14 are connected, the other end of the resistor R11 is connected with the base electrode of a triode Q3, the emitter electrode of a triode Q3 is connected with the ground wire, the collector electrode of a triode Q3 is connected with a +3.3V power supply through the resistor R7 and an infrared transceiving integral transistor D4 in sequence, the other end of the resistor R12 is connected with the base electrode of the triode Q4, the emitting electrode of the triode Q4 is connected with the ground wire, the collecting electrode of the triode Q4 is connected with a +3.3V power supply through the resistor R8 and the infrared transceiving integral transistor D5 in sequence, the other end of the resistor R13 is connected with the base electrode of the triode Q5, the emitting electrode of the triode Q5 is connected with the ground wire, the collecting electrode of the triode Q5 is connected with a +3.3V power supply through the resistor R9 and the infrared transceiving integral transistor D6 in sequence, the other end of the resistor R14 is connected with the base electrode of the triode Q6, the emitting electrode of the triode Q6 is connected with the ground wire, and the collecting electrode of the triode Q6 is connected with a +3.3V power supply through the resistor R10 and the infrared transceiving integral transistor D7 in sequence.

The infrared transceiving integrated tube D1, the infrared transceiving integrated tube D4, the infrared transceiving integrated tube D5, the infrared transceiving integrated tube D6 and the infrared transceiving integrated tube D7 all adopt HXD 5038-120.

Fig. 3 is a circuit connection diagram of an infrared emitting chip KT-003. First VDD is connected to two capacitors C4, C5 in order to make the impedance between the power supply line and ground low, and the power supply is close to the ideal voltage source. The use of the 0.1uF nonpolar capacitor in parallel with the 10uF electrolytic capacitor is because the parasitic inductance of the electrolytic capacitor is large, and the capability of eliminating high-frequency ripples is poor. The parasitic inductance of the non-polar capacitor is small, and the capability of filtering high-frequency ripples is good. However, if the capacity is selected according to the low frequency requirement, the non-polar capacitor has a large volume, high cost, a small volume of the electrolytic capacitor, and a low price of the same capacity. Therefore, two capacitors are connected in parallel.

And a pin Stduy _ LED of the infrared emission chip KT-003 is connected with a pin PA3 of the HT32F52231 singlechip and is used for controlling the infrared emission chip to learn and control the operation of the air conditioner. The pin RXD is connected with a pin PA4 of the HT32F52231 singlechip, and the infrared emission chip receives signals sent by the singlechip. The pin TXD is connected with a pin PA5 of the HT32F52231 singlechip, and the infrared emission chip sends signals to the singlechip. The pins Xin and Xout are connected with a crystal oscillator Y1 of the passive patch 3255, and two capacitors C6 and C7 of the crystal oscillator circuit are used for converting electric energy into other forms of energy. Without these two capacitors, the oscillating part would stop oscillating because there is no loop. The circuit does not work properly.

Connected to the pin IR _ Tx are four sets of IR transceiver integrated circuit, one set of which is described herein, the IR transceiver integrated circuit consisting of the IR transceiver integrated transistors HXD5038-120 (D4), the 1 ohm resistor R7, the 8050NPN transistor Q3, and the 1K resistor R11. The infrared transceiving integrated pipes HXD5038-120 (D4) are mainly used for receiving control signals and sending infrared control signals to control the air conditioner. The 8050NPN type triode Q3 is mainly used for high frequency amplification and signal amplification. The base of the transistor Q3 is connected with a resistor R11 for setting a bias voltage to prevent the signal from being distorted. The emitter is grounded in order to connect the internal emitter region to an external circuit.

Pins IR _ Rx1 and IR _ Rx2 are respectively connected with the collector and the emitter of an 8050NPN type triode Q1, the collector of the Q1 is connected with a 10K resistor R2 which is connected with a +3.3V power supply, and R2 is a bias resistor and supplies proper current to the collector for current limiting. The resistors R3, R4 and R5 form a pi-type filter circuit, a collector and a base of an 8550PNP type triode Q2 are respectively connected with the resistors R3 and R4, and an emitter is connected with a +3.3V power supply. The 1N4148 switching diodes D2 and D3 have unidirectional conductivity in the circuit, so that the D1 infrared transceiving transistors HXD5038-120 can output more stable signals for protecting the circuit, and meanwhile, the signal clamping protection effect is achieved. The resistor R6 plays a role in protecting the D1 infrared transmitting-receiving integral tube HXD5038-120 and the 1N4148 switching diode D2 and preventing breakdown.

