CN214154651U - Image sensor and imaging device - Google Patents
Image sensor and imaging device Download PDFInfo
- Publication number
- CN214154651U CN214154651U CN202120373629.6U CN202120373629U CN214154651U CN 214154651 U CN214154651 U CN 214154651U CN 202120373629 U CN202120373629 U CN 202120373629U CN 214154651 U CN214154651 U CN 214154651U
- Authority
- CN
- China
- Prior art keywords
- layer
- photoelectric conversion
- fluorescent
- image sensor
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This scheme discloses an image sensor and imaging device, wherein image sensor includes: the photoelectric conversion layer can be formed by taking a substrate as a base and can be formed by taking a metal circuit layer as a base. The fluorescent layer is positioned on one side of the photoelectric conversion layer, which is far away from the substrate or the metal circuit layer. In the fluorescent layer, a fluorescent reflection increasing layer corresponding to the fluorescent wavelength is added above the fluorescent layer, so that the upward emitted fluorescent light is reflected to the photoelectric conversion unit, the situation that the fluorescent light which is not emitted to the photoelectric conversion layer is lost is avoided, the stronger the fluorescent light received by the photoelectric conversion layer is, the stronger the charge signal generated by the photoelectric conversion layer is, the clearer the ultraviolet image signal generated by the photoelectric conversion layer is, and the ultraviolet imaging quality is further ensured. The fluorescent anti-reflection layer is added between the fluorescent layer and the photoelectric conversion layer, so that the reflection of fluorescent light on a material attached to the photoelectric conversion layer can be reduced, and the fluorescent loss caused by the larger reflectivity of the attached material can be reduced.
Description
Technical Field
This scheme relates to optics technical field, especially relates to an image sensor and image device.
Background
At present, ultraviolet imaging equipment mainly images by collecting ultraviolet light reflected by an object, and then information which cannot be seen by naked eyes can be presented.
When ultraviolet light irradiates a fluorescent layer of the ultraviolet imaging device, electrons of the fluorescent material in the fluorescent layer absorb energy of ultraviolet photons, and the ultraviolet photons are transited from a valence band to a conduction band. When an electron transitions from the conduction band back to the valence band, energy is released as fluorescence.
Because fluorescence belongs to spontaneous emission, light rays are isotropic, namely all the light rays exist in all directions, and therefore fluorescence which does not irradiate to the photoelectric conversion unit is lost, so that the ultraviolet light imaging quality is poor, images are blurred or blurred, and the visual experience is poor.
SUMMERY OF THE UTILITY MODEL
The scheme provides an image sensor and an imaging device, and aims to solve the problem that after ultraviolet light irradiates a fluorescent layer of ultraviolet imaging equipment, spontaneous radiation of the fluorescent light in all directions causes single fluorescent loss of photoelectric conversion of the emitted fluorescent light, so that the imaging of the ultraviolet light is poor.
In order to solve the above technical problem, the embodiment of the present invention mainly provides the following technical solutions:
in one aspect, an embodiment of the present disclosure provides an image sensor, including:
a substrate;
a photoelectric conversion layer on one side of the substrate;
the fluorescent layer is positioned on one side of the photoelectric conversion layer, which is far away from the substrate;
the fluorescent reflection increasing layer is positioned on one side of the fluorescent layer, which is far away from the photoelectric conversion layer;
and the band-pass filter layer is positioned on one side of the fluorescence reflection increasing layer far away from the fluorescent layer.
In a preferred embodiment, the image sensor further comprises:
and the metal circuit layer is positioned on one side of the substrate, which is far away from the photoelectric conversion layer.
In another aspect, an embodiment of the present disclosure provides an image sensor, including:
a metal wiring layer;
a photoelectric conversion layer on one side of the metal wiring layer;
the fluorescent layer is positioned on one side of the photoelectric conversion layer, which is far away from the metal circuit layer;
the fluorescent reflection increasing layer is positioned on one side of the fluorescent layer, which is far away from the photoelectric conversion layer;
and the band-pass filter layer is positioned on one side of the fluorescence reflection increasing layer far away from the fluorescent layer.
