CN213692647U - Semiconductor laser integrated chip - Google Patents
Semiconductor laser integrated chip Download PDFInfo
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- CN213692647U CN213692647U CN202022897883.4U CN202022897883U CN213692647U CN 213692647 U CN213692647 U CN 213692647U CN 202022897883 U CN202022897883 U CN 202022897883U CN 213692647 U CN213692647 U CN 213692647U
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Abstract
The utility model discloses a semiconductor laser integrated chip, which comprises a laser emitting unit and a laser detecting unit; the integrated chip further comprises: a common epitaxial structure; the first medium structure and the discrete epitaxial structure are positioned on one side of the common epitaxial structure; the discrete epitaxial structure comprises a first discrete epitaxial structure and a second discrete epitaxial structure; the laser emitting unit comprises a public epitaxial structure, a first discrete electrode and a public electrode; the laser detection unit comprises a public epitaxial structure, a second discrete electrode and a public electrode; the laser emitting unit has a first cavity length, the laser detecting unit has a second cavity length, the first dielectric structure has a third cavity length, and the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length, the third cavity length and the second cavity length. The technical problems that the length of a laser cavity is difficult to understand, the yield is low, the output power is unstable, and the use scene and the use range of the laser are affected are solved.
Description
Technical Field
The embodiment of the utility model provides a relate to semiconductor photoelectric technology field, especially relate to a semiconductor laser integrated chip.
Background
Semiconductor lasers, also known as laser diodes, are lasers using semiconductor materials, such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), aluminum nitride (AlN), cadmium sulfide (CdS), zinc sulfide (ZnS), etc., as working substances, have the advantages of small volume, high efficiency, long life, etc., and are widely used in the fields of laser communication, laser storage, laser printing, laser gyroscopes, laser displays, laser ranging, laser radars, etc. Among them, Distributed Feedback lasers (DFBs) have the advantages of fast modulation rate, good single mode characteristics, and the like, and are widely concerned by the industrial and academic circles.
The modulation rate of a DFB laser is related to the laser capacitance, which is related to the current injection region area. In order to improve the modulation rate of the DFB laser, a short cavity length structure is usually adopted, the cavity length of the laser is about 100 μm, and the short cavity length causes the laser to be difficult to cleave, seriously affects the yield when the laser is cleaved, and finally affects the production yield of devices; moreover, the short cavity length also causes the thermal resistance of the laser to be large, the junction temperature of the device is high when the device works, and the performance and the reliability of the device are seriously influenced.
Under the influence of factors such as the working environment temperature of the device, the heat dissipation of the device and the like, the threshold current of the semiconductor laser is easy to fluctuate, so that the output power of the device is unstable and suddenly high or low, and the use scene and the use range of the semiconductor laser are seriously influenced.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention provides a semiconductor laser integrated chip to solve the technical problem that a semiconductor laser chip in the prior art adopts a short cavity length structure, which results in that the laser chip is difficult to be cleaved, the production yield of the device is low, the thermal resistance is large, the performance and reliability of the device and the threshold current of the device are affected easily to fluctuate, the output power of the device is unstable, and the use scene and the use range of the semiconductor laser are seriously affected.
In a first aspect, an embodiment of the present invention provides a semiconductor laser integrated chip, including a laser emitting unit and a laser detecting unit;
the semiconductor laser integrated chip further includes:
the common epitaxial structure; the first medium structure and the discrete epitaxial structure are positioned on one side of the common epitaxial structure; the discrete epitaxial structures comprise a first discrete epitaxial structure and a second discrete epitaxial structure which are independent of each other; along a first direction, the first discrete epitaxial structure and the second discrete epitaxial structure are respectively positioned on two sides of the first dielectric structure; the first and second discrete epitaxial structures are located on one side of the common epitaxial structure along a second direction; the first direction intersects the second direction;
a ridge structure located in the discrete epitaxial structure;
the common electrode is positioned on one side of the common epitaxial structure, which is far away from the discrete epitaxial structure; the discrete electrodes are positioned on one side of the ridge structure, which is far away from the common epitaxial structure, and comprise a first discrete electrode and a second discrete electrode which are independent of each other, the first discrete electrode is positioned on one side of the first discrete epitaxial structure, which is far away from the common epitaxial structure, and the second discrete electrode is positioned on one side of the second discrete epitaxial structure, which is far away from the common epitaxial structure;
the laser emitting unit comprises the public epitaxial structure, the first discrete electrode and the public electrode, and the laser detecting unit comprises the public epitaxial structure, the second discrete electrode and the public electrode;
along the first direction, the laser emitting unit is provided with a first cavity length, the laser detecting unit is provided with a second cavity length, and the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length and the second cavity length.
Optionally, along the first direction, the first dielectric structure includes at least two sub-dielectric structures arranged in a stacked manner;
there is a difference in refractive index between two adjacent sub-medium structures.
Optionally, the first cavity length ranges from 50 to 500 μm; the second cavity is adjustable in length.
Optionally, along the second direction, the common epitaxial structure includes a substrate, a buffer layer, a lower optical field confinement layer, and a grating layer, which are stacked;
along the second direction, the discrete epitaxial structure comprises a lower waveguide layer, an active region, an upper waveguide layer, an upper optical field limiting layer and an upper contact layer which are arranged in a stacked mode.
Optionally, the upper contact layer and a portion of the upper optical field confining layer form the ridge structure;
the semiconductor laser integrated chip also comprises a second dielectric layer, and the second dielectric layer covers the side face of the ridge structure and the platform areas on two sides of the ridge.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a semiconductor laser integrated chip, for manufacturing the semiconductor laser integrated chip provided in the first aspect, including:
preparing a common epitaxial layer;
preparing a first dielectric layer on one side of a common epitaxial layer, and patterning the first dielectric layer to form a plurality of first dielectric structures arranged along a first direction;
preparing a discrete epitaxial layer on one side of the common epitaxial layer and in a region limited by the first dielectric structure;
forming a ridge structure in the epitaxial layer;
preparing a common electrode layer on one side of the common epitaxial layer far away from the discrete epitaxial layer; preparing a discrete electrode layer on one side of the ridge structure far away from the common epitaxial structure;
cleaving the discrete epitaxial layer, the common electrode layer and the discrete electrode layer along a preset cleavage position to form a plurality of discrete epitaxial structures, a plurality of common electrodes and a plurality of discrete electrodes; the preset cleavage position is positioned between two adjacent first medium structures;
the semiconductor laser integrated chip comprises the public epitaxial structure, the first dielectric structure, the discrete epitaxial structure, the public electrode and the discrete electrode; the discrete epitaxial structures comprise a first discrete epitaxial structure and a second discrete epitaxial structure which are independent of each other; the discrete electrodes comprise a first discrete electrode and a second discrete electrode which are independent of each other; along the first direction, the first discrete epitaxial structure and the second discrete epitaxial structure are respectively positioned at two sides of the first dielectric structure; in a second direction, the first discrete epitaxial structure is located on one side of the common epitaxial structure, the first discrete electrode is located on one side of the first discrete epitaxial structure away from the common epitaxial structure, the second discrete epitaxial structure is located on one side of the common epitaxial structure, and the second discrete electrode is located on one side of the second discrete epitaxial structure away from the common epitaxial structure; the first direction intersects the second direction;
the laser emitting unit comprises the public epitaxial structure, the first discrete electrode and the public electrode, and the laser detecting unit comprises the public epitaxial structure, the second discrete electrode and the public electrode;
along the first direction, the laser emitting unit has a first cavity length, the laser detecting unit has a second cavity length, the first dielectric structure has a third cavity length, and the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length, the third cavity length and the second cavity length.
Optionally, preparing a first dielectric layer on one side of the common epitaxial layer includes:
at least two sub-medium layers which are arranged in a laminated mode are prepared on one side of the common epitaxial layer along the first direction, and the refractive indexes of the two adjacent sub-medium layers are different.
Optionally, preparing a common epitaxial layer includes:
preparing a substrate;
preparing a buffer layer on one side of the substrate;
preparing a lower optical field limiting layer on one side of the buffer layer far away from the substrate;
preparing a grating layer on one side of the lower optical field limiting layer far away from the substrate;
preparing a discrete epitaxial layer on one side of the common epitaxial layer and in a region defined by the first dielectric structure, and comprising:
preparing a lower waveguide layer on one side of the grating layer far away from the substrate;
preparing an active region on the side of the lower waveguide layer away from the substrate;
preparing an upper waveguide layer on one side of the active region far away from the substrate;
preparing an upper optical field limiting layer on the side of the upper waveguide layer away from the substrate;
and preparing an upper contact layer on the side of the upper optical field limiting layer far away from the substrate.
Optionally, forming a ridge structure in the epitaxial layer includes:
and etching the upper contact layer and part of the upper optical field limiting layer to form a ridge structure.
Optionally, preparing a common electrode layer on a side of the common epitaxial structure away from the discrete epitaxial structure includes:
thinning the substrate;
preparing a common electrode layer on one side of the substrate far away from the discrete epitaxial structure;
preparing a discrete electrode layer on one side of the ridge structure away from the common epitaxial structure, including:
preparing a second dielectric layer on one side of the ridge structure far away from the substrate, wherein the second dielectric layer covers the upper surface and the side surface of the ridge structure and the platform areas on the two sides of the ridge;
removing the second dielectric layer on the upper surface of the ridge structure, and exposing the upper surface of the upper contact layer;
preparing the discrete electrode layer on the upper surface of the upper contact layer.
The embodiment of the utility model provides a semiconductor laser integrated chip, integrated chip includes laser outgoing unit and laser detection unit, sets up laser outgoing unit and includes public epitaxial structure, first discrete electrode and common electrode, and laser outgoing unit is used for the outgoing laser; the laser detection unit comprises the public epitaxial structure, a second discrete electrode and a public electrode, and is used for detecting the output power of the laser emitting unit. The first medium structures are arranged on two sides of the first discrete epitaxial structure of the laser emitting unit and the second discrete epitaxial structure of the laser detecting unit and used for electrically isolating the laser emitting unit and the laser detecting unit and meeting the requirement of independent work of the laser emitting unit and the laser detecting unit. Furthermore, the laser detection unit can detect the laser output power of the laser emitting unit in real time, so that the injection current of the semiconductor laser can be adjusted according to the detected output power, and the effect of stabilizing the output power of the semiconductor laser is achieved. Meanwhile, due to the fact that the laser detection unit is added, the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length of the laser emitting unit and the second cavity length of the laser detection unit, the total cavity length of the semiconductor laser integrated chip is increased, the semiconductor laser integrated chip is easy to understand in production and preparation, the thermal resistance of the integrated chip is reduced, the production yield of the integrated chip is improved, and the production cost of devices can be remarkably reduced. Through the structural design, the semiconductor laser integrated chip has the advantages of long cavity length, easiness in cleavage, stable output power and the like, so that the performance and reliability of the device are improved, the use scene and the use range of the semiconductor laser are expanded, and the semiconductor laser integrated chip has good market competitiveness.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments made with reference to the following drawings:
fig. 1 is a schematic cross-sectional view of an integrated chip structure of a semiconductor laser according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing an integrated chip of a semiconductor laser according to an embodiment of the present invention;
fig. 3 is a schematic top view of a semiconductor laser integrated chip structure after one epitaxial growth according to an embodiment of the present invention;
fig. 4 is a schematic top view of a semiconductor laser integrated chip structure after secondary epitaxial growth according to an embodiment of the present invention;
fig. 5 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser in fig. 4 along the direction AA';
FIG. 6 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser of FIG. 4 along the direction BB';
fig. 7 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser in fig. 4 along the direction CC';
fig. 8 is a schematic top view of a semiconductor laser integrated chip structure after a ridge structure is etched and prepared according to an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser of fig. 8 along direction DD';
fig. 10 is a schematic cross-sectional view of the semiconductor laser integrated chip of fig. 9 after the second dielectric film is stripped;
FIG. 11 is a schematic top view of a semiconductor laser integrated chip structure after fabrication of discrete electrodes;
fig. 12 is a schematic cross-sectional view of the semiconductor laser integrated chip structure of fig. 11 along the direction FF';
fig. 13 is a schematic cross-sectional view of the semiconductor laser integrated chip of fig. 12 after the common electrode is fabricated;
fig. 14 is a schematic cross-sectional view of the semiconductor laser integrated chip along the direction GG' in fig. 10 after the common electrode is prepared.
The following are the reference signs:
in the figure, 101 is a substrate, 102 is a buffer layer, 103 is a lower optical field confining layer, 104 is a grating layer, 105 is a first dielectric structure, 106 is a lower waveguide layer, 107 is an active region, 108 is an upper waveguide layer, 109 is an upper optical field confining layer, 110 is an upper contact layer, 111 is a ridge structure, 112 is an etching mask, 113 is a second dielectric layer, 114 is a first discrete electrode, 115 is a second discrete electrode, and 116 is a common electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be described in detail through the following embodiments with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some embodiments of the present invention, not all embodiments, and all other embodiments obtained by those skilled in the art without creative efforts based on the embodiments of the present invention all fall into the protection scope of the present invention.
Examples
The embodiment of the utility model provides a semiconductor laser integrated chip can be used to produce preparation DFB laser instrument. Fig. 1 is a schematic cross-sectional view of an integrated chip structure of a semiconductor laser device according to an embodiment of the present invention. As shown in fig. 1, the semiconductor laser integrated chip includes a laser emitting unit 1 and a laser detecting unit 2; the semiconductor laser integrated chip further includes: a common epitaxial structure 3; a first dielectric structure 105 and a discrete epitaxial structure 4 on one side of the common epitaxial structure 3; the discrete epitaxial structure 4 includes a first discrete epitaxial structure 41 and a second discrete epitaxial structure 42 that are independent of each other; along the first direction x, the first discrete epitaxial structure 41 and the second discrete epitaxial structure 42 are respectively located on both sides of the first dielectric structure 105; along the second direction y, the first discrete epitaxial structure 41 and the second discrete epitaxial structure 42 are located on one side of the common epitaxial structure 3; the first direction x intersects the second direction y; a ridge structure (not shown) located in the discrete epitaxial structure 4; a common electrode 116 located on a side of the common epitaxial structure 3 remote from the discrete epitaxial structures 4; a discrete electrode 5 located on the side of the ridge structure away from the common epitaxial structure 3, wherein the discrete electrode 5 comprises a first discrete electrode 114 and a second discrete electrode 115 which are independent of each other, the first discrete electrode 114 is located on the side of the first discrete epitaxial structure 41 away from the common epitaxial structure 3, and the second discrete electrode 115 is located on the side of the second discrete epitaxial structure 42 away from the common epitaxial structure 3; the laser emitting unit 1 comprises a common epitaxial structure 3, a first discrete epitaxial structure 41, a first discrete electrode 114 and a common electrode 116, and the laser detecting unit 2 comprises the common epitaxial structure 3, a second discrete epitaxial structure 42, a second discrete electrode 115 and a common electrode 116; along the first direction x, the laser emitting unit 1 has a first cavity length L1, the laser detecting unit 2 has a second cavity length L2, the first dielectric structure 105 has a third cavity length L3, and the cavity length L of the semiconductor laser integrated chip is the sum of the first cavity length L1, the third cavity length L3 and the second cavity length L2.
Illustratively, as shown in fig. 1, the semiconductor laser integrated chip includes a laser emitting unit 1 and a laser detecting unit 2, the laser emitting unit 1, as a laser part of the semiconductor laser integrated chip, includes a common epitaxial structure 3, a first discrete epitaxial structure 41, a first discrete electrode 114 and a common electrode 116, having a requirement for satisfying laser generation, for emitting laser light; the laser detection unit 2, as a laser power detector portion of the semiconductor laser integrated chip, includes the common epitaxial structure 3, the second discrete epitaxial structure 42, the second discrete electrode 115, and the common electrode 116, and is configured to detect the laser output power output by the laser emission unit 1.
Specifically, the semiconductor laser integrated chip further includes: and a common epitaxial structure 3 serving as a common structure of the laser emission unit 1 and the laser detection unit 2. Further, the first dielectric structure 105 and the discrete epitaxial structure 4 are located on one side of the common epitaxial structure 3, and specifically, the material of the first dielectric structure 105 includes HfO2、 Si、SiO2、SiNx、SiON、Al2O3、AlON、SiAlON、TiO2、Ta2O5、ZrO2And MgO, polysilicon, and the like. The first dielectric structure 105 electrically isolates the laser emitting unit 1 and the laser detecting unit 2 in the semiconductor laser integrated chip,so that the laser emitting unit 1 and the laser detecting unit 2 can operate independently.
Further, as shown in fig. 1, the discrete epitaxial structure 4 includes a first discrete epitaxial structure 41 and a second discrete epitaxial structure 42 that are independent of each other. Specifically, the first direction x is intersected with the second direction y, and the first discrete epitaxial structure 41 and the second discrete epitaxial structure 42 are respectively located on two sides of the first dielectric structure 105 along the first direction x, so that the first discrete epitaxial structure 41 and the second discrete epitaxial structure 42 are electrically isolated due to the existence of the first dielectric structure 105; along the second direction y, the first discrete epitaxial structure 41 and the second discrete epitaxial structure 42 are respectively located on one side of the common epitaxial structure 3. It should be noted that the first discrete epitaxial structure 41 and the second discrete epitaxial structure 42 have the same material, structure, and manufacturing process, and the first discrete epitaxial structure 41 is used as a part of the structure of the laser emitting unit 1, and the second discrete epitaxial structure 42 is used as a part of the structure of the laser detecting unit 2, so that the laser emitting unit 1 and the laser detecting unit 2 work independently.
Further, the common electrode 116 is disposed on one side of the common epitaxial structure 3 away from the discrete epitaxial structure 4, the discrete epitaxial structure 4 and the first dielectric structure 105 are disposed to jointly form a ridge structure (not shown in the figure), and the discrete electrode 5 can be further formed on the upper surface of the ridge structure on one side away from the common epitaxial structure 3 due to the small size of the integrated chip. As shown in fig. 1, the discrete electrode 5 includes a first discrete electrode 114 and a second discrete electrode 115 that are independent of each other, the first discrete electrode 114 is disposed opposite to the common electrode 116, and serves as a conductive electrode pair of the laser emission unit 1, wherein the first discrete electrode 114 is connected to the first discrete epitaxial structure 41 and is located on a side of the first discrete epitaxial structure 41 away from the common epitaxial structure 3; the second discrete electrode 115 is disposed opposite to the common electrode 116, and serves as a conductive electrode pair of the laser detection unit 2, wherein the second discrete electrode 115 is connected to the second discrete epitaxial structure 42 and is located on a side of the second discrete epitaxial structure 42 away from the common epitaxial structure 3. The discrete electrode 5 and the common electrode 116 have good ohmic contact, and the material comprises any one or the combination of more than two of Ni, Ti, Pd, Pt, Au, Al, Cr, TiN, ITO, AuGe, AuGeNi and IGZO, and has conductivity.
Further, by reasonably setting the structure of the first dielectric structure 105, the laser part emitted by the laser emitting unit 1 can enter the laser detecting unit 2 through the first dielectric structure 105. When the laser output power of the laser emitting unit 1 fluctuates, correspondingly, the part of the laser penetrating through the first dielectric structure 105 detected by the laser detecting unit 2 also changes correspondingly, and according to the preset laser power proportional relation, the laser detecting unit 2 is set to feed back the laser output power to the semiconductor laser, so that the injection current of the laser emitting unit can be adjusted according to the change of the laser output power fed back by the laser detecting unit 2, and the purpose of stabilizing the output power of the semiconductor laser is achieved.
In the prior art, the cavity length of the semiconductor laser chip is short, and the embodiment of the present invention provides a laser detection unit 2 and a first dielectric structure 105, referring to fig. 1, along a first direction x, the sum of the first cavity length L1 of the laser emission unit 1, the third cavity length L3 of the first dielectric structure 105 and the second cavity length L2 of the laser detection unit 2 is the cavity length L of the semiconductor laser integrated chip, so that the cavity length of the semiconductor laser integrated chip is increased. Therefore, the integrated chip has the characteristic of long cavity length and is easy to understand, so that the thermal resistance of the device is reduced, the junction temperature of the device during working is reduced, the performance and the production yield of the device can be greatly improved, and the effect of remarkably reducing the cost of the device is achieved.
To sum up, the embodiment of the utility model provides a semiconductor laser integrated chip sets up first dielectric structure and keeps apart laser outgoing unit and laser detection unit electricity through setting up laser outgoing unit and laser detection unit, simultaneously, satisfies the detection requirement of the laser output power of laser detection unit real-time detection laser outgoing unit to can adjust semiconductor laser's injection current according to the output power that detects, reach the effect of stabilizing semiconductor laser output power. Meanwhile, due to the fact that the laser detection unit is added, the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length of the laser emitting unit and the second cavity length of the laser detection unit, the total cavity length of the semiconductor laser integrated chip is increased, the semiconductor laser integrated chip is easy to understand in production and preparation, the thermal resistance of the integrated chip is reduced, the production yield of the integrated chip is improved, and the production cost of devices can be remarkably reduced. Therefore, through the structural design, the semiconductor laser integrated chip has the advantages of long cavity length, easiness in cleavage, stable output power and the like, so that the performance and reliability of the device are improved, the use scene and the use range of the semiconductor laser are expanded, and the semiconductor laser integrated chip has good market competitiveness.
Optionally, along the first direction x, the first dielectric structure 105 includes at least two sub-dielectric structures (not shown in the figure) arranged in a stacked manner; there is a difference in the refractive index n between two adjacent sub-medium structures.
Illustratively, along the first direction x, the first dielectric structure 105 includes at least two sub-dielectric structures arranged in a stack, and the material of the sub-dielectric structures includes HfO2、Si、SiO2、SiNx、SiON、Al2O3、AlON、 SiAlON、TiO2、Ta2O5、ZrO2And MgO, polysilicon, and the like. By reasonably selecting materials of the sub-medium structures and effectively combining the materials, the refractive indexes of two adjacent sub-medium structures are different, so that the first medium structure 105 has a specific transmittance to laser output by the laser emitting unit 1 along the first direction x, the laser part output by the laser emitting unit 1 enters the laser detecting unit 2 through the first medium structure 105, and the laser detecting power requirement of the laser detecting unit 2 is met.
Optionally, with continued reference to FIG. 1, the first cavity length L1 ranges from 50-500 μm; the second chamber length L2 is adjustable.
Illustratively, the cavity length L of the semiconductor laser integrated chip is the sum of the first cavity length L1 of the laser emitting unit 1, the third cavity length L3 of the first dielectric structure 105 and the second cavity length L2 of the laser detecting unit 2. Specifically, the embodiment of the utility model provides a semiconductor laser's laser emission unit 1's first chamber length L1 scope can be in 50-500 μm, and first dielectric structure 105's third chamber length L3 is shorter, can neglect, and it is adjustable to set up the second chamber length L2 of laser detection unit 2, and the scope that can obtain semiconductor laser integrated chip's chamber length L through adjusting the length of second chamber length L2 satisfies 50 μm-5 mm. By the arrangement, the cavity length range of the semiconductor laser integrated chip is greatly increased, the semiconductor laser integrated chip is easy to understand in production and preparation, the performance and the production yield of devices can be greatly improved, the cost of the devices is obviously reduced, and the semiconductor laser integrated chip has good market competitiveness.
As a possible implementation, with continued reference to fig. 1, in the second direction y, the common epitaxial structure 3 includes a substrate 101, a buffer layer 102, a lower optical field confining layer 103, and a grating layer 104, which are arranged in a stack; along the second direction y, the discrete epitaxial structure 4 includes a lower waveguide layer 106(206), an active region 107(207), an upper waveguide layer 108(208), an upper optical field confining layer 109(209), and an upper contact layer 110(210) stacked together.
Specifically, with continued reference to fig. 1, along the second direction y, the common epitaxial structure 3 is a common structure of the laser emission unit 1 and the laser detection unit 2, and includes a substrate 101, a buffer layer 102, a lower optical field limiting layer 103, and a grating layer 104, which are stacked. The substrate material comprises one or the combination of more than two of GaAs, InP, GaN, AlGaN, InGaN, AlN, sapphire, SiC, Si and SOI.
Furthermore, the first dielectric structure 105 can be further arranged to be combined with the grating layer 104, and by reasonably arranging the structure of the first dielectric structure 105, the first dielectric structure 105 is used as a high-reflection film on the rear cavity surface of the laser oscillation resonant cavity of the laser emitting unit 1 in the semiconductor laser integrated chip, so that the reflectivity of the rear cavity surface of the laser oscillation resonant cavity is effectively enhanced while the laser detection unit 2 detects the laser output power, and the laser effective output power is further improved.
The discrete epitaxial structure 4 includes a first discrete epitaxial structure 41 as an important light emitting region of the laser emission unit 1, and the discrete epitaxial structure 4 includes a second discrete epitaxial structure 42 as an important detection region of the laser detection unit 2. Specifically, referring to fig. 1, first discrete epitaxial structure 41 includes a lower waveguide layer 106, an active region 107, an upper waveguide layer 108, an upper field limiting layer 109, and an upper waveguide layer arranged in a stackA contact layer 110; the second discrete epitaxial structure 42 includes a lower waveguide layer 206, an active region 207, an upper waveguide layer 208, an upper optical field confining layer 209, and an upper contact layer 210, which are stacked. It should be noted that the structure, the material and the preparation method of the first discrete epitaxial structure 41 and the second discrete epitaxial structure 42 are completely the same, and are divided according to the different functions in the present invention. Specifically, the materials of the contact layer, confinement layer, waveguide layer and active region include Alx1Iny1Ga1-x1-y1Asx2Py2N1-x2-y2The following relationship is satisfied: x1 is more than or equal to 0 and less than or equal to 1, y1 is more than or equal to 0 and less than or equal to 1, x2 is more than or equal to 0 and less than or equal to 1, y2 is more than or equal to 0 and less than or equal to 1, x1 and y1 are more than or equal to 0 and less than or equal to 1, and x2 and y2 are more than or equal to 0 and less than or equal to.
Optionally, the upper contact layer and a part of the upper optical field limiting layer form a ridge structure; the semiconductor laser integrated chip also comprises a second dielectric layer, and the second dielectric layer covers the side face of the ridge structure and the platform areas on two sides of the ridge.
Illustratively, the upper contact layer and part of the upper optical field limiting layer in the discrete epitaxial structure are arranged to form a ridge structure, the upper surface of the ridge structure is connected with a discrete electrode of the semiconductor laser integrated chip, in order to avoid the existence of leakage current in the side wall of the ridge structure and the platform regions at the two sides of the ridge structure, the semiconductor laser integrated chip further comprises a second dielectric layer, the second dielectric layer is arranged to cover the side surface of the ridge structure and the platform regions at the two sides of the ridge, wherein the material of the second dielectric layer comprises HfO2、Si、SiO2、SiNx、SiON、Al2O3、AlON、 SiAlON、TiO2、Ta2O5、ZrO2And MgO, polysilicon, and the like.
The embodiment of the utility model provides a still provide a semiconductor laser integrated chip's preparation method for prepare above-mentioned embodiment semiconductor laser integrated chip. Fig. 2 is a flowchart of a method for manufacturing an integrated chip of a semiconductor laser according to an embodiment of the present invention; fig. 3 is a schematic top view of a semiconductor laser integrated chip structure after one epitaxial growth according to an embodiment of the present invention; fig. 4 is a schematic top view of a semiconductor laser integrated chip structure after secondary epitaxial growth according to an embodiment of the present invention; fig. 5 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser in fig. 4 along the direction AA'; FIG. 6 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser of FIG. 4 along the direction BB'; fig. 7 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser in fig. 4 along the direction CC'; fig. 8 is a schematic top view of a semiconductor laser integrated chip structure after a ridge structure is etched and prepared according to an embodiment of the present invention; fig. 8 is a schematic cross-sectional view of the integrated chip structure of the semiconductor laser of fig. 8 along direction DD'; fig. 10 is a schematic cross-sectional view of the semiconductor laser integrated chip of fig. 9 after the second dielectric film is stripped; FIG. 11 is a schematic top view of a semiconductor laser integrated chip structure after fabrication of discrete electrodes; fig. 12 is a schematic cross-sectional view of the semiconductor laser integrated chip structure of fig. 11 along the direction FF'; fig. 13 is a schematic cross-sectional view of the semiconductor laser integrated chip of fig. 12 after the common electrode is fabricated; fig. 14 is a schematic cross-sectional view of the semiconductor laser integrated chip along the direction GG' in fig. 10 after the common electrode is prepared. As shown in fig. 2 to 14, the method for manufacturing the semiconductor laser integrated chip includes:
and S01, preparing a common epitaxial layer.
Specifically, a common epitaxial layer 3' of the semiconductor laser integrated chip is prepared by one-time epitaxial growth, as shown in fig. 3.
S02, preparing a first dielectric layer on one side of the common epitaxial layer, and patterning the first dielectric layer to form a plurality of first dielectric structures arranged along a first direction.
Specifically, referring to fig. 4 to 7, a first dielectric film is deposited on a surface of one side of the common epitaxial layer to prepare a first dielectric layer, wherein the material of the first dielectric film includes HfO2、Si、SiO2、SiNx、SiON、 Al2O3、AlON、SiAlON、TiO2、Ta2O5、ZrO2One or more than two of materials such as MgO and polysilicon, and combining with photoetching and etching technology, the first dielectric layer forms a plurality of second dielectric layers arranged with specific intervals along the first direction x in figure 4A dielectric structure 105. The first dielectric structure 105 is mainly used as a mask for epitaxial growth, and prevents an epitaxial layer from growing at the position in the subsequent secondary epitaxial growth process. The distance between two adjacent first dielectric structures 105 is determined according to the cavity length of the semiconductor laser integrated chip in actual production, and is not specifically limited herein.
Furthermore, by reasonably selecting the material of the first dielectric layer and designing the parameters such as the refractive index and the like of the first dielectric layer, the first dielectric structure can be used as a mask for secondary epitaxial growth to prevent the epitaxial layer from growing at the position in the subsequent secondary epitaxial process; the film can be combined with a grating pattern of a grating layer to be used as a cavity surface high-reflection film of a laser in a semiconductor laser integrated chip, so that the cavity surface reflectivity can be effectively enhanced; and simultaneously, the laser emitting unit and the detection unit in the semiconductor laser integrated chip are electrically isolated.
And S03, preparing a discrete epitaxial layer on one side of the common epitaxial layer and in the area limited by the first dielectric structure.
Specifically, as shown with continued reference to fig. 4-7, the discrete epitaxial layers are prepared by means of secondary epitaxial growth on the surface of the common epitaxial layer away from the bottom plate 101 and in the specific pitch region defined by the first dielectric structure 105. As shown in fig. 6 and 7, the discrete epitaxial layers include a lower waveguide layer 106, an active region 107, an upper waveguide layer 108, an upper field limiting layer 109, and an upper contact layer 110 disposed along the grating layer 104 stack. Specifically, the materials of the upper contact layer, the upper optical field limiting layer, the upper waveguide layer and the active region include Alx1Iny1Ga1-x1-y1Asx2Py2N1-x2-y2Wherein the following relationship is satisfied: x1 is more than or equal to 0 and less than or equal to 1, y1 is more than or equal to 0 and less than or equal to 1, x2 is more than or equal to 0 and less than or equal to 1, y2 is more than or equal to 0 and less than or equal to 1, x1 and y1 are more than or equal to 0 and less than or equal to 1, and x2 and y2 are more than or equal to 0 and less than or equal to.
And S04, forming a ridge structure in the epitaxial layer.
Specifically, the prepared epitaxial wafer is cleaned, and further, photoresist is coated on the surface of the epitaxial wafer in a spinning mode, and a ridge-shaped pattern is photoetched. Here, 112 is an etching mask, and dry etching or wet etching is performed to form a ridge structure 111, as shown in fig. 8 and 9. Specifically, as shown in fig. 9, the ridge structure 111 includes a portion of the upper optical field confining layer 109 and the upper contact layer 110.
S05, preparing a common electrode layer on one side of the common epitaxial layer far away from the discrete epitaxial layer; and preparing a discrete electrode layer on one side of the ridge structure far away from the common epitaxial structure.
Specifically, a photoresist is spin-coated on the side of the ridge structure 111 away from the common epitaxial layer for photolithography, and then a plating and lift-off technique is combined to prepare a discrete electrode layer, wherein the discrete electrode layer comprises a first electrode 114 of the laser and a first electrode 115 of the detector, and thermal annealing is performed to form a better ohmic contact metal, as shown in fig. 9 and 10. The common electrode layer 116 is then formed on the surface of the common epitaxial layer of the epitaxial wafer on the side away from the discrete epitaxial layers, i.e., the other side of the substrate, using the same fabrication method, as shown in fig. 13. It should be noted that the order of preparing the common electrode layer and the discrete electrode layer is not limited herein, and the ohmic contact metal includes any one or a combination of two or more of Ni, Ti, Pd, Pt, Au, Al, Cr, TiN, ITO, AuGe, AuGeNi, and IGZO.
S06, cleaving the discrete epitaxial layer, the common electrode layer and the discrete electrode layer along a preset cleavage position to form a plurality of discrete epitaxial structures, a plurality of common electrodes and a plurality of discrete electrodes; the predetermined cleavage position is located between two adjacent first dielectric structures.
Specifically, the preset cleavage position is located between two adjacent first dielectric structures 105, and is determined according to design requirements of a laser cavity length and a detector cavity length of a semiconductor laser integrated chip. As shown by an arrow C in fig. 11, the discrete epitaxial layer, the common electrode layer, and the discrete electrode layer are cleaved along a preset cleavage position, so that the epitaxial wafer forms a plurality of discrete epitaxial structures, a plurality of common electrodes, and a plurality of discrete electrodes, and the plurality of semiconductor laser integrated chips are obtained by cleaving the epitaxial wafer.
The semiconductor laser integrated chip comprises a public epitaxial structure, a first dielectric structure, a discrete epitaxial structure, a public electrode and a discrete electrode; the discrete epitaxial structure comprises a first discrete epitaxial structure and a second discrete epitaxial structure which are independent from each other; the discrete electrodes comprise a first discrete electrode and a second discrete electrode which are independent of each other; along a first direction, the first discrete epitaxial structure and the second discrete epitaxial structure are respectively positioned at two sides of the first dielectric structure; along a second direction, the first discrete epitaxial structure is positioned on one side of the public epitaxial structure, the first discrete electrode is positioned on one side of the first discrete epitaxial structure, which is far away from the public epitaxial structure, the second discrete epitaxial structure is positioned on one side of the public epitaxial structure, and the second discrete electrode is positioned on one side of the second discrete epitaxial structure, which is far away from the public epitaxial structure; the first direction intersects the second direction; the laser emitting unit comprises a public epitaxial structure, a first discrete electrode and a public electrode, and the laser detecting unit comprises a public epitaxial structure, a second discrete electrode and a public electrode; along the first direction, the laser emitting unit has a first cavity length, the laser detecting unit has a second cavity length, and the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length and the second cavity length.
Illustratively, referring to fig. 14 or fig. 1, a single semiconductor laser integrated chip is obtained by a preparation process of scribing, cleaving, plating, and splitting, and the semiconductor laser integrated chip includes the common epitaxial structure 3, the first dielectric structure 105, the discrete epitaxial structure 4, the common electrode 5, and the discrete electrode 116. Specifically, the semiconductor laser integrated chip includes a laser emitting unit 1 and a laser detecting unit 2, the laser emitting unit 1 is used as a laser part of the semiconductor laser integrated chip, and includes a common epitaxial structure 3, a first discrete epitaxial structure 41, a first discrete electrode 114 and a common electrode 116, and has a necessary condition for satisfying laser generation, and is used for emitting laser; the laser detection unit 2, as a laser power detector portion of the semiconductor laser integrated chip, includes the common epitaxial structure 3, the second discrete epitaxial structure 42, the second discrete electrode 115, and the common electrode 116, and is configured to detect the laser output power output by the laser emission unit 1. Along the X direction, the first dielectric structure 105 electrically isolates the light emitting unit 1 from the laser detecting unit 2, and the detection requirement of the laser detecting unit for detecting the laser output power of the laser emitting unit in real time is met, so that the injection current of the semiconductor laser can be adjusted according to the detected output power, and the effect of stabilizing the output power of the semiconductor laser is achieved.
Meanwhile, along the x direction, the sum of the first cavity length L1 of the laser emitting unit 1 and the second cavity length L2 of the laser detecting unit 2 is the cavity length L of the semiconductor laser integrated chip. The cavity length is long, the cavity is easy to understand, the thermal resistance of the device is further reduced, the junction temperature of the device during working is reduced, the performance and the production yield of the device can be greatly improved, and the effect of remarkably reducing the cost of the device is achieved.
To sum up, the embodiment of the utility model provides a pair of semiconductor laser integrated chip's preparation method, through adopting the first dielectric structure of one side growth preparation at public epitaxial structure, set up first dielectric structure and keep apart laser outgoing unit and laser detection unit electricity, and the cleavage obtains the cavity length L of the semiconductor laser integrated chip of the first cavity length L1 of laser outgoing unit and the second cavity length L2 sum of laser detection unit, the semiconductor laser integrated chip that this preparation method obtained has the cavity length, easily cleavage and output advantage such as stable, thereby the performance and the reliability of device have been improved, semiconductor laser's use scene and application range have been expanded, have fine market competition.
Optionally, preparing a first dielectric layer on one side of the common epitaxial layer includes:
at least two sub-medium layers which are arranged in a laminated mode are prepared on one side of a common epitaxial layer along a first direction, and the refractive indexes of the two adjacent sub-medium layers are different.
In particular, with continued reference to fig. 7, along the x-direction, the common epitaxial layer is provided to include at least two sub-dielectric structures arranged in a stack, the sub-dielectric structures being made of a material including HfO2、Si、SiO2、SiNx、SiON、Al2O3、AlON、SiAlON、TiO2、Ta2O5、ZrO2One or more than two of materials such as MgO, polysilicon and the like are combined, the refractive indexes of two adjacent sub-medium structures are different according to the different refractive indexes, and the materials are reasonably selectedThe materials of the sub-medium structures are selected and effectively combined, so that the first medium structure 105 formed by the first medium layer has a specific transmittance along the first direction x, the laser part output by the semiconductor laser enters the detector of the semiconductor laser through the first medium structure 105, and the requirement of the detector for detecting the laser power is met.
Alternatively, referring to fig. 6 and 7, a common epitaxial layer is prepared, including:
a substrate is prepared.
A buffer layer is prepared on one side of the substrate.
A lower optical field confining layer is prepared on the side of the buffer layer remote from the substrate.
And preparing a grating layer on the side of the lower optical field limiting layer far away from the substrate.
Specifically, a substrate material is provided, which includes any one or a combination of two or more of GaN, AlN, AlGaN, InGaN, AlInGaN, sapphire, SiC, Si, and SOI, a substrate 101 is prepared, a buffer layer 102 is prepared in a direction away from the substrate 101 in a one-time epitaxial growth manner, a lower optical field confining layer 103 is prepared on a side of the buffer layer 102 away from the substrate 201, and a grating layer 104 is prepared on a side of the lower optical field confining layer 103 away from the substrate 101, as shown in fig. 6 and 7.
Further, a photoresist is coated on the surface of the co-epitaxial layer in a spinning mode, a grating pattern is prepared on the surface of the grating layer 104 by using technologies such as electron beam exposure or holographic exposure, and then the grating pattern is transferred into the grating layer 104 through dry etching or wet etching.
Preparing a discrete epitaxial layer on one side of the common epitaxial layer and in a region defined by the first dielectric structure, comprising:
and preparing a lower waveguide layer on the side of the grating layer far away from the substrate.
An active region is prepared on a side of the lower waveguide layer remote from the substrate.
An upper waveguide layer is prepared on the side of the active region remote from the substrate.
An upper optical field limiting layer is prepared on the side of the upper waveguide layer far away from the substrate.
And preparing an upper contact layer on the side of the upper optical field limiting layer far away from the substrate.
Specifically, as shown in fig. 4-7, the preparation of the discrete epitaxial layer on the common epitaxial layer side and in the region defined by the first dielectric structure 105 specifically includes: a lower waveguide layer 106 is provided on a side of the grating layer 104 remote from the substrate 101, an active region 107 is provided on a side of the lower waveguide layer 106 remote from the substrate 101, an upper waveguide layer 108 is provided on a side of the active region 107 remote from the substrate 101, an upper optical field confining layer 109 is provided on a side of the upper waveguide layer 108 remote from the substrate 101, and an upper contact layer 110 is provided on a side of the upper optical field confining layer 109 remote from the substrate 101. Wherein the materials of the contact layer, the confinement layer, the waveguide layer and the active region comprise
Alx1Iny1Ga1-x1-y1Asx2Py2N1-x2-y2The following relationship is satisfied: x1 is more than or equal to 0 and less than or equal to 1, y1 is more than or equal to 0 and less than or equal to 1, x2 is more than or equal to 0 and less than or equal to 1, y2 is more than or equal to 0 and less than or equal to 1, x1 and y1 are more than or equal to 0 and less than or equal to 1, and x2 and y2 are more than or equal to 0 and less than or equal to.
Alternatively, referring to fig. 8 and 9, forming a ridge structure in the epitaxial layer includes: and etching the upper contact layer and part of the optical field limiting layer to form a ridge structure.
Specifically, the upper contact layer 110 and a portion of the optical field limiting layer 109 are etched by dry etching or wet etching to form a ridge structure 111, as shown in fig. 8 and 9.
Alternatively, referring to fig. 12 and 13, the preparing the common electrode layer on the side of the common epitaxial structure away from the discrete epitaxial structures includes:
and thinning the substrate.
And preparing a common electrode layer on one side of the substrate far away from the discrete epitaxial structure.
Specifically, the side of the substrate 101 of the common epitaxial structure, which is away from the discrete epitaxial structure, is thinned, and a common electrode layer is prepared by depositing ohmic metal on the side of the thinned substrate 101 in a manner of depositing ohmic metal, and is used as the common electrode 116 of the integrated chip laser and the detector of the semiconductor laser, as shown in fig. 12 and 13. The common electrode layer is made of a material including any one or a combination of more than two of Ni, Ti, Pd, Pt, Au, Al, Cr, TiN, ITO, AuGe, AuGeNi and IGZO.
Preparing a discrete electrode layer on a side of the ridge structure away from the common epitaxial structure, comprising:
and preparing a second dielectric layer on one side of the ridge structure far away from the substrate, wherein the second dielectric layer covers the upper surface and the side surface of the ridge structure and the platform areas on two sides of the ridge.
And removing the second dielectric layer on the upper surface of the ridge structure and exposing the upper surface of the upper contact layer.
A discrete electrode layer is prepared on the upper surface of the upper contact layer.
Specifically, a second dielectric film is deposited on the surface of the ridge structure on the side away from the substrate 101 to form a second dielectric layer 113, and the second dielectric film covers the upper surface and the side surfaces of the ridge structure and the platform regions on the two sides of the ridge structure. The second dielectric film material comprises HfO2、Si、SiO2、SiNx、SiON、Al2O3、AlON、SiAlON、 TiO2、Ta2O5、ZrO2And MgO, polysilicon, and the like, and has insulating properties. Further, the photoresist on the upper surface of the upper contact layer 110 in the ridge structure is stripped, as shown in fig. 10. Further, ohmic metal is deposited on the upper surface of the upper contact layer 110 to prepare a discrete electrode layer, which is used as a discrete electrode of the semiconductor laser integrated chip. The second dielectric layer 113 is here mainly used to passivate the side walls of the ridge structure of the laser, while electrically insulating the discrete electrodes from the side walls of the ridge structure and from both sides of the ridge structure.
As a possible implementation, a specific example is given to prepare an indium phosphide (InP) -based DFB laser based on the method for preparing a laser diode chip provided in the above example. With continued reference to fig. 3-14, a specific method of preparation includes:
an n-InP buffer layer with the thickness of 1 mu m, an n-InP optical field limiting layer with the thickness of 1 mu m and an InAlGaAs grating layer with the thickness of 100nm are grown on an n-type InP substrate by adopting Metal Organic Chemical Vapor Deposition (MOCVD) equipment, as shown in figure 3.
Spin-coating photoresist on the surface of the epitaxial wafer, preparing a first-order grating pattern on the surface of the grating layer by using technologies such as electron beam exposure or holographic exposure, and then transferring the grating pattern into the grating layer by etching through Inductively Coupled Plasma (ICP) or performing wet etching through a mixed solution of sulfuric acid, hydrogen peroxide and water.
Depositing SiO with the thickness of 200nm on the surface of an epitaxial wafer2A first dielectric film is formed and patterned in conjunction with photolithography and etching techniques, followed by cleaning of the epitaxial wafer.
And carrying out secondary epitaxial growth on the surface of the epitaxial wafer, wherein the secondary epitaxial growth specifically comprises a 100nm AlGaAs lower waveguide layer, a 10-pair AlGaInAs strained multiple quantum well with the period thickness of 12nm, a 200nm InAlGaAs upper waveguide layer, a 1.5-micron p-InP optical field limiting layer and a 100nm p-InGaAs contact layer, and forming a laser structure, as shown in the figures 4, 5, 6 and 7.
Cleaning the epitaxial wafer, spin-coating a photoresist on the surface of the epitaxial wafer, photoetching a ridge pattern, and then performing Inductively Coupled Plasma (ICP) etching or wet etching with a mixed solution of hydrogen peroxide sulfate and water to form a ridge waveguide, as shown in fig. 8 and 9.
A second dielectric film of 250nm SiN was deposited on the epitaxial wafer surface and subsequently stripped with photoresist over the ridge, as shown in fig. 10.
Spin-coating photoresist on the surface of the epitaxial wafer for photoetching, then combining coating and stripping technologies to prepare the first electrode Ti/Au of the laser, and carrying out thermal annealing to form better ohmic contact, as shown in FIG. 11 and FIG. 12.
The epitaxial wafer is thinned, ground, polished, etc., followed by the fabrication of the common electrode Ni/AuGe/Ni/Au on the substrate side of the epitaxial wafer, as shown in fig. 13 and 14, followed by thermal annealing to form a better ohmic contact.
And carrying out scribing, cleavage, film coating and splitting to form an integrated chip tube core of the indium phosphide (InP) base DFB laser.
In summary, by using the method for manufacturing the semiconductor laser integrated chip provided by the embodiment of the present invention, an indium phosphide (InP) -based DFB laser is manufactured. Wherein, indium phosphide (InP) base DFB laser's integrated chip contains two parts of laser instrument and detector, and integrated chip's length comprises laser instrument chamber length and detector length, and integrated chip total length is longer, consequently, the embodiment of the utility model provides a semiconductor laser integrated chip chamber length, easy cleavage. In addition, the detector can also detect the output optical power of laser instrument to the output power that detects according to the detector adjusts the injection current of laser instrument, thereby stabilizes the output of laser instrument, consequently the embodiment of the utility model provides a semiconductor laser integrated chip has very good output stability. Above-mentioned advantage can promote device performance and production yield by a wide margin, is showing and reduces the device cost, makes the embodiment provides a semiconductor laser integrated chip has fine market competition.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, but that the features of the various embodiments of the invention may be partially or fully coupled to each other or combined and may cooperate with each other and be technically driven in various ways. Numerous obvious variations, rearrangements, combinations, and substitutions will now occur to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (5)
1. The semiconductor laser integrated chip is characterized by comprising a laser emitting unit and a laser detecting unit;
the semiconductor laser integrated chip further includes:
a common epitaxial structure;
a first dielectric structure and a discrete epitaxial structure on one side of the common epitaxial structure; the discrete epitaxial structures comprise a first discrete epitaxial structure and a second discrete epitaxial structure which are independent of each other; along a first direction, the first discrete epitaxial structure and the second discrete epitaxial structure are respectively positioned on two sides of the first dielectric structure; in a second direction, the first and second discrete epitaxial structures are on a same side of the common epitaxial structure; the first direction intersects the second direction;
a ridge structure located in the discrete epitaxial structure;
the common electrode is positioned on one side of the common epitaxial structure, which is far away from the discrete epitaxial structure; the discrete electrodes are positioned on one side of the ridge structure, which is far away from the common epitaxial structure, and comprise a first discrete electrode and a second discrete electrode which are independent of each other, the first discrete electrode is positioned on one side of the first discrete epitaxial structure, which is far away from the common epitaxial structure, and the second discrete electrode is positioned on one side of the second discrete epitaxial structure, which is far away from the common epitaxial structure;
the laser emitting unit comprises the public epitaxial structure, the first discrete electrode and the public electrode, and the laser detecting unit comprises the public epitaxial structure, the second discrete electrode and the public electrode;
along the first direction, the laser emitting unit has a first cavity length, the laser detecting unit has a second cavity length, the first dielectric structure has a third cavity length, and the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length, the third cavity length and the second cavity length.
2. The semiconductor laser integrated chip of claim 1, wherein along the first direction, the first dielectric structure comprises at least two sub-dielectric structures arranged in a stack;
there is a difference in refractive index between two adjacent sub-medium structures.
3. The semiconductor laser integrated chip of claim 1, wherein the first cavity length ranges from 50-500 μ ι η; the second cavity is adjustable in length.
4. A semiconductor laser integrated chip according to claim 1, wherein along the second direction, the common epitaxial structure comprises a stacked substrate, a buffer layer, a lower optical field confining layer, and a grating layer;
along the second direction, the discrete epitaxial structure comprises a lower waveguide layer, an active region, an upper waveguide layer, an upper optical field limiting layer and an upper contact layer which are arranged in a stacked mode.
5. A semiconductor laser integrated chip as claimed in claim 4 wherein said upper contact layer and a portion of said upper optical field confining layer form said ridge structure;
the semiconductor laser integrated chip also comprises a second dielectric layer, and the second dielectric layer covers the side face of the ridge structure and the platform areas on two sides of the ridge.
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| CN115000805A (en) * | 2022-07-18 | 2022-09-02 | 度亘激光技术（苏州）有限公司 | Chip and semiconductor laser |
| CN115000805B (en) * | 2022-07-18 | 2022-11-25 | 度亘激光技术（苏州）有限公司 | Chip and semiconductor laser |
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