As shown in fig. 4, the bidirectional wireless rf circuit employs a bidirectional wireless rf chip BC3601 (U3), an ANT pin of the bidirectional wireless rf chip BC3601 is connected to an antenna, a GND pin of the bidirectional wireless rf chip BC3601 is connected to a ground, a VCC pin of the bidirectional wireless rf chip BC3601 is connected to a +3.3V power supply, the VCC pin is connected to the ground through a capacitor C8 and connected to the ground through a capacitor C9, an SO pin of the bidirectional wireless rf chip BC3601 is connected to a PB7 pin of an HT32F52231 singlechip, an SI pin of the bidirectional wireless rf chip BC3601 is connected to a PA9 pin of the HT32F52231 singlechip, an SCK pin of the bidirectional wireless rf chip BC3601 is connected to a PB3 pin of the HT32F52231 singlechip, an NSS pin of the bidirectional wireless rf chip 360bc 1 is connected to a PB4 pin of the HT32F52231, and a RESET pin of the bidirectional wireless rf chip BC3601 is connected to a PB8 pin of the HT32F52231 singlechip.

Fig. 4 shows a bidirectional wireless FSK/GFSK high-performance rf chip BC3601 circuit, which is mainly connected to a hexi single chip, where the BC3601 has two main wireless transmission modes: the first is a Direct Mode (Direct Mode), data to be transmitted/received can be directly set by the GIO1/GIO2 of the BC 3601; the other is a first-in first-out Mode (FIFO Mode) in which data access is performed through an internal FIFO memory. Each pin of BC3601 has different functions, wherein a RESET pin is connected to a PB8 port of the singlechip and is used for giving a signal to control whether the chip is RESET or not, NSS is connected to a PB4 port of the singlechip and is used for giving a signal to control the reading or writing of the chip, SCK is a clock signal and is connected to a PB3 port of the singlechip, SI and SO are input and output pins of a module which are respectively connected to a PA9 port and a PB7 port and are interfaces for the singlechip and the BC3601 to send and receive data. ANT is the antenna connector, and the antenna is 433 MHz's antenna.

Two capacitors C8, C9 connected in parallel between the power supply and ground in the chip are used to make the impedance between the power supply line and the ground low, and the power supply is close to the ideal voltage source. The use of the 0.1uF nonpolar capacitor in parallel with the 10uF electrolytic capacitor is because the parasitic inductance of the electrolytic capacitor is large, and the capability of eliminating high-frequency ripples is poor. The parasitic inductance of the non-polar capacitor is small, and the capability of filtering high-frequency ripples is good. However, if the capacity is selected according to the low frequency requirement, the non-polar capacitor has a large volume, high cost, a small volume of the electrolytic capacitor, and a low price of the same capacity. Therefore, two capacitors are connected in parallel.

In the embodiment, a bidirectional wireless FSK/GFSK high-performance rf chip BC3601 is used as an intermediate link connected with a cloud. The BC3601 chip is suitable for unlicensed ISMBAD (300 MHz-960 MHz) application below 1 GHz; the IC integrates high-power PA, frequency synthesizer and digital demodulation functions, simplifies peripheral circuits, and has radio frequency characteristics in accordance with ETSI/FCC specifications. The working voltage is 2.0V-3.6V, the transmitting power can be set by a program, and the highest transmitting power can reach +17 dBm; high sensitivity receiving ability, the highest transmission rate reaches 250 kbps; the wireless bidirectional transmitting and receiving system has an ATR (automatic Transmit receive) function, is internally provided with a high-precision low-power-consumption oscillator and has a power-saving mode self-awakening transmitting and receiving function, is suitable for the requirements of low-power-consumption batteries and IoT (internet of things) products, and can be widely applied to wireless bidirectional application products such as intelligent home/security, automobile burglar alarms and industrial/agricultural controllers. Therefore, the BC3601 transceiver chip is adopted by the device as an intermediate connection link between the single chip microcomputer and the cloud.

BC3601 is a wireless transceiver that can be used in Sub-1GHz each ISM band. Time Division Duplex (TDD) is used to transmit and receive signals, and only transmission or reception can be performed at the same time, so a high precision Local Oscillator (LO) is required in both cases. The LO is composed of a Voltage Controlled Oscillator (VCO) and a non-integer phase-locked loop (Fractional-N PLL). When data is transmitted, the data is modulated by an internal digital packet modulator, then passes through a Gaussian Filter (Gaussian Filter) and an integral-differential modulator, is subjected to frequency synthesis, and then is transmitted by an antenna acting on the outside through a built-in high-Power Amplifier (PA). When receiving data, the signal is amplified by an external antenna through a built-in Low Noise Amplifier (LNA), modulated to a lower Intermediate Frequency (IF) through a mixer, and then data is obtained by using an intermediate frequency composite band-pass filter and a signal strength detector and is output through a digital packet demodulator.

The BC3601 is set by an internal control register to perform a function of transmitting/receiving an RF signal. The setting required to be made is the working mode, working frequency, modulation/demodulation signal format, etc. and the way to access the control register is through the SPI interface of BC 3601. The design structure under general conditions must include an antenna, a matching circuit, a BC3601 and an MCU, and the BC3601 sets corresponding control parameters through the MCU, so as to achieve the function of transceiving high frequency signals.

