CN214152880U - Heat radiation structure of integrated circuit built-in high-power resistor - Google Patents
Heat radiation structure of integrated circuit built-in high-power resistor Download PDFInfo
- Publication number
- CN214152880U CN214152880U CN202022859974.9U CN202022859974U CN214152880U CN 214152880 U CN214152880 U CN 214152880U CN 202022859974 U CN202022859974 U CN 202022859974U CN 214152880 U CN214152880 U CN 214152880U
- Authority
- CN
- China
- Prior art keywords
- resistor
- integrated circuit
- circuit built
- heat dissipation
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The utility model relates to a heat radiation structure of built-in high-power resistance of integrated circuit, the utility model discloses a resistance and heat dissipation layer, resistance are in the insulating layer, and the resistance top is provided with the multilayer metal level, in the multilayer metal level, is provided with communicating through-hole between every two-layer metal level. The utility model discloses under the condition of not extravagant domain area, reach quick radiating purpose.
Description
Technical Field
The utility model relates to an integrated circuit field especially relates to a heat radiation structure of built-in high-power resistance of integrated circuit.
Background
In the layout design process, considering how to arrange resistors, especially high-power resistors, the heating ratio of the resistors is high, so that the resistance of the resistors is influenced, and the precision of devices around the resistors is also influenced. Usually, in order to ensure heat dissipation, the distance between the resistors is increased to perform a distributed layout, which wastes area and slows heat dissipation.
SUMMERY OF THE UTILITY MODEL
The utility model discloses an solve the above-mentioned technical problem who exists among the background art, and provide a heat radiation structure of the built-in high-power resistance of integrated circuit, under the condition of not extravagant domain area, reach quick radiating purpose.
The technical solution of the utility model is that: the utility model relates to a heat radiation structure of built-in high-power resistance of integrated circuit, its special character lies in: the heat dissipation structure comprises a resistor and a heat dissipation layer, the resistor is located in the insulating layer, a plurality of metal layers are arranged above the resistor, and communicated through holes are formed between every two metal layers in the plurality of metal layers.
Preferably, a plurality of through holes are arranged between every two metal layers.
Preferably, the through holes are uniformly distributed between the two metal layers.
Preferably, the plurality of metal layers are disposed on the insulating layer in parallel with the resistor.
Preferably, the number of metal layers is 2 or more.
Preferably, the multilayer metal layer structure is arranged starting from the second layer of metal.
Preferably, the resistor is a poly resistor or a well resistor.
The utility model provides a pair of heat radiation structure of built-in high-power resistance of integrated circuit through set up the multilayer metal level directly over the resistance, is provided with communicating through-hole between every two-layer metal level. The heat generated by the resistor is quickly dissipated through the metal layer and the through hole, so that the aim of quickly dissipating heat is fulfilled.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, in the structure of the embodiment of the present invention, 4 metal layers are disposed directly above a poly resistor, a first metal layer MET1 is disposed above the poly resistor, the first metal layer MET1 is connected with the poly resistor through a contact hole contact, in order to avoid the metal layers from affecting the resistance of the resistor itself, the multilayer metal structure is disposed from a second metal layer MET2, a through hole via2 is disposed between the second metal layer MET2 and a third metal layer MET3, a through hole via3 is disposed between the third metal layer MET3 and a fourth metal layer MET4, in this embodiment, the through holes via2 and the through hole via3 are 4, and are uniformly distributed between the metal layers, and the poly resistor and the 4 metal layers are disposed in parallel on the insulating layer 1.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.
Claims (7)
1. A heat radiation structure of an integrated circuit built-in high-power resistor is characterized in that: the heat dissipation structure comprises a resistor and a heat dissipation layer, the resistor is arranged in the insulating layer, a plurality of metal layers are arranged above the resistor, and communicated through holes are formed between every two metal layers in the plurality of metal layers.
2. The heat dissipation structure of the integrated circuit built-in high-power resistor as recited in claim 1, wherein: and a plurality of through holes are arranged between every two metal layers.
3. The heat dissipation structure of the integrated circuit built-in high-power resistor as recited in claim 2, wherein: the through holes are uniformly distributed between the two metal layers.
4. The heat dissipation structure of the integrated circuit built-in high-power resistor as recited in claim 3, wherein: the multilayer metal layer is parallel to the resistor and arranged on the insulating layer.
5. The heat dissipation structure of the integrated circuit built-in high-power resistor as recited in claim 4, wherein: the multilayer metal layer is 2 layers or more than 2 layers.
6. The heat dissipation structure of the integrated circuit built-in high-power resistor as recited in claim 5, wherein: the multi-layer metal layer structure is arranged from the second layer of metal.
7. The heat dissipation structure of the integrated circuit built-in high-power resistor as recited in claim 6, wherein: the resistor is a poly resistor or a well resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022859974.9U CN214152880U (en) | 2020-12-05 | 2020-12-05 | Heat radiation structure of integrated circuit built-in high-power resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022859974.9U CN214152880U (en) | 2020-12-05 | 2020-12-05 | Heat radiation structure of integrated circuit built-in high-power resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214152880U true CN214152880U (en) | 2021-09-07 |
Family
ID=77583653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022859974.9U Active CN214152880U (en) | 2020-12-05 | 2020-12-05 | Heat radiation structure of integrated circuit built-in high-power resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214152880U (en) |
-
2020
- 2020-12-05 CN CN202022859974.9U patent/CN214152880U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5326269B2 (en) | Electronic component built-in wiring board, and heat dissipation method for electronic component built-in wiring board | |
| US8859908B2 (en) | Package carrier | |
| JP2007013109A (en) | Communication circuit module | |
| CN105188318A (en) | Heat radiation device, electronic equipment and manufacturing method | |
| US20090252950A1 (en) | Alumina substrate and method of making an alumina substrate | |
| US20130094152A1 (en) | Electronic device and heat sink employing the same | |
| CN214152880U (en) | Heat radiation structure of integrated circuit built-in high-power resistor | |
| JP2005183559A (en) | Printed wiring board and method for manufacturing the same | |
| WO2018018961A1 (en) | Pcb, method for manufacturing same, and mobile terminal | |
| JP2015076567A (en) | Ceramic wiring board | |
| JP2664485B2 (en) | Ceramic multilayer wiring board | |
| US20150053475A1 (en) | Multi layered printed circuit board | |
| KR101018231B1 (en) | Circuit board and manufacturing method of the same | |
| JP6279873B2 (en) | Ceramic wiring board | |
| JP2007335842A (en) | Chip type electronic component | |
| US20080093702A1 (en) | Semiconductor device having a passive device | |
| US9373556B2 (en) | Module IC package structure and method for manufacturing the same | |
| CN219514283U (en) | Printed circuit board and electronic equipment | |
| JP7321877B2 (en) | power converter | |
| TW201919465A (en) | Thermal-dissipating substrate structure | |
| CN117936205A (en) | Resistor structure and manufacturing method thereof | |
| CN110383473A (en) | Equipped with the power electronic circuit and integrated approach of the busbar for forming radiator | |
| KR101009080B1 (en) | A heat radiating printed circuit board and a method of manufacturing the same | |
| TWI697264B (en) | High heat dissipation circuit board and manufacturing method thereof | |
| JP2007096009A (en) | Laminated circuit substrate and portable electronic equipment with the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |