CN214313855U - Pulse amplification device, laser and equipment - Google Patents
Pulse amplification device, laser and equipment Download PDFInfo
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- CN214313855U CN214313855U CN202120123050.4U CN202120123050U CN214313855U CN 214313855 U CN214313855 U CN 214313855U CN 202120123050 U CN202120123050 U CN 202120123050U CN 214313855 U CN214313855 U CN 214313855U
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Abstract
The utility model discloses a pulse amplification device, laser instrument and equipment belongs to laser technical field. The utility model discloses a pulse amplification device includes pulse seed source, laser amplifier, spectrum stretcher and pulse compressor, and pulse seed source is used for absorbing the pump light to change the pump light into seed laser, and the signal of seed laser is the limited pulse signal of Fourier transform; the laser amplifier is used for amplifying the seed laser under the action of the pump light to obtain the amplified seed laser; the spectrum stretcher is connected with the laser amplifier and used for stretching the spectrum width of the amplified seed laser to obtain wide-spectrum pulse laser; the pulse compressor is connected with the spectrum stretcher and used for compressing the wide-spectrum pulse laser to obtain the final pulse laser. The pulse amplification device can amplify the seed laser generated by the pulse seed source to obtain the high-pulse-energy laser, and is low in cost.
Description
Technical Field
The utility model relates to a laser technical field especially relates to a pulse amplification device, laser instrument and equipment.
Background
The existing laser mainly obtains high-pulse energy laser by amplifying the seed laser generated by the femtosecond oscillation seed source, and the design cost of the laser is high, so how to provide a low-cost pulse laser becomes a problem to be solved urgently.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a pulse amplification device can produce seed laser with pulse seed source and amplify the processing and obtain high pulse energy laser, and the cost is lower.
The utility model also provides a laser instrument of having above-mentioned pulse amplification device.
The utility model discloses still provide an electronic equipment who has above-mentioned laser instrument.
According to the utility model discloses a pulse amplification device of first aspect embodiment includes:
the pulse seed source is used for absorbing pump light and converting the pump light into seed laser, wherein a signal of the seed laser is a Fourier transform limited pulse signal;
the laser amplifier is used for amplifying the seed laser under the action of the pump light to obtain amplified seed laser;
the spectrum stretcher is connected with the laser amplifier and used for stretching the spectral width of the amplified seed laser to obtain wide-spectrum pulse laser;
the pulse compressor is connected with the spectrum stretcher and used for compressing the broad spectrum pulse laser to obtain the final pulse laser.
According to the utility model discloses pulse amplification device has following beneficial effect at least: the pulse seed source of the pulse amplification device absorbs the pump light and converts the pump light into seed laser, the signal of the seed laser is a Fourier transform limited pulse signal, the laser amplifier amplifies the seed laser under the action of the pump light to obtain the amplified seed laser, and then the spectrum stretcher stretches the spectrum width of the amplified seed laser to obtain wide-spectrum pulse laser, so that the pulse compressor can compress the wide-spectrum pulse laser to obtain final pulse laser, and the pulse seed source can generate the seed laser to be amplified to obtain high-pulse-energy laser, and the cost is low.
According to some embodiments of the invention, the pulsed seed source further comprises:
a microchip crystal assembly; the microchip crystal assembly is used for converting the pump light into seed laser;
and the light beam adjusting assembly is connected with the microchip crystal assembly and is used for adjusting the wavelength of the seed laser.
According to some embodiments of the utility model, microchip crystal subassembly includes first laser amplification crystal, second laser amplification crystal, third laser amplification crystal and fourth laser amplification crystal, first laser amplification crystal, second laser amplification crystal, third laser amplification crystal and fourth laser amplification crystal connect gradually.
According to some embodiments of the invention, the beam conditioning component comprises at least one of a dichroic mirror, an output coupling mirror, a lens, a diffractive optical element.
According to some embodiments of the utility model, laser amplifier includes the fifth laser crystal, the fifth laser crystal be used for under the effect of pump light, will seed laser enlargies, obtains the seed laser after enlargiing.
According to some embodiments of the present invention, an antireflection film is disposed on the fifth laser crystal.
According to some embodiments of the invention, the spectral stretcher comprises:
a multi-pass chamber;
and the sixth laser crystal is accommodated in the multi-pass chamber and is used for performing multiple times of nonlinear spectrum broadening on the amplified seed laser through the sixth laser crystal in the multi-pass chamber to obtain the wide-spectrum pulse laser.
According to some embodiments of the invention, the pulse compressor is at least one of a grating, a volume grating and a prism.
A laser according to an embodiment of the second aspect of the present invention comprises a pulse amplification device as described in the first aspect.
According to the utility model discloses laser instrument has following beneficial effect at least: the laser adopts the pulse amplification device, the pulse seed source of the pulse amplification device absorbs the pump light and converts the pump light into the seed laser, the signal of the seed laser is a Fourier transform limited pulse signal, the laser amplifier amplifies the seed laser under the action of the pump light to obtain the amplified seed laser, and then the spectrum stretcher stretches the spectrum width of the amplified seed laser to obtain the wide-spectrum pulse laser, so that the pulse compressor can compress the wide-spectrum pulse laser to obtain the final pulse laser, and the seed laser generated by the pulse seed source can be amplified to obtain the high-pulse-energy laser with lower cost.
An electronic device according to an embodiment of the third aspect of the present invention includes the laser according to the second aspect.
According to the utility model discloses electronic equipment has following beneficial effect at least: the electronic equipment adopts the laser, the pump light is absorbed by the pulse seed source and is converted into the seed laser, the signal of the seed laser is a Fourier transform limited pulse signal, the laser amplifier amplifies the seed laser under the action of the pump light to obtain the amplified seed laser, and then the spectrum stretcher stretches the spectrum width of the amplified seed laser to obtain the wide-spectrum pulse laser, so that the pulse compressor can compress the wide-spectrum pulse laser to obtain the final pulse laser, and the seed laser generated by the pulse seed source can be amplified to obtain the high-pulse-energy laser with lower cost.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention will be further described with reference to the following drawings and examples, in which:
fig. 1 is a schematic structural diagram of a pulse amplification device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a pulse seed source of the pulse amplification device of FIG. 1;
FIG. 3 is a schematic diagram of a laser amplifier of the pulse amplification apparatus of FIG. 1;
fig. 4 is a schematic structural diagram of a spectral stretcher of the pulse amplifying device of fig. 1.
Reference numerals: 100. a pulsed seed source; 200. a laser amplifier; 300. a spectral stretcher; 400. a pulse compressor; 110. a microchip crystal assembly; 111. a first laser amplification crystal; 112. a second laser amplification crystal; 113. a third laser amplification crystal; 114. a fourth laser amplification crystal; 120. a beam conditioning assembly; 121. a dichroic mirror; 122. an output coupling mirror; 210. a fifth laser crystal; 220. an anti-reflection film; 310. a multi-pass chamber; 320. a sixth laser crystal; s1, pumping light; s2, seed laser; s3, amplified seed laser; s4, broad spectrum pulse laser.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship indicated with respect to the orientation description, such as up, down, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, a plurality of means is one or more, a plurality of means is two or more, and the terms greater than, less than, exceeding, etc. are understood as not including the number, and the terms greater than, less than, within, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless there is an explicit limitation, the words such as setting, installation, connection, etc. should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above words in combination with the specific contents of the technical solution.
In the description of the present invention, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In a first aspect, referring to fig. 1, a pulse amplification apparatus according to an embodiment of the present invention includes a pulse seed source 100, a laser amplifier 200, a spectral stretcher 300, and a pulse compressor 400, where the pulse seed source 100 is configured to absorb pump light S1, and the pulse seed source 100 is further configured to convert the pump light S1 into seed laser S2, where a signal of the seed laser S2 is a fourier transform limited pulse signal; the laser amplifier 200 is configured to amplify the seed laser S2 under the action of the pump light S1 to obtain an amplified seed laser S3; the spectrum stretcher 300 is connected with the laser amplifier 200, and the spectrum stretcher 300 is used for stretching the spectrum width of the amplified seed laser S3 to obtain a wide-spectrum pulse laser S4; the pulse compressor 400 is connected to the spectrum stretcher 300, and the pulse compressor 400 is configured to compress the broad-spectrum pulsed laser S4 to obtain a final pulsed laser. The pulse seed source 100 of the pulse amplification device can generate a fourier transform limited pulse signal, specifically, the pulse seed source 100 can absorb the pump light S1 and modulate the pump light S1 to obtain a pulse laser consistent with a pump frequency, so that the pulse frequency of the pulse laser can be adjusted and controlled, and thus the seed laser S2 with a fourier transform limited pulse signal can be obtained by converting the pump light S1, and the fourier transform limited pulse signal can be directly generated by the pulse seed source 100 and is easy to implement. In some embodiments, the pulse width of the fourier transform limited pulse signal is about 300ps and the pulse energy is about 50 μ J, which meets the requirement of amplifying the seed laser S2 to obtain a high-energy laser. In some other embodiments, the pulse width and the pulse energy may have other values, but are not limited thereto. It should be noted that the pulse seed source 100 includes a microchip laser capable of generating a fourier transform limited pulse signal. Further, the laser amplifier 200 amplifies the seed laser S2 under the action of the pump light S1 to obtain the amplified seed laser S3, specifically, the seed laser S2 may be amplified by the combined action of semiconductor pumping or flash lamp pumping and a laser crystal, or may be in another form. It should be noted that the pulse width of the seed laser S2 amplified by the laser amplifier 200 remains substantially unchanged, for example, the pulse width of the amplified seed laser S3 remains about 300ps, and the linewidth of the fourier transform limited pulse signal is about 1500 MHz. The spectrum stretcher 300 stretches the spectral width of the amplified seed laser S3 to obtain a wide-spectrum pulse laser S4, so that the line width of the fourier transform limited pulse signal can be stretched by several times to form chirped pulses, for example, the line width of the fourier transform limited pulse signal can be stretched by 300 to 400 times to make the line width of the fourier transform limited pulse signal reach 450GHz to 600GHz, so that the wide-spectrum pulse laser S4 can be compressed by the pulse compressor 400 to obtain a final pulse laser, it should be noted that the pulse compressor 400 may include a dispersion element, so that after the wide-spectrum pulse laser S4 passes through the pulse compressor 400, the pulse width of the wide-spectrum pulse laser S4 may be compressed to obtain a femtosecond laser with higher energy. The direct generation of the seed laser S2 with the fourier transform-limited pulse signal by the pulse seed source 100 is easy to realize, the high-energy femtosecond laser can be obtained by the laser amplifier 200, the spectrum stretcher 300 and the pulse compressor 400, and the pulse amplification device can amplify the seed laser S2 generated by the pulse seed source 100 to obtain the high-pulse-energy laser with low cost. Meanwhile, the high-energy femtosecond laser obtained by the pulse amplification device does not need to be subjected to pulse broadening, and a frequency reduction device is not additionally arranged, so that the design cost is further reduced.
Referring to FIG. 2, in some embodiments, pulsed seed source 100 further includes a microchip crystal assembly 110 and a beam conditioning assembly 120; the microchip crystal assembly 110 is used for converting the pump light S1 into seed laser S2; a beam conditioning assembly 120 is coupled to the microchip crystal assembly 110, the beam conditioning assembly 120 being adapted to condition the wavelength of the seed laser S2. The pulse seed source 100 of the pulse amplification device comprises a microchip crystal assembly 110 and a beam adjusting assembly 120, wherein pump light S1 absorbed by the pulse seed source 100 is converted into seed laser S2 through the microchip crystal assembly 110, and meanwhile, after the properties such as spot size, divergence angle, energy distribution and the like of the seed laser S2 are adjusted through the beam adjusting assembly 120, the final seed laser S2 meeting the requirements of the laser amplifier 200 is obtained. The microchip crystal assembly 110 may be a laser crystal or other crystal. This enables seed laser S2, whose signal is a fourier transform limited pulse signal, to be conveniently obtained by the pulsed seed source 100.
In some embodiments, the microchip crystal assembly 110 includes a first laser amplification crystal 111, a second laser amplification crystal 112, a third laser amplification crystal 113, and a fourth laser amplification crystal 114, and the first laser amplification crystal 111, the second laser amplification crystal 112, the third laser amplification crystal 113, and the fourth laser amplification crystal 114 are sequentially connected. In order to better convert the pump light S1 into the seed laser light S2, the microchip crystal assembly 110 may include a laser crystal of YAG series, for example, the microchip crystal assembly 110 includes a first laser amplification crystal 111, a second laser amplification crystal 112, a third laser amplification crystal 113, and a fourth laser amplification crystal 114, and the first laser amplification crystal 111, the second laser amplification crystal 112, the third laser amplification crystal 113, and the fourth laser amplification crystal 114 are sequentially connected, wherein the first laser amplification crystal 111 is a YAG crystal, the second laser amplification crystal 112 is a Nd: YAG crystal, the third laser amplification crystal 113 is a Cr: YAG crystal, and the fourth laser amplification crystal 114 is a YAG crystal, and it should be noted that, in some specific embodiments, the first laser amplification crystal 111 and the fourth laser amplification crystal 114 mainly serve to enhance the heat dissipation effect. Since YAG laser crystals have good optical uniformity, high transmittance, excellent mechanical properties, and stable physicochemical properties, it is possible to easily obtain a seed laser light S2 having a wavelength matching the wavelength of the laser amplifier 200 by modulating the pumping light S1 using these laser crystals as the microchip crystal assembly 110, and it is noted that the seed laser light S2 has a specific pulse width, and for example, the pulse width of the seed laser light S2 is 300 ps.
