CN214336702U - Voltage-sharing structure of power semiconductor device - Google Patents
Voltage-sharing structure of power semiconductor device Download PDFInfo
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- CN214336702U CN214336702U CN202022961342.3U CN202022961342U CN214336702U CN 214336702 U CN214336702 U CN 214336702U CN 202022961342 U CN202022961342 U CN 202022961342U CN 214336702 U CN214336702 U CN 214336702U
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Abstract
A power semiconductor device voltage grading structure comprising: the device comprises a semiconductor device (3), a press-fitting assembly, a flat pressing block (2) and a disc spring assembly; the disc spring assembly comprises a disc spring pressing block (4) and a plurality of disc springs (7), wherein the disc springs (7) are uniformly arranged and completely cover the semiconductor device (3); the press-fitting assembly is of a cylindrical structure, the semiconductor device (3), the flat pressing block (2) and the disc spring assembly are all arranged in the cylindrical structure, and pressure is applied to the semiconductor device (3), the flat pressing block (2) and the disc spring assembly through the press-fitting assembly to realize pressure equalization; the utility model provides a power semiconductor device voltage-sharing structure, compact structure, when obtaining more even pressure, makes the thickness size of the pressure equipment body less, has reduced the weight of the pressure equipment body; the disc spring can be positioned by using the guide rod with the flange, and the outer diameter of the flange is also used for guiding.
Description
Technical Field
The utility model relates to a pressure equipment structure, concretely relates to power semiconductor device voltage-sharing structure.
Background
The power semiconductor devices, such as diodes, thyristors, IGBTs, etc., are important parts in power electronic engineering application, and some high-voltage and high-current power semiconductor devices should have a certain pressing force when in use. Depending on the size of the component, the pressing force may reach several tons to tens of tons. Therefore, one or more power semiconductor devices, a heat sink, a press block, a bus bar and the like are generally used as a press-fitting assembly according to a specified pressing force, and the uniformity of the pressure on the surface of the semiconductor device is important, which is related to the working performance and the service life of the device.
Because the temperature rise of the power semiconductor device during working is high, the press-fitting body can be formed by press-fitting parts made of different materials such as steel, aluminum, copper, an insulating part and the like, the linear expansion coefficients of the materials are different, and the fluctuation of the pressing force can be caused when the temperature changes, therefore, a certain number of disc springs are generally used for compensating the fluctuation of the pressing force caused by the temperature change during press-fitting. According to different parameters of the device, such as structure size, pressure and the like, only 1 disc spring may be used during press mounting, and a plurality of disc springs may be used in combination in a manner of superposition, involution, series-parallel connection and the like.
In general, the size of the power semiconductor device may be considerably different from the inner diameter or the outer diameter of the disc spring. Regardless of the material used, the thickness of the compact has a large influence on the force transmission and uniformity, for example, when the thickness is thin, the stress is large near the stress point close to the disc spring and small far from the stress point on the contact plane of the compact and the semiconductor device. For typical plastic materials, the force transmission is substantially according to a cone angle of 90 °. Therefore, in order to obtain a relatively uniform stress on the working surface of the power semiconductor device, it is necessary to perform press-fitting using a compact having a certain thickness.
The power semiconductor device has a round shape and a square shape, for the round shape, the uniformity of the pressure contact surface mainly depends on the thickness of the pressing block and the diameter of the disc spring, and the pressing block is too thin, so that the stress of the part corresponding to the diameter of the disc spring is too large and is reduced inwards and outwards in a concentric circle state. For square power semiconductor devices, thicker press blocks are required to ensure that the pressure applied via the circular line contact surface of the disk spring is transmitted to the square surface of the semiconductor device, which results in a larger structural size of the press-fitting body and also increases the weight of the device.
In addition, under the condition that the stress diameter of the disc spring is smaller, the stress of the pressure plates on the two sides is close to the central concentrated load, so that the thickness of the pressure plates on the two sides needs to be correspondingly increased.
In any case, this may lead to a larger overall size of the press-fitting body and also to an increased weight of the device.
