CN214490145U - Mechanochemical grinds frock - Google Patents
Mechanochemical grinds frock Download PDFInfo
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- CN214490145U CN214490145U CN202120549944.XU CN202120549944U CN214490145U CN 214490145 U CN214490145 U CN 214490145U CN 202120549944 U CN202120549944 U CN 202120549944U CN 214490145 U CN214490145 U CN 214490145U
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Abstract
The utility model relates to a mechanochemical grinding tool, which comprises a vacuum chuck, an annular limiting structure and a grinding pad; the annular limiting structure is arranged on the vacuum chuck and takes the central line as a reference; the outer diameter of the annular limiting structure is equal to that of the vacuum chuck; the grinding pad is arranged in the annular limiting structure; the diameter of the grinding pad is equal to the inner diameter of the annular limiting structure; a first groove, a second groove and a third groove are formed in the surface of the vacuum chuck corresponding to the grinding pad; the diameter of the first groove is less than that of the grinding pad; the diameter of the second groove is smaller than that of the first groove; the diameter of the third groove is less than that of the second groove; the depth of the first groove is less than that of the second groove and less than that of the third groove; and the side wall of the second groove is provided with a knurling pattern. The problem of the eccentricity of the grinding pad in the mechanical chemical grinding process is solved, the surface of the wafer obtained by grinding is more uniform, and a film layer obtained after the wafer is subjected to sputtering coating has good performance.
Description
Technical Field
The utility model relates to a mechanochemical grinds the field, concretely relates to mechanochemical's grinding frock.
Background
Wafers are commonly used as sputtering targets in sputter coating operations, and the surface properties of the wafers generally affect the properties of the coating obtained during sputtering, and are typically treated by polishing or mechanochemical polishing.
For example, CN109300773A discloses a surface treatment method for a wafer, which comprises the following steps: providing a wafer, wherein charges are accumulated on the surface of the wafer; step two, carrying out illumination treatment on the surface of the wafer, and reducing or eliminating charges accumulated on the surface of the wafer through the illumination treatment; and step three, carrying out chemical solution treatment on the front surface of the wafer, and eliminating defects formed on the front surface of the wafer in the chemical solution treatment process by utilizing the characteristic that the charges accumulated on the surface of the wafer after the illumination treatment are reduced or eliminated. The method can eliminate or reduce the charges accumulated on the front surface of the wafer before the front surface chemical solution treatment of the wafer, thereby preventing the accumulated charges from generating high-energy reaction with the chemical solution in the chemical solution treatment process and eliminating the defects formed by the high-energy reaction, improving the yield of products and having the characteristic of low process cost.
CN108807217A discloses a wafer surface processing apparatus and method, where the wafer surface processing apparatus includes a worktable for carrying a wafer, the wafer has a surface structure, a pulse laser for generating a laser beam, and a water tank having an opening, a liquid in the water tank is ejected from the opening, and the laser beam passes through the opening and is projected onto the surface structure together with the liquid. The wafer surface treatment device and the method generate laser beams through the pulse laser, the laser beams are used for stripping a surface layer structure on the wafer, liquid is sprayed out from an opening of the water tank, and byproducts are taken away through liquid flushing; the utility model discloses in, on the surface layer structure of wafer is projected together to spun liquid in making the laser beam through this opening and this opening, can realize taking away the accessory substance in peeling off surface layer structure and washout, can form reuse's wafer through wafer surface treatment, reduced manufacturing cost.
CN107749392A discloses a surface treatment method of a semiconductor wafer, comprising the following steps: (1) placing a semiconductor wafer in a reaction chamber with reaction gas, reacting the reaction gas with oxide on the surface of the semiconductor wafer to form a reaction product, and performing at least twice annealing treatment on the semiconductor wafer to decompose and remove the reaction product; (2) mechanically polishing a semiconductor layer of the semiconductor wafer, wherein the polishing pressure of the polishing process is 20-35kpa, cleaning the polished surface, and performing rotary drying and drying treatment; (3) the surface treatment by the developing solution is to spray the developing solution on the semiconductor wafer, and the method comprises the steps of rotary spraying, infiltrating, rotary spraying and infiltrating for multiple times; (4) and cleaning the semiconductor wafer at least twice by using deionized water.
However, in the existing polishing process, due to the fact that the polishing pad gradually generates an eccentric phenomenon along with the progress of polishing, the surface performance of the obtained wafer can generate regional differences, the uniformity of a coating film obtained by sputtering coating is poor, and the service life of the wafer after treatment is obviously shortened.
