CN214456888U - Hydrogen circulation system for polycrystalline silicon production - Google Patents
Hydrogen circulation system for polycrystalline silicon production Download PDFInfo
- Publication number
- CN214456888U CN214456888U CN202120454051.7U CN202120454051U CN214456888U CN 214456888 U CN214456888 U CN 214456888U CN 202120454051 U CN202120454051 U CN 202120454051U CN 214456888 U CN214456888 U CN 214456888U
- Authority
- CN
- China
- Prior art keywords
- hydrogen
- reduction furnace
- purification device
- storage device
- purification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines
Landscapes
- Silicon Compounds (AREA)
- Hydrogen, Water And Hydrids (AREA)
Abstract
The application provides a hydrogen circulation system for polycrystalline silicon production. The hydrogen circulation system includes: the first hydrogen circulation subsystem is a first hydrogen purification device connected with a first hydrogen storage device in the first hydrogen circulation subsystem; the first hydrogen purification device is connected with a second hydrogen circulation subsystem and a regenerated gas recovery device, and the regenerated gas recovery device is connected with the first hydrogen storage device and used for conveying recovered hydrogen to the first hydrogen storage device. The hydrogen circulation system is suitable for the production of solar grade polycrystalline silicon, electronic grade polycrystalline silicon and zone melting grade polycrystalline silicon, and can provide hydrogen sources meeting different requirements for the production of the solar grade polycrystalline silicon, the electronic grade polycrystalline silicon and the zone melting grade polycrystalline silicon respectively.
Description
Technical Field
The application belongs to the field of polycrystalline silicon production, and particularly relates to a hydrogen circulation system for polycrystalline silicon production.
Background
In recent years, on one hand, with the popularization of solar grade polysilicon, the price of solar grade polysilicon is also continuously low; on the other hand, in order to ensure the safety of the national electronic information industry, existing polysilicon enterprises respond to the national call and start to enter the production field of electronic grade polysilicon and zone melting grade polysilicon. Under the circumstance, in order to reduce investment, a polysilicon production enterprise generally newly builds an electronic grade polysilicon device and a zone melting grade polysilicon production device in an original solar grade polysilicon factory, so that the situation that solar grade polysilicon, electronic grade polysilicon and zone melting grade polysilicon coexist in a single polysilicon production factory can occur.
Hydrogen is a very important raw material in the production of polycrystalline silicon, and a large amount of hydrogen is used. The hydrogen used for producing solar grade polysilicon, electronic grade polysilicon and zone melting grade polysilicon has different requirements. At present, a plurality of independent hydrogen circulation systems are adopted to respectively provide hydrogen for different polysilicon production systems, and the equipment investment is high.
SUMMERY OF THE UTILITY MODEL
The application provides a hydrogen circulation system suitable for coexistence of solar-grade polycrystalline silicon, electronic-grade polycrystalline silicon and zone-melting-grade polycrystalline silicon, which can not only meet production requirements, but also effectively reduce investment and has good application prospect.
The present application provides a hydrogen circulation system for polysilicon production, comprising:
-a first hydrogen circulation sub-system comprising
A first reduction furnace, a second reduction furnace and a third reduction furnace,
a first chlorosilane separation device, a second chlorosilane separation device,
a first hydrogen chloride separation device, a second hydrogen chloride separation device,
a first hydrogen adsorption purification device configured such that an impurity content of a hydrogen stream after being treated by the first hydrogen adsorption purification device is less than 100 ppm; a first hydrogen storage device;
the first reduction furnace, the first chlorosilane separation device, the first hydrogen chloride separation device, the first hydrogen adsorption and purification device and the first hydrogen storage device are sequentially connected, and the first hydrogen storage device is also connected with the first reduction furnace;
-a first hydrogen purification device connected to the first hydrogen storage device, the first hydrogen purification device being configured such that the content of impurities in the hydrogen stream treated by the first hydrogen purification device is less than 100 ppb;
-a second hydrogen recycle subsystem connected to the first hydrogen purification device, the second hydrogen recycle subsystem comprising:
a second reduction furnace, a first reduction furnace and a second reduction furnace,
a second chlorosilane separation device is arranged on the first chlorosilane separation device,
a second hydrogen chloride separation device is arranged on the first hydrogen chloride separation device,
a second hydrogen adsorption purification device,
a second hydrogen purification device,
a second hydrogen storage device;
wherein a second hydrogen storage device in the second hydrogen circulation subsystem is connected with the first hydrogen purification device; the second reduction furnace, the second chlorosilane separation device, the second hydrogen chloride separation device, the second hydrogen adsorption and purification device, the second hydrogen purification device and the second hydrogen storage device are sequentially connected, and the second hydrogen storage device is also connected with the second reduction furnace;
-a regeneration gas recovery device connected to the first hydrogen storage device for delivering recovered hydrogen to the first hydrogen storage device.
Further, the hydrogen circulation system further includes:
a third hydrogen purification device coupled to the second hydrogen storage device, the third hydrogen purification device configured such that a hydrogen stream processed by the third hydrogen purification device has less than 1ppb of impurities;
a third hydrogen storage device connected to the third hydrogen purification device; and
a third reduction furnace connected to the third hydrogen storage device,
the third reducing furnace is also connected with the second chlorosilane separation device.
Further, the hydrogen circulation system further includes:
a third hydrogen purification unit connected to the second hydrogen recycle subsystem;
a third hydrogen circulation subsystem coupled to the third hydrogen purification device, the third hydrogen circulation subsystem comprising:
a third reduction furnace, a first reduction furnace and a second reduction furnace,
a third trichlorosilane separating device, a second trichlorosilane separating device,
a third hydrogen trichloride separating device, a second hydrogen trichloride separating device,
a third hydrogen adsorption purification device, a second hydrogen adsorption purification device,
a fourth gas purification device configured such that an impurity content in a hydrogen stream processed by the fourth gas purification device is less than 1ppb,
a third hydrogen storage device;
wherein a third hydrogen storage device in the third hydrogen circulation subsystem is connected with the third hydrogen purification device; the third reduction furnace, the third trichlorosilane separation device, the third hydrogen trichloride separation device, the third hydrogen adsorption and purification device, the fourth hydrogen purification device and the third hydrogen storage device are sequentially connected, and the third hydrogen storage device is further connected with the third reduction furnace.
Further, the hydrogen circulation system further comprises a hydrogen supplementing system, and the hydrogen supplementing system is connected with at least one of the first hydrogen storage device, the second hydrogen storage device and the third hydrogen storage device.
Further, the regeneration gas recovery device is also connected with the first hydrogen adsorption purification device, the first hydrogen purification device, the second hydrogen adsorption purification device and the second hydrogen purification device.
Further, the regeneration gas recovery device is also connected with an exhaust gas collecting device.
Further, the first reduction furnace is a solar grade polycrystalline silicon reduction furnace.
Further, the second reduction furnace is an electronic grade polycrystalline silicon reduction furnace.
Further, the third reduction furnace is a zone-melting-level polycrystalline silicon reduction furnace.
The application has the advantages that:
(1) the hydrogen circulation system is suitable for the production of solar grade polycrystalline silicon, electronic grade polycrystalline silicon and zone melting grade polycrystalline silicon, and can provide hydrogen sources meeting different requirements for the production of the solar grade polycrystalline silicon, the electronic grade polycrystalline silicon and the zone melting grade polycrystalline silicon respectively.
(2) The hydrogen circulation subsystems are independent from each other, so that the hydrogen quality can be ensured, and the subsystems are connected with each other, so that the stable operation of the whole hydrogen system can be ensured.
(3) The method is suitable for the production of expanding electronic grade polycrystalline silicon and zone-melting grade polycrystalline silicon of solar grade polycrystalline silicon production enterprises, can fully utilize old devices, and saves investment.
Drawings
FIG. 1 is a schematic view of one embodiment of a hydrogen circulation system of the present application;
FIG. 2 is a schematic view of another embodiment of a hydrogen circulation system of the present application.
Wherein the reference numerals are as follows:
101. 201, 301: a first reduction furnace, a second reduction furnace and a third reduction furnace
102. 202, 302: first chlorosilane separation device, second chlorosilane separation device and second chlorosilane separation device
103. 203, 303: first hydrogen chloride separating device, second hydrogen chloride separating device and third hydrogen chloride separating device
104. 204, 304: a first hydrogen adsorption purification device, a second hydrogen adsorption purification device and a third hydrogen adsorption purification device
105. 205, 305: first hydrogen storage device, second hydrogen storage device and third hydrogen storage device
110. 210, 310, 410: a first hydrogen purification device, a second hydrogen purification device, a third hydrogen purification device, and a fourth hydrogen purification device
111: hydrogen supplemental system
510: regenerated gas recovery device
520: exhaust gas recovery device
Detailed Description
The technical solution of the present application is further explained below according to specific embodiments. The scope of protection of the present application is not limited to the following examples, which are set forth for illustrative purposes only and do not limit the present application in any way.
