CN214539881U - 一种半导体器件研发用半导体检测设备 - Google Patents
一种半导体器件研发用半导体检测设备 Download PDFInfo
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- CN214539881U CN214539881U CN202120800602.0U CN202120800602U CN214539881U CN 214539881 U CN214539881 U CN 214539881U CN 202120800602 U CN202120800602 U CN 202120800602U CN 214539881 U CN214539881 U CN 214539881U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000012827 research and development Methods 0.000 title claims abstract description 8
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- 238000011161 development Methods 0.000 claims 6
- 239000003381 stabilizer Substances 0.000 claims 1
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Effective date of registration: 20220811 Address after: 100000 0146, floor 3, building 1, yard 1, Shuangyu South Street, Shunyi District, Beijing Patentee after: Beijing Ketai optical core semiconductor equipment Technology Co.,Ltd. Address before: 221400 room 529-1, Beisan District, No. 88, Jiangsu Road, Xinyi Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: Xuzhou Duanjin Testing Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 101399 North Wenhuaying Village, Shunyi District, Beijing (No. 1, Shunchuang 2nd Road) Patentee after: Beijing Ruihuayu Semiconductor Equipment Co.,Ltd. Country or region after: China Address before: 100000 0146, floor 3, building 1, yard 1, Shuangyu South Street, Shunyi District, Beijing Patentee before: Beijing Ketai optical core semiconductor equipment Technology Co.,Ltd. Country or region before: China |
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Effective date of registration: 20240315 Address after: 528248, No. 16 Guangming Avenue, New Light Source Industrial Base, Shishan Town, Nanhai District, Foshan City, Guangdong Province (Residence application, multiple photos for one address) Patentee after: Foshan Xince Technology Co.,Ltd. Country or region after: China Address before: 101399 North Wenhuaying Village, Shunyi District, Beijing (No. 1, Shunchuang 2nd Road) Patentee before: Beijing Ruihuayu Semiconductor Equipment Co.,Ltd. Country or region before: China |