CN214361771U - Power supply circuit of power frequency asymmetric positive and negative voltage - Google Patents
Power supply circuit of power frequency asymmetric positive and negative voltage Download PDFInfo
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- CN214361771U CN214361771U CN202120045325.7U CN202120045325U CN214361771U CN 214361771 U CN214361771 U CN 214361771U CN 202120045325 U CN202120045325 U CN 202120045325U CN 214361771 U CN214361771 U CN 214361771U
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Abstract
The application provides a power frequency asymmetric positive and negative voltage power supply circuit, which adopts the on-off mode and time of a control power semiconductor to control the waveform of power frequency asymmetric positive and negative voltage, has low energy consumption and high production efficiency, increases the thickness of a ceramic membrane, and comprises a loop a, a loop b and a loop c, wherein the loop a, the loop b and the loop c are connected in series, the loop a, the loop b and the loop c respectively comprise a switch S0, a silicon controlled rectifier SCR1, a silicon controlled rectifier SCR2, an electroplating bath E and an electroplating bath F, the waveform of the power frequency asymmetric positive and negative voltage is controlled by controlling the on-off mode and time of the silicon controlled rectifier SCR1 and the silicon controlled rectifier SCR2, the switch S0 is kept closed, the silicon controlled rectifier SCR1 and the silicon controlled rectifier SCR2 are both disconnected within the time period of 0-t1, the silicon controlled rectifier SCR1 is closed, the silicon controlled rectifier SCR2 is kept disconnected within the time period of t1-t2, and the silicon controlled SCR2 is kept disconnected within the time period of t2-t3, and the silicon controlled SCR1 and the silicon controlled SCR2 are both disconnected, the silicon controlled SCR1 is disconnected and the silicon controlled SCR2 is disconnected in the time period from t3 to t4, a waveform period is completed, and the cycle is repeated.
Description
Technical Field
The utility model relates to a thermoelectric chemical oxidation technical field, it is specific, the utility model relates to a power supply circuit of asymmetric positive negative voltage of power frequency.
Background
The thermoelectric chemical oxidation is a new surface treatment technology which develops rapidly at home and abroad in recent years, and is developed on the basis of anodic oxidation, namely microplasma oxidation, plasma thermoelectric chemical oxidation, plasma-enhanced electrochemical surface ceramization and the like. The thermoelectrochemical oxidation adopts higher working voltage, the working area of the voltage is introduced into a high-voltage discharge area from a Faraday area of a common anodic oxidation method, arc discharge is utilized for enhancing and activating, so that the reaction generated on the anode causes corona, glow, micro-arc discharge and even spark spots to appear on the surface of a workpiece under a certain current density, and a layer of compact ceramic membrane is formed in situ on the surface of the valve metal, thereby achieving the purpose of modifying and strengthening the surface of the workpiece. The valve metal has the function of electrolyzing the metal of the valve in a metal-oxide-electrolyte system, and mainly comprises six metals of Al, T i, Mg, Zr, Nb and Ta and the alloy thereof. The ceramic membrane is metallurgically bonded with a substrate, has good bonding strength and high hardness, has the characteristics of good wear resistance, corrosion resistance, high-voltage insulation resistance, high-temperature impact resistance and the like, and can prolong the service life of a workpiece by times or even tens of times.
The thermoelectric chemical oxidation adopts high-voltage discharge, so that the surface of a workpiece generates violent spark discharge reaction, the spark discharge is too violent and is difficult to control, the thermoelectric chemical oxidation process has important influence on the effect and the compactness of the ceramic membrane, and in addition, the high-voltage discharge has high energy consumption, which is an important factor for restricting the practical application and popularization of the thermoelectric chemical oxidation. The existing direct current power supply equipment for the thermal electrochemical oxidation has large energy consumption and lower production efficiency, and influences the thickness of a ceramic membrane and the thickness of an electrophoresis hole sealing layer.