As shown in fig. 1 and 2, the hydrogen circulation system for polysilicon production comprises a plurality of hydrogen circulation subsystems, wherein the hydrogen circulation subsystems are independent from each other and can meet the requirements of the subsystems on the hydrogen quality, and meanwhile, the subsystems are connected with each other, so that the stable operation of the hydrogen system can be ensured. In fig. 1 and 2, arrows indicate the gas flow directions when the hydrogen circulation system of the present application is in operation, and S10, S11, and the like indicate the respective gas flows.
The hydrogen circulation system for polysilicon production of the present application comprises a first hydrogen circulation sub-system comprising: a first reduction furnace 101, a first chlorosilane separation device 102, a first hydrogen chloride separation device 103, a first hydrogen adsorption purification device 104, and a first hydrogen storage device 105; the first reduction furnace 101, the first chlorosilane separation device 102, the first hydrogen chloride separation device 103, the first hydrogen adsorption and purification device 104, and the first hydrogen storage device 105 are sequentially connected, and the first hydrogen storage device 105 is further connected with the first reduction furnace 101.
In one embodiment, the first reduction furnace 101 is a solar grade polycrystalline silicon reduction furnace, and solar grade polycrystalline silicon can be produced in the first reduction furnace 101 using a raw material such as a hydrogen gas flow S12 from the first hydrogen storage device 105. Meanwhile, the tail gas S10 of the first reduction furnace 101 sequentially passes through the first chlorosilane separation device 102, the first hydrogen chloride separation device 103 and the first hydrogen adsorption purification device 104, and hydrogen in the tail gas is recovered, so that the hydrogen treated by the first hydrogen adsorption purification device 104 can meet the requirement that the content of impurities in the hydrogen is less than 100ppm, and is conveyed to the first hydrogen storage device 105 by hydrogen flow S11, thereby forming a cycle.
The first chlorosilane separation apparatus 102 may use known equipment, for example, the chlorosilane separation apparatus mainly includes a leaching tower, a cooler, a compressor, and the like, and is used to separate and recover the chlorosilane component, so as to significantly reduce the content of the chlorosilane component in the gas discharged from the chlorosilane separation apparatus. After the tail gas S10 from the first reduction furnace 101 passes through the first chlorosilane separation device 102, chlorosilane components therein can be separated and recovered as much as possible.
The first hydrogen chloride separation apparatus 103 may also use known equipment, for example, it mainly includes an absorption column, a desorption column, a heat exchanger, a cooler, a pump, and the like, for separating and recovering the hydrogen chloride component in the gas stream to be treated. In the first hydrogen chloride separation apparatus 103, it is generally required that the recovery rate of hydrogen chloride in the first hydrogen chloride separation apparatus 103 is > 99% to recover the hydrogen chloride component as much as possible, thereby reducing the hydrogen chloride content in the hydrogen gas fed to the first hydrogen adsorption purification apparatus 104 and helping to control the B, P content in the recovered hydrogen gas.
The primary function of the first hydrogen adsorption purification device 104 is to separate chlorosilane in hydrogen by means of adsorption, and simultaneously limit the content of B, P, N-containing impurities in the recovered hydrogen to a certain range. Therefore, the adsorption generally adopts a conventional activated carbon adsorption mode, and the activated carbon can be coal activated carbon or coconut shell activated carbon or can be used simultaneously; meanwhile, in order to reduce the content of nitrogen (mixed during the replacement of nitrogen by the hydrogen discharged from the reduction furnace) in the recovered hydrogen, an adsorbent capable of adsorbing nitrogen, such as a molecular sieve, is usually placed on the upper portion of the activated carbon adsorbent near the outlet of the adsorbed gas. There are two types of structure for adsorbers: an adsorber with an internal heat exchange structure can be adopted for the purposes of saving energy and reducing the operation cost; secondly, the other adsorber structure is a hollow cylindrical adsorber without a heat exchange structure (the structure form is like a storage tank), and the adoption of the adsorber has the advantage of being suitable for the large-scale equipment.
As described above, the hydrogen gas stream S11 after being processed by the first hydrogen adsorption purification device 104 can reach the requirement that "the impurity content of hydrogen gas is less than 100 ppm", so as to enter the first hydrogen storage device 105 and be available for the first reduction furnace 101.
The hydrogen circulation system for polysilicon production of the present application further includes a first hydrogen purification device 110 connected to the first hydrogen storage device 105. The first hydrogen purification device 110 can further purify the hydrogen gas stream S13 from the first hydrogen storage device 105 to reduce the impurity content therein, so as to meet the requirement that the impurity content of hydrogen gas is less than 100 ppb. The first hydrogen purification apparatus 110 may use a known device, for example, a device packed with a molecular sieve for removing impurities such as B, P, C, O, N from hydrogen gas to reduce the impurity content of hydrogen gas to a desired limit. The equipment and piping in the hydrogen purification apparatus are preferably made of 316L stainless steel.
The hydrogen stream S24 passing through the first hydrogen purification device 110 may be supplied to a second hydrogen recycling subsystem connected to the first hydrogen purification device 110, and may be used as a source and supplement of hydrogen in the second hydrogen recycling subsystem.
The second hydrogen circulation subsystem comprises: a second reducing furnace 201, a second chlorosilane separation device 202, a second hydrogen chloride separation device 203, a second hydrogen adsorption purification device 204, a second hydrogen purification device 210, and a second hydrogen storage device 205; wherein, the second hydrogen storage device 205 in the second hydrogen circulation subsystem is connected with the first hydrogen purification device 110. The second reduction furnace 201, the second chlorosilane separation device 202, the second hydrogen chloride separation device 203, the second hydrogen adsorption and purification device 204, the second hydrogen purification device 210, and the second hydrogen storage device 205 are connected in sequence, and the second hydrogen storage device 205 is further connected to the second reduction furnace 201.
The second reduction furnace 201 is an electronic grade polycrystalline silicon reduction furnace, and electronic grade polycrystalline silicon can be produced in the second reduction furnace 201 using a raw material such as a hydrogen gas flow S22 from the second hydrogen gas storage 205. The off-gas S20 from the second reduction furnace 201 is processed sequentially by the second chlorosilane separation device 202, the second hydrogen chloride separation device 203, the second hydrogen adsorption purification device 204, the second hydrogen purification device 210, and the second hydrogen storage device 205 to be sent to the second hydrogen storage device 205, thereby forming a circulation.
The second hydrogen circulation subsystem is provided with a second hydrogen purification device 210 compared with the first hydrogen circulation subsystem, and the second hydrogen circulation subsystem is used for further purifying the hydrogen obtained by the treatment of the second hydrogen adsorption purification device 204, so that the content of impurities in the hydrogen flow S21 obtained by the treatment of the second hydrogen purification device 210 is less than 100 ppb. The hydrogen stream S24 processed by the second hydrogen purification apparatus 210 may be sent to the second hydrogen storage apparatus 205. In addition, the second chlorosilane separator 202, the second hydrogen chloride separator 203, and the second hydrogen adsorption purifier 204 in the second hydrogen circulation subsystem may be the same as the first chlorosilane separator 102, the first hydrogen chloride separator 103, and the first hydrogen adsorption purifier 104 in the first hydrogen circulation subsystem, respectively, in terms of material, structure, and the like.
The purification requirements of the second hydrogen purification apparatus 210 are the same as those of the first hydrogen purification apparatus 110, and the "impurity content of hydrogen gas is less than 100 ppb" is required. The second hydrogen purification apparatus 210 may be the same as the first hydrogen purification apparatus 110 in terms of material, structure, and the like.
In one embodiment, the hydrogen circulation system of the present application may further comprise a third hydrogen circulation sub-system. The third hydrogen circulation subsystem also comprises a chlorosilane separation device, a hydrogen chloride separation device, a hydrogen adsorption and purification device and a hydrogen purification device. However, the third hydrogen circulation sub-system may be arranged in various ways.
First, as shown in FIG. 1, the third hydrogen recycling sub-system may share a portion of the same equipment as the second hydrogen recycling sub-system. For example, the hydrogen circulation system of the present application further includes: a third hydrogen purification unit 310 connected to the second hydrogen storage unit 205; a third hydrogen storage means 305 connected to the third hydrogen purification means 310; and a third reducing furnace 301 connected to the third hydrogen storage device 305, wherein the third reducing furnace 301 is further connected to the second chlorosilane separation device 202.
