CN213739780U - Thermal field of single crystal furnace and single crystal furnace - Google Patents
Thermal field of single crystal furnace and single crystal furnace Download PDFInfo
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- CN213739780U CN213739780U CN202022838869.7U CN202022838869U CN213739780U CN 213739780 U CN213739780 U CN 213739780U CN 202022838869 U CN202022838869 U CN 202022838869U CN 213739780 U CN213739780 U CN 213739780U
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Abstract
The application relates to a thermal field and single crystal growing furnace of single crystal growing furnace, wherein the thermal field of single crystal growing furnace includes main part, electrode and protective layer, and the electrode is located to the protective layer cover and includes first protective layer and second protective layer, and one of the two is the isolation layer, can be used for thermal-insulated, and another can be used for supporting the isolation layer, and the main part includes that the material is the first main part of hard felt layer and the second main part that the material is soft felt layer. Through the design, the heat preservation and deformation resistance of the main body part can be improved, and the possibility of thermal deformation, damage and corrosion of the main body part can be reduced, so that the service life of the main body part is prolonged, and the cost is reduced.
Description
Technical Field
The application relates to the technical field of solar cell processing, in particular to a thermal field and a single crystal furnace.
Background
With the development of the technology, the application of the solar cell is more and more extensive, and in the process of processing the solar cell, the main equipment used for producing the monocrystalline silicon is a monocrystalline furnace, which is affected by high temperature and the like in actual use, the consumption of a soft felt in a thermal field, which is in contact with an electrode, is large, the conditions of damage, corrosion and the like are easy to occur, and the service life is affected.
SUMMERY OF THE UTILITY MODEL
The application provides a thermal field and a single crystal furnace, which are used for prolonging the service life of the thermal field.
A first aspect of the present application provides a thermal field of a single crystal furnace, the thermal field of the single crystal furnace comprising:
a body portion comprising a first body portion and a second body portion, the first body portion being a hard felt layer and the second body portion being a soft felt layer;
an electrode attached to the body portion;
the protective layer comprises a first protective layer and a second protective layer, and the protective layer is sleeved on the electrode;
one of the first protective layer and the second protective layer is an isolation layer, and the other is used for supporting the isolation layer.
In one possible embodiment, at least one of the first protective layer and the second protective layer is an insulating material.
In one possible embodiment, the insulating material is quartz.
In a possible embodiment, the first protective layer is located on a side of the second protective layer facing the electrode, and the material of the first protective layer is quartz.
In one possible embodiment, the second protective layer is a cured felt.
In one possible embodiment, the first body portion is located above the second body portion in a thickness direction of a thermal field of the single crystal furnace.
In one possible embodiment, the main body portion has a through hole, the electrode is mounted to the through hole, and the protective layer is located between the electrode and the main body portion.
In a possible implementation manner, the main body portion includes a plurality of the electrodes, and each of the electrodes is respectively sleeved with the protective layer.
In one possible embodiment, the soft felt layer is a carbon felt, and the hard felt layer is formed by extruding a plurality of the soft felt layers.
A second aspect of the present application provides a single crystal furnace comprising the thermal field of the single crystal furnace of any one of the above.
The application relates to a thermal field and single crystal growing furnace of single crystal growing furnace, wherein the thermal field of single crystal growing furnace includes main part, electrode and protective layer, and the electrode is located to the protective layer cover and includes first protective layer and second protective layer, and one of the two is the isolation layer, can be used for thermal-insulated, and another can be used for supporting the isolation layer, and the main part includes that the material is the first main part of hard felt layer and the second main part that the material is soft felt layer. Through the design, the heat preservation and deformation resistance of the main body part can be improved, and the possibility of thermal deformation, damage and corrosion of the main body part can be reduced, so that the service life of the main body part is prolonged, and the cost is reduced.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
Fig. 1 is a schematic structural diagram of a thermal field provided in an embodiment of the present application;
fig. 2 is a sectional view taken along a-a of fig. 1.
Reference numerals:
1-a body portion;
11-a first body portion;
12-a second body portion;
2-an electrode;
3-a protective layer;
31 — a first protective layer;
32-second protective layer.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
Detailed Description
For better understanding of the technical solutions of the present application, the following detailed descriptions of the embodiments of the present application are provided with reference to the accompanying drawings.
It should be understood that the embodiments described are only a few embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
It should be noted that the terms "upper", "lower", "left", "right", and the like used in the embodiments of the present application are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In addition, in this context, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on "or" under "the other element or be indirectly on" or "under" the other element via an intermediate element.
With the development of the technology, the application of the solar cell is more and more extensive, in the process of processing the solar cell, the main equipment used for producing the monocrystalline silicon is a monocrystalline furnace, the monocrystalline furnace is influenced by high temperature and the like in actual use, the consumption of a soft felt in a thermal field, which is in contact with an electrode, is large, the conditions of damage, corrosion and the like are easy to occur, the service life of the thermal field is influenced, and meanwhile, the soft felt needs to be frequently replaced, so that the cost is increased.
In view of this, the embodiment of the application provides a thermal field of a single crystal furnace and the single crystal furnace, which are used for prolonging the service life of the thermal field.
As shown in fig. 1 and fig. 2, an embodiment of the present application provides a thermal field of a single crystal furnace, wherein the thermal field of the single crystal furnace includes a main body portion 1, an electrode 2, and a protective layer 3, the electrode 2 is mounted on the main body portion 1, and the protective layer 3 is sleeved outside the electrode 2, that is, the protective layer 3 may be located between the electrode 2 and the main body portion 1, so as to protect the main body portion 1. Specifically, the protection layer 3 may include a first protection layer 31 and a second protection layer 32, and the first protection layer 31 and the second protection layer 32 are sequentially sleeved outside the electrode 2. One of the first protective layer 31 and the second protective layer 32 may be an isolation layer for thermal insulation to reduce the possibility of thermal damage to the main body 1; the other one can be used for supporting the isolation layer and can also play a role in heat insulation and the like while supporting the isolation layer.
The protective layers 3 are arranged outside the electrode 2, so that the effects of heat insulation and the like can be effectively improved, and the possibility of heat damage of the main body part 1 is reduced. In general, materials with good heat insulation capacity, such as soft felt, have poor hardness, so the protective layer 3 with high hardness can be arranged to support the isolation layer, so as to reduce the possibility of the isolation layer falling off and deforming.
As shown in fig. 2, the main body portion 1 may include a first main body portion 11 and a second main body portion 12, specifically, the first main body portion 11 is a hard felt layer, the second main body portion 12 is a soft felt layer, the heat preservation and heat insulation capability of the soft felt layer is better, but the hardness is poorer, and the hardness of the hard felt layer is better, compared with a scheme that only includes a soft felt layer or a hard felt layer, the scheme provided in this embodiment of the present application can improve the whole hardness of the main body portion 1 while improving the heat preservation effect of the main body portion 1, thereby reducing the possibility of deformation and damage of the main body portion 1, so as to prolong the service life of the main body portion 1, reduce the number of replacement times, reduce the cost, and better meet the actual use requirements.
Of course, in other embodiments, the main body portion may also adopt other structural forms as required, and the present invention is not limited thereto.
As shown in fig. 2, in one possible embodiment, the first body portion 11 is located above the second body portion 12 in the thickness direction Z of the thermal field of the single crystal furnace.
In general, the parts such as the furnace body of the single crystal furnace are positioned above the main body part 1, the first main body part 11 has higher hardness than the second main body part 12, and the main body part 1 can effectively reduce the possibility of the second main body part 12 deforming under pressure by the contact of the first main body part 11 with other parts.
In one possible embodiment, at least one of the first protective layer 31 and the second protective layer 32 is an insulating material.
In this embodiment, can promote the security in thermal field through such design, when electrode 2 broke down and lead to the electric leakage condition to take place, protective layer 3 can carry out earth leakage protection, reduces the risk that the user electrocuted.
In one possible embodiment, the insulating material is quartz. The quartz has higher hardness, better high temperature resistance and corrosion resistance, and better accordance with the use requirements under the actual severe production environment. Of course, in other embodiments, the insulating material may be selected from other types of materials besides quartz, and even the protective layer 3 may not be selected from the insulating material, which will not affect the implementation and the purpose of the present invention.
As shown in fig. 2, in one possible embodiment, the material of the first protective layer 31 is quartz, and the first protective layer 31 is located on the side of the second protective layer 32 facing the electrode 2, i.e. the first protective layer 31 is located on the inner side of the second protective layer 32.
The second protective layer 32 serves to provide further thermal insulation, thereby reducing the likelihood of the main body 1 being deformed, damaged or corroded by heat.
In a possible embodiment, the second protective layer 32 is a cured felt, and the cured felt has good thermal shock resistance and self-supporting property, so that heat insulation can be effectively performed, and the occurrence of thermal deformation, corrosion and the like caused by direct contact between the main body portion 1 and the electrode 2 is reduced.
In one possible embodiment, as shown in fig. 2, the main body 1 has a through hole, which may be disposed along the height direction Z of the thermal field of the single crystal furnace, the electrode 2 is mounted to the through hole, and the protective layer 3 is located between the electrode 2 and the main body 1.
Through the design, the installation accuracy of the electrode 2 can be improved, and the possibility that the electrode 2 is in direct contact with the main body part 1 is reduced, so that the heat insulation is realized, the possibility that the main body part 1 is corroded is reduced, the service life of a thermal field is prolonged, and the cost is reduced.
In one possible embodiment, as shown in fig. 2, the thermal field comprises a plurality of electrodes 2, each electrode 2 being sheathed with a protective layer 3.
By adopting the design, the influence of the electrode 2 on the thermal field can be reduced, so that the corrosion rate of the main body part 1 is improved, the replacement frequency is reduced, and the service life is prolonged.
In one possible embodiment, the soft felt layer is made of carbon felt, and the hard felt layer is formed by laminating a plurality of soft felt layers and then extruding.
Such design has the advantage of processing is simple, the operation of being convenient for, accords with actual user demand more.
Based on the thermal field of the single crystal furnace related to any one of the above embodiments, the embodiment of the present application further provides a single crystal furnace, wherein the single crystal furnace may include the thermal field related to any one of the above embodiments, and the thermal field of the single crystal furnace has the above technical effects, so the single crystal furnace including the thermal field also has corresponding technical effects, and details are not repeated here.
The embodiment of the application provides a thermal field and single crystal growing furnace of single crystal growing furnace, and wherein the thermal field of single crystal growing furnace includes main part 1, electrode 2 and protective layer 3, and electrode 2 and including first protective layer 31 and second protective layer 32 are located to protective layer 3 cover, and one of the two is the isolation layer, can be used for thermal-insulated, and the other can be used for supporting the isolation layer, and main part 1 includes that the material is the first main part 11 of hard felt layer and the material is the second main part 12 of soft felt layer. Through the design, the heat preservation and deformation resistance of the main body part 1 can be improved, and the possibility of thermal deformation, damage and corrosion of the main body part 1 can be reduced, so that the service life of the main body part 1 is prolonged, and the cost is reduced.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A thermal field of a single crystal furnace, characterized in that the thermal field of the single crystal furnace comprises:
a main body portion (1), the main body portion (1) comprising a first main body portion (11) and a second main body portion (12), the first main body portion (11) being a hard felt layer, the second main body portion (12) being a soft felt layer;
an electrode (2), wherein the electrode (2) is attached to the main body (1);
the protective layer (3) comprises a first protective layer (31) and a second protective layer (32), and the electrode (2) is sleeved with the protective layer (3);
one of the first protective layer and the second protective layer is an isolation layer, and the other is used for supporting the isolation layer.
2. The thermal field of a single crystal furnace according to claim 1, wherein at least one of the first protective layer (31) and the second protective layer (32) is an insulating material.
3. The thermal field of a single crystal furnace as defined in claim 2, wherein the insulating material is quartz.
4. The thermal field of a single crystal furnace according to claim 1, characterized in that the first protective layer (31) is located on the side of the second protective layer (32) facing the electrode (2), and the material of the first protective layer (31) is quartz.
5. The thermal field of a single crystal furnace according to claim 4, characterized in that the second protective layer (32) is a solidified felt.
6. The thermal field of a single crystal furnace according to claim 1, wherein the first body portion (11) is located above the second body portion (12) in a thickness direction of the thermal field of the single crystal furnace.
7. The thermal field of a single crystal furnace according to claim 1, wherein the main body portion (1) has a through hole, the electrode (2) is mounted to the through hole, and the protective layer (3) is located between the electrode (2) and the main body portion (1).
8. The thermal field of the single crystal furnace according to claim 7, wherein the main body part (1) comprises a plurality of the electrodes (2), and the electrodes (2) are respectively sleeved with the protective layer (3).
9. The thermal field of a single crystal furnace according to any one of claims 1 to 8, wherein the soft felt layer is a carbon felt, and the hard felt layer is extruded from a plurality of the soft felt layers.
10. A single crystal furnace, characterized in that it comprises a thermal field of a single crystal furnace according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022838869.7U CN213739780U (en) | 2020-11-30 | 2020-11-30 | Thermal field of single crystal furnace and single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022838869.7U CN213739780U (en) | 2020-11-30 | 2020-11-30 | Thermal field of single crystal furnace and single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213739780U true CN213739780U (en) | 2021-07-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202022838869.7U Active CN213739780U (en) | 2020-11-30 | 2020-11-30 | Thermal field of single crystal furnace and single crystal furnace |
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| CN (1) | CN213739780U (en) |
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Address after: 614800 No.10, Shizi street, Qiaogou Town, Wutongqiao District, Leshan City, Sichuan Province Patentee after: Sichuan Jingke Energy Co.,Ltd. Patentee after: Jingke Energy Co.,Ltd. Address before: 614800 No.10, Shizi street, Qiaogou Town, Wutongqiao District, Leshan City, Sichuan Province Patentee before: Sichuan Jingke Energy Co.,Ltd. Patentee before: JINKO SOLAR Co.,Ltd. |