CN214503763U - Piezoelectric coefficient measuring device - Google Patents
Piezoelectric coefficient measuring device Download PDFInfo
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- CN214503763U CN214503763U CN202120143099.6U CN202120143099U CN214503763U CN 214503763 U CN214503763 U CN 214503763U CN 202120143099 U CN202120143099 U CN 202120143099U CN 214503763 U CN214503763 U CN 214503763U
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Abstract
The utility model discloses a piezoelectric coefficient measuring device, which comprises a bottom plate; the sample placing table is fixed on the bottom plate, is used for placing a test sample, and is internally provided with a heating device; the temperature controller is connected with the heating device in the sample placing table and can control the heating device; a force applying device which applies pressure to the sample by contacting the sample placed on the sample placing table; the signal processing device is connected with the force application device, can be connected with the output end of the test sample, and receives and processes data signals from the force application device and the test sample; the utility model discloses a set up sample heating device and temperature controller, just so realized heating and the control by temperature change to the sample, thereby make piezoelectric coefficient measuring device can measure the piezoelectric coefficient of sample at the changeable condition of temperature.
Description
Technical Field
The utility model belongs to piezoelectric coefficient measures the field, in particular to piezoelectric coefficient measuring device.
Background
As shown in fig. 7, a testing apparatus adopted in a currently-used measuring method includes an electromagnetic drive 1, electrodes 2, a reference sample 3, an insulating body 4, and a probe 5, specifically, a sample 6 to be measured is fixed between the two electrodes 5, an alternating signal of the electromagnetic drive 1 vibrates, so that the magnitude of a force applied to the sample 6 to be measured changes regularly, and a relationship between the magnitude of an electrical signal generated by the sample 6 to be measured in a capacitor C1 and the magnitude of an electrical signal generated by the reference sample 3 with a known piezoelectric coefficient in a capacitor C2 is compared to obtain the piezoelectric coefficient of the sample 1, and generally C1 is set to C2.
However, because the piezoelectric coefficients and the thermal expansion coefficients of different materials vary with temperature, the signal ratio between the reference sample wafer and the measured sample changes unknowingly at different temperatures, and this piezoelectric measuring device can only measure the d33 piezoelectric coefficient of the material at normal temperature, but cannot measure the d33 piezoelectric coefficient of the material under the variable temperature condition.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a piezoelectric coefficient measuring device, it adopts following technical scheme.
A piezoelectric coefficient measuring apparatus comprising: a base plate; the sample placing table is fixed on the bottom plate, is used for placing a test sample, and is internally provided with a heating device; the temperature controller is connected with the heating device in the sample placing table and can control the heating device; a force applying device which applies pressure to the sample by contacting the sample placed on the sample placing table; and the signal processing device is connected with the force application device, can be connected with the output end of the test sample, and receives and processes the data signals from the force application device and the test sample.
Compared with the prior art, the utility model discloses in piezoelectric coefficient measuring device has beneficial effect does: the utility model discloses in piezoelectric coefficient measuring device includes: a base plate; the sample placing table is fixed on the bottom plate, is used for placing a test sample, and is internally provided with a heating device; the temperature controller is connected with the heating device in the sample placing table and can control the heating device; a force applying device which applies pressure to the sample by contacting the sample placed on the sample placing table; the signal processing device is connected with the force application device, can be connected with the output end of the test sample, and receives and processes data signals from the force application device and the test sample; the utility model discloses a set up sample heating device and temperature controller, just so realized heating and the control by temperature change to the sample, thereby make piezoelectric coefficient measuring device can measure the piezoelectric coefficient of sample at the changeable condition of temperature.
Further, the piezoelectric coefficient measuring apparatus further includes a probe provided on the sample placement stage.
Further, the force application device comprises: the fixing frame is fixed on the bottom plate, and a linear guide rail is arranged on the fixing frame; the stress application connecting piece is arranged on the linear guide rail in a sliding manner, a pressure sensor is arranged on the stress application connecting piece, and the pressure sensor is connected with the signal processing device and feeds back stress application data signals of the stress application device to the signal processing device; the stress application probe assembly is arranged on the stress application connecting piece; the driving device is connected with the stress application connecting piece and drives the stress application connecting piece to move up and down along the linear guide rail so as to drive the stress application probe assembly to move up and down and further realize the pressure application on the sample; the design can uniformly transfer the pressure to the sample, and the pressure sensor is arranged to monitor the pressure applying condition in real time, so that the piezoelectric coefficient measuring device can measure more accurately.
Further, the force probe assembly comprises: the stress application probe mounting piece is fixed on the stress application connecting piece and is connected with the pressure sensor; and the stress application probe body is fixed on the stress application probe mounting piece.
Furthermore, a contact structure is arranged on the stress application probe body, and the contact structure is in contact with the sample and applies pressure to the sample; the contact structure can be used as an electrical signal output while applying a force, so that a measurement can be carried out even if the area of the second electrode is smaller than the area of the contact portion of the contact structure.
Further, the contact surface of the contact structure and the sample is a plane.
Further, the driving device is a servo motor; the servo motor is more accurately controlled, so that the pressure of the force applying device can be more accurately controlled.
Further, the piezoelectric coefficient measuring device further comprises a position adjusting device; the position adjusting device is fixed on the bottom plate, the sample placing table is fixed on the position adjusting device, and the position adjusting device can adjust the transverse position and the longitudinal position of the sample placing table.
Further, the piezoelectric coefficient measuring apparatus further includes a shield case, the shield case including: a support plate fixed to the base plate; the shielding cover is fixed on the support plate through a hinge; the shielding cover is opened and closed through a hinge; the sample placement stage can be covered when the shielding cover is closed; the structure can be matched with external electromagnetic interference, so that the measurement result of the piezoelectric coefficient measuring device is more accurate.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without undue limitation to the invention. In the drawings:
FIG. 1 is a schematic connection diagram of the piezoelectric measuring device for measuring piezoelectric thin film material in this embodiment;
FIG. 2 is a schematic structural diagram of a piezoelectric film material in this embodiment;
FIG. 3 is a schematic connection diagram of the piezoelectric measuring device for measuring a piezoelectric ceramic material according to the present embodiment;
FIG. 4 is a schematic structural diagram of a piezoelectric ceramic material in this embodiment;
FIG. 5 is a schematic structural diagram of the piezoelectric measuring device in this embodiment;
FIG. 6 is a schematic structural diagram of the force applying device in this embodiment;
fig. 7 is a schematic structural diagram of a test apparatus using a conventional measurement method.
Detailed Description
The technical solution provided by the present invention is explained in more detail with reference to fig. 1-7.
A piezoelectric coefficient measuring apparatus comprising: a base plate 100; a sample placing stage 200 fixed on the base plate 100, for placing a test sample, and having a heating device 230 installed therein; a temperature controller connected to the heating device 230 in the sample stage 200 and capable of controlling the heating device 230; a force applying device 300 for applying a pressure to the sample by contacting the sample placed on the sample placement stage 200; and a signal processing device 600 connected to the force application device 300 and capable of being connected to the output of the test sample, and receiving and processing the data signals from the force application device 300 and the test sample.
Further, the force application device 300 includes: a fixing frame 310 fixed on the base plate 100, wherein a linear guide rail 311 is arranged on the fixing frame 310; a force application connector 320, which is slidably disposed on the linear guide 311, wherein a pressure sensor 321 is disposed on the force application connector 320, the pressure sensor 321 is connected to the signal processing device 600, and feeds back a force application data signal of the force application device 300 to the signal processing device 600; a force probe assembly disposed on the force attachment connector 320; the driving device 340 is connected with the force application connecting piece 320, and the driving device 340 drives the force application connecting piece 320 to move up and down along the linear guide rail 311, so as to drive the force application probe assembly to move up and down, and further realize the pressure application on the sample; the design can transfer the pressure to the sample uniformly, and the pressure sensor 321 is arranged to monitor the pressure applied by the sample in real time, so that the measurement of the piezoelectric coefficient measuring device is more accurate.
Further, the force probe assembly comprises: a force application probe mounting unit 331 fixed to the force application connector 320 and connected to the pressure sensor 321; and a force probe body 332 fixed to the force probe attachment 331.
Further, a contact structure 333 is arranged on the force application probe body 332, and the contact structure 333 is in contact with the sample and applies pressure to the sample; the contact structure 333 can be used as an electrical signal output terminal while applying a force, so that measurement can be performed even if the area of the second electrode is smaller than the area of the contact portion of the contact structure 333.
Further, the contact surface of the contact structure 333 and the sample is a plane.
Further, the driving device 340 is a servo motor; the servo motor is more precisely controlled and therefore the pressure applied by the force means 300 is more precisely controlled.
Further, the piezoelectric coefficient measuring apparatus further includes a position adjusting apparatus 400; wherein the position adjusting means 400 is fixed to the base plate 100, the sample placement stage 200 is fixed to the position adjusting means 400, and the position adjusting means can adjust the lateral position and the longitudinal position of the sample placement stage 200; the position of the sample placing table is adjusted to enable the measured part of the sample to correspond to the contact structure of the force applying device.
Further, the piezoelectric coefficient measuring apparatus further includes a shield case, the shield case including: a strip 510 fixed to the base plate 100; a shield cover 520 fixed to the stay 510 by a hinge; the shielding cover 520 is opened and closed through a hinge; the sample holding stage 200 can be covered when the shield cover 520 is closed; the structure can be matched with external electromagnetic interference, so that the measurement result of the piezoelectric coefficient measuring device is more accurate.
Further, the piezoelectric coefficient measuring apparatus further includes a probe 210 provided on the sample placement stage; when the measurement structure is the piezoelectric thin film material shown in fig. 2, the probe 210 needs to be used, and it should be noted that the piezoelectric thin film material includes a substrate 001, a first electrode 002, a piezoelectric thin film layer 003, and a second electrode 004; the first electrode and the second electrode are used as output ends of the sample. The measuring connection diagram is shown in fig. 1, the probe 210 on one side is conductively connected with the first electrode 002 of the piezoelectric thin film material, the probe 210 on the other side is conductively connected with the second electrode 004 of the piezoelectric thin film material, and the signal processing device 600 is respectively connected with the two probes 210 through wires to form a conductive loop. Meanwhile, a set pressure is applied to the force application device 300 on the piezoelectric film material, the contact structure 333 in the force application device 300 transfers the pressure to the sample placed on the sample placing table 200, meanwhile, the temperature controller 240 controls the sample heating device 230 to heat the sample to a set temperature, the signal processing device 600 records the magnitude of the applied force and the change of the charge amount formed after the piezoelectric film material is stressed, and then the signal processing device 600 processes the received data signal, so that the d33 piezoelectric coefficient of the sample at the set temperature is obtained.
When the measurement structure is the piezoceramic material shown in fig. 4, the probe 210 is not needed, and it should be noted that the piezoceramic material includes a first electrode 010, a piezoceramic 020, and a second electrode 030; as shown in fig. 3, a piezoceramic material is placed on the sample placement stage, the sample placement stage is a conductive material member, the second electrode of the piezoceramic material is electrically connected with the sample placement stage, then the contact structure 333 in the force application device 300 is also electrically connected with the first electrode 010 in the piezoceramic material, and the signal processing device 600 is respectively connected with the sample placement stage and the contact structure 333 through wires to form a conductive loop. Meanwhile, a set pressure is applied to the force application device 300 on the piezoceramic material, the contact structure 333 in the force application device 300 transfers the pressure to the sample placed on the sample placing table 200, meanwhile, the temperature controller 240 controls the sample heating device 230 to heat the sample to a set temperature, the signal processing device 600 records the magnitude of the applied force and the change of the charge amount formed after the piezoceramic material is stressed, and then the signal processing device 600 processes the received data signal, so that the d33 piezoelectric coefficient of the piezoceramic material at the set temperature is obtained.
The piezoelectric coefficient measuring apparatus in this embodiment includes a base plate 100; a sample placing stage 200 fixed on the base plate 100, for placing a test sample, and having a heating device 230 installed therein; a temperature controller connected to the heating device 230 in the sample stage 200 and capable of controlling the heating device 230; a force applying device 300 for applying a pressure to the sample by contacting the sample placed on the sample placement stage 200; a signal processing device 600 connected to the force application device 300, such that the force application device 300, the probe 210, the signal processing device 600 and the test sample form a conductive loop, so that the signal processing device 600 can obtain the data signal of the sample while obtaining the force application data; the utility model discloses a set up sample heating device 230 and temperature controller 240, just so realized the heating and the control by temperature change to the sample, thereby make piezoelectric coefficient measuring device can measure the piezoelectric coefficient of sample at the changeable condition of temperature.
In the description of the present invention, it is to be understood that the terms "center", "left", "right", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are used merely for convenience of description and simplification of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the scope of the present invention.
If the terms "first," "second," etc. are used herein to define parts, those skilled in the art will recognize that: the use of "first" and "second" is merely for convenience in describing the invention and to simplify the description, and the words are not intended to have a special meaning unless otherwise stated.
The present invention is not limited to the above embodiment, and if various modifications or variations of the present invention do not depart from the spirit and scope of the present invention, they are intended to be covered if they fall within the scope of the claims and the equivalent technology of the present invention.
Claims (9)
1. A piezoelectric coefficient measuring apparatus, comprising:
a base plate;
the sample placing table is fixed on the bottom plate, is used for placing a test sample, and is internally provided with a heating device;
the temperature controller is connected with the heating device in the sample placing table and can control the heating device;
a force applying device which applies pressure to the sample by contacting the sample placed on the sample placing table;
and the signal processing device is connected with the force application device, can be connected with the output end of the test sample, and receives and processes the data signals from the force application device and the test sample.
2. The piezoelectric coefficient measuring apparatus according to claim 1, further comprising a probe provided on the sample placement stage.
3. The piezoelectric coefficient measuring apparatus according to claim 1, wherein the force applying means includes:
the fixing frame is fixed on the bottom plate, and a linear guide rail is arranged on the fixing frame;
the stress application connecting piece is arranged on the linear guide rail in a sliding manner, a pressure sensor is arranged on the stress application connecting piece, and the pressure sensor is connected with the signal processing device and feeds back stress application data signals of the stress application device to the signal processing device;
the stress application probe assembly is arranged on the stress application connecting piece;
and the driving device is connected with the stress application connecting piece and drives the stress application connecting piece to move up and down along the linear guide rail, so that the stress application probe assembly is driven to move up and down, and the pressure application on the sample is realized.
4. The apparatus of claim 3, wherein the force probe assembly comprises:
the stress application probe mounting piece is fixed on the stress application connecting piece and is connected with the pressure sensor;
and the stress application probe body is fixed on the stress application probe mounting piece.
5. The device of claim 4, wherein the force probe body is provided with a contact structure, and the contact structure is in contact with the sample and applies pressure to the sample.
6. A device according to claim 5, wherein the contact surface of the contact structure with the sample is planar.
7. A piezoelectric coefficient measuring apparatus according to claim 3, wherein the driving means is a servo motor.
8. The piezoelectric coefficient measuring device according to claim 1, further comprising a position adjusting device;
the position adjusting device is fixed on the bottom plate, the sample placing table is fixed on the position adjusting device, and the position adjusting device can adjust the transverse position and the longitudinal position of the sample placing table.
9. The piezoelectric coefficient measuring device according to claim 1, further comprising a shield case, the shield case including:
a support plate fixed to the base plate;
the shielding cover is fixed on the support plate through a hinge;
the shielding cover is opened and closed through a hinge; the sample holding stage can be covered when the shield cover is closed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120143099.6U CN214503763U (en) | 2021-01-19 | 2021-01-19 | Piezoelectric coefficient measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120143099.6U CN214503763U (en) | 2021-01-19 | 2021-01-19 | Piezoelectric coefficient measuring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214503763U true CN214503763U (en) | 2021-10-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120143099.6U Active CN214503763U (en) | 2021-01-19 | 2021-01-19 | Piezoelectric coefficient measuring device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214503763U (en) |
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2021
- 2021-01-19 CN CN202120143099.6U patent/CN214503763U/en active Active
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