The third reduction furnace 301 is a zone-melting-stage polysilicon reduction furnace, and can produce zone-melting-stage polysilicon in the reduction furnace using a raw material such as hydrogen gas flow S32 from the third hydrogen storage device 305. The used hydrogen S32 is obtained by further purifying the hydrogen from the hydrogen circulation subsystem (electronic grade polysilicon hydrogen system) by the third hydrogen purification device 310, and the impurity content in the purified hydrogen is less than 1 ppb. In this manner, the reduction off-gas of the zone-melting-stage polysilicon reduction furnace (third reduction furnace 301) is not separately provided with a hydrogen recovery device, but is introduced into an electronic-grade polysilicon hydrogen recovery device (second chlorosilane separation device 202, second hydrogen chloride separation device 203, second hydrogen adsorption purification device 204, second hydrogen purification device 210, etc.) for treatment. The hydrogen flow S23 from the second hydrogen storage device 205 enters the third hydrogen purification device 310 for processing, and the impurity content in the purified hydrogen flow S30 is required to be less than 1 ppb; and then the third hydrogen storage device 305 supplies the hydrogen flow S32 meeting the requirement to the zone melting level polysilicon reducing furnace (the third reducing furnace 301). The off-gas stream S31 from the zone melting-stage polysilicon reduction furnace (third reduction furnace 301) is fed to an electronic-grade polysilicon hydrogen recovery apparatus, and is treated by a second chlorosilane separation apparatus 202, a second hydrogen chloride separation apparatus 203, a second hydrogen adsorption purification apparatus 204, a second hydrogen purification apparatus 210, a third hydrogen purification apparatus 310, and the like, thereby forming a cycle.
Second, as shown in fig. 2, the hydrogen circulation system may further include: a third hydrogen purification unit 310 connected to the second hydrogen recycle subsystem; a third hydrogen recycling subsystem coupled to the third hydrogen purification unit 310, the third hydrogen recycling subsystem comprising: a third reduction furnace 301, a third trichlorosilane separation device 302, a third hydrogen trichloride separation device 303, a third hydrogen adsorption purification device 304, a third hydrogen purification device 410, and a third hydrogen storage device 305; wherein the third hydrogen storage device 305 of the third hydrogen recycling subsystem is connected to the third hydrogen purification device 310; the third reduction furnace 301, the third trichlorosilane separating device 302, the third hydrogen chloride separating device 303, the third hydrogen adsorbing and purifying device 304, the third hydrogen purifying device 410, and the third hydrogen storage device 305 are sequentially connected, and the third hydrogen storage device 305 is further connected to the third reduction furnace 310.
The third reduction furnace 301 is a zone-melting-level polysilicon reduction furnace, the hydrogen S32 used in the furnace is obtained by further purifying the hydrogen from the hydrogen circulation subsystem (electronic-level polysilicon hydrogen system) by a third hydrogen purification device 310, and the content of impurities in the purified hydrogen is less than 1 ppb. In this way, the hydrogen gas stream S23 from the second hydrogen storage device 205 enters the third hydrogen purification device 310 for processing, and the content of impurities in the purified hydrogen gas stream S30 is required to be less than 1 ppb; and then the third hydrogen storage device 305 supplies the hydrogen flow S32 meeting the requirement to the zone melting level polysilicon reducing furnace (the third reducing furnace 301). The tail gas flow S31 of the zone melting level polysilicon reduction furnace (third reduction furnace 301) is processed by a third trichlorosilane separation device 302, a third hydrogen trichloride separation device 303, a third hydrogen adsorption purification device 304, a fourth hydrogen purification device 410 and the like, and the hydrogen flow S33 output by the fourth hydrogen purification device 410 also meets the requirement that the content of impurities is less than 1ppb and is conveyed to a third hydrogen storage device 305, thereby forming a cycle.
In the above, the purification requirements of the third hydrogen purification apparatus 310 and the fourth hydrogen purification apparatus 410 are the same, and both of them meet the requirement that "the impurity content of hydrogen is less than 1 ppb". The third hydrogen purification apparatus 310 and the fourth hydrogen purification apparatus 410 may use known equipment, for example, equipment packed with molecular sieves for removing impurities such as B, P, C, O, N from hydrogen gas to reduce the impurity content of hydrogen gas to a desired limit. The equipment and piping in the hydrogen purification apparatus are preferably made of 316LEP stainless steel or the like.
