CN213835629U - Device for eliminating internal stress of crystal ingot - Google Patents
Device for eliminating internal stress of crystal ingot Download PDFInfo
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- CN213835629U CN213835629U CN202021885273.6U CN202021885273U CN213835629U CN 213835629 U CN213835629 U CN 213835629U CN 202021885273 U CN202021885273 U CN 202021885273U CN 213835629 U CN213835629 U CN 213835629U
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Abstract
The application discloses a device for eliminating internal stress of a crystal ingot, comprising: the vibration table is provided with a low-frequency vibration area and an ultrasonic vibration area, the vibration frequency of the low-frequency vibration area is less than 500Hz, the vibration frequency of the ultrasonic vibration area is greater than 20kHz, and the crystal ingot is subjected to vibration treatment in the low-frequency vibration area and the ultrasonic vibration area in sequence. The device for eliminating the internal stress of the crystal ingot enables the crystal ingot to be subjected to low-frequency resonance aging treatment and ultrasonic treatment in sequence, wherein the low-frequency resonance aging treatment can release part of residual stress in the crystal ingot and homogenize the stress remaining in the crystal ingot, so that the point position with large internal stress of the crystal ingot is reduced or the stress at the point position is relieved, and the crystal ingot is effectively prevented from cracking due to the fact that the point position with large internal stress exists in the crystal ingot. Compared with the prior art, the device simple operation that this application provided, it is quick to handle to can show the elimination effect that promotes silicon carbide ingot internal stress.
Description
Technical Field
The application belongs to the technical field of ingot processing devices, and particularly relates to a device for eliminating internal stress of an ingot.
Background
When a silicon carbide crystal ingot is prepared by a Physical Vapor Transport (PVT) method, due to the difference of the setting of relevant parameters such as crystal growth temperature and pressure and the non-artificial change generated in the crystal growth process, the molecular orientation in the crystal is often changed, and further the internal stress of the crystal is caused. When the internal stress reaches the limit, the crystal can crack, which causes great obstacle to the subsequent mechanical processing.
The existing method for eliminating the internal stress of the silicon carbide crystal ingot is to realize the annealing of the crystal ingot by controlling the temperature in a growth furnace chamber to slowly drop after the crystal growth is finished, or to perform secondary annealing after the crystal ingot is discharged. However, the annealing method is not only long in time and large in energy consumption, but also has a limited stress relief effect.
Other methods for relieving internal stress are provided in the prior art, for example, patent CN103290482A provides a method for removing stress from large diameter silicon carbide single crystals by subjecting the silicon carbide crystal to ultrasonic treatment in air, water or silicon carbide powder using ultrasonic waves having a frequency greater than 20kHz, however, this method of directly using ultrasonic waves having such a large frequency tends to cause cracking of the ingot. In addition, vibration ageing equipment is mostly adopted in the mechanical field to carry out vibration stress relief on some large metal components, but in practice, the existing vibration ageing equipment is directly used for treating the silicon carbide crystal ingot, the period is long, the relief effect is not ideal, and the silicon carbide crystal ingot is small in size and light in weight compared with the large metal components, so that the silicon carbide crystal ingot is easy to move during vibration, and the operation is very inconvenient.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems, the present application provides an apparatus that is simple in operation, capable of rapidly removing internal stress of an ingot, and has a significant removal effect without causing cracking of the ingot, the apparatus comprising:
the vibration table is provided with a low-frequency vibration area and an ultrasonic vibration area, the vibration frequency of the low-frequency vibration area is less than 500Hz, the vibration frequency of the ultrasonic vibration area is greater than 20kHz, and the crystal ingot is subjected to vibration treatment in the low-frequency vibration area and the ultrasonic vibration area in sequence.
It is understood that the low-frequency vibration region is subjected to low-frequency vibration aging treatment, and the ultrasonic vibration region is subjected to ultrasonic vibration aging treatment. The internal stress eliminating device for the crystal ingot enables the crystal ingot to be subjected to low-frequency vibration aging treatment through a low-frequency vibration area with a lower frequency range before ultrasonic treatment, and the low-frequency resonance aging treatment plays a role in releasing residual stress in the part of the crystal ingot, more importantly, the residual stress in the crystal ingot can be homogenized, so that a point with larger internal stress of the crystal ingot is reduced or the stress at the point is relieved. Meanwhile, the arrangement of the ultrasonic vibration area in the device enables the device to achieve the effect of eliminating the internal stress with obvious ultrasonic vibration aging, and particularly after pretreatment and internal stress homogenization are carried out in the low-frequency vibration area, the effect of ultrasonic vibration treatment is further improved.
Further, the low-frequency vibration area comprises a first vibration cushion block, the ultrasonic vibration area comprises an ultrasonic water bath with an ultrasonic generator, a second vibration cushion block is arranged at the bottom of the ultrasonic water bath, and the first vibration cushion block and the second vibration cushion block are respectively connected with a vibration generator.
Further, the vibration generator is an exciter.
It will be appreciated that the first and second vibratory blocks are configured to carry and vibrate the crystal ingot and have a controllable or adjustable vibration frequency when in use.
The device with the arrangement can realize low-frequency vibration aging treatment on the crystal ingot through the vibration cushion block and carry out ultrasonic vibration aging treatment on the crystal ingot placed in the ultrasonic water bath through the ultrasonic generator. And a second vibrating cushion block is arranged in the ultrasonic water bath tank, so that the internal stress of the crystal ingot is simultaneously eliminated by ultrasonic in the homogenization process, and the elimination effect of the internal stress is further improved.
Optionally, the amount of water in the ultrasonic water bath is not less than two thirds of the volume of the water bath.
In one embodiment, the vibration generator is an exciter. In another embodiment, a vibration controller and a vibration sensor at the vibrating pad block can be further provided to control the on or off of the vibration exciter and the vibration frequency.
Further, the vibration frequency of the second vibrating cushion block is greater than that of the first vibrating cushion block.
Because the second cushion block is positioned in the ultrasonic water bath, the vibration wave can be absorbed by a small part under the environment of the water medium, and the arrangement ensures that the second cushion block can play a role in assisting in homogenizing the internal stress. Preferably, the vibration frequency of the second vibrating pad is at least 1000Hz higher than that of the first vibrating pad.
Further, the vibration frequency of the first vibrating cushion block is 50-400Hz, and the vibration frequency of the second vibrating cushion block is 1400-3200 Hz.
Further, ingot clamping grooves are formed in the surfaces of the first vibrating cushion block and the second vibrating cushion block respectively, and elastic cushions are arranged on the inner wall of each ingot clamping groove.
In one embodiment, the crystal ingot clamping groove can be directly arranged on the surface of the vibrating cushion block; in another embodiment, the upper surface of the vibrating pad is provided with a stage at which the ingot pocket is disposed.
The arrangement is favorable for fixing the crystal ingot on the surface of the vibrating cushion block and is more convenient to operate, and the crystal ingot is fixed, so that the vibration on the surface of the crystal ingot can be reduced, the vibration is more concentrated in the crystal ingot, and the vibration for internal stress is assisted; meanwhile, the elastic pad in the clamping groove can also play a role in protecting the crystal ingot, so that the crystal ingot is prevented from being collided and damaged.
Optionally, the elastic pad may be made of rubber, silica gel or latex.
And the control host is connected with the vibration generator and is provided with a display screen for displaying the vibration frequency of the first vibration cushion block and/or the second vibration cushion block.
Further, the device also comprises an air drying area, wherein the air drying area comprises an ingot placing frame and an air generator, and an air opening of the air generator faces the ingot placing frame.
Wherein, the air drying area can be used for carrying out air drying treatment on the crystal ingot after the water bath ultrasonic treatment is finished. Preferably, the wind generator is a hot wind generator, for example, using a heating wire and a blower.
Further, the device also comprises a fixing assembly, wherein the fixing assembly comprises a fixing rod, and the fixing rod can be lifted to abut against the surface of the crystal ingot when the crystal ingot is fixed.
Preferably, the end of the fixing rod for abutting against the ingot is also covered with an elastic pad.
Further, the ingot is a silicon carbide ingot.
Preferably, the silicon carbide ingot weighs at least 100 grams.
Further, the ingot is a silicon carbide ingot, and the vibration frequency of the first vibrating pad block is 50 to 400 Hz; the vibration frequency of the second vibration cushion block is 1400-3200 Hz.
Further, the vibration processing time of the first vibration cushion block and the second vibration cushion block is 3-30 min.
Further, the vibration treatment process of the silicon carbide crystal ingot by the first vibrating cushion block comprises the following steps: vibrating at 50-400Hz for 10-20min, and vibrating at 20-40Hz for 3-8 min; the vibration treatment process of the silicon carbide crystal ingot by the second vibrating cushion block comprises the following steps: firstly vibrating at 1400-3200Hz for 10-20min, and then vibrating at 200-300Hz for 3-8 min.
Further, the silicon carbide ingot is subjected to vibration treatment using the second vibrating pad block and ultrasonic vibration treatment.
In a preferred embodiment, the vibration frequencies of the first and second vibrating pads may also be adjusted according to the weight of the silicon carbide ingot to be processed.
Benefits that can be produced by the present application include, but are not limited to:
the device for eliminating the internal stress of the crystal ingot enables the crystal ingot to be subjected to low-frequency resonance aging treatment and ultrasonic treatment in sequence, wherein the low-frequency resonance aging treatment can release part of residual stress in the crystal ingot and homogenize the stress remaining in the crystal ingot so as to reduce the point position with larger internal stress of the crystal ingot or lighten the stress at the point position, thereby effectively preventing the crystal ingot from cracking and reducing loss due to the fact that the point position with larger internal stress exists in the crystal ingot. Compared with the prior art, the device simple operation that this application provided, it is quick to handle to can show the elimination effect that promotes silicon carbide ingot internal stress.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a schematic view of an apparatus for relieving stress in a crystal ingot;
in the figure: 1. fixing a rod stop block; 2. fixing the rod; 3. locking the screw rod; 4. an elastic sheet; 5. rotating the rotating shaft; 6. a lifting rod; 7. an ultrasonic water bath; 8. an ultrasonic generator; 9. a vibration table; 10. a first ingot clamping groove; 11. a first vibrating pad block; 12. a second ingot clamping groove; 13. a second vibrating pad block; 14. a control host; 15. a switch; 16. a display; 17. a power source; 18. a rubber pad; 19. an electric heating wire; 20. an air outlet; 21. a crystal ingot placing frame; 22. a crystal ingot; 23. a vibration exciter.
Detailed Description
In order to more clearly explain the overall concept of the present application, the following detailed description is given by way of example in conjunction with the accompanying drawings.
So that the manner in which the above recited objects, features and advantages of the present application can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, however, the present application may be practiced in other ways than those described herein, and therefore the scope of the present application is not limited by the specific embodiments disclosed below.
In addition, in the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on those shown in the drawings, are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The embodiment of the application provides a device for eliminating internal stress of a crystal ingot, the device is simple to operate, the internal stress of the crystal ingot can be quickly eliminated, the elimination effect is obvious, meanwhile, the crystal ingot can not be cracked, and the device is particularly suitable for a silicon carbide crystal ingot.
As shown in fig. 1, the apparatus includes: a vibration table 9 and a power supply 17 for controlling the energization. In the embodiment shown in fig. 1, the vibration table 9 is a support table for carrying components and has four support legs, which may be rubber-coated 18 at the bottom to prevent tipping, and in other embodiments, may be pulleys to facilitate movement of the vibration table 9.
Wherein, the vibration table 9 is provided with a low-frequency vibration area and an ultrasonic vibration area, the vibration frequency of the low-frequency vibration area is less than 500Hz, the vibration frequency of the ultrasonic vibration area is more than 20kHz, and the crystal ingot 22 is subjected to vibration treatment in the first vibration area and the second vibration area in sequence. As shown in fig. 1, a first vibrating pad 11 is disposed at the low frequency vibrating region, an ultrasonic water bath 7 having an ultrasonic generator 8 is disposed at the ultrasonic vibrating region, and a second vibrating pad 13 is disposed at the bottom inside the ultrasonic water bath 7, the first vibrating pad 11 and the second vibrating pad 13 being connected to the vibration generator, respectively. It will be appreciated that the first and second vibrating spacers 11, 13 are configured to carry and vibrate the crystal ingot 22 and can have a frequency of vibration when in use.
It is understood that in the device provided in the above embodiment, the low-frequency vibration region is subjected to low-frequency vibration aging treatment, and the ultrasonic vibration region is subjected to ultrasonic vibration aging treatment. The internal stress eliminating device of the crystal ingot enables the crystal ingot to be subjected to low-frequency vibration aging treatment through a low-frequency vibration area with a lower frequency range before ultrasonic treatment, and the low-frequency resonance aging treatment plays a role in releasing part of residual stress in the crystal ingot, more importantly, can also homogenize the stress remaining in the crystal ingot so as to reduce a point with larger internal stress of the crystal ingot or lighten the stress at the point, which is equivalent to preprocessing the crystal ingot, and can effectively prevent the crystal ingot from cracking caused by the point with larger internal stress of the crystal ingot compared with a mode of directly using ultrasonic treatment. Meanwhile, the arrangement of the ultrasonic vibration area in the device enables the device to achieve the effect of eliminating the internal stress with obvious ultrasonic vibration aging, and particularly after pretreatment and internal stress homogenization are carried out in the low-frequency vibration area, the effect of ultrasonic vibration treatment is further improved.
In the embodiment shown in fig. 1, the surfaces of the first and second vibrating pads 11 and 13 are configured to carry the ingot. For example, a first ingot clamping groove 10 is formed in the upper surface of the first vibrating cushion block 11, and a second ingot clamping groove 12 is formed in the upper surface of the second vibrating cushion block 13; or an object stage is arranged above each vibrating cushion block, and the ingot clamping groove is arranged at the object stage; alternatively, the first and second vibrating pads 11 and 13 may be installed at the lower side of the table of the vibrating table 9, respectively, and the ingot catching grooves one 10 and two 12 may be installed at the upper side of the table of the vibrating table 9, corresponding to the first and second vibrating pads 11 and 12, respectively.
The vibration generator adopts a vibration exciter 23, the vibration exciter 23 is respectively connected with the first vibration cushion block 11 and the second vibration cushion block 13, meanwhile, a vibration sensor can be attached to each vibration cushion block, the vibration frequency is transmitted to the control host 14, so that the vibration exciter 23 can be controlled to be turned on or turned off and the vibration frequency, meanwhile, the vibration exciter 23 is also connected with the control host 14, and the vibration generation is controlled to be stopped through the control host 14.
Preferably, crystal ingot clamping grooves are formed in the surfaces of the first vibrating cushion block 11 and the second vibrating cushion block 13, and elastic pads are arranged on the inner walls of the crystal ingot clamping grooves. The arrangement is favorable for fixing the crystal ingot on the surface of the vibrating cushion block and is more convenient to operate, and the crystal ingot is fixed, so that the vibration on the surface of the crystal ingot can be reduced, the vibration is more concentrated in the crystal ingot, and the vibration for internal stress is assisted; meanwhile, the elastic pad in the clamping groove can also play a role in protecting the crystal ingot, so that the crystal ingot is prevented from being collided and damaged.
Optionally, the elastic pad may be made of rubber, silica gel or latex.
The device with the arrangement can realize low-frequency vibration aging treatment on the crystal ingot through the vibration cushion block, and can realize ultrasonic vibration aging treatment on the crystal ingot placed in the ultrasonic water bath 7 through the ultrasonic generator 8. And a second vibrating cushion block 13 is arranged in the ultrasonic water bath 7, so that the internal stress of the crystal ingot is simultaneously eliminated by ultrasonic in the homogenization process, and the elimination effect of the internal stress is further improved.
In one embodiment, elastic pads may be further disposed on the inner walls of the first and second slots 10 and 12 to protect the ingot. In one embodiment, the control host 14 may be a multi-function control device provided in the prior art, as shown in FIG. 1, which may have a display screen 16 and a plurality of switches 15 thereon.
Wherein, the ultrasonic water bath 7 is provided with an existing ultrasonic generator, such as a piezoelectric ceramic transducer which is mainly made of piezoelectric ceramic material, two positive and negative electrode plates are arranged on the two piezoelectric ceramic transducers, a sine alternating current is applied to the positive and negative electrode plates, and the piezoelectric material can expand and contract with sine change length to form ultrasonic waves which are emitted outwards.
Wherein, because second vibrating cushion block 13 is located ultrasonic wave water bath 7, the vibration wave can be absorbed by a small part under the environment of aqueous medium, so set up in order to guarantee that second vibrating cushion block 13 can play the effect of assisting homogenization internal stress. Preferably, the amount of water in the ultrasonic water bath 7 is not less than two thirds of the volume of the water bath.
In a preferred embodiment, the second vibrating pad 13 has a higher vibration frequency than the first vibrating pad 11 in order to ensure a vibrating effect in the water bath. More preferably, the vibration frequency of the second vibratory pad 13 is at least 1000Hz greater than the vibration frequency of the first vibratory pad 11.
As shown in fig. 1, the apparatus further comprises an air drying zone comprising an ingot holding frame 21 and an air generator having an air outlet 20 directed toward the ingot holding frame 21. Wherein the seasoning area may be used to season ingot 22 after it has been subjected to water bath sonication. Preferably, the wind generator is a hot wind generator, for example using a heating wire 19 and a blower.
With continued reference to fig. 1, the apparatus further includes a fixing assembly including a fixing rod 2, and the fixing rod 2 is liftable to abut against the surface of the ingot when fixing the ingot, preventing the ingot 22 from deviating from the vibration region due to vibration. Preferably, one end of the fixing rod 2, which is used for abutting against the ingot, is also covered with the elastic sheet 4, and the material of the elastic sheet 4 may also be rubber, silica gel, latex, etc. to further protect the ingot 22. As shown in fig. 1, the fixing assembly further includes a rotation shaft 5 which is horizontally rotatable by 360 ° and locks the fixing lever 2 by the locking screw 3, and a lifting lever 6 for controlling lifting, and in particular, the operation of adjusting the height position and the horizontal position of the fixing lever 2 may be similar to that of a related art iron stand.
In a preferred embodiment, ingot 22 is a silicon carbide ingot. More preferably, the silicon carbide ingot weighs at least 100 grams. And, when the ingot 22 is a silicon carbide ingot, the vibration frequency of the first vibrating pad 11 is 50-400Hz, and the vibration processing time is 3-30 min; the vibration frequency of the second vibrating pad 13 is 1400-3200Hz, and the vibration processing time is 3-30 min. In a preferred embodiment, the vibration frequencies of the first and second vibrating pads 11 and 13 may also be adjusted according to the weight of the silicon carbide ingot to be processed.
In one embodiment, the vibration treatment of the silicon carbide ingot by the first vibrating pad 11 comprises: vibrating at 50-400Hz for 10-20min, and vibrating at 20-40Hz for 3-8 min; the vibration treatment process of the silicon carbide crystal ingot by the second vibrating cushion block 13 comprises the following steps: firstly vibrating at 1400-3200Hz for 10-20min, and then vibrating at 200-300Hz for 3-8 min.
In one embodiment, the method of using the apparatus is as follows:
The embodiment of the present application further provides vibration frequency control parameters of the first vibrating pad block 11 and the second vibrating pad block 13 when internal stress of the silicon carbide ingot in each mass interval is eliminated, specifically as follows:
first vibrating pad 11:
second vibrating pad 13:
wherein the frequency of the ultrasonic aging treatment is 20kHz-30 kHz.
Randomly selecting two hundred silicon carbide crystal ingots with equal mass, carrying out internal stress elimination treatment by using the device provided by the embodiment, and carrying out calculation, analysis and comparison;
and the group I is 100 silicon carbide crystal ingots subjected to random sampling, the device is not used for internal stress relief treatment, the number of cracks after slicing is 14, and the cracking rate is calculated: x1-14/100-14%.
And the second group is 100 silicon carbide crystal ingots subjected to random sampling, and the silicon carbide crystal ingots are processed and sliced after internal stress elimination treatment by using the device, wherein the number of cracks is 1, and the cracking rate is calculated to obtain: x2-1/100-1%.
Two sets of experiments are all random sampling, and are carried out under the error of getting rid of the manual cutting error, and in the middle of the artificial error leads to the all recalculation of fracture crystal, random sampling again is carried out the experiment. According to calculation, the cracking rate of the crystal is obviously reduced to 14 blocks of cracking loss about 140w and 1 block of cracking loss about 10w according to the product selling price, and the economic loss of the same proportion can be found, so that the cracking rate of the crystal treated by the vibration device is obviously reduced, the profit loss is greatly reduced, and the enterprise income rate is improved.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (5)
1. An apparatus for relieving stress in a crystal ingot, comprising:
the vibration table is provided with a low-frequency vibration area and an ultrasonic vibration area, the vibration frequency of the low-frequency vibration area is less than 500Hz, and the vibration frequency of the ultrasonic vibration area is more than 20kHz, so that the crystal ingot can be subjected to vibration treatment in the low-frequency vibration area and the ultrasonic vibration area in sequence;
the low-frequency vibration area comprises a first vibration cushion block;
the ultrasonic vibration region comprises an ultrasonic water bath with an ultrasonic generator, a second vibration cushion block is arranged at the bottom of the ultrasonic water bath, and the first vibration cushion block and the second vibration cushion block are respectively connected with the vibration generator;
ingot clamping grooves are respectively formed in the surfaces of the first vibrating cushion block and the second vibrating cushion block, and elastic pads are arranged on the inner walls of the ingot clamping grooves;
the vibration generator is connected with the vibration generator, and a display screen for displaying the vibration frequency of the first vibration cushion block and/or the second vibration cushion block is arranged on the control host.
2. An apparatus for relieving stress in an ingot as set forth in claim 1, wherein the vibration generator is an exciter.
3. An apparatus for relieving stress in an ingot as set forth in claim 1, further comprising an air drying zone including an ingot holding frame and an air generator having an air port directed toward the ingot holding frame.
4. An apparatus for relieving stress in an ingot as set forth in claim 1, further comprising a fixing assembly including a liftable fixing rod which abuts the surface of the ingot when the ingot is fixed.
5. An apparatus for relieving stress in an ingot as set forth in any one of claims 1 to 4 wherein the ingot is a silicon carbide ingot.
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| CN202021885273.6U CN213835629U (en) | 2020-09-01 | 2020-09-01 | Device for eliminating internal stress of crystal ingot |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114250520A (en) * | 2021-12-24 | 2022-03-29 | 安徽光智科技有限公司 | Method for reducing diamond stress |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114250520A (en) * | 2021-12-24 | 2022-03-29 | 安徽光智科技有限公司 | Method for reducing diamond stress |
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