CN214069828U - Silicon controlled rectifier circuit and device - Google Patents
Silicon controlled rectifier circuit and device Download PDFInfo
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- CN214069828U CN214069828U CN202022680528.1U CN202022680528U CN214069828U CN 214069828 U CN214069828 U CN 214069828U CN 202022680528 U CN202022680528 U CN 202022680528U CN 214069828 U CN214069828 U CN 214069828U
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 156
- 239000010703 silicon Substances 0.000 title claims abstract description 156
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000011664 signaling Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
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- 101000668170 Homo sapiens RNA-binding motif, single-stranded-interacting protein 2 Proteins 0.000 description 12
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- 102100039692 RNA-binding motif, single-stranded-interacting protein 1 Human genes 0.000 description 9
- 101150105073 SCR1 gene Proteins 0.000 description 9
- 101100134054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NTG1 gene Proteins 0.000 description 9
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Abstract
The utility model belongs to the technical field of the silicon controlled rectifier, a silicon controlled rectifier circuit and device is disclosed. The silicon-controlled rectifier circuit comprises a rectifier module, a control module and a drive module, the grounding ends of the control module and the drive module are connected with the bus, and the control module acquires the voltage between the second end and the third end of each silicon-controlled rectifier tube in the rectifier module to generate a drive signal; and/or the control module collects the voltage of the input end of the power grid to generate a driving signal; the control module transmits the driving signal to the driving module; the driving module controls each silicon controlled rectifier tube according to the driving signal. The utility model discloses in, use control module control rectifier module to send out the ripples and phase shift angle triggers need not go up electric resistance slowly, set up control module and drive module's earthing terminal on the bus, when using the high resistance to keep apart the mode and gather electric wire netting input voltage, can not bring the leakage current to the secondary side, drive module's earthing terminal need not keep apart with rectifier module's control end simultaneously, reduces the cost and prevents the leakage current with the time delay.
Description
Technical Field
The utility model relates to a silicon controlled rectifier technical field especially relates to a silicon controlled rectifier circuit and device.
Background
There are generally two thyristor driving schemes, the software scheme: using processors such as an MCU (microprogrammed control Unit) and the like to detect the voltage of the power grid, and then directly driving the silicon controlled rectifier after judging, wave generating and power amplifying; pure hardware solution: processors such as an MCU (microprogrammed control Unit) are not used, and the silicon controlled rectifier is directly driven after judgment, wave generation and power amplification are carried out only after a hardware circuit is used for detecting the related voltage of a power grid. The silicon controlled rectifier driving scheme, in which a processor such as an MCU is used to control the silicon controlled rectifier to generate waves and a power-on snubber resistor is not used, generally sets the ground of the driving circuit on the secondary side ground. If the voltage of the power grid is detected in a high-resistance isolation mode for control, leakage current when voltage resistance is applied between the primary side and the secondary side needs to be considered, and the leakage current flowing through a high-resistance isolation path is large; meanwhile, the ground of the driving circuit needs to be isolated from the driving pole of the thyristor on the three-phase tube, so that the cost and the time delay are increased.
The above is only for the purpose of assisting understanding of the technical solutions of the present invention, and does not represent an admission that the above is the prior art.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a main aim at provides a silicon controlled rectifier circuit and device, the ground that aims at solving current silicon controlled rectifier drive circuit sets up at the secondary side, has the technical problem that needs keep apart when the silicon controlled rectifier drive and cause with high costs, time delay and leakage current.
In order to achieve the above object, the utility model provides a silicon controlled rectifier circuit, silicon controlled rectifier circuit includes: a rectifier module, a control module and a drive module, wherein the control module is respectively connected with the rectifier module and the drive module, the rectifier module and the control module are both connected with the input end of the power grid, the rectifier module comprises at least one silicon controlled rectifier tube, the first end of each silicon controlled rectifier tube is connected with the drive module, the second end of each silicon controlled rectifier tube is connected with the input end of the power grid, the third end of each silicon controlled rectifier tube is connected with the bus, and the grounding ends of the control module and the drive module are connected with the bus, wherein,
the control module is used for acquiring voltage between the second end and the third end of each silicon controlled rectifier tube in the rectifier module and generating a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube; and/or the control module is used for acquiring the voltage of the input end of the power grid and generating a driving signal according to the voltage of the input end of the power grid;
the control module is further used for transmitting the driving signal to the driving module;
and the driving module is used for receiving the driving signal and controlling each silicon controlled rectifier tube according to the driving signal.
