CN214193522U - Indium phosphide polycrystal synthesizer - Google Patents
Indium phosphide polycrystal synthesizer Download PDFInfo
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- CN214193522U CN214193522U CN202022517522.2U CN202022517522U CN214193522U CN 214193522 U CN214193522 U CN 214193522U CN 202022517522 U CN202022517522 U CN 202022517522U CN 214193522 U CN214193522 U CN 214193522U
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Abstract
The utility model belongs to the technical field of the semiconductor preparation, a indium phosphide polycrystal synthesizer is disclosed, including quartzy hearth pipe, quartzy hearth pipe both ends are equipped with high temperature heater and low temperature heating ware, quartzy hearth pipe is equipped with the heater and separates the temperature cotton and lie in between high temperature heating ware and the low temperature heating ware, placed quartzy ampoule in the quartzy hearth pipe, the both ends of quartzy ampoule all are equipped with big bottleneck district, the middle part is equipped with little bottleneck district, two big bottleneck districts are equipped with the red phosphorus district of placing high-purity red phosphorus respectively and place the high-purity indium district of high-purity indium, the one end that little bottleneck district was kept away from in the high-purity indium district of quartzy ampoule is the open end and is equipped with the quartz cap, it separates the temperature cotton to be equipped with quartzy ampoule between the little bottleneck district of quartzy ampoule and the quartzy hearth pipe. The utility model discloses can solve because of not having suitable heat preservation measure between high temperature district and the middle temperature district, lead to the red phosphorus partial condensation after the evaporation to be difficult to obtain the problem of the even polycrystal material of ratio.
Description
Technical Field
The utility model belongs to the technical field of semiconductor preparation, especially, relate to an indium phosphide polycrystal synthesizer.
Background
Indium phosphide (InP) is an important compound semiconductor material, and a horizontal bridgman method is generally used to synthesize an indium phosphide polycrystal. During synthesis, red phosphorus and high-purity indium are required to be respectively placed in a high-temperature area and a low-temperature area, the red phosphorus is changed into red phosphorus vacuum by controlling humidity, and then the red phosphorus vacuum and the high-purity indium are fused together to synthesize the polycrystalline material.
Due to heat radiation and other reasons, the temperatures at the two sides need to be strictly controlled, the humidity of the high-temperature area can affect the temperature of the low-temperature area in the control process, when the temperature of the high-temperature area meets the requirement, the temperature of the low-temperature area can be higher than the required value, and due to the fact that no proper heat preservation measures are arranged between the high-temperature area and the medium-temperature area, the evaporated red phosphorus is partially condensed, and therefore polycrystalline materials with uniform proportion are difficult to obtain.
SUMMERY OF THE UTILITY MODEL
In view of this, the present invention provides an indium phosphide polycrystal synthesizer, which solves the problem that it is difficult to obtain polycrystal materials with uniform ratio due to partial condensation of evaporated red phosphorus caused by no proper heat preservation measure between the high temperature zone and the medium temperature zone.
The utility model discloses an above-mentioned technical problem is solved to following technical means: the utility model provides an indium phosphide polycrystal synthesizer, includes quartz hearth pipe, quartz hearth pipe one end is equipped with high temperature heating ware, the quartz hearth pipe other end is equipped with low temperature heating ware, quartz ampoule has been placed in the quartz hearth pipe, quartz ampoule's both ends are big bottleneck district, and the middle part is little bottleneck district, two big bottleneck district is equipped with the red phosphorus district of placing high-purity red phosphorus and the high-purity indium district of placing high-purity indium respectively, red phosphorus district is located low temperature heating ware one end, high-purity indium district is located high temperature heating ware one end, the one end that little bottleneck district was kept away from in quartz ampoule's high-purity indium district is the open end and is equipped with the quartz cap, be equipped with quartz ampoule heat-insulating cotton between quartz hearth pipe and the little bottleneck district of quartz ampoule.
Furthermore, the quartz hearth tube between the high-temperature heater and the low-temperature heater is provided with heater heat insulation cotton, the quartz ampoule bottle heat insulation cotton arranged between the small bottleneck region and the quartz hearth tube plays a primary heat insulation effect, and the heater heat insulation cotton arranged on the quartz hearth tube again plays a further heat insulation effect on the quartz ampoule bottle.
Further, alumina powder is filled between the quartz hearth pipe and the high-temperature heater and between the quartz hearth pipe and the low-temperature heater, the quartz hearth pipe is not directly contacted with the high-temperature heater and the low-temperature heater, and the filled alumina powder avoids deformation and cracking of the quartz hearth pipe during heating.
Further, the quartz boat for storing high-purity indium is placed in the high-purity indium area of the quartz ampoule bottle, an L-shaped opening for placing and taking the high-purity indium is formed in one end, close to the high-purity red phosphorus, of the quartz boat, the quartz boat is arranged to prevent the high-purity indium and the high-purity red phosphorus from being contacted and mixed before heating, the L-shaped opening is located on one side, close to the high-purity red phosphorus, close to gas evaporated by the high-purity red phosphorus, and therefore reaction of the high-purity indium and the high-purity red phosphorus can be accelerated.
Furthermore, a quartz plug is arranged in the small bottle neck region of the quartz ampoule bottle and close to the high-purity indium region, the quartz plug plays a role in blocking air flow, a gap is reserved between the quartz plug and the ampoule bottle, and evaporated high-purity red phosphorus gas can flow into the high-purity indium region through the gap.
Furthermore, the size of the quartz cap is matched with that of the quartz ampoule bottle, namely when the quartz cap is placed into the quartz ampoule bottle, the sealing performance in the quartz ampoule bottle can be ensured, and the oxidation of polycrystalline materials or the leakage of red phosphorus can be avoided.
The utility model has the advantages that: the utility model discloses when adopting the synthetic indium phosphide polycrystal of horizontal Bridgman method, put into quartz ampoule with red phosphorus and place in the low temperature region, put into quartz boat with high-purity indium and place in the quartz ampoule of high temperature region in, and be equipped with the heater between high temperature region and low temperature region and separate the influence that the temperature is cotton and quartz ampoule separates the temperature cotton and reduce cluster temperature between high temperature region and the low temperature region, the problem of high, low temperature region cluster temperature influence yield has been solved, thereby obtain the even polycrystal material of ratio.
Drawings
FIG. 1 is a schematic view showing the structure of an apparatus for synthesizing an indium phosphide polycrystal according to the present invention;
the device comprises a quartz cap 1, a high-temperature heater 2, a quartz hearth tube 3, alumina powder 4, a quartz plug 5, heater heat insulation cotton 6, quartz ampoule heat insulation cotton 7, a quartz ampoule bottle 8, a low-temperature heater 9, a quartz boat 10, high-purity indium 11, high-purity red phosphorus 12, a small bottleneck region 13, a red phosphorus region 14, a high-purity indium region 15 and an L-shaped opening 16.
Detailed Description
The invention will be described in detail with reference to the following drawings and specific embodiments:
as shown in figure 1, an indium phosphide polycrystal synthesis device comprises a quartz hearth tube 3, a high-temperature heater 2 is arranged at the left end of the quartz hearth tube 3, a low-temperature heater 9 is arranged at the right end of the quartz hearth tube 3, heater temperature insulation cotton 6 is arranged on the quartz hearth tube 3 between the high-temperature heater 2 and the low-temperature heater 9, alumina powder 4 is filled between the quartz hearth tube 3 and the high-temperature heater 2 and between the quartz hearth tube 3 and the low-temperature heater 9, a quartz ampoule bottle 8 is arranged in the quartz hearth tube 3, two ends of the quartz ampoule bottle 8 are large bottleneck areas, the middle part is a small bottleneck area 13, the large bottleneck area at the left end is a high-purity indium area 15 for placing high-purity indium 11, a quartz boat 10 for storing high-purity indium 11 is arranged in the high-purity indium area 15 of the quartz ampoule bottle 8, an L-shaped opening 16 for placing the high-purity indium 11 is arranged at one end of the quartz boat 10 close to high-purity red phosphorus 12, the large bottleneck area at the right end is a red phosphorus area 14 for placing high-purity red phosphorus 12, the left end of the quartz ampoule bottle 8 is an open end and is provided with a quartz cap 1, the size of the quartz cap 1 is matched with that of the quartz ampoule bottle 8, namely, the quartz cap 1 can ensure the sealing property in the quartz ampoule bottle 8 when being placed into the quartz ampoule bottle 8, quartz ampoule bottle heat insulation cotton 7 is arranged between the small bottleneck area 13 of the quartz ampoule bottle 8 and the quartz hearth tube 3, a quartz plug 5 is arranged in the small bottleneck area 13 of the quartz ampoule bottle 8 and close to the high-purity indium area 15, a gap is reserved between the quartz plug 5 and the quartz ampoule bottle 8, and the quartz plug 5 plays a role in blocking air flow.
The utility model discloses a use method as follows:
when the quartz hearth tube is used, the quartz hearth tube 3 penetrates through and is placed between the low-temperature heater 9 and the high-temperature heater 2, alumina powder 4 is filled between the quartz hearth tube 3 and the high-temperature heater 2 as well as between the quartz hearth tube 3 and the low-temperature heater 9, deformation and burst caused by uneven heating of the quartz hearth tube 3 are prevented, and the heater temperature insulation cotton 6 is arranged between the high-temperature heater 2 and the low-temperature heater 9 and wraps the quartz hearth tube 3; putting high-purity red phosphorus 12 into a red phosphorus area 14 in a quartz ampoule bottle 8, putting a quartz plug 5 into a small bottleneck area 13, wrapping the quartz ampoule bottle heat insulation cotton 7 in the small bottleneck area 13, horizontally putting the quartz ampoule bottle in a quartz hearth tube 3, enabling the small bottleneck area 13 of the quartz ampoule bottle 8 to be positioned between a high-temperature heater 2 and a low-temperature heater 9, enabling the heater heat insulation cotton 6 and the quartz ampoule bottle heat insulation cotton 7 to achieve a double heat insulation effect, putting high-purity indium 11 into a quartz boat 10, horizontally putting the quartz boat 10, pushing the quartz boat 10 from an L-shaped opening 16 end of the quartz boat 10 to the quartz ampoule bottle 8, finally putting the quartz boat 1 into the quartz ampoule bottle 8, and finally putting the quartz cap 1 into the quartz ampoule bottle 8 until the quartz cap 1 completely enters the quartz ampoule bottle 8 to cover the quartz ampoule bottle 8. After the polycrystalline material is grown, the high-temperature heater 2 and the low-temperature heater 9 are started to achieve the double heat insulation effect due to the heater heat insulation cotton 6 and the quartz ampoule bottle heat insulation cotton 7, so that the influence of the series temperature between the high-temperature area and the low-temperature area is reduced, the problem that the series temperature of the high-temperature area and the low-temperature area influences the yield is solved, and the polycrystalline material with uniform proportion is obtained.
Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will understand that the present invention can be modified or replaced with other embodiments without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims. The technology, shape and construction parts which are not described in detail in the present invention are all known technology.
Claims (6)
1. The utility model provides an indium phosphide polycrystal synthesizer, includes quartz hearth pipe, its characterized in that: the quartz ampoule furnace comprises a quartz furnace tube, a quartz ampoule bottle, a quartz furnace tube, a high-temperature heater, a low-temperature heater, a quartz ampoule bottle, a large bottleneck region and a small bottleneck region, wherein the two ends of the quartz ampoule bottle are large bottleneck regions, the middle of the quartz furnace tube is a small bottleneck region, the large bottleneck regions are respectively provided with a red phosphorus region for placing high-purity red phosphorus and a high-purity indium region for placing high-purity indium, the red phosphorus region is positioned at one end of the low-temperature heater, the high-purity indium region is positioned at one end of the high-temperature heater, one end, far away from the small bottleneck region, of the high-purity indium region of the quartz ampoule bottle is an open end and is provided with a quartz cap, and quartz ampoule bottle heat insulation cotton is arranged between the small bottleneck region of the quartz ampoule bottle and the quartz furnace tube.
2. The apparatus according to claim 1, wherein: and heater heat insulation cotton is arranged on the quartz bore tube between the high-temperature heater and the low-temperature heater.
3. The apparatus according to claim 2, wherein: alumina powder is filled between the quartz hearth tube and the high-temperature heater and between the quartz hearth tube and the low-temperature heater.
4. The apparatus according to claim 3, wherein: a quartz boat for storing high-purity indium is placed in a high-purity indium area of the quartz ampoule bottle, and an L-shaped opening for placing and taking the high-purity indium is formed in one end, close to the high-purity red phosphorus, of the quartz boat.
5. The apparatus according to claim 4, wherein: a quartz plug is arranged in the small bottle neck region of the quartz ampoule bottle and close to the high-purity indium region, and a gap is reserved between the quartz plug and the ampoule bottle.
6. The apparatus according to claim 5, wherein: the size of the quartz cap is matched with that of the quartz ampoule bottle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022517522.2U CN214193522U (en) | 2020-11-04 | 2020-11-04 | Indium phosphide polycrystal synthesizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022517522.2U CN214193522U (en) | 2020-11-04 | 2020-11-04 | Indium phosphide polycrystal synthesizer |
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| Publication Number | Publication Date |
|---|---|
| CN214193522U true CN214193522U (en) | 2021-09-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202022517522.2U Active CN214193522U (en) | 2020-11-04 | 2020-11-04 | Indium phosphide polycrystal synthesizer |
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| CN (1) | CN214193522U (en) |
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2020
- 2020-11-04 CN CN202022517522.2U patent/CN214193522U/en active Active
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