CN214201194U - Silicon wafer laser cutting heat damage detection device - Google Patents
Silicon wafer laser cutting heat damage detection device Download PDFInfo
- Publication number
- CN214201194U CN214201194U CN202120150420.3U CN202120150420U CN214201194U CN 214201194 U CN214201194 U CN 214201194U CN 202120150420 U CN202120150420 U CN 202120150420U CN 214201194 U CN214201194 U CN 214201194U
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- laser cutting
- raman scattering
- detection device
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The utility model provides a silicon wafer laser cutting thermal damage detection device, which comprises a wafer carrying platform for placing a silicon wafer, a detection position acquisition unit for acquiring the laser cutting edge of the silicon wafer and a Raman scattering spectrum detection unit; raman scattering spectrum detecting element has the laser source who provides Raman scattering spectrum detection incident light, is located objective of slide holder top, with objective cooperation supplies Raman scattering light transmission's light path and is used for realizing Raman scattering light detection's detector, based on the utility model provides a silicon chip laser cutting heat damage detection device can provide one kind and be different from prior art to the heat influence detection mode of silicon chip laser cutting edge one side, can more accurately acquire the heat influence of laser cutting to the silicon chip through this side, accords with the industry and to the increasingly high quality demand of photovoltaic product.
Description
Technical Field
The utility model relates to a photovoltaic field of making especially relates to a silicon chip laser cutting heat damage detection device.
Background
With the development of the photovoltaic industry, the whole cell is divided into a plurality of segmented cells, and then the solar photovoltaic module is prepared from the segmented cells, so that the resistance loss of the module can be reduced, the density of the module packaging cells (such as a tile-stacked module) can be improved, and the efficiency of the solar photovoltaic module can be effectively improved. At present, the split battery is generally split in a laser cutting mode in the forming process, and one specific implementation mode is as follows: the silicon wafer is cracked by adopting a mode of matching laser scribing with cooling circulation, namely the silicon wafer/battery piece is cracked into two or more pieces through stress, so that the damage of the laser cutting to the silicon wafer is reduced to the greatest extent. However, due to the influence of high energy of laser, local lattice distortion and even melting of the edge of the silicon wafer after splitting can be unavoidable, and further the mechanical property of the silicon wafer and the photoelectric conversion efficiency of the cell are influenced. In order to better control the quality of silicon wafer fragments, the quality of the fragments at the edges of the silicon wafer fragments needs to be detected, in the prior art, the surface morphology is detected in a mode of observing by using an optical microscope, but the mode can only detect the serious melting condition of the silicon wafer, and can not detect the changes such as lattice distortion and the like with small degree.
In view of the above, there is a need to provide an improved solution to the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that prior art exists at least, for realizing the above-mentioned utility model purpose, the utility model provides a silicon chip laser cutting heat damage detecting device, its concrete design as follows.
A silicon wafer laser cutting thermal damage detection device comprises a wafer carrying table for placing a silicon wafer, a detection position acquisition unit for acquiring a laser cutting edge of the silicon wafer and a Raman scattering spectrum detection unit; the Raman scattering spectrum detection unit is provided with a laser light source for providing Raman scattering spectrum to detect incident light, an objective lens positioned above the slide holder, a light path matched with the objective lens for transmitting Raman scattering light, and a detector for realizing Raman scattering light detection.
Further, the wafer carrying table is provided with a carrying plate for carrying a silicon wafer and a moving frame arranged below the carrying plate, and the moving frame is provided with a vertical moving shaft for driving the carrying plate to move up and down.
Further, the detection device also comprises a conveying unit, the conveying unit is provided with a conveying belt used for conveying the silicon wafer to the wafer carrying platform, and the wafer carrying platform is provided with an initial state that the top surface is lower than the upper surface of the conveying belt and a jacking state that the top surface is higher than the upper surface of the conveying belt.
Further, the conveying unit is provided with a sensor for sensing the silicon wafer to enter the upper part of the support plate and controlling the support plate to jack up the silicon wafer.
Further, the moving frame is also provided with a transverse moving shaft which drives the carrier plate to move along the horizontal direction perpendicular to the length direction of the laser cutting edge of the silicon wafer.
Further, the moving frame is also provided with a longitudinal moving shaft which drives the carrier plate to move along the length direction of the laser cutting edge of the silicon wafer.
Further, the detection device is also provided with an imaging unit which is matched with the objective lens to display the surface topography of the silicon wafer.
Further, the detection position acquisition unit is a visual camera arranged on the upper side of the slide holder.
Further, the detection device also comprises a control unit for controlling the operation of the detection position acquisition unit and the operation of the Raman scattering spectrum detection unit.
The utility model has the advantages that: based on the utility model provides a silicon chip laser cutting heat damage detection device can provide one kind and be different from prior art to the heat influence detection mode of silicon chip laser cutting edge one side, can more accurately acquire the heat influence of laser cutting to the silicon chip through this mode, accords with the industry sector to the increasingly high quality demands of photovoltaic product.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a top view of a silicon wafer, a conveyor belt, and a stage according to the present invention;
FIG. 2 is a schematic view showing the structure of the device for detecting thermal damage in laser cutting of silicon wafers according to the present invention;
FIG. 3 is a schematic view illustrating an operation state of the laser cutting thermal damage detection apparatus for silicon wafer shown in FIG. 2;
FIG. 4 is a schematic diagram of a silicon wafer with multiple probing paths;
FIG. 5 is a schematic cross-sectional view of Raman scattered light detection at A-A' of FIG. 4;
FIG. 6 is a comparison of Raman spectra of different silicon;
fig. 7 is a graph showing the variation of the central position shift value of the raman peak with respect to the detection position in a single detection result.
In the figure, 100 is a silicon wafer, 10 is a heat affected zone, 10a is a detection path, 11 is a laser cutting edge, 200 is a conveyor belt, 300 is a stage, 31 is a carrier plate, 32 is a moving frame, 320 is a vertical moving axis, 400 is a raman scattering spectrum detection unit, 41 is a laser light source, 42 is a filter, 43 is an objective lens, 44 is a parabolic mirror, 45 is a monochromator, 46 is a detector, 500 is a vision camera, and 600 is a control unit.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, fig. 2 and fig. 3, the present invention relates to a silicon wafer laser cutting thermal damage detecting device, which comprises: a wafer stage 300 for placing the silicon wafer 100, a detection position acquisition unit for acquiring the laser cut edge 11 of the silicon wafer 100, and a raman scattering spectrum detection unit 400. Typically, the detection apparatus further has a control unit 600 that controls the operation of the detection position acquisition unit and the raman scattering spectrum detection unit 400.
In the illustrated embodiment, the stage 300 has a carrier 31 for carrying the silicon wafer 100 and a moving rack 33 disposed below the carrier 31, the moving rack 33 has a vertical moving axis 320 for driving the carrier 31 to move up and down and a horizontal moving axis (not shown) for driving the carrier 31 to move along a horizontal direction (i.e. the Y-axis direction shown in the figure) perpendicular to the length direction of the laser-cut edge 11 of the silicon wafer 100, and the operation of the stage 300 can also be controlled by the control unit 600. It is understood that in other embodiments of the present invention, the support of the silicon chip 100 may be realized by a plurality of pillars, instead of the carrier plate 31.
In a specific implementation process, the detection position acquiring unit is a vision camera 500 disposed on the upper side of the slide holder 300. Specifically, the laser cut edge 11 of the silicon wafer 100 is acquired by the vision camera 500. The detection of a specific location by the raman scattering spectroscopy detection unit 400 can be achieved.
Referring to fig. 2 and 3, the raman scattering spectrum detection unit of the present invention has a laser source 41 for providing raman scattering spectrum to detect incident light, an objective lens 42 located above the stage 300, an optical path for transmitting raman scattered light in cooperation with the objective lens 42, and a detector 46 for realizing raman scattered light detection.
More specifically, in the embodiment of the present invention shown in fig. 2, the optical path for transmitting the raman scattered light is constituted by the optical filter 42, the parabolic mirror 44, and the monochromator 45 in cooperation with the objective lens 42. As shown in fig. 3, the filter 42 also has a function of reflecting incident light, and the incident light emitted from the laser light source 41 is reflected by the filter 42 to the objective lens 43; and then is focused on the surface of the silicon chip 100 through the objective lens 43; light re-reflected from the surface of the silicon wafer 100 and reaching the optical filter 42 through the objective lens 43 includes rayleigh scattered light and raman scattered light; the filter 42 is capable of filtering out the rayleigh scattered light and passing the raman scattered light to the parabolic mirror 44; the raman scattered light is then transmitted by the monochromator 45 to the detector 46 for detection.
In the present invention, the wavelength of the laser emitted by the laser source 41 is generally 450-850nm, specifically, for example: 488 +/-2 nm, 514 +/-2 nm, 532 +/-2 nm, 633 +/-2 nm, 785 +/-2 nm and 830 +/-2 nm. Preferably, the wavelength of the laser emitted by the laser source 41 is 450 + -650nm, such as 488 + -2 nm, 514 + -2 nm, 532 + -2 nm and 633 + -2 nm. The laser with relatively small wavelength band has weaker penetrability, mainly acts on the surface of the silicon wafer 100, and can better reflect the surface state of the silicon wafer 100.
In addition, in the implementation process, the magnification of the objective 43 is 2 to 150 times, preferably 10 to 50 times; the filter 6 is typically a long-wavelength pass filter with a wavelength difference of 5cm from the laser light emitted from the laser light source 41-1-500cm-1Preferably 40cm-1-500cm-1. The resolution of the monochromator 45 for reading data is 0.3-10cm-1Per pixel, preferably 0.5-3cm-1A pixel point.
It can be understood that the utility model discloses the theoretical foundation of above silicon chip laser cutting heat damage detection device design lies in: normal silicon not heat-treated by laser at room temperature at 520cm-1There is a strong raman signal, and for the heat-treated silicon after laser cutting, the raman peak center position shifts to a low wave number, the peak width becomes large, and the larger these two shift values, the larger the influence of heat by the laser at the detected position. Based on this, the raman scattered light signal of the surface of the silicon wafer 100 can be used to characterize the degree of influence of the laser cutting on the heat affected zone 10 of the laser cutting edge 11 side of the silicon wafer 100.
Based on the utility model provides a silicon chip laser cutting heat damage detection device can provide one kind and be different from prior art to the heat affected zone detection mode of silicon chip 100 laser cutting edge 11 one side, can more accurately acquire laser cutting to silicon chip 100's influence through this mode, accords with the industry sector to the increasingly high quality demands of photovoltaic product. The detection method of the device for detecting the laser cutting thermal damage of the silicon wafer is described later.
As a preferred embodiment of the present invention, as shown in fig. 1, fig. 2 and fig. 3, the detecting device further includes a conveying unit having a conveyor belt 200 for conveying the silicon wafer 100 to the stage 300, and the carrier plate 31 has an initial state and a jacking state. Referring to fig. 2, when carrier plate 31 is in an initial state, its top surface is lower than the upper surface of conveyor belt 200; when the carrier plate 31 is in the lifted state, the top surface thereof is higher than the upper surface of the conveyor belt 200. As can be easily understood, the carrier plate 31 has an abdicating space (not shown) for evading the conveyor belt 200 when ascending or descending, and based on the abdicating space, the carrier plate 31 is prevented from interfering with the conveyor belt 200 during the up-and-down movement.
In the implementation, the transfer unit has a sensor (not shown) for sensing the silicon wafer 100 entering above the carrier plate 31 and controlling the carrier plate 31 to lift the silicon wafer. In specific implementation, the sensor feeds back the signal to the control unit 600, and then the control unit 600 raises the vertical moving shaft 320 to complete the jacking action of the carrier plate 31. Further, the silicon wafer laser cutting thermal damage detecting apparatus also has a position adjusting mechanism (not shown) cooperating with the conveyor belt 200 to make the laser cutting edge 11 of the silicon wafer 100 perpendicular or parallel to the conveying direction of the conveyor belt 200.
In the present invention, the movable frame 32 further has a longitudinal moving shaft (not shown) for driving the carrier plate to move along the length direction (i.e., the X-axis direction shown in the figure) of the laser-cut edge 11 of the silicon wafer 100. Based on the arrangement, the detection of Raman scattered light signals of the silicon wafer 100 at different positions in the length direction of the laser cutting edge 11 can be realized.
In addition, in some preferred embodiments of the present invention, the detecting device further has an imaging unit cooperating with the objective lens 43 to display the surface topography of the silicon wafer 100. Based on the amplification processing of the objective lens 43 in the raman scattering spectrum detection unit, the image acquired by the imaging unit can clearly show the appearance of the detected position, and the appearance detection of the silicon wafer 100 can be realized without additionally purchasing a whole set of microscope system.
It can be understood that the present invention relates to a detection device further having a display unit connected to the control unit 600, through which the detection result can be shown to the user.
For better understanding the utility model provides a silicon chip laser cutting heat damage detection device, the utility model discloses following still provides a silicon chip laser cutting heat damage detection method, it includes:
step S1, controlling the vertical moving shaft 320 of the moving frame 32 to move, so that the carrier plate 31 connected above the moving frame 32 and having the silicon wafer 100 placed thereon moves in a vertical direction, as shown in fig. 2 and 3. In the specific implementation process, the carrier plate 31 lifts the silicon wafer 100 to move upwards, the carrier plate 31 starts to move at a low speed and a low precision, and when the silicon wafer 100 is lifted to a position near the detection height of the raman scattering spectrum detection unit, the carrier plate performs low speed and high precision movement, and the precision of the vertical moving shaft 320 in the Z-axis direction can be better than 1 μm.
Step S2, in the process of moving the carrier plate 31 up and down, the raman scattering spectrum detection unit collects raman scattering optical signals generated from the surface of the silicon wafer 100, obtains the height position of the carrier plate 31 when the raman scattering optical signals are strongest, and locks the carrier plate 31 to the height position. The Raman scattering spectrum detection unit can have an optimal detection signal through the step.
Step S3, the vision camera 500 obtains the position of the laser cut edge 11 of the silicon wafer 100, and controls the operation of the transverse moving axis of the moving frame 32 with a point on the laser cut edge 11 of the silicon wafer 100 as a test origin, so as to continuously perform the raman scattered light signal test on one side of the silicon wafer 100 along the horizontal direction (i.e. the Y-axis direction shown in the figure) perpendicular to the length direction of the laser cut edge 11 of the silicon wafer 100, and determine the laser cutting thermal damage degree of the silicon wafer 100 according to the test result.
Referring to fig. 4 and 5, the silicon wafer 100 has a heat affected zone 10 corresponding to the laser cut edge 11 on the side of the laser cut edge 11, and one continuous test of the raman scattering spectrum detection unit is performed in the width direction of the heat affected zone 10, and one continuous test corresponds to one test path 10 a. As shown in fig. 4, the intersection position of the test path 10a and the laser-cut edge 11 of the silicon wafer 100 corresponds to the origin of the continuous test.
In this embodiment, the relative movement between the objective lens 43 and the silicon wafer 100 in the Y-axis direction is realized by controlling the operation of the transverse moving axis of the moving frame 32, rather than realizing the corresponding action by the movement of the objective lens 43, so that the influence of the relative movement in the detection process on the optical path in the raman scattering spectrum detection unit can be reduced to the greatest extent.
Further, the utility model relates to a raman scattering spectrum detecting element internal storage has the reference raman spectrum who does not influence the silicon chip by laser cutting, judges that 100 laser cutting heat damage degrees of silicon chip specifically include: comparing the Raman spectrum of the test result with the reference Raman spectrum, comparing the central position deviation value and/or the peak width deviation value of the Raman peak of the test result with the reference Raman spectrum, and acquiring the distribution width of the test points of which the central position deviation value exceeds a first preset threshold value and/or the peak width deviation value exceeds a second preset threshold value; and when the distribution width is larger than the preset width, judging that the laser cutting thermal damage of the silicon wafer 100 is too large.
Referring to fig. 6, a schematic diagram of a raman scattering spectrum at a single point position in the heat affected zone 10 compared with a reference raman spectrum is shown. As shown in the figure, normal silicon that was not laser-heat-treated had a strong raman signal at the c2 position at room temperature, and the peak width was w 2; for heat-treated silicon after thermal damage by laser, it has a strong raman signal at the c1 position and a peak width of w 1. That is, the central position of the raman peak shifts to a low wave number due to the thermal influence of laser dicing, and the peak width also increases. Specifically, in this example, the central position shift value of the raman peak is c2 to c1, and the peak width shift value of the raman peak is w1 to w 2. It is understood that the absolute value of the difference of the corresponding parameters is used as the offset value in the present invention.
In the present invention, c2-c1 may exceed the first predetermined threshold value and w1-w2 may exceed the second predetermined threshold value within a certain distance from the laser-cut edge 11 of the silicon wafer 100. The utility model discloses an above concrete implementation mode aim at of "judging silicon chip 100 laser cutting heat damage degree" define one and judge whether silicon chip 100 laser cutting heat damage is at the concrete standard of control range. One of the central position offset value and the peak width offset value of the raman peak may be selected as the reference standard, or both may be selected as the reference standards.
In one embodiment, the first predetermined threshold is selected within a range of 1cm-1-2cm-1The second preset threshold is selected within the range of 2cm-1-5cm-1The selection range of the preset width is 3-6 μm. As a concrete example, the first preset threshold is 2cm-1The second preset threshold is 5cm-1The selected range of the preset width is 5 μm.
Referring to fig. 7, it is shown a schematic diagram of the central position deviation value of the raman peak in a single continuous detection result according to the detection position, during which the central position deviation value of the raman peak exceeds 2cm-1The test sites of (2) are distributed over a range of about 30 μm, which is far beyond the preset width by 5 μm. Based on this, it can be determined that the laser cutting thermal damage of the corresponding silicon wafer 100 is too large, and further adjustment and optimization can be performed on the laser cutting process of the silicon wafer 100 on the basis.
Correspondingly, can understand, the utility model discloses in also can obtain the peak width deviant of raman peak in the continuous probing result of single along with the change schematic diagram (not show in the picture) of surveying the position through the testing result, and then judge whether too big according to this to judge silicon chip 100 laser cutting heat damage.
In the present invention, it is preferable that step S1 is preceded by step S0: the silicon wafer 100 is transferred above the carrier plate 31 by the transfer belt 200.
Further, step S0 includes sensing, by a sensor, that the silicon wafer 100 on the conveyor belt 200 is moved above the carrier plate 31. In a specific implementation process, when the sensor senses that the silicon wafer 100 on the conveyor belt 200 enters above the carrier plate 31, the control unit 600 controls the vertical moving shaft 320 of the moving frame 32 to move upward, so that the carrier plate 31 jacks up the silicon wafer 100 on the conveyor belt 200, and then the silicon wafer enters a detection range of the scattering spectrum detection unit.
As a further aspect of the present invention, the detection method further includes step S4: the test results of the silicon wafer 100 at different positions on the laser cut edge 11 side are obtained by controlling the longitudinal moving axis of the moving frame 300 to move the carrier plate 31 a distance along the length direction of the laser cut edge 11 of the silicon wafer 100 (i.e. corresponding to the X-axis direction shown in the figure), and repeating step S3.
Referring to fig. 4, by controlling the longitudinal movement axis of the movable frame 300 to move, the detection can be performed at different positions on the heat affected zone 10 of the silicon wafer 100 according to the detection path 10a, and then a plurality of groups of test results at different positions can be obtained, so as to more accurately obtain the laser influence degree of the laser cutting edge 11 side of the corresponding silicon wafer 100.
The above list of details is only for the practical implementation of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent implementations or modifications that do not depart from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (9)
1. A silicon wafer laser cutting thermal damage detection device is characterized by comprising: the device comprises a wafer carrying table for placing a silicon wafer, a detection position acquisition unit for acquiring a laser cutting edge of the silicon wafer and a Raman scattering spectrum detection unit; the Raman scattering spectrum detection unit is provided with a laser light source for providing Raman scattering spectrum to detect incident light, an objective lens positioned above the slide holder, a light path matched with the objective lens for transmitting Raman scattering light, and a detector for realizing Raman scattering light detection.
2. The apparatus for detecting the laser cutting thermal damage of the silicon wafer as claimed in claim 1, wherein the wafer stage has a support plate for supporting the silicon wafer and a moving frame disposed below the support plate, the moving frame having a vertical moving shaft for driving the support plate to move up and down.
3. The apparatus for detecting laser cutting thermal damage to silicon wafers as claimed in claim 2, further comprising a transfer unit having a transfer belt for transferring the silicon wafers to the stage, the carrier plate having an initial state in which a top surface thereof is lower than an upper surface of the transfer belt and a lifted state in which a top surface thereof is higher than the upper surface of the transfer belt.
4. The silicon wafer laser cutting thermal damage detection device as claimed in claim 3, wherein the conveying unit is provided with a sensor for sensing the silicon wafer entering above the carrier plate and controlling the carrier plate to jack up the silicon wafer.
5. The silicon wafer laser cutting heat damage detection device as claimed in any one of claims 2-4, wherein the moving frame further has a transverse moving axis for driving the carrier plate to move along a horizontal direction perpendicular to the length direction of the laser cutting edge of the silicon wafer.
6. The silicon wafer laser cutting heat damage detection device as claimed in any one of claims 2-4, wherein the movable frame further has a longitudinal movement axis for driving the carrier plate to move along the length direction of the laser cut edge of the silicon wafer.
7. The silicon wafer laser cutting thermal damage detection device as claimed in any one of claims 1-4, wherein the detection device further comprises an imaging unit cooperating with the objective lens to display the surface topography of the silicon wafer.
8. The silicon wafer laser cutting thermal damage detection device as claimed in any one of claims 1 to 4, wherein the detection position acquisition unit is a visual camera disposed on the upper side of the stage.
9. The silicon wafer laser cutting thermal damage detection device as claimed in any one of claims 1 to 4, wherein the detection device further comprises a control unit for controlling the operation of the detection position acquisition unit and the Raman scattering spectrum detection unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120150420.3U CN214201194U (en) | 2021-01-19 | 2021-01-19 | Silicon wafer laser cutting heat damage detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120150420.3U CN214201194U (en) | 2021-01-19 | 2021-01-19 | Silicon wafer laser cutting heat damage detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214201194U true CN214201194U (en) | 2021-09-14 |
Family
ID=77636909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120150420.3U Active CN214201194U (en) | 2021-01-19 | 2021-01-19 | Silicon wafer laser cutting heat damage detection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214201194U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210407832A1 (en) * | 2020-06-29 | 2021-12-30 | Taiwan Semiconductor Manufacturing Company Limited | Detecting damaged semiconductor wafers utilizing a semiconductor wafer sorter tool of an automated materials handling system |
-
2021
- 2021-01-19 CN CN202120150420.3U patent/CN214201194U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210407832A1 (en) * | 2020-06-29 | 2021-12-30 | Taiwan Semiconductor Manufacturing Company Limited | Detecting damaged semiconductor wafers utilizing a semiconductor wafer sorter tool of an automated materials handling system |
| US11600504B2 (en) * | 2020-06-29 | 2023-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Detecting damaged semiconductor wafers utilizing a semiconductor wafer sorter tool of an automated materials handling system |
| US20230207357A1 (en) * | 2020-06-29 | 2023-06-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Detecting damaged semiconductor wafers utilizing a semiconductor wafer sorter tool of an automated materials handling system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9546955B2 (en) | Wafer imaging and processing method and apparatus | |
| US20090297017A1 (en) | High resolution multimodal imaging for non-destructive evaluation of polysilicon solar cells | |
| US7446868B1 (en) | Micro defects in semi-conductors | |
| CN214201194U (en) | Silicon wafer laser cutting heat damage detection device | |
| CN1890558A (en) | Semiconductor array tester | |
| Moralejo et al. | LBIC and reflectance mapping of multicrystalline Si solar cells | |
| CN103003664A (en) | Real-time temperature, optical band gap, film thickness, and surface roughness measurement for thin films applied to transparent substrates | |
| CN101408572A (en) | Substrate optical detection method and apparatus | |
| CN111880072A (en) | Method for characterizing 4H-SiC electrical properties by Raman spectrum based on photon-generated carrier effect | |
| CN101705477B (en) | System and method for detecting and repairing crystallization rate of film product on line | |
| CN114695226A (en) | Full-automatic wafer back laser marking device and method | |
| Acciarri et al. | Fast LBIC in-line characterization for process quality control in the photovoltaic industry | |
| CN114813693A (en) | Silicon wafer laser cutting thermal damage detection device and detection method | |
| Martin et al. | A versatile computer‐controlled high‐resolution LBIC system | |
| CN101458293B (en) | Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector | |
| CN109075092A (en) | detection device and detection method | |
| CN116149037A (en) | Ultrafast large-size scanning system and method | |
| CN210890646U (en) | Camera module and battery silicon chip defect detection device | |
| CN101377533A (en) | Method for detecting mercury cadmium telluride photovoltaic detector deep energy level defect | |
| Sopori et al. | High-speed mapping of grown-in defects and their influence in large-area silicon photovoltaic devices | |
| CN221260830U (en) | Visual inspection system | |
| Carr et al. | Characterization of silicon solar cells and substrates with the PVScan 5000 | |
| KR101149766B1 (en) | Device and method for machining multi-layer substrate performing isolation process and edge deletion process | |
| Carr et al. | Applications of Scanning Defect Mapping System for Semiconductor Characterization | |
| CN113922757A (en) | Wide-spectrum light beam induced current imaging device and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 314000 buildings 1 and 2, No. 325, Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province Patentee after: Jiaxing atlas Technology Research Institute Co.,Ltd. Address before: Room 1505-8, building 1, Jiaxing photovoltaic technology innovation park, 1288 Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province, 314000 Patentee before: Jiaxing atlas Photovoltaic Technology Co., Ltd |
|
| CP03 | Change of name, title or address |