SUMMERY OF THE UTILITY MODEL
When to the semiconductor pressure equipment, the briquetting thickness is thinner can cause the atress uneven, so need thicker briquetting, the structure size that leads to the pressure equipment to carry is great, has increased the problem of the weight of equipment simultaneously, the utility model provides a power semiconductor device voltage-sharing structure, include: the pressing assembly comprises a plurality of elastic pieces, a positioning device and a pressing assembly;
the elastic pieces are arranged on one side of the semiconductor component in an array mode according to the shape of the semiconductor component;
the positioning device is arranged between the semiconductor assembly and the elastic piece and used for fixing the elastic piece;
the press-fitting assembly press-fits the plurality of elastic members, the positioning device, and the semiconductor assembly.
Preferably, the elastic member comprises a disc spring (7) and a guide rod (6);
the guide rod (6) is provided with a flange structure, and a convex part of the guide rod (6) penetrates through the disc spring (7) to be fixed on the positioning device.
Preferably, the diameter of the convex part of the guide rod (6) is equal to the inner diameter of the disc spring (7), and the diameter of the platform of the guide rod (6) is larger than the inner diameter of the disc spring (7).
Preferably, the semiconductor assembly comprises semiconductor devices (3) and flat pressing blocks (2) structurally matched with the semiconductor devices (3), the number of the flat pressing blocks (2) is one more than that of the semiconductor devices (3), and the flat pressing blocks are arranged at intervals with the semiconductor devices (3).
Preferably, the positioning device is a disc spring pressing block (4), the disc spring pressing block (4) is provided with a plurality of grooves, the platform of each guide rod (6) is arranged in one groove, the diameter of each groove is the same as that of the corresponding guide rod (6), and the depth of each groove is determined by the thickness of the platform of each guide rod (6) and the stroke of each disc spring (7).
Preferably, the depth of the groove is greater than the sum of the depth of the platform of the guide rod (6) and the stroke of the disc spring (7), and is less than the thickness of the disc spring pressing block (4).
Preferably, when the semiconductor device (3) is square in shape, the plurality of grooves are arranged in a rectangular array.
Preferably, when the semiconductor device (3) is circular in shape, the plurality of grooves are arranged in a central array.
Preferably, the press-fitting assembly comprises two press plates and a fastener;
the two pressing plates are arranged on two sides of the elastic piece and the semiconductor assembly, and the fastener penetrates through the two pressing plates and fixes the pressing plates.
Preferably, the device adopted by the flat pressing block (2) comprises a heat radiator, an insulating plate or a busbar.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model provides a pair of power semiconductor device voltage-sharing structure includes: the method comprises the following steps: the pressing assembly comprises a plurality of elastic pieces, a positioning device and a pressing assembly; the elastic pieces are arranged on one side of the semiconductor component in an array mode according to the shape of the semiconductor component; the positioning device is arranged between the semiconductor assembly and the elastic piece and used for fixing the elastic piece; the press-fitting assembly is used for press-fitting the plurality of elastic pieces, the positioning device and the semiconductor assembly; the arrangement mode of a plurality of elastic pieces makes the utility model compact in structure, and the thickness and size of the press-fitting body are smaller while more uniform pressure is obtained, thereby reducing the weight of the press-fitting body;
2. the utility model provides a voltage-sharing structure of a power semiconductor device, which uses a guide rod with a flange, can position a disc spring, and the outer diameter of the flange is also used for guiding; during assembly, the disc spring can not fall off no matter moving, overturning or the like, the accuracy and the stable structure of the position of the disc spring are ensured, and the press mounting body is easy to assemble.
Drawings
Fig. 1 is a front view of a voltage-sharing structure of a square power semiconductor device provided by the present invention;
fig. 2 is a left side view of the voltage-sharing structure of the square power semiconductor device provided by the present invention;
fig. 3 is a front view of a voltage equalizing structure of a circular power semiconductor device according to the present invention;
fig. 4 is a left side view of the voltage equalizing structure of the circular power semiconductor device provided by the present invention;
FIG. 5 is a schematic illustration of the position of the part 6 before deformation of the part 7 of FIG. 1;
FIG. 6 is a schematic illustration of the position of the part 6 after deformation of the part 7 of FIG. 1;
wherein, 1-left side pressing plate; 2-flattening and briquetting; 3-a semiconductor device; 4-disc spring pressing block; 5-right pressing plate; 6-flanged guide bar; 7-disc spring.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1:
the utility model provides a power semiconductor device voltage-sharing structure, as shown in FIG. 1 and FIG. 3, specifically include: the device comprises a semiconductor device 3, a press-fitting assembly, a flat pressing block 2 and a disc spring assembly;
the disc spring assembly comprises a disc spring pressing block 4 and a plurality of disc springs 7, wherein the disc springs 7 are uniformly arranged and completely cover the semiconductor device 3, as shown in fig. 2 and 4; the disc springs 7 in fig. 2 and 4 are arranged in an array, and the number and the positions are only examples, in practical engineering, optimization should be performed according to the characteristics of the elements, and by adopting the most appropriate number of array modes, too many disc spring assemblies may have better pressure-equalizing effect, but by adopting too many elements, the structure may be complex.
The press-fitting assembly is of a cylindrical structure, the semiconductor device 3, the flat pressing block 2 and the disc spring assembly are all arranged in the cylindrical structure, and pressure is applied to the semiconductor device 3, the flat pressing block 2 and the disc spring assembly through the press-fitting assembly to realize pressure equalization.
The flat pressing blocks 2 are disposed on both sides of the semiconductor device 3, as shown in fig. 1.
The flat pressing block 2 adopts a radiator, an insulating plate or a busbar.
The disc spring assembly is arranged on the right side of the semiconductor device 3 and the flat pressing block 2.
The disc spring pressing block 4 is arranged on the left side of the disc spring 7, and the disc springs 7 are evenly arranged on the right side of the disc spring pressing block.
The disc spring assembly further comprises a plurality of flanged guide rods 6, and each disc spring 7 corresponds to one flanged guide rod 6;
the flanged guide rod 6 is arranged inside the disc spring 7, penetrates through the center of the disc spring 7 and is fixedly connected with the right pressing plate 5;
the disc spring pressing block 4 is provided with a groove, and the guide rod 6 with the flange is movably connected with the disc spring pressing block 4 through the groove of the disc spring pressing block 4.
The diameter of the guide rod of the flanged guide rod 6 is equal to the inner diameter of the disc spring 7, and the diameter of the flange of the flanged guide rod 6 is larger than the inner diameter of the disc spring 7;
the diameter of the groove of the disc spring pressing block 4 is the same as that of the flange of the flanged guide rod 6, and the depth of the groove is larger than the sum of the thickness of the flange and the maximum stroke of the disc spring 7.
As shown in fig. 5, the flanged guide rod 6 is fixed on the right pressing plate 5 in a state that the disc spring 7 is at a natural height before assembly, the position of the flange is kept in the groove of the disc spring pressing block 4, and after the flange is pressed, the position of the flange is as shown in fig. 6, so that the deformation and the work of the disc spring are not influenced.
The press-fitting assembly comprises a pressing plate and a fastening piece; the pressing plates are two and are connected through the fasteners to form the cylindrical structure.
The pressing plates comprise a left pressing plate 1 and a right pressing plate 5;
the left pressing plate 1 is arranged at the leftmost side of the structure and is adjacent to the flat pressing block 2;
the right pressing plate 5 is arranged at the rightmost side of the structure and is adjacent to the disc spring 7.
The arrangement mode of the disc spring 7 comprises: a rectangular array arrangement or a circumferential array arrangement.
When the semiconductor device 3 is square, the disc spring assemblies are arranged in a rectangular array, as shown in fig. 2; the semiconductor devices 3, when circular, are arranged in a circumferential array, as shown in fig. 4.