Optionally, the first end of each of the silicon controlled rectifiers is a control end, the second end of each of the silicon controlled rectifiers is an anode, and the third end of each of the silicon controlled rectifiers is a cathode.
Optionally, the control module is further configured to collect a voltage between a second end of each scr in the rectifier module and the bus, and generate a driving signal according to the voltage between the second end of each scr and the bus;
and/or the control module is used for acquiring the voltage among the first phase, the second phase and the third phase in the power grid input end and generating a driving signal according to the voltage among the first phase, the second phase and the third phase in the power grid input end.
Optionally, the rectifier module includes a silicon controlled rectifier bridge circuit, and the silicon controlled rectifier bridge circuit is connected to the input end of the power grid; wherein,
the silicon controlled rectifier bridge circuit is used for receiving the three-phase alternating current input by the power grid input end and rectifying the three-phase alternating current to output direct current;
the silicon controlled rectifier bridge circuit is also used for receiving a driving signal of the driving module and controlling the direct current output according to the driving signal.
Optionally, the rectifier module further includes a dc bus circuit, and an input end of the dc bus circuit is connected to an output end of the silicon controlled rectifier bridge circuit; wherein,
the direct current bus circuit is used for receiving the direct current output by the silicon controlled rectifier bridge circuit and converting the direct current into a direct current voltage value;
the direct current bus circuit is also used for storing the direct current voltage value.
Optionally, the silicon controlled rectifier bridge circuit includes a first rectifier bridge, a second rectifier bridge, and a third rectifier bridge; wherein,
the first rectifier bridge is connected with a first phase of the three-phase alternating-current power supply, the first rectifier bridge is connected with the second rectifier bridge, the second rectifier bridge is connected with a second phase of the three-phase alternating-current power supply, the second rectifier bridge is connected with the third rectifier bridge, the third rectifier bridge is connected with a third phase of the three-phase alternating-current power supply, and the third rectifier bridge is connected with the driving module.
Optionally, the first rectifier bridge includes a first thyristor and a first diode, the second rectifier bridge includes a second thyristor and a second diode, and the third rectifier bridge includes a third thyristor and a third diode; wherein,
the anode of the first controllable silicon is connected with the cathode of the first diode, the anode of the first controllable silicon is connected with the first phase of the three-phase alternating-current power supply, the cathode of the first controllable silicon is connected with the second rectifier bridge, and the anode of the first diode is connected with the second rectifier bridge;
the anode of the second controllable silicon is connected with the cathode of the second diode, the anode of the second controllable silicon is connected with the second phase of the three-phase alternating-current power supply, the cathode of the second controllable silicon is connected with the third rectifier bridge, and the anode of the second diode is connected with the third rectifier bridge;
the anode of the third controllable silicon is connected with the cathode of the third diode, the anode of the third controllable silicon is connected with the third phase of the three-phase alternating-current power supply, the cathode of the third controllable silicon is connected with the direct-current bus circuit, and the anode of the third diode is connected with the direct-current bus circuit.
Optionally, the dc bus circuit comprises a charging capacitor; wherein,
and the first end of the charging capacitor is connected with the cathode of the third controllable silicon, and the second end of the charging capacitor is connected with the anode of the third diode.
Optionally, the driving module is any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit.
Furthermore, in order to achieve the above object, the present invention further provides a silicon controlled rectifier device, which includes the silicon controlled rectifier circuit as described above.
