CN213708539U

CN213708539U - Electroplating solution stirring module and wafer electroplating system comprising same

Info

Publication number: CN213708539U
Application number: CN202022828597.2U
Authority: CN
Inventors: 史蒂文·贺·汪; 林鹏鹏
Original assignee: Silicon Dense Core Plating Haining Semiconductor Technology Co ltd
Current assignee: Silicon Dense Core Plating Haining Semiconductor Technology Co ltd
Priority date: 2020-11-30
Filing date: 2020-11-30
Publication date: 2021-07-16
Anticipated expiration: 2030-11-30

Abstract

The utility model discloses a plating solution stirring module and a wafer plating system comprising the same, wherein the plating solution stirring module comprises a plating bath, a rotating part and a turbulent flow part; the rotating part is positioned in the electroplating bath and can rotate relative to the surface of the wafer in the electroplating bath; vortex portion sets up on the rotating part, and vortex portion is located the one side of rotating part orientation wafer at least, and vortex portion can vortex the plating solution in the plating bath. The utility model provides a rotating part is rotatory for the constant head tank, and the constant head tank plays the limiting displacement to the rotating part to can strengthen the stability of rotation process, can be with the less value of the distance design between vortex portion and the wafer surface, and the distance between vortex portion and the wafer surface is less, and the vortex effect that vortex portion played is better, and the exchange rate between plating solution each other is faster, thereby improves the reliability and the yield of integrated technology.

Description

Electroplating solution stirring module and wafer electroplating system comprising same

Technical Field

The utility model relates to a semiconductor processing field, in particular to plating solution stirring module reaches wafer electroplating system including it.

Background

In the process result of wafer electroplating, one of the key indexes is the uniformity of the wafer surface, and the more uniform the wafer surface is, the better the wafer electroplating process is. The uniformity of the surface of the wafer is influenced by various factors, one of the factors is a filling technology of TSV (through silicon via technology) deep holes, blind holes in the wafer are filled in a copper electroplating mode, vertical electrical interconnection of the through silicon vias is achieved, and the electroplating filling technology is low in cost and high in deposition speed. In the electroplating process, materials such as copper in the electroplating solution can be gradually deposited in the deep hole, the copper content of the electroplating solution can be reduced, the electroplating solution in the deep hole needs to be continuously replaced in order to ensure that the copper content in the electroplating solution for filling the deep hole is sufficient, and the electroplating solution is stirred to enable the electroplating solution to be exchanged.

At present, one system for realizing plating solution exchange is to arrange a horizontally movable stirrer near the surface of the wafer, the stirrer goes deep into the plating solution, and the exchange between the plating solutions is realized through the reciprocating translation in the horizontal direction. However, the moving inertia of the stirrer in this way is large, and the stirrer is easy to shake in the vertical direction, so that the safety distance between the stirrer and the wafer is large, and the stirrer is prevented from touching the surface of the wafer in the moving process to cause abrasion to the surface of the wafer. The larger the distance between the stirrer and the wafer is, the worse the turbulence effect of the stirrer on the surface of the wafer, particularly the electroplating solution in the deep hole is, so that the electroplating solution in the deep hole is not exchanged in time, and the reliability of the integration technology and the product yield are reduced.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is to provide a plating solution stirring module and including its wafer electroplating system in order to overcome the lower defect of the inside plating solution exchange rate of wafer surface, especially deep hole among the prior art.

The utility model discloses an above-mentioned technical problem is solved through following technical scheme:

an electroplating solution stirring module comprises an electroplating bath, a rotating part and a turbulent flow part;

the rotating part is positioned in the electroplating bath and can rotate relative to the surface of the wafer in the electroplating bath;

the vortex portion sets up on the rotating part, vortex portion is located at least the rotating part is towards one side of wafer, vortex portion can the vortex the plating solution in the plating bath.

In this scheme, the rotating part is rotatory through drive vortex portion, realizes the plating solution in the vortex plating bath of vortex portion, and then realizes the exchange between the plating solution. Above-mentioned setting makes the rotating part rotatory for the constant head tank, the constant head tank plays the limiting displacement to the rotating part promptly, thereby can strengthen the stability of rotation process, compare in the tradition reciprocating translation that passes through the agitator horizontal direction, the inertia that the rotating part removed the production is less, the location relation of the relative plating bath of rotating part is according to reliable, this scheme can be with the distance design between vortex portion and the wafer surface littleer, and the distance between vortex portion and the wafer surface is littleer, the vortex effect that vortex portion played is better, the exchange speed between plating solution each other is faster, thereby improve integrated technology's reliability and product yield.

Preferably, the minimum distance between one end of the turbulent flow part close to the wafer and the surface of the wafer is 0.9mm-1 mm.

In this scheme, adopt the rotating part to drive the rotatory mode of vortex portion and carry out the vortex, can obviously shorten the shortest distance between vortex portion and the wafer to strengthen the vortex effect of vortex portion, accelerate the exchange rate between the plating solution.

Preferably, the number of the turbulence parts on the rotating part is a plurality of, and the distance from one end of the turbulence part close to the wafer to the surface of the wafer is the same.

In the scheme, the turbulence effect of the electroplating solution at all positions above the surface of the wafer is approximately the same, namely the exchange speed of the electroplating solution is approximately the same, so that the filling effect among deep holes of the wafer can be approximately the same.

Preferably, the vortex portion includes the first vortex unit of rectangular shape, first vortex unit passes through the rotation central axis of rotating part.

In this scheme, provide a concrete structure of vortex portion, the aforesaid sets up the area that can make the face that the rotation path of first vortex unit formed and reaches the biggest area value that vortex portion can the vortex to simplify the structure of vortex portion.

Preferably, the first vortex unit with the crossing department of the rotation central axis of rotating part is provided with first through-hole, the both ends of first through-hole link up first vortex unit.

In this scheme, because first vortex unit is rotatory around the rotation central axis of rotating part, consequently the rotation center of first vortex unit is unchangeable all the time and is in the state of sheltering from by first vortex unit always, according to the electroplating process requirement, if sheltered from always, can lead to being sheltered from the unable normal electroplating of the wafer deep hole that the department corresponds, reduces the electroplating process result, reduces the homogeneity on wafer surface.

Preferably, the first vortex unit can rotate around self axis, be provided with the second through-hole on the first vortex unit, the second through-hole is relative the rotation central axis asymmetric setting of rotating part.

In this scheme, the plating solution that both sides received when first vortex unit passes through the vortex plating solution is rotatory to its pressure differential, because first vortex unit is through the rotation central axis of rotating part, consequently under the structure of first vortex unit is for the rotation central axis symmetry's of rotating part the condition, the pressure of the plating solution that first vortex unit both sides received may reach the balance and cause the unable rotation of first vortex unit, the aforesaid sets up the both sides that make first vortex unit and can form the pressure differential in order to produce the rotation.

Preferably, the spoiler portion further comprises at least one second spoiler unit, the second spoiler unit is of a long strip-shaped structure, and the second spoiler unit is at least arranged on one side of the first spoiler unit.

In this scheme, the vortex effect of vortex portion can be strengthened to second vortex unit, and the quantity of second vortex unit is more, and the vortex effect is better.

Preferably, the quantity of second vortex unit is a plurality of, and is a plurality of second vortex unit sets up the both sides of first vortex unit are located one of them side of first vortex unit second vortex unit for structure behind the first vortex unit symmetry staggers with being located first vortex unit opposite side the second vortex unit.

In this scheme, above-mentioned setting is in order to make the rotation path that is located the second vortex unit of first vortex unit both sides can not be identical, when guaranteeing the vortex effect, reduces the quantity of second vortex unit, simplifies the structure of vortex portion.

Preferably, the projected area of the turbulent flow part on the surface of the wafer is greater than or equal to 30% of the surface area of the wafer.

In this scheme, the bigger the projected area of vortex portion on the wafer surface, plating solution mixing system is under operating condition, and the vortex portion can be simultaneously the vortex the region of flowing electric liquid more, and the vortex effect is better.

Preferably, the spoiler is a long-strip-shaped impeller, the impeller is provided with a spoiler surface, and the impeller can rotate around the axis of the impeller.

In this scheme, the impeller rotation can further strengthen the vortex effect to the plating solution, improves the exchange rate between the plating solution.

Preferably, the plating bath is provided with a groove annularly arranged along the rotation direction of the rotating part, and one end of the rotating part facing the groove is provided with a boss for positioning with the groove.

In this scheme, provide the fixed mode of rotating part for the plating bath, above-mentioned setting simple structure, easily dismouting reduces the man-hour that the equipment needs.

Preferably, the rotating portion has a gear structure, and the plating solution stirring module further includes an external gear engaged with the rotating portion and capable of driving the rotating portion to rotate.

In the scheme, the gear transmission stability is high, the service life is long, and the speed ratio range is large.

Preferably, the rotating part is of a hollow structure, the spoiler is arranged in a hollow area of the rotating part, and the spoiler is close to the surface of the wafer relative to the rotating part.

In this scheme, the aforesaid sets up the space that vortex portion can occupy the rotating part middle part, reduces the whole shared space of plating solution stirring module.

A wafer plating system comprises a wafer clamp and the electroplating solution stirring module.

In the scheme, the application field of the electroplating stirring module is provided, and the wafer clamp is used for clamping a wafer and fixing the wafer above the electroplating liquid stirring module so as to carry out an electroplating process.

Preferably, the height of the wafer clamp is adjustable, and the wafer clamp can adjust the distance between the surface of the wafer and the turbulence part.

In this scheme, because the position of plating solution stirring module remains fixed throughout, the distance between wafer surface and the vortex portion can be adjusted in the aforesaid setting, can also prevent when reinforcing vortex effect that vortex portion from touching the wafer surface, improves the flexibility that the wafer was electroplated.

The utility model discloses an actively advance the effect and lie in: the utility model discloses a rotating part is rotatory through drive vortex portion, realizes the plating solution in the vortex plating bath of vortex portion, and then realizes the exchange between the plating solution. The rotating part is rotatory for the constant head tank, the constant head tank plays the limiting displacement to the rotating part promptly, thereby can strengthen the stability of rotation process, compare in the tradition reciprocal translation that passes through the agitator horizontal direction, the inertia that the rotating part removed the production is less, the location relation of the relative plating bath of rotating part is according to reliable, this scheme can be with the distance design between vortex portion and the wafer surface littleer, and the distance between vortex portion and the wafer surface is littleer, the vortex effect that vortex portion played is better, the exchange speed between plating solution each other is faster, thereby improve the reliability and the product yield of integration technique.

Drawings

Fig. 1 is a schematic perspective view of an electroplating solution stirring module according to an embodiment of the present invention.

Fig. 2 is a schematic top view of a plating solution stirring module according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view taken along a-a in fig. 2.

Fig. 4 is another schematic perspective view of a plating solution stirring module according to an embodiment of the present invention.

Fig. 5 is a schematic perspective view of a connection state of the rotating portion and the spoiler according to an embodiment of the present invention.

Fig. 6 is a schematic perspective view of a first spoiler unit according to an embodiment of the present invention.

Fig. 7 is a schematic cross-sectional view of a first spoiler unit according to an embodiment of the present invention.

Fig. 8 is a schematic perspective view of a second spoiler unit according to an embodiment of the present invention.

Fig. 9 is a schematic cross-sectional view of a second spoiler unit according to an embodiment of the present invention.

Fig. 10 is a schematic perspective view of a rotating portion according to an embodiment of the present invention.

Fig. 11 is a schematic perspective view of an electroplating bath according to an embodiment of the present invention.

Fig. 12 is a schematic perspective view of a retainer ring according to an embodiment of the present invention.

Fig. 13 is a schematic cross-sectional view of a wafer plating system according to an embodiment of the present invention.

Fig. 14 is a schematic cross-sectional view of a wafer plating system according to an embodiment of the present invention.

Description of reference numerals:

wafer 1

Wafer surface 11

Electroplating liquid stirring module 2

Plating bath 21

Groove 211

Rotating part 22

The boss 221

First space 222

Turbulent flow part 23

First spoiler unit 231

Second spoiler unit 232

Turbulent surface 233

Through hole 234

First external gear 241

Second external gear 242 rotating shaft 243

Bearing seat 25

Retaining ring 26

Second space 261

Wafer clamp 3

Clamping part 31

Detailed Description

The present invention is further illustrated by way of the following examples, which are not intended to limit the scope of the invention.

Example 1

As shown in fig. 13, the present embodiment provides a wafer electroplating system, which is used for performing electroplating processing on a wafer 1 to fill a deep hole in the wafer. The wafer electroplating system comprises an electroplating solution stirring module 2 and a wafer clamp 3, wherein the electroplating solution stirring module 2 is used for disturbing electroplating solutions to realize exchange among the electroplating solutions, so that the temperatures of the electroplating solutions of all parts are uniform, and the components in the electroplating solutions of the wafer electroplating area can be continuously updated, thereby always keeping the optimal current density and deposition speed and improving the wafer electroplating process. The wafer clamp 3 is used for clamping the wafer 1, so that the wafer 1 can be fixed at a position to be processed, and the stability in the processing process is ensured.

As shown in fig. 1 to 4, the plating solution stirring module 2 includes a plating tank 21, a rotating portion 22 and a spoiler portion 23, the plating tank 21 is configured to accommodate a plating solution, the spoiler portion 23 is disposed above the rotating portion 22 and connected to the rotating portion 22, and the rotating portion 22 and the spoiler portion 23 are both disposed in the plating tank 21 and immersed in the plating solution in the plating tank 21.

As shown in fig. 3, the opening of the plating tank 21 is disposed upward, the rotating portion 22 is positioned in the plating tank 21, and the plating tank 21 can restrict the horizontal translation and the downward movement of the rotating portion 22, so that the rotating portion 22 can rotate only in a specific direction on the horizontal plane, thereby improving the stability of the rotation process.

Specifically, as shown in fig. 10 to 11, the plating tank 21 has a groove 211 annularly disposed along the rotation direction of the rotating portion 22, one end of the rotating portion 22 facing the groove 211, that is, the lower end of the rotating portion 22, has an annular boss 221 for positioning with the groove 211, the boss 221 is accommodated in the groove 211, the groove 211 and the boss 221 are loosely fitted, and the width of the boss 221 is slightly smaller than the width of the groove 211, so that a space for allowing the rotating portion 22 to rotate can be reserved in the groove 211, and the smoothness of rotation of the rotating portion 22 is ensured. Plating bath 21 and rotating part 22 adopt unsmooth cooperation, simple structure, and easy dismounting can reduce the required man-hour of equipment. Wherein, the width direction of the groove 211 and the width direction of the boss 221 are both parallel to the radial direction of the boss 221.

The rotation that the rotating part 22 was realized to this embodiment through gear drive's mode, and gear drive stationarity is high, long service life, speed ratio scope are big, can adjust the rotation speed of rotating part 22 more accurately, and then control the vortex condition to the plating solution, adjust the exchange velocity of plating solution.

Specifically, as shown in fig. 1 to 4, the rotating portion 22 in this embodiment is a gear structure, and the plating solution stirring module 2 further includes a driving assembly for driving the rotating portion 22 to rotate, wherein the driving assembly includes a first external gear 241 and a second external gear 242. The first external gear 241 is disposed outside the plating vessel 21, the first external gear 241 is located above the second external gear 242, and both are connected by a rotating shaft 243, and the second external gear 242 is disposed inside the plating vessel 21 and meshes with the rotating portion 22. A driving member for driving the first external gear 241 to rotate is further disposed outside the plating tank 21, and the first external gear 241 can drive the second external gear 242 to rotate synchronously while being driven to rotate by the driving member, and further drive the rotating portion 22 engaged with the second external gear 242 to rotate, under the action of the rotating shaft 243. Since the plating solution is always contained in the plating vessel 21, the above-described drive unit prevents the plating solution from flowing out of the plating vessel 21 through the connection between the rotating portion 22 and the drive unit.

As shown in fig. 4-5, the spoiler portion 23 is disposed above the rotating portion 22, i.e., the spoiler portion 23 is closer to the wafer surface 11 relative to the rotating portion 22, the rotating portion 22 can drive the spoiler portion 23 connected thereto to rotate along the rotating direction of the rotating portion 22, thereby disturbing the plating solution in the plating bath 21 by the spoiler portion 23. The spoiler portion 23 in this embodiment includes a first spoiler unit 231 and four second spoiler units 232, and the first spoiler unit 231 and the second spoiler units 232 are both long-strip-shaped impeller structures, and the length of the impeller extends along the horizontal direction and has spoiler surfaces 233 for spoiler plating solutions. First vortex unit 231 and second vortex unit 232 are parallel and are located same height to avoid first vortex unit 231 and second vortex unit 232 to follow the rotatory route of rotating portion 22 and overlap, and make the plating solution vortex effect of wafer surface 11 top everywhere roughly the same, exchange speed between the plating solution is roughly the same promptly, thereby make the filling effect between the wafer deep hole can roughly the same.

As shown in fig. 5-9, first vortex unit 231 and second vortex unit 232 all can dismantle with rotating part 22 through bearing frame 25 and be connected, first vortex unit 231 and second vortex unit 232 all have three blade, rotating part 22 drives the rotatory in-process of vortex portion 23, vortex surface 233 of first vortex unit 231 and the vortex surface 233 of second vortex unit 232 rotate under the pressure of plating solution, realize that first vortex unit 231 and second vortex unit 232 rotate around the axis of self respectively, thereby further strengthen the vortex effect to the plating solution, improve the exchange speed between the plating solution.

As shown in fig. 5, the first spoiler unit 231 passes through the central axis of rotation of the rotating portion 22, and the area of the surface formed by the rotating path of the first spoiler unit 231 following the rotation of the rotating portion 22 is the maximum area value of the spoiler portion 23 capable of spoiler, so that in other alternative embodiments, the spoiler portion 23 may include only one first spoiler unit 231 without additionally providing other second spoiler units 232, thereby simplifying the structure of the spoiler portion 23 and reducing the cost of the spoiler portion 23.

As shown in fig. 6 to 7, the first spoiler unit 231 is provided with a through hole 234, an intersection of the first spoiler unit 231 and the rotation central axis of the rotating portion 22 falls within the range of the through hole 234, and the through hole 234 is asymmetrically arranged with respect to the rotation central axis of the rotating portion 22.

Because first vortex unit 231 is except that the rotation is rotatory around the rotation central axis of rotating part 22, consequently the rotation center of first vortex unit 231 is unchangeable all the time and can be in the state of being sheltered from by first vortex unit 231 always, according to the electroplating process requirement, if sheltered from always, can lead to being sheltered from the unable normal electroplating of the wafer deep hole that the department corresponds, reduces the electroplating process result, reduces the homogeneity on wafer surface 11. Therefore, the through hole 234 is formed in the rotating center of the first turbulence unit 231 rotating along with the rotating portion 22, the rotating center of the first turbulence unit 231 is not always shielded under the action of the rotation of the first turbulence unit 231, so that a plating blind spot is not generated, and plating solution can be exchanged through the through hole 234, so that the plating process result of the position is improved.

In addition, because the first spoiler unit 231 rotates the pressure difference of the plating solution received by both sides when passing through the spoiler plating solution, but the first spoiler unit 231 rotates around the rotation central axis of the rotating part 22 except for the rotation, and the first spoiler unit 231 is a structure symmetrical with respect to the rotation central axis of the rotating part 22 under the condition of not additionally opening holes, so the pressure of the plating solution received by both sides of the first spoiler unit 231 may reach the balance and cause the first spoiler unit 231 to be unable to rotate, the through hole 234 asymmetrically arranged with respect to the rotation central axis of the rotating part 22 is provided in the embodiment, so that both sides of the first spoiler unit 231 can form the pressure difference to generate the rotation.

In other alternative embodiments, the number of the second turbulence units 232 may be reduced or increased according to the required plating solution exchange speed, and the greater the number of the second turbulence units 232, the better the turbulence effect of the turbulence portion 23 on the plating solution. The second spoiler units 232 are at least disposed at one side of the first spoiler unit 231, and are not overlapped with the first spoiler unit 231, and the plurality of second spoiler units 232 are not overlapped with each other. Preferably, when the number of the second spoiler units 232 is plural and is set at both sides of the first spoiler unit 231, the structure of the second spoiler unit 232 located at one side of the first spoiler unit 231, which is symmetrical with respect to the first spoiler unit 231, is staggered from the second spoiler unit 232 located at the other side of the first spoiler unit 231, that is, the second spoiler units 232 located at both sides of the first spoiler unit 231 are not symmetrical with respect to the first spoiler unit 231, so that the rotation paths of the second spoiler units 232 located at both sides of the first spoiler unit 231 can be not identical, thereby reducing the number of the second spoiler units 232 and simplifying the structure of the first spoiler portion 23 while ensuring the spoiler effect.

The through hole 234 in this embodiment can solve the problem of the electroplating blind spot and the rotation of the first spoiler unit 231 at the same time, in other alternative embodiments, the first spoiler unit 231 can be provided with a first through hole and a second through hole, respectively, the first through hole is disposed at the intersection of the first spoiler unit 231 and the rotation central axis of the rotating portion 22 to solve the problem of the electroplating blind spot, and the second through hole is disposed at one side of the first through hole to make the two ends of the first spoiler unit 231 unbalanced, thereby solving the problem of the rotation of the first spoiler unit 231.

In other alternative embodiments, the first spoiler unit 231 and the second spoiler unit 232 are not limited to the impeller structure with three blades as described above, and the spoiler 23 is not limited to the elongated impeller, and those skilled in the art may adopt other structures capable of achieving the same effect to achieve the purpose of spoiler, and preferably, the adopted spoiler 23 is capable of rotating and has a larger spoiler range.

Preferably, when the spoiler 23 is not rotated, the projected area of the spoiler 23 on the wafer surface 11 is greater than or equal to 30% of the area of the wafer surface 11, and for this embodiment, the sum of the projected areas of the first spoiler unit 231 and the four second spoiler units 232 on the wafer surface 11 needs to be greater than or equal to 30% of the area of the wafer surface 11. The larger the projection area of the turbulence portion 23 on the wafer surface 11 is, the more regions of the electroplating solution stirring system can be disturbed by the turbulence portion 23 in the working state, and the better the turbulence effect is.

As shown in fig. 10, the rotating portion 22 is a hollow gear, and a hollow portion in the middle of the rotating portion 22 forms the first space 222. On the other hand, the first space 222 of the rotation portion 22 can accommodate part of the turbulence portion 23, and the diameter of the turbulence portion 23 can be designed to be larger under the condition that the distance between the wafer surface 11 and the rotation portion 22 is the same, so as to enhance the turbulence effect and increase the plating solution exchange speed; and under the same condition of diameter at vortex portion 23, can make vortex portion 23 occupy the first space 222 in rotating part 22 middle part, reduce the whole shared space of plating solution stirring module 2.

In this embodiment, the rotation portion 22 drives the spoiler portion 23 to rotate, so that the spoiler portion 23 disturbs the plating liquid in the plating vessel 21, thereby achieving exchange between the plating liquids. Rotating part 22 is rotatory for the constant head tank, the constant head tank plays limiting displacement to rotating part 22 promptly, thereby can strengthen the stability of rotation process, compare in the tradition reciprocating translation that passes through the agitator horizontal direction, this embodiment can be with the design of the distance between vortex portion 23 and the wafer surface 11 littleer, vortex portion 23 is close to the one end of wafer 1 and the distance minimum between the wafer surface 11 can be controlled about 0.9mm-1mm, obviously reduced the distance between vortex portion 23 and the wafer surface 11, and the distance between vortex portion 23 and the wafer surface 11 is the less, the vortex effect that vortex portion 23 played is better, the exchange speed is faster each other for the plating solution, thereby improve the reliability and the product yield of integration technique.

Preferably, as shown in fig. 1 to 3, a retaining ring 26 is further disposed in the plating tank 21, the retaining ring 26 is disposed above the rotating portion 22 and is fixedly connected to the plating tank 21, an outermost portion of the rotating portion 22 is disposed between the retaining ring 26 and the plating tank 21, the retaining ring 26 can limit upward movement of the rotating portion 22, so as to prevent the turbulence portion 23 of the turbulence portion 23 mounted on the rotating portion 22 from contacting the wafer surface 11 above the rotating portion in the rotating process, thereby enhancing stability of the rotating process, even if the rotating portion 22 shakes upward in the rotating process, the retaining ring 26 can limit the maximum range of upward movement of the rotating portion 22, and further avoid the turbulence portion 23 mounted on the rotating portion 22 from colliding the wafer 1 above the rotating portion. As shown in fig. 12, the retainer ring 26 is a hollow ring structure, and a hollow portion in the middle of the retainer ring 26 forms a second space 261, and the second space 261 is used for accommodating the wafer 1 and the spoiler 23 and providing a space for performing an electroplating process on the wafer 1.

In the present embodiment, only one structure of the plating solution stirring module 2 having one turbulence portion 23 is disclosed, and in other alternative embodiments, the number of the turbulence portions 23 may be multiple, and preferably, the distances from one end of the multiple turbulence portions 23 close to the wafer 1 to the wafer surface 11 are the same, so that the turbulence effects of the plating solution at various positions above the wafer surface 11 are substantially the same, that is, the exchange speeds of the plating solutions are substantially the same, and thus the filling effects between the deep holes of the wafer can be substantially the same.

As shown in fig. 13, the wafer chuck 3 is disposed above the plating solution stirring module 2, the clamping portion 31 of the wafer chuck 3 faces downward, i.e., faces the plating solution stirring module 2, the wafer 1 is mounted on the clamping portion 31 of the wafer chuck 3 and is kept in a clamped state, the wafer 1 is immersed in the plating solution in the plating tank 21 and is located in the second space 261 of the retainer ring 26, the surface of the wafer 1 facing the spoiler 23 is the wafer surface 11, the rotary portion 22 drives the spoiler 23 to rotate relative to the wafer surface 11, and the spoiler 23 spoils the plating solution below the wafer 1.

Because the position of the plating solution stirring module 2 is always fixed, preferably, the height of the wafer clamp 3 in the embodiment is adjustable, and the distance between the wafer surface 11 and the turbulence part 23 is adjusted by adjusting the height of the wafer clamp 3, so that the turbulence effect is enhanced, meanwhile, the turbulence part 23 is prevented from touching the wafer surface 11, and the electroplating flexibility of the wafer 1 is improved.

In other alternative embodiments, the height of the wafer holder 3 is not adjustable, as shown in fig. 14, and the wafer holder 3 and the plating tank 21 are fixedly connected, and both are kept relatively stationary.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on normal use of the elements, and are used merely for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention unless otherwise specified herein.

Although specific embodiments of the present invention have been described above, it will be understood by those skilled in the art that this is by way of example only and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and the principles of the present invention, and these changes and modifications are all within the scope of the present invention.

Claims

1. The electroplating solution stirring module is characterized by comprising an electroplating bath, a rotating part and a turbulent flow part;

2. The plating solution stirring module of claim 1, wherein the minimum distance between the end of the turbulator proximate to the wafer and the wafer surface is 0.9mm to 1 mm.

3. The plating solution stirring module as claimed in claim 1, wherein the number of the turbulence portions on the rotation portion is plural, and the distances from the wafer surface to one ends of the plurality of turbulence portions close to the wafer are the same.

4. The plating solution stirring module as set forth in claim 1, wherein the spoiler comprises a first spoiler unit having an elongated shape passing through a rotational center axis of the rotating portion.

5. The plating solution stirring module as claimed in claim 4, wherein a first through hole is formed at an intersection of the first spoiler unit and a rotation central axis of the rotating portion, and both ends of the first through hole penetrate the first spoiler unit.

6. The plating solution stirring module as set forth in claim 4, wherein the first spoiler unit is rotatable about its own axis, and the first spoiler unit is provided with a second through hole which is asymmetrically disposed with respect to a rotational center axis of the rotating portion.

7. The plating solution stirring module as recited in claim 4, wherein the spoiler further comprises at least one second spoiler unit, the second spoiler unit is a strip-shaped structure, and the second spoiler unit is at least disposed on one side of the first spoiler unit.

8. The plating solution stirring module as recited in claim 7, wherein the number of the second turbulence units is plural, the plural second turbulence units are disposed on two sides of the first turbulence unit, and the structure of the second turbulence unit located on one side of the first turbulence unit, which is symmetrical with respect to the first turbulence unit, is staggered with respect to the second turbulence unit located on the other side of the first turbulence unit.

9. The plating solution stirring module as recited in claim 1, wherein a projected area of the turbulator on the wafer surface is equal to or greater than 30% of the wafer surface area.

10. The plating solution stirring module as recited in claim 1, wherein said turbulator is an elongated impeller having a turbulating surface, said impeller being rotatable about its axis.

11. The plating solution stirring module as set forth in claim 1, wherein the plating tank has a groove formed therein in a circular shape along a rotation direction of the rotating portion, and wherein an end of the rotating portion facing the groove has a projection for positioning with the groove.

12. The plating solution stirring module according to claim 1, wherein the rotating portion has a gear structure, and the plating solution stirring module further comprises an external gear that meshes with the rotating portion and is capable of driving the rotating portion to rotate.

13. The plating solution stirring module as claimed in claim 1, wherein the rotation portion is a hollow structure, the spoiler is disposed in a hollow region of the rotation portion, and the spoiler is disposed adjacent to the wafer surface with respect to the rotation portion.

14. A wafer plating system comprising a wafer chuck and the plating solution stirring module of any of claims 1-13.

15. The wafer plating system of claim 14, wherein the wafer chuck is adjustable in height, the wafer chuck being capable of adjusting a distance between a surface of a wafer and the spoiler.