In some embodiments, the beam conditioning component 120 includes at least one of a dichroic mirror 121, an output coupling mirror 122, a lens, and a diffractive optical element. In order to facilitate adjustment of the wavelength of the seed laser light S2, the light beam adjusting assembly 120 includes at least one of a dichroic mirror 121, an output coupling mirror 122, a lens, and a diffractive optical element, and for example, the light beam adjusting assembly 120 includes the dichroic mirror 121 and the output coupling mirror 122. The microchip crystal assembly 110 includes a first laser amplifier crystal 111, a second laser amplifier crystal 112, a third laser amplifier crystal 113, and a fourth laser amplifier crystal 114, wherein the first laser amplifier crystal 111, the second laser amplifier crystal 112, the third laser amplifier crystal 113, and the fourth laser amplifier crystal 114 are sequentially connected, wherein the first laser amplifier crystal 111 is a YAG crystal, the second laser amplifier crystal 112 is a Nd: YAG crystal, the third laser amplifier crystal 113 is a Cr: YAG crystal, the fourth laser amplifier crystal 114 is a YAG crystal, a dichroic mirror 121 is disposed at one side of the first laser amplifier crystal 111, an output coupling mirror 122 is disposed at one side of the fourth laser amplifier crystal 114, such that the dichroic mirror 121 highly transmits the working wavelength of the pump light S1, highly reflects the working wavelength of the seed laser S2, the output coupling mirror 122 highly reflects the working wavelength of the pump light S1, and the wavelength reflectivity of the seed laser S2 can be adjusted according to actual needs, for example, the reflectivity is set to 50%, which facilitates obtaining the final seed laser S2 that meets the requirements of the laser amplifier 200.
It should be noted that the pump light S1 may adopt a pulse pump mode, the pump pulse width is 200us, the repetition frequency is 100Hz, so that the pump threshold of the seed laser S2 output by the pulse seed source 100 is 12W, the output pulse energy is 52uJ, and the pulse width is 380ps, which meets the requirement of the pulse width of the seed laser S2, and at the same time, the pulse sequence of the seed laser S2 is stable. In some other embodiments, the pump light S1 can also be operated in other manners, and the operating parameter of the pump light S1 can also be other values, which is not limited to this.
In some specific embodiments, the operating wavelength of the pump light S1 in the pulsed seed source 100 is 808nm, the peak power is 40W, and the output fiber core diameter of the pump light S1 is 105 um. The cross-sectional dimensions of the first laser amplifier crystal 111 and the fourth laser amplifier crystal 114 are matched with those of the second laser amplifier crystal 112 and the third laser amplifier crystal 113, and are 3mm by 3mm, and the length generally does not exceed 3mm, so as to enhance the heat dissipation effect, while the dimensions of the second laser amplifier crystal 112, the third laser amplifier crystal 113, the first laser amplifier crystal, the fourth laser amplifier crystal, and the third laser amplifier crystal can be 3mm by 3mm, wherein the thickness of the second laser amplifier crystal 112 is 1.5mm, and the thickness of the third laser amplifier crystal 113 is 1.5 mm. In addition, the high reflection parameter of the dichroic mirror 121 is HR @1064nm (R > 99.8%), and the double-point anti-reflection parameter is AR @808nm (T > 97%); the output coupling mirror 122 has a partial reflection parameter PR @1064nm (R ═ 50%) and a high reflection parameter HR @808nm (R > 95%). In some other embodiments, each parameter may be other values, but is not limited thereto.
Referring to fig. 3, in some embodiments, the laser amplifier 200 includes a fifth laser crystal 210, and the fifth laser crystal 210 is configured to amplify the seed laser S2 by the pump light S1, so as to obtain an amplified seed laser S3. The pump light S1 absorbed by the pulse seed source 100 enters the laser amplifier 200 and is amplified to obtain an amplified pump light S1, and the amplified pump light S1 enters the fifth laser crystal 210 of the laser amplifier 200 and is absorbed by the fifth laser crystal 210, so that the fifth laser crystal 210 is in an excited state, and thus the seed laser S2 passes through the excited fifth laser crystal 210 and is amplified to obtain an amplified seed laser S3. It should be noted that the pump light S1 amplified by the laser amplifier 200 may be a wavelength-locked semiconductor laser with a wavelength of 878nm, the power of the laser can reach 120W, and the inner diameter of the transmission fiber is 200 um. The amplified pump light S1 may be a laser light of another form, but is not limited thereto. The fifth laser crystal 210 is specifically a microchip amplifying crystal, for example, the fifth laser crystal 210 is Nd: YVO4 crystal, and the size of the fifth laser crystal 210 may be 3mm by 20mm, and the doping concentration is 0.2 at%. The microchip amplifying crystal has a higher absorption coefficient and a larger stimulated emission cross section for the pump light S1, and can achieve better frequency doubling conversion efficiency, so that the seed laser S2 can be better amplified, and the amplified seed laser S3 can be obtained. It should be noted that the fifth laser crystal 210 may also be another type of laser crystal, and is not limited thereto.
In some embodiments, an anti-reflection film 220 is disposed on the fifth laser crystal 210. In order to reduce reflection loss, the outer surfaces of the fifth laser crystals 210 are provided with the antireflection film 220, wherein the double-point antireflection parameter of the antireflection film 220 is AR @878nm &1064nm, so that the seed laser S3 amplified by the laser amplifier 200 is a fourier transform limited pulse signal with a pulse energy of 100mJ, a pulse width of 288ps and a spectral line width of 510 MHz.
Referring to fig. 4, in some embodiments, the spectral stretcher 300 includes a multipass chamber 310 and a sixth laser crystal 320; the sixth laser crystal 320 is a highly nonlinear crystal, and the sixth laser crystal 320 is accommodated inside the multi-pass chamber 310, and is configured to perform multiple nonlinear spectrum broadening on the amplified seed laser S3 through the sixth laser crystal 320 in the multi-pass chamber 310, so as to obtain a broad-spectrum pulse laser S4. In order to broaden the spectral width of the amplified seed laser S3, the spectral stretcher 300 of the pulse amplifying device includes a multipass chamber 310 and a sixth laser crystal 320, the sixth laser crystal 320 being housed inside the multipass chamber 310, this advantageously enables multiple non-linear spectral broadening of the amplified seed laser S3 within the multipass chamber 310, the amplified seed laser S3 travels through the sixth laser crystal 320 each round trip through the multipass chamber 310, the spectral width of the seed laser S2 can be broadened by the sixth laser crystal 320, this makes it possible to obtain a broad-spectrum pulse laser beam S4, wherein the sixth laser crystal 320 is a YAG crystal, the YAG crystal is a nonlinear optical crystal, so that the spectral width of the seed laser S2 can be conveniently broadened, and the broad-spectrum pulse laser S4 meeting the requirement is obtained. In some embodiments, the amplified seed laser S3 may be reflected 51 times back and forth in the multipass chamber 310, that is, the amplified seed laser S3 passes through YAG crystal 51 times, so that the spectral width of the seed laser S2 can be broadened to 150GHz, thereby obtaining a desired broad-spectrum pulsed laser S4. For example, as shown in fig. 4, after the amplified seed laser S3 enters the spectrum stretcher 300, the amplified seed laser S3 undergoes 4 times of nonlinear spectrum stretching, that is, the amplified seed laser S3 undergoes a first nonlinear spectrum stretching to change from the light L1 to the light L2, undergoes a second nonlinear spectrum stretching to change from the light L2 to the light L3, undergoes a third nonlinear spectrum stretching to change from the light L3 to the light L4, and undergoes a fourth nonlinear spectrum stretching to change from the light L4 to the light L5, so as to obtain a broad-spectrum pulsed laser S4, so that the broad-spectrum pulsed laser S4 can be further compressed by the pulse compressor 400, so as to obtain a final pulsed laser, it should be noted that the pulse compressor 400 may include a dispersion element, and the dispersion is compensated by the dispersion element. In some embodiments, the pulse compressor 400 may be at least one of a grating, a volume grating, and a prism. For example, the pulse compressor 400 includes a transmission type grating having a groove density of 1600 lines/mm, which can rapidly compress laser light to improve the operation efficiency. Thus, after the broad spectrum pulsed laser S4 passes through the pulse compressor 400, the pulse width of the broad spectrum pulsed laser S4 is compressed faster, resulting in a higher energy femtosecond laser.
In a second aspect, the present invention further provides a laser having the above pulse amplifying device. According to the utility model discloses laser instrument has following beneficial effect at least: the laser adopts the pulse amplification device, a pulse seed source of the pulse amplification device absorbs the pump light S1 and converts the pump light S1 into the seed laser S2, the signal of the seed laser S2 is a Fourier transform limited pulse signal, the laser amplifier amplifies the seed laser S2 under the action of the pump light S1 to obtain the amplified seed laser S3, and then the spectrum stretcher stretches the spectral width of the amplified seed laser S3 to obtain the wide-spectrum pulse laser S4, so that the pulse compressor can compress the wide-spectrum pulse laser S4 to obtain the final pulse laser, and the seed laser S2 generated by the pulse seed source can be amplified to obtain high-pulse-energy laser with lower cost.
In a third aspect, the present invention further provides an electronic device having the above laser. According to the utility model discloses electronic equipment has following beneficial effect at least: the electronic equipment adopts the laser, the pumping light S1 is absorbed by the pulse seed source, the pumping light S1 is converted into the seed laser S2, the signal of the seed laser S2 is a Fourier transform limited pulse signal, the laser amplifier amplifies the seed laser S2 under the action of the pumping light S1 to obtain the amplified seed laser S3, the spectrum stretcher stretches the spectrum width of the amplified seed laser S3 to obtain the wide-spectrum pulse laser S4, and the pulse compressor can compress the wide-spectrum pulse laser S4 to obtain the final pulse laser, so that the seed laser S2 generated by the pulse seed source can be amplified to obtain the high-pulse-energy laser, and the cost is low.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art. Furthermore, the embodiments of the present invention and features of the embodiments may be combined with each other without conflict.
Claims (10)
1. Pulse amplification apparatus, characterized by comprising:
the pulse seed source is used for absorbing pump light and converting the pump light into seed laser, wherein a signal of the seed laser is a Fourier transform limited pulse signal;
the laser amplifier is used for amplifying the seed laser under the action of the pump light to obtain amplified seed laser;
the spectrum stretcher is connected with the laser amplifier and used for stretching the spectral width of the amplified seed laser to obtain wide-spectrum pulse laser;
the pulse compressor is connected with the spectrum stretcher and used for compressing the broad spectrum pulse laser to obtain the final pulse laser.
2. The pulse amplification device of claim 1, wherein the pulse seed source further comprises:
a microchip crystal assembly; the microchip crystal assembly is used for converting the pump light into seed laser;
and the light beam adjusting assembly is connected with the microchip crystal assembly and is used for adjusting the wavelength of the seed laser.
3. The pulse amplification device of claim 2, wherein the microchip crystal assembly comprises a first laser amplification crystal, a second laser amplification crystal, a third laser amplification crystal and a fourth laser amplification crystal, and the first laser amplification crystal, the second laser amplification crystal, the third laser amplification crystal and the fourth laser amplification crystal are connected in sequence.
4. The pulse amplifying device according to claim 2, wherein the beam conditioning assembly comprises at least one of a dichroic mirror, an output coupling mirror, a lens, and a diffractive optical element.
5. The pulse amplifying device according to claim 1, wherein the laser amplifier includes a fifth laser crystal, and the fifth laser crystal is configured to amplify the seed laser under the action of the pump light to obtain an amplified seed laser.
6. The pulse amplifying device according to claim 5, wherein an antireflection film is provided on the fifth laser crystal.
7. The pulse amplification apparatus of claim 1, wherein the spectral stretcher comprises:
a multi-pass chamber;
and the sixth laser crystal is accommodated in the multi-pass chamber and is used for performing multiple times of nonlinear spectrum broadening on the amplified seed laser through the sixth laser crystal in the multi-pass chamber to obtain the wide-spectrum pulse laser.
8. A pulse amplifying device according to any one of claims 1 to 7, wherein said pulse compressor is at least one of a grating, a volume grating and a prism.
9. Laser, characterized in that it comprises a pulse amplification device according to any one of claims 1 to 8.
10. An electronic device comprising the laser of claim 9.
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| CN112909724A (en) * | 2021-01-18 | 2021-06-04 | 深圳技术大学 | Pulse amplification device, laser and equipment |
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| CN112909724A (en) * | 2021-01-18 | 2021-06-04 | 深圳技术大学 | Pulse amplification device, laser and equipment |
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