CN213866491U - Structure for improving oxidation of Czochralski semiconductor after crystal pulling - Google Patents
Structure for improving oxidation of Czochralski semiconductor after crystal pulling Download PDFInfo
- Publication number
- CN213866491U CN213866491U CN202022412802.7U CN202022412802U CN213866491U CN 213866491 U CN213866491 U CN 213866491U CN 202022412802 U CN202022412802 U CN 202022412802U CN 213866491 U CN213866491 U CN 213866491U
- Authority
- CN
- China
- Prior art keywords
- oxidation
- valve
- furnace body
- crystal pulling
- vacuum pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides an improve structure of oxidation after czochralski semiconductor crystal pulling, include: oxidation valve, furnace body and vacuum pump, its characterized in that: the furnace body, the oxidation valve and the vacuum pump are connected in sequence. The beneficial effects of the utility model are that through optimizing oxidation process, the oxidation process allows the air directly to get into the pipeline, avoids the thermal field spare contact of a large amount of oxygen and high temperature state, increases the life of thermal field spare. Meanwhile, the structure is simple, the maintenance is convenient, the processing cost is low, the effect is obvious, and the corrosion degree of the thermal field is greatly reduced.
Description
Technical Field
The utility model belongs to the field of semiconductor czochralski single crystal production, in particular to a structure for improving oxidation after the czochralski semiconductor is pulled.
Background
In the prior art, a complete straight-pull thermal field comprises a crucible, a heater, an inner guide cylinder, an outer guide cylinder, an upper heat-preservation cover, a lower heat-preservation cover, an upper heat-preservation cylinder, a middle heat-preservation cylinder, a lower heat-preservation cylinder, a furnace chassis, a furnace bottom protection disc, a crucible shaft, an electrode bolt, an exhaust port sheath, a sealing ring and a temperature measuring hole sheath.
Forming a high-temperature environment through a thermal field, wherein the melting point of silicon is about 1420 ℃; a graphite heater and a heat preservation system are arranged in the main furnace chamber, low-voltage large current flows through the heater to generate high temperature, heat heats the graphite crucible through radiation, and the graphite crucible heats the quartz crucible and the polycrystalline silicon material to reach the temperature required by melting and crystallization.
Meanwhile, the technical problem of thermal field corrosion exists, and important factors of the thermal field corrosion come from oxidation and high temperature. The heater is currently the main body of the thermal system, made of high purity graphite, which is the heat source for the system. The heat preservation system is made of graphite and also comprises carbon fiber, carbon felt and high-purity graphite which are mixed; oxides can be deposited on thermal field parts with lower temperature, so that the graphite parts and the carbon felt parts are seriously corroded, the service life is shortened, and the cost is increased.
SUMMERY OF THE UTILITY MODEL
The to-be-solved problem of the utility model is to provide an oxidation's structure after improving the vertical pulling semiconductor crystal pulling, especially be fit for the vertical pulling single crystal production process of semiconductor, reduce thermal field corrosion degree.
In order to solve the technical problem, the utility model discloses a technical scheme is: a structure for improving oxidation of a czochralski semiconductor after crystal pulling, comprising: oxidation valve, furnace body and vacuum pump, its characterized in that: the furnace body, the oxidation valve and the vacuum pump are connected in sequence.
Furthermore, the oxidation valve is a valve, and the oxygen-containing gas is introduced by opening the valve.
Further, the furnace body is a Czochralski single crystal furnace body, and the lower part of the furnace body is provided with an air outlet pipe.
Furthermore, the number of the air outlet pipes is not less than two.
Furthermore, the outlet pipe is arranged symmetrically to the furnace body.
Furthermore, volatile matters discharged from the air outlet pipe are gathered in an exhaust pipeline.
Furthermore, the position of the gas outlet pipe extending out of the furnace body is connected with the oxidation valve, and the volatile matters carried out by the furnace body are oxidized by the oxidation valve.
Furthermore, one side of the exhaust pipeline, which is far away from the oxidation valve, is connected with the vacuum pump, and the vacuum pump is used for pumping out the volatile matters after oxidation.
Further, the vacuum pump is used for pumping out the oxygen-containing gas.
Due to the adoption of the technical scheme, the oxidation process is optimized, and because volatile matters in the thermal field are less, air is allowed to directly enter the pipeline in the oxidation process, so that a large amount of oxygen is prevented from contacting the thermal field piece in a high-temperature state, and the service life of the thermal field piece is prolonged. Meanwhile, the structure is simple, the maintenance is convenient, the processing cost is low, the effect is obvious, and the corrosion degree of the thermal field is greatly reduced.
Drawings
Fig. 1 is an overall schematic view of an embodiment of the present invention;
fig. 2 is an overall schematic view of another embodiment of the present invention.
In the figure:
1. furnace body 2, oxidation valve 3, vacuum pump
Detailed Description
The invention will be further described with reference to the following examples and drawings:
in one embodiment of the present invention, as shown in fig. 1, a structure for improving oxidation after crystal pulling of a czochralski semiconductor comprises: the oxidation furnace comprises an oxidation valve 2, a furnace body 1 and a vacuum pump 3, wherein the furnace body 1, the oxidation valve 2 and the vacuum pump 3 are sequentially connected end to end.
As shown in figure 1, the furnace body 1 is a straight pulling single crystal furnace body, the furnace body is divided into an auxiliary chamber and a main chamber, the main chamber is a heating plant area, namely, the position shown by a dotted line in the figure, 2 air outlet pipes are arranged at the lower part of the furnace body 1 and symmetrically arranged at two sides of the furnace body 1, and volatile matters, dust and the like discharged from the air outlet pipes are gathered in an exhaust pipeline.
The oxidation valve 2 shown in figure 1 is a valve, one side of the oxidation valve 2 is connected with an oxygen-containing gas tank, the introduction of the oxygen-containing gas is realized by the opening of the valve, wherein the oxygen-containing gas is natural air, the oxidation valve 2 is connected at one side of the gas outlet pipe far away from the furnace body 1, in the embodiment, 2 oxidation valves 2 are respectively connected at one side of the gas outlet pipes at two sides far away from the furnace body 1, the natural air is introduced in the cooling process of the pipeline, volatile matters, dust and the like in the exhaust pipeline are slowly oxidized in the thermal field in the straight pulling process, and the occurrence of dust storm is prevented. The flow of the natural air can be realized by the opening degree of the valve.
As shown in fig. 1, a vacuum pump 3 is connected to one side of the exhaust pipeline far away from the oxidation valve 2, and the vacuum pump 3 is used for pumping out volatile matters, dust and the like after oxidation, so that the exhaust pipeline can be cleaned conveniently and dust storm can be prevented; the vacuum pump 3 also draws out the natural air introduced.
In another embodiment of the present invention, as shown in fig. 2, 2 pairs of outlet pipes are respectively disposed at the lower part, i.e. both sides, of the furnace body 1 in the czochralski single crystal furnace body 1, and are respectively disposed symmetrically to the furnace body 1, and volatile matters, dust and the like discharged from the outlet pipes are gathered in an exhaust pipeline.
The oxidation valve 2 shown in figure 2 is a valve, one side of the oxidation valve 2 is connected with an oxygen-containing gas tank, the introduction of the oxygen-containing gas is realized by the opening of the valve, wherein the oxygen-containing gas is natural air, the oxidation valve 2 is connected with one side of the gas outlet pipe far away from the furnace body 1, in the embodiment, 2 oxidation valves 2 are respectively connected with one sides of the gas outlet pipes at two sides far away from the furnace body 1, the natural air is introduced in the cooling process of the pipeline, volatile matters, dust and the like in the exhaust pipeline are slowly oxidized in the thermal field in the straight pulling process, and the occurrence of dust storm is prevented. The flow of the natural air can be realized by the opening degree of the valve.
As shown in fig. 2, a vacuum pump 3 is connected to one side of the exhaust pipeline far away from the oxidation valve 2, and the vacuum pump 3 is used for pumping out volatile matters, dust and the like after oxidation, so that the exhaust pipeline can be cleaned conveniently and dust storm can be prevented; the vacuum pump 3 also draws out the natural air introduced.
In the previous production process, the oxidation valve 2 is connected with the top of the auxiliary chamber, after the oxidation valve 2 is opened and enters the oxidation process, natural air is sequentially treated by the auxiliary chamber, the main chamber, the exhaust pipeline, the vacuum pump 3 and the centralized pipeline, so that the graphite part and the carbon felt part are seriously corroded, the service life is shortened, and the cost is increased.
In the oxidation process, because the volatile matter in the thermal field is less, the oxidation process allows air to directly enter the exhaust pipeline, so that a large amount of oxygen is prevented from contacting the thermal field piece in a high-temperature state, and the service life of the thermal field piece is prolonged.
After improving the utility model discloses an among the oxidation process, oxidation valve 2 opens and gets into the oxidation technology after, and natural air is successively handled through exhaust pipe, vacuum pump 3, centralized pipeline, increases the life who heats the field spare. Meanwhile, the structure is simple, the corrosion degree of the thermal field is greatly reduced, and the safety of the operating environment is ensured.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (9)
1. A structure for improving oxidation of a czochralski semiconductor after crystal pulling, comprising: oxidation valve, furnace body and vacuum pump, its characterized in that: the furnace body, the oxidation valve and the vacuum pump are connected in sequence.
2. A structure for improving oxidation of a czochralski semiconductor after crystal pulling as recited in claim 1, wherein: the oxidation valve is a valve, and the oxygen-containing gas is introduced by opening the valve.
3. A structure for improving oxidation of a czochralski semiconductor after crystal pulling as claimed in claim 1 or 2, wherein: the furnace body is a straight-pull single crystal furnace body, and the lower part of the furnace body is provided with an air outlet pipe.
4. A structure for improving oxidation of a czochralski semiconductor after crystal pulling as recited in claim 3, wherein: the number of the air outlet pipes is not less than two.
5. A structure for improving oxidation of a czochralski semiconductor after crystal pulling as recited in claim 3, wherein: the outlet pipe is arranged symmetrically to the furnace body.
6. A structure for improving oxidation of a czochralski semiconductor after crystal pulling as recited in claim 3, wherein: the volatiles discharged from the outlet pipe are collected in an exhaust pipe.
7. A structure for improving oxidation of a Czochralski semiconductor after crystal pulling as recited in claim 6, wherein: the part of the gas outlet pipe extending out of the furnace body is connected with the oxidation valve, and the volatile matter carried out by the furnace body is oxidized by the oxidation valve.
8. A structure for improving oxidation of a Czochralski semiconductor after crystal pulling as recited in claim 6, wherein: and one side of the exhaust pipeline, which is far away from the oxidation valve, is connected with the vacuum pump, and the vacuum pump is used for pumping the oxidized volatile matters.
9. A structure for improving oxidation of a czochralski semiconductor after crystal pulling as recited in claim 2, wherein: the vacuum pump is used for pumping out the oxygen-containing gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022412802.7U CN213866491U (en) | 2020-10-27 | 2020-10-27 | Structure for improving oxidation of Czochralski semiconductor after crystal pulling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022412802.7U CN213866491U (en) | 2020-10-27 | 2020-10-27 | Structure for improving oxidation of Czochralski semiconductor after crystal pulling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213866491U true CN213866491U (en) | 2021-08-03 |
Family
ID=77074743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022412802.7U Active CN213866491U (en) | 2020-10-27 | 2020-10-27 | Structure for improving oxidation of Czochralski semiconductor after crystal pulling |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213866491U (en) |
-
2020
- 2020-10-27 CN CN202022412802.7U patent/CN213866491U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN213866491U (en) | Structure for improving oxidation of Czochralski semiconductor after crystal pulling | |
| CN211595791U (en) | LPCVD double-layer furnace tube structure | |
| CN113737270B (en) | Exhaust device of thermal field | |
| CN111777060A (en) | Carbon nanotube's purification device | |
| CN111926383A (en) | Novel energy-saving semiconductor graphite thermal field | |
| CN115215327B (en) | Device and method for purifying carbon nano tube | |
| CN201634435U (en) | Jointed vacuum high-temperature disproportionated reaction device | |
| CN213238447U (en) | Novel flange structure | |
| CN111442645B (en) | Heating furnace and heating system for preparing liquid chloride | |
| CN215138624U (en) | Argon tail gas treatment device of single crystal furnace | |
| CN202202015U (en) | Thermal filed with multiple downward exhaust pipelines distributed uniformly for direct-pulling silicon single crystal furnace | |
| CN101787562A (en) | Connected vacuum high-temperature disproportionated reaction device | |
| CN211199471U (en) | G6 polycrystal ingot furnace | |
| CN213624467U (en) | Thermal field for single crystal furnace and single crystal furnace | |
| CN208980845U (en) | Low temperature carbonization furnace | |
| CN209082035U (en) | Reduce the polycrystalline silicon ingot or purifying furnace of high-purity argon gas usage amount | |
| CN209484283U (en) | A kind of liquefied gas purification devices | |
| CN112226811A (en) | Thermal field for single crystal furnace and single crystal furnace | |
| CN220288196U (en) | Hafnium tetrachloride purification stove courage | |
| CN109137066A (en) | Reduce the polycrystalline silicon ingot or purifying furnace of high-purity argon gas usage amount | |
| CN206477037U (en) | A kind of gallium electrolysis cooling electrode | |
| CN219991784U (en) | Vacuumizing device and ingot furnace thereof | |
| CN218755905U (en) | Tempering furnace with exhaust-gas treatment function | |
| CN221425812U (en) | Ultra-high temperature on-line temperature measuring device of graphitization furnace | |
| CN217052397U (en) | Normal pressure CVD film continuous growth furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220412 Address after: 010070 No.15 Baolier street, Saihan District, Hohhot, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. Patentee after: Central leading semiconductor materials Co., Ltd Address before: 010070 No.15 Baolier street, Saihan District, Hohhot, Inner Mongolia Autonomous Region Patentee before: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. |
|
| TR01 | Transfer of patent right |