SUMMERY OF THE UTILITY MODEL
In view of the problems existing in the prior art, an object of the present invention is to provide a mechanochemical polishing tool, which solves the problem of eccentricity of the polishing pad in mechanochemical polishing by redesigning the vacuum chuck and the polishing pad matching structure, and simultaneously enables the polishing to obtain a more uniform wafer surface, so that the film obtained by the wafer after sputter coating has good performance.
To achieve the purpose, the utility model adopts the following technical proposal:
the utility model provides a mechanochemical grinding tool, which comprises a vacuum chuck, an annular limiting structure and a grinding pad;
the annular limiting structure is arranged on the vacuum chuck and takes the central line as a reference;
the outer diameter of the annular limiting structure is equal to that of the vacuum chuck;
the grinding pad is arranged in the annular limiting structure;
the diameter of the grinding pad is equal to the inner diameter of the annular limiting structure;
a first groove, a second groove and a third groove are formed in the surface of the vacuum chuck corresponding to the grinding pad;
the diameter of the first groove is less than that of the grinding pad;
the diameter of the second groove is less than that of the first groove;
the diameter of the third groove is less than that of the second groove;
the depth of the first groove is less than that of the second groove and less than that of the third groove;
the side wall of the second groove is provided with a knurled pattern, and the depth of the knurled pattern is 3-5 mm;
and the surface of the grinding pad is provided with a convex structure matched with the first groove, the second groove and the third groove.
Through redesign to vacuum chuck and grinding pad cooperation structure, solved the off-centre problem that exists at the grinding pad in mechanochemical grinding, also make simultaneously that the grinding obtains the wafer surface more homogeneous for the film layer that the wafer obtained after sputter coating has good performance.
The utility model discloses in, the central line of first recess, second recess and third recess coincides mutually, grinding pad and annular limit structure and vacuum chuck's central line coincides mutually.
The utility model discloses in, first recess, second recess and third recess degree of depth are equal to the height of the lateral wall that corresponds.
In the present invention, the depth of the pattern is 3-5mm, for example, 3mm, 3.1mm, 3.2mm, 3.3mm, 3.4mm, 3.5mm, 3.6mm, 3.7mm, 3.8mm, 3.9mm, 4mm, 4.1mm, 4.2mm, 4.3mm, 4.4mm, 4.5mm, 4.6mm, 4.7mm, 4.8mm, 4.9mm or 5mm, but not limited to the enumerated values, and other unrecited values in the range are also applicable.
In a preferred embodiment of the present invention, the diameter of the first groove is 70 to 73% of the diameter of the polishing pad, and may be, for example, 70%, 70.1%, 70.2%, 70.3%, 70.4%, 70.5%, 70.6%, 70.7%, 70.8%, 70.9%, 71%, 71.1%, 71.2%, 71.3%, 71.4%, 71.5%, 71.6%, 71.7%, 71.8%, 71.9%, 72%, 72.1%, 72.2%, 72.3%, 72.4%, 72.5%, 72.6%, 72.7%, 72.8%, 72.9%, or 73%, but is not limited to the above-mentioned values, and other values not mentioned in this range are also applicable.
As a preferred embodiment of the present invention, the diameter of the second groove is 62 to 65% of the diameter of the polishing pad, and may be, for example, 62%, 62.1%, 62.2%, 62.3%, 62.4%, 62.5%, 62.6%, 62.7%, 62.8%, 62.9%, 63%, 63.1%, 63.2%, 63.3%, 63.4%, 63.5%, 63.6%, 63.7%, 63.8%, 63.9%, 64%, 64.1%, 64.2%, 64.3%, 64.4%, 64.5%, 64.6%, 64.7%, 64.8%, 64.9%, or 65%, but is not limited to the above-mentioned values, and other values not mentioned in the range are also applicable.
As a preferred embodiment of the present invention, the diameter of the third groove is 45 to 50% of the diameter of the polishing pad, for example, 45%, 45.1%, 45.2%, 45.3%, 45.4%, 45.5%, 45.6%, 45.7%, 45.8%, 45.9%, 46%, 46.1%, 46.2%, 46.3%, 46.4%, 46.5%, 46.6%, 46.7%, 46.8%, 46.9%, 47%, 47.1%, 47.2%, 47.3%, 47.4%, 47.5%, 47.6%, 47.7%, 47.8%, 47.9%, 48%, 48.1%, 458.2%, 48.3%, 48.4%, 48.5%, 48.6%, 48.7%, 48.8%, 48.9%, 49%, 49.1%, 49.2%, 49.3%, 49.4%, 49.5%, 49.6%, 49.7%, 49.8%, 49.9%, or 50%, and other values are not limited to the same ranges.
In a preferred embodiment of the present invention, the depth of the first groove is 2 to 3% of the thickness of the vacuum chuck, and may be, for example, 2%, 2.1%, 2.2%, 2.3%, 2.4%, 2.5%, 2.6%, 2.7%, 2.8%, 2.9%, or 3%, but not limited to the above-mentioned values, and other values not mentioned in the above-mentioned range are also applicable.
In a preferred embodiment of the present invention, the depth of the second groove is 3 to 6% of the thickness of the vacuum chuck, and may be, for example, 3%, 3.1%, 3.2%, 3.3%, 3.4%, 3.5%, 3.6%, 3.7%, 3.8%, 3.9%, 4%, 4.1%, 4.2%, 4.3%, 4.4%, 4.5%, 4.6%, 4.7%, 4.8%, 4.9%, 5%, 5.1%, 5.2%, 5.3%, 5.4%, 5.5%, 5.6%, 5.7%, 5.8%, 5.9%, or 6%, but not limited to the above-mentioned values, and other values not mentioned in the range are also applicable.
As a preferred embodiment of the present invention, the depth of the third groove is 7 to 11% of the thickness of the vacuum chuck, for example, 7%, 7.1%, 7.2%, 7.3%, 7.4%, 7.5%, 7.6%, 7.7%, 7.8%, 7.9%, 8%, 8.1%, 8.2%, 8.3%, 8.4%, 8.5%, 8.6%, 8.7%, 8.8%, 8.9%, 9%, 9.1%, 9.2%, 9.3%, 9.4%, 9.5%, 9.6%, 9.7%, 9.8%, 9.9%, 10%, 10.1%, 10.2%, 10.3%, 10.4%, 10.5%, 10.6%, 10.7%, 10.8%, 10.9%, or 11%, etc., but not limited to the values listed, and other values not listed in this range are also applicable.
In a preferred embodiment of the present invention, the depth of the pattern is 4 to 4.5mm, and may be, for example, 4mm, 4.02mm, 4.04mm, 4.06mm, 4.08mm, 4.1mm, 4.12mm, 4.14mm, 4.16mm, 4.18mm, 4.2mm, 4.22mm, 4.24mm, 4.26mm, 4.28mm, 4.3mm, 4.32mm, 4.34mm, 4.36mm, 4.38mm, 4.4mm, 4.42mm, 4.44mm, 4.46mm, 4.48mm, or 4.5mm, but not limited to the above-mentioned values, and other values not mentioned in the range are also applicable.
As the utility model discloses preferred technical scheme, the decorative pattern is prismoid shape decorative pattern.
As the utility model discloses preferred technical scheme, the grinding pad with first recess with be provided with the inverted triangle-shaped decorative pattern on the corresponding side of third recess.
Compared with the prior art, the utility model discloses following beneficial effect has at least:
through redesign to vacuum chuck and grinding pad cooperation structure, solved the off-centre problem that exists at the grinding pad in mechanochemical grinding, also make simultaneously that the grinding obtains the wafer surface more homogeneous for the film layer that the wafer obtained after sputter coating has good performance. Furthermore, the concentric effect of the grinding pad and the vacuum chuck can be enhanced by adding the patterns at specific positions, so that the grinding effect is further improved, and the film obtained by sputtering coating has more excellent performance.
Drawings
Fig. 1 is a cross-sectional view of a vacuum chuck in a mechanochemical grinding tool provided in embodiment 1 of the present invention;
fig. 2 is a top view of a vacuum chuck in a mechanochemical polishing tool according to embodiment 1 of the present invention.
In the figure: 1-first groove, 2-second groove, 3-third groove, 4-side wall of second groove.
The present invention will be described in further detail below. However, the following examples are only simple examples of the present invention, and do not represent or limit the scope of the present invention, which is defined by the appended claims.
Detailed Description
To better illustrate the present invention, facilitating the understanding of the technical solutions of the present invention, typical but not limiting embodiments of the present invention are as follows:
example 1
The embodiment provides a mechanochemical grinding tool, as shown in fig. 1 and 2, the mechanochemical grinding tool comprises a vacuum chuck, an annular limiting structure and a grinding pad;
the annular limiting structure is arranged on the vacuum chuck and takes the central line as a reference;
the outer diameter of the annular limiting structure is equal to that of the vacuum chuck;
the grinding pad is arranged in the annular limiting structure;
the diameter of the grinding pad is equal to the inner diameter of the annular limiting structure;
a first groove 1, a second groove 2 and a third groove 3 are arranged on the surface of the vacuum chuck corresponding to the grinding pad;
the diameter of the first groove 1 is less than that of the grinding pad;
the diameter of the second groove 2 is less than that of the first groove 1;
the diameter of the third groove 3 is less than that of the second groove 2;
the depth of the first groove 1 is less than that of the second groove 2 and less than that of the third groove 3;
a knurling pattern is arranged on the side wall 4 of the second groove, and the depth of the knurling pattern is 4 mm;
the surface of the grinding pad is provided with a convex structure matched with the first groove 1, the second groove 2 and the third groove 3.
Example 2
The embodiment provides a mechanical and chemical grinding tool which comprises a vacuum chuck, an annular limiting structure and a grinding pad;
the annular limiting structure is arranged on the vacuum chuck and takes the central line as a reference;
the outer diameter of the annular limiting structure is equal to that of the vacuum chuck;
the grinding pad is arranged in the annular limiting structure;
the diameter of the grinding pad is equal to the inner diameter of the annular limiting structure;
a first groove 1, a second groove 2 and a third groove 3 are arranged on the surface of the vacuum chuck corresponding to the grinding pad;
the diameter of the first groove 1 is less than that of the grinding pad;
the diameter of the second groove 2 is less than that of the first groove 1;
the diameter of the third groove 3 is less than that of the second groove 2;
the depth of the first groove 1 is less than that of the second groove 2 and less than that of the third groove 3;
a knurled pattern is arranged on the side wall 4 of the second groove, and the depth of the pattern is 3 mm;
the surface of the grinding pad is provided with a convex structure matched with the first groove 1, the second groove 2 and the third groove 3.
The diameter of the first groove 1 is 72% of the diameter of the polishing pad.
The diameter of the second groove 2 is 62% of the diameter of the polishing pad.
The diameter of the third groove 3 is 45% of the diameter of the polishing pad.
Example 3
The embodiment provides a mechanical and chemical grinding tool which comprises a vacuum chuck, an annular limiting structure and a grinding pad;
the annular limiting structure is arranged on the vacuum chuck and takes the central line as a reference;
the outer diameter of the annular limiting structure is equal to that of the vacuum chuck;
the grinding pad is arranged in the annular limiting structure;
the diameter of the grinding pad is equal to the inner diameter of the annular limiting structure;
a first groove 1, a second groove 2 and a third groove 3 are arranged on the surface of the vacuum chuck corresponding to the grinding pad;
the diameter of the first groove 1 is less than that of the grinding pad;
the diameter of the second groove 2 is less than that of the first groove 1;
the diameter of the third groove 3 is less than that of the second groove 2;
the depth of the first groove 1 is less than that of the second groove 2 and less than that of the third groove 3;
a knurling pattern is arranged on the side wall 4 of the second groove, and the depth of the knurling pattern is 5 mm;
the surface of the grinding pad is provided with a convex structure matched with the first groove 1, the second groove 2 and the third groove 3.
The diameter of the first groove 1 is 73% of the diameter of the polishing pad.
The diameter of the second groove 2 is 65% of the diameter of the polishing pad.
The diameter of the third groove 3 is 50% of the diameter of the polishing pad.
The depth of the first groove 1 is 2% of the thickness of the vacuum chuck.
The depth of the second groove 2 is 3% of the thickness of the vacuum chuck.
The depth of the third groove 3 is 7% of the thickness of the vacuum chuck.
Example 4
The embodiment provides a mechanical and chemical grinding tool which comprises a vacuum chuck, an annular limiting structure and a grinding pad;
the annular limiting structure is arranged on the vacuum chuck and takes the central line as a reference;
the outer diameter of the annular limiting structure is equal to that of the vacuum chuck;
the grinding pad is arranged in the annular limiting structure;
the diameter of the grinding pad is equal to the inner diameter of the annular limiting structure;
a first groove 1, a second groove 2 and a third groove 3 are arranged on the surface of the vacuum chuck corresponding to the grinding pad;
the diameter of the first groove 1 is less than that of the grinding pad;
the diameter of the second groove 2 is less than that of the first groove 1;
the diameter of the third groove 3 is less than that of the second groove 2;
the depth of the first groove 1 is less than that of the second groove 2 and less than that of the third groove 3;
a knurling pattern is arranged on the side wall 4 of the second groove, and the depth of the knurling pattern is 4 mm;
the surface of the grinding pad is provided with a convex structure matched with the first groove 1, the second groove 2 and the third groove 3.
The diameter of the first groove 1 is 70% of the diameter of the polishing pad.
The diameter of the second groove 2 is 63% of the diameter of the polishing pad.
The diameter of the third groove 3 is 47% of the diameter of the polishing pad.
The depth of the first groove 1 is 3% of the thickness of the vacuum chuck.
The depth of the second groove 2 is 6% of the thickness of the vacuum chuck.
The depth of the third groove 3 is 11% of the thickness of the vacuum chuck.
The patterns are frustum pyramid patterns.
And inverted triangular patterns are arranged on the side surfaces of the grinding pad corresponding to the first groove and the third groove.
When being applied to the grinding with the grinding frock of above-mentioned mechanochemistry, owing to reformed transform the cooperation structure, avoided the eccentric problem of grinding pad among the grinding process, through the redesign to vacuum chuck and grinding pad cooperation structure promptly, solved the eccentric problem that exists at the grinding pad in mechanochemistry grinding, also make simultaneously to grind and obtain that the wafer surface is more homogeneous for the film layer that the wafer obtained after sputter coating has good performance.
The applicant states that the present invention is described by the above embodiments, but the present invention is not limited to the above detailed structural features, i.e. the present invention can be implemented only by relying on the above detailed structural features. It should be clear to those skilled in the art that any modifications to the present invention, to the equivalent replacement of selected parts and the addition of auxiliary parts, the selection of specific modes, etc., all fall within the scope of protection and disclosure of the present invention.
The above detailed description describes the preferred embodiments of the present invention, but the present invention is not limited to the details of the above embodiments, and the technical idea of the present invention can be within the scope of the present invention, and can be right to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and in order to avoid unnecessary repetition, the present invention does not need to describe any combination of the features.
In addition, various embodiments of the present invention can be combined arbitrarily, and the disclosed content should be regarded as the present invention as long as it does not violate the idea of the present invention.
Claims (10)
1. A mechanochemical grinding tool is characterized by comprising a vacuum chuck, an annular limiting structure and a grinding pad;
the annular limiting structure is arranged on the vacuum chuck and takes the central line as a reference;
the outer diameter of the annular limiting structure is equal to that of the vacuum chuck;
the grinding pad is arranged in the annular limiting structure;
the diameter of the grinding pad is equal to the inner diameter of the annular limiting structure;
a first groove, a second groove and a third groove are formed in the surface of the vacuum chuck corresponding to the grinding pad;
the diameter of the first groove is less than that of the grinding pad;
the diameter of the second groove is less than that of the first groove;
the diameter of the third groove is less than that of the second groove;
the depth of the first groove is less than that of the second groove and less than that of the third groove;
the side wall of the second groove is provided with a knurled pattern, and the depth of the knurled pattern is 3-5 mm;
and the surface of the grinding pad is provided with a convex structure matched with the first groove, the second groove and the third groove.
2. The mechanochemical polishing tool of claim 1 wherein the diameter of the first recess is 70-73% of the diameter of the polishing pad.
3. The mechanochemical polishing tool of claim 1 or 2, wherein the diameter of the second recess is 62-65% of the diameter of the polishing pad.
4. The mechanochemical polishing tool of claim 1 wherein the diameter of the third recess is 45-50% of the diameter of the polishing pad.
5. The mechanochemical grinding tool of claim 1 or 4 wherein the depth of the first recess is 2-3% of the thickness of the vacuum chuck.
6. The mechanochemical grinding tool of claim 1 wherein the depth of the second recess is 3-6% of the thickness of the vacuum chuck.
7. The mechanochemical grinding tool of claim 1 or 6 wherein the depth of the third recess is 7-11% of the thickness of the vacuum chuck.
8. The mechanochemical grinding tool of claim 1 wherein the depth of the pattern is 4-4.5 mm.
9. The mechanochemical grinding tool of claim 1 or 8 wherein the pattern is a truncated pyramid pattern.
10. The mechanochemical grinding tool of claim 9 wherein the grinding pad has an inverted triangular pattern on the side corresponding to the first and third grooves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120549944.XU CN214490145U (en) | 2021-03-17 | 2021-03-17 | Mechanochemical grinds frock |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120549944.XU CN214490145U (en) | 2021-03-17 | 2021-03-17 | Mechanochemical grinds frock |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214490145U true CN214490145U (en) | 2021-10-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120549944.XU Active CN214490145U (en) | 2021-03-17 | 2021-03-17 | Mechanochemical grinds frock |
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|---|---|
| CN (1) | CN214490145U (en) |
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2021
- 2021-03-17 CN CN202120549944.XU patent/CN214490145U/en active Active
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