CN213631033U

CN213631033U - Cavity type photon crystal selective absorption radiator

Info

Publication number: CN213631033U
Application number: CN202022364593.3U
Authority: CN
Inventors: 蔡琦琳; 吴玺; 叶庆
Original assignee: Suzhou University
Current assignee: Suzhou University
Priority date: 2020-10-22
Filing date: 2020-10-22
Publication date: 2021-07-06
Anticipated expiration: 2030-10-22

Abstract

The utility model discloses a cavity formula photonic crystal selective absorption radiator absorbs the cavity structures of radiator for having light inlet, light inlet diameter is less than cavity structures's internal diameter. The utility model discloses a set the absorber to cavity structures, because light inlet is less relatively, the proportion that light in the entering cavity transmitted away from light inlet reduces by a wide margin, has effectively improved the absorption rate that the absorber was set a camera.

Description

Cavity type photon crystal selective absorption radiator

Technical Field

The utility model relates to a thermal radiation technical field, in particular to cavate photonic crystal selective absorption radiator.

Background

With the rapid development of economic society, the energy demand is increasing day by day, and the consumption of fossil energy such as petroleum, natural gas and coal is increasing day by day, so that the energy crisis is met, and the problem of carbon emission is becoming more and more prominent. China highly attaches importance to energy utilization and environment protection work, firmly realizes energy conservation and emission reduction strategic tasks, is definitely proposed in thirteen-five energy conservation and emission reduction comprehensive working schemes issued by the State academy, and develops 'million' actions of key energy consumption units, namely, the national, provincial and city carry out target responsibility evaluation and assessment on 'hundred families', 'thousand families' and 'ten thousand family' key energy consumption units respectively. Therefore, the development of new energy efficient utilization and energy-saving and environment-friendly technology is not slow.

A Solar Thermophotovoltaic (STPV) system is a leading-edge thermoelectric conversion technology and can directly convert high-temperature thermal radiation into electric energy. STPV systems generally consist of a concentrator, an absorber, a radiator and a thermophotovoltaic cell, whose basic principle is: the condenser converges sunlight (light energy) to supply to the absorber, the absorber absorbs the converged sunlight, the temperature rise heating radiator emits infrared heat radiation, and the infrared heat radiation is subjected to photoelectric conversion by the thermophotovoltaic cell to form electric energy. The STPV system has no moving parts, high theoretical conversion efficiency, high efficiency of solar energy utilization and great application potential in the fields of commerce, military, civil use and the like.

Although the highest theoretical conversion efficiency of STPV systems is above 50%, the highest conversion efficiency reported to date is below 10%. Existing STPV systems suffer from the following drawbacks: sunlight undergoes the processes of light condensation, light absorption, heat conduction, radiation and photoelectric conversion in the STPV system, and the absorber has reflection loss in the process of absorbing the sunlight and cannot completely absorb the sunlight.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is to provide a cavity type photonic crystal selective absorption radiator, can effectively reduce the light reflection loss of absorber, promote the light absorption rate of absorber.

In order to solve the technical problem, the utility model discloses a technical scheme as follows:

the utility model provides a cavity type photonic crystal selective absorption radiator absorbs the cavity structures of radiator for having light inlet, light inlet's internal diameter is less than cavity structures's internal diameter.

Preferably, the cavity structure is spherical or elliptical.

Furthermore, the light inlet is provided with a selective transmission film for screening solar light wave bands, and the selective transmission film is formed by alternately laminating silicon layers and silicon dioxide layers.

Further, the thickness of the silicon layer is 100-300nm, the thickness of the silicon dioxide layer is 200-800nm, and the period of the selective transmission film is 3.

Further, the central area of the cavity is provided with a light dispersion device for uniformly dispersing incident light.

Preferably, the light scattering device is ground glass.

Further, the cavity structure is made of a base material, and the base material is a silicon carbide ceramic material.

Further, an inner wall coating formed by a barium sulfate coating is deposited on the inner surface of the cavity structure, and the thickness of the inner wall coating is 100-300 μm.

Furthermore, a photonic crystal layer formed by alternately laminating tungsten layers and hafnium oxide layers is deposited on the outer surface of the cavity structure.

Further, the thickness of the tungsten layer is 10-30nm, the thickness of the hafnium oxide layer is 60-120nm, and the period of the photonic crystal layer is 3.

Compared with the prior art, the utility model provides a technical scheme has following advantage and beneficial effect:

1. the absorption radiator is arranged into a cavity structure, so that the reflection loss of the absorber after sunlight is absorbed is greatly reduced, and the sunlight absorption rate of the absorption radiator is effectively improved;

2. the selective transmission film is arranged at the light inlet of the cavity, so that on one hand, infrared light and visible light can be effectively screened from entering the cavity, and the incident light quality is improved; on the other hand, the infrared radiation in the cavity of the absorption radiator can be effectively blocked, and the heat radiation loss in the cavity is reduced;

3. the light dispersion device is arranged in the center of the cavity structure of the absorption radiator, and the incident light passing through the selective transmission film is uniformly dispersed, so that the incident light uniformly reaches the inner wall of the cavity, and the temperature unevenness in the cavity caused by the overhigh local temperature in the cavity is effectively avoided;

4. the barium sulfate coating is arranged on the inner wall of the cavity and serves as a high-reflection coating, so that the absorption uniformity of incident light in the absorption radiator cavity is further improved;

5. the silicon carbide material is selected as the cavity body base material of the absorption radiator, so that the temperature uniformity of the cavity is further improved;

6. the outer wall of the absorption radiator is provided with the photonic crystal coating formed by tungsten/hafnium oxide, so that the radiation wave band of the absorption radiator is effectively controlled, the conversion rate of converting radiation energy into electric energy is improved, and the efficient utilization of solar energy is realized.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.

FIG. 1 is a schematic diagram of a cavity-type photonic crystal selective absorption radiator in an embodiment.

The attached drawings are marked as follows: 1-a light inlet; 2-a cavity structure; 3-a selective transmission film; 4-an optical dispersion device; 5-inner wall coating; a 6-photonic crystal layer; 7-diffuse sunlight; 10-polymerization of sunlight.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "upper", "lower", "horizontal", "left", "right", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "mounted" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Examples

As shown in fig. 1, the utility model provides a cavity type photonic crystal selective absorption radiator, absorption radiator is for having cavity structures 2 of light inlet 1, and the longest distance between the light inlet opposite side is less than the maximum distance between two arbitrary points of cavity structures's inner wall, promptly the light inlet internal diameter is less than cavity structures's internal diameter. The cavity structure 2 is arranged, and the light inlet 1 is relatively small, so that the proportion of light entering the cavity and reflected out from the light inlet 1 is greatly reduced, and the light absorption rate of the absorber is effectively improved.

The shape of the cavity structure 2 can be various, preferably, wherein in one embodiment, the cavity structure 2 is spherical, and referring to fig. 1, the inner diameter of the spherical cavity structure 2 is 50cm, and the diameter of the light inlet 1 is 10 mm.

In order to further improve the effective wave band (visible light and infrared wave band) of the sunlight entering the absorber, in one embodiment, a selective transmission film 3 for screening the solar wave band is arranged at the light inlet 1, and the selective transmission film 3 is formed by alternately laminating silicon layers and silicon dioxide layers. The selective transmission film 3 allows only light in the visible and infrared wavelength ranges to pass therethrough, while effectively preventing light in the infrared wavelength range from being radiated.

In order to realize the best performance of the selective transmission film 3, it is preferable that in one embodiment, the thickness of the silicon layer is 100-300nm, the thickness of the silicon dioxide layer is 200-800nm, and the period of the selective transmission film 3 is 3. The period of the selective transmission film 3 refers to the number of layers in which silicon layers and silicon dioxide layers are alternately stacked. For example, if the period is 3 in the embodiment, the selective transmission film 3 has the following structure: silicon layer/silicon dioxide layer/silicon layer.

In order to avoid that the incident light entering the spherical cavity structure 2 only irradiates a certain point inside the cavity, and the temperature inside the cavity is not uniform, in one embodiment, the central area of the spherical cavity is provided with a light dispersion device 4 for uniformly dispersing the incident light. Incident light irradiates the light dispersion device 4 to generate diffuse reflection, and the incident light uniformly irradiates the inner wall of the cavity.

Preferably, the light dispersing device 4 is ground glass.

In order to further improve the uniformity of the temperature distribution inside the cavity structure 2, in one embodiment, the cavity structure 2 is made of a silicon carbide ceramic material as a matrix material.

In order to further improve the uniformity of the temperature distribution inside the cavity structure 2, in one embodiment, the inner wall coating 5 formed by barium sulfate coating is deposited on the inner surface of the cavity structure 2, and the thickness of the inner wall coating 5 is 100 μm and 300 μm.

In one embodiment, a photonic crystal layer 6 formed by alternately laminating tungsten layers and hafnium oxide layers is deposited on the outer surface of the cavity structure 2. The main function of the optical crystal layer 6 is to realize high emission before the cut-off wavelength of the GaSb cell (i.e., 1.7 μm), and realize low emission at the invalid waveband of the cell, thereby improving the conversion efficiency of the system and realizing the purpose of efficiently utilizing solar energy.

In one embodiment, the thickness of the tungsten layer is 10-30nm, the thickness of the hafnium oxide layer is 60-120nm, and the period of the photonic crystal layer 6 is 3. The period of the photonic crystal layer 6 refers to the number of layers in which tungsten layers and hafnium oxide layers are alternately stacked. For example, if the period is 3 in the embodiment, the selective transmission film 3 has the following structure: tungsten layer/hafnium oxide layer/tungsten layer.

The irradiation path of sunlight of the cavity type photonic crystal selective absorption radiator provided by the embodiment is as follows:

the polymerized sunlight 10 formed by polymerization of the condenser enters the spherical cavity from the light inlet 1 through the selective transmission film 3, the polymerized sunlight hits ground glass positioned in the central area of the spherical cavity, and the ground glass performs diffuse reflection on the polymerized sunlight to form diffused sunlight 7, so that the polymerized light uniformly irradiates the inner surface of the cavity structure.

The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. The cavity type photonic crystal selective absorption radiator is characterized in that the absorption radiator is a cavity structure with a light inlet, and the inner diameter of the light inlet is smaller than that of the cavity structure.

2. The cavity-type photonic crystal selective absorption radiator according to claim 1, wherein the cavity structure is spherical or elliptical.

3. The cavity type photonic crystal selective absorption radiator according to claim 1 or 2, wherein a selective transmission film for screening solar wave band is arranged at the light inlet, and the selective transmission film is formed by alternately laminating silicon layer and silicon dioxide layer.

4. The cavity-type photonic crystal selective absorption radiator as claimed in claim 3, wherein the thickness of the silicon layer is 100-300nm, the thickness of the silicon dioxide layer is 200-800nm, and the period of the selective transmission film is 3.

5. The cavity-type photonic crystal selective absorption radiator according to claim 1, wherein the central region of the cavity is provided with a light dispersion means for uniformly dispersing incident light.

6. The cavity-type photonic crystal selective absorption radiator according to claim 5, wherein the light scattering device is ground glass.

7. The cavity-type photonic crystal selective absorption radiator according to claim 1, wherein the cavity structure is made of a matrix material, the matrix material being a silicon carbide ceramic material.

8. The cavity-type photonic crystal selective absorption radiator as claimed in claim 1, wherein the inner wall coating formed by barium sulfate coating is deposited on the inner surface of the cavity structure, and the thickness of the inner wall coating is 100-300 μm.

9. The cavity-type photonic crystal selective absorption radiator according to claim 1, wherein a photonic crystal layer formed by alternately stacking tungsten layers and hafnium oxide layers is deposited on the outer surface of the cavity structure.

10. The cavity-type photonic crystal selective absorption radiator of claim 9, wherein the tungsten layer has a thickness of 10-30nm, the hafnium oxide layer has a thickness of 60-120nm, and the period of the photonic crystal layer is 3.