CN214043675U - Electrostatic lattice capable of avoiding non-adiabatic transition - Google Patents
Electrostatic lattice capable of avoiding non-adiabatic transition Download PDFInfo
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- CN214043675U CN214043675U CN202120383908.0U CN202120383908U CN214043675U CN 214043675 U CN214043675 U CN 214043675U CN 202120383908 U CN202120383908 U CN 202120383908U CN 214043675 U CN214043675 U CN 214043675U
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Abstract
The utility model discloses an electrostatic lattice which can avoid non-adiabatic transition, relating to the relevant field of chips; the electrostatic crystal lattice comprises a plurality of micro-wells, wherein the micro-wells are arrayed and copied along the longitudinal direction and the radial direction, each micro-well consists of an arc electrode and an annular electrode, the arc electrodes are arranged in the annular electrodes, two adjacent annular electrodes are connected through a connecting port, a crack is formed in each arc electrode, and the circle center of each arc electrode is the center of the well; the electrostatic lattice structure arranged in the utility model can avoid the escape of molecules in the trap due to non-adiabatic transition, does not need to add an external magnetic field, and is generally applicable to all weak field search state cold polar molecules; the electrostatic lattice solves the problems that in the existing electrostatic lattice scheme, the field intensity of the trap center of each micro-trap is 0, the escape of molecules in the trap caused by non-adiabatic transition cannot be avoided, and the problem can be solved only for individual molecules even if an external magnetic field is added, so that the applicability is not high.
Description
Technical Field
The utility model relates to a chip field of relevance specifically is an electrostatic lattice that can avoid non-adiabatic transition.
Background
The electrostatic lattice is formed by etching a metal electrode (such as gold) with the size of micron on the surface of a medium (such as glass) to form a one-dimensional or two-dimensional electrostatic micro-trap array, so that cold polar molecules can be trapped on the surface of the medium.
Non-adiabatic transition is when a molecule is trapped in an electrostatic trap, and if the molecule transitions from a cagable quantum state to a non-cagable quantum state, the molecule will escape from the electrostatic trap.
By constructing a miniaturized electrode structure on a chip, a strong electric field gradient can be formed at a very low voltage, and the miniaturized electrode structure can be used for precisely controlling polar molecules, also called a molecular chip. It has a wide range of potential applications: the super-cold polar molecule can be used for quantum computation as a quantum bit; the molecular chip can be used for researching cold collision and cold chemistry on the surface and researching the vibration and rotation heating phenomena of the chip to molecules; can be used for researching molecular excited state life, matter wave interference and the like.
In the existing electrostatic lattice scheme, the field intensity of the trap center of each micro-trap is 0, and the escape of molecules in the trap caused by non-adiabatic transition cannot be avoided. Even if an external magnetic field is applied, the problem can be solved only for individual molecules, and the applicability is not high.
SUMMERY OF THE UTILITY MODEL
An object of the present invention is to provide an electrostatic crystal lattice capable of avoiding non-adiabatic transition to solve the problems in the background art.
In order to achieve the above object, the utility model provides a following technical scheme:
an electrostatic lattice that avoids non-adiabatic transitions; the micro-trap is characterized by comprising a plurality of micro-traps, wherein the micro-traps are arrayed and copied along the longitudinal direction and the radial direction, each micro-trap consists of an arc electrode and an annular electrode, the arc electrodes are arranged in the annular electrodes, every two adjacent annular electrodes are connected through a connecting port, a crack is formed in each arc electrode, and the center of the arc electrode is the center of the trap.
As a further aspect of the present invention: the arc-shaped electrode and the annular electrode are made of gold.
As a further aspect of the present invention: the arc electrode and the annular electrode are constructed on the surface of the dielectric layer.
As a further aspect of the present invention: the dielectric layer is made of glass.
Compared with the prior art, the beneficial effects of the utility model are that:
the electrostatic lattice structure arranged in the utility model can avoid the escape of molecules in the trap due to non-adiabatic transition, does not need to add an external magnetic field, and is generally applicable to all weak field search state cold polar molecules; the electrostatic lattice solves the problems that in the existing electrostatic lattice scheme, the field intensity of the trap center of each micro-trap is 0, the escape of molecules in the trap caused by non-adiabatic transition cannot be avoided, and the problem can be solved only for individual molecules even if an external magnetic field is added, so that the applicability is not high.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of the electrostatic lattice according to the present invention.
FIG. 3 is a one-dimensional electric field distribution diagram when loading molecules.
FIG. 4 is a graph of the one-dimensional electric field profile for caged molecules.
Notations for reference numerals: ring electrode 1, arc electrode 2, crack 202, connector 101.
Detailed Description
The present invention will be described in detail with reference to the following embodiments, wherein like or similar elements are designated by like reference numerals throughout the drawings or description, and wherein the shape, thickness or height of the various elements may be expanded or reduced in practical applications. The embodiments of the present invention are provided only for illustration, and not for limiting the scope of the present invention. Any obvious and obvious modifications or alterations to the present invention can be made without departing from the spirit and scope of the present invention.
Referring to fig. 1-2, in one embodiment of the present invention, an electrostatic lattice capable of avoiding non-adiabatic transition; the micro-trap is characterized by comprising a plurality of micro-traps, wherein the micro-traps are arrayed and copied along the longitudinal direction and the radial direction, each micro-trap consists of an arc electrode 2 and an annular electrode 1, the arc electrodes 2 are arranged in the annular electrodes 1, every two adjacent annular electrodes 1 are connected through a connecting port 101, a crack 202 is formed in each arc electrode 2, the circle center of each arc electrode 2 is a trap center, and the period is 0.11 mm.
In the present embodiment, the arc electrode 2 and the ring electrode 1 are made of gold.
In another embodiment of the present invention, the arc electrode 2 and the ring electrode 1 are formed on the surface of the dielectric layer.
In this embodiment, the dielectric layer is glass.
Principle of electrostatic lattice: by constructing a micro-well with a micro size on the surface of the chip and adjusting the voltage of the electrode, a region with the weakest electric field intensity, namely a three-dimensional closed well, is formed on the surface of the chip. For cold polar molecules in the weak field search state, they receive the dipole gradient force of the non-uniform electric field, so that the molecules are bound in the electrostatic trap. By replicating individual micro-wells in both the longitudinal and radial directions, an electrostatic lattice as shown in fig. 2 can be obtained.
The working environment is as follows: the scheme relates to a molecular beam experiment, so the experiment needs to be carried out in a stainless steel vacuum chamber, the air pressure needs to reach more than 10-6Pa, and a mechanical pump, a molecular pump and an ion pump are needed to obtain high vacuum. And a high voltage power supply is required to provide a high voltage, and a high voltage electrode is used to transmit the high voltage of the power supply to the arc electrode. Since the molecular beam is loaded into the electrostatic trap, a high voltage switch is also required to accomplish the fast switching of the electrode voltage. The molecules in the detection trap also need to be detected by a laser, and the detection method adopts laser-induced fluorescence or resonance enhanced multi-photon ionization technology.
Loading of molecular Beam the beam was loaded in the negative z-axis direction as shown in FIG. 3, first requiring ultrasonic splitting of the pulse valve ejection by means of an electrostatic "Stark decelerator" as shown inBeam line (Xe can be used as carrier gas, ND)3As seed gas) from about 300m/s to about 15 m/s. Since the velocity is close to 0 when the molecules reach the vicinity of the central position of the trap, a potential barrier needs to be created, so that the kinetic energy of the molecules is reduced continuously in the process of climbing. The electrode voltage can be set by (U)1=100V, U2=170V, U3= 30V) to accomplish further deceleration of the molecular beam.
Forming an electrostatic trap with a trap central field strength of 0, when the molecules move to the center of the potential well as shown in FIG. 4 and the speed is close to 0, adjusting the voltage of the electrodes, for example, setting the voltage to U1=500V, U2=170V, U3=30V, so that the molecules can be trapped in the electrostatic trap. At this time, the field strength at the center of the potential well is not 0, and the caged quantum state and the uncaged quantum state of the molecule are not degenerated any more, so that the transition of the molecule from the caged state to the uncaged state is difficult to occur, and the molecule cannot be lost due to the non-adiabatic transition.
The utility model discloses the static lattice structure that sets up can avoid the trap in the molecule because non-adiabatic transition escapes, need not to add external magnetic field, and the cold polarity molecule of state is generally applicable to all weak fields search, and similar constructs a plurality of electrodes on the medium surface, also can realize similar effect through adjusting electrode voltage.
The utility model discloses the standard part that uses all can purchase from the market, and dysmorphism piece all can be customized according to the description with the record of drawing of description, and the concrete connection mode of each part all adopts conventional means such as ripe bolt, rivet, welding among the prior art, and machinery, part and equipment all adopt prior art, and conventional model, including circuit connection adopts conventional connection mode among the prior art, does not detailed here again.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (4)
1. The electrostatic lattice capable of avoiding non-adiabatic transition is characterized by comprising a plurality of micro-wells, wherein the micro-wells are arrayed and copied along the longitudinal direction and the radial direction, each micro-well consists of an arc electrode (2) and an annular electrode (1), the arc electrodes (2) are arranged in the annular electrodes (1), two adjacent annular electrodes (1) are connected through a connecting port (101), a crack (202) is formed in each arc electrode (2), and the center of the arc electrode (2) is the center of the well.
2. An electrostatic lattice avoiding non-adiabatic transitions as claimed in claim 1, characterized in that the arc-shaped electrode (2) and the ring-shaped electrode (1) are made of gold.
3. An electrostatic lattice avoiding non-adiabatic transitions as set forth in claim 1, characterized in that the arc-shaped electrode (2) and the ring-shaped electrode (1) are formed on the surface of the dielectric layer.
4. An electrostatic lattice avoiding non-adiabatic transitions as set forth in claim 3 wherein said dielectric layer is glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120383908.0U CN214043675U (en) | 2021-02-21 | 2021-02-21 | Electrostatic lattice capable of avoiding non-adiabatic transition |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120383908.0U CN214043675U (en) | 2021-02-21 | 2021-02-21 | Electrostatic lattice capable of avoiding non-adiabatic transition |
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| Publication Number | Publication Date |
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| CN214043675U true CN214043675U (en) | 2021-08-24 |
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| CN202120383908.0U Expired - Fee Related CN214043675U (en) | 2021-02-21 | 2021-02-21 | Electrostatic lattice capable of avoiding non-adiabatic transition |
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2021
- 2021-02-21 CN CN202120383908.0U patent/CN214043675U/en not_active Expired - Fee Related
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Granted publication date: 20210824 |
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| CF01 | Termination of patent right due to non-payment of annual fee |