CN214013139U - Ku waveband silicon-based MEMS isolator - Google Patents
Ku waveband silicon-based MEMS isolator Download PDFInfo
- Publication number
- CN214013139U CN214013139U CN202023121554.7U CN202023121554U CN214013139U CN 214013139 U CN214013139 U CN 214013139U CN 202023121554 U CN202023121554 U CN 202023121554U CN 214013139 U CN214013139 U CN 214013139U
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- Prior art keywords
- box
- groove
- sealed
- concave
- protruding
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 38
- 238000007789 sealing Methods 0.000 claims abstract description 45
- 238000009434 installation Methods 0.000 claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims 2
- 238000002955 isolation Methods 0.000 abstract description 10
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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Abstract
The utility model discloses a Ku wave band silicon-based MEMS isolator, including sealed concave half box, sealed concave half box one side fixed mounting has sealed protruding half box, fixed mounting has the isolation main part in sealed concave half box and the sealed protruding half box, fixed mounting has inner structure in the isolation main part, sealed concave half box includes concave half box body, concave box groove, concave box half groove and sealed recess, sealed convex half box includes convex half box body, convex box groove, convex box half groove and sealed lug, it includes ferrite box, seal installation mouth, sealing connection piece, stationary blade, mounting nut and connection solenoid to keep apart the main part, inner structure includes silicon chamber, circuit connector, internally mounted room and transmission mainboard. A silicon-based MEMS isolator of Ku wave band, provide multiple protection, when strengthening its microwave transmission ability, strengthen its heat dispersion, do not influence its isolation simultaneously to its life has been improved.
Description
Technical Field
The utility model relates to an isolator field, in particular to silicon-based MEMS isolator of Ku wave band.
Background
The isolator adopts a linear optical coupling isolation principle to convert and output an input signal, and isolates the input signal, the output signal and a working power supply from each other, is particularly suitable for being matched with equipment instruments needing electric isolation, is also named as a signal isolator, and is an important component in an industrial control system; the existing isolator has certain defects in use, is weak in protection capability, easy to corrode, poor in heat dissipation performance and short in service life, and therefore the Ku waveband silicon-based MEMS isolator is provided.
Disclosure of Invention
A primary object of the present invention is to provide a Ku waveband silicon-based MEMS isolator which can effectively solve the problems of the background art.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the utility model provides a Ku wave band silicon-based MEMS isolator, is including sealed half box, sealed half box one side fixed mounting has sealed protruding half box, fixed mounting has the isolation main part in sealed half box and the sealed protruding half box, fixed mounting has inner structure in the isolation main part.
Preferably, the sealed concave half box comprises a concave half box body, a concave box groove, a concave box half groove and a sealed groove, the concave box groove is formed in the concave half box body, the concave box half groove is fixedly formed in the two sides of the concave box groove, and the sealed groove is formed in the groove opening of the concave box groove.
Preferably, sealed protruding half box includes protruding half box body, protruding box groove, protruding box half groove and sealed lug, protruding box groove has been seted up to protruding half box body inside, protruding box half groove has been seted up to protruding box groove both sides, protruding box notch department fixed welding installs sealed lug.
Preferably, keep apart the main part and include ferrite box, seal installation mouth, sealing connection piece, stationary blade, mounting nut and connection solenoid, the sealing installation mouth has been seted up to ferrite box both sides, the internal fixed mounting of sealing connection has sealing connection piece, sealing connection piece one side fixed mounting has the stationary blade, stationary blade both sides fixed mounting has mounting nut, fixed welding installs the connection solenoid in the middle part of the stationary blade.
Preferably, the inner structure comprises a silicon cavity, a circuit connector, an inner installation chamber and a transmission mainboard, the circuit connector is arranged on two sides of the silicon cavity, the inner installation chamber is arranged inside the silicon cavity, and the transmission mainboard is fixedly welded in the inner installation chamber.
Preferably, one end of the connecting solenoid penetrates through a circular groove formed by closing the concave box half groove and the convex box half groove, and the connecting solenoid penetrates through the sealing connecting block and the silicon cavity to be fixedly welded with the transmission main board.
Compared with the prior art, the utility model discloses following beneficial effect has:
in the utility model, the signal transmission link is connected with the isolator through the connecting solenoid, the transmission mainboard is arranged in the internal installation chamber and is provided with the first heavy protection by the silicon cavity, the ferrite box is wrapped on the periphery of the silicon cavity, the microwave transmission performance is enhanced, simultaneously, the auxiliary heat dissipation effect is achieved, the working performance is further improved, in order to avoid the microwave from interfering other parts due to over-strong interference or interference by other parts, the outer side of the ferrite box is wrapped with a sealed concave box and a sealed convex box, the concave box and the convex box are made of an insulating material, a sealing convex block is embedded into a sealing groove and fixedly connected with a concave box groove and a convex box groove, the concave box and the convex box are surrounded with a connecting screw pipe and fixedly connected, the internal structure is completely isolated from the external environment, the performance is not affected, the internal structure is prevented from being affected by corrosion, interference and the like of external factors, and the service life is prolonged.
Drawings
Fig. 1 is the overall structure schematic diagram of the utility model relates to a Ku wave band silicon-based MEMS isolator.
Figure 2 is the utility model relates to a unsmooth half box body schematic diagram of Ku wave band silicon-based MEMS isolator.
Fig. 3 is a schematic view of an isolation main body of a Ku band silicon-based MEMS isolator according to the present invention.
Fig. 4 is a cross-sectional view of the internal structure of the Ku band silicon-based MEMS isolator of the present invention.
In the figure: 1. sealing the concave half box; 101. a concave half box body; 102. a concave box groove; 103. a concave box half-groove; 104. sealing the groove; 2. sealing the convex half box; 201. a convex half box body; 202. a convex box groove; 203. a convex box half-groove; 204. sealing the bump; 3. an isolation body; 301. a ferrite case; 302. sealing the mounting opening; 303. sealing the connecting block; 304. a fixing sheet; 305. mounting a nut; 306. connecting a solenoid; 4. an internal structure; 401. a silicon cavity; 402. a line connector; 403. an interior installation chamber; 404. and transmitting the mainboard.
Detailed Description
In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand, the present invention is further described below with reference to the following embodiments.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element to which the reference is made must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, and for example, "connected" may be either fixedly connected or detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1-4, a Ku-band silicon-based MEMS isolator includes a sealing concave half-box 1, a sealing convex half-box 2 is fixedly installed at one side of the sealing concave half-box 1, an isolating main body 3 is fixedly installed in the sealing concave half-box 1 and the sealing convex half-box 2, and an internal structure 4 is fixedly installed in the isolating main body 3;
the sealed half concave box 1 comprises a half concave box body 101, a half concave box groove 102, a half concave box groove 103 and a sealing groove 104, wherein the half concave box groove 102 is formed in the half concave box body 101, the half concave box groove 103 is fixedly formed in two sides of the half concave box groove 102, and the sealing groove 104 is formed in the notch of the half concave box groove 102; the sealing convex half box 2 comprises a convex half box body 201, a convex box groove 202, convex box half grooves 203 and sealing lugs 204, the convex box groove 202 is formed in the convex half box body 201, the convex box half grooves 203 are formed in two sides of the convex box groove 202, and the sealing lugs 204 are fixedly welded at the notch of the convex box groove 202; the isolation main body 3 comprises a ferrite box 301, a sealing installation port 302, a sealing connection block 303, a fixing plate 304, an installation nut 305 and a connection solenoid 306, wherein the sealing installation port 302 is formed in two sides of the ferrite box 301, the sealing connection block 303 is fixedly installed in the sealing installation port 302, the fixing plate 304 is fixedly installed on one side of the sealing connection block 303, the installation nut 305 is fixedly installed on two sides of the fixing plate 304, and the connection solenoid 306 is fixedly welded and installed in the middle of the fixing plate 304; the internal structure 4 comprises a silicon cavity 401, a circuit connecting port 402, an internal installation chamber 403 and a transmission main board 404, wherein the circuit connecting port 402 is arranged on two sides of the silicon cavity 401, the internal installation chamber 403 is arranged in the silicon cavity 401, and the transmission main board 404 is fixedly welded and installed in the internal installation chamber 403; one end of the connecting screw pipe 306 penetrates through a ring groove formed by closing the concave box half groove 103 and the convex box half groove 203, and the connecting screw pipe 306 penetrates through the sealing connecting block 303 and the silicon cavity 401 to be fixedly welded with the transmission main board 404.