The disc spring assemblies arranged in the rectangular array can conveniently transmit pressure to four corners of the rectangle through a plurality of small circles; the disc spring assemblies are arranged in a circumferential array, and because the center of each disc spring assembly is positioned near the central circle of the surface of the device, uniform pressure can be obtained without using too thick disc spring pressing blocks 4.
The disc spring assemblies are arranged in an array form, so that the stress of the right pressing plate 5 can be improved, the concentrated load at the center is changed into two-point load with a certain span, the deformation and the stress of the right pressing plate 5 are reduced, and the thickness of the disc spring assemblies can be reduced.
The above description is only exemplary of the invention and is not intended to limit the invention, and any modifications, equivalent alterations, improvements and the like which are made within the spirit and principle of the invention are all included in the scope of the claims which are appended hereto.
Claims (10)
1. A power semiconductor device voltage equalizing structure, comprising: the pressing assembly comprises a plurality of elastic pieces, a positioning device and a pressing assembly;
the elastic pieces are arranged on one side of the semiconductor component in an array mode according to the shape of the semiconductor component;
the positioning device is arranged between the semiconductor assembly and the elastic piece and used for fixing the elastic piece;
the press-fitting assembly is arranged on the outer sides of the elastic pieces, the positioning devices and the semiconductor assembly and used for press-fitting the elastic pieces, the positioning devices and the semiconductor assembly.
2. A pressure equalizing structure according to claim 1, characterized in that the elastic member comprises a disc spring (7) and a guide rod (6);
the guide rod (6) is provided with a flange structure, and a convex part of the guide rod (6) penetrates through the disc spring (7) to be fixed on the positioning device.
3. A pressure equalizing structure according to claim 2, characterized in that the diameter of the convex part of the guide rod (6) is equal to the inner diameter of the disc spring (7), and the diameter of the platform of the guide rod (6) is larger than the inner diameter of the disc spring (7).
4. The voltage grading structure according to claim 2, characterized in that the semiconductor assembly comprises semiconductor devices (3) and grading blocks (2) structurally matched to the semiconductor devices (3), the grading blocks (2) being one more in number than the semiconductor devices (3) and being spaced apart from the semiconductor devices (3).
5. A pressure equalizing structure according to claim 3, characterized in that the positioning means is a disc spring pressing block (4), the disc spring pressing block (4) has a plurality of grooves, the platform of each guide rod (6) is arranged in one of the grooves, the diameter of the groove is the same as the platform diameter of the guide rod (6), and the depth of the groove is determined by the platform thickness of the guide rod (6) and the stroke of the disc spring (7).
6. A pressure equalizing structure according to claim 5, characterized in that the depth of the groove is greater than the sum of the depth of the platform of the guide rod (6) and the stroke of the disc spring (7) and less than the thickness of the disc spring pressure piece (4).
7. The voltage grading structure according to claim 5, characterized in that said plurality of recesses are arranged in a rectangular array when said semiconductor device (3) has a square shape.
8. A voltage grading structure according to claim 5, characterized in that said plurality of grooves are arranged in a central array when said semiconductor device (3) is circular in shape.
9. The pressure equalizing structure of claim 1, wherein said press-fit assembly comprises two pressure plates and a fastener;
the two pressing plates are arranged on the outer sides of the elastic pieces, the positioning device and the semiconductor assembly; the fastener penetrates through the two pressing plates and fixes the pressing plates.
10. A voltage grading structure according to claim 4, characterized in that the devices used for the grading block (2) comprise heat sinks, insulating plates or busbars.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022961342.3U CN214336702U (en) | 2020-12-10 | 2020-12-10 | Voltage-sharing structure of power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022961342.3U CN214336702U (en) | 2020-12-10 | 2020-12-10 | Voltage-sharing structure of power semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN214336702U true CN214336702U (en) | 2021-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022961342.3U Active CN214336702U (en) | 2020-12-10 | 2020-12-10 | Voltage-sharing structure of power semiconductor device |
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| CN (1) | CN214336702U (en) |
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- 2020-12-10 CN CN202022961342.3U patent/CN214336702U/en active Active
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