Compared with the first mode and the second mode, the first mode is preferable because the amount of the reduction tail gas generated by the zone-melting-stage polysilicon reduction furnace (the third reduction furnace 301) is generally very small, and the content of the impurities in the reduction tail gas is similar to that in the reduction tail gas generated by the electronic-grade polysilicon reduction furnace (the second reduction furnace 201), so that the combination treatment is suitable, and the equipment investment can be saved.
It should be noted that, in actual production, because of consumption and discharge of hydrogen in the whole polysilicon plant, hydrogen is generally required to be supplemented from the outside to the hydrogen system of the plant. In one embodiment, the hydrogen circulation system further comprises a hydrogen replenishment system 111, and the hydrogen replenishment system 111 may be connected to at least one of the first hydrogen storage device 105, the second hydrogen storage device 205, and the third hydrogen storage device 305. However, since the quality requirement of solar grade hydrogen is relatively low, the external hydrogen supplement can generally meet the requirement, and therefore, the external hydrogen supplement is often supplemented into a solar grade hydrogen recovery system, and the external hydrogen supplement does not need to be purified to meet the higher requirement. Therefore, it is preferable that the first hydrogen storage device 105 is also connected to the hydrogen replenishment system 111 so that the hydrogen stream S15 can be replenished to the first hydrogen storage device 105 through the hydrogen replenishment system 111. The quality requirement of the externally supplemented hydrogen flow S15 is consistent with the quality requirement of the hydrogen flow S11 after being processed by the first hydrogen adsorption purification device 104, and the requirement that the impurity content of the hydrogen is less than 100ppm is met.
Of course, the second hydrogen storage device 205 may also be directly connected to an external hydrogen make-up system for replenishing the second hydrogen circulation subsystem with consumed hydrogen. However, the quality requirement of the externally supplemented hydrogen stream is relatively high, and the requirement that the impurity content of the hydrogen is less than 100ppb is met.
Of course, the third hydrogen storage device 305 may also be directly connected to an external hydrogen make-up system for supplying the third hydrogen circulation subsystem with the consumed hydrogen. However, the quality of the externally supplemented hydrogen stream is more demanding, and the requirement "the impurity content of hydrogen is less than 1 ppb" is to be met.
However, from the viewpoint of cost and economy, it is preferable that the first hydrogen storage device 105 is connected to the hydrogen replenishing system 111, and in this case, the quality requirement of the externally replenished hydrogen stream is the minimum, and it is only necessary to meet the requirement that "the impurity content of hydrogen is less than 100 ppm".
In order to recover hydrogen as much as possible, reduce exhaust gas emissions, and the like, the hydrogen circulation system further includes a regeneration gas recovery device 510. The regeneration gas recovery unit 510 can collect and process the regeneration gas containing hydrogen in the whole hydrogen circulation system. The regeneration gas recovery device 510 may be connected to the first hydrogen adsorption purification device 104, the first hydrogen purification device 110, the second hydrogen adsorption purification device 204, the second hydrogen purification device 210, the third hydrogen purification device 310, and the optional third hydrogen adsorption purification device 304 and the fourth hydrogen purification device 410, and collects the regeneration gas S40 generated by the first hydrogen adsorption purification device 104, the regeneration gas S42 generated by the first hydrogen purification device 110, the regeneration gas S41 generated by the second hydrogen adsorption purification device 204, the regeneration gas S43 generated by the second hydrogen purification device 210, the regeneration gas S44 generated by the third hydrogen purification device 310, and the regeneration gas S46 generated by the optional third hydrogen adsorption purification device 304 and the regeneration gas S47 generated by the fourth hydrogen purification device 410. These regeneration gases are combined and processed so that the recovered hydrogen gas meets the quality requirements of the recycle hydrogen gas for solar grade polysilicon production, and may be recycled to the first hydrogen storage device 105 in hydrogen stream S14. In the regeneration gas recovery unit 510, the regeneration gas input thereto may be processed in a "compression, condensation, adsorption" manner, so as to recover hydrogen and recycle to the first hydrogen storage device 105 in the hydrogen stream S14. And the impurity stream S45 discharged from the regeneration gas recovery device 510 may be delivered to the effluent gas collection device 520. The impurity stream S45 is not suitable for being recycled into the hydrogen circulation system and needs to be discharged from the hydrogen circulation system because it carries all impurities adsorbed and separated during the hydrogen recovery process in the production of solar grade polysilicon and the production of electronic grade polysilicon. S45 is not generally subjected to emptying treatment, and can be collected as a raw material of a silicon tetrachloride hydrogenation device, or as a raw material of a trichlorosilane synthesis device, or as a raw material of white carbon black.
Each hydrogen circulation subsystem in the hydrogen circulation system of the application can be independently and circularly operated and can also be circularly operated at the same time. Valves may be provided in some of the connecting lines as needed to control the manner in which the various hydrogen recirculation subsystems operate. For example, valves may be provided between the first hydrogen storage device and the first hydrogen purification device, and closing these valves may allow the first hydrogen circulation subsystem (solar grade polycrystalline silicon hydrogen system) and the second hydrogen circulation subsystem (electronic grade polycrystalline silicon hydrogen system) to operate separately; by opening the valves, the first hydrogen circulation subsystem (solar-grade polysilicon hydrogen system) and the second hydrogen circulation subsystem (electronic-grade polysilicon hydrogen system) can be operated cooperatively, and the first hydrogen storage device of the first hydrogen circulation subsystem (solar-grade polysilicon hydrogen system) replenishes the second hydrogen circulation subsystem (electronic-grade polysilicon hydrogen system) with lost hydrogen.
It should be noted by those skilled in the art that the embodiments described herein are merely exemplary and that various other substitutions, alterations, and modifications may be made within the scope of the present application. Thus, the present application is not limited to the above-described embodiments, but only by the claims.
Claims (9)
1. A hydrogen circulation system for polysilicon production, the hydrogen circulation system comprising:
-a first hydrogen circulation subsystem comprising:
a first reduction furnace, a second reduction furnace and a third reduction furnace,
a first chlorosilane separation device, a second chlorosilane separation device,
a first hydrogen chloride separation device, a second hydrogen chloride separation device,
a first hydrogen adsorption purification device configured such that an impurity content of a hydrogen stream after being treated by the first hydrogen adsorption purification device is less than 100 ppm;
a first hydrogen storage device;
the first reduction furnace, the first chlorosilane separation device, the first hydrogen chloride separation device, the first hydrogen adsorption and purification device and the first hydrogen storage device are sequentially connected, and the first hydrogen storage device is also connected with the first reduction furnace;
-a first hydrogen purification device connected to the first hydrogen storage device, the first hydrogen purification device being configured such that the content of impurities in the hydrogen stream treated by the first hydrogen purification device is less than 100 ppb;
-a second hydrogen recycle subsystem connected to the first hydrogen purification device, the second hydrogen recycle subsystem comprising:
a second reduction furnace, a first reduction furnace and a second reduction furnace,
a second chlorosilane separation device is arranged on the first chlorosilane separation device,
a second hydrogen chloride separation device is arranged on the first hydrogen chloride separation device,
a second hydrogen adsorption purification device,
a second hydrogen purification device,
a second hydrogen storage device;
wherein a second hydrogen storage device in the second hydrogen circulation subsystem is connected with the first hydrogen purification device; the second reduction furnace, the second chlorosilane separation device, the second hydrogen chloride separation device, the second hydrogen adsorption and purification device, the second hydrogen purification device and the second hydrogen storage device are sequentially connected, and the second hydrogen storage device is also connected with the second reduction furnace;
-a regeneration gas recovery device connected to the first hydrogen storage device for delivering recovered hydrogen to the first hydrogen storage device.
2. The hydrogen circulation system according to claim 1, further comprising:
a third hydrogen purification device coupled to the second hydrogen storage device, the third hydrogen purification device configured such that a hydrogen stream processed by the third hydrogen purification device has less than 1ppb of impurities;
a third hydrogen storage device connected to the third hydrogen purification device; and
a third reduction furnace connected to the third hydrogen storage device,
the third reducing furnace is also connected with the second chlorosilane separation device.
3. The hydrogen circulation system according to claim 1, further comprising:
a third hydrogen purification device connected to the second hydrogen storage device;
a third hydrogen circulation subsystem coupled to the third hydrogen purification device, the third hydrogen circulation subsystem comprising:
a third reduction furnace, a first reduction furnace and a second reduction furnace,
a third trichlorosilane separating device, a second trichlorosilane separating device,
a third hydrogen trichloride separating device, a second hydrogen trichloride separating device,
a third hydrogen adsorption purification device, a second hydrogen adsorption purification device,
a fourth gas purification device configured such that the level of impurities in the hydrogen stream treated by the fourth gas purification device is less than 1 ppb;
a third hydrogen storage device;
wherein a third hydrogen storage device in the third hydrogen circulation subsystem is connected with the third hydrogen purification device; the third reduction furnace, the third trichlorosilane separation device, the third hydrogen trichloride separation device, the third hydrogen adsorption and purification device, the fourth hydrogen purification device and the third hydrogen storage device are sequentially connected, and the third hydrogen storage device is further connected with the third reduction furnace.
