CN213658145U - Diffused silicon pressure sensor - Google Patents

Diffused silicon pressure sensor Download PDF

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Publication number
CN213658145U
CN213658145U CN202022655474.3U CN202022655474U CN213658145U CN 213658145 U CN213658145 U CN 213658145U CN 202022655474 U CN202022655474 U CN 202022655474U CN 213658145 U CN213658145 U CN 213658145U
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sensor
sensor body
sealing rubber
cover plate
pressure sensor
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CN202022655474.3U
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Chinese (zh)
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曹文君
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Wuxi Walson Sensor Technology Co ltd
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Wuxi Walson Sensor Technology Co ltd
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Abstract

The utility model particularly relates to a diffused silicon pressure sensor, which comprises a sensor body, wherein the bottom end in the cavity arranged at the inner side of the sensor body is provided with a basal body, the surface of the basal body is provided with ceramic adhesive at the two sides of a silicon oil piece, the upper end of the ceramic adhesive is provided with a multi-stage silicon chip at the inner part of the sensor body, the outer surface of the sensor body is provided with an anti-collision buffer piece, the inner part of the anti-collision buffer piece is provided with a buffer damping layer, the end surface of the anti-collision buffer piece is provided with a sealing rubber cover plate in a sealing way, when the sensor body is used by combining the buffer damping layer and the buffer cotton in the anti-collision buffer piece, the force of the impact force and the absorption and dispersion of the force are effectively reduced under the condition that the sensor body is subjected to the external impact force, so that, just the utility model relates to a simple structure improves diffusion silicon pressure sensor protecting effect in the use.

Description

Diffused silicon pressure sensor
Technical Field
The utility model belongs to the technical field of diffusion silicon pressure sensor, concretely relates to diffusion silicon pressure sensor.
Background
The diffusion silicon wafer pressure sensor is the most common sensor in industrial practice, is widely applied to various industrial automatic control environments, relates to various industries such as water conservancy and hydropower, railway traffic, intelligent buildings, production automatic control, aerospace, military industry, petrifaction, oil wells, electric power, ships, machine tools, pipelines and the like, and simply introduces the principles and applications of some common sensors. In addition, a medical pressure sensor is arranged. The pressure sensor is mainly based on a mechanical structure type device, and indicates pressure by deformation of an elastic element, but the structure is large in size and heavy in weight, and cannot provide electrical output. With the development of semiconductor technology, semiconductor pressure sensors have come to be developed. The pressure of a medium to be detected of the diffused silicon pressure sensor directly acts on a diaphragm (stainless steel or ceramic) of the sensor, so that the diaphragm generates micro displacement in direct proportion to the pressure of the medium, the resistance value of the sensor is changed, the change is detected by an electronic circuit and is converted to output a standard measurement signal corresponding to the pressure, and the existing diffused silicon chip sensor is generally not installed and used by adopting a protection part.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a diffusion silicon pressure sensor to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: a diffused silicon pressure sensor comprises a sensor body, wherein a base body is arranged at the bottom end in a cavity arranged on the inner side of the sensor body, a single-stage isolation diaphragm is arranged on the base body, the upper end of the single-stage isolation diaphragm is connected with a silicon oil piece, a pressure chip is arranged inside the end face of the silicon oil piece, ceramic adhesives are arranged on the surface of the base body and positioned on two sides of the silicon oil piece, a multi-stage silicon wafer is arranged on the upper end of each ceramic adhesive and positioned inside the sensor body, a temperature compensation circuit board is arranged on the end face of the multi-stage silicon wafer, signal wire seats are arranged on two sides of the end face of the temperature compensation circuit board and positioned inside the sensor body, signal leading-out wires are connected onto the signal wire seats, an anti-collision buffer piece is arranged on the outer face of the sensor body, a buffer layer is uniformly arranged inside, lead grooves are transversely and symmetrically formed in the end face of the sealing rubber cover plate.
As a further optimization of the technical scheme, the multistage silicon chip is connected with the substrate through ceramic adhesive.
As a further optimization of the technical scheme, buffering cotton is filled between buffering shock absorption layers arranged inside the anti-collision buffer piece.
As a further optimization of the technical scheme, one end of the signal outgoing line connected to the signal line seat extends to the outside of the end face of the sealing rubber cover plate through a lead groove arranged on the sealing rubber cover plate, and the surface of the sealing rubber cover plate is provided with an insulating waterproof coating.
As the further optimization of the technical scheme, the elastic protection block is arranged on one surface of the sealing rubber cover plate, which is positioned in the sensor body, and the glass colloid is filled between the sealing rubber cover plate and the temperature compensation circuit board and between the sealing rubber cover plate and the signal wire seat.
As the further optimization of the technical scheme, the anti-collision buffer part is fixedly bonded with the outer surface of the sensor body through the double-sided colloid, and the outer surface of the anti-collision buffer part is provided with the anti-scraping coating.
The utility model discloses a technological effect and advantage: the diffused silicon pressure sensor comprises a sensor body, an anti-collision buffer piece and a protective layer, wherein the anti-collision buffer piece is arranged outside the sensor body through double-sided adhesive tape pasting, the protective layer can effectively protect the sensor body, the phenomenon that the sensor body is damaged due to external factors is further effectively avoided, the anti-collision buffer piece is used through combination between an internal buffering shock absorption layer and buffering cotton, when the sensor body is subjected to external impact force, the force of the impact force and the absorption dispersion of the force are effectively reduced, components inside the sensor body cannot be damaged under the action of the impact force, the problem that the surface of the body cannot be scratched in the process of disassembling and installing the sensor body can be prevented through the arrangement of a scratch-proof coating on the external surface of the anti-collision buffer piece, an elastic protective block is arranged on one side of the inside of the sensor body through a sealing rubber cover plate, and the sealing rubber, The setting that is equipped with the glass colloid is filled between the signal line seat, plays the protection to sensor body inner member and does, prevents to damage, and the effect of glass colloid is exactly to the effect of the all-round parcel fixed protection of spare part on the temperature compensation circuit board, and the setting of insulating waterproof coating on the sealing rubber apron moreover can carry out the waterproof dirt-proof effect of parcel to the sensor body, just the utility model relates to a simple structure improves diffusion silicon pressure sensor protecting effect in the use, and improves the characteristic of resisting wear, shock resistance and vibration of sensor.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic top view of the present invention;
fig. 3 is a schematic view of the external structure of the present invention.
In the figure: 1. a sensor body; 2. a substrate; 3. a single stage isolation diaphragm; 4. a pressure chip; 5. a ceramic binder; 6. a silicone oil member; 7. a multi-stage silicon wafer; 8. a temperature compensation circuit board; 9. a signal wire base; 10. a buffer damping layer; 11. a signal outlet; 12. sealing the rubber cover plate; 13. a lead slot; 14. an elastic protection block; 15. glass colloid; 16. an insulating waterproof coating; 17 a scratch-resistant coating; 18. anticollision bolster.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides a technical solution: the utility model provides a diffusion silicon pressure sensor, including sensor body 1, base member 2 is installed to the intracavity portion bottom that the inboard of sensor body 1 was equipped with, install single-stage separation diaphragm 3 on base member 2, the upper end of single-stage separation diaphragm 3 is connected with silicon oil piece 6, the inside pressure chip 4 that is equipped with of terminal surface of silicon oil piece 6, the both sides that the surface of base member 2 is located silicon oil piece 6 are equipped with ceramic adhesive 5, the upper end of ceramic adhesive 5 is located sensor body 1 inside and is equipped with multistage silicon chip 7, be connected through ceramic adhesive 5 between multistage silicon chip 7 and the base member 2, warm-up circuit board 8 is installed to the terminal surface of multistage silicon chip 7, the inside that the terminal surface both sides of warm-up circuit board 8 are located sensor body 1 is equipped with signal wire seat 9, all be connected with signal.
The external surface of the sensor body 1 is provided with an anti-collision buffer 18, the interior of the anti-collision buffer 18 is uniformly provided with buffer shock-absorbing layers 10, buffer cotton is filled between the buffer shock-absorbing layers 10 arranged in the anti-collision buffer 18, the end surface of the anti-collision buffer 18 is provided with a sealing rubber cover plate 12 in a sealing way, one surface of the sealing rubber cover plate 12 positioned in the sensor body 1 is provided with an elastic protection block 14, a glass colloid 15 is filled between the sealing rubber cover plate 12 and a temperature compensation circuit board 8 and a signal wire seat 9, the anti-collision buffer 18 and the outer surface of the sensor body 1 are fixedly bonded through a double-faced colloid, the external surface of the anti-collision buffer 18 is provided with a scratch-proof coating 17, the end surface of the sealing rubber cover plate 12 is transversely and symmetrically provided with lead wire grooves 13, one end of a signal lead wire 11 connected on the signal wire seat 9 extends to the, and the surface of the sealing rubber cover plate 12 is provided with an insulating waterproof coating 16, which plays a role in insulating, waterproofing and dustproof.
Specifically, the anti-collision buffer part 18 arranged outside the sensor body 1 by double-sided adhesive tape adhesion can effectively protect the sensor body 1 when in use, further effectively avoids the phenomenon that the sensor body 1 is damaged by external factors, effectively reduces the force of the impact force and absorbs and disperses the force when the sensor body 1 is subjected to external impact force by the combined use between the buffer shock absorption layer 10 inside the anti-collision buffer part 18 and the buffer cotton, ensures that components inside the sensor body 1 are not damaged under the action of the impact force, can prevent the surface of the body from being scratched when the sensor body 1 is disassembled and installed by the arrangement of the anti-scraping coating 17 on the outer surface of the anti-collision buffer part 18, and is provided with the elastic protection block 14 arranged on one side of the inner part of the sensor body 1 by the sealing rubber cover plate 12, and the setting that is equipped with glass colloid 15 is filled between sealed rubber apron 12 and temperature compensation circuit board 8, the signal line seat 9, plays the protection to 1 internals of sensor, prevents to damage, and glass colloid 15's effect is exactly to the fixed protection's of the all-round parcel of spare part on the temperature compensation circuit board 8 effect, and the waterproof dirt-proof effect of parcel that can seal is carried out to sensor body 1 to the setting of insulating waterproof coating 16 on the sealed rubber apron 12 in addition.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications and variations can be made in the embodiments or in part of the technical features of the embodiments without departing from the spirit and the scope of the invention.

Claims (6)

1. A diffused silicon pressure sensor comprising a sensor body (1), characterized in that: the sensor comprises a sensor body (1), wherein a base body (2) is installed at the bottom end of the inner side of the inner cavity of the sensor body (1), a single-stage isolation diaphragm (3) is installed on the base body (2), a silicon oil piece (6) is connected to the upper end of the single-stage isolation diaphragm (3), a pressure chip (4) is arranged inside the end face of the silicon oil piece (6), ceramic adhesives (5) are arranged on the two sides of the silicon oil piece (6) on the surface of the base body (2), a multi-stage silicon wafer (7) is arranged inside the sensor body (1) at the upper end of each ceramic adhesive (5), a temperature compensation circuit board (8) is installed on the end face of each multi-stage silicon wafer (7), a signal wire base (9) is arranged inside the sensor body (1) at the two sides of the end face of the temperature compensation circuit board (8), a signal lead wire (11) is connected to the signal wire base (9), the inside of anticollision bolster (18) is equipped with and evenly is equipped with buffering buffer layer (10), the end face seal of anticollision bolster (18) is equipped with sealing rubber apron (12), lead wire groove (13) have been seted up to the horizontal symmetry of terminal surface of sealing rubber apron (12).
2. A diffused silicon pressure sensor as recited in claim 1, wherein: the multistage silicon chip (7) is connected with the substrate (2) through a ceramic adhesive (5).
3. A diffused silicon pressure sensor as recited in claim 1, wherein: and buffering cotton is filled between buffering shock absorption layers (10) arranged in the anti-collision shock absorption pieces (18).
4. A diffused silicon pressure sensor as recited in claim 1, wherein: one end of a signal lead wire (11) connected to the signal wire seat (9) extends to the outside of the end face of the sealing rubber cover plate (12) through a lead wire groove (13) formed in the sealing rubber cover plate (12), and an insulating waterproof coating (16) is arranged on the surface of the sealing rubber cover plate (12).
5. A diffused silicon pressure sensor as recited in claim 1, wherein: the sensor is characterized in that an elastic protection block (14) is arranged on one side of the sealing rubber cover plate (12) in the sensor body (1), and glass colloid (15) is filled between the sealing rubber cover plate (12) and the temperature compensation circuit board (8) and between the sealing rubber cover plate and the signal wire seat (9).
6. A diffused silicon pressure sensor as recited in claim 1, wherein: the sensor is characterized in that the anti-collision buffer piece (18) and the outer surface of the sensor body (1) are fixedly bonded through double-sided colloid, and the outer surface of the anti-collision buffer piece (18) is provided with a scratch-resistant coating (17).
CN202022655474.3U 2020-11-17 2020-11-17 Diffused silicon pressure sensor Active CN213658145U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202022655474.3U CN213658145U (en) 2020-11-17 2020-11-17 Diffused silicon pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202022655474.3U CN213658145U (en) 2020-11-17 2020-11-17 Diffused silicon pressure sensor

Publications (1)

Publication Number Publication Date
CN213658145U true CN213658145U (en) 2021-07-09

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CN202022655474.3U Active CN213658145U (en) 2020-11-17 2020-11-17 Diffused silicon pressure sensor

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CN (1) CN213658145U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114302593A (en) * 2021-12-29 2022-04-08 广州市久元自动化设备有限公司 Industrial wireless sensor network device based on resource balancing strategy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114302593A (en) * 2021-12-29 2022-04-08 广州市久元自动化设备有限公司 Industrial wireless sensor network device based on resource balancing strategy
CN114302593B (en) * 2021-12-29 2023-10-03 广州市久元自动化设备有限公司 Industrial wireless sensor network device based on resource balancing strategy

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