In a preferred embodiment, the bandpass filter layer comprises an ultraviolet filter layer and/or a visible light filter layer.
In a preferred embodiment, the image sensor further comprises: and the fluorescent anti-reflection layer is arranged on one side of the fluorescent layer close to the photoelectric conversion layer.
In a preferred embodiment, the phosphor layer is made of a coronene material or a road-code material; and/or the presence of a gas in the gas,
the fluorescence reflection increasing layer material is hafnium oxide or tantalum pentoxide.
In a preferred embodiment, the thickness of the fluorescence reflection increasing layer corresponds to the wavelength at which the fluorescent layer fluoresces.
In a preferred embodiment, the image sensor further comprises:
and the micro lens is positioned between the photoelectric conversion layer and the fluorescent layer or positioned on one side of the band-pass filter layer, which is far away from the fluorescent reflection increasing layer.
In a preferred embodiment, the photoelectric conversion layer is provided with a spacer layer that separates the photoelectric conversion layer in the direction in which the fluorescent layer extends.
In another aspect, an embodiment of the present disclosure provides an imaging apparatus, including:
the image sensor described above;
and an image processing unit which generates a corresponding image based on the image signal output by the image sensor.
The scheme has the following beneficial effects:
according to the image sensor and the imaging device provided by the embodiment of the invention, the photoelectric conversion layer can be formed by forming a groove on the substrate by photoetching and then forming the photoelectric conversion layer in the groove; alternatively, the photoelectric conversion layer may be formed on the metal wiring layer by using a mask process, a photolithography process, and a deposition process, and the photoelectric conversion layer may be formed on the metal wiring layer by using the metal wiring layer as a substrate. The fluorescent layer is positioned on one side of the photoelectric conversion layer, which is far away from the substrate or the metal circuit layer. The fluorescence reflection increasing layer corresponding to the fluorescence wavelength is added above the fluorescent layer, so that the upward emitted fluorescence is reflected to the photoelectric conversion layer, the situation that the fluorescence which is not emitted to the photoelectric conversion layer is lost is avoided, the stronger the fluorescence received by the photoelectric conversion layer is, the stronger the charge signal generated by the photoelectric conversion layer is, the clearer the corresponding optical image signal generated by the photoelectric conversion layer is, and the imaging quality is further ensured.
According to the scheme, the fluorescent anti-reflection layer is additionally arranged between the fluorescent layer and the photoelectric conversion layer, so that the reflection of fluorescence on a material attached to the photoelectric conversion layer can be reduced, and the fluorescence loss caused by the fact that the reflectivity of the attached material is larger can be reduced.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the embodiments of the present invention more clear and clear, and to be implemented according to the content of the description, the following detailed description is made with reference to the accompanying drawings and preferred embodiments of the present invention.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 shows a cross-sectional view of an embodiment of an image sensor according to the present solution;
fig. 2 shows a cross-sectional view of another embodiment of the image sensor according to the present solution;
fig. 3 shows a cross-sectional view of another embodiment of the image sensor according to the present solution;
fig. 4 shows a cross-sectional view of another embodiment of the image sensor according to the present solution;
fig. 5 shows a cross-sectional view of another embodiment of the image sensor according to the present solution;
fig. 6 shows a cross-sectional view of another embodiment of the image sensor according to the present solution;
fig. 7 shows a cross-sectional view of another embodiment of the image sensor according to the present solution;
fig. 8 shows a schematic view of an image forming apparatus according to the present embodiment;
the reference numerals in fig. 1 to 8 include:
01-image sensor, 02-image processing unit, 10-substrate, 20-photoelectric conversion layer, 31-fluorescent layer, 32-fluorescence reflection increasing layer, 33-fluorescence reflection increasing layer, 40-band-pass filter layer, 41-ultraviolet filter layer, 42-visible light filter layer, 50-metal circuit layer, 60-microlens and 70-spacing layer.
Detailed Description
In order to make the technical solutions and advantages clearer, the following will describe embodiments of the present invention in further detail with reference to the accompanying drawings. It is clear that the described embodiments are only a part of the embodiments of the present application, and not an exhaustive list of all embodiments. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which this application belongs.
Through analysis and research on the prior art, after ultraviolet light irradiates a fluorescent layer of an ultraviolet imaging device, electrons of the fluorescent material in the fluorescent layer absorb energy of ultraviolet photons and are transited from a valence band to a conduction band. When the electron jumps from the conduction band back to the valence band, energy is released as spontaneous emission in the form of fluorescence, which is emitted in all directions, resulting in a loss of fluorescence to the photoelectric conversion unit.
Therefore, the present invention is directed to provide an image sensor and an imaging device, which can prevent the fluorescence not emitted to the photoelectric conversion unit from being lost by adding an antireflection film corresponding to the wavelength of the fluorescence above the fluorescent film to reflect the fluorescence emitted upward to the photoelectric conversion unit.
Hereinafter, an image sensor and an imaging device according to the present invention will be described in detail with reference to the accompanying drawings.
Example one
As shown in fig. 1, the present solution provides an image sensor 01, including: a substrate 10; a photoelectric conversion layer 20 on the substrate 10 side; a fluorescent layer 31 on the side of the photoelectric conversion layer 20 away from the substrate 10; a fluorescence reflection increasing layer 32 on the side of the fluorescent layer 31 away from the photoelectric conversion layer 20, and a band-pass filter layer 40 on the side of the fluorescence reflection increasing layer 32 away from the fluorescent layer 31.
In particular, the substrate 10 may include silicon (e.g., single crystal silicon), silicon germanium (SiGe), gallium arsenide (GaAs), germanium (Ge), silicon-on-insulator (SOI), germanium-on-insulator (GOI), or any other suitable material. The photoelectric conversion layer 20 is formed on the substrate 10 by a semiconductor manufacturing process such as deposition, photolithography, and the like, and then, the fluorescent layer 31 is formed on the photoelectric conversion layer 20, the fluorescence reflection increasing layer 32 is formed on the fluorescent layer 31, and the band-pass filter layer 40 is formed on the fluorescence reflection increasing layer.
More specifically, the fluorescent layer 31 is located on the side of the photoelectric conversion layer 20 far from the substrate 10, the fluorescence reflection increasing layer 32 is located on the side of the fluorescent layer 31 far from the photoelectric conversion layer 20, when ultraviolet light irradiates the fluorescent layer 31, electrons of the fluorescent material in the fluorescent layer 31 absorb energy of ultraviolet photons to jump from a valence band to a conduction band, and since fluorescence is spontaneous emission, light is isotropic, that is, light is always emitted in all directions, for example, in an ultraviolet imaging process, especially when imaging a human face or other skin positions, long-wave ultraviolet light (wavelength range 315nm to 380nm), for example, long-wave ultraviolet light of 365nm, can be generally used; therefore, a semiconductor structure that performs photoelectric conversion, such as the photoelectric conversion layer 20 that can receive the wavelength, can be formed on the substrate 10. Here, the photoelectric conversion layer 20 may be formed on the substrate 10 through a deposition process. The PN junction of the photoelectric conversion layer 20 generates a charge signal under the action of photon excitation, the stronger the fluorescence received by the photoelectric conversion layer 20, the stronger the charge signal generated by the photoelectric conversion layer, and the clearer the corresponding optical image signal generated by the photoelectric conversion layer, thereby ensuring the corresponding optical imaging quality.
In one embodiment, as shown in fig. 2, the image sensor 01 further includes a metal wiring layer 50 on a side of the substrate 10 away from the photoelectric conversion layer 20.
