CN213842430U - Photoelectric detection chip - Google Patents
Photoelectric detection chip Download PDFInfo
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- CN213842430U CN213842430U CN202022199086.9U CN202022199086U CN213842430U CN 213842430 U CN213842430 U CN 213842430U CN 202022199086 U CN202022199086 U CN 202022199086U CN 213842430 U CN213842430 U CN 213842430U
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Abstract
The utility model discloses a micro-electromechanical photoelectric detection chip, this micro-electromechanical photoelectric detection chip includes: the inner chip is used for absorbing the optical signal with the preset wavelength and converting the optical signal with the preset wavelength into a corresponding electrical signal; the optical anti-reflection film layer is positioned on the surface side of the optical signal receiving surface of the inner chip and is used for transmitting the optical signal with the preset wavelength and blocking the transmission of the optical signal with the non-preset wavelength; and the light filtering protective layer is positioned on the surface of the optical antireflection film layer, which is far away from one side of the inner chip, and is used for transmitting a light signal with preset wavelength and protecting the inner chip. The utility model provides a technical scheme has improved the photoelectric conversion efficiency of micro-electromechanical photoelectric detection chip.
Description
Technical Field
The embodiment of the utility model provides a relate to semiconductor technology field, especially relate to a photoelectric detection chip.
Background
The micro-electro-mechanical photoelectric detection chip is used for absorbing optical signals with preset wavelength and converting the optical signals with the preset wavelength into corresponding electric signals, and has wide application in the field of photoelectric detection.
The existing micro-electromechanical detection chip comprises an inner chip and a filtering protective layer positioned on the inner chip, wherein a preset wavelength optical signal penetrates through the filtering protective layer to be absorbed by the inner chip and converted into a corresponding electrical signal, but the existing micro-electromechanical detection chip is low in photoelectric conversion efficiency and needs to be further improved.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention provides a photoelectric detection chip, which improves the photoelectric conversion efficiency of the micro electro mechanical system photoelectric detection chip.
The embodiment of the utility model provides a micro-electromechanical photoelectric detection chip, include: the inner chip is used for absorbing a preset wavelength optical signal and converting the preset wavelength optical signal into a corresponding electrical signal;
the optical anti-reflection film layer is positioned on the surface side of the optical signal receiving surface of the inner chip and is used for transmitting the optical signal with the preset wavelength and blocking the transmission of the optical signal with the non-preset wavelength;
and the light filtering protective layer is positioned on the surface of one side of the optical antireflection film layer, which is far away from the inner chip, and is used for transmitting the light signal with the preset wavelength and protecting the inner chip.
Optionally, the inner chip further comprises a substrate, a support layer, an infrared absorption layer and a thermopile;
an air cavity formed by grooves is arranged on the first surface of the substrate;
the supporting layer is positioned on the first surface of the substrate;
the infrared absorption layer is positioned in the air cavity and on the surface of the supporting layer on one side adjacent to the air cavity and used for absorbing infrared light signals;
the thermopile is positioned on the surface of one side, far away from the infrared absorption layer, of the supporting layer, one end, close to the infrared absorption layer, of the thermopile serves as a hot end, one end, far away from the infrared absorption layer, of the thermopile serves as a cold end, the cold end of the thermoelectric end serves as an electrode, and an electric signal corresponding to the infrared light signal is led to a second surface, opposite to the first surface, of the substrate through a conductive through hole.
Optionally, the light filtering protection layer includes a light transmitting region and a non-light transmitting region surrounding the light transmitting region, the micro-electromechanical photoelectric detection chip further includes a metal reflection layer, the metal reflection layer is located on a surface of the light filtering protection layer on a side away from the optical antireflection film layer, and the metal reflection layer is located in the non-light transmitting region.
Optionally, a groove is formed in the surface of the light filtering protection layer on the side adjacent to the optical antireflection film layer.
Optionally, the longitudinal cross-sectional shape of the groove is an inverted trapezoid.
Optionally, a fresnel diffraction structure is disposed on a surface of the light filtering protection layer on a side away from the optical antireflection film layer, and the fresnel diffraction structure is configured to focus a preset wavelength optical signal to an optical signal receiving area on an optical signal receiving surface of the inner chip.
Optionally, the fresnel diffractive structure comprises a central region, and at least one annular slit surrounding the central region.
Optionally, the centre of the annular slit coincides with the centre of the central region.
Optionally, the annular slit comprises a circular annular slit or a polygonal annular slit.
Optionally, the fresnel diffraction structure further comprises a slit spacing region, and the slit spacing region is located between two adjacent annular slits.
In this embodiment, the light filtering protection layer has a light transmittance capable of transmitting a light signal with a predetermined wavelength, and is located on the surface of the optical antireflection film layer on the side away from the inner chip, so as to protect the inner chip from being damaged by an external force. In addition, the optical antireflection film layer is used for transmitting the light signals with the preset wavelength and blocking the transmission of the light signals with the non-preset wavelength, so that the transmissivity of the light signals with the preset wavelength is increased, and the photoelectric conversion efficiency of the micro-electromechanical photoelectric detection chip is improved.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of a micro-electromechanical photoelectric detection chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another microelectromechanical photoelectric detection chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another micro-electromechanical photodetection chip according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view taken along line A1-A2 of FIG. 3;
fig. 5a is a top view of an infrared absorbing layer according to an embodiment of the present invention;
fig. 5b is a top view of another infrared absorbing layer provided by an embodiment of the present invention;
fig. 5c is a top view of another infrared absorbing layer provided by an embodiment of the present invention;
fig. 5d is a top view of another infrared absorbing layer provided by an embodiment of the present invention;
fig. 6a is a schematic structural diagram of another micro-electromechanical photodetection chip according to an embodiment of the present invention;
FIG. 6b is a schematic view of the structure of the filtering protective layer shown in FIG. 6 a;
fig. 7a is a schematic structural diagram of another micro-electromechanical photodetection chip according to an embodiment of the present invention;
FIG. 7b is a schematic view of the structure of the filtering protective layer shown in FIG. 7 a;
fig. 8a is a schematic structural diagram of another micro-electromechanical photodetection chip according to an embodiment of the present invention;
fig. 8b is a schematic view of the structure of the filtering protection layer shown in fig. 8 a.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As described in the background art, the photoelectric conversion efficiency of the existing micro-electromechanical detection chip is relatively low. The reason is that the existing micro-electromechanical photoelectric detection chip comprises an inner chip and a filtering protective layer positioned on the inner chip, a preset wavelength optical signal penetrates through the filtering protective layer to be absorbed by the inner chip and converted into a corresponding electric signal, and the transmittance of the filtering protective layer to optical signals of various wave bands is low due to the fact that the difference of the transmittance of the filtering protective layer to the optical signals of the preset wavelength optical signal, so that the photoelectric conversion effect of the inner chip to the optical signals of the preset wavelength is low.
To the above technical problem, the embodiment of the utility model provides a following technical scheme:
fig. 1 is a schematic structural diagram of a micro electromechanical photoelectric detection chip provided in an embodiment of the present invention. Referring to fig. 1, the micro-electromechanical photodetection chip 100 includes: the optical fiber connector comprises an inner chip 10, wherein the inner chip 10 is used for absorbing a light signal with preset wavelength and converting the light signal with the preset wavelength into a corresponding electrical signal; the optical antireflection film layer 20 is positioned on the side of the optical signal receiving surface 10A of the inner chip 10, and is used for transmitting the optical signals with the preset wavelength and blocking the transmission of the optical signals with the non-preset wavelength; and the light filtering protective layer 30 is positioned on the surface of the optical antireflection film layer 20 on the side far away from the inner chip 10, and is used for transmitting a light signal with preset wavelength and protecting the inner chip 10.
In the embodiment, the light filtering protection layer 30 has a light transmittance capable of transmitting a light signal with a predetermined wavelength, and is located on the surface of the optical antireflection film layer 20 away from the inner chip 10, so as to protect the inner chip 10 from being damaged by an external force. In addition, the optical anti-reflection film layer 20 is used for transmitting the light signals with the preset wavelength and blocking transmission of the light signals with the non-preset wavelength, so that the transmittance of the light signals with the preset wavelength is increased, and the photoelectric conversion efficiency of the micro-electromechanical photoelectric detection chip is improved.
Optionally, referring to fig. 1, the microelectromechanical photo-detection chip comprises an adhesive layer 40. It should be noted that the optical anti-reflection film layer 20 is thin, and in the process of manufacturing the micro-electromechanical detection chip 100, the optical anti-reflection film layer 20 is attached to the surface of the light filtering protection layer 30, and then the light filtering protection layer 30 with the optical anti-reflection film layer 20 is bonded to the inner core sheet 10 through the bonding layer 40. Illustratively, the bonding layer 40 includes, but is not limited to, organics, glass frit, or metal alloys. The inner chip 10 and the filter protection layer 30 with the optical antireflection film layer 20 are provided with a gap 50 in the vertical direction. Alternatively, the inner chip 10 and the filter protection layer 30 with the optical antireflection film layer 20 are formed into a vacuum chamber (gap 50) by a low-temperature vacuum bonding process, the influence of the ambient fluctuation on the photodetection performance of the inner chip 10 can be reduced, and the height of the gap 50 can be adjusted by adjusting the thickness of the adhesive layer 40.
Fig. 2 is a schematic structural diagram of another microelectromechanical photoelectric detection chip provided by the embodiment of the present invention. Fig. 3 is a schematic structural diagram of another mems photodetection chip according to an embodiment of the present invention. FIG. 4 is a cross-sectional view taken along line A1-A2 of FIG. 3. It should be noted that the microelectromechanical photodetection chip shown in fig. 3 does not show the film layer on the side of the thermopile 14 away from the substrate 11.
Alternatively, referring to fig. 2, 3 and 4, the internal chip 10 further includes a substrate 11, a support layer 12, an infrared absorption layer 13 and a thermopile 14; the first surface 110 of the substrate 11 is provided with an air cavity 11A formed by a groove; the support layer 12 is located on the first surface 110 of the substrate 11; the infrared absorption layer 13 is positioned in the air cavity 11A and positioned on the surface of the supporting layer 12 adjacent to one side of the air cavity 11A, and is used for absorbing infrared light signals; the thermopile 14 is located on the surface of one side, away from the infrared absorption layer 13, of the support layer 12, one end, close to the infrared absorption layer 13, of the thermopile 14 serves as a hot end, one end, away from the infrared absorption layer 13, of the thermopile 14 serves as a cold end, the cold end of the thermopile 14 serves as an electrode, and an electrical signal corresponding to the infrared light signal is led to a second surface 111, opposite to the first surface 110, of the substrate 11 through the conductive through hole.
Specifically, the micro-electromechanical photo-detection chip 100 in this embodiment is configured to absorb an infrared light signal through the infrared absorption layer 13, and convert the infrared light signal into a corresponding electrical signal through the thermopile 14. The principle in which the thermopile 14 converts an infrared light signal into a corresponding electrical signal is as follows:
based on the seebeck effect, the infrared absorption layer 13 absorbs the infrared light signals transmitted by the filtering protection layer 30 and the optical antireflection film layer 20, the hot end and the cold end of the thermopile 14 have temperature difference, the hot end of the thermopile 14 is close to the infrared absorption layer 13 and has a temperature higher than that of the cold end of the thermopile 14, and the hot end and the cold end of the thermopile 14 can generate thermoelectric difference so as to realize the function of converting the infrared light signals into corresponding electric signals by the thermopile 14.
Alternatively, referring to fig. 2, the thermopile 14 includes a first conductive layer 141 and a second conductive layer 142 made of different conductive materials, and an insulating layer 15 disposed between the first conductive layer 141 and the second conductive layer 142, the first conductive layer 141 being located on a surface of the support layer 12 on a side away from the infrared absorption layer 13, and the second conductive layer 142 being located on a surface of the insulating layer 15 on a side away from the first conductive layer 141. One end of the first conductive layer 141 near the infrared absorption layer 13 and one end of the second conductive layer 142 near the infrared absorption layer 13 are electrically connected as the hot end of the conductive stack 14. The end of the first conductive layer 141 remote from the infrared absorption layer 13 serves as the cold side of the thermopile 14 and is multiplexed as the first electrode 14A of the thermopile 14, and the end of the second conductive layer 142 remote from the infrared absorption layer 13 serves as the cold side of the thermopile 14 and is multiplexed as the second electrode 14B of the thermopile 14. The first electrode 14A brings an electrical signal of the first electrode 14A to the second surface 111 of the substrate 11 through the first conductive via 11B. The second electrode 14B brings an electrical signal of the second electrode 14B to the second surface 111 of the substrate 11 through the second conductive via 11C. Optionally, the micro-electromechanical photodetection chip 100 further includes a first soldering portion 17A and a second soldering portion 17B, the first soldering portion 17A is electrically connected to the first conductive via 11B, and the second soldering portion 17B is electrically connected to the second conductive via 11C. The first conductive via 11B and the second conductive via 11C are filled with a conductive material 16, and an insulating material is provided between the conductive material 16 and the substrate 11. Optionally, a solder resist layer 19 is disposed on the second surface of the substrate 11, and the solder resist layer 19 is provided with an opening structure exposing the first conductive via 11B and the second conductive via 11C. The first welding portion 17A and the second welding portion 17B are arranged to lead the thermoelectromotive force of the thermopile 14 to the second surface 111 of the substrate 11, and facilitate the micro electro mechanical system photoelectric detection chip 100 to be electrically connected with an external device through an automatic surface mounting process.
Fig. 5a is a top view of an infrared absorbing layer according to an embodiment of the present invention; fig. 5b is a top view of another infrared absorbing layer provided by an embodiment of the present invention; fig. 5c is a top view of another infrared absorbing layer provided by an embodiment of the present invention; fig. 5d is a top view of another infrared absorption layer provided in an embodiment of the present invention. Referring to fig. 5a and 5b, the infrared absorption layer 13 in the present embodiment has a circular shape. Referring to fig. 5c and 5d, the infrared absorption layer 13 in the present embodiment has a square shape. The infrared absorption layer 13 in the present embodiment includes a circular shape and a square shape but is not limited to the above-described shape. Referring to fig. 5 a-5 d, the infrared absorption layer 13 is formed with a slot 131 to facilitate releasing the substrate 11 by wet etching process to obtain the air cavity 11A. In the present embodiment, fine groove 131 in the present embodiment includes an "X" shape or a circular arc shape, but is not limited to the above shape. The thermopile 14 in this embodiment is made of Complementary Metal Oxide Semiconductor (CMOS) process compatible materials, alternatively, the thermopile 14 is formed of P-type and N-type doped polysilicon, or P-type doped polysilicon and metallic aluminum. The infrared absorption layer 13 is formed of heavily doped P-type silicon or N-type silicon, which is compatible with CMOS processes, and has higher manufacturability, simpler process, and better adhesion to the support layer 12 than conventional infrared absorption layer materials formed of metal thin films, porous black metal, and thin films.
Optionally, referring to fig. 2, the light filtering protection layer 30 includes a light transmitting region 30B and a non-light transmitting region 30C surrounding the light transmitting region, and the micro-electromechanical photodetecting chip 100 further includes a metal reflective layer 60, the metal reflective layer 60 is located on a surface of the light filtering protection layer 30 on a side away from the optical anti-reflection film layer 20, and the metal reflective layer 60 is located in the non-light transmitting region 30C.
Specifically, taking the structure of the inner core 10 shown in fig. 2 as an example for illustration, the metal reflective layer 60 is located in the non-transparent region 30C to define the field angle of the mems photodetection chip 100, specifically, the metal reflective layer 60 can reflect the infrared radiation incident to the non-transparent region 30C from the outside back to the surrounding environment, define the incident light path in the range of the transparent region 30B, further limit the infrared light signal in the groove structure 30A, and then be converted into the corresponding electrical signal by the inner core 10, so as to improve the photoelectric conversion efficiency of the mems photodetection chip 100. For example, the material of the metal reflective layer 60 may be aluminum metal with good reflective performance.
Optionally, referring to fig. 2, a surface of the light filtering protection layer 30 adjacent to one side of the optical antireflection film layer 20 is provided with a groove 30A.
Specifically, taking the structure of the inner core sheet 10 shown in fig. 2 as an example, the arrangement of the groove 30A enables the surface of the light filtering protection layer 30 on the side adjacent to the optical antireflection film layer 20 to form a concave cavity structure, so as to reduce the thickness of the light transmitting region 30B of the light filtering protection layer 30, reduce the transmission distance of the optical signal in the light filtering protection layer 30, further reduce the loss of the optical signal, and increase the transmittance of the infrared light signal.
Alternatively, referring to fig. 2, the longitudinal sectional shape of the groove 30A is an inverted trapezoid.
Specifically, the longitudinal section of the groove 30A is in the shape of an inverted trapezoid, and the side surface and the bottom surface of the groove 30A have a certain included angle, so that an optical signal reflected to the side surface of the groove 30A can be reflected back to the gap 50, thereby improving the photoelectric conversion efficiency of the micro-electromechanical detection chip.
Fig. 6a is a schematic structural diagram of another micro-electromechanical photodetection chip according to an embodiment of the present invention; fig. 6b is a schematic view of the structure of the filtering protection layer shown in fig. 6 a. Fig. 7a is a schematic structural diagram of another micro-electromechanical photodetection chip according to an embodiment of the present invention; fig. 7b is a schematic view of the structure of the filtering protection layer shown in fig. 7 a. Fig. 8a is a schematic structural diagram of another micro-electromechanical photodetection chip according to an embodiment of the present invention; fig. 8b is a schematic view of the structure of the filtering protection layer shown in fig. 8 a.
Referring to fig. 6a, 6b, 7a, 7b, 8a, and 8b, a fresnel diffraction structure 30D is disposed on a surface of the light filtering protection layer 30 on a side away from the optical antireflection film layer 20, and the fresnel diffraction structure 30D is used to focus a light signal with a predetermined wavelength on a light signal receiving area on the light signal receiving surface of the inner core 10.
The structure of the internal chip 10 shown in fig. 6a, 7a, and 8a is exemplified by the structure of the internal chip shown in fig. 2. Referring to fig. 6a, 6b, 7a, 7b, 8a and 8b, the projection of the fresnel diffractive structure 30D on the inner chip 10 covers the infrared absorbing layer 13. The region corresponding to the infrared absorption layer 13 is an optical signal receiving region of the optical signal receiving surface of the core sheet 10. The fresnel diffraction structure 30D is used to focus the light signal with the preset wavelength to the light signal receiving area on the light signal receiving surface of the inner chip 10, so that the intensity of the inner chip 10 absorbing the infrared light signal is increased, and the photoelectric conversion efficiency of the micro-electromechanical photoelectric detection chip is improved.
Alternatively, referring to fig. 6a, 6b, 7a, 7b, 8a and 8b, the fresnel diffractive structure 30D comprises a central region, and at least one annular slit surrounding the central region.
It should be noted that, referring to fig. 6b, the fresnel diffraction structure 30D includes a central region a, and at least one annular slit surrounding the central region, the annular slits being an annular slit b, an annular slit D, and an annular slit f, respectively. Referring to fig. 7b, the fresnel diffractive structure 30D includes a central region a, and at least one annular slit surrounding the central region, the annular slits being an annular slit b, an annular slit D, an annular slit f, and an annular slit h, respectively. Referring to fig. 8b, the fresnel diffractive structure 30D includes a central region a, and at least one annular slit surrounding the central region, the annular slits being an annular slit b, an annular slit D, an annular slit f, and an annular slit h, respectively. Wherein the radial distance of the annular slit from the central region a is related to the wavelength of the optical signal at the predetermined wavelength and the distance (focal length) from the bottom surface of the central region a to the infrared absorption layer 13.
Alternatively, referring to fig. 6a, 6b, 7a, 7b, 8a and 8b, the center of the annular slit coincides with the center of the central area a.
Optionally, the annular slit comprises a circular annular slit or a polygonal annular slit. That is, the slit having the circular cross-sectional shape of the annular slit is a circular annular slit. The slit with the polygonal cross section of the annular slit is a polygonal annular slit.
Optionally, the fresnel diffractive structure further comprises a slit spacing region, the slit spacing region being located between two adjacent annular slits.
Referring to fig. 6a and 6b, the fresnel diffractive structure 30D further includes a slit spacing region located between two adjacent annular slits. Wherein the slit spacing region c is located between the adjacent two annular slits b and d, and the slit spacing region e is located between the adjacent two annular slits d and f. Note that the slit spacing region g is used to isolate the annular slit f.
Referring to fig. 7a and 7b, the fresnel diffractive structure 30D further includes a slit spacing region located between two adjacent annular slits. Wherein the slit interval region c is located between two adjacent annular slits b and d, the slit interval region e is located between two adjacent annular slits d and f, and the slit interval region g is located between two adjacent annular slits f and h.
In addition, the fresnel diffraction structure 30D shown in fig. 6a, 6b, 8a, and 8b is formed by etching the filter protection layer 30 to form an annular slit. Fig. 7a and 7b show a fresnel diffraction structure 30D obtained by patterning and etching a metal film layer formed on the surface of the light filtering protection layer 30 on the side away from the optical antireflection film layer 20, and then etching the metal film layer.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (10)
1. A micro-electromechanical photoelectric detection chip is characterized by comprising: the inner chip is used for absorbing a preset wavelength optical signal and converting the preset wavelength optical signal into a corresponding electrical signal;
the optical anti-reflection film layer is positioned on the surface side of the optical signal receiving surface of the inner chip and is used for transmitting the optical signal with the preset wavelength and blocking the transmission of the optical signal with the non-preset wavelength;
and the light filtering protective layer is positioned on the surface of one side of the optical antireflection film layer, which is far away from the inner chip, and is used for transmitting the light signal with the preset wavelength and protecting the inner chip.
2. The microelectromechanical photodetection chip according to claim 1, characterized in that the inner chip further comprises a substrate, a support layer, an infrared absorbing layer and a thermopile;
an air cavity formed by grooves is arranged on the first surface of the substrate;
the supporting layer is positioned on the first surface of the substrate;
the infrared absorption layer is positioned in the air cavity and on the surface of the supporting layer on one side adjacent to the air cavity and used for absorbing infrared light signals;
the thermopile is positioned on the surface of one side, far away from the infrared absorption layer, of the supporting layer, one end, close to the infrared absorption layer, of the thermopile serves as a hot end, one end, far away from the infrared absorption layer, of the thermopile serves as a cold end, the cold end of the thermoelectric end serves as an electrode, and an electric signal corresponding to the infrared light signal is led to a second surface, opposite to the first surface, of the substrate through a conductive through hole.
3. The microelectromechanical photodetecting chip according to claim 1, characterized in that the light filtering protection layer comprises a light-transmitting region and a non-light-transmitting region surrounding the light-transmitting region, and the microelectromechanical photodetecting chip further comprises a metal reflective layer, the metal reflective layer is located on the surface of the light filtering protection layer on the side away from the optical antireflection film layer, and the metal reflective layer is located in the non-light-transmitting region.
4. The micro-electromechanical photoelectric detection chip according to claim 1, wherein a groove is formed on a surface of the light filtering protection layer adjacent to one side of the optical antireflection film layer.
5. The microelectromechanical photodetection chip according to claim 4, characterized in that the longitudinal cross-sectional shape of the groove is an inverted trapezoid.
6. The micro-electromechanical photoelectric detection chip according to claim 1, wherein a fresnel diffraction structure is disposed on a surface of the light filtering protection layer on a side away from the optical antireflection film layer, and the fresnel diffraction structure is configured to focus a predetermined wavelength optical signal to an optical signal receiving area on an optical signal receiving surface of the inner chip.
7. The microelectromechanical photodetection chip according to claim 6, characterized in that the fresnel diffractive structure comprises a central region and at least one annular slit surrounding the central region.
8. The microelectromechanical photodetection chip according to claim 7, characterized in that the center of the annular slit coincides with the center of the central region.
9. The microelectromechanical photodetection chip according to claim 7, characterized in that the annular slit comprises a circular annular slit or a polygonal annular slit.
10. The microelectromechanical photodetection chip according to claim 7, characterized in that the fresnel diffraction structure further comprises a slit spacing region, and the slit spacing region is located between two adjacent annular slits.
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| CN202022199086.9U CN213842430U (en) | 2020-09-29 | 2020-09-29 | Photoelectric detection chip |
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| CN202022199086.9U CN213842430U (en) | 2020-09-29 | 2020-09-29 | Photoelectric detection chip |
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| CN213842430U true CN213842430U (en) | 2021-07-30 |
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