CN214151528U - Power supply circuit and electronic terminal thereof - Google Patents

Abstract

The embodiment of the application discloses supply circuit and electronic terminal thereof for set up electronic components through the module integration mode that stands separately, reduce the space that electronic components occupy in small-size electronic terminal, reduction in production cost has promoted packaging structure's that stands separately supply circuit's practicality. The power supply circuit in the embodiment of the application comprises a microprocessor, a voltage control module, a driving module, a positive and negative current switch module and a heating module; the power supply circuit is used for respectively integrally packaging and arranging the microprocessor, the voltage control module, the driving module, the positive and negative current switch module and the electronic components in the heating module on a circuit board according to the modules in a module discrete integration mode.

Description

Power supply circuit and electronic terminal thereof

Technical Field

The present disclosure relates to electronic technologies, and in particular, to a power supply circuit and an electronic terminal thereof.

Background

Packaging (Package) is a process of assembling an integrated circuit into a chip end product, in which a produced integrated circuit die is placed on a substrate for bearing, pins are led out, and then the integrated circuit die is fixed and packaged into a whole.

At present, a known integrated power supply circuit for heating and atomizing adopts a mode that each electronic component is separately packaged on a circuit board, but along with the continuous promotion of the function diversification of a small electronic terminal using the power supply circuit, required components are also continuously increased, so that the space occupied by the electronic components in the small electronic terminal is larger and larger, the production cost is increased, and the practicability of the integrated power supply circuit and the electronic terminal using the power supply circuit is reduced.

Disclosure of Invention

The embodiment of the application provides a power supply circuit and an electronic terminal thereof, which can set electronic components in a module discrete integration mode, reduce the space occupied by the electronic components in a small-sized electronic terminal, reduce the production cost and improve the practicability of the power supply circuit of a discrete packaging structure.

In view of the above, a first aspect of the present application provides a power supply circuit, which includes a microprocessor, a voltage control module, a driving module, a positive and negative current switch module, and a heating module;

the power supply circuit is used for respectively integrally packaging and arranging electronic components in the microprocessor, the voltage control module, the positive and negative current switch module, the driving module and the heating module on a circuit board according to the modules in a module discrete integration mode.

Optionally, the microprocessor is configured to control the voltage control module, the driving module and the forward-reverse connection current switch module;

the voltage control module is used for adjusting a power supply voltage to a first target voltage and a second target voltage and coupling the second target voltage to the driving module, and the first target voltage is used for controlling the positive and negative current switch modules to be switched on and off;

the driving module is used for coupling the first target voltage to the positive and negative connection current switch module so as to drive the positive and negative connection current switch module to work;

the positive and negative connection current switch module is used for generating a positive connection current and a negative connection current according to the second target voltage, and coupling different preset time lengths of the positive connection current and the negative connection current in the same signal period of the second target voltage to the heating module;

the heating module is used for alternately heating according to the forward current and the reverse current.

Optionally, the positive and negative-connection current switch module includes a first current switch submodule and a second current switch submodule;

the different preset time lengths comprise a first preset time length and a second preset time length;

the first current switch submodule is used for conducting within the first preset time length, generating the forward current according to the second target voltage and coupling the forward current to the heating module, wherein the first preset time length is a first time length preset in the same voltage signal period by the second target voltage;

the second current switch submodule is used for conducting within a second preset time length, generating the reverse connection current according to the second target voltage and coupling the reverse connection current to the heating module, wherein the second preset time length is a second time length preset in the same voltage signal period of the second target voltage, and the sum of the time lengths of the first preset time length and the second preset time length is not more than the time length threshold value of the same voltage signal period.

Optionally, the different preset durations further include a third preset duration, or a duration from the third preset duration to an nth preset duration, where N represents an ordinal number.

Optionally, the first preset time period and the second preset time period are equal or unequal.

Optionally, the current amplitude of the forward connection current for the first preset time period is equal to or different from the current amplitude of the reverse connection current for the second preset time period.

Optionally, the waveform of the forward connection current for the first preset time period is the same as or different from the waveform of the reverse connection current for the second preset time period.

Optionally, the first current switching sub-module comprises:

a first transistor, a second pole of the first transistor being connected to one end of the heating module;

a second transistor, a first pole of which is grounded, and a second pole of which is connected with the other end of the heating module;

the second current switching submodule includes:

a third transistor, a second pole of the third transistor is connected with the other end of the heating module;

and a fourth transistor, wherein a first pole of the fourth transistor is grounded, and a second pole of the fourth transistor is connected with one end of the heating module.

Optionally, the first transistor and the third transistor are P-type metal oxide semiconductors, while the second transistor and the fourth transistor are N-type metal oxide semiconductors;

alternatively, the first and second electrodes may be,

the first transistor and the third transistor are N-type metal oxide semiconductors, while the second transistor and the fourth transistor are P-type metal oxide semiconductors;

alternatively, the first and second electrodes may be,

the first transistor and the third transistor are NPN type triodes, the second transistor and the fourth transistor are PNP type triodes, and the second transistor and the fourth transistor are NPN type triodes.

Optionally, the number of transistors included in the first current switch sub-module is equal to or different from the number of transistors included in the second current switch sub-module.

Optionally, the first current switch submodule and the second current switch submodule each include more than 3 transistors;

alternatively, the first and second electrodes may be,

one of the first current switch submodule and the second current switch submodule comprises more than 3 transistors, and the other submodule comprises less than 3 transistors.

Optionally, the driving module comprises:

a first driving element, a first pole of the first driving element being connected to a third pole of the first transistor, a second pole of the first driving element being grounded, and the third pole of the driving element being connected to the microprocessor;

a second driving element having a first pole coupled to a third pole of the third transistor, a second pole coupled to ground, and a third pole coupled to the microprocessor.

Optionally, the first driving element and the second driving element are both NPN-type triodes;

alternatively, the first and second electrodes may be,

the first driving element and the second driving element are both PNP type triodes;

alternatively, the first and second electrodes may be,

the first driving element and the second driving element are both N-type metal oxide semiconductors;

alternatively, the first and second electrodes may be,

the first driving element and the second driving element are both P-type metal oxide semiconductors.

Optionally, the drive module comprises more than 3 drive elements.

Optionally, the voltage control module comprises:

the boost control circuit is used for boosting the power supply voltage to obtain a first target voltage and transmitting the first target voltage to the first current switch submodule and the second current switch submodule respectively, one end of the boost control circuit is connected with a third pole of the second transistor and a third pole of the fourth transistor respectively, and the other end of the boost control circuit is connected with a power supply;

and the power conversion circuit is used for modulating the power supply voltage to the second target voltage, one end of the power conversion circuit is respectively connected with the first pole of the first transistor and the first pole of the third transistor, and the other end of the power conversion circuit is connected with the power supply.

A second aspect of the present application provides an electronic terminal comprising a supply circuit as described in the embodiments of the first aspect above.

From the above technical solutions, the power supply circuit of the discrete package structure in the embodiment of the present application includes a microprocessor, a voltage control module, a driving module, a forward/reverse current switch module and a heating module, and the power supply circuit integrates the microprocessor, the voltage control module, the forward/reverse current switch module, the driving module and electronic components in the heating module, according to the modules, the power supply circuit of the integrated package is separated according to the structure of each module, compare with the structure of each electronic components discrete package in each module, can reduce shared area and the space that occupies in electronic terminal on the circuit board by a wide margin, reduction in production cost has consequently promoted this discrete package structure's power supply circuit's practicality.

Drawings

FIG. 1 is a schematic diagram of a power supply circuit according to an embodiment of the present disclosure;

FIG. 2 is a schematic diagram of another power supply circuit according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram of another power supply circuit in the embodiment of the present application.

Detailed Description

The embodiment of the application provides a power supply circuit and an electronic terminal thereof, which are used for setting electronic components in a module discrete integration mode, reducing the space occupied by the electronic components in a small-sized electronic terminal, reducing the production cost and improving the practicability of the power supply circuit.

The technical solutions in the embodiments of the present application are described clearly and completely below with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. The following embodiments and their technical features may be combined with each other without conflict.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a power supply circuit according to an embodiment of the present disclosure.

The embodiment of the present application provides a power supply circuit, which includes a power supply device 101, a microprocessor 102, a voltage control module 103, a driving module 104, a positive and negative current switch module 105, and a heating module 106;

the power supply circuit integrates and packages electronic components in the microprocessor 102, the voltage control module 103, the driving module 104, the positive and negative current switch module 105 and the heating module 106 respectively according to the modules and is arranged on a circuit board in a module discrete integration mode.

The package form may be an in-line package or a surface mount package, and the in-line package may be further classified into a single in-line package, a single in-line zigzag package, a dual in-line package, and a ball grid array package, and the package material may be a metal package, a plastic package, or a ceramic package, and the form and the material of the package are not limited herein.

In the embodiment of the application, because power supply circuit passes through the mode that each module is integrated respectively, with microprocessor, voltage control module, drive module, the electronic components in positive and negative electricity current switch module and the heating module, according to affiliated each module respectively integrated package and set up on the circuit board, consequently compare with the structure of each electronic components discrete package in each module, can reduce shared area and the space that occupies in electronic terminal on the circuit board by a wide margin, and production cost is reduced, consequently, this discrete package structure's power supply circuit's practicality has been promoted.

In the embodiment of the present application, specifically, the microprocessor 102 is configured to control the voltage control module 103, the driving module 104, and the forward/reverse current switch module 105;

the voltage control module 103 is configured to regulate the power supply voltage to a first target voltage and a second target voltage, and couple the second target voltage to the driving module, where the first target voltage is used to control the on/off of the forward/reverse current switch module;

the driving module 104 is configured to couple the first target voltage to the forward/reverse current switch module 105 to drive the forward/reverse current switch module 105 to operate;

the positive and negative connection current switch module 105 is configured to generate a positive connection current and a negative connection current according to a second target voltage, and couple different preset durations of the positive connection current and the negative connection current in a same signal period of the second target voltage to the heating module 106;

the heating module 106 is used for alternately heating according to the forward current and the reverse current.

It should be noted that the heating module 106 in the embodiment of the present application may be a heating resistor, and is not limited herein.

In the power supply circuit in the embodiment of the application, as the microprocessor controls the voltage control module, the driving module and the forward and reverse current switch module, the voltage control module adjusts the power supply voltage to a first target voltage and a second target voltage and couples the second target voltage to the driving module, the driving module couples the first target voltage for controlling the on/off of the forward and reverse current switch module to drive the forward and reverse current switch module to work, then the forward and reverse current switch module generates the forward current and the reverse current according to the second target voltage and couples the different preset durations of the forward current and the reverse current in the same signal period of the second target voltage to the heating module, and the heating module alternately heats according to the forward current and the reverse current, the heating device provided with the heating module can be uniformly heated, thereby promoted this packaging structure's discrete power supply circuit's performance, prolonged the life that is provided with the small-size electronic terminal of this heating module.

The structure of another power supply circuit in the embodiment of the present application is described above, and fig. 2 is a schematic structural diagram of another power supply circuit in the embodiment of the present application.

In the embodiment of the present application, the power supply circuit includes a power supply device 201, a microprocessor 202, a voltage control module 203, a driving module 204, a first current switch submodule 205, a second current switch submodule 206, and a heating module 207.

That is, in the embodiment of the present application, the forward-reverse-connection current switch module may include a first current switch submodule 205 and a second current switch submodule 206.

It should be noted that the different preset time periods in the foregoing embodiment of fig. 1 may include a first preset time period and a second preset time period.

In the embodiment of the present application, specifically, the first current switch sub-module 205 is configured to be turned on for a first preset time period and couple the forward current to the heating module 207.

It should be noted that the first preset time period is a first time period preset in the same voltage signal period by the second target voltage.

The second current switch submodule 206 is configured to conduct for a second predetermined duration, generate a reverse current according to a second target voltage, and couple the reverse current to the heating module 207.

It should be noted that the second preset time duration is a second time duration preset in the same voltage signal period by the second target voltage, and a sum of the first preset time duration and the second preset time duration does not exceed a time duration threshold of the same voltage signal period.

Further, the different preset durations may further include a third preset duration, or a third preset duration to an nth preset duration, where N represents an ordinal number. That is to say, the second target voltage may include a first preset time period, a second preset time period, and a third preset time period, and may also include the first preset time period, the second preset time period, the third preset time period, and the nth preset time period in the same voltage signal period. The number of preset durations included in the same voltage signal period is not limited herein.

Further, the first preset duration and the second preset duration may be equal or unequal. Similarly, the first preset time period, the second preset time period, the third preset time period, and the nth preset time period after the third preset time period may be equal to or unequal to each other, and are not limited herein.

Further, the current amplitude of the forward connection current for the first preset time period and the current amplitude of the reverse connection current for the second preset time period may be equal or unequal, and are not limited herein.

Further, the waveform of the forward connection current for the first preset time period and the waveform of the reverse connection current for the second preset time period may be the same or different, and are not limited herein.

Further, the first current switch sub-module 205 may include:

a first transistor, a second pole of which is connected to one end of the heating module;

a second transistor, a first pole of which is grounded and a second pole of which is connected with the other end of the heating module;

the second current switch submodule 206 may include:

a third transistor, a second pole of which is connected to the other end of the heating module;

and a fourth transistor, a first pole of which is grounded, and a second pole of which is connected to one end of the heating module.

Further, the driving module 204 may include:

a first driving element, a first pole of the first driving element is connected with a third pole of the first transistor, a second pole of the first driving element is grounded, and the third pole of the first driving element is connected with the microprocessor;

and a second driving element, a first pole of the second driving element being connected to the third pole of the third transistor, a second pole of the second driving element being grounded, and a third pole of the second driving element being connected to the microprocessor.

Further, the voltage control module 203 may include:

and the boosting control circuit is used for boosting the power supply voltage to obtain a first target voltage, transmitting the first target voltage to the first current switch submodule and the second current switch submodule respectively, connecting one end of the boosting control circuit with a third pole of the second transistor and a third pole of the fourth transistor respectively, and connecting the other end of the boosting control circuit with the power supply.

And the power conversion circuit is used for modulating the power supply voltage to a second target voltage, one end of the power conversion circuit is respectively connected with the first pole of the first transistor and the first pole of the third transistor, and the other end of the power conversion circuit is connected with the power supply.

It should be noted that the first transistor, the second transistor, the third transistor, and the fourth transistor may be field effect transistors or triodes, and are not limited herein.

The first driving element and the second driving element may be both field effect transistors or triodes, and are not limited herein.

In the embodiment of the application, the first transistor to the fourth transistor integrated package that include in the positive and negative current switch module can be in the same place, consequently with the encapsulation of separating alone of whole positive and negative current switch module, compare like this with the structure of every transistor package, can save the space of installing in circuit board and electronic terminal by a wide margin, reduction in production cost promotes supply circuit and is provided with this supply circuit's practicality. It should be noted that, the first current switch submodule and the second current switch submodule included in the forward-reverse connection current switch module may respectively include more transistors, and the number of the transistors included in the first current switch submodule may be the same as or different from the number of the transistors included in the second current switch submodule, which is not limited herein. More transistors are arranged, so that high-power voltage can be divided, the burden of each transistor is reduced, and the service life of each transistor is prolonged.

In addition, in the embodiment of the application, the first driving element and the second driving element included in the driving module can be integrally packaged together, so that the driving module is separately packaged, compared with the case that each driving element is independently packaged, the space for installing the driving module in a circuit board and an electronic terminal can be saved, and the practicability of the integrated circuit and the integrated circuit provided with the integrated circuit is improved. It should be noted that, the number of driving elements included in the driving module, such as a transistor or a field effect transistor, may also be more than two, for example, 3, 4 or more, and the specific number is not limited herein. More driving elements are arranged, and the voltage division of high power can be realized, so that the load of the driving elements is reduced, and the service life of the driving elements is prolonged.

When the first to fourth transistors are all field effect transistors, the first poles of the first, second, third and fourth transistors may be source poles, the second poles may be drain poles, and the third poles may be gate poles. That is, the first transistor and the third transistor may be P-type Metal Oxide Semiconductor (PMOS) transistors, while the second transistor and the fourth transistor may be N-type Metal Oxide Semiconductor (NMOS) transistors.

Further, the number of the PMOS transistors may be 3 or more, the number of the NMOS transistors may also be 3 or more, and the number of the PMOS transistors may be the same as or different from the number of the NMOS transistors, which is not limited herein.

Conversely, the first transistor and the third transistor may be NMOS transistors, and the second transistor and the fourth transistor may be PMOS transistors, which is not limited herein.

When the first transistor to the fourth transistor are both triodes, the first transistor and the third transistor may be NPN type (N-P-N semiconductor transistor), and the second transistor and the fourth transistor may be PNP type, or vice versa, and the first transistor and the third transistor may be PNP type, and the second transistor and the fourth transistor may be NPN type, which is not limited herein.

The first electrodes of the first driving element and the second driving element may be collectors, the second electrodes may be emitters, and the third electrodes may be bases. That is, the first driving element and the second driving element may be both NPN type and PNP type, and the present disclosure is not limited thereto.

In addition, one of the first driving element and the second driving element may be an NPN type, and the other one may be a PNP type, which is not limited herein.

In addition, the first driving element and the second driving element may also be field effect transistors, and are not limited herein.

The power conversion circuit may be a full-bridge power conversion circuit, a half-bridge power conversion circuit, or a push-pull power conversion circuit, and is not limited herein.

Preferably, the specific scheme for implementing the above embodiment of the present application is as follows:

referring to fig. 3, fig. 3 is a schematic structural diagram of another power supply circuit according to an embodiment of the present disclosure.

The specific scheme for realizing one power supply circuit in the embodiment of the application is as follows:

as shown in fig. 3, the power supply circuit in this embodiment includes a power supply 301, a microprocessor 302, a voltage control module 303, a driving module 304, a positive and negative current switch module 305, and a heating module 306. Referring to fig. 3, the voltage control module 303, the driving module 304, and the forward/reverse current switch module 305 are respectively indicated by dashed boxes, and each module is independently packaged together according to different modules.

In this embodiment, the first current switch submodule of the power supply circuit includes:

a first PMOS tube Q1, wherein the drain D1 of the first PMOS tube Q1 is connected with one end of a heating resistor in the atomizer;

and a source S6 of the second NMOS tube Q6 and Q6 is grounded, and a drain D6 of the second NMOS tube Q6 is connected with the other end of the heating resistor of the atomizer.

The second current switch submodule of the supply circuit comprises:

a third PMOS tube Q4, wherein the drain D4 of the third PMOS tube Q4 is connected with the other end of the heating resistor of the atomizer;

and a fourth NMOS transistor Q3, a source S3 of the fourth NMOS transistor Q3 is grounded, and a drain D3 of the fourth NMOS transistor Q3 is connected to one end of the heating resistor of the atomizer.

The drive module of the power supply circuit comprises:

a first triode Q2, wherein the collector C2 of the first triode Q2 is connected with the grid G1 of the first PMOS tube Q1, the emitter E2 of the first triode Q2 is grounded, and the base B2 of the first triode Q2 is connected with the microprocessor;

and a second triode Q5, wherein the collector C5 of the second triode Q5 is connected with the grid G4 of the third PMOS tube Q4, the emitter E5 of the second triode Q5 is grounded, and the base B5 of the second triode Q5 is connected with the microprocessor.

The voltage control module of the power supply circuit comprises:

the boost control circuit is used for boosting the power supply voltage to obtain a first target voltage and respectively transmitting the first target voltage to the first current switch submodule and the second current switch submodule, one end of the boost control circuit is respectively connected with a grid G6 of a second NMOS tube Q6 and a grid G3 of a Q3 of a fourth NMOS tube, and the other end of the boost control circuit is connected with a power supply;

and the power conversion circuit modulates the power supply voltage to a second target voltage, one end of the power conversion circuit is respectively connected with the source S1 of the first PMOS transistor Q1 and the source S4 of the third NMOS transistor Q4, and the other end of the power conversion circuit is connected with the power supply.

It should be noted that, in this embodiment of the application, the first transistor Q2 and the second transistor Q5 may be of an NPN type, or may also be of a PNP type, or may also be of an NPN type, or may also be of a PNP type, and specific details thereof are not limited herein.

In the embodiment of the present application, please refer to fig. 3, although the source electrodes of the first to fourth NMOS transistors all have 3 pins and the drain electrodes all have 4 pins, the number of the pins is not limited by the source electrode and the drain electrode of each NMOS transistor, and may also be 1 pin, 2 pins or multiple pins, and one of the advantages of the multiple pins is that the heat dissipation of the NMOS transistors is facilitated and the NMOS transistors are not easily burned out.

In addition, it should be noted that the resistors R5, R6, R8, and R9 shown in fig. 3 are driving resistors, and R19 and R20 are grounding resistors, which are not described again.

In the embodiment of the present application, the microprocessor controls the first transistor Q2 and the second transistor Q5 in the driving module 304 to be alternately turned on and off according to the first target voltage through the boost control module 303, so that the first switching current sub-module (the first PMOS transistor Q1 and the second NMOS transistor Q6) in the forward and reverse current switching module 305 is turned on for a first preset time in the same signal period of the second target voltage, and generates a forward current according to the second target voltage, at which time the second switching current sub-module (the third PMOS transistor Q4 and the fourth NMOS transistor Q3) is turned off, and then the second switching current sub-module (the third PMOS transistor Q4 and the fourth NMOS transistor Q3) is turned on for a second preset time in the same signal period of the second target voltage, and generates a reverse current according to the second target voltage, at which time the first switching current sub-module (the first PMOS transistor Q1 and the second NMOS transistor Q6) is turned off, therefore, the heating resistor can be alternately supplied with forward current and reverse current during different preset periods, the service life of the heating device and the service life of the electronic terminal of the heating device are prolonged, the production cost is reduced, the practicability of the power supply circuit of the discrete packaging structure is improved, and due to the fact that each module is respectively and independently integrated and packaged, the space of each component occupying the circuit board and the electronic terminal is reduced, the miniaturization of a product is further achieved, and the practicability of the power supply circuit and the electronic terminal is improved.

Although the application has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. This application is intended to embrace all such modifications and variations and is limited only by the scope of the appended claims. That is, the above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all equivalent structures or equivalent flow transformations made by using the contents of the specification and the drawings, such as mutual combination of technical features between various embodiments, or direct or indirect application to other related technical fields, are included in the scope of the present application.

In addition, structural elements having the same or similar characteristics may be identified by the same or different reference numerals. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features.

In other instances, well-known structures and processes are not shown in detail in order not to obscure the description of the present application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

Claims (16)

1. A power supply circuit is characterized by comprising a microprocessor, a voltage control module, a driving module, a positive and negative current switch module and a heating module;

the power supply circuit is used for respectively integrally packaging and arranging the microprocessor, the voltage control module, the driving module, the positive and negative current switch module and the electronic components in the heating module on a circuit board according to the modules in a module discrete integration mode.

2. The power supply circuit of claim 1, wherein:

the microprocessor is used for controlling the voltage control module, the driving module and the positive and negative current switch modules;

the voltage control module is used for adjusting a power supply voltage to a first target voltage and a second target voltage and coupling the second target voltage to the driving module, and the first target voltage is used for controlling the positive and negative current switch modules to be switched on and off;

the driving module is used for coupling the first target voltage to the positive and negative connection current switch module so as to drive the positive and negative connection current switch module to work;

the positive and negative connection current switch module is used for generating a positive connection current and a negative connection current according to the second target voltage, and coupling different preset time lengths of the positive connection current and the negative connection current in the same signal period of the second target voltage to the heating module;

the heating module is used for alternately heating according to the forward current and the reverse current.

3. The power supply circuit of claim 2, wherein the positive-negative current switch module comprises a first current switch submodule and a second current switch submodule;

the different preset time lengths comprise a first preset time length and a second preset time length;

the first current switch submodule is used for conducting within the first preset time length, generating the forward current according to the second target voltage and coupling the forward current to the heating module, wherein the first preset time length is a first time length preset in the same voltage signal period by the second target voltage;

the second current switch submodule is used for conducting within a second preset time length, generating the reverse connection current according to the second target voltage and coupling the reverse connection current to the heating module, wherein the second preset time length is a second time length preset in the same voltage signal period of the second target voltage, and the sum of the time lengths of the first preset time length and the second preset time length is not more than the time length threshold value of the same voltage signal period.

4. The power supply circuit of claim 3, wherein the different preset durations further comprise a third preset duration, or the third preset duration is up to an Nth preset duration, where N represents an ordinal number.

5. The power supply circuit of claim 3, wherein the first predetermined duration and the second predetermined duration are equal or unequal.

6. The power supply circuit according to claim 3, wherein the current amplitude of the forward connection current for the first preset time period is equal to or different from the current amplitude of the reverse connection current for the second preset time period.

7. The power supply circuit according to claim 3, wherein the waveform of the forward connection current for the first preset time period is the same as or different from the waveform of the reverse connection current for the second preset time period.

8. The power supply circuit as claimed in claim 3, wherein:

the first current switching sub-module comprises:

a first transistor, a second pole of the first transistor being connected to one end of the heating module;

a second transistor, a first pole of which is grounded, and a second pole of which is connected with the other end of the heating module;

the second current switching submodule includes:

a third transistor, a second pole of the third transistor is connected with the other end of the heating module;

and a fourth transistor, wherein a first pole of the fourth transistor is grounded, and a second pole of the fourth transistor is connected with one end of the heating module.

9. The power supply circuit of claim 8, wherein:

the first transistor and the third transistor are P-type metal oxide semiconductors, while the second transistor and the fourth transistor are N-type metal oxide semiconductors;

alternatively, the first and second electrodes may be,

the first transistor and the third transistor are N-type metal oxide semiconductors, while the second transistor and the fourth transistor are P-type metal oxide semiconductors;

alternatively, the first and second electrodes may be,

the first transistor and the third transistor are NPN type triodes, the second transistor and the fourth transistor are PNP type triodes, and the second transistor and the fourth transistor are NPN type triodes.

10. The power supply circuit of claim 3, wherein the first current switch submodule includes a same number of transistors as or a different number of transistors from the second current switch submodule.

11. The power supply circuit of claim 3, wherein:

the first current switch submodule and the second current switch submodule both comprise more than 3 transistors;

alternatively, the first and second electrodes may be,

one of the first current switch submodule and the second current switch submodule comprises more than 3 transistors, and the other submodule comprises less than 3 transistors.

12. The power supply circuit of claim 8, wherein the driving module comprises:

a first driving element, a first pole of the first driving element being connected to a third pole of the first transistor, a second pole of the first driving element being grounded, the third pole of the first driving element being connected to the microprocessor;

a second driving element having a first pole coupled to a third pole of the third transistor, a second pole coupled to ground, and a third pole coupled to the microprocessor.

13. The power supply circuit of claim 12, wherein:

the first driving element and the second driving element are both NPN type triodes;

alternatively, the first and second electrodes may be,

the first driving element and the second driving element are both PNP type triodes;

alternatively, the first and second electrodes may be,

the first driving element and the second driving element are both N-type metal oxide semiconductors;

alternatively, the first and second electrodes may be,

the first driving element and the second driving element are both P-type metal oxide semiconductors.

14. The power supply circuit of claim 8, wherein the driving module comprises more than 3 driving elements.

15. The power supply circuit of claim 14, wherein the voltage control module comprises:

the boost control circuit is used for boosting the power supply voltage to obtain a first target voltage and transmitting the first target voltage to the first current switch submodule and the second current switch submodule respectively, one end of the boost control circuit is connected with a third pole of the second transistor and a third pole of the fourth transistor respectively, and the other end of the boost control circuit is connected with a power supply;

and the power conversion circuit is used for modulating the power supply voltage to the second target voltage, one end of the power conversion circuit is respectively connected with the first pole of the first transistor and the first pole of the third transistor, and the other end of the power conversion circuit is connected with the power supply.

16. An electronic terminal, characterized in that it comprises a supply circuit as claimed in claims 1 to 15.

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