In view of this, the utility model provides a power supply circuit of asymmetric positive negative voltage of power frequency, the energy consumption of thermal electrochemical oxidation is low, production efficiency is high, and ceramic membrane thickness increases.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a power supply circuit of asymmetric positive negative voltage of power frequency adopts control power semiconductor's break-make mode and time, controls the wave form of the asymmetric positive negative voltage of power frequency, and the energy consumption of thermal electrochemical oxidation is low, production efficiency is high, and ceramic membrane thickness increases.
A power circuit of power frequency asymmetric positive and negative voltage comprises a loop a, a loop b and a loop c, wherein the loop a, the loop b and the loop c are connected in series, the loop a, the loop b and the loop c respectively comprise a switch S0, a silicon controlled rectifier SCR1, a silicon controlled rectifier SCR2, a plating bath E and a plating bath F, the waveform of the power frequency asymmetric positive and negative voltage is controlled by controlling the on-off mode and time of the silicon controlled rectifier SCR1 and the silicon controlled rectifier SCR2, the switch S0 is kept closed, the silicon controlled rectifier SCR1 and the silicon controlled rectifier SCR2 are both disconnected within a time period of 0-t1, the silicon controlled rectifier SCR1 is closed and the silicon controlled rectifier SCR2 is kept disconnected within a time period of t2-t3, the silicon controlled rectifier 1 and the silicon controlled rectifier SCR2 are both disconnected within a time period of t3-t4, the silicon controlled rectifier 1 is disconnected and the silicon controlled rectifier SCR2, and a waveform cycle is completed.
In some embodiments, when the plating bath is positive below and negative above, and the input voltage is positive half cycle, it is impossible to conduct because the voltage across SCR2 is always in the reverse direction, and SCR2 is equivalent to open circuit (the equivalent circuit is shown in fig. 3).
Further, in the time period of 0-t1, the SCR1 is in a cut-off state, and the current flows from the negative terminal of the plating bath F to the positive terminal of the plating bath E and then to the power grid, wherein the plating bath F obtains a reverse voltage and the plating bath E obtains a forward voltage.
Further, at time t1, the control circuit sends a trigger pulse to the SCR1 to turn on the SCR1, and at this time, the voltage of the power grid flows from the negative terminal of the plating bath F to the power grid, so that the plating bath F obtains the maximum reverse voltage, and the plating bath E has no voltage until time t2, and the positive half cycle of the power grid is completed.
In some embodiments, when the plating bath is positive below and negative above, and the input voltage is negative half cycle, it is impossible to conduct because the voltage across SCR1 is always in the reverse direction, and SCR1 is equivalent to open circuit (the equivalent circuit is shown in fig. 4).
Further, in the time period from t2 to t3, the SCR2 is turned off, and the current flows from the negative terminal of the plating bath E to the positive terminal of the plating bath F and then to the power grid, wherein the plating bath E receives a reverse voltage and the plating bath F receives a forward voltage.
Further, at time t3, the control circuit sends a trigger pulse to the SCR2 to turn on the SCR2, and at this time, the voltage of the power grid flows from the negative terminal of the electroplating bath E to the power grid, so that the electroplating bath E obtains the maximum reverse voltage, and the electroplating bath F has no voltage, and the negative half cycle of the power grid is completed until time t 4.
Furthermore, the silicon controlled SCR1 and the silicon controlled SCR2 both comprise a ten-turn potentiometer, the time of the time period from 0 to t1, the time period from t1 to t2, the time period from t2 to t3 and the time period from t3 to t4 are adjusted by the ten-turn potentiometer, the time of each turn is approximately 1 millisecond, and therefore continuous adjustment of the time from 0 to 10 milliseconds can be realized.
Further, the time lengths of the time periods of 0-t1, t1-t2, t2-t3 and t3-t4 are adjusted by a user on a machine panel or an upper computer of the user.
It is further preferred that the adjustment of the time duration of the time periods 0-t1, t1-t2, t2-t3 and t3-t4 is adjusted by the user on the machine panel.
Furthermore, the duration range and the pulse pause time of the cathode and anode pulses of the power supply with the power frequency asymmetric positive and negative voltages can reach 1000000us at most, the duty ratio of the power supply can exceed 95 percent according to unipolar calculation, the power supply can output direct current, the production efficiency is improved by 3 times, and the energy consumption is reduced to one sixth of the original energy consumption.
The technical effects are as follows:
1. the production efficiency is improved by 3 times, and the energy consumption is reduced to one sixth of the original energy consumption; 2. under the condition of the same other conditions, the power supply with power frequency asymmetric positive and negative voltage is used for carrying out thermoelectric chemical oxidation, so that the thickness of a coating is increased; 3. in the electrophoresis treatment after the thermoelectric chemical oxidation, because at different voltages, the thickness of the film is influenced, Al (NO3)3 aqueous solution can generate Al (OH)3 colloid under the action of a power plant, different working voltages cause different field intensities between a positive electrode and a negative electrode, the driving force for colloid particles is also different, and further the thickness of an electrophoresis hole sealing layer is influenced.
Drawings
The above described and other features of the present disclosure will be more fully described when read in conjunction with the following drawings. It is appreciated that these drawings depict only several embodiments of the disclosure and are therefore not to be considered limiting of its scope. The present disclosure will be described more clearly and in detail by using the accompanying drawings.
Fig. 1 is a system diagram of a power frequency asymmetric positive and negative voltage power supply circuit according to the present application.
Fig. 2 is a main circuit diagram of the power frequency asymmetric positive and negative voltage power supply circuit of the present application.
Fig. 3 is an equivalent circuit diagram of the present application when the input voltage is positive half cycle.
FIG. 4 is an equivalent circuit diagram of the present application when the input voltage is negative half cycle.
Detailed Description
The following examples are described to aid in the understanding of the present application and are not, and should not be construed to, limit the scope of the present application in any way.
In the following description, those skilled in the art will recognize that components may be described throughout this discussion as separate functional units (which may include sub-units), but those skilled in the art will recognize that various components or portions thereof may be divided into separate components or may be integrated together (including being integrated within a single system or component).
Also, connections between components or systems are not intended to be limited to direct connections. Rather, data between these components may be modified, reformatted, or otherwise changed by the intermediate components. Additionally, additional or fewer connections may be used. It should also be noted that the terms "coupled," "connected," or "input" and "fixed" are understood to encompass direct connections, indirect connections, or fixed through one or more intermediaries.
Example 1:
a power circuit of power frequency asymmetric positive and negative voltage comprises a loop a, a loop b and a loop c, wherein the loop a and the loop b are connected with the loop c in series, the loop a, the loop b and the loop c respectively comprise a switch S0, a silicon controlled rectifier SCR1, a silicon controlled rectifier SCR2, a plating bath E and a plating bath F, the waveform of the power frequency asymmetric positive and negative voltage is controlled by controlling the on-off mode and time of the silicon controlled rectifier SCR1 and the silicon controlled rectifier SCR2, the switch S0 is kept closed, the silicon controlled rectifier SCR1 and the silicon controlled rectifier SCR2 are both opened in a time period from 0 to t1, the silicon controlled rectifier SCR1 is closed, the silicon controlled rectifier SCR2 is kept opened in a time period from t2 to t3, the silicon controlled rectifier SCR1 and the silicon controlled rectifier SCR2 are both opened in a time period from t 84 to t4, the silicon controlled rectifier 1 is opened, the silicon controlled rectifier 2 is used for completing a waveform period, and the cycle is circulated accordingly.
When the lower part of the electroplating bath is positive and the upper part of the electroplating bath is negative, and the input voltage is positive half cycle, the voltage on the silicon controlled rectifier SCR2 is always in reverse direction and cannot be conducted, and the silicon controlled rectifier SCR2 is equivalent to an open circuit (an equivalent circuit is shown in figure 3). In the time period of 0-t1, the SCR1 is in a cut-off state, and the current flows from the negative end of the plating bath F to the positive end of the plating bath E and then to the power grid, wherein the plating bath F obtains a reverse voltage and the plating bath E obtains a forward voltage. At the time of t1, the control circuit sends a trigger pulse to the SCR1 to turn on the SCR1, and at the time, the voltage of the power grid flows to the power grid from the negative end of the electroplating bath F, so that the electroplating bath F obtains the maximum reverse voltage, the electroplating bath E has no voltage, and the positive half cycle of the power grid is finished until the time of t 2.
When the lower part of the electroplating bath is positive and the upper part is negative, and the input voltage is negative half cycle, the voltage on the silicon controlled rectifier SCR1 is always in reverse direction and cannot be conducted, and the silicon controlled rectifier SCR1 is equivalent to an open circuit (an equivalent circuit is shown in figure 4). In the time period from t2 to t3, the SCR2 is in a cut-off state, and the current flows from the negative terminal of the plating bath E to the positive terminal of the plating bath F and then to the power grid, wherein the plating bath E obtains a reverse voltage and the plating bath F obtains a forward voltage. At the time of t3, the control circuit sends a trigger pulse to the SCR2 to turn on the SCR2, and at the time, the voltage of the power grid flows to the power grid from the negative end of the electroplating bath E, so that the electroplating bath E obtains the maximum reverse voltage, the electroplating bath F has no voltage, and the negative half cycle of the power grid is finished until the time of t 4. The silicon controlled SCR1 and the silicon controlled SCR2 both comprise a ten-turn potentiometer, the time of the time period from 0 to t1, the time period from t1 to t2, the time period from t2 to t3 and the time period from t3 to t4 are adjusted by the ten-turn potentiometer, the time of each turn is approximately 1 millisecond, and therefore continuous adjustment of the time from 0 to 10 milliseconds can be realized. The adjustment of the time duration of the 0-t1, t1-t2, t2-t3 and t3-t4 time periods is adjusted by the user on the machine panel. The duration range and the pulse pause time of the cathode and anode pulses of the power supply with the power frequency asymmetric positive and negative voltages can reach 1000000us at most, the duty ratio of the power supply can exceed 95 percent according to unipolar calculation, the power supply can output direct current, the production efficiency is improved by 3 times, and the energy consumption is reduced to one sixth of the original energy consumption.
During the thermoelectric chemical oxidation, adopt the power supply (sample group) of the asymmetric positive negative voltage of power frequency of this application, compare with traditional power supply (contrast group), do at the electrolyte: 20% of Na2SiO325% of NaC lO3The temperature of electrolyte is 25 ℃, the time of the flat aluminum wire in a plating tank for thermal electrochemical oxidation is 100 seconds, the thickness of the ceramic layer on the surface of the flat aluminum wire of the sample group is 60 microns, and the thickness of the ceramic layer on the surface of the flat aluminum wire of the control group is 25 microns.
While various aspects and embodiments have been disclosed herein, it will be apparent to those skilled in the art that other aspects and embodiments can be made without departing from the spirit of the disclosure, and that several modifications and improvements can be made without departing from the spirit of the disclosure. The various aspects and embodiments disclosed herein are presented by way of example only and are not intended to limit the present disclosure, which is to be controlled in the spirit and scope of the appended claims.
Claims (10)
1. A power circuit of power frequency asymmetric positive and negative voltage is characterized by comprising a loop a, a loop b and a loop c, wherein the loop a, the loop b and the loop c are connected in series, the loop a, the loop b and the loop c respectively comprise a switch S0, a silicon controlled SCR1, a silicon controlled SCR2, an electroplating bath E and an electroplating bath F, the waveform of the power frequency asymmetric positive and negative voltage is controlled by controlling the on-off mode and time of the silicon controlled SCR1 and the silicon controlled SCR2, the switch S0 is kept closed, the silicon controlled SCR1 and the silicon controlled SCR2 are both opened in a time period of 0-t1, the silicon controlled SCR1 is closed and the silicon controlled SCR2 is kept opened in a time period of t1-t2, the silicon controlled SCR1 and the silicon controlled SCR2 are both opened in a time period of t2-t3, the silicon controlled SCR 539SCR 1 and the silicon controlled SCR2 are opened in a time period of t3-t4, and a waveform cycle is completed.
2. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 1, wherein when the lower side of the electroplating bath is positive and the upper side is negative, and the input voltage is positive half cycle, the voltage on the SCR2 is always in reverse direction, so that the SCR2 is equivalent to open circuit.
3. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 2, wherein, in the time period of 0-t1, the SCR1 is in a cut-off state, and the current flows from the negative terminal of the plating tank F to the positive terminal of the plating tank E and then to the power grid, wherein the plating tank F obtains a reverse voltage and the plating tank E obtains a forward voltage.
4. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 3, wherein at time t1, the control circuit sends a trigger pulse to the SCR1 to turn on the SCR1, and at this time, the voltage of the power grid flows to the power grid from the negative terminal of the electroplating bath F, so that the electroplating bath F obtains the maximum reverse voltage, and the electroplating bath E has no voltage until time t2, and the positive half cycle of the power grid is completed.
5. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 1, wherein when the lower part of the electroplating bath is positive and the upper part is negative, and the input voltage is negative for half cycle, the voltage on the SCR1 is always in reverse direction, so that the SCR1 is equivalent to open circuit.
6. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 5, wherein during the time period t2-t3, the SCR2 is in cut-off state, and the current flows from the negative terminal of the electroplating bath E to the positive terminal of the electroplating bath F and then to the power grid, wherein the reverse voltage is obtained from the electroplating bath E and the forward voltage is obtained from the electroplating bath F.
7. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 6, wherein at time t3, the control circuit sends a trigger pulse to the SCR2 to turn on the SCR2, and at this time, the grid voltage flows to the grid from the negative terminal of the electroplating bath E, so that the electroplating bath E obtains the maximum reverse voltage, and the electroplating bath F has no voltage until time t4, and the negative half cycle of the grid is completed.
8. The power frequency asymmetrical positive and negative voltage power supply circuit as claimed in claim 1, wherein both the SCR1 and SCR2 comprise a ten-turn potentiometer, and the time duration of the time period from 0-t1, t1-t2, t2-t3 and t3-t4 are adjusted by the ten-turn potentiometer, and the time duration of each turn is approximately 1 ms, so that the time duration can be continuously adjusted from 0-10 ms.
9. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 8, wherein the adjustment of the time duration of the 0-t1 time period, the t1-t2 time period, the t2-t3 time period and the t3-t4 time period is adjusted by a user on a machine panel or by an upper computer of the user.
10. The power frequency asymmetric positive-negative voltage power supply circuit as claimed in claim 1, wherein the power frequency asymmetric positive-negative voltage power supply has a cathode-anode pulse duration range and a pulse pause time of up to 1000000us, the duty ratio of the power supply can exceed 95% according to unipolar calculation, and the power supply can output direct current.
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| CN202120045325.7U CN214361771U (en) | 2021-01-08 | 2021-01-08 | Power supply circuit of power frequency asymmetric positive and negative voltage |
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| CN202120045325.7U CN214361771U (en) | 2021-01-08 | 2021-01-08 | Power supply circuit of power frequency asymmetric positive and negative voltage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114337455A (en) * | 2021-12-31 | 2022-04-12 | 西比里电机技术(苏州)有限公司 | Drive topology circuit of low-voltage motor |
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2021
- 2021-01-08 CN CN202120045325.7U patent/CN214361771U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114337455A (en) * | 2021-12-31 | 2022-04-12 | 西比里电机技术(苏州)有限公司 | Drive topology circuit of low-voltage motor |
| CN114337455B (en) * | 2021-12-31 | 2023-08-18 | 西比里电机技术(苏州)有限公司 | Driving topology circuit of low-voltage motor |
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