4. A hydrogen circulation system according to claim 2 or 3, further comprising a hydrogen replenishment system connected to at least one of the first hydrogen storage device, the second hydrogen storage device and the third hydrogen storage device.
5. The hydrogen circulation system according to claim 1, wherein the regeneration gas recovery device is further connected to the first hydrogen adsorption purification device, the first hydrogen purification device, the second hydrogen adsorption purification device, and the second hydrogen purification device.
6. The hydrogen circulation system according to claim 1, wherein the regeneration gas recovery device is further connected with an effluent gas collection device.
7. The hydrogen circulation system of claim 1, wherein the first reduction furnace is a solar grade polycrystalline silicon reduction furnace.
8. The hydrogen circulation system of claim 1, wherein the second reduction furnace is an electronic grade polysilicon reduction furnace.
9. A hydrogen circulation system according to claim 2 or 3, wherein the third reduction furnace is a zone-melting-grade polycrystalline silicon reduction furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120454051.7U CN214456888U (en) | 2021-03-02 | 2021-03-02 | Hydrogen circulation system for polycrystalline silicon production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120454051.7U CN214456888U (en) | 2021-03-02 | 2021-03-02 | Hydrogen circulation system for polycrystalline silicon production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214456888U true CN214456888U (en) | 2021-10-22 |
Family
ID=78152123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120454051.7U Active CN214456888U (en) | 2021-03-02 | 2021-03-02 | Hydrogen circulation system for polycrystalline silicon production |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214456888U (en) |
-
2021
- 2021-03-02 CN CN202120454051.7U patent/CN214456888U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8778061B2 (en) | Hydrogen gas recovery system and hydrogen gas separation and recovery method | |
| CN101377376B (en) | Method for recovering tail gas generated by polycrystalline silicon production | |
| CN108534463B (en) | Deep purification method and system for polycrystalline silicon reduction tail gas | |
| US20120097027A1 (en) | Method and system for purifying biogas for extracting methane | |
| CN101638233B (en) | Dry method recovery technique of trichlorosilane synthetic tail gas | |
| US20200190613A1 (en) | Plant and method for the thermal treatment of solids | |
| CN103111157A (en) | Method for purifying and recovering discharge tail gas of regeneration process of adsorption tower in polycrystalline silicon production | |
| CN113277471B (en) | Method and device for recovering reduction tail gas in polycrystalline silicon production | |
| CN101357288B (en) | Hydrogen chloride circulation recovering method from off-gas generated from the production of polycrystalline silicon | |
| CN101254387A (en) | Voltage transformation adsorption method for separating mixture gas containing hydrogen and chloro-silicane and/or hydrogenchloride mixture gas | |
| CN106430244A (en) | Method for recovering and purifying ammonia gas from ammonia nitrogen wastewater | |
| CN104087354A (en) | Process of preparing synthetic natural gas by using yellow phosphorus tail gas | |
| CN102580459A (en) | Method for treating waste gas in production of polycrystalline silicon | |
| CN103551007B (en) | The method and system of process polycrystalline silicon reduction exhaust | |
| CN102992418B (en) | Multiphase flow rotation foam separation device and waste water/ gas treatment technology using same | |
| CN214456888U (en) | Hydrogen circulation system for polycrystalline silicon production | |
| CN112758935B (en) | Hydrogen circulation system for polycrystalline silicon production | |
| CN101372336B (en) | Method for preparing polysilicon | |
| CN108046986B (en) | Recycling system and recycling method for effective gas in coal-to-ethylene glycol process | |
| CN213772103U (en) | System for preparing shaft furnace reducing gas by coupling coke oven gas with carbon dioxide | |
| KR20190057367A (en) | Method for manufacturing polycrystalline silicon | |
| CN101372335B (en) | Method for preparing polysilicon | |
| CN215711775U (en) | Recovery unit of reduction tail gas in polycrystalline silicon production | |
| CN108569699A (en) | A kind of method for recovering tail gas | |
| CN217809273U (en) | Ammonia nitrogen system falls in coal system methyl alcohol |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |