CN214247226U - Polycrystalline diamond compact - Google Patents
Polycrystalline diamond compact Download PDFInfo
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- CN214247226U CN214247226U CN202120178241.0U CN202120178241U CN214247226U CN 214247226 U CN214247226 U CN 214247226U CN 202120178241 U CN202120178241 U CN 202120178241U CN 214247226 U CN214247226 U CN 214247226U
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- polycrystalline diamond
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- diamond compact
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Abstract
The utility model belongs to the drilling engineering field especially relates to a polycrystalline diamond compact. The utility model provides a polycrystalline diamond compact which is a cylinder, comprising a polycrystalline diamond layer, a cobalt-rich hard alloy transition layer and a hard alloy substrate layer which are contacted in sequence; the bottom surface of the cobalt-rich hard alloy transition layer is provided with an inner recess; and the top surface of the hard alloy substrate layer is provided with a bulge matched with the concave part. The utility model provides a polycrystalline diamond compact has increased interior thin outer thick rich cobalt carbide transition layer as the intermediate layer on traditional polycrystalline diamond compact basis, can be in the balanced compound piece synthetic process of to a great extent carbide and near polycrystalline diamond layer juncture carbide's cobalt runoff volume, avoids appearing poor cobalt district in the juncture of carbide and polycrystalline diamond layer to improve polycrystalline diamond compact's impact toughness and stability by a wide margin.
Description
Technical Field
The utility model belongs to the drilling engineering field especially relates to a polycrystalline diamond compact.
Background
Polycrystalline Diamond Compact (PDC) is formed by sintering diamond micro powder and a hard alloy (WC-Co) matrix sheet under the conditions of high pressure and high temperature, belongs to a composite material, has the high hardness, high wear resistance and heat conductivity of diamond and the impact toughness of hard alloy, and is an ideal material for manufacturing cutting tools, drilling bits and other wear-resistant tools.
Along with the development of the market and the expansion of the drilling range, the drilling efficiency is higher and higher, the stratum where the polycrystalline diamond compact works is more and more complex, and the requirements of customers on the impact toughness and the stability of the product are higher and higher. Improving the impact toughness and stability of the product has been a goal of industry workers.
For Polycrystalline Diamond Compacts (PDC), the impact toughness is manifested primarily in cemented carbide (WC-Co), which is primarily in the content of cobalt (Co) as its internal binder. The production and manufacturing of the polycrystalline diamond compact in the prior art are that diamond micro powder and hard alloy with certain cobalt (Co) content are sintered at high temperature and high pressure, and cobalt in the hard alloy is promoted to enter a diamond layer under the condition of high temperature and high pressure, so that the diamond layer micro powder forms a D-D bond under the action of catalyst cobalt to form the polycrystalline diamond layer.
However, in the high-temperature and high-pressure synthesis process, the heat transfer of the polycrystalline diamond compact is from the outside to the inside of the compact, and the cobalt in the hard alloy is urged to flow from the outside to the inside of the compact, that is, in the synthesis process, the loss of the cobalt outside the hard alloy is greater than that of the cobalt inside the hard alloy, so that a cobalt-poor region is easily formed outside the junction with the polycrystalline diamond layer, and the product generates stress defects in the cobalt-poor region, thereby seriously affecting the impact toughness and stability of the product, and easily causing the phenomena of sheet delamination, cracks, sheet collapse and the like in the actual working process.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model aims at providing a polycrystalline diamond compact, the utility model provides a polycrystalline diamond compact has good impact toughness and stability.
The utility model provides a polycrystalline diamond compact, which is a cylinder and comprises a polycrystalline diamond layer, a cobalt-rich hard alloy transition layer and a hard alloy substrate layer which are contacted in sequence;
the bottom surface of the cobalt-rich hard alloy transition layer is provided with an inner recess;
and the top surface of the hard alloy substrate layer is provided with a bulge matched with the concave part.
Preferably, the concave central area is a circular plane parallel to the radial direction.
Preferably, an arc surface is arranged between the circular plane and the bottom surface edge of the cobalt-rich hard alloy transition layer.
Preferably, the arc surface protrudes outward toward the cemented carbide substrate layer.
Preferably, the height from the edge of the bottom surface of the cobalt-rich hard alloy transition layer to the top surface of the cobalt-rich hard alloy transition layer is 30-50% of the total height of the cobalt-rich hard alloy transition layer and the hard alloy substrate layer.
Preferably, the distance between the circular plane and the top surface of the cobalt-rich hard alloy transition layer is 15-35% of the total height of the cobalt-rich hard alloy transition layer and the hard alloy substrate layer.
Preferably, the diameter of the circular plane is 30-60% of the diameter of the polycrystalline diamond compact.
Preferably, the diameter of the polycrystalline diamond compact is 10-30 mm.
Preferably, the total height of the cobalt-rich hard alloy transition layer and the hard alloy base body layer is 6-16 mm.
Preferably, the total height of the polycrystalline diamond compact is 8-20 mm.
Compared with the prior art, the utility model provides a polycrystalline diamond compact. The utility model provides a polycrystalline diamond compact which is a cylinder, comprising a polycrystalline diamond layer, a cobalt-rich hard alloy transition layer and a hard alloy substrate layer which are contacted in sequence; the bottom surface of the cobalt-rich hard alloy transition layer is provided with an inner recess; and the top surface of the hard alloy substrate layer is provided with a bulge matched with the concave part. The utility model provides a polycrystalline diamond compact has increased interior thin outer thick rich cobalt carbide transition layer as the intermediate layer on traditional polycrystalline diamond compact basis, can be in the balanced compound piece synthetic process of to a great extent carbide and near polycrystalline diamond layer juncture carbide's cobalt runoff volume, avoids appearing poor cobalt district in the juncture of carbide and polycrystalline diamond layer to improve polycrystalline diamond compact's impact toughness and stability by a wide margin.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a polycrystalline diamond compact according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The utility model provides a polycrystalline diamond compact, which is a cylinder and comprises a polycrystalline diamond layer, a cobalt-rich hard alloy transition layer and a hard alloy substrate layer which are contacted in sequence; the bottom surface of the cobalt-rich hard alloy transition layer is provided with an inner recess; and the top surface of the hard alloy substrate layer is provided with a bulge matched with the concave part.
Referring to fig. 1, fig. 1 is a schematic view of a cross-sectional structure of a polycrystalline diamond compact provided in an embodiment of the present invention, where 1 is a polycrystalline diamond layer, 2 is a cobalt-rich cemented carbide transition layer, and 3 is a cemented carbide substrate layer.
The utility model provides a polycrystalline diamond compact is the cylinder size, and it specifically includes polycrystalline diamond layer 1, rich cobalt carbide transition layer 2 and carbide base member layer 3 that contact in proper order. The cobalt-rich hard alloy transition layer 2 and the hard alloy matrix layer 3 are made of hard alloys with different cobalt contents, the cobalt content of the cobalt-rich hard alloy transition layer 2 is higher than that of the hard alloy matrix layer 3, the cobalt content of the cobalt-rich hard alloy transition layer 2 is generally controlled to be 12-20 wt%, and the cobalt content of the hard alloy matrix layer 3 is generally controlled to be 10-16 wt%. In the utility model, the hard alloy with different cobalt contents is the current commercial material, and the utility model does not relate to the improvement of the hard alloy material components.
In the utility model, the bottom surface of the cobalt-rich hard alloy transition layer 2 is provided with an inner recess, and the top surface of the hard alloy substrate layer 3 is provided with a bulge matched with the inner recess; the central area of the recess is preferably a circular plane parallel to the radial direction; the preferable cambered surface is arranged between the circular plane and the bottom surface edge of the cobalt-rich hard alloy transition layer 2; the arc surface is preferably convex towards the cemented carbide substrate layer 3.
In the present invention, the height from the bottom edge of the cobalt-rich cemented carbide transition layer 2 to the top surface of the cobalt-rich cemented carbide transition layer 2 is preferably 30 to 50% of the total height of the cobalt-rich cemented carbide transition layer 2 and the cemented carbide base layer 3, and specifically may be 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49% or 50%; when the concave central region of the bottom surface of the cobalt-rich cemented carbide transition layer 2 is a circular plane, the height of the circular plane from the top surface of the cobalt-rich cemented carbide transition layer 2 is preferably 15-35% of the total height of the cobalt-rich cemented carbide transition layer 2 and the cemented carbide base layer 3, and specifically may be 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34% or 35%.
In the present invention, when the concave central region of the bottom surface of the cobalt-rich cemented carbide transition layer 2 is a circular plane, the diameter of the circular plane is preferably 30-60% of the diameter of the polycrystalline diamond compact, and specifically may be 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49%, 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, or 60%.
The utility model discloses in, polycrystalline diamond compact's overall height is preferred 8 ~ 20mm, specifically can be 8mm, 8.5mm, 9mm, 9.5mm, 10mm, 10.5mm, 11mm, 11.5mm, 12mm, 12.5mm, 13mm, 13.5mm, 14mm, 14.5mm, 15mm, 15.5mm, 16mm, 16.5mm, 17mm, 17.5mm, 18mm, 18.5mm, 19mm, 19.5mm or 20 mm.
In the utility model, the total height of the cobalt-rich cemented carbide transition layer 2 and the cemented carbide substrate layer 3 is preferably 6-16 mm, and specifically can be 6mm, 6.5mm, 7mm, 7.5mm, 8mm, 8.5mm, 9mm, 9.5mm, 10mm, 10.5mm, 11mm, 11.5mm, 12mm, 12.5mm, 13mm, 13.5mm, 14mm, 14.5mm, 15mm, 15.5mm or 16 mm;
the utility model discloses in, polycrystalline diamond compact's diameter is preferred 10 ~ 30mm, specifically can be 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm, 21mm, 22mm, 23mm, 24mm, 25mm, 26mm, 27mm, 28mm, 29mm or 30 mm.
The utility model provides a polycrystalline diamond compact has increased interior thin outer thick rich cobalt carbide transition layer as the intermediate layer on traditional polycrystalline diamond compact basis, can be in the balanced compound piece synthetic process of to a great extent carbide and near polycrystalline diamond layer juncture carbide's cobalt runoff volume, avoids appearing poor cobalt district in the juncture of carbide and polycrystalline diamond layer to improve polycrystalline diamond compact's impact toughness and stability by a wide margin.
For the sake of clarity, the following examples are given in detail.
Example 1
This example provides a polycrystalline diamond compact of the structure shown in fig. 1, product number 1613; the composite sheet is a cylindrical body and comprises a polycrystalline diamond layer 1, a cobalt-rich hard alloy transition layer 2 and a hard alloy base layer 3 which are sequentially contacted, wherein the bottom surface of the cobalt-rich hard alloy transition layer 2 is provided with an inner recess, the central area of the inner recess is a circular plane parallel to the radial direction, an arc surface is arranged between the circular plane and the edge of the bottom surface of the cobalt-rich hard alloy transition layer 2, and the arc surface protrudes towards the hard alloy base layer 3;
in this embodiment, the total height of the polycrystalline diamond compact is 13.2 ± 0.04mm, the height of the polycrystalline diamond layer 1 is 2.0 ± 0.2mm, the total height of the cobalt-rich hard alloy transition layer 2 and the hard alloy substrate layer 3 is 11.2mm, the height from the edge of the bottom surface of the cobalt-rich hard alloy transition layer 2 to the top surface of the cobalt-rich hard alloy transition layer 2 is 5mm, and the height from the circular plane of the concave central region of the bottom surface of the cobalt-rich hard alloy transition layer 2 to the top surface of the cobalt-rich hard alloy transition layer 2 is 2 mm;
in this embodiment, the outer diameter of the polycrystalline diamond compact is 15.88 ± 0.03mm, and the diameter of the circular plane of the concave central region on the bottom surface of the cobalt-rich cemented carbide transition layer 2 is 7 mm;
in this embodiment, the cobalt content of the cobalt-rich cemented carbide transition layer 2 is 16 wt%, and the cobalt content of the cemented carbide base layer 3 is 13 wt%.
The polycrystalline diamond compact that this embodiment provided has increased interior thin outer thick rich cobalt carbide transition layer 2 as the intermediate layer on traditional polycrystalline diamond compact basis, can be in the balanced compound piece synthetic process of to a great extent near hard alloy's of hard alloy and polycrystalline diamond layer juncture cobalt loss volume, avoids appearing poor cobalt district at the juncture of hard alloy and polycrystalline diamond layer to improve polycrystalline diamond compact's impact toughness and stability by a wide margin.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A polycrystalline diamond compact is a cylinder and is characterized by comprising a polycrystalline diamond layer, a cobalt-rich hard alloy transition layer and a hard alloy base layer which are sequentially contacted;
the bottom surface of the cobalt-rich hard alloy transition layer is provided with an inner recess;
and the top surface of the hard alloy substrate layer is provided with a bulge matched with the concave part.
2. The polycrystalline diamond compact of claim 1, wherein the concave central region is a circular plane parallel to a radial direction.
3. The polycrystalline diamond compact of claim 2, wherein an arc is formed between the circular plane and the bottom edge of the cobalt-rich cemented carbide transition layer.
4. The polycrystalline diamond compact of claim 3, wherein the arcuate surface is convex toward the cemented carbide substrate layer.
5. The polycrystalline diamond compact of claim 1, wherein the height of the bottom edge of the cobalt-rich cemented carbide transition layer from the top surface of the cobalt-rich cemented carbide transition layer is 30-50% of the total height of the cobalt-rich cemented carbide transition layer and the cemented carbide substrate layer.
6. The polycrystalline diamond compact of claim 2, wherein the height of the circular plane from the top surface of the cobalt-rich cemented carbide transition layer is 15-35% of the total height of the cobalt-rich cemented carbide transition layer and the cemented carbide substrate layer.
7. A polycrystalline diamond compact according to claim 2, wherein the diameter of the circular plane is 30-60% of the diameter of the polycrystalline diamond compact.
8. The polycrystalline diamond compact of claim 1, wherein the polycrystalline diamond compact has a diameter of 10mm to 30 mm.
9. The polycrystalline diamond compact of claim 1, wherein the total height of the cobalt-rich cemented carbide transition layer and the cemented carbide substrate layer is 6-16 mm.
10. The polycrystalline diamond compact of claim 1, wherein the total height of the polycrystalline diamond compact is 8mm to 20 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120178241.0U CN214247226U (en) | 2021-01-22 | 2021-01-22 | Polycrystalline diamond compact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120178241.0U CN214247226U (en) | 2021-01-22 | 2021-01-22 | Polycrystalline diamond compact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214247226U true CN214247226U (en) | 2021-09-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120178241.0U Active CN214247226U (en) | 2021-01-22 | 2021-01-22 | Polycrystalline diamond compact |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214247226U (en) |
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2021
- 2021-01-22 CN CN202120178241.0U patent/CN214247226U/en active Active
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