CN213782017U

CN213782017U - Semiconductor structure

Info

Publication number: CN213782017U
Application number: CN202022539624.4U
Authority: CN
Inventors: 颜逸飞; 冯立伟
Original assignee: Fujian Jinhua Integrated Circuit Co Ltd
Current assignee: Fujian Jinhua Integrated Circuit Co Ltd
Priority date: 2020-11-04
Filing date: 2020-11-04
Publication date: 2021-07-23
Anticipated expiration: 2030-11-04

Abstract

The utility model provides a semiconductor structure, wherein an active area extending along a first preset direction is formed in a substrate, and the active area extends from the surface of the substrate to a first set depth position of the substrate; a plurality of word line structures located in the substrate and extending along a second predetermined direction to pass through respective active regions, the word line structures extending from the surface of the substrate to a second set depth position of the substrate, the second set depth position being lower than the first set depth position; a plurality of auxiliary doped regions are located in the substrate and surround corresponding word line structures, each of the auxiliary doped regions being located between the first set depth position and the second set depth position. Therefore, the auxiliary doping region can be utilized to improve the leakage current phenomenon between the word line structure and the active region.

Description

Semiconductor structure

Technical Field

The utility model relates to the field of semiconductor technology, especially, relate to a semiconductor structure.

Background

As the size of semiconductor devices continues to shrink, the feature sizes of individual components in the semiconductor devices also shrink rapidly, and the spacing between adjacent individual components also gets closer and closer. Thus, the leakage current between adjacent devices is very easily caused.

Particularly, for a Memory (for example, a Dynamic Random Access Memory), with the continuous reduction of the Memory size, a leakage current phenomenon easily occurs between a word line structure buried in a substrate and an adjacent active region.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a semiconductor structure to solve the problem that the leakage current phenomenon will appear easily between word line structure and the adjacent active area.

In order to achieve the above object, the present invention provides a semiconductor structure, including:

the device comprises a substrate, a first electrode, a second electrode and a third electrode, wherein an active region extending along a first preset direction is formed in the substrate, and the bottom of the active region is located at a first set depth position of the substrate;

a plurality of word line structures located in the substrate and extending along a second predetermined direction to pass through the respective active regions, the bottom of the word line structures being located at a second set depth position of the substrate, the second set depth position being lower than the first set depth position; and the number of the first and second groups,

a plurality of auxiliary doped regions in the substrate and surrounding corresponding word line structures, each auxiliary doped region being located between the first set depth position and the second set depth position.

Optionally, a distance between the top of the auxiliary doping region and the corresponding word line structure is smaller than a distance between the bottom of the auxiliary doping region and the corresponding word line structure.

Optionally, the doping concentration of the auxiliary doping region is higher than that of the active region.

Optionally, the doping type of the auxiliary doping region is the same as the doping type of the active region.

Optionally, the substrate has a plurality of word line trenches, the word line structures are located in the corresponding word line trenches, each word line structure includes a gate oxide layer, a gate conductive layer and two gate dielectric layers, the gate oxide layer covers the inner walls of the word line trenches, the gate conductive layer is located on the gate oxide layer and fills a part of the depth of the word line trenches, and the two gate dielectric layers cover the gate conductive layer and fill the remaining depth of the word line trenches after being stacked.

Optionally, the two gate dielectric layers are a first gate dielectric layer and a second gate dielectric layer, the first gate dielectric layer is closer to the gate conductive layer than the second gate dielectric layer, and a work function adjusting layer is further disposed between the gate conductive layer and the first gate dielectric layer.

Optionally, the two gate dielectric layers are a first gate dielectric layer and a second gate dielectric layer, respectively, the first gate dielectric layer is closer to the gate conductive layer than the second gate dielectric layer, and a work function adjusting layer is further disposed between the first gate dielectric layer and the second gate dielectric layer.

Optionally, the word line structure further includes a word line sidewall, and the word line sidewall wraps sidewalls of the second gate dielectric layer and the work function adjusting layer.

Optionally, the work function adjusting layer is made of polysilicon or amorphous silicon.

Optionally, the two gate dielectric layers are made of one or more of silicon oxide, silicon nitride, or silicon oxynitride.

In a semiconductor structure provided by the present invention, an active region extending in a first predetermined direction is formed in a substrate, the active region extending from a surface of the substrate to a first set depth position of the substrate; a plurality of word line structures located in the substrate and extending along a second predetermined direction to pass through respective active regions, the word line structures extending from the surface of the substrate to a second set depth position of the substrate, the second set depth position being lower than the first set depth position; a plurality of auxiliary doped regions are located in the substrate and surround corresponding word line structures, each of the auxiliary doped regions being located between the first set depth position and the second set depth position. Therefore, the auxiliary doping region can be utilized to improve the leakage current phenomenon between the word line structure and the active region.

Drawings

Fig. 1 is a flowchart of a method for fabricating a semiconductor structure according to an embodiment of the present invention;

fig. 2a to fig. 2f are schematic structural diagrams corresponding to a corresponding flow of a method for manufacturing a semiconductor structure according to an embodiment of the present invention, wherein fig. 2f is a schematic structural diagram of a semiconductor structure according to an embodiment of the present invention;

fig. 3a to fig. 3d are schematic structural diagrams corresponding to respective flows of a method for manufacturing a semiconductor structure provided by the second embodiment of the present invention, wherein fig. 3d is a schematic structural diagram of a semiconductor structure provided by the second embodiment of the present invention;

fig. 4a to fig. 4e are schematic structural diagrams corresponding to a corresponding flow of a method for manufacturing a semiconductor structure provided by the second embodiment of the present invention, wherein fig. 4e is a schematic structural diagram of a semiconductor structure provided by the third embodiment of the present invention;

fig. 5a to fig. 5e are schematic structural diagrams corresponding to a corresponding flow of a method for manufacturing a semiconductor structure provided by the second embodiment of the present invention, wherein fig. 5e is a schematic structural diagram of a semiconductor structure provided by the fourth embodiment of the present invention;

fig. 6a to fig. 6e are schematic structural diagrams corresponding to a corresponding flow of a method for manufacturing a semiconductor structure provided by the second embodiment of the present invention, wherein fig. 6e is a schematic structural diagram of a semiconductor structure provided by the fifth embodiment of the present invention;

wherein the reference numerals are:

100-a substrate; 101-an active region; 102-auxiliary doped region; 200 a-gate oxide layer; 200 b-work function layer; 200 c-a gate conductive layer; 200 d-a first gate dielectric layer; 200 e-a second gate dielectric layer; 200 f-work function adjusting layer; 200 g-word line sidewall; 300-a passivation layer;

WL1 — first word line structure; WL2 — second word line structure; STI-shallow trench isolation structure;

h1 — first set depth position; h2, H2' -second set depth position.

Detailed Description

The following description of the embodiments of the present invention will be described in more detail with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.

Example one

Fig. 2f is a schematic structural diagram of the semiconductor structure in this embodiment. As shown in fig. 2f, the semiconductor structure comprises: a substrate 100 and a wordline structure formed in the substrate 100.

The substrate 100 has a plurality of active regions 101 and shallow trench isolation structures STI formed therein, and the shallow trench isolation structures STI are used to separate adjacent active regions 101. The active regions 101 are arranged in an array manner and extend along a first predetermined direction, and the active regions 101 are independent from each other through the shallow trench isolation structures STI, so that mutual interference between the active regions 101 is avoided. The bottom of the active region 101 is located at a first set depth position H1 of the substrate 100.

Further, a word line trench is formed in the substrate 100, and the word line trench is used for accommodating the word line structure. Specifically, the word line trench extends along a second predetermined direction to pass through the corresponding active region 101 and shallow trench isolation structure STI, and a portion of the word line trench is located in the active region 101 and another portion of the word line trench is located in the shallow trench isolation structure STI. For convenience of description, the word line trench in the shallow trench isolation STI is referred to as a first word line trench, and the word line trench in the active region 101 is referred to as a second word line trench.

In this embodiment, the opening size of the first word line trench is larger than the opening size of the second word line trench. Further, the bottom of the first word line trench is also located lower than the bottom of the second word line trench. Referring specifically to fig. 2f, the first wordline trench extends from the surface of the substrate 100 to a second set depth position H2 of the substrate 100, the second wordline trench extends from the surface of the substrate 100 to a second set depth position H2 'of the substrate 100, the second set depth position H2 is lower than the second set depth position H2'.

With continued reference to fig. 2f, the word line structure is located in the word line trench, and includes a gate oxide layer 200a, a work function layer 200b, a gate conductive layer 200c, and a second gate dielectric layer 200 e. The gate oxide layer 200a covers the inner wall of the word line groove; the work function layer 200b is located on the gate oxide layer 200a, the gate conductive layer 200c is located on the work function layer 200b, the work function layer 200b and the gate conductive layer 200c together fill a partial depth of the word line trench, and the second gate dielectric layer 200e is located on the gate conductive layer 200c and fills a remaining depth of the word line trench.

In this embodiment, the gate oxide layer 200a is made of one or more of silicon oxide, silicon oxynitride, and silicon oxycarbide, the work function layer 200b is made of a metal material such as titanium nitride, titanium aluminum, titanium carbide, or titanium tungsten, the gate conductive layer 200c is made of polysilicon or tungsten, and the second gate dielectric layer 200e is made of one or more of silicon oxide, silicon nitride, and silicon oxynitride, but the disclosure is not limited thereto.

As described above, in the present embodiment, since the word line trench is divided into the first word line trench and the second word line trench, the word line structure in the first word line trench is referred to as the first word line structure WL1, and the word line structure in the second word line trench is referred to as the second word line structure WL 2. And, since the bottom of the first word line trench is located lower than the bottom of the second word line trench, the bottom of the first word line structure WL1 is located lower than the bottom of the second word line structure WL 2. Referring specifically to fig. 2f, the first wordline structure WL1 extends from the surface of the substrate 100 to a second set depth position H2 of the substrate 100, and the second first wordline structure WL1 extends from the surface of the substrate 100 to a second set depth position H2' of the substrate 100.

As described above, the word line trench passes through the corresponding active region 101 and shallow trench isolation STI, and thus the word line structure also passes through the corresponding active region 101 and shallow trench isolation STI.

With continued reference to fig. 2f, a plurality of auxiliary doping regions 102 are further formed in the substrate 100, the auxiliary doping regions 102 correspond to the word line structures one to one, and each auxiliary doping region 102 surrounds the corresponding word line structure. Further, the auxiliary doped region 102 is also located between the first set depth position H1 and the second set depth position H2, H2 ', that is, the top of the auxiliary doped region 102 is lower than the first set depth position H1, and the bottom of the auxiliary doped region 102 is lower than the second set depth position H2, H2'.

Each auxiliary doping region 102 is annular when viewed from the top of the semiconductor structure, so that the corresponding word line structure can be surrounded inside, and due to the isolation effect of the auxiliary doping region 102, a leakage current (GIDL) phenomenon between the word line structure and the active region 101 can be effectively relieved, and then the leakage current phenomenon of the semiconductor structure is relieved, so that the overall performance of the memory transistor is further improved.

Further, the auxiliary doping region 102 is formed through a tilted ion implantation process, thereby also assuming a tilted state in the substrate 100. In this embodiment, the distance between the top of the auxiliary doping region 102 and the corresponding word line structure is smaller than the distance between the bottom of the auxiliary doping region 102 and the corresponding word line structure, so that the auxiliary doping region 102 is inclined outwards in a shape of "eight", thereby increasing the isolation effect while the occupied area of the auxiliary doping region 102 is increased, and further ensuring that the area of the semiconductor structure is not increased too much.

Further, the doping type of the auxiliary doping region 102 is the same as the doping type of the active region 101, and the doping concentration of the auxiliary doping region 102 is higher than the doping concentration of the active region 101, so as to ensure that the doping ions in the auxiliary doping region 102 do not flow out randomly, and to improve the leakage current phenomenon between the word line structure and the active region 101.

With continued reference to fig. 2f, a passivation layer 300 is further formed on the substrate 100, and the passivation layer 300 covers the surface of the substrate 100 and the top of the word line structure, thereby protecting the word line structure. Optionally, the passivation layer 300 may be a single-layer film, or may be a composite structure layer formed by at least two layers of films.

Based on the semiconductor structure as described above, a method for manufacturing the semiconductor structure in this embodiment will be described in detail below. Fig. 1 is a flowchart of a method for manufacturing a semiconductor structure according to this embodiment. As shown in fig. 1, the steps of the method for manufacturing a semiconductor structure include:

step S100: providing a substrate, wherein an active region extending along a first preset direction is formed in the substrate, and the bottom of the active region is positioned at a first set depth position of the substrate; and the number of the first and second groups,

step S200: forming a plurality of word line structures and a plurality of auxiliary doped regions in the substrate, the word line structures extending along a second predetermined direction to pass through the respective active regions, the bottom of the word line structures being located at a second set depth position of the substrate, the second set depth position being lower than the first set depth position, the auxiliary doped regions surrounding the corresponding word line structures and both being located between the first set depth position and the second set depth position.

The following detailed description is made with reference to fig. 2a to 2f, wherein fig. 2a to 2f are schematic structural views of the method for manufacturing a semiconductor structure in the present embodiment during the manufacturing process thereof.

Referring first to fig. 2a, step S100 is performed to provide a substrate 100, wherein the substrate 100 is formed with a shallow trench isolation STI structure, and a plurality of active regions 101 are defined by the shallow trench isolation STI structure, and a bottom of the active regions 101 is located at a first set depth position H1 of the substrate 100 and extends along a first predetermined direction.

Step S200 is performed to form a word line trench in the substrate 100, wherein the bottom position of the word line trench is located at a second set depth position (H2/H2 ') of the substrate 100, and specifically, a portion of the word line trench (the word line trench located in the shallow trench isolation STI) is located at the second set depth position H2, and a portion of the word line trench (the word line trench located in the active region 101) is located at the second set depth position H2'.

The word line trenches are accommodated to form word line structures in a subsequent step, so that the word line trenches extend along the second predetermined direction, respectively, and pass through the respective active regions 101 and shallow trench isolation structures STI. Further, the opening size of the word line trench in the active region 101 is smaller than the opening size of the word line trench in the shallow trench isolation STI.

Next, referring to fig. 2b, a gate oxide layer 200a is formed in the word line trench, the gate oxide layer 200a covering the inner wall of the word line trench. The gate oxide Layer 200a may be formed by a Deposition process, and specifically may be formed by an Atomic Layer Deposition (ALD) process.

Referring next to fig. 2c, a work function layer 200b and a gate conductive layer 200c are formed in the word line trench, the work function layer 200b is located on the gate oxide layer 200a, the work function layer 200b is located on the gate conductive layer 200c, and the work function layer 200b and the gate conductive layer 200c together fill a partial depth of the word line trench.

Specifically, the step of forming the work function layer 200b and the gate conductive layer 200c includes: forming a work function material layer and a gate conductive material layer in the word line trench in sequence, and then etching back the gate conductive material layer and the work function material layer in sequence, so that the tops of the formed work function layer 200b and the gate conductive layer 200c are lower than the top opening of the word line trench.

In this embodiment, when the work function material layer and the gate conductive material layer are etched back, the etch-back depth of the work function material layer is greater than the etch-back depth of the gate conductive material layer, so that the top of the work function layer 200b is lower than the top of the gate conductive layer 200 c.

Referring to fig. 2d, a second gate dielectric layer 200e is filled in the space where the word line trench is higher than the gate conductive layer 200c to cover the gate conductive layer 200c and the work function layer 200b, so that the second gate dielectric layer 200e fills the remaining depth of the word line trench.

The gate oxide layer 200a, the work function layer 200b, the gate conductive layer 200c and the second gate dielectric layer 200e together form the word line structure.

Referring next to fig. 2e, a tilted ion implantation process is performed on the substrate 100 below the bottom of the active region 101 and above the bottom of the wordline structure, so as to form an auxiliary doped region 102 in the substrate 100. It should be understood that the auxiliary doped regions 102 are located between the first set depth position H1 and the second set depth positions H2, H2', and each auxiliary doped region 102 surrounds the corresponding word line structure, thereby preventing the leakage current phenomenon between the word line structure and the active region 101 from being improved.

Referring next to fig. 2f, a passivation layer 300 is formed on the substrate 100, the passivation layer 300 covering the substrate 100 and the top of the word line structure, thereby protecting the word line structure.

Example two

Fig. 3d is a schematic structural diagram of the semiconductor structure provided in this embodiment. As shown in fig. 3d, the difference from the first embodiment is that, in this embodiment, the word line structure includes two gate dielectric layers, and the two gate dielectric layers are stacked to cover the gate conductive layer 200c and fill the remaining depth of the word line trench.

With continued reference to fig. 2d, the word line structure includes a gate oxide layer 200a, a gate conductive layer 200c, a first gate dielectric layer 200d, and a second gate dielectric layer 200 e. The gate oxide layer 200a covers the inner wall of the word line groove; the work function layer 200b is located on the gate oxide layer 200a, the gate conductive layer 200c is located on the work function layer 200b, the work function layer 200b and the gate conductive layer 200c fill a partial depth of the word line trench together, the first gate dielectric layer 200d and the second gate dielectric layer 200e cover the gate conductive layer 200c and fill a remaining depth of the word line trench after being stacked, and the first gate dielectric layer 200d is closer to the gate conductive layer 200c than the second gate dielectric layer 200 e.

In this embodiment, the first gate dielectric layer 200d and the second gate dielectric layer 200e are made of the same material, and are one or more of silicon oxide, silicon nitride, or silicon oxynitride.

Fig. 3a to 3d are schematic structural diagrams of the method for manufacturing a semiconductor structure in the present embodiment during the manufacturing process thereof. The difference from the first embodiment is that, in this embodiment, after the gate oxide layer 200a, the work function layer 200b, and the gate conductive layer 200c are formed in the word line trench, the following steps are performed:

referring to fig. 3a, the first gate dielectric layer 200d is filled in the space where the word line trench is higher than the gate conductive layer 200c to cover the gate conductive layer 200c and the work function layer 200b, and the first gate dielectric layer 200d fills a partial depth of the word line trench. After the first gate dielectric layer 200d is formed, the top of the first gate dielectric layer 200d is still lower than the top opening of the word line trench, that is, the word line trench is not filled with the first gate dielectric layer 200 d.

Referring to fig. 3b, the substrate 100 below the bottom of the active region 101 and above the bottom of the wordline structure is subjected to an angled ion implantation process to form an auxiliary doped region 102 in the substrate 100. It is understood that the auxiliary doped region 102 is located between the first set depth position H1 and the second set depth position H2, H2'. Since the top of the gate conductive layer 200c and the top of the work function layer 200b are blocked by the first gate dielectric layer 200d, when the auxiliary doped region 102 is formed by the tilted ion implantation process, the gate conductive layer 200c and the work function layer 200b are not adversely affected.

Referring to fig. 3c, the second gate dielectric layer 200e is filled in the space where the word line trench is higher than the first gate dielectric layer 200d to cover the first gate dielectric layer 200d, and the second gate dielectric layer 200e fills the remaining depth of the word line trench. After the second gate dielectric layer 200e is formed, the top of the second gate dielectric layer 200e is flush with the top opening of the word line trench, that is, the word line trench is filled with the second gate dielectric layer 200 e.

The gate oxide layer 200a, the work function layer 200b, the gate conductive layer 200c, the first gate dielectric layer 200d, and the second gate dielectric layer 200e together form the word line structure.

Referring next to fig. 3d, a passivation layer 300 is formed on the substrate 100, and the passivation layer 300 covers the substrate 100 and the top of the word line structure, thereby protecting the word line structure.

EXAMPLE III

Fig. 4e is a schematic structural diagram of the semiconductor structure provided in this embodiment. As shown in fig. 4e, the difference from the second embodiment is that, in this embodiment, the word line structure further includes a work function adjusting layer 200f, the work function adjusting layer 200f is located between the gate conductive layer 200c and the first gate dielectric layer 200d, and the work function adjusting layer 200f can adjust the work function of the semiconductor structure, so as to increase the stability of the semiconductor structure.

With continued reference to fig. 4e, the word line structure includes a gate oxide layer 200a, a gate conductive layer 200c, a work function adjustment layer 200f, a first gate dielectric layer 200d, and a second gate dielectric layer 200 e. The gate oxide layer 200a covers the inner wall of the word line groove; the work function layer 200b is located on the gate oxide layer 200a, the gate conductive layer 200c is located on the work function layer 200b, the work function layer 200b and the gate conductive layer 200c fill a part of the depth of the word line trench together, the work function adjusting layer 200f, the first gate dielectric layer 200d and the second gate dielectric layer 200e are stacked in sequence, then cover the gate conductive layer 200c and fill the remaining depth of the word line trench, in addition, the work function adjusting layer 200f is closer to the gate conductive layer 200c than the second gate dielectric layer 200e, and the first gate dielectric layer 200d is located between the work function adjusting layer 200f and the second gate dielectric layer 200 e.

In this embodiment, the work function adjusting layer 200f is made of polysilicon or amorphous silicon.

Fig. 4a to 4e are schematic structural diagrams of the method for manufacturing a semiconductor structure in this embodiment in the manufacturing process thereof. The difference from the second embodiment is that, in this embodiment, after the gate oxide layer 200a, the work function layer 200b, and the gate conductive layer 200c are formed in the word line trench, the following steps are performed:

referring to fig. 4a, the work function adjusting layer 200f is filled in a space where the word line trench is higher than the gate conductive layer 200c to cover the gate conductive layer 200c and the work function layer 200b, and the work function adjusting layer 200f fills a partial depth of the word line trench. After the work function adjusting layer 200f is formed, the top of the work function adjusting layer 200f is still lower than the top opening of the word line trench, i.e., the work function adjusting layer 200f does not fill the word line trench.

Referring to fig. 4b, the first gate dielectric layer 200d is filled in the space where the word line trench is higher than the work function adjusting layer 200f to cover the work function adjusting layer 200f, and the first gate dielectric layer 200d fills a partial depth of the word line trench. After the first gate dielectric layer 200d is formed, the top of the first gate dielectric layer 200d is still lower than the top opening of the word line trench, that is, the word line trench is not filled with the first gate dielectric layer 200 d.

Referring to fig. 4c, the substrate 100 below the bottom of the active region 101 and above the bottom of the word line structure is subjected to an oblique ion implantation process, so as to form an auxiliary doped region 102 in the substrate 100. It is understood that the auxiliary doped region 102 is located between the first set depth position H1 and the second set depth position H2, H2'. Since the gate conductive layer 200c, the work function layer 200b, and the work function adjusting layer 200f are blocked by the first gate dielectric layer 200d at the top, when the auxiliary doping region 102 is formed by an oblique ion implantation process, the gate conductive layer 200c, the work function layer 200b, and the work function adjusting layer 200f are not adversely affected.

Referring to fig. 4d, the second gate dielectric layer 200e is filled in the space where the word line trench is higher than the first gate dielectric layer 200d to cover the first gate dielectric layer 200d, and the second gate dielectric layer 200e fills the remaining depth of the word line trench. After the second gate dielectric layer 200e is formed, the top of the second gate dielectric layer 200e is flush with the top opening of the word line trench, that is, the word line trench is filled with the second gate dielectric layer 200 e.

The gate oxide layer 200a, the work function layer 200b, the gate conductive layer 200c, the work function adjusting layer 200f, the first gate dielectric layer 200d and the second gate dielectric layer 200e together form the word line structure.

Referring next to fig. 4e, a passivation layer 300 is formed on the substrate 100, and the passivation layer 300 covers the substrate 100 and the top of the word line structure, thereby protecting the word line structure.

Example four

Fig. 5e is a schematic structural diagram of the semiconductor structure provided in this embodiment. As shown in fig. 5e, the difference from the second embodiment is that, in this embodiment, the word line structure further includes a work function adjusting layer 200f, the work function adjusting layer 200f is located between the first gate dielectric layer 200d and the second gate dielectric layer 200e, and the work function adjusting layer 200f can adjust the work function of the semiconductor structure, so as to increase the stability of the semiconductor structure.

With continued reference to fig. 5e, the word line structure includes a gate oxide layer 200a, a gate conductive layer 200c, a first gate dielectric layer 200d, a work function adjusting layer 200f, and a second gate dielectric layer 200 e. The gate oxide layer 200a covers the inner wall of the word line groove; the work function layer 200b is located on the gate oxide layer 200a, the gate conductive layer 200c is located on the work function layer 200b, the work function layer 200b and the gate conductive layer 200c fill a partial depth of the word line trench together, the first gate dielectric layer 200d, the work function adjusting layer 200f and the second gate dielectric layer 200e are stacked in sequence, then cover the gate conductive layer 200c and fill the remaining depth of the word line trench, in addition, the work function adjusting layer 200f is closer to the gate conductive layer 200c than the second gate dielectric layer 200e, and the work function adjusting layer 200f is located between the first gate dielectric layer 200d and the second gate dielectric layer 200 e.

Fig. 5a to 5e are schematic structural views of the method for manufacturing a semiconductor structure in this embodiment in the manufacturing process thereof. The difference from the second embodiment is that, in this embodiment, after the gate oxide layer 200a, the work function layer 200b, and the gate conductive layer 200c are formed in the word line trench, the following steps are performed:

referring to fig. 5a, the first gate dielectric layer 200d is filled in the space where the word line trench is higher than the work function adjusting layer 200f to cover the gate conductive layer 200c and the work function layer 200b, and the first gate dielectric layer 200d fills a partial depth of the word line trench. After the first gate dielectric layer 200d is formed, the top of the first gate dielectric layer 200d is still lower than the top opening of the word line trench, that is, the word line trench is not filled with the first gate dielectric layer 200 d.

Referring to fig. 5b, the substrate 100 below the bottom of the active region 101 and above the bottom of the word line structure is subjected to an oblique ion implantation process, so as to form an auxiliary doped region 102 in the substrate 100. It is understood that the auxiliary doped region 102 is located between the first set depth position H1 and the second set depth position H2, H2'. Since the top of the gate conductive layer 200c and the work function layer 200b is blocked by the first gate dielectric layer 200d, when the auxiliary doped region 102 is formed by an oblique ion implantation process, the gate conductive layer 200c, the work function layer 200b, and the work function adjusting layer 200f are not adversely affected.

Referring to fig. 5c, the work function adjusting layer 200f is filled in the space where the word line trench is higher than the first gate dielectric layer 200d to cover the first gate dielectric layer 200d, and the work function adjusting layer 200f fills a partial depth of the word line trench. After the work function adjusting layer 200f is formed, the top of the work function adjusting layer 200f is still lower than the top opening of the word line trench, i.e., the work function adjusting layer 200f does not fill the word line trench.

Referring to fig. 5d, the second gate dielectric layer 200e is filled in the space where the word line trench is higher than the work function adjusting layer 200f to cover the work function adjusting layer 200f, and the second gate dielectric layer 200e fills the remaining depth of the word line trench. After the second gate dielectric layer 200e is formed, the top of the second gate dielectric layer 200e is flush with the top opening of the word line trench, that is, the word line trench is filled with the second gate dielectric layer 200 e.

The gate oxide layer 200a, the work function layer 200b, the gate conductive layer 200c, the first gate dielectric layer 200d, the work function adjusting layer 200f, and the second gate dielectric layer 200e together form the word line structure.

Referring next to fig. 5e, a passivation layer 300 is formed on the substrate 100, and the passivation layer 300 covers the substrate 100 and the top of the word line structure, thereby protecting the word line structure.

EXAMPLE five

Fig. 6e is a schematic structural diagram of the semiconductor structure provided in this embodiment. As shown in fig. 6e, the difference from the fourth embodiment is that in this embodiment, the word line structure further includes a word line sidewall 200g, and the word line sidewall 200g is located on a sidewall of the gate oxide layer 200a wrapping the second gate dielectric layer 200e and the work function adjusting layer 200 f.

With continued reference to fig. 6e, the word line structure includes a gate oxide layer 200a, a gate conductive layer 200c, a first gate dielectric layer 200d, a work function adjusting layer 200f, word line sidewalls 200g, and a second gate dielectric layer 200 e. The gate oxide layer 200a covers the inner wall of the word line groove; the work function layer 200b is located on the gate oxide layer 200a, the gate conductive layer 200c is located on the work function layer 200b, the work function layer 200b and the gate conductive layer 200c fill a partial depth of the word line trench together, the first gate dielectric layer 200d, the work function adjusting layer 200f and the second gate dielectric layer 200e are stacked in sequence, then cover the gate conductive layer 200c and fill the remaining depth of the word line trench, in addition, the work function adjusting layer 200f is closer to the gate conductive layer 200c than the second gate dielectric layer 200e, and the work function adjusting layer 200f is located between the first gate dielectric layer 200d and the second gate dielectric layer 200 e. The word line sidewall 200g is located on the first gate dielectric layer 200d, and the top of the word line sidewall is flush with the top opening of the word line trench, and the word line sidewall 200g covers at least part of the gate oxide layer 200a and wraps the sidewalls of the second gate dielectric layer 200e and the work function adjusting layer 200 f.

In this embodiment, the material of the word line sidewall spacers 200g may be one or more of silicon oxide, silicon nitride, or silicon oxynitride.

Fig. 6a to 6e are schematic structural views of the method for manufacturing a semiconductor structure in this embodiment during the manufacturing process. The difference from the fourth embodiment is that, in this embodiment, after the gate oxide layer 200a, the work function layer 200b, the gate conductive layer 200c and the first gate dielectric layer 200d are formed in the word line trench, the following steps are performed:

referring to fig. 6a, word line spacers 200g are formed in the word line trenches, and the word line spacers 200g are located on the first gate dielectric layer 200d and cover the exposed inner walls of the gate oxide layer 200 a.

Referring to fig. 6b, the substrate 100 below the bottom of the active region 101 and above the bottom of the word line structure is subjected to an oblique ion implantation process, so as to form an auxiliary doped region 102 in the substrate 100. It is understood that the auxiliary doped region 102 is located between the first set depth position H1 and the second set depth position H2, H2'. Since the top of the gate conductive layer 200c and the work function layer 200b is blocked by the first gate dielectric layer 200d, when the auxiliary doped region 102 is formed by an oblique ion implantation process, the gate conductive layer 200c, the work function layer 200b, and the work function adjusting layer 200f are not adversely affected. In addition, the word line sidewall 200g may also block ions in the tilted ion implantation process from entering the active region 101, so as to avoid adverse effects on the active region 101.

Referring to fig. 6c, the work function adjusting layer 200f is filled in the space where the word line trench is higher than the first gate dielectric layer 200d to cover the first gate dielectric layer 200d, and the work function adjusting layer 200f fills a partial depth of the word line trench. After the work function adjusting layer 200f is formed, the top of the work function adjusting layer 200f is still lower than the top opening of the word line trench, i.e., the work function adjusting layer 200f does not fill the word line trench.

Referring to fig. 6d, the second gate dielectric layer 200e is filled in the space where the word line trench is higher than the work function adjusting layer 200f to cover the work function adjusting layer 200f, and the second gate dielectric layer 200e fills the remaining depth of the word line trench. After the second gate dielectric layer 200e is formed, the top of the second gate dielectric layer 200e is flush with the top opening of the word line trench, that is, the word line trench is filled with the second gate dielectric layer 200 e.

The gate oxide layer 200a, the work function layer 200b, the gate conductive layer 200c, the first gate dielectric layer 200d, the work function adjusting layer 200f, the word line sidewall 200g, and the second gate dielectric layer 200e together form the word line structure.

Referring next to fig. 6e, a passivation layer 300 is formed on the substrate 100, and the passivation layer 300 covers the substrate 100 and the top of the word line structure, thereby protecting the word line structure.

In summary, the present invention provides a semiconductor structure, wherein an active region extending along a first predetermined direction is formed in a substrate, and the active region extends from a surface of the substrate to a first set depth position of the substrate; a plurality of word line structures located in the substrate and extending along a second predetermined direction to pass through respective active regions, the word line structures extending from the surface of the substrate to a second set depth position of the substrate, the second set depth position being lower than the first set depth position; a plurality of auxiliary doped regions are located in the substrate and surround corresponding word line structures, each of the auxiliary doped regions being located between the first set depth position and the second set depth position. Therefore, the auxiliary doping region can be utilized to improve the leakage current phenomenon between the word line structure and the active region.

It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.

It should also be noted that, although the present invention has been described with reference to the preferred embodiments, the above-mentioned embodiments are not intended to limit the present invention. To anyone skilled in the art, without departing from the scope of the present invention, the technical solution disclosed above can be used to make many possible variations and modifications to the technical solution of the present invention, or to modify equivalent embodiments with equivalent variations. Therefore, any simple modification, equivalent change and modification made to the above embodiments by the technical entity of the present invention all still belong to the protection scope of the technical solution of the present invention, where the technical entity does not depart from the content of the technical solution of the present invention.

It should be further understood that the terms "first," "second," "third," and the like in the description are used for distinguishing between various components, elements, steps, and the like, and are not intended to imply a logical or sequential relationship between various components, elements, steps, or the like, unless otherwise indicated or indicated.

It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Further, implementation of the methods and/or apparatus of embodiments of the present invention may include performing the selected task manually, automatically, or in combination.

Claims

1. A semiconductor structure, comprising:

2. The semiconductor structure of claim 1, wherein a spacing between a top of the auxiliary doped region and the corresponding word line structure is less than a spacing between a bottom thereof and the corresponding word line structure.

3. The semiconductor structure of claim 1, wherein a doping type of the auxiliary doped region is the same as a doping type of the active region.

4. The semiconductor structure of claim 1, wherein said substrate has a plurality of wordline trenches therein, said wordline structures being located in corresponding wordline trenches, said wordline structures comprising a gate oxide layer, a gate conductive layer, and two gate dielectric layers, said gate oxide layer covering an inner wall of said wordline trenches, said gate conductive layer being located on said gate oxide layer and filling a portion of a depth of said wordline trenches, and two of said gate dielectric layers stacked covering said gate conductive layer and filling a remaining depth of said wordline trenches.

5. The semiconductor structure of claim 4, wherein the two gate dielectric layers are a first gate dielectric layer and a second gate dielectric layer, respectively, the first gate dielectric layer is closer to the gate conductive layer than the second gate dielectric layer, and a work function adjusting layer is further disposed between the gate conductive layer and the first gate dielectric layer.

6. The semiconductor structure of claim 4, wherein the two gate dielectric layers are a first gate dielectric layer and a second gate dielectric layer, respectively, the first gate dielectric layer is closer to the gate conductive layer than the second gate dielectric layer, and a work function adjusting layer is further disposed between the first gate dielectric layer and the second gate dielectric layer.

7. The semiconductor structure of claim 6, wherein the word line structure further comprises a word line sidewall, wherein the word line sidewall wraps sidewalls of the second gate dielectric layer and the work function adjusting layer.

8. The semiconductor structure of any one of claims 5-7, wherein the material of the work function adjusting layer is polysilicon or amorphous silicon.

9. The semiconductor structure of claim 4, wherein the material of both gate dielectric layers is silicon oxide, silicon nitride or silicon oxynitride.