It should be noted that, the utility model relates to a Ku waveband silicon-based MEMS isolator, when in use, the signal transmission is communicated through the connecting solenoid 306 and is connected with the isolator, the transmission mainboard 404 is installed in the internal installation chamber 403, the first heavy protection is provided by the silicon cavity 401, the ferrite box 301 is wrapped on the periphery of the silicon cavity 401, the microwave transmission performance is enhanced, and simultaneously, the auxiliary heat dissipation effect is achieved, the working performance is further improved, in order to avoid the microwave from interfering other components or being interfered by other components, the sealing concave half box 1 and the sealing convex half box 2 are wrapped on the outer side of the ferrite box 301, the concave half box body 101 and the convex half box body 201 are made of insulating materials, the sealing bump 204 is embedded into the sealing groove 104 and fixedly connected with the concave box groove 102 and the convex box groove 202, the concave box half groove 103 and the convex box half groove 203 are fixedly connected around the connecting solenoid 306, the internal structure 4 is completely isolated from the external environment, the performance is not influenced, meanwhile, the internal structure 4 is prevented from being influenced by external factors such as corrosion and interference, and the service life is prolonged.
The basic principles and the main features of the invention and the advantages of the invention have been shown and described above. It will be understood by those skilled in the art that the present invention is not limited to the above embodiments, and that the foregoing embodiments and descriptions are provided only to illustrate the principles of the present invention without departing from the spirit and scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A Ku waveband silicon-based MEMS isolator is characterized in that: including sealed half box (1), sealed half box (1) one side fixed mounting has sealed protruding half box (2), sealed half box (1) and sealed protruding half box (2) internal fixation install keep apart main part (3), keep apart main part (3) internal fixation and install inner structure (4).
2. The Ku band silicon based MEMS isolator of claim 1, wherein: the sealing half-concave box (1) comprises a half-concave box body (101), a half-concave box groove (102), a half-concave box groove (103) and a sealing groove (104), the half-concave box groove (102) is formed in the half-concave box body (101), the half-concave box groove (103) is fixedly formed in the two sides of the half-concave box groove (102), and the sealing groove (104) is formed in the notch of the half-concave box groove (102).
3. The Ku band silicon based MEMS isolator as claimed in claim 2, wherein: sealed protruding half box (2) are including protruding half box body (201), protruding box groove (202), protruding box half groove (203) and sealed lug (204), protruding box groove (202) have been seted up to protruding half box body (201) inside, protruding box half groove (203) have been seted up to protruding box groove (202) both sides, protruding box groove (202) notch department fixed welding installs sealed lug (204).
4. The Ku band silicon based MEMS isolator of claim 3, wherein: keep apart main part (3) and include ferrite box (301), seal installation mouth (302), sealing connection piece (303), stationary blade (304), construction nut (305) and connect solenoid (306), sealing installation mouth (302) have been seted up to ferrite box (301) both sides, sealing connection piece (303) are installed to sealing connection mouth (302) internal fixation, sealing connection piece (303) one side fixed mounting has stationary blade (304), stationary blade (304) both sides fixed mounting has construction nut (305), stationary blade (304) middle part fixed welding installs connection solenoid (306).
5. The Ku band silicon based MEMS isolator of claim 4, wherein: inner structure (4) include silicon chamber (401), circuit connector (402), internally mounted room (403) and transmission mainboard (404), circuit connector (402) have been seted up to silicon chamber (401) both sides, internally mounted room (403) have been seted up to silicon chamber (401) inside, fixedly welded mounting has transmission mainboard (404) in internally mounted room (403).
6. The Ku band silicon based MEMS isolator of claim 5, wherein: one end of the connecting solenoid (306) penetrates through a circular groove formed by closing the concave box half groove (103) and the convex box half groove (203), and the connecting solenoid (306) penetrates through the sealing connecting block (303) and the silicon cavity (401) to be fixedly welded with the transmission main board (404).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202023121554.7U CN214013139U (en) | 2020-12-22 | 2020-12-22 | Ku waveband silicon-based MEMS isolator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202023121554.7U CN214013139U (en) | 2020-12-22 | 2020-12-22 | Ku waveband silicon-based MEMS isolator |
Publications (1)
Publication Number | Publication Date |
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CN214013139U true CN214013139U (en) | 2021-08-20 |
Family
ID=77289866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202023121554.7U Expired - Fee Related CN214013139U (en) | 2020-12-22 | 2020-12-22 | Ku waveband silicon-based MEMS isolator |
Country Status (1)
Country | Link |
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CN (1) | CN214013139U (en) |
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2020
- 2020-12-22 CN CN202023121554.7U patent/CN214013139U/en not_active Expired - Fee Related
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210820 |