The utility model provides a silicon controlled rectifier circuit, silicon controlled rectifier circuit includes: the control module is respectively connected with the rectifying module and the driving module, the rectifying module and the control module are both connected with a power grid input end, the rectifying module comprises at least one silicon-controlled rectifier tube, the first end of each silicon-controlled rectifier tube is connected with the driving module, the second end of each silicon-controlled rectifier tube is connected with the power grid input end, the third end of each silicon-controlled rectifier tube is connected with a bus, and the grounding ends of the control module and the driving module are connected with the bus, wherein the control module is used for collecting the voltage between the second end and the third end of each silicon-controlled rectifier tube in the rectifying module and generating a driving signal according to the voltage between the second end and the third end of each silicon-controlled rectifier tube; and/or the control module is used for acquiring the voltage of the input end of the power grid and generating a driving signal according to the voltage of the input end of the power grid; the control module is further used for transmitting the driving signal to the driving module; and the driving module is used for receiving the driving signal and controlling each silicon controlled rectifier tube according to the driving signal. The utility model discloses in, use control module control rectifier module to send out the ripples and phase shift angle triggers need not go up electric resistance slowly, set up control module and drive module's earthing terminal on the bus, when using the electric wire netting input voltage that the high resistance keeps apart the mode and gather the power, can not bring the leakage current to the secondary side, drive module's earthing terminal need not keep apart with rectifier module's control end simultaneously, reduces cost and time delay and prevents to take place the leakage current.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a functional block diagram of an embodiment of a silicon controlled rectifier circuit according to the present invention;
fig. 2 is a circuit structure diagram of an embodiment of the scr circuit of the present invention.
The reference numbers illustrate:
the objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit ly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The utility model provides a silicon controlled rectifier circuit.
Referring to fig. 1, in the embodiment of the present invention, the silicon controlled rectifier circuit includes: rectifier module 100, control module 200 and driver module 300, control module 200 respectively with rectifier module 100 with driver module 300 is connected, rectifier module 100 with control module 200 all is connected with the electric wire netting input, rectifier module 100 includes at least one silicon controlled rectifier tube, each the first end of silicon controlled rectifier tube with driver module 300 is connected, each the second end of silicon controlled rectifier tube with the electric wire netting input is connected, each the third end of silicon controlled rectifier tube is connected with the generating line, just control module 200 with driver module 300's earthing terminal with the generating line is connected, wherein,
the control module 200 is configured to collect a voltage between the second end and the third end of each scr in the rectifier module 100, and generate a driving signal according to the voltage between the second end and the third end of each scr; and/or the control module 200 is configured to collect a voltage at the input end of the power grid, and generate a driving signal according to the voltage at the input end of the power grid. In this embodiment, the control module 200 may be an MCU processor or other type of processor, which is not limited in this embodiment, for example, the rectifier module 100 may include a silicon controlled rectifier bridge circuit, and the silicon controlled rectifier bridge circuit is controlled to generate a wave by detecting a voltage across a silicon controlled rectifier of the silicon controlled rectifier bridge circuit through the MCU processor. The ground terminals of the control module 200 and the driving module 300 are connected to a bus, the ground terminals are signal grounds, and the bus is a positive voltage of the bus.
It will be appreciated that the control module 200 may be an MCU processor or other type of processor, and the rectifier module 100 may include a silicon controlled rectifier bridge circuit, for example, the power source may be a three-phase ac power source, and the silicon controlled rectifier bridge circuit is controlled to generate a wave by the MCU processor in such a way that the MCU processor detects the grid input voltage of the three-phase ac power source input.
It should be noted that, in this embodiment, the specific way in which the MCU processor controls the rectification module 100 to emit the wave may be to control the rectification module 100 to emit the wave by acquiring the voltage at the input end of the power grid, or to control the rectification module 100 to emit the wave by detecting the voltage between the second end and the third end of each scr in the rectification module 100, which is not limited in this embodiment.
It will be readily appreciated that, with continued reference to fig. 1, the control module 200 may include a control unit 201 and a conditioning unit 202, the conditioning being to amplify, buffer or scale an analog signal or the like to be suitable for input to an analog-to-digital converter, the analog-to-digital converter digitizing the analog signal and sending the digital signal to the MCU processor or other processor in the control unit 201, or the conditioning unit 202 may send the analog signal directly to the MCU processor or other processor in the control unit 201 for data processing by the MCU processor or other processor. In this embodiment, the conditioning unit 202 may perform signal processing on the collected voltage between the second end and the third end of each scr or the collected voltage at the input end of the power grid. For example, filtering the voltage between the second end and the third end of each scr or the voltage at the input end of the power grid, boosting the voltage at the two ends of each scr, etc., the specific structure of the conditioning circuit and the signal processing method of the conditioning unit 202 are not limited in this embodiment.