Specifically, on the basis of the embodiment shown in fig. 1, the charge signal generated by the photoelectric conversion layer 20 may be processed by the metal wiring layer 50 on the side of the substrate 10 away from the photoelectric conversion layer 20 to obtain an image signal, which is output to the image processing unit 02 in the imaging device.
Example two
As shown in fig. 3, the present solution provides an image sensor 01, including: a metal wiring layer 50; a photoelectric conversion layer 20 on the metal wiring layer 50 side; the fluorescent layer 31 is positioned on one side of the photoelectric conversion layer 20 far away from the metal circuit layer 50; a fluorescence reflection increasing layer 32 on the side of the fluorescent layer 31 away from the photoelectric conversion layer 20, and a band-pass filter layer 40 on the side of the fluorescence reflection increasing layer 32 away from the fluorescent layer.
Specifically, a semiconductor structure that performs photoelectric conversion, such as the photoelectric conversion layer 20 capable of receiving a corresponding light wavelength, may be formed on the metal wiring layer 50. The photoelectric conversion layer 20 may be formed on the metal circuit layer 50 by a deposition process using the metal circuit layer 50 as a substrate. Then, a fluorescent layer 31 is formed on the photoelectric conversion layer 20, a fluorescence reflection increasing layer 32 is formed on the fluorescent layer 31, and a band-pass filter layer 40 is formed on the fluorescence reflection increasing layer 32.
More specifically, the fluorescent layer 31 is located on the side of the photoelectric conversion layer 20 far from the metal wiring layer 50, the fluorescence reflection increasing layer 32 is located on the side of the fluorescent layer 31 far from the photoelectric conversion layer 20, when light is irradiated to the fluorescent layer 31, electrons of the fluorescent layer 31 absorb energy of ultraviolet photons and transit from a valence band to a conduction band, since fluorescence is spontaneous emission, light is isotropic, i.e., existing in all directions, and by adding the reflection increasing layer corresponding to the wavelength of fluorescence above the fluorescent layer 31, the fluorescence emitted upward is reflected to the photoelectric conversion layer, thereby avoiding the situation that fluorescence not directed to the photoelectric conversion layer is lost, for example, in the ultraviolet imaging process, especially in the imaging of human face or other skin positions, long-wavelength ultraviolet rays (wavelength range of 315nm to 380nm) can be generally used, for example, 365nm long wave ultraviolet light; with the metal wiring layer 50 as a substrate, a semiconductor structure that can receive the photoelectric conversion layer 20 and the like of the above-described wavelength and perform photoelectric conversion is formed on the metal wiring layer 50 by using a mask process, a photolithography process, and a deposition process. The PN junction of the photoelectric conversion layer 20 generates a charge signal under the action of photon excitation, and the stronger the fluorescence received by the photoelectric conversion layer 20, the stronger the charge signal generated by the photoelectric conversion layer, the clearer the corresponding image signal generated by the photoelectric conversion layer, thereby ensuring the imaging quality.
Based on the above two embodiments, as shown in FIGS. 1 to 7
In one embodiment, as shown in fig. 1-7, bandpass filter layer 40 includes an ultraviolet filter layer 41 and/or a visible light filter layer 42.
Specifically, the band-pass filter layer 40 includes an ultraviolet filter layer 41 and/or a visible light filter layer 42, and different filter layers may allow the photoelectric conversion layer 20 to receive only the corresponding type of light, generate a corresponding image signal, and output the image signal to the image processing unit 02 in the imaging device.
In one embodiment, as shown in fig. 4 to 7, the image sensor 01 further includes a fluorescence antireflection layer 33, and the fluorescence antireflection layer 33 is disposed on a side of the fluorescent layer 31 close to the photoelectric conversion layer 20.
