CN213903712U - Bipolar transistor short circuit detection device - Google Patents
Bipolar transistor short circuit detection device Download PDFInfo
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- CN213903712U CN213903712U CN202022501770.8U CN202022501770U CN213903712U CN 213903712 U CN213903712 U CN 213903712U CN 202022501770 U CN202022501770 U CN 202022501770U CN 213903712 U CN213903712 U CN 213903712U
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Abstract
The utility model provides a bipolar transistor short circuit detection device relates to electron device and detects technical field, and wherein device includes: the device comprises a current change rate detection module, a VCE voltage detection module and a detection control module; the detection control module controls the current change rate detection module to be in an enabling state and the VCE voltage detection module to be in a non-enabling state in the process of turning on the bipolar transistor, and the current change rate detection module detects whether short circuit occurs or not; and controlling the VCE voltage detection module to be in an enabling state when the bipolar transistor is in an on state, and detecting whether short circuit occurs through the VCE voltage detection module. The utility model discloses a device can realize the bipolar transistor short circuit at no blind area no dead angle and detect, and the accuracy of detection is high, the good reliability, can guarantee bipolar transistor safe and reliable operation.
Description
Technical Field
The utility model relates to an electron device detects technical field, especially relates to a bipolar transistor short circuit detection device.
Background
The bipolar transistor is a current control device and is widely applied, and the reliability of the bipolar transistor plays an important role in product quality. There are various types of Bipolar transistors, and for example, the Bipolar Transistor is an IGBT (Insulated Gate Bipolar Transistor) or the like. The IGBT can be installed in products such as a frequency converter, the reliable switching-on and switching-off of the IGBT directly influences the safe operation of the products such as the whole frequency converter, and when short circuit occurs, the IGBT needs to be reliably switched off. At present, methods for detecting the short circuit of the IGBT include methods for detecting collector current, detecting gate emitter voltage, detecting collector emitter voltage and the like, the short circuit of the IGBT is divided into two types, one type is direct connection of bridge arms of the IGBT, the other type is short circuit between phases of loads, current IC can be rapidly increased no matter which short circuit occurs, the IGBT can enter a linear area, the collector emitter voltage is about direct-current bus voltage, the loss is sharply increased at the moment, heat is serious, and the IGBT needs to be turned off as soon as possible. When the IGBT is short-circuited, parameters such as current IC, voltage of gate emitter VGE, voltage of collector emitter VCE and the like can be changed remarkably, and the driver can detect short-circuit faults through detection of the parameters. However, the existing short circuit detection method usually has a detection blind area, and is difficult to perform short circuit detection in the turn-on process and the turn-on state of the IGBT, so that the operation reliability of the IGBT is reduced.
SUMMERY OF THE UTILITY MODEL
In view of this, the present invention provides a short circuit detection device for a bipolar transistor, which is capable of detecting a short circuit fault by enabling a current change rate detection module and a VCE voltage detection module in the process of turning on the bipolar transistor and in the on state.
According to a first aspect of the present invention, there is provided a bipolar transistor short circuit detection device, comprising: the current change rate detection module is used for detecting an induced voltage corresponding to parasitic inductance between a power emitter and an auxiliary emitter of the bipolar transistor; the VCE voltage detection module is used for detecting the voltage of a collector and an emitter VCE of the bipolar transistor; the detection control module is respectively electrically connected with the current change rate detection module and the VCE voltage detection module, and is used for controlling the current change rate detection module to be in an enabled state and the VCE voltage detection module to be in a disabled state in the process of turning on the bipolar transistor so as to detect whether the bipolar transistor is short-circuited or not through the current change rate detection module; and under the condition that the bipolar transistor is switched on, controlling the VCE voltage detection module to be in an enabling state so as to detect whether the bipolar transistor is short-circuited or not through the VCE voltage detection module.
Optionally, the method further comprises: the signal generation module is connected with a gate pole of the bipolar transistor and used for sending a driving signal; the detection control module is electrically connected with the signal generation module and used for controlling the signal generation module to stop sending the driving signal when the bipolar transistor is short-circuited.
Optionally, the detection control module includes: a control submodule and an enable submodule; the current change rate detection module is connected to a first reference voltage and the driving signal and used for outputting a first logic signal to the control submodule based on the first reference voltage, the induction voltage and the driving signal; the enabling submodule is connected with the VCE voltage, a second reference voltage and the driving signal, and is used for outputting a second logic signal to the control submodule based on the VCE voltage, the second reference voltage and the driving signal and outputting a third logic signal to the control submodule based on the driving signal; the VCE voltage detection module is connected with a third reference voltage and is used for outputting a fourth logic signal to the control submodule based on the VCE voltage and the third reference voltage; the control sub-module is configured to control whether the current change rate detection module and the VCE voltage detection module are in an enabled state and whether the signal generation module stops sending the driving signal based on the first logic signal, the second logic signal, the third logic signal, and the fourth logic signal.
Optionally, the enabling sub-module comprises: the device comprises an inversion unit, a first comparison unit and a first trigger unit; the input end of the reversing unit is connected with the output end of the signal generating module, is connected with the driving signal, and is used for performing reverse processing on the driving signal so as to generate the third logic signal and output the third logic signal to the control submodule; two input ends of the first comparing unit are respectively connected to the VCE voltage and the second reference voltage, and a first comparison result signal is generated based on a comparison result of the VCE voltage and the second reference voltage; the output end of the inverting unit and the output end of the first comparing unit are respectively connected with two input ends of the first triggering unit, and the first triggering unit generates the second logic signal based on the third logic signal and the first comparison result signal and outputs the second logic signal to the control submodule.
Optionally, the control sub-module includes: the first AND gate unit, the second trigger unit and the OR gate unit; the two input ends of the first and gate unit are respectively connected to the second logic signal and the fourth logic signal, and the second logic signal and the fourth logic signal are subjected to and processing; one input end of the OR gate unit is connected with the output end of the first AND gate unit, and the other input end of the OR gate unit is connected with the first logic signal to OR-process the output signal of the first AND gate unit and the first logic signal; one input end of the second trigger unit is connected with the output end of the OR gate unit, and the other input end of the second trigger unit is connected with the third logic signal; the output end of the second trigger unit is connected with the signal generating module; the second trigger unit is used for generating a control signal for controlling whether the signal generation module sends the driving signal or not based on the output signal of the OR gate unit and the third logic signal and sending the control signal.
Optionally, the current change rate detection module includes: a second AND gate unit and a Di/dt detection unit; the Di/dt detection unit collects the induction voltage and accesses a first reference voltage, and a second comparison result signal is output to the second AND gate unit based on the comparison result of the induction voltage and the first reference voltage; and two input ends of the second and gate unit are respectively connected to the second comparison result signal and the driving signal, and generate the first logic signal based on the result of and processing the second comparison result signal and the driving signal and output the first logic signal to the control submodule.
Optionally, the VCE voltage detection module includes: a second comparing unit; the second comparison unit is used for collecting the VCE voltage, accessing the third reference voltage, generating a fourth logic signal based on a comparison result of the VCE voltage and the third reference voltage, and outputting the fourth logic signal to the control submodule.
Optionally, the signal generating module includes: a signal controller unit and a power amplifying unit; the control submodule is connected with the input end of the signal controller unit and is used for sending a control signal for controlling whether the signal generation module sends the driving signal; the output end of the signal controller unit is connected with the input end of the power amplification unit; and the output end of the power amplification unit outputs the amplified driving signal.
Optionally, the driving signal comprises: a PWM signal.
Optionally, the bipolar transistor comprises: an IGBT.
The utility model discloses a bipolar transistor short circuit detection device, enable the current change rate detection module to detect short circuit fault in the process of bipolar transistor opening, and do not enable VCE voltage detection module; the VCE voltage detection module is enabled to detect short-circuit faults in the state that the bipolar transistor is switched on, the short-circuit detection of the bipolar transistor without a blind area and a dead angle can be realized, the real-time detection can be realized in the switching-on process and the switching-on state of the bipolar transistor, the external interference is small, the detection accuracy is high, the reliability is good, and the safe and reliable operation of the bipolar transistor can be ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without inventive laboriousness.
Fig. 1 is a block schematic diagram of an embodiment of a bipolar transistor short circuit detection arrangement according to the present invention;
fig. 2 is a block schematic diagram of another embodiment of a bipolar transistor short circuit detection arrangement according to the present invention;
fig. 3 is a block schematic diagram of yet another embodiment of a bipolar transistor short detection arrangement according to the present invention;
fig. 4 is a block schematic diagram of yet another embodiment of a bipolar transistor short circuit detection arrangement according to the present invention;
fig. 5 is a schematic control flow diagram of an embodiment of a bipolar transistor short circuit detection apparatus according to the present invention;
fig. 6 is a schematic diagram of the control flow of stopping sending the driving signal according to an embodiment of the short circuit detection device of the bipolar transistor of the present invention;
fig. 7 is a schematic diagram of a detection control flow of an embodiment of the short circuit detection device for a bipolar transistor according to the present invention.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention. The technical solution of the present invention is described in many ways with reference to the drawings and the embodiments.
In the prior art, various methods for detecting the short circuit of the bipolar transistor can be used, for example, Di/dt short circuit detection, collector-emitter VCE voltage detection and the like can be used for detecting the short circuit of the IGBT. Di/dt short circuit detection is that a small parasitic inductance exists between a power emitter and an auxiliary emitter, and when the power emitter and the auxiliary emitter are in on-off and short circuit faults, collector current IC can change remarkably, so induced electromotive force can be generated on the parasitic inductance, and the faults can be detected by detecting signals; the VCE voltage of the collector and the emitter is detected by utilizing the fact that the IGBT retreats from a saturation area to an amplification area during short circuit, the VCE voltage can quickly rise to the bus voltage, but the detection method can not detect the voltage until the IGBT is turned on. The existing short circuit detection method can reduce the reliability of IGBT protection to different degrees and cannot ensure the safe and reliable operation of the IGBT.
The terms "first", "second", and the like are used hereinafter only for descriptive distinction and not for other specific meanings.
As shown in fig. 1, the present invention provides a short circuit detection device for a bipolar transistor, wherein the bipolar transistor 01 can be various, such as an IGBT. The bipolar transistor short circuit detection device comprises a current change rate detection module 10, a VCE voltage detection module 20 and a detection control module 30. The current change rate detection module 10 is used for detecting an induced voltage corresponding to a parasitic inductance between a power emitter and an auxiliary emitter of the bipolar transistor 01, and the VCE voltage detection module 20 is used for detecting a collector-emitter VCE voltage of the bipolar transistor 01.
The detection control module 30 is electrically connected to the current change rate detection module 10 and the VCE voltage detection module 20, respectively, and is configured to control the current change rate detection module 10 to be in an enabled state and the VCE voltage detection module 20 to be in a disabled state during a process of turning on the bipolar transistor 01, and detect whether the bipolar transistor 01 is short-circuited through the current change rate detection module 10. The current change rate detection module 10 being in the enabled state means that the current change rate detection module 10 performs a detection function for detecting the bipolar transistor 01, and the VCE voltage detection module 20 being in the disabled state means that the VCE voltage detection module 20 does not perform a detection function for detecting the bipolar transistor 01.
In the on state of the bipolar transistor, the detection control module 30 controls the VCE voltage detection module 20 to be in an enabled state, so as to detect whether the bipolar transistor 01 is short-circuited through the VCE voltage detection module 20. The VCE voltage detection module 20 is enabled, and the VCE voltage detection module 20 performs a detection function in detecting the bipolar transistor 01.
In one embodiment, as shown in fig. 2, the short circuit detection device of the bipolar transistor further comprises a signal generation module 40, and the signal generation module 40 is connected with the gate of the bipolar transistor 01 and used for sending a driving signal. The driving signal may be various, for example, a PWM (Pulse width modulation) signal. The detection control module 30 is electrically connected to the signal generation module 40, and is configured to control the signal generation module 40 to stop sending the driving signal when the bipolar transistor 01 is short-circuited.
In one embodiment, as shown in FIG. 3, the detection control module 30 includes a control sub-module 32 and an enable sub-module 31. The current change rate detection module 10 is connected to the first reference voltage and the driving signal output by the signal generation module 40, and is configured to output a first logic signal to the control sub-module 32 based on the first reference voltage, the detected induced voltage and the driving signal. The enabling sub-module 31 is connected to the VCE voltage, the second reference voltage and the driving signal output by the signal generating module 40, and is configured to output a second logic signal to the control sub-module 32 based on the VCE voltage, the second reference voltage and the driving signal, and output a third logic signal to the control sub-module 32 based on the driving signal.
The VCE voltage detection module 20 is coupled to the third reference voltage, and is configured to output a fourth logic signal to the control sub-module 32 based on the VCE voltage and the third reference voltage. The control sub-module 32 is configured to control whether the current change rate detection module 10 and the VCE voltage detection module 20 are in an enabled state and whether the control signal generation module 40 sends the driving signal based on the first logic signal, the second logic signal, the third logic signal, and the fourth logic signal.
The following description will use a bipolar transistor as an IGBT. The short-circuit fault detection method comprises the steps of enabling the current change rate detection module to detect the short-circuit fault in the process of turning on the IGBT, not enabling the VCE voltage detection module when the IGBT is not turned on, and enabling the VCE voltage detection module to detect the short-circuit fault in the state that the IGBT is turned on, so that the short-circuit detection without a blind area and a dead angle is realized.
In one embodiment, as shown in fig. 4, the signal generation module 40 includes a signal controller unit 401 and a power amplification unit 402. The output end of the second trigger unit 322 in the control submodule is connected to the input end of the signal controller unit 401, and is used for sending a control signal for controlling whether the signal controller unit 401 sends the driving signal. The output end of the signal controller unit 401 is connected to the input end of the power amplifying unit 402, and the output end of the power amplifying unit 402 outputs the amplified driving signal. RG is the drive resistance of the drive signal.
The enabling sub-module 31 includes an inverting unit 311, a first comparing unit 312, and a first triggering unit 313. The inversion unit 331 may be implemented as various inverters, the first comparison unit 312 may be implemented as various comparators, and the first trigger unit 313 may be implemented as an RS flip-flop, an RS latch, or the like. The input end of the inverting unit 311 is connected to the output end of the power amplifying unit 402 of the signal generating module 40, and the driving signal is accessed to perform an inverting process on the driving signal, so as to generate a third logic signal and output the third logic signal to the second triggering unit 322 of the control sub-module. Two input terminals of the first comparing unit 312 are respectively connected to the VCE voltage and the second reference voltage VREF2, and generate a first comparison result signal based on a comparison result of the VCE voltage and the VREF 2.
The output end of the inverting unit 311 and the output end of the first comparing unit 312 are respectively connected to two input ends of the first triggering unit 313, and the first triggering unit 313 generates a second logic signal based on the third logic signal and the first comparison result signal and outputs the second logic signal to the control submodule. The enabling sub-module 31 enables the current change rate detection module in the turn-on process of the IGBT, the VCE voltage detection model module does not enable the current change rate detection module, and the current change rate detection module detects whether the IGBT is short-circuited or not in the turn-on process of the IGBT.
The control submodule includes a first and gate unit 321, a second trigger unit 322, and an or gate unit 323. The first and gate unit 321 may be implemented as various and gates, the second flip-flop unit 322 may be implemented as an RS flip-flop, an RS latch, etc., or the or gate unit 323 may be implemented as various or gates. The two input ends of the first and gate unit 321 are respectively connected to the second logic signal and the fourth logic signal, and the second logic signal and the fourth logic signal are anded. One input end of the or gate unit 323 is connected to the output end of the first and gate unit 321, and the other input end is connected to the first logic signal to perform or processing on the output signal of the first and gate unit and the first logic signal.
The first trigger unit 313 and the output end of the second comparing unit 201 are input to the first and gate unit 321 together, and when the first trigger unit 313 outputs a low level, no matter what the output value of the second comparing unit 201 is, the output of the first and gate unit 321 is at the low level, that is, the VCE voltage detecting module is not enabled, that is, the VCE voltage detecting module does not perform a detecting function.
When the IGBT is fully turned on, the first comparing unit 312 outputs a high level, that is, the S input of the first triggering unit 313 is 1, and the R input is still 0, so that the output Q is 1 according to the characteristics of the first triggering unit 313 itself; the first trigger unit 313 and the second comparison unit 201 are simultaneously input to the first and gate unit 321, because the output of the first trigger unit 313 is 1, the output of the first and gate unit 321 is determined by the second comparison unit 201, i.e. the VCE voltage detection module is enabled.
One input end of the second trigger unit 322 is connected to the output end of the or gate unit 323, and the other input end is connected to the third logic signal; the output end of the second trigger unit 322 is connected with the signal controller unit 401 of the signal generation module; the second trigger unit 322 is configured to generate a control signal for controlling whether the signal generation module sends the driving signal based on the output signal of the or gate unit 323 and the third logic signal, and send the control signal.
The current change rate detection module includes a second and gate unit 101 and a Di/dt detection unit 102. The second and gate unit 101 may be implemented as various and gates, and the Di/dt detection unit 102 may be implemented as various existing detection circuits. The Di/dt detection unit 102 collects the induced voltage, switches in the first reference voltage VREF1, and outputs a second comparison result signal to the second and gate unit 101 based on the comparison result between the induced voltage and VREF 1. Two input ends of the second and gate unit 101 are respectively connected to the second comparison result signal and the driving signal, and generate a first logic signal based on the result of and processing the second comparison result signal and the driving signal, and output the first logic signal to the or gate unit 323 of the control submodule.
The VCE voltage detection module includes a second comparison unit 201, and the second comparison unit 201 may be implemented as various comparators. The second comparing unit 201 is configured to collect the VCE voltage, access the third reference voltage VREF3, generate a fourth logic signal based on a comparison result between the VCE voltage and the third reference voltage VREF3, and output the fourth logic signal to the first and gate unit 321 of the control submodule.
In one embodiment, the signal controller unit 401 may be implemented as a DSP, etc., and during the normal turn-on process of the IGBT, the signal controller unit 401 sends out a PWM pulse signal to set the high level turn-on. In the turn-on process of the IGBT, when the VCE voltage is greater than the second reference voltage VREF2, the first comparing unit 312 outputs a low level, the signal controller unit 401 outputs a high level to turn on, that is, the power amplifying unit 402 outputs a high level, the inverting unit 311 outputs a low level, and since the initial value before the turn-on is 0, the output level of the first triggering unit 313 remains unchanged, so that the first triggering unit 313 outputs a low level, and the VCE voltage detecting module is not enabled.
If the IGBT short circuit occurs in the turn-on process of the IGBT, the IC current is rapidly increased and generally changes at the rate of kA/us; an induced voltage V (PE-E) is generated in the parasitic inductance between the power emitter PE and the auxiliary emitter E, and when the induced voltage is greater than the first reference voltage VREF1, the di/dt detecting unit 102 outputs a high level and the power amplifying unit 402 outputs a high level, so that the second and gate unit 101 outputs a high level signal to the or gate unit 323, which outputs a high level. The S terminal of the second trigger unit 322 is at a high level, and the R terminal is at a low level, so that the output terminal Q is at a high level and is output to the signal controller unit 101, and a driving (PWM) signal is blocked.
After the IGBT is normally turned on, the VCE voltage is a saturated turn-on voltage VCE voltage (TH) lower than the second reference voltage VREF2, so the first comparing unit 312 outputs a high level, the inverting unit 311 still outputs a low level, the first triggering unit 313 outputs a high level, and the VCE voltage detecting module is enabled. If short circuit occurs during the on period of the IGBT, the IC current rises rapidly, the IGBT exits the saturation region and enters the amplification region, the VCE voltage rises, when it is greater than the third reference voltage VREF3, the second comparison unit 201 outputs a high level, the first and gate unit 321 outputs a high level to the or gate unit 323, which outputs a high level, the S terminal of the second trigger unit 322 is a high level, and the R terminal is a low level, the output terminal Q is a high level and outputs to the signal controller unit 401, and a driving (PWM) signal is blocked.
After the IGBT is conducted, the VCE voltage detection module can protect in time no matter what kind of short circuit occurs, the third reference voltage VREF3 is larger than the second reference voltage VREF2, the second reference voltage VREF2 is larger than the saturation conducting voltage VCE voltage (TH) of the IGBT, namely VREF3 > VREF2 > VCE voltage (TH), the VCE voltage (TH) is generally 2V, VREF2 is generally 6-8V, VREF3 is generally 10-12V, and VREF1 is generally 3-4V. VREF3 is the VCE voltage when the IGBT exits the saturation region and enters the amplification region when a short circuit occurs, with VREF2 in between.
Fig. 5 is a schematic control flow diagram of an embodiment of a short-circuit detection apparatus for a bipolar transistor according to the present invention, wherein a current change rate detection module is used for detecting an induced voltage corresponding to a parasitic inductance between a power emitter and an auxiliary emitter of the bipolar transistor, and a VCE voltage detection module is used for detecting a VCE voltage of a collector and emitter of the bipolar transistor; as shown in fig. 5:
And 502, in the on state of the bipolar transistor, controlling the VCE voltage detection module to be in an enabled state through the detection control module, so as to detect whether the bipolar transistor is short-circuited through the VCE voltage detection module.
Fig. 6 is a schematic diagram of a control flow of stopping sending the driving signal according to an embodiment of the short circuit detection device of the bipolar transistor of the present invention, as shown in fig. 6:
And step 602, when the bipolar transistor is short-circuited, controlling the signal generation module to stop sending the driving signal through the detection control module.
Fig. 7 is a schematic diagram of a detection control flow according to an embodiment of the short-circuit detection device for a bipolar transistor of the present invention, wherein the detection control module includes a control sub-module and an enable sub-module, as shown in fig. 7:
in step 701, a first logic signal is output to the control submodule through the current change rate detection module based on the first reference voltage, the induced voltage and the driving signal.
And step 702, outputting a second logic signal to the control submodule through the enabling submodule based on the VCE voltage, the second reference voltage and the driving signal, and outputting a third logic signal to the control submodule based on the driving signal.
And step 703, outputting a fourth logic signal to the control submodule through the VCE voltage detection module based on the VCE voltage and the third reference voltage.
In one embodiment, the enabling sub-module includes an inverting unit, a first comparing unit, and a first triggering unit; the input end of the reverse unit is connected with the output end of the signal generation module and is connected with a driving signal; two input ends of the first comparison unit are respectively connected with a VCE voltage and a second reference voltage; the output end of the reverse unit and the output end of the first comparison unit are respectively connected with the two input ends of the first trigger unit.
The reverse unit carries out reverse processing on the driving signal to generate a third logic signal and outputs the third logic signal to the control submodule; the first comparison unit generates a first comparison result signal based on a comparison result of the VCE voltage and the second reference voltage; the first trigger unit generates a second logic signal based on the third logic signal and the first comparison result signal and outputs the second logic signal to the control submodule.
In one embodiment, the control submodule comprises a first and gate unit, a second trigger unit and an or gate unit; two input ends of the first AND gate unit are respectively connected with a second logic signal and a fourth logic signal; one input end of the OR gate unit is connected with the output end of the first AND gate unit, and the other input end of the OR gate unit is connected with the first logic signal; one input end of the second trigger unit is connected with the output end of the OR gate unit, and the other input end of the second trigger unit is connected with the third logic signal; the output end of the second trigger unit is connected with the signal generating module.
The first AND gate unit is used for AND processing the second logic signal and the fourth logic signal; the OR gate unit performs OR processing on the output signal of the first AND gate unit and the first logic signal; the second trigger unit generates and sends a control signal for controlling whether the signal generation module sends the driving signal based on the output signal of the OR gate unit and the third logic signal.
In one embodiment, the current rate of change detection module includes: a second AND gate unit and a Di/dt detection unit; the Di/dt detection unit collects the induction voltage and is connected to a first reference voltage; two input ends of the second AND gate unit are respectively connected with the second comparison result signal and the driving signal, and the output end of the second AND gate unit is connected with the OR gate unit.
The Di/dt detection unit outputs a second comparison result signal to the second AND gate unit based on the comparison result of the induction voltage and the first reference voltage; the second and gate unit generates a first logic signal based on a result of and processing the second comparison result signal and the driving signal and outputs the first logic signal to the or gate unit.
In one embodiment, the VCE voltage detection module includes a second comparison unit; the second comparison unit collects VCE voltage and is connected to a third reference voltage, and the output end of the second comparison unit is electrically connected with the first AND gate unit. The second comparison unit generates a fourth logic signal based on the comparison result of the VCE voltage and the third reference voltage and outputs the fourth logic signal to the first and gate unit.
In one embodiment, the signal generation module comprises: a signal controller unit and a power amplifying unit; the second trigger unit is connected with the input end of the signal controller unit; the output end of the signal controller unit is connected with the input end of the power amplification unit, and the output end of the power amplification unit outputs the amplified driving signal. When the bipolar transistor is short-circuited, the second trigger unit sends a control signal for controlling the signal controller unit to stop sending the driving signal.
In one embodiment, during the turning-on process of the bipolar transistor, the inverting unit outputs a third logic signal to the first and gate unit; the driving signal is at a high level, and the third logic signal is at a low level. When the voltage VCE is larger than the second reference voltage, the first comparison unit outputs a first comparison result signal; wherein the first comparison result signal is at a low level.
The first trigger unit generates a second logic signal based on the third logic signal and the first comparison result signal and inputs the second logic signal into the first AND gate unit; the second logic signal is low level, and the VCE voltage detection module is in a disable state.
In the process of turning on the bipolar transistor, when the induction voltage is greater than the first reference voltage, the Di/dt detection unit outputs a second comparison result signal to the second AND gate unit; wherein the second comparison result signal is high level. The second AND gate unit generates a first logic signal based on the second comparison result signal and the driving signal and outputs the first logic signal to the OR gate unit; wherein the first logic signal is high.
The second trigger unit generates a control signal based on the high level and the third logic signal output by the or gate unit, and sends the control signal to the signal controller unit, so as to control the signal controller unit to stop sending the driving signal.
In one embodiment, in the on state of the bipolar transistor, the inverting unit receives the driving signal as high level and outputs a third logic signal to the first and gate unit; wherein the third logic signal is low. When the VCE voltage < the second reference voltage, the first comparing unit outputs a first comparison result signal; wherein the first comparison result signal is at a high level.
The first trigger unit generates a second logic signal based on the third logic signal and the first comparison result signal and inputs the second logic signal into the first AND gate unit; the second logic signal is high level, and the VCE voltage detection module is in an enable state.
When the voltage VCE is greater than the third reference voltage in the on state of the bipolar transistor, the second comparison unit generates a fourth logic signal and outputs the fourth logic signal to the first AND gate unit; wherein the fourth logic signal is high.
The first AND gate unit outputs a high level to the OR gate unit, and the second trigger unit generates a control signal based on the high level output by the OR gate unit and the third logic signal and sends the control signal to the signal controller unit so as to control the signal controller unit to stop sending the driving signal.
In the short-circuit detection device for the bipolar transistor provided by the above embodiment, the current change rate detection module is enabled to detect a short-circuit fault in the process of turning on the bipolar transistor, and the VCE voltage detection module is not enabled; the VCE voltage detection module is enabled to detect short-circuit faults in the state that the bipolar transistor is switched on, the short-circuit detection of the bipolar transistor without a blind area and a dead angle can be realized, the real-time detection can be realized in the switching-on process and the switching-on state of the bipolar transistor, the external interference is small, the detection accuracy is high, the reliability is good, the loss is small, the safe and reliable operation of the bipolar transistor can be ensured, and the product quality is improved.
The method and system of the present invention may be implemented in a number of ways. For example, the methods and systems of the present invention may be implemented by software, hardware, firmware, or any combination of software, hardware, and firmware. The above-described order for the steps of the method is for illustrative purposes only, and the steps of the method of the present invention are not limited to the order specifically described above unless specifically stated otherwise. Furthermore, in some embodiments, the present invention may also be embodied as programs recorded in a recording medium, the programs including machine readable instructions for implementing a method according to the present invention. Thus, the present invention also covers a recording medium storing a program for executing the method according to the present invention.
The description of the present invention has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to practitioners skilled in this art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (10)
1. A bipolar transistor short circuit detection device, comprising:
the current change rate detection module is used for detecting an induced voltage corresponding to parasitic inductance between a power emitter and an auxiliary emitter of the bipolar transistor;
the VCE voltage detection module is used for detecting the voltage of a collector and an emitter VCE of the bipolar transistor;
the detection control module is respectively electrically connected with the current change rate detection module and the VCE voltage detection module, and is used for controlling the current change rate detection module to be in an enabled state and the VCE voltage detection module to be in a disabled state in the process of turning on the bipolar transistor so as to detect whether the bipolar transistor is short-circuited or not through the current change rate detection module; and under the condition that the bipolar transistor is switched on, controlling the VCE voltage detection module to be in an enabling state so as to detect whether the bipolar transistor is short-circuited or not through the VCE voltage detection module.
2. The detection device of claim 1, further comprising:
the signal generation module is connected with a gate pole of the bipolar transistor and used for sending a driving signal;
the detection control module is electrically connected with the signal generation module and used for controlling the signal generation module to stop sending the driving signal when the bipolar transistor is short-circuited.
3. The detection apparatus of claim 2, wherein the detection control module comprises: a control submodule and an enable submodule;
the current change rate detection module is connected to a first reference voltage and the driving signal and used for outputting a first logic signal to the control submodule based on the first reference voltage, the induction voltage and the driving signal;
the enabling submodule is connected with the VCE voltage, a second reference voltage and the driving signal, and is used for outputting a second logic signal to the control submodule based on the VCE voltage, the second reference voltage and the driving signal and outputting a third logic signal to the control submodule based on the driving signal;
the VCE voltage detection module is connected with a third reference voltage and is used for outputting a fourth logic signal to the control submodule based on the VCE voltage and the third reference voltage;
the control sub-module is configured to control whether the current change rate detection module and the VCE voltage detection module are in an enabled state and whether the signal generation module stops sending the driving signal based on the first logic signal, the second logic signal, the third logic signal, and the fourth logic signal.
4. The detection apparatus of claim 3,
the enabling sub-module comprises: the device comprises an inversion unit, a first comparison unit and a first trigger unit;
the input end of the reversing unit is connected with the output end of the signal generating module, is connected with the driving signal, and is used for performing reverse processing on the driving signal so as to generate the third logic signal and output the third logic signal to the control submodule;
two input ends of the first comparing unit are respectively connected to the VCE voltage and the second reference voltage, and a first comparison result signal is generated based on a comparison result of the VCE voltage and the second reference voltage;
the output end of the inverting unit and the output end of the first comparing unit are respectively connected with two input ends of the first triggering unit, and the first triggering unit generates the second logic signal based on the third logic signal and the first comparison result signal and outputs the second logic signal to the control submodule.
5. The detection apparatus of claim 3,
the control sub-module includes: the first AND gate unit, the second trigger unit and the OR gate unit;
the two input ends of the first and gate unit are respectively connected to the second logic signal and the fourth logic signal, and the second logic signal and the fourth logic signal are subjected to and processing;
one input end of the OR gate unit is connected with the output end of the first AND gate unit, and the other input end of the OR gate unit is connected with the first logic signal to OR-process the output signal of the first AND gate unit and the first logic signal;
one input end of the second trigger unit is connected with the output end of the OR gate unit, and the other input end of the second trigger unit is connected with the third logic signal; the output end of the second trigger unit is connected with the signal generating module;
the second trigger unit is used for generating a control signal for controlling whether the signal generation module sends the driving signal or not based on the output signal of the OR gate unit and the third logic signal and sending the control signal.
6. The detection apparatus of claim 3,
the current change rate detection module includes: a second AND gate unit and a Di/dt detection unit;
the Di/dt detection unit collects the induction voltage and accesses a first reference voltage, and a second comparison result signal is output to the second AND gate unit based on the comparison result of the induction voltage and the first reference voltage;
and two input ends of the second and gate unit are respectively connected to the second comparison result signal and the driving signal, and generate the first logic signal based on the result of and processing the second comparison result signal and the driving signal and output the first logic signal to the control submodule.
7. The detection apparatus of claim 3,
the VCE voltage detection module includes: a second comparing unit; the second comparison unit is used for collecting the VCE voltage, accessing the third reference voltage, generating a fourth logic signal based on a comparison result of the VCE voltage and the third reference voltage, and outputting the fourth logic signal to the control submodule.
8. The detection apparatus of claim 3,
the signal generation module includes: a signal controller unit and a power amplifying unit;
the control submodule is connected with the input end of the signal controller unit and is used for sending a control signal for controlling whether the signal generation module sends the driving signal;
the output end of the signal controller unit is connected with the input end of the power amplification unit; and the output end of the power amplification unit outputs the amplified driving signal.
9. The detection apparatus of claim 2,
the driving signal includes: a PWM signal.
10. The detection apparatus according to any one of claims 1 to 9,
the bipolar transistor includes: an IGBT.
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| CN202022501770.8U CN213903712U (en) | 2020-11-02 | 2020-11-02 | Bipolar transistor short circuit detection device |
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| CN202022501770.8U CN213903712U (en) | 2020-11-02 | 2020-11-02 | Bipolar transistor short circuit detection device |
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