CN213845250U

CN213845250U - Semiconductor transistor with dustproof effect

Info

Publication number: CN213845250U
Application number: CN202022853025.XU
Authority: CN
Inventors: 陈金松
Original assignee: Shenzhen Tuofeng Semiconductor Technology Co ltd
Current assignee: Shenzhen Tuofeng Semiconductor Technology Co ltd
Priority date: 2020-12-02
Filing date: 2020-12-02
Publication date: 2021-07-30
Anticipated expiration: 2030-12-02

Abstract

The utility model discloses a semiconductor transistor with dustproof effect, including transistor body and pin, it is three the pin evenly is fixed in the bottom of transistor body, the sheath has been cup jointed at the top of transistor body, and the intermediate position fixedly connected with jib at sheath top. The utility model discloses when using, press the sheath, make the bottom laminating circuit board of sheath, rotor arm and fixed arm are pressed to this in-process briquetting, rotor arm atress slope, the rubber band ring is tensile, after the inclined plane of rotor arm and fixed arm is left to the bottom of briquetting, the rubber band ring stimulates the rotor arm and resets, rotor arm and the common joint fixed briquetting of fixed arm this moment, and then accomplish the location of sheath, accomplish the dustproof work of transistor body through the sheath, and the fixed process of sheath is simple and convenient, only need one to push down the step and can accomplish, the simple operation, easily installation, the baffle carries on spacingly to initial state's briquetting, avoid the sheath to rock.

Description

Semiconductor transistor with dustproof effect

Technical Field

The utility model relates to an electronic components technical field especially relates to a semiconductor transistor with dustproof effect.

Background

The transistor is a solid semiconductor device (including diode, triode, field effect transistor, thyristor, etc., sometimes referred to as bipolar device), and has multiple functions of detection, rectification, amplification, switching, voltage stabilization, signal modulation, etc. The transistor, which is a type of variable current switch, is capable of controlling an output current based on an input voltage.

The conventional transistor does not have a dustproof protection accessory, when the transistor works in a working environment with a large amount of dust suspended, the dust can be attached to the surface of the transistor, the performance of the transistor is affected, and the transistor is not convenient to disassemble and clean.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the defects existing in the prior art, and providing a semiconductor transistor with a dustproof effect.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a semiconductor transistor with dustproof effect, includes transistor body and pin, it is three the pin evenly is fixed in the bottom of transistor body, the sheath has been cup jointed at the top of transistor body, and the intermediate position fixedly connected with jib at sheath top, the bottom fixedly connected with briquetting of jib, and one side fixedly connected with fixed arm at transistor body top, the opposite side at transistor body top rotates and is connected with the rotor arm, and the top of rotor arm and fixed arm sets up the inclined plane to the symmetric distribution, and the both sides of briquetting bottom contact with two inclined planes respectively, the same rubber band ring of bottom fixedly connected with of rotor arm and fixed arm, and the first baffle of one side fixedly connected with at fixed arm top, first baffle is laminated mutually with the top of briquetting.

Preferably, the bottom of the rotating arm is rotatably connected with a fixing piece through a pin shaft, and the fixing piece is adhered to the top of the transistor body.

Preferably, the rotating arm and the fixed arm are fixedly connected with two symmetrically arranged buckles at the bottom close to one side, and the rubber band ring is sleeved between the two buckles.

Preferably, the bottom of the sheath is bonded with a rubber ring.

Preferably, the middle parts of the two sides of the transistor body are all embedded with the frame bodies, the bottoms of the inner walls of the two sides of the sheath are fixedly connected with the sliding blocks, and the two sliding blocks are respectively connected inside the two frame bodies in a sliding mode.

Preferably, two the slider is close to one side all scarf joint has the ball mutually, and two balls laminate mutually with the inner wall of two frameworks respectively.

Preferably, the ventilation groove that the slope set up is all seted up at the top of sheath both sides, and the one end that two ventilation grooves kept away from mutually all is towards downwards, the crisscross second baffle that sets up of the equal fixedly connected with of inner wall in two ventilation grooves.

Compared with the prior art, the utility model provides a semiconductor transistor with dustproof effect possesses following beneficial effect:

1. through setting up the sheath, the briquetting, rotor arm and rubber band ring, press the sheath, make the bottom laminating circuit board of sheath, rotor arm and fixed arm are pressed to this in-process briquetting, the rotor arm atress slope, the rubber band ring is tensile, leave behind the inclined plane of rotor arm and fixed arm when the bottom of briquetting, the rubber band ring pulling rotor arm resets, rotor arm and the common joint fixed briquetting of fixed arm this moment, and then accomplish the location of sheath, accomplish the dustproof work of transistor body through the sheath, and the fixed course of sheath is simple and convenient, only need one step of pushing down to accomplish, the simple operation, easily installation, first baffle carries on spacingly to initial state's briquetting, avoid the sheath to rock.

2. Through setting up framework, slider and ball, two sliders slide along the inside of two frameworks respectively, carry on spacingly to the stroke of sheath, and the guarantee sheath moves down along the fixed orbit, accomplishes the sealing of transistor body, and the ball turns into rolling friction with the sliding friction between slider and the framework, makes the process of pressing the sheath more laborsaving.

3. Through setting up ventilation groove and second baffle, the sheath accomplishes to the transistor body and seals the back, and two ventilation grooves are used for realizing the circulation of the inside and outside air of sheath, and the transistor body of being convenient for dispels the heat, and crisscross second baffle that distributes and the decurrent ventilation groove of slope all can effectively avoid the dust to fall into the sheath.

Drawings

Fig. 1 is a cross-sectional view of a semiconductor transistor with a dustproof effect according to embodiment 1;

fig. 2 is a schematic structural diagram of a semiconductor transistor with a dustproof effect at a position a in embodiment 1;

fig. 3 is a schematic structural diagram of a rotating arm and a fixed arm of a semiconductor transistor with a dustproof effect according to embodiment 1;

fig. 4 is a cross-sectional view of a protective cover of a semiconductor transistor having a dustproof effect as set forth in embodiment 2.

In the figure: the transistor comprises a transistor body 1, a sliding block 2, a rolling ball 3, a pin 4, a rubber ring 5, a frame 6, a sheath 7, a rotating arm 8, a pressing block 9, a hanging rod 10, a fixing arm 11, a first baffle 12, a fixing plate 13, a buckle 14, a rubber band ring 15, a second baffle 16 and a ventilating groove 17.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.

In the description of this patent, it is noted that unless otherwise specifically stated or limited, the terms "mounted," "connected," and "disposed" are to be construed broadly and can include, for example, fixedly connected, disposed, detachably connected, disposed, or integrally connected and disposed. The specific meaning of the above terms in this patent may be understood by those of ordinary skill in the art as appropriate.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Example 1

Referring to fig. 1-3, a semiconductor transistor with dust-proof effect comprises a transistor body 1 and three pins 4, wherein the three pins 4 are uniformly fixed at the bottom of the transistor body 1, the top of the transistor body 1 is sleeved with a sheath 7, a suspender 10 is fixedly connected at the middle position of the top of the sheath 7, a pressing block 9 is fixedly connected at the bottom end of the suspender 10, and one side of the top of the transistor body 1 is fixedly connected with a fixed arm 11, the other side of the top of the transistor body 1 is rotatably connected with a rotating arm 8, the tops of the rotating arm 8 and the fixed arm 11 are provided with inclined planes which are symmetrically distributed, two sides of the bottom of the pressing block 9 are respectively contacted with the two inclined planes, the bottoms of the rotating arm 8 and the fixed arm 11 are fixedly connected with the same rubber ring 15, and one side fixedly connected with first baffle 12 at fixed arm 11 top, first baffle 12 is laminated mutually with the top of briquetting 9.

The utility model discloses in, the bottom of rotor arm 8 is connected with stationary blade 13 through the round pin hub rotation, and stationary blade 13 bonds in the top of transistor body 1, installs rotor arm 8 at the top of transistor body 1 through stationary blade 13.

Wherein, the bottom fixedly connected with that rotor arm 8 and fixed arm 11 are close to one side mutually has two buckles 14 that the symmetry set up, and rubber band ring 15 cup joints between two buckles 14, fixes rubber band ring 15 between fixed arm 11 and rotor arm 8 through buckle 14.

Wherein, the bottom of sheath 7 bonds there is rubber circle 5, and rubber circle 5 plays the cushioning effect between the bottom of sheath 7 and circuit board, prevents to cause wearing and tearing to the circuit board.

Wherein, the middle part of 1 both sides of transistor body is all scarfed and is had framework 6, and the equal fixedly connected with slider 2 in bottom of 7 both sides inner walls of sheath, and two slider 2 sliding connection are in the inside of two frameworks 6 respectively.

Wherein, two sliders 2 are close to one side all scarf joint have ball 3 mutually, and two ball 3 laminate mutually with the inner wall of two frameworks 6 respectively, and ball 3 turns into rolling friction with the sliding friction between slider 2 and the framework 6, makes the process of pressing sheath 7 more laborsaving.

The working principle is as follows: the transistor body 1 is installed on a circuit board through pins 4, the sheath 7 is pressed after installation is completed, the bottom of the sheath 7 is attached to the circuit board, the press block 9 presses the rotating arm 8 and the fixing arm 11 in the process, the rotating arm 8 is stressed to incline, the rubber band ring 15 stretches, when the bottom of the press block 9 is separated from the inclined planes of the rotating arm 8 and the fixing arm 11, the rubber band ring 15 pulls the rotating arm 8 to reset, the rotating arm 8 and the fixing arm 11 are clamped and connected with the fixing press block 9 together at the moment, then positioning of the sheath 7 is completed, dust-proof work of the transistor body 1 is completed through the sheath 7, the fixing process of the sheath 7 is simple and convenient, only one pressing step is needed to complete, operation is convenient and easy to install, the first baffle plate 12 limits the press block 9 in an initial state, the sheath 7 is prevented from shaking, the two slide blocks 2 respectively slide along the insides of the two frame bodies 6, and limit the stroke of the sheath 7, the sheath 7 is guaranteed to move downwards along a fixed track, and the transistor body 1 is sealed.

Example 2

Referring to fig. 4, in the semiconductor transistor with a dustproof effect, in this embodiment, compared with embodiment 1, the top portions of both sides of the sheath 7 are respectively provided with the ventilation slots 17 which are obliquely arranged, and the ends of the two ventilation slots 17 which are far away from each other are both downward, and the inner walls of the two ventilation slots 17 are respectively and fixedly connected with the second baffle plates 16 which are arranged in a staggered manner.

The working principle is as follows: after the sheath 7 is sealed to the completion of transistor body 1, two ventilation slots 17 are used for realizing the circulation of inside and outside air of sheath 7, and the heat dissipation of transistor body 1 of being convenient for, crisscross second baffle 16 that distributes and the decurrent ventilation slot 17 of slope all can effectively avoid the dust to fall into sheath 7.

The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims

1. The utility model provides a semiconductor transistor with dustproof effect, includes transistor body (1) and pin (4), and is three pin (4) evenly are fixed in the bottom of transistor body (1), its characterized in that, sheath (7) have been cup jointed at the top of transistor body (1), and the intermediate position fixedly connected with jib (10) at sheath (7) top, the bottom fixedly connected with briquetting (9) of jib (10), and one side fixedly connected with fixed arm (11) at transistor body (1) top, the opposite side rotation at transistor body (1) top is connected with rotor arm (8), and the top of rotor arm (8) and fixed arm (11) sets up the inclined plane of symmetric distribution, and the both sides of briquetting (9) bottom contact with two inclined planes respectively, the bottom fixedly connected with same rubber band ring (15) of rotor arm (8) and fixed arm (11), and one side fixedly connected with first baffle (12) at fixed arm (11) top, first baffle (12) laminate mutually with the top of briquetting (9).

2. The semiconductor transistor with dustproof effect according to claim 1, wherein the bottom of the rotating arm (8) is rotatably connected with a fixing plate (13) through a pin shaft, and the fixing plate (13) is adhered to the top of the transistor body (1).

3. The semiconductor transistor with the dustproof effect according to any one of claims 1 to 2, wherein two symmetrically arranged buckles (14) are fixedly connected to the bottom of one side of the rotating arm (8) and the fixed arm (11), and the rubber ring (15) is sleeved between the two buckles (14).

4. The semiconductor transistor with dustproof effect according to claim 1, wherein a rubber ring (5) is adhered to the bottom of the sheath (7).

5. The semiconductor transistor with the dustproof effect according to claim 1, wherein the middle parts of two sides of the transistor body (1) are embedded with the frame bodies (6), the bottom parts of the inner walls of two sides of the sheath (7) are fixedly connected with the sliding blocks (2), and the two sliding blocks (2) are respectively connected with the inner parts of the two frame bodies (6) in a sliding manner.

6. The semiconductor transistor with the dustproof effect according to claim 5, wherein the balls (3) are embedded on the sides of the two sliders (2) close to each other, and the two balls (3) are respectively attached to the inner walls of the two frames (6).

7. The semiconductor transistor with the dustproof effect according to claim 1, wherein the top of each of two sides of the sheath (7) is provided with an inclined ventilation groove (17), the end of each of the two ventilation grooves (17) away from each other faces downwards, and the inner walls of the two ventilation grooves (17) are fixedly connected with second baffles (16) which are arranged in a staggered manner.