Specifically, the fluorescent layer 31 further includes a fluorescent anti-reflection layer 33, and since the fluorescent light is reflected when entering the substrate 10, and the substrate 10 is generally made of a material with a relatively high reflectivity, an anti-reflection layer for the fluorescent wavelength band is further added between the fluorescent layer 31 and the photoelectric conversion layer 20 to reduce the loss of the fluorescent light caused by the reflection on the substrate 10.
In one embodiment, the fluorescent layer 31 is made of a coronene material or a road-code material; wherein, the fluorescence peak wave band of coronene is 500nm, and the fluorescence peak wave band of the Leoman is 525 nm.
In this embodiment, the fluorescence reflection increasing layer 32 is made of hafnium oxide or tantalum pentoxide.
In this embodiment, the thickness of the fluorescence reflection increasing layer 32 corresponds to the wavelength of the fluorescence emitted from the fluorescent layer 31.
Specifically, the thickness of the fluorescence reflection increasing layer 32 is e, the wavelength of the fluorescence emitted from the fluorescent layer 31 is λ, for example, when the fluorescence of the fluorescent layer 31 is emitted to the fluorescence reflection increasing layer 32, reflection is formed on the upper surface and the lower surface of the fluorescence reflection increasing layer 32, and when the optical path difference between the two reflections and the wavelength of the light is in a corresponding relationship, and thin film interference occurs.
If the upper and lower surfaces are in a constructive interference relationship, light will be reflected primarily according to the conservation of light energy. (thin film interference is not simply the superposition of the amplitudes of the two waves, i.e. if the reflected light from the upper surface is I and the reflected light from the lower surface is I, the peak will meet the peak when the reflection phase of the thin film interference occurs, and the reflected light may be 4I, rather than simply 2I).
The optical path is a folding quantity, which is understood to be the distance that a light ray travels in a vacuum within the same time. If the refractive index of a medium is n2 (the refractive index in vacuum or air is 1), and the distance of the light ray propagating in the medium is L2, the value is converted into L2 × n2 in vacuum, and the value is the optical path length of the light ray propagating in the medium.
In the thin film interference, the optical path difference refers to the optical path difference between the upper surface reflected light and the lower surface reflected light, that is, the optical path length of the lower surface reflected light propagating through the medium (entering the medium from the upper surface, then being reflected by the lower surface and then being emitted from the upper surface), and it is known that the thickness of the thin film is the key for generating the thin film interference.
Combining the incident angle factor and the half-wave loss, the following calculation formula of the optical path difference of the thin film interference can be obtained:
(half-wave loss means that light travels from an optically thinner medium to an optically denser medium and loses half-wavelength light path when reflected)
Wherein e is the thickness of the medium, n2Is a bookRefractive index of medium, n1There is also a refractive index n of the lower medium for the refractive index of the upper medium and for half-wave loss consideration3And i is the incident angle. The latter (λ/2 or 0) is related to the half-wave loss, depending on the refractive index relationship of the three layers.
Generally, the conversion efficiency of the photoelectric conversion layer 20 for light is limited, and the conversion efficiency for different types of light is also different, so that the intensity of the converted charge signal can be increased by increasing the light incident into the photoelectric conversion layer 20 by adding the micro lens 60.
In one embodiment, as shown in fig. 6 to 7, the image sensor 01 further includes: a microlens 60 located between the photoelectric conversion layer 20 and the fluorescent layer 31; or, on the side of band-pass filter layer 40 away from fluorescent layer 31.
Specifically, for example, one mode may be that the ultraviolet light that is allowed to pass through is first screened by band-pass filter layer 40, and then condensed by microlens 60, and then incident into photoelectric conversion layer 20 for conversion. Alternatively, light is first condensed by microlens 60, and then the ultraviolet light allowed to pass is screened by band-pass filter 40 to be incident on photoelectric conversion layer 20 for conversion.
More specifically, the light transmittance of the microlens 60 can be changed by the selection of the preparation material, so that it can increase the light transmittance to ultraviolet light. For example, calcium fluoride (CaF2) or Fused Silica (Fused Silica) is used to fabricate the microlens 60. In this way, the microlenses 60 satisfying the transmittance of ultraviolet light can be provided on the photoelectric conversion layer 20 or on the band-pass filter layer 40, thereby increasing the conversion efficiency of the photoelectric conversion layer 20 to ultraviolet light.
In one embodiment, as shown in fig. 1 to 7, the photoelectric conversion layer 20 is provided with a spacer layer 70, and the spacer layer 70 separates the photoelectric conversion layer 20 in the extending direction of the fluorescent layer 31.
Specifically, the spacer layer 70 is used to separate the adjacent photoelectric conversion layers 20, so that each filter layer enables the photoelectric conversion layer 20 to receive only the light of the corresponding type, the light incident between the two adjacent photoelectric conversion layer 20 modules does not interfere with each other, the light of the corresponding type is more concentrated in the photoelectric conversion layer 20 interval, the charge signal generated by the PN junction of the photoelectric conversion layer 20 under the action of photon excitation is stronger, one image sensor 01 can generate different image signals, and further a more complex fused image is generated under the action of the image processing unit 02.
In the above two embodiments, in order to avoid contamination of the image sensor 01 by external impurities, an encapsulation layer may be added on the outermost layer of the image sensor 01, that is, the bandpass filter layer 40 or the microlens 60. The encapsulation layer may be glass or plastic support.
EXAMPLE III
Fig. 8 is an embodiment of an imaging device according to the present invention.
As shown in fig. 8, the present embodiment provides an imaging device, which includes the image sensor 01 and the image processing unit 02, wherein the image processing unit 02 generates a corresponding image based on an image signal output by the image sensor 01.
Specifically, the imaging device includes an image sensor 01 and an image processing unit 02, and may generate a single ultraviolet light image, or may receive multiple image signals to generate a fused image of a visible light image and an ultraviolet light image.
Specifically, the imaging device can be arranged on a handheld terminal such as a video camera, a mobile phone and a tablet personal computer, and can also be arranged on an intelligent household product.
Specifically, the image sensor in the third embodiment may directly adopt the image sensor provided in the first embodiment or the second embodiment, and the specific implementation structure may refer to the related contents described in the first embodiment or the second embodiment, which is not described herein again.
In summary, the fluorescent film is additionally provided with the fluorescence reflection increasing film, so that the situation that light rays spontaneously radiated by the fluorescent layer are radiated in all directions is eliminated, and the fluorescent light of ultraviolet rays emitted to the photoelectric conversion unit is not lost.
The scheme can realize the enhancement of charge signals generated by the photoelectric conversion layer, so that ultraviolet image signals are clear, and the ultraviolet imaging quality is improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
It should be noted that the above-mentioned embodiments illustrate rather than limit the solution, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or components not listed in a claim. The word "a" or "an" preceding a component or element does not exclude the presence of a plurality of such components or elements. The solution can be implemented by means of a device comprising several different components. In the claims enumerating several means, several of these means may be embodied by one and the same item. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. An image sensor, comprising:
a substrate;
a photoelectric conversion layer on one side of the substrate;
the fluorescent layer is positioned on one side of the photoelectric conversion layer, which is far away from the substrate;
the fluorescent reflection increasing layer is positioned on one side of the fluorescent layer, which is far away from the photoelectric conversion layer;
and the band-pass filter layer is positioned on one side of the fluorescence reflection increasing layer far away from the fluorescent layer.
2. The image sensor of claim 1, further comprising:
and the metal circuit layer is positioned on one side of the substrate, which is far away from the photoelectric conversion layer.
3. An image sensor, comprising:
a metal wiring layer;
a photoelectric conversion layer on one side of the metal wiring layer;
the fluorescent layer is positioned on one side of the photoelectric conversion layer, which is far away from the metal circuit layer;
the fluorescent reflection increasing layer is positioned on one side of the fluorescent layer, which is far away from the photoelectric conversion layer;
and the band-pass filter layer is positioned on one side of the fluorescence reflection increasing layer far away from the fluorescent layer.
4. The image sensor according to any one of claims 1 to 3,
the band-pass filter layer includes an ultraviolet filter layer and/or a visible light filter layer.
5. The image sensor of any one of claims 1 to 3, further comprising:
and the fluorescent anti-reflection layer is arranged on one side of the fluorescent layer close to the photoelectric conversion layer.
6. The image sensor according to any one of claims 1 to 3,
the fluorescent layer is made of a halation material or a road and code material; and/or the presence of a gas in the gas,
the fluorescence reflection increasing layer material is hafnium oxide or tantalum pentoxide.
7. The image sensor as set forth in claim 6,
the thickness of the fluorescence reflection increasing layer corresponds to the wavelength of the fluorescence emitted by the fluorescent layer.
8. The image sensor of any one of claims 1 to 3, further comprising:
and the micro lens is positioned between the photoelectric conversion layer and the fluorescent layer or positioned on one side of the band-pass filter layer, which is far away from the fluorescent reflection increasing layer.
9. The image sensor according to any one of claims 1 to 3,
the photoelectric conversion layer is provided with a spacing layer which separates the photoelectric conversion layer in the extension direction of the fluorescent layer.
10. An image forming apparatus, comprising:
the image sensor of any one of the preceding claims 1 to 9;
and an image processing unit which generates a corresponding image based on the image signal output by the image sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120373629.6U CN214154651U (en) | 2021-02-10 | 2021-02-10 | Image sensor and imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120373629.6U CN214154651U (en) | 2021-02-10 | 2021-02-10 | Image sensor and imaging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214154651U true CN214154651U (en) | 2021-09-07 |
Family
ID=77553514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120373629.6U Active CN214154651U (en) | 2021-02-10 | 2021-02-10 | Image sensor and imaging device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214154651U (en) |
-
2021
- 2021-02-10 CN CN202120373629.6U patent/CN214154651U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2432019B1 (en) | Imaging device and imaging apparatus | |
| JPWO2015159651A1 (en) | Photodetector, solid-state imaging device, and manufacturing method thereof | |
| US20120006980A1 (en) | Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production | |
| CN113497065B (en) | Imaging spectrum chip with spectrum and imaging functions and preparation method thereof | |
| US8415759B2 (en) | Down-converting and detecting photons | |
| JP2011040441A (en) | Solid-state imaging apparatus | |
| US7723763B2 (en) | Color photodetector apparatus with multi-primary pixels | |
| CN109564928A (en) | Solid-state image pickup element, solid-state image pickup element pupil bearing calibration, photographic device and information processing unit | |
| CN107731860A (en) | A kind of back-illuminated cmos image sensors and forming method thereof | |
| CN110137301A (en) | Graphene photodetector and preparation method thereof based on metal array structure | |
| CN109216388A (en) | Enhance the pixel cell structure and forming method of imaging sensor near-infrared performance | |
| KR20090016414A (en) | Image pick-up apparatus, conversion element and image pick-up method | |
| US20110198499A1 (en) | Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same | |
| CN214154651U (en) | Image sensor and imaging device | |
| JP6576357B2 (en) | Imaging device and manufacturing method thereof | |
| CN110323241A (en) | Imaging sensor and forming method thereof | |
| CN101958356A (en) | Photodetector element | |
| CN106340560A (en) | PtSi infrared detector for improving quantum efficiency | |
| CN207781619U (en) | A kind of photodetector | |
| JPH06260625A (en) | Image sensor device and its manufacture | |
| CN105206629A (en) | CMOS photosensitive element and preparation method | |
| CN102693995B (en) | Image sensor | |
| WO2023283919A1 (en) | Image sensor and electronic device | |
| Zhao et al. | Study of the converter based on photonic crystals filters and quantum dots for solar blind ultraviolet imaging system | |
| CN102637715B (en) | Image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |