CN214375951U - NB-IOT module data transmission control circuit - Google Patents
NB-IOT module data transmission control circuit Download PDFInfo
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- CN214375951U CN214375951U CN202120571321.2U CN202120571321U CN214375951U CN 214375951 U CN214375951 U CN 214375951U CN 202120571321 U CN202120571321 U CN 202120571321U CN 214375951 U CN214375951 U CN 214375951U
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Abstract
The utility model relates to the Internet of things, the utility model discloses NB-IOT module data transmission control circuit includes NB-IOT module, first isolation circuit unit, second isolation circuit unit and MCU, MCU links to each other with first isolation circuit unit and second isolation circuit unit respectively, NB-IOT module links to each other with first isolation circuit unit and second isolation circuit unit respectively, through the isolation circuit unit solve the problem that the mutual transmission of MCU and NB-IOT module signal high level voltage is inconsistent and leads to the equipment to damage, furthermore, the utility model discloses NB-IOT module data transmission control circuit still includes the awakening circuit unit, the awakening circuit unit links to each other with NB-IOT module and MCU respectively, utilizes MCU to awaken NB-IOT module for the first high level in NB-IOT module transmission data, has solved NB-IOT module and has been in the dormant state, the problem of the data of MCU transmission can't be accepted, the utility model is suitable for an NB-IOT module.
Description
Technical Field
The utility model relates to a thing networking, in particular to NB-IOT module data transmission control circuit.
Background
The NB-IOT technology has the great advantages of low power consumption, wide coverage, large connection, low cost and the like, and is mainly used in intelligent scenes such as intelligent endowment, intelligent campuses, intelligent public facilities, intelligent cities and the like. Under the promotion of market development, the functional design experience is particularly important if the hardware circuit design of the NB-IOT meets the requirements of users, and under the common condition, the intelligent terminal is designed to enable manufacturers to select types of NB-IOT modules according to the requirements of customers and to control related transceiving data of the NB-IOT by the original equipment of the intelligent terminal, so that the data can be transmitted to related cloud platforms and servers through the NB-IOT modules, and the monitoring and maintenance of the equipment are facilitated.
However, when the supply voltage of the MCU is different from the supply voltage of the selected NB-IOT module, the high level voltages of the signals mutually transmitted by the MCU and the NB-IOT module are inconsistent, which may cause the device to be damaged and present a safety hazard.
For the NB-IOT module, if the NB-IOT module is in a working state all the time, energy is wasted, in order to save energy, the sleeping function of the NB-IOT module is fully utilized, so that the NB-IOT module is in a sleeping state when the NB-IOT module does not receive and transmit data, and therefore the NB-IOT module also needs to be awakened when the MCU sends data to the NB-IOT module.
SUMMERY OF THE UTILITY MODEL
The utility model solves the technical problem that: the NB-IOT module data transmission control circuit solves the problem that equipment is damaged due to inconsistent high level voltages of signals transmitted by an MCU and an NB-IOT module, and further solves the problem that the NB-IOT module is in a dormant state and cannot receive data transmitted by the MCU.
The utility model provides a technical scheme that above-mentioned technical problem adopted: the NB-IOT module data transmission control circuit comprises an NB-IOT module, a first isolation circuit unit, a second isolation circuit unit and an MCU, wherein the MCU is respectively connected with the first isolation circuit unit and the second isolation circuit unit, and the NB-IOT module is respectively connected with the first isolation circuit unit and the second isolation circuit unit.
Furthermore, the circuit also comprises a wake-up circuit unit, and the wake-up circuit unit is respectively connected with the NB-IOT module and the MCU.
Further, the wake-up circuit unit comprises a third PNP triode, a fourth NPN triode, a manual switch, a fourth resistor and a fifth resistor; the base electrode of the third PNP triode is connected with the TXD pin of the MCU, the emitting electrode of the third PNP triode is connected with one end of a fourth resistor, the other end of the fourth resistor is connected with the emitting electrode of a fourth NPN triode, the collecting electrode of the third PNP triode is respectively connected with the WAKEUP pin of the NB-IOT module and one end of the manual switch, the collecting electrode of the fourth NPN triode is connected with one end of a fifth resistor, and the other end of the fifth resistor, the other end of the manual switch and the base electrode of the fourth NPN triode are jointly connected with the power supply of the NB-IOT module.
Further, the first isolation circuit unit comprises a first NPN triode, a first capacitor, a first resistor and a second resistor; an emitting electrode of the first NPN triode is connected with a TXD pin of the MCU, a base electrode of the first NPN triode is respectively connected with one end of the first capacitor and one end of the first resistor, the other end of the first capacitor and the other end of the first resistor are jointly connected to the MCU power supply, a collector electrode of the first NPN triode is respectively connected with one end of the second resistor and the RXD pin of the NB-IOT module, and the other end of the second resistor is connected with the power supply of the NB-IOT module.
Further, the second isolation circuit unit comprises a second NPN triode, a second capacitor, a third resistor and a fourth resistor; an emitting electrode of the second NPN triode is connected with a TXD pin of the NB-IOT module, a base electrode of the second NPN triode is respectively connected with one end of a second capacitor and one end of a fourth resistor, the other end of the second capacitor and the other end of the fourth resistor are jointly connected to a power supply of the NB-IOT module, a collecting electrode of the second NPN triode is respectively connected with an RXD pin of the MCU and one end of a third resistor, and the other end of the third resistor is connected with the power supply of the MCU.
The utility model has the advantages that: the utility model discloses NB-IOT module data transmission control circuit has solved the problem that MCU and NB-IOT module mutual transmission's signal high level voltage nonconformity lead to the equipment to damage through the buffer circuit unit, further through awakening circuit unit, utilizes MCU to awaken up NB-IOT module for the first high level in NB-IOT module transmission data, has solved NB-IOT module and has been in dormant state, can't accept the problem of the data of MCU transmission.
Drawings
Fig. 1 is a schematic diagram of the connection relationship of the NB-IOT module data transmission control circuit of the present invention.
Fig. 2 is a circuit diagram of an embodiment of the NB-IOT module data transmission control circuit of the present invention.
Detailed Description
The utility model discloses NB-IOT module data transmission control circuit is shown as attached figure 1, including NB-IOT module, first isolation circuit unit, second isolation circuit unit and MCU, MCU links to each other with first isolation circuit unit and second isolation circuit unit respectively, and NB-IOT module links to each other with first isolation circuit unit and second isolation circuit unit respectively.
Furthermore, the circuit also comprises a wake-up circuit unit, and the wake-up circuit unit is respectively connected with the NB-IOT module and the MCU.
Further, the wake-up circuit unit includes a third PNP transistor Q3, a fourth NPN transistor Q4, a manual switch S, a fourth resistor R4, and a fifth resistor R5; the base electrode of the third PNP triode Q3 is connected with the TXD pin of the MCU, the emitter electrode of the third PNP triode Q3 is connected with one end of a fourth resistor R4, the other end of the fourth resistor R4 is connected with the emitter electrode of a fourth NPN triode Q4, the collector electrode of the third PNP triode Q3 is respectively connected with the WAKEUP pin of the NB-IOT module and one end of the manual switch S, the collector electrode of the fourth NPN triode Q4 is connected with one end of a fifth resistor R5, and the other end of the fifth resistor R5, the other end of the manual switch S and the base electrode of the fourth NPN triode Q4 are commonly connected with the power supply of the NB-IOT module.
Principle analysis: the base voltage of the fourth NPN triode Q4 is VCC _ NB, the emitter of the fourth NPN triode Q4 is at a low level, the fourth NPN triode Q4 is turned on, the emitter of the third PNP triode Q3 is at a high level, and when the TXD pin of the MCU is at a high level, that is, the third PNP triode Q3 is turned on, so the WAKEUP end of the NB-IOT module receives the high level, and the NB-IOT module wakes up.
Further, the first isolation circuit unit includes a first NPN transistor Q1, a first capacitor C1, a first resistor R1, and a second resistor R2; an emitting electrode of the first NPN triode Q1 is connected with a TXD pin of the MCU, a base electrode of the first NPN triode Q1 is respectively connected with one end of a first capacitor C1 and one end of a first resistor R1, the other end of the first capacitor C1 and the other end of a first resistor R1 are jointly connected to the MCU power supply, a collector electrode of the first NPN triode Q1 is respectively connected with one end of a second resistor R2 and an RXD pin of the NB-IOT module, and the other end of the second resistor R2 is connected with the power supply of the NB-IOT module.
Principle analysis: when the TXD pin of the MCU is at a high level, the base of the first NPN triode Q1 is also at a high level, so the first NPN triode Q1 is turned off, and the collector level of the first NPN triode Q1 is VCC _ NB, i.e., the NB-IOT module RXD pin receives the high level VCC _ NB, thereby realizing mutual isolation of the high level voltage sent by the MCU and the high level voltage received by the NB-IOT module; when the TXD pin of the MCU is low, Q1 is turned on because the base of Q1 is high, and the collector of Q1 is low, i.e., the RXD pin of the NB module receives low.
Further, the second isolation circuit unit includes a second NPN transistor Q2, a second capacitor C2, a third resistor R3, and a fourth resistor R4; an emitting electrode of the second NPN triode Q2 is connected with a TXD pin of the NB-IOT module, a base electrode of the second NPN triode Q2 is respectively connected with one end of a second capacitor C2 and one end of a fourth resistor R4, the other end of the second capacitor C2 and the other end of the fourth resistor R4 are jointly connected with a power supply of the NB-IOT module, a collector electrode of the second NPN triode Q2 is respectively connected with an RXD pin of the MCU and one end of a third resistor R3, and the other end of the third resistor R3 is connected with the power supply of the MCU.
Principle analysis: when the TXD pin of the NB-IOT module is at a high level, the base of the second NPN triode Q2 is also at a high level, so the second NPN triode Q2 is turned off, and the collector level of the second NPN triode Q2 is VCC _ MCU, i.e., the MCU module RXD pin receives the high level VCC _ MCU, thereby realizing mutual isolation of the high level voltage sent by the NB-IOT module and the high level voltage received by the MCU; when the TXD pin of the NB is at a low level, the base of the second NPN transistor Q2 is at a high level, so the second NPN transistor Q2 is turned on, and the collector of the second NPN transistor Q2 is at a low level, i.e., the pin RXD of the MCU module receives a low level.
Example (b):
the utility model discloses an embodiment of NB-IOT module data transmission control circuit is shown in figure 2, including MCU, NB-IOT module, first NPN triode Q1, second NPN triode Q2, third PNP triode Q3, fourth NPN triode Q4, first electric capacity C1, second electric capacity C2, manual switch S, first resistance R1, second resistance R2, third resistance R3, fourth resistance R4 and fifth resistance R5; an emitter of a first NPN triode Q1 is connected to a TXD pin of the MCU, a base of the first NPN triode Q1 is connected to one end of a first capacitor C1 and one end of a first resistor R1, respectively, the other end of the first capacitor C1 and the other end of a first resistor R1 are commonly connected to the MCU power supply, a collector of the first NPN triode Q1 is connected to one end of a second resistor R2 and an RXD pin of the NB-IOT module, respectively, the other end of the second resistor R2 is connected to the power supply of the NB-IOT module, an emitter of a second NPN triode Q2 is connected to the TXD pin of the NB-IOT module, a base of the second NPN triode Q2 is connected to one end of a second capacitor C2 and one end of a fourth resistor R4, the other end of the second capacitor C2 and the other end of the fourth resistor R4 are commonly connected to the power supply of the NB-IOT module, a collector of the second NPN triode Q2 is connected to the RXD pin of the MCU and one end of the third resistor R3, the other end of the third resistor R3 is connected with a power supply of the MCU, the base of the third PNP triode Q3 is connected with the TXD pin of the MCU, the emitter of the third PNP triode Q3 is connected with one end of the fourth resistor R4, the other end of the fourth resistor R4 is connected with the emitter of the fourth NPN triode Q4, the collector of the third PNP triode Q3 is respectively connected with the WAKEUP pin of the NB-IOT module and one end of the manual switch S, the collector of the fourth NPN triode Q4 is connected with one end of the fifth resistor R5, the other end of the fifth resistor R5, the other end of the manual switch S and the base of the fourth NPN triode Q4 are jointly connected with the power supply of the NB-IOT module, the VBAT pin of the MCU is connected with the power supply, the GND pin of the MCU is grounded, the VBAT pin of the NB-IOT module is connected with the NB-IOT power supply, and the pin of the NB-IOT module is grounded.
Specifically, the utility model discloses NB-IOT module data transmission control circuit's embodiment, when MCU transmitted data to NB-IOT module, realized awakening up NB-IOT module through the first high level in the data, realized transmitting data's high level through first isolation circuit unit and kept apart, MCU's high level is unanimous with the MCU power promptly, and NB-IOT module's high level is unanimous with the voltage of NB-IOT module. On the contrary, when the NB-IOT module transmits data to the MCU, the high level isolation of the data transmission is realized through the second isolation circuit unit, namely the high level of the MCU is consistent with the MCU power supply, the high level of the NB-IOT module is consistent with the voltage of the NB-IOT module, and the high level voltage isolation of the MCU and the NB-IOT module is realized.
In this embodiment, the NB-IOT module can also be awakened by a manual switch (S).
Claims (5)
- The NB-IOT module data transmission control circuit is characterized by comprising an NB-IOT module, a first isolation circuit unit, a second isolation circuit unit and an MCU, wherein the MCU is respectively connected with the first isolation circuit unit and the second isolation circuit unit, and the NB-IOT module is respectively connected with the first isolation circuit unit and the second isolation circuit unit.
- 2. The NB-IOT module data transmission control circuit of claim 1, further comprising a wake-up circuit unit coupled to the NB-IOT module and the MCU respectively.
- 3. The NB-IOT module data transmission control circuit of claim 2, wherein the wake-up circuit unit comprises a third PNP transistor (Q3), a fourth NPN transistor (Q4), a manual switch (S), a fourth resistor (R4), and a fifth resistor (R5); the base electrode of the third PNP triode (Q3) is connected with the TXD pin of the MCU, the emitter electrode of the third PNP triode (Q3) is connected with one end of a fourth resistor (R4), the other end of the fourth resistor (R4) is connected with the emitter electrode of a fourth NPN triode (Q4), the collector electrode of the third PNP triode (Q3) is respectively connected with the WAKEUP pin of the NB-IOT module and one end of the manual switch (S), the collector electrode of the fourth NPN triode (Q4) is connected with one end of a fifth resistor (R5), and the other end of the fifth resistor (R5), the other end of the manual switch (S) and the base electrode of the fourth NPN triode (Q4) are commonly connected with the power supply of the NB-IOT module.
- 4. The NB-IOT module data transmission control circuit of claim 1, wherein the first isolation circuit unit comprises a first NPN transistor (Q1), a first capacitor (C1), a first resistor (R1), and a second resistor (R2); an emitting electrode of the first NPN triode (Q1) is connected with a TXD pin of the MCU, a base electrode of the first NPN triode (Q1) is respectively connected with one end of a first capacitor (C1) and one end of a first resistor (R1), the other end of the first capacitor (C1) and the other end of a first resistor (R1) are jointly connected to the MCU power supply, a collector electrode of the first NPN triode (Q1) is respectively connected with one end of a second resistor (R2) and an RXD pin of the NB-IOT module, and the other end of the second resistor (R2) is connected with the power supply of the NB-IOT module.
- 5. The NB-IOT module data transmission control circuit of claim 1, wherein the second isolation circuit unit comprises a second NPN transistor (Q2), a second capacitor (C2), a third resistor (R3), and a fourth resistor (R4); an emitting electrode of the second NPN triode (Q2) is connected with a TXD pin of the NB-IOT module, a base electrode of the second NPN triode (Q2) is respectively connected with one end of a second capacitor (C2) and one end of a fourth resistor (R4), the other end of the second capacitor (C2) and the other end of the fourth resistor (R4) are jointly connected with a power supply of the NB-IOT module, a collector electrode of the second NPN triode (Q2) is respectively connected with an RXD pin of the MCU and one end of a third resistor (R3), and the other end of the third resistor (R3) is connected with the power supply of the MCU.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120571321.2U CN214375951U (en) | 2021-03-19 | 2021-03-19 | NB-IOT module data transmission control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120571321.2U CN214375951U (en) | 2021-03-19 | 2021-03-19 | NB-IOT module data transmission control circuit |
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| Publication Number | Publication Date |
|---|---|
| CN214375951U true CN214375951U (en) | 2021-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202120571321.2U Active CN214375951U (en) | 2021-03-19 | 2021-03-19 | NB-IOT module data transmission control circuit |
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| CN (1) | CN214375951U (en) |
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- 2021-03-19 CN CN202120571321.2U patent/CN214375951U/en active Active
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