The control module 200 is further configured to transmit the driving signal to the driving module 300. In this embodiment, the control module 200 transmits the driving signal to the driving module 300, and the driving module 300 controls the output voltage of the rectifying module 100 according to the driving signal, wherein the driving module 300 may be any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit, and the driving module 300 may also be other types of driving circuits, which is not limited in this embodiment.
It should be noted that, the control module 200 transmits the driving signal to the driving module 300, the rectifier module 100 may include a silicon controlled rectifier bridge circuit, the silicon controlled rectifier bridge circuit may include a plurality of thyristors, and the control module 200 may further control the thyristors in the silicon controlled rectifier bridge circuit to switch in a phase shift angle manner, so that the power-on buffer circuit may be omitted, and the cost is reduced.
The driving module 300 is configured to receive the driving signal and control each of the silicon controlled rectifiers according to the driving signal. In this embodiment, the driving module 300 is connected to the control terminal of the rectifying module 100, and the driving module 300 receives the driving signal and controls the output voltage of the rectifying module 100 through the control terminal of the rectifying module 100 according to the driving signal. The rectifying module 100 includes at least one silicon controlled rectifier, which may be a thyristor, and the driving signal may directly control the thyristor, thereby controlling the output voltage of the thyristor.
It is easy to understand that the rectifier module 100 may further include a dc bus circuit, an input terminal of the dc bus circuit is connected to an output terminal of the scr circuit, the dc bus circuit may include a charging capacitor, and the dc bus circuit receives the dc power output by the scr circuit, converts the dc power into a dc voltage value, and stores the dc voltage value through the charging capacitor.
The embodiment provides a silicon controlled rectifier circuit, which includes: a rectifier module 100, a control module 200 and a driving module 300, wherein the control module 200 is respectively connected with the rectifier module 100 and the driving module 300, the rectification module 100 and the control module 200 are both connected to the input end of the power grid, the rectification module 100 includes at least one silicon controlled rectifier, the first end of each silicon controlled rectifier is connected to the driving module 300, the second end of each silicon controlled rectifier is connected to the input end of the power grid, the third end of each silicon controlled rectifier is connected to the bus, and the ground terminals of the control module 200 and the driving module 300 are connected to the bus bar, wherein, the control module 200 is configured to collect a voltage between the second terminal and the third terminal of each scr in the rectifier module 100, generating a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube; and/or the control module 200 is configured to collect a voltage at the input end of the power grid, and generate a driving signal according to the voltage at the input end of the power grid; the control module 200 is further configured to transmit the driving signal to the driving module 300; the driving module 300 is configured to receive the driving signal and control each of the silicon controlled rectifiers according to the driving signal. In this embodiment, the control module is used to control the wave generation and phase shift angle triggering of the rectifier module without powering on the snubber resistor, the grounding ends of the control module and the driving module are arranged on the bus, when the high-resistance isolation mode is used to collect the power grid input voltage of the power supply, no leakage current is brought to the secondary side, and meanwhile, the grounding end of the driving module is not required to be isolated from the control end of the rectifier module, so that the cost and the time delay are reduced, and the leakage current is prevented.
Further, referring to fig. 2, a first end of each of the silicon controlled rectifiers is a control end, a second end of each of the silicon controlled rectifiers is an anode, and a third end of each of the silicon controlled rectifiers is a cathode.
It should be noted that the rectifier module 100 includes at least one silicon controlled rectifier, and this embodiment is described with three silicon controlled rectifiers, the rectifier module 100 includes three silicon controlled rectifiers, that is, a first silicon controlled rectifier SCR1, a second silicon controlled rectifier SCR2 and a third silicon controlled rectifier SCR3, each of the first ends of the silicon controlled rectifiers is connected to the driver module 300, each of the second ends of the silicon controlled rectifiers is connected to the power grid input end, each of the third ends of the silicon controlled rectifiers is connected to the bus P, and the ground terminals of the controller module 200 and the driver module 300 are connected to the bus.
Further, referring to fig. 2, the control module 200 is further configured to collect voltages between the second ends of the silicon controlled rectifiers in the rectifier module 100 and the bus, and generate a driving signal according to the voltages between the second ends of the silicon controlled rectifiers and the bus;
and/or the control module 200 is configured to collect voltages between the first phase, the second phase, and the third phase in the power grid input end, and generate a driving signal according to the voltages between the first phase, the second phase, and the third phase in the power grid input end.
It should be noted that, the control module 200 collects voltages between the second ends of the silicon controlled rectifiers in the rectifier module 100 and the bus P, and generates a driving signal according to the voltages between the second ends of the silicon controlled rectifiers and the bus P, that is, generates the driving signal by detecting the voltages between the first phase R, the second phase S, the third phase T and the bus P.
It is easy to understand that, the control module 200 collects voltages between the first phase, the second phase and the third phase in the power grid input end, and generates the driving signal according to the voltages between the first phase, the second phase and the third phase in the power grid input end, that is, the driving signal is generated by detecting the voltages between the first phase R, the second phase S and the third phase T of the three-phase alternating-current power supply input at the power grid input end.
Further, referring to fig. 2, the rectifier module 100 includes a silicon controlled rectifier bridge circuit 101, where the silicon controlled rectifier bridge circuit 101 is connected to a power grid input terminal; wherein,
the silicon controlled rectifier bridge circuit 101 is configured to receive a three-phase alternating current input by the power grid input end, and rectify the three-phase alternating current to output a direct current;
the silicon controlled rectifier bridge circuit 101 is further configured to receive a driving signal of the driving module 300, and control the direct current output according to the driving signal.
It should be noted that the control module 200 may include a control unit 201 and a conditioning unit 202, the conditioning unit 202 is connected to the driving module 300, and ground ends GND of the control unit 201, the conditioning unit 202, the control module 200, and the driving module 300 are all connected to a bus P, where the ground ends GND of the control module 200 and the driving module 300 are connected to the bus P, the ground end GND is a signal ground, and the bus P is a positive voltage of the bus.
In this embodiment, the silicon controlled rectifier circuit may be a semi-controlled silicon controlled rectifier circuit, wherein the power supply may be a three-phase power supplyAccording to the technical scheme, the three-phase alternating current power supply is characterized in that an alternating current power supply and a silicon controlled rectifier bridge circuit 101 are connected with the three-phase alternating current power supply, the silicon controlled rectifier bridge circuit 101 can comprise a plurality of controllable silicon, and the silicon controlled rectifier bridge circuit 101 is controlled to emit waves in a mode that an MCU (microprogrammed control unit) processor detects power grid input voltage input by the three-phase alternating current power supply. I.e. the mains input voltage will be connected to the three-phase connector and rectified by the scr bridge circuit 101 to provide a dc voltage U to the scr intermediate dc voltage circuitdc+、UdcThe scr circuit 101 receives three-phase ac power and rectifies the three-phase ac power into dc power for output.
It is easy to understand that the driving module 300 is connected to the control terminal of the rectifying module 100, and the scr circuit 101 receives the driving signal of the driving module 300 and controls the dc output according to the driving signal.
Further, with continued reference to fig. 2, the rectifier module 100 further includes a dc bus circuit 102, wherein an input terminal of the dc bus circuit 102 is connected to an output terminal of the scr circuit 101; wherein,
the dc bus circuit 102 is configured to receive the dc power output by the scr circuit 101, and convert the dc power into a dc voltage value;
the dc bus circuit 102 is further configured to store the dc voltage value.
It should be noted that the rectifier module 100 may further include a dc bus circuit 102, an input end of the dc bus circuit 102 is connected to an output end of the scr bridge circuit 101, the dc bus circuit 102 may include a charging capacitor C, and the dc bus circuit 102 receives the dc power output by the scr bridge circuit 101, converts the dc power into a dc voltage value, and stores the dc voltage value through the charging capacitor C.
It is easy to understand that the dc bus circuit 102 may include one or more charging capacitors C, and the charging capacitors C may be connected in parallel with the scr bridge circuit 101, or connected in series with the scr bridge circuit 101, which is not limited in this embodiment.
Further, with continued reference to fig. 2, the scr circuit 101 includes a first rectifier bridge 1011, a second rectifier bridge 1012, and a third rectifier bridge 1013; wherein,
the first rectifier bridge 1011 is connected to the first phase R of the three-phase ac power supply, the first rectifier bridge 1011 is connected to the second rectifier bridge 1012, the second rectifier bridge 1012 is connected to the second phase S of the three-phase ac power supply, the second rectifier bridge 1012 is connected to the third rectifier bridge 1013, the third rectifier bridge 1013 is connected to the third phase T of the three-phase ac power supply, and the third rectifier bridge 1013 is connected to the drive module 300.
It should be noted that, when the MCU processor is used to perform software wave sending, the silicon controlled rectifier bridge circuit is controlled to send waves by the way that the MCU processor detects the grid input voltage of the three-phase ac power input, and the detection of the grid input voltage of the three-phase ac power input requires at least 4 series of resistor strings connected to the grid, which has a large occupied area and high cost, in this embodiment, the grounding ends of the control module and the driving module are disposed on the bus, and when the grid input voltage of the power is collected by using a high-impedance isolation manner, no leakage current is caused to the secondary side, and meanwhile, the grounding end of the driving module does not need to be isolated from the control end of the rectifier module, which reduces the cost and time delay, in this embodiment, only 3 series of resistor strings are needed to be connected to the grid, that is, the silicon controlled rectifier bridge circuit 101 may include a first rectifier bridge 1011, a second rectifier bridge and a third rectifier bridge 1013, wherein the first rectifier bridge 1011 is connected to the first phase R of the three-phase ac power supply, the second rectifier bridge 1012 is connected to the second phase S of the three-phase ac power supply, and the third rectifier bridge 1013 is connected to the third phase T of the three-phase ac power supply.
Further, with continued reference to fig. 2, the first rectifier bridge 1011 includes a first silicon controlled SCR1 and a first diode D1; wherein,
an anode of the first SCR1 is connected to a cathode of the first diode D1, an anode of the first SCR1 is connected to the first phase R of the three-phase ac power supply, a cathode of the first SCR1 is connected to the second rectifier bridge 1012, and an anode of the first diode D1 is connected to the second rectifier bridge 1012.
It should be noted that the thyristor is a thyristor, and the characteristics of the thyristor are as follows: the thyristor voltage, when forward biased, may be turned on to a conductive state by providing a gate current to the gate. However, conventional thyristors cannot be cut off from the gate, but remain conductive as long as there is current through the thyristor. When thyristors are used in rectifiers of frequency converters, the thyristors need to be driven to produce the desired intermediate circuit dc voltage.
Specifically, the first rectifying bridge 1011 may include a first silicon controlled SCR1 and a first diode D1, the first silicon controlled SCR1 and the first diode D1 forming a series connected pair in which a cathode of the first diode D1 is connected to an anode of the first silicon controlled SCR1, the rectified voltage UdcFormed between the cathode of the first silicon controlled SCR1 and the anode of the first diode D1.
Further, with continued reference to fig. 2, the second rectifier bridge 1012 includes a second silicon controlled SCR2 and a second diode D2; wherein,
an anode of the second SCR2 is connected to a cathode of the second diode D2, an anode of the second SCR2 is connected to the second phase S of the three-phase ac power supply, a cathode of the second SCR2 is connected to the third rectifier bridge 1013, and an anode of the second diode D2 is connected to the third rectifier bridge 1013.
It should be noted that the second rectifier bridge 1012 includes a second SCR2 and a second diode D2, and the second SCR2 and the second diode D2 form a series connection pair, in which the cathode of the second diode D2 is connected to the anode of the second SCR2, and the rectified voltage U is rectifieddcFormed between the cathode of the second silicon controlled SCR2 and the anode of the second diode D2.
Further, with continued reference to fig. 2, the third rectifier bridge 1013 includes a third silicon controlled SCR3 and a third diode D3; wherein,
an anode of the third SCR3 is connected to a cathode of the third diode D3, an anode of the third SCR3 is connected to the third phase T of the three-phase ac power source, a cathode of the third SCR3 is connected to the dc bus circuit 102, and an anode of the third diode D3 is connected to the dc bus circuit 102.
It should be noted that the third rectifier bridge 1013 includes a third SCR3 and a third diode D3, and the third SCR3 and the third diode D3 form a series connection pair, in which the cathode of the third diode D3 is connected to the anode of the third SCR3, and the rectified voltage U is rectifieddcFormed between the cathode of the third silicon controlled SCR3 and the anode of the third diode D3.
It is easily understood that, with continued reference to fig. 2, the control electrode of the third SCR3 is connected to the driving module 300, and the SCR circuit 101 receives the driving signal of the driving module 300 and controls the dc power output according to the driving signal.
It should be noted that the control module 200 transmits the driving signal to the driving module 300, the control electrode of the third SCR3 is connected to the driving module 300, and the control module 200 can also control the thyristors in the SCR bridge circuit 101 to switch in a phase shift angle manner, so that the power-on buffer circuit can be omitted, and the cost can be reduced.
Further, with continued reference to fig. 2, the dc bus circuit 102 includes a charging capacitor C; wherein,
the first end of the charging capacitor C is connected with the cathode of the third SCR3, and the second end of the charging capacitor C is connected with the anode of the third diode D3.
It should be noted that the rectifier module 100 may further include a dc bus circuit 102, an input end of the dc bus circuit 102 is connected to an output end of the scr bridge circuit 101, the dc bus circuit 102 may include a charging capacitor C, and the dc bus circuit 102 receives the dc power output by the scr bridge circuit 101, converts the dc power into a dc voltage value, and stores the dc voltage value through the charging capacitor C.
Further, the driving module 300 is any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit.
It should be noted that the push-pull circuit is an output circuit connected between two transistors with different polarities, the push-pull circuit may employ two power transistors or MOS transistors with the same parameters, and exist in the circuit in a push-pull manner, and each of the two power transistors is responsible for waveform amplification tasks of positive and negative half cycles. The output of the push-pull circuit can not only pour current into the load, but also draw current from the load, and the push-pull circuit can comprise a push-pull triode circuit, a push-pull MOS (metal oxide semiconductor) tube circuit and the like.
Specifically, the control module 200 transmits the driving signal to the driving module 300, and the driving module 300 controls the output voltage of the rectifying module 100 according to the driving signal, wherein the driving module 300 may be any one of a push-pull triode circuit, a push-pull MOS transistor circuit, and a constant current source circuit, and the driving module 300 may also be other types of driving circuits, which is not limited in this embodiment.
In order to achieve the above object, the present invention further provides a silicon controlled rectifier device, which comprises the silicon controlled rectifier circuit. The specific structure of the silicon-controlled rectifier circuit refers to the above embodiments, and since the silicon-controlled rectifier device adopts all the technical solutions of all the above embodiments, all the beneficial effects brought by the technical solutions of the above embodiments are at least achieved, and are not repeated here.
The above only is the preferred embodiment of the present invention, not so limiting the patent scope of the present invention, all under the concept of the present invention, the equivalent structure transformation made by the contents of the specification and the drawings is utilized, or the direct/indirect application is included in other related technical fields in the patent protection scope of the present invention.
Claims (10)
1. A silicon controlled rectifier circuit, comprising: a rectifier module, a control module and a drive module, wherein the control module is respectively connected with the rectifier module and the drive module, the rectifier module and the control module are both connected with the input end of the power grid, the rectifier module comprises at least one silicon controlled rectifier tube, the first end of each silicon controlled rectifier tube is connected with the drive module, the second end of each silicon controlled rectifier tube is connected with the input end of the power grid, the third end of each silicon controlled rectifier tube is connected with the bus, and the grounding ends of the control module and the drive module are connected with the bus, wherein,
the control module is used for acquiring voltage between the second end and the third end of each silicon controlled rectifier tube in the rectifier module and generating a driving signal according to the voltage between the second end and the third end of each silicon controlled rectifier tube; and/or the control module is used for acquiring the voltage of the input end of the power grid and generating a driving signal according to the voltage of the input end of the power grid;
the control module is further used for transmitting the driving signal to the driving module;
and the driving module is used for receiving the driving signal and controlling each silicon controlled rectifier tube according to the driving signal.
2. The SCR circuit of claim 1 wherein the first terminal of each SCR is a control terminal, the second terminal of each SCR is an anode, and the third terminal of each SCR is a cathode.
3. The SCR circuit of claim 1, wherein the control module is further configured to collect a voltage between the second end of each SCR in the rectifying module and the bus, and generate a driving signal according to the voltage between the second end of each SCR and the bus;
and/or the control module is used for acquiring the voltage among the first phase, the second phase and the third phase in the power grid input end and generating a driving signal according to the voltage among the first phase, the second phase and the third phase in the power grid input end.
4. The silicon controlled rectifier circuit of claim 1 wherein the rectifier module comprises a silicon controlled rectifier bridge circuit, the silicon controlled rectifier bridge circuit being connected to the grid input; wherein,
the silicon controlled rectifier bridge circuit is used for receiving the three-phase alternating current input by the power grid input end and rectifying the three-phase alternating current to output direct current;
the silicon controlled rectifier bridge circuit is also used for receiving a driving signal of the driving module and controlling the direct current output according to the driving signal.
5. The silicon controlled rectifier circuit of claim 4 wherein the rectifier module further comprises a DC bus circuit, an input terminal of the DC bus circuit being connected to an output terminal of the silicon controlled rectifier bridge circuit; wherein,
the direct current bus circuit is used for receiving the direct current output by the silicon controlled rectifier bridge circuit and converting the direct current into a direct current voltage value;
the direct current bus circuit is also used for storing the direct current voltage value.
6. The silicon controlled rectifier circuit of claim 4 wherein the silicon controlled rectifier bridge circuit comprises a first rectifier bridge, a second rectifier bridge, and a third rectifier bridge; wherein,
the first rectifier bridge is connected with a first phase of the three-phase alternating-current power supply, the first rectifier bridge is connected with the second rectifier bridge, the second rectifier bridge is connected with a second phase of the three-phase alternating-current power supply, the second rectifier bridge is connected with the third rectifier bridge, the third rectifier bridge is connected with a third phase of the three-phase alternating-current power supply, and the third rectifier bridge is connected with the driving module.
7. The silicon controlled rectifier circuit of claim 6 wherein the first rectifier bridge comprises a first silicon controlled rectifier and a first diode, the second rectifier bridge comprises a second silicon controlled rectifier and a second diode, and the third rectifier bridge comprises a third silicon controlled rectifier and a third diode; wherein,
the anode of the first controllable silicon is connected with the cathode of the first diode, the anode of the first controllable silicon is connected with the first phase of the three-phase alternating-current power supply, the cathode of the first controllable silicon is connected with the second rectifier bridge, and the anode of the first diode is connected with the second rectifier bridge;
the anode of the second controllable silicon is connected with the cathode of the second diode, the anode of the second controllable silicon is connected with the second phase of the three-phase alternating-current power supply, the cathode of the second controllable silicon is connected with the third rectifier bridge, and the anode of the second diode is connected with the third rectifier bridge;
the anode of the third controllable silicon is connected with the cathode of the third diode, the anode of the third controllable silicon is connected with the third phase of the three-phase alternating-current power supply, the cathode of the third controllable silicon is connected with the direct-current bus circuit, and the anode of the third diode is connected with the direct-current bus circuit.
8. The silicon controlled rectifier circuit of claim 7 wherein the dc bus circuit includes a charging capacitor; wherein,
and the first end of the charging capacitor is connected with the cathode of the third controllable silicon, and the second end of the charging capacitor is connected with the anode of the third diode.
9. The silicon controlled rectifier circuit according to any one of claims 1 to 8, wherein the driving module is any one of a push-pull triode circuit, a push-pull MOS (metal oxide semiconductor) transistor circuit and a constant current source circuit.
10. A scr device comprising the scr circuit as defined in any one of claims 1 to 9.
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|---|---|---|---|
| CN202022680528.1U CN214069828U (en) | 2020-11-18 | 2020-11-18 | Silicon controlled rectifier circuit and device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022680528.1U CN214069828U (en) | 2020-11-18 | 2020-11-18 | Silicon controlled rectifier circuit and device |
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