CN213680980U - Thermal field device for improving material melting efficiency - Google Patents
Thermal field device for improving material melting efficiency Download PDFInfo
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- CN213680980U CN213680980U CN202021710783.XU CN202021710783U CN213680980U CN 213680980 U CN213680980 U CN 213680980U CN 202021710783 U CN202021710783 U CN 202021710783U CN 213680980 U CN213680980 U CN 213680980U
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Abstract
The utility model discloses a promote thermal field device of material melting efficiency relates to single crystal growing furnace equipment technical field, and the main objective improves the efficiency that single crystal growing furnace melted the material. The utility model discloses a main technical scheme does: promote thermal field device of material melting efficiency, the device includes: a first heater, a second heater and a third heater; the first heater comprises a first bent plate and a plurality of first supporting plates, the first bent plate surrounds the upper part of the shaft side of the crucible, one end of each first supporting plate is connected with the first bent plate, and the other end of each first supporting plate is connected with the bottom electrode; the second heater comprises a second bent plate and a plurality of second supporting plates, the second bent plate surrounds the lower part of the shaft side of the crucible, one end of each second supporting plate is connected to the first bent plate, and the other end of each second supporting plate is connected to the bottom electrode; the third heater is arranged at the bottom of the crucible and surrounds the crucible shaft.
Description
Technical Field
The utility model relates to a single crystal growing furnace equipment technical field especially relates to a promote thermal field device of material melting efficiency.
Background
The thermal field of the single crystal furnace consists of a heating and heat-preserving system and a graphite element and forms a temperature field with certain temperature distribution. The graphite component mainly comprises: a heater, a heat preservation cylinder, a furnace bottom protection disc, an upper heat preservation cover and other components.
The quality of the thermal field directly influences the quality and the productivity of the single crystal rod. The most important part of the thermal field is the heater which can stably and continuously provide energy for the single crystal furnace. When the heater fails, the single crystal furnace loses the only heat source.
The power supply of the heater of the single crystal furnace is a constant power supply, the power supply supplies direct current low voltage, direct current high current is generated through the low-resistance graphite heater, and the high current is utilized to generate heat to provide heat energy for the single crystal furnace.
The common heater is a cylinder type and is divided into the following parts from top to bottom: cooling zone, high temperature zone, low temperature zone. Cooling the temperature zone: the heating effect is gradually enhanced from top to bottom; high temperature zone: the part is a core heating part of the heater, and the heating effect is gradually weakened from the middle part of the high-temperature area to the two sides of the high-temperature area; a low-temperature region: this part is the worst heated part. At present, in order to reduce the oxygen content in the single crystal rod, the width of a heating area of a heater is half or even narrower than that of a heater at the early stage, and although the purpose of reducing the oxygen content is achieved by the heater, the material melting time is correspondingly prolonged.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a thermal field device for improving melting efficiency, which mainly aims to improve melting efficiency of a single crystal furnace.
In order to achieve the above object, the utility model mainly provides the following technical scheme:
the utility model provides a promote thermal field device of material melting efficiency, the device includes: a first heater, a second heater and a third heater;
the first heater comprises a first bent plate and a plurality of first supporting plates, the first bent plate surrounds the upper part of the shaft side of the crucible, one end of each first supporting plate is connected with the first bent plate, and the other end of each first supporting plate is connected with the bottom electrode;
the second heater comprises a second bent plate and a plurality of second supporting plates, the second bent plate surrounds the lower part of the shaft side of the crucible, one end of each second supporting plate is connected to the first bent plate, and the other end of each second supporting plate is connected to the bottom electrode;
the third heater is arranged at the bottom of the crucible and surrounds the crucible shaft;
the first bent plate and the crucible are spaced at a first interval, the second bent plate and the crucible are spaced at a second interval, the first interval is smaller than the second interval, and the first support plate penetrates through the second interval.
The purpose of the utility model and the technical problem thereof can be further realized by adopting the following technical measures.
Optionally, the first support plates are symmetrically distributed around the central axis of the crucible.
Optionally, the second support plates are distributed symmetrically about the central axis of the crucible.
Optionally, the distance between the first support plate and the second curved plate is 15 mm.
Borrow by above-mentioned technical scheme, the utility model discloses at least, have following advantage:
when the single crystal furnace operates, the first path of direct current sequentially flows through the furnace bottom electrode, the first supporting plate and the first bent plate, the first bent plate converts electric energy into heat energy, and the heat energy is radiated to the upper half part of the crucible; the second path of direct current flows through the furnace bottom electrode, the second supporting plate and the second bent plate in sequence, the second bent plate converts electric energy into heat energy, and the heat energy is radiated to the lower half part of the crucible; the third path of direct current flows to the third heater, and the third heater converts the electric energy into heat energy and radiates the heat energy to the bottom of the crucible. Therefore, in the process of melting the silicon raw material, the crucible is heated in all directions, and the melting efficiency of the single crystal furnace is improved.
Drawings
Fig. 1 is a schematic structural view of a thermal field device for improving material melting efficiency provided by an embodiment of the present invention.
Reference numerals in the drawings of the specification include: the crucible heating device comprises a first bent plate 1, a first support plate 2, a crucible 3, a second bent plate 4, a second support plate 5, a third heater 6 and a crucible shaft 7.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the intended purpose of the present invention, the following detailed description is given with reference to the accompanying drawings and preferred embodiments, in order to explain the detailed embodiments, structures, features and effects of the present invention. In the following description, different "one embodiment" or "an embodiment" refers to not necessarily the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
As shown in fig. 1, an embodiment of the present invention provides a thermal field apparatus for improving material melting efficiency, which includes: a first heater, a second heater, and a third heater 6;
the first heater comprises a first bent plate 1 and a plurality of first supporting plates 2, the first bent plate 1 surrounds the upper part of the shaft side of the crucible 3, one end of each first supporting plate 2 is connected with the first bent plate 1, and the other end is connected with a furnace bottom electrode;
the second heater comprises a second curved plate 4 and a plurality of second supporting plates 5, the second curved plate 4 surrounds the lower part of the shaft side of the crucible 3, one end of each second supporting plate 5 is connected with the first curved plate 1, and the other end is connected with a furnace bottom electrode;
the third heater 6 is arranged at the bottom of the crucible 3, and the third heater 6 surrounds the crucible shaft 7.
The working process of the thermal field device for improving the material melting efficiency is as follows:
when the single crystal furnace operates, the first path of direct current sequentially flows through the furnace bottom electrode, the first supporting plate 2 and the first bent plate 1, the first bent plate 1 converts electric energy into heat energy, and the heat energy is radiated to the upper half part of the crucible 3; a second path of direct current flows through the furnace bottom electrode, the second supporting plate 5 and the second bent plate 4 in sequence, the second bent plate 4 converts electric energy into heat energy, and the heat energy is radiated to the lower half part of the crucible 3; the third direct current flows to the third heater 6, and the third heater 6 converts the electric energy into heat energy and radiates the heat energy to the bottom of the crucible 3.
In the technical proposal of the utility model, the crucible 3 is heated in all directions in the process of melting the silicon raw material, thereby improving the melting efficiency of the single crystal furnace.
Specifically, the first curved flap 1 and the second curved flap 4 are respectively in a snake shape; the first bent plates 1 are connected end to form an annular structure and surround the upper half part of the axial side of the crucible 3; the second curved plate 4 is connected end to form an annular structure and surrounds the lower half part of the shaft side of the crucible 3.
Specifically, the first curved plate 1, the first support plate 2, the second curved plate 4 and the second support plate 5 are made of graphite materials respectively; the third heater 6 is composed of a plurality of concentric graphite rings, which are connected in sequence to fix the positional relationship between the adjacent rings, and the rings are connected to the furnace bottom electrode.
Specifically, the electrode is a copper electrode, an electrode hole is formed in the bottom surface of the single crystal furnace, and the electrode penetrates through the electrode hole to supply power to the first heater, the second heater and the third heater 6 in the single crystal furnace. An asbestos heat-insulating layer is laid on the inner surface of the bottom of the single crystal furnace to prevent heat in the single crystal furnace from dissipating.
In the specific embodiment, a plurality of the first support plates 2 are distributed in a central symmetry with respect to the central axis of the crucible 3.
In the present embodiment, specifically, the plurality of first supporting plates 2 are uniformly distributed below the first curved plates 1 to jointly bear the weight of the first curved plates 1, so that the centers of gravity of the first curved plates 1 and the geometric centers of the first curved plates 1 coincide to optimize the load-bearing structure of the first heater.
In the specific embodiment, a plurality of the second support plates 5 are distributed symmetrically about the central axis of the crucible 3.
In the present embodiment, in particular, the plurality of second supporting plates 5 are uniformly distributed below the second curved plates 4 to jointly bear the weight of the second curved plates 4, so that the centers of gravity of the second curved plates 4 and the geometric centers of the second curved plates 4 coincide to optimize the load-bearing structure of the second heater.
As shown in fig. 1, in the embodiment, the first bent plate 1 and the crucible 3 are spaced apart by a first distance, the second bent plate 4 and the crucible 3 are spaced apart by a second distance, the first distance is smaller than the second distance, and the first support plate 2 penetrates through the second distance.
In the present embodiment, specifically, since the first interval is smaller than the second interval, the first bent plate 1 is closer to the crucible shaft 7 side than the second bent plate 4. Therefore, when the silicon material is melted, the heat radiated from the first curved plate 1 to the upper half part of the crucible 3 is more than the heat radiated from the second curved plate 4 to the lower half part of the crucible 3 in unit time, namely, the temperature of the gas phase component rises faster on the upper surface of the liquid level of the silicon melt in the crucible 3, so that the temperature rise of oxygen in the gas phase component is accelerated, and the removal of the silicon material oxygen is accelerated by matching the action of the exhaust and vacuum pumping unit on the side of the single crystal furnace.
As shown in fig. 1, in a particular embodiment the first support plate 2 and the second curved flap 4 are at a distance of 15 mm.
In the present embodiment, specifically, since the first support plate 2 and the second support plate 5 are connected to electrodes having different furnace bottoms, respectively, the current flowing through the first heater and the current flowing through the second heater are independent of each other, and in order to avoid the independent currents from communicating with each other, it is necessary to maintain a safety distance of 15mm between the first support plate 2 and the second bent plate 4, and to set the maximum voltage of the power source to which the electrodes are connected, to avoid the current from breaking down the safety distance.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (4)
1. A thermal field device for improving material melting efficiency is characterized by comprising:
a first heater including a first bent plate surrounding an upper portion of the crucible in an axial direction and a plurality of first support plates each having one end connected to the first bent plate and the other end connected to the bottom electrode;
a second heater including a second curved plate surrounding a lower portion of the crucible on an axial side thereof and a plurality of second supporting plates each having one end connected to the first curved plate and the other end connected to the bottom electrode;
the third heater is arranged at the bottom of the crucible and surrounds the crucible shaft;
the first bent plate and the crucible are spaced at a first interval, the second bent plate and the crucible are spaced at a second interval, the first interval is smaller than the second interval, and the first support plate penetrates through the second interval.
2. The thermal field device for improving material melting efficiency according to claim 1,
the first support plates are distributed in a central symmetry mode relative to the central axis of the crucible.
3. The thermal field device for improving material melting efficiency according to claim 1,
the second support plates are distributed in a central symmetry mode relative to the central axis of the crucible.
4. The thermal field device for improving the material melting efficiency according to any one of claims 1 to 3,
the distance between the first supporting plate and the second curved plate is 15 mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021710783.XU CN213680980U (en) | 2020-08-17 | 2020-08-17 | Thermal field device for improving material melting efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021710783.XU CN213680980U (en) | 2020-08-17 | 2020-08-17 | Thermal field device for improving material melting efficiency |
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| CN213680980U true CN213680980U (en) | 2021-07-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116926657A (en) * | 2023-08-24 | 2023-10-24 | 清电光伏科技有限公司 | Thermal field mechanism and single crystal furnace with same |
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2020
- 2020-08-17 CN CN202021710783.XU patent/CN213680980U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116926657A (en) * | 2023-08-24 | 2023-10-24 | 清电光伏科技有限公司 | Thermal field mechanism and single crystal furnace with same |
| CN116926657B (en) * | 2023-08-24 | 2024-05-31 | 清电硅业有限公司 | Thermal field mechanism and single crystal furnace with same |
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