As shown in fig. 5, the power circuit employs a chip HT7533 (U4), a Vin pin of the chip HT7533 is connected to +12V and to a ground through a capacitor C10, a GND pin of the chip HT7533 is connected to a ground, a Vout pin of the chip HT7533 is connected to a ground through a capacitor C11, and the Vout pin is used for outputting +3.3V power.

Fig. 5 is a power supply circuit of the present embodiment, and it can be seen that the circuit is a voltage reduction circuit for reducing voltage from 12V to 3.3V, since the operating voltage of the single chip is 3.3V. And 3.3V can also supply power to the wireless infrared chips KT-003 and BC 3601. The filter capacitors C10 and C11 are arranged between the power supply and the ground to play the roles of energy storage and filtering.

As shown in fig. 6, the signal indicating circuit includes a light emitting diode D8, a resistor R15, a light emitting diode D9 and a resistor R16, a negative electrode of the light emitting diode D8 is connected to a ground, a positive electrode of the light emitting diode D8 is connected to a pin PA1 of the HT32F52231 single chip microcomputer through a resistor R15, a negative electrode of the light emitting diode D9 is connected to the ground, and a positive electrode of the light emitting diode D9 is connected to a pin PA0 of the HT32F52231 single chip microcomputer through a resistor R16.

Fig. 6 shows the indicating lamp circuit of this embodiment, in which LED lamps D8 and D9 are respectively connected in series with 1K resistors R15 and R16 and connected with PA0 and PA1 of the single chip microcomputer. R15 and R16 are current limiting resistors of the light emitting diode, and are connected in series with the light emitting diode for voltage division, so that the light emitting diode is prevented from being thermally damaged or broken down by voltage. The LED indicator light D8 is turned on and off during initial setting operation of the device, and the LED indicator light D9 is turned on and off during normal operation.

The remote air conditioner control device based on closing tai singlechip of this embodiment, what succeed improves traditional air conditioner into more wisdom's air conditioner, lets the user can open own air conditioner anytime and anywhere to can change its mode and temperature, increased user's use and experienced sense, the comfort.

The protection scope of the present invention includes but is not limited to the above embodiments, the protection scope of the present invention is subject to the claims, and any replacement, deformation, and improvement that can be easily conceived by those skilled in the art made by the present technology all fall into the protection scope of the present invention.

Claims (5)

1. The utility model provides a remote air conditioner controlling means based on close tai singlechip which characterized in that: the intelligent air conditioner comprises a HETAI single chip microcomputer control circuit, a bidirectional wireless radio frequency circuit, an infrared transmitting circuit, a signal indicating circuit and a power supply circuit, wherein the bidirectional wireless radio frequency circuit, the infrared transmitting circuit and the signal indicating circuit are all connected with the HETAI single chip microcomputer control circuit;

the HE TAI singlechip control circuit adopts an HT32F52231 singlechip, a VDD pin of the HT32F52231 singlechip is connected with a +3.3 power supply and is connected with a ground wire through a capacitor C1, a VDDA pin of the HT32F52231 singlechip is connected with the +3.3 power supply and is connected with the ground wire through a capacitor C2, a CLDO pin of the HT32F52231 singlechip is connected with the ground wire through a capacitor C3, and a VSS pin of the HT32F52231 singlechip is connected with the ground wire; the PA3 pin, the PA4 pin and the PA5 pin of the HT32F52231 singlechip are all connected with an infrared emission circuit; the PA0 pin and the PA1 pin of the HT32F52231 singlechip are both connected with a signal indicating circuit;

the bidirectional wireless radio frequency circuit adopts a bidirectional wireless radio frequency chip BC3601, an ANT pin of the bidirectional wireless radio frequency chip BC3601 is connected with an antenna, a GND pin of the bidirectional wireless radio frequency chip BC3601 is connected with a ground wire, a VCC pin of the bidirectional wireless radio frequency chip BC3601 is connected with a +3.3V power supply, the VCC pin is connected with the ground wire through a capacitor C8 and is connected with the ground wire through a capacitor C9, an SO pin of the bidirectional wireless radio frequency chip BC3601 is connected with a PB7 pin of an HT32F52231 singlechip, an SI pin of the bidirectional wireless radio frequency chip BC3601 is connected with a9 pin of the HT32F52231 singlechip, an SCK pin of the bidirectional wireless PA BC3601 is connected with a PB3 pin of the HT32F52231 singlechip, an NSS pin of the bidirectional wireless radio frequency chip BC3601 is connected with a PB4 pin of the HT32F52231, and a RESET pin of the bidirectional wireless radio frequency chip BC3601 is connected with a PB8 pin of the HT32F52231 singlechip;

the infrared emission circuit adopts an infrared emission chip KT-003.

2. The remote air-conditioning control device based on the HETAI single chip microcomputer as claimed in claim 1, characterized in that: the power supply circuit adopts a chip HT7533, a Vin pin of the chip HT7533 is connected with a power supply +12V and is connected with a ground wire through a capacitor C10, a GND pin of the chip HT7533 is connected with a ground wire, a Vout pin of the chip HT7533 is connected with a ground wire through a capacitor C11, and the Vout pin is used for outputting a +3.3V power supply.

3. The remote air-conditioning control device based on the HETAI single chip microcomputer as claimed in claim 2, characterized in that: pin 27 of infrared emission chip KT-003 in the infrared emission circuit connects +3.3V power, and pin 27 passes through electric capacity C4 and connects the ground wire, connects the ground wire through electric capacity C5, pin 23 of infrared emission chip KT-003 is connected with pin PA3 of HT32F52231 singlechip, pin 17 of infrared emission chip KT-003 is connected with pin PA5 of HT32F52231 singlechip, pin 16 of infrared emission chip KT-003 is connected with pin PA4 of HT32F52231 singlechip, pin 3 of infrared emission chip KT-003 is connected with crystal oscillator Y1 one end and electric capacity C6 one end simultaneously, pin 4 of infrared emission chip KT-003 is connected with crystal oscillator Y1 other end and electric capacity C7 one end simultaneously, the electric capacity C6 and electric capacity C7 other end all connect the ground wire, pin 2 of infrared emission chip KT-003 connects the ground wire, pin 1 of infrared emission chip KT-003 is connected with the collecting electrode of triode Q1 and the resistance R2's collector simultaneously Connect, the other end of resistance R2 connects the +3.3V power, triode Q1's base is connected with triode Q2's collecting electrode and resistance R3's one end simultaneously, triode Q2's emitter is connected +3.3V power, triode Q2's base is connected with resistance R4 one end and diode D2's positive pole simultaneously, diode D2's negative pole is connected with the negative pole of infrared transceiver transistor D1 through resistance R6, the positive pole of infrared transceiver transistor D1 is connected with the +3.3V power, pin 24 of infrared emission chip KT-003 is connected with triode Q1's emitter, the resistance R3 other end and the one end of resistance R5 simultaneously, the other end of resistance R5 is connected with the resistance R4 other end and the negative pole of diode D3 simultaneously, the positive pole of diode D3 is connected with the +3.3V power, pin 25 of infrared emission chip-003 is connected with resistance R11 simultaneously, One end of a resistor R12, one end of a resistor R13 and one end of a resistor R14 are connected, the other end of the resistor R11 is connected with the base electrode of a triode Q3, the emitter electrode of a triode Q3 is connected with the ground wire, the collector electrode of a triode Q3 is connected with a +3.3V power supply through the resistor R7 and an infrared transceiving integral transistor D4 in sequence, the other end of the resistor R12 is connected with the base electrode of the triode Q4, the emitting electrode of the triode Q4 is connected with the ground wire, the collecting electrode of the triode Q4 is connected with a +3.3V power supply through the resistor R8 and the infrared transceiving integral transistor D5 in sequence, the other end of the resistor R13 is connected with the base electrode of the triode Q5, the emitting electrode of the triode Q5 is connected with the ground wire, the collecting electrode of the triode Q5 is connected with a +3.3V power supply through the resistor R9 and the infrared transceiving integral transistor D6 in sequence, the other end of the resistor R14 is connected with the base electrode of the triode Q6, the emitting electrode of the triode Q6 is connected with the ground wire, and the collecting electrode of the triode Q6 is connected with a +3.3V power supply through the resistor R10 and the infrared transceiving integral transistor D7 in sequence.

4. The remote air-conditioning control device based on the HETAI single chip microcomputer as claimed in claim 3, characterized in that: the infrared transceiving integrated tube D1, the infrared transceiving integrated tube D4, the infrared transceiving integrated tube D5, the infrared transceiving integrated tube D6 and the infrared transceiving integrated tube D7 all adopt HXD 5038-120.

5. The remote air-conditioning control device based on the HETAI single chip microcomputer as claimed in claim 4, characterized in that: the signal indicating circuit comprises a light emitting diode D8, a resistor R15, a light emitting diode D9 and a resistor R16, wherein the negative electrode of the light emitting diode D8 is connected with the ground wire, the positive electrode of the light emitting diode D8 is connected with a PA1 pin of the HT32F52231 single chip microcomputer through a resistor R15, the negative electrode of the light emitting diode D9 is connected with the ground wire, and the positive electrode of the light emitting diode D9 is connected with a PA0 pin of the HT32F52231 single chip microcomputer through a resistor R16.

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