CN214300329U - Prevent brilliant accuse probe of strong electromagnetic interference - Google Patents
Prevent brilliant accuse probe of strong electromagnetic interference Download PDFInfo
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- CN214300329U CN214300329U CN202023206582.9U CN202023206582U CN214300329U CN 214300329 U CN214300329 U CN 214300329U CN 202023206582 U CN202023206582 U CN 202023206582U CN 214300329 U CN214300329 U CN 214300329U
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Abstract
The utility model relates to a thick controller technical field of quartz crystal film provides a prevent brilliant accuse probe of strong electromagnetic interference, including the probe body, this internal crystal oscillator plate that is equipped with of probe, crystal oscillator plate orientation detection mouth, its characterized in that, detection mouth department are equipped with the shielding grid. Through the technical scheme, the problem that the quartz crystal film thickness controller in the prior art is unstable in work and even cannot work normally in magnetron sputtering equipment is solved.
Description
Technical Field
The utility model relates to a thick controller technical field of quartz crystal membrane, it is specific, relate to a prevent brilliant accuse probe of strong electromagnetic interference.
Background
The basic principle of a quartz crystal film thickness controller (hereinafter referred to as crystal control) is as follows: the piezoelectric effect of quartz crystal is used for measuring the deposition rate and thickness of the nanometer-level thickness film in the vacuum coating process in real time. The crystal oscillator plate arranged in the crystal control probe and the resonance circuit arranged in the crystal control oscillation package form a quartz crystal resonance circuit, the crystal control probe is arranged at a position close to the substrate to be coated, therefore, when the film deposition is carried out, the surface of the crystal oscillator plate and the substrate to be coated synchronously deposit the film, the deposited film changes the quality of the crystal oscillator plate and the resonance frequency, the quality of the deposited film can be calculated according to the change of the resonance frequency, and the thickness and the deposition rate of the deposited film can be calculated under the condition of the known density of the film material. Most controllers also have the capability of controlling the thin film deposition process, including: the deposition rate is feedback controlled to be stabilized at a set value; and giving a coating stop signal when the set film thickness is reached, and stopping deposition. At present, a quartz crystal film thickness controller is mostly used for evaporation equipment, such as electron beam evaporation equipment or resistance evaporation equipment, and is rarely used for magnetron sputtering equipment. One of the important reasons is that high-density plasma exists near the sputtering cathode during magnetron sputtering, and the magnetron sputtering substrate is close to the sputtering source (generally, the distance is less than 200 mm), in this case, the electromagnetic interference is much stronger than electron beam evaporation for crystal control, so that the problem that the crystal control is easy to work and unstable or even impossible exists.
SUMMERY OF THE UTILITY MODEL
The utility model provides a prevent brilliant accuse probe of strong electromagnetic interference has solved the thick controller of quartz crystal among the prior art work unstability in magnetron sputtering equipment, the problem of unable normal work even.
The technical scheme of the utility model as follows:
the strong electromagnetic interference preventing crystal control probe comprises a probe body, wherein a crystal oscillator plate is arranged in the probe body and faces a detection port, and the strong electromagnetic interference preventing crystal control probe is characterized in that a shielding grid mesh is arranged at the detection port.
Further, the shielding grid is a stainless steel grid.
Furthermore, the shielding grid mesh is a 1mm multiplied by 1mm grid mesh.
Further, the probe body includes:
the probe base is provided with a connecting electrode, and the connecting electrode is used for being connected to the oscillation package;
the crystal oscillator clamping seat is arranged on the probe base and is provided with the detection port;
the crystal oscillator piece is arranged in the crystal oscillator clamping seat, one surface of the crystal oscillator piece faces the detection port, and the other surface of the crystal oscillator piece is electrically connected with the connecting electrode.
Furthermore, a cooling water channel is arranged in the probe base.
Further, still include:
the insulating clip is arranged in the crystal oscillator clamping seat, and a first metal elastic sheet is arranged on the insulating clip;
the probe base is provided with a second metal elastic sheet, and the second metal elastic sheet is connected with the connecting electrode;
the first metal elastic sheet is pressed on one surface, far away from the detection port, of the crystal oscillator sheet and is electrically connected with the crystal oscillator sheet, the second metal elastic sheet is pressed on the insulating clamp, and the second metal elastic sheet is electrically connected with the first metal elastic sheet.
The utility model discloses a theory of operation and beneficial effect do:
1. the adoption sets up the shielding grid of ground connection in the probe department, and the shielding grid can play effectual electromagnetic shield's effect, makes the crystal oscillator piece not receive electromagnetic interference to make under the strong electromagnetic interference condition, the thick controller of quartz crystal membrane can normally work. And after the shielding grid is added, the mass of the film deposited on the crystal oscillator plate can be reduced, so that the reduction speed of the resonance frequency of the crystal oscillator plate can be delayed, and the service life of the crystal oscillator plate is prolonged.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic structural view of a probe body;
FIG. 2 is an application scenario of a crystal control probe for preventing strong electromagnetic interference;
in the figure: 1 probe body, 11 probe bases, 111 cooling water channels, 112 second metal elastic sheets, 12 crystal oscillator clamping seats, 13 crystal oscillator sheets, 14 connecting electrodes, 15 shielding grids, 16 insulating clamps, 161 first metal elastic sheets, 2 oscillation packs, 3 film thickness controllers, 4 sputtering cathodes and 5 substrates.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive work, are related to the scope of the present invention.
As shown in the figures 1-2 of the drawings,
the strong electromagnetic interference preventing crystal control probe comprises a probe body 1, wherein a crystal oscillator piece 13 is arranged in the probe body 1, and the crystal oscillator piece 13 faces a detection port, and is characterized in that a shielding grid 15 is arranged at the detection port.
The distance (source base distance) between a magnetron sputtering source of the magnetron sputtering device and the substrate 5 is much closer than that of the evaporation device, the magnetron sputtering source base distance is generally between 50 and 200mm, the source base distance of the evaporation device is generally between 500 and 1000mm, and plasma can be generated during magnetron sputtering operation, so that stronger electromagnetic interference exists, especially when high-power high-frequency sputtering or radio-frequency sputtering is carried out, the electromagnetic interference is stronger, and the conventional crystal control cannot stably work.
When the magnetron sputtering device is in work, the surface of the sputtering cathode generates plasma, sputtering voltage is applied to a sputtering target (negative voltage), negative sputtering voltage attracts ions in the plasma to accelerate and fly to the target, the ions bombard out atoms on the surface of the target, and negative sputtering voltage pushes out electrons in the plasma in a direction away from the target. When the quartz crystal film thickness controller 3 is applied to a magnetron sputtering device, a capacitance relation is actually formed between a sputtering target material and the crystal oscillator plate 13, the target material and the crystal oscillator plate 13 are two electrodes of the capacitor, and compared with the plasma, the impedance between the two electrodes of the capacitor is greatly reduced. When a high voltage (high-power direct-current sputtering) or a high-power high-frequency sputtering voltage is applied to the target material, a voltage is induced on the surface of the crystal oscillator piece 13, and the normal operation of crystal control is affected under the condition of a large induced voltage.
The adoption sets up grounded shielding grid 15 at the probe's probe department, and shielding grid 15 can play effectual electromagnetic shield's effect, makes crystal oscillator piece 13 not receive electromagnetic interference to make under the strong electromagnetic interference condition, quartz crystal membrane thickness controller 3 can normally work. And after the shielding grid 15 is added, the amount of the film deposited on the crystal oscillator piece 13 can be reduced, so that the reduction speed of the resonance frequency of the crystal oscillator piece 13 can be delayed, and the service life of the crystal oscillator piece 13 is prolonged.
Since the shielding grid 15 will shield a part of the film deposited on the crystal oscillator plate 13, the specification of the shielding grid 15 needs to be kept consistent and the installation position needs to be fixed consistent, so that the ratio of the shielded film is a fixed coefficient, and the film thickness is converted by multiplying the fixed coefficient by a fixed correction coefficient.
The shielding grid 15 is made of conductive materials which are not easy to oxidize, the materials can play a role in electromagnetic shielding when being conductive, the materials are not easy to oxidize to avoid the materials from being oxidized to lose conductivity, 304 stainless steel can be used for manufacturing the grid, the grid has good conductivity and oxidation resistance, the grid is cheap and easy to process, and the 304 stainless steel is a common material inside a semiconductor equipment process chamber.
The finer the meshes of the shielding grid 15, the better the electromagnetic shielding effect, and in order to effectively shield the electromagnetic interference, the meshes of the shielding grid 15 should be smaller, and a 1mm × 1mm mesh grid can be selected.
With the increase of the service time, the thickness of the film deposited on the surface of the shielding grid 15 is gradually increased, for example, to dozens of microns, the stress of the film is correspondingly increased along with the increase of the thickness of the surface film layer of the shielding grid 15, the film is easy to crack and fall off to form dust, and particulate matter pollution is caused to a vacuum chamber, so the shielding grid 15 needs to be replaced regularly. The frequency of replacement is generally not such that the total deposited film thickness of the shielding mesh 15 exceeds 20 microns, depending on the particular conditions of use.
The probe body 1 includes:
the probe base 11 is provided with a connecting electrode 14, and the connecting electrode 14 is used for being connected to the oscillation bag 2;
a crystal oscillator cassette 12 provided on the probe base 11 and having a probe port;
the crystal oscillator piece 13 is arranged in the crystal oscillator card holder 12, one surface of the crystal oscillator piece faces the detection port, and the other surface of the crystal oscillator piece is electrically connected with the connecting electrode 14.
A cooling water channel 111 is arranged in the probe base 11, and the probe is cooled by circulating cold water in the cooling water channel, so that the temperature of the crystal oscillation piece is kept stable.
Further comprising:
the insulating clip 16 is arranged in the crystal oscillator card seat 12, and a first metal elastic sheet 161 is arranged on the insulating clip;
a second metal elastic sheet 112 is arranged on the probe base 11, and the second metal elastic sheet 112 is connected with the connecting electrode 14;
the first metal dome 161 is pressed on the side of the crystal oscillator plate 13 away from the detection port and electrically connected to the crystal oscillator plate, the second metal dome 112 is pressed on the insulating clip 16, and the second metal dome 112 is electrically connected to the first metal dome 161.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A crystal control probe for preventing strong electromagnetic interference comprises a probe body (1), wherein the probe body (1) comprises:
the probe comprises a probe base (11), wherein a connecting electrode (14) is arranged on the probe base (11), and the connecting electrode (14) is used for being connected to an oscillating bag (2);
the crystal oscillator clamping seat (12) is arranged on the probe base (11) and is provided with a detection port;
the crystal oscillator piece (13) is arranged in the crystal oscillator clamping seat (12), one surface of the crystal oscillator piece (13) faces the detection port, and the other surface of the crystal oscillator piece is electrically connected with the connecting electrode (14);
the device is characterized in that a shielding grid (15) is arranged at the position of the detection port.
2. A crystal control probe for preventing strong electromagnetic interference according to claim 1, wherein said shielding grid (15) is a stainless steel grid.
3. A crystal control probe for preventing strong electromagnetic interference according to claim 1, characterized in that said shielding grid (15) is a 1mm x 1mm grid.
4. A crystal control probe for preventing strong electromagnetic interference according to any one of claims 1-3, characterized in that a cooling water channel (111) is arranged in the probe base (11).
5. A crystal control probe for preventing strong electromagnetic interference according to any one of claims 1 to 3, further comprising:
the insulating clip (16) is arranged in the crystal oscillator clamping seat (12), and a first metal elastic sheet (161) is arranged on the insulating clip;
a second metal elastic sheet (112) is arranged on the probe base (11), and the second metal elastic sheet (112) is connected with the connecting electrode (14);
the first metal elastic sheet (161) is pressed on one surface, far away from the detection port, of the crystal oscillator sheet (13) and is electrically connected with the crystal oscillator sheet (13), the second metal elastic sheet (112) is pressed on the insulating clamp (16), and the second metal elastic sheet (112) is electrically connected with the first metal elastic sheet (161).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023206582.9U CN214300329U (en) | 2020-12-26 | 2020-12-26 | Prevent brilliant accuse probe of strong electromagnetic interference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023206582.9U CN214300329U (en) | 2020-12-26 | 2020-12-26 | Prevent brilliant accuse probe of strong electromagnetic interference |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214300329U true CN214300329U (en) | 2021-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023206582.9U Active CN214300329U (en) | 2020-12-26 | 2020-12-26 | Prevent brilliant accuse probe of strong electromagnetic interference |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214300329U (en) |
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2020
- 2020-12-26 CN CN202023206582.9U patent/CN214300329U/en active Active
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