CN213520697U - High-power semiconductor laser - Google Patents

Abstract

The utility model belongs to the laser instrument field, in particular to high power semiconductor laser, including single chip module, single chip module is connected to the semiconductor laser pipe through drive module, single chip module still controls power module and charges for energy storage capacitor, energy storage capacitor provides required operating voltage for the semiconductor laser pipe, energy storage capacitor is connected to AD conversion module through voltage sampling module, the semiconductor laser pipe is connected to AD conversion module through current sampling module, AD conversion module turns into digital signal transmission to single chip module with the voltage information and the current information who gathers, drive module includes the push-pull amplifier circuit that a PNP triode and an NPN triode constitute. The novel high-power semiconductor laser tube capable of meeting high current and voltage and the working requirement of a low-power laser tube array can continuously adjust the working current of the high-power semiconductor laser tube and the low-power laser tube array, and is quick in response time, high in stability and simple in structure and easy to implement.

Description

High-power semiconductor laser

Technical Field

The utility model belongs to the laser drive field, in particular to high power semiconductor laser.

Background

The semiconductor laser has the advantages of small volume, good monochromaticity, strong directivity, high light power utilization rate and the like, and is widely applied to the fields of optical fiber communication, instrument measurement and the like due to low working voltage requirement and simple working circuit. With the development of the photoelectric technology, a high-power semiconductor laser tube is developed, the application range of the high-power semiconductor laser tube is wider, but higher working voltage and current are needed, and meanwhile, a low-power laser tube array also needs higher working power.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a: aiming at the existing problems, the high-power semiconductor laser device which has the advantages of simple structure, high response speed and capability of meeting the high-voltage and high-current working environment is provided.

The utility model adopts the technical scheme as follows:

a high-power semiconductor laser comprises a single chip microcomputer module, wherein the single chip microcomputer module is connected to a semiconductor laser tube through a driving module, the single chip microcomputer module also controls a power supply module to charge an energy storage capacitor, the energy storage capacitor provides required working voltage for the semiconductor laser tube, the energy storage capacitor is connected to an AD conversion module through a voltage sampling module, the semiconductor laser tube is connected to the AD conversion module through a current sampling module, and the AD conversion module converts acquired voltage information and current information into digital signals to be transmitted to the single chip microcomputer module; the driving module comprises a push-pull amplifying circuit formed by a PNP triode and an NPN triode. The singlechip module outputs two paths of charging signals to control the power supply module to charge the energy storage capacitor, the semiconductor laser tube is provided with working voltage through the energy storage capacitor, and the semiconductor laser tube can work under high voltage by voltage buffering through the energy storage capacitor; the singlechip module also can convert low current provided by the singlechip module into high current to meet the working requirement of a semiconductor laser tube by outputting a driving signal through a push-pull amplifier in the driving module, and the low current is used for acquiring voltage of an energy storage capacitor and current of a parallel resistor on the semiconductor laser tube, converting an acquired analog signal into a digital signal through an AD conversion module and processing the digital signal through an internal program of the singlechip module, thereby effectively monitoring the working state of the semiconductor laser. The single chip microcomputer module can intelligently adjust the output signal of the single chip microcomputer module through an internal program to further control the power of the semiconductor laser tube, and can also communicate with external equipment through other communication modes, namely the working state of the semiconductor laser is fed back and the working current and the voltage of the semiconductor laser are adjusted.

Further, the driving module specifically includes: the integrated operational amplifier U1 is provided, and the negative input end of the integrated operational amplifier U1 is connected with the control end of the variable potentiometer R5; the positive pole of the variable potentiometer R5 receives a driving signal of the singlechip module, and the negative pole of the variable potentiometer R5 is connected with the output end of the integrated operational amplifier U1 through a capacitor C4; the positive input end of the integrated operational amplifier U1 is grounded, and the output end of the integrated operational amplifier U1 is connected with the base electrode of a PNP triode Q3 through a resistor R3; the collector of the triode Q3 is grounded, the emitter of the triode Q3 is connected with the emitter of an NPN triode Q1, the base of the triode Q1 is connected with the base of the triode Q1, and the emitter of the triode Q is also connected to the grid of an N-type MOS tube Q2 through a resistor R1; the gate of the MOS transistor Q2 is connected to the source thereof through a capacitor C2 and a resistor R2 in sequence, the source thereof is grounded through a resistor R4, the drain thereof is connected to the cathode of the semiconductor laser diode to supply operating current thereto, and a capacitor C3 is connected in parallel to the resistor R2. The integrated operational amplifier U1 is a fast amplifier for amplifying the pulse driving signal of the singlechip module, detects the pulse edge by the push-pull amplification of the triode Q3 and the triode Q1, provides a larger driving current for the MOS tube Q2, and provides a stable large current for the semiconductor laser tube by the feedback amplification compensation formed by the peripheral elements of the MOS tube Q2. Adjusting the variable potentiometer R5 allows the output current value to be continuously adjusted.

Further, the power module comprises a transformer T1 and a rectifier bridge D1 which are connected in sequence, and the input end of the transformer 1 is used for accessing mains supply; the positive output end of the current bridge D1 is connected with the drain electrode of an N-type MOS tube Q4, and the negative output end of the current bridge D1 is connected with the source electrode of an N-type MOS tube Q5; the drain electrode of the MOS transistor Q4 is connected with the source electrode of the MOS transistor Q5 through a capacitor C6 and a capacitor C9 in sequence; the source electrode of the MOS transistor Q4 is connected with the drain electrode of the MOS transistor Q5, and the source electrode of the MOS transistor Q4 is connected with the negative input end of the transformer T1 through an inductor L1; the source of the MOS transistor Q5 is grounded, and the gate of the MOS transistor Q5 is connected with the source of the MOS transistor Q through a resistor R9; the gate of the MOS transistor Q4 is connected with the source thereof through a resistor R7; the node between the capacitor C5 and the capacitor C9 is connected with the positive input end of the transformer T2 through a capacitor C10; the capacitor C6 is connected with a resistor R6 in parallel, and the capacitor C9 is connected with a resistor R8 in parallel; the gates of the MOS tube Q4 and the MOS tube Q5 respectively receive the charging signal output by the singlechip module; the output end of the transformer T2 is connected with an energy storage capacitor through a rectifier bridge D2 to charge the energy storage capacitor. Two paths of signals of the single chip microcomputer module respectively enable MOS (metal oxide semiconductor) tubes Q4 and Q5 to be conducted, alternating current mains supply is subjected to voltage transformation and rectification and then charges a capacitor C6 and a capacitor C9 in turn, and then a series resonance circuit formed by an inductor L1, a capacitor C10 and a transformer T2 is used for performing constant current charging on an energy storage capacitor. The resistor R6 and the resistor R8 ensure voltage sharing of the capacitor C5 and the capacitor C9, and the semiconductor laser is protected by capacitor discharge when the semiconductor laser stops working.

Further, a capacitor C7 is connected between the input ends of the transformer T1, the positive output end of the transformer is grounded through a capacitor C5, and the negative output end of the transformer is grounded through a capacitor C8; and a capacitor C11 is connected between the output ends of the transformer T2 and is used for filtering voltage spike noise.

Further, the MOS transistor Q2 adopts IXFN80N 50.

To sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:

the laser tube array can meet the working requirements of high-current and high-voltage high-power semiconductor laser tubes and low-power laser tube arrays, can continuously adjust the working current of the laser tube array, and has the advantages of quick response time, high stability, simple structure and easy implementation.

Drawings

FIG. 1 is a schematic diagram of the present invention;

fig. 2 is a schematic circuit diagram of the driving module of the present invention;

fig. 3 is a schematic diagram of a half power module circuit according to the present invention.

Detailed Description

All features disclosed in this specification may be combined in any combination, except features and/or steps that are mutually exclusive.

As shown in fig. 1, a high power semiconductor laser, including single chip module, single chip module is connected to the semiconductor laser pipe through drive module, single chip module still controls power module and charges for energy storage capacitor, energy storage capacitor provides required operating voltage for the semiconductor laser pipe, energy storage capacitor is connected to AD conversion module through voltage sampling module, the semiconductor laser pipe is connected to AD conversion module through current sampling module, AD conversion module turns into digital signal transmission to single chip module with the voltage information and the current information of gathering.

As shown in fig. 2, the variable driving module specifically includes: the integrated operational amplifier U1 is provided, and the negative input end of the integrated operational amplifier U1 is connected with the control end of the variable potentiometer R5; the positive pole of the variable potentiometer R5 receives a driving signal of the singlechip module, and the negative pole of the variable potentiometer R5 is connected with the output end of the integrated operational amplifier U1 through a capacitor C4; the positive input end of the integrated operational amplifier U1 is grounded, and the output end of the integrated operational amplifier U1 is connected with the base electrode of a PNP triode Q3 through a resistor R3; the collector of the triode Q3 is grounded, the emitter of the triode Q3 is connected with the emitter of an NPN triode Q1, the base of the triode Q1 is connected with the base of the triode Q1, and the emitter of the triode Q is also connected to the grid of an N-type MOS tube Q2 through a resistor R1; the gate of the MOS transistor Q2 is connected to the source thereof through a capacitor C2 and a resistor R2 in sequence, the source thereof is grounded through a resistor R4, the drain thereof is connected to the cathode of the semiconductor laser diode to supply operating current thereto, and a capacitor C3 is connected in parallel to the resistor R2. The MOS transistor Q2 adopts IXFN80N 50.

As shown in fig. 3, further, the power supply module includes a transformer T1 and a rectifier bridge D1 connected in sequence, and an input end of the transformer 1 is used for accessing a mains supply; the positive output end of the current bridge D1 is connected with the drain electrode of an N-type MOS tube Q4, and the negative output end of the current bridge D1 is connected with the source electrode of an N-type MOS tube Q5; the drain electrode of the MOS transistor Q4 is connected with the source electrode of the MOS transistor Q5 through a capacitor C6 and a capacitor C9 in sequence; the source electrode of the MOS transistor Q4 is connected with the drain electrode of the MOS transistor Q5, and the source electrode of the MOS transistor Q4 is connected with the negative input end of the transformer T1 through an inductor L1; the source of the MOS transistor Q5 is grounded, and the gate of the MOS transistor Q5 is connected with the source of the MOS transistor Q through a resistor R9; the gate of the MOS transistor Q4 is connected with the source thereof through a resistor R7; the node between the capacitor C5 and the capacitor C9 is connected with the positive input end of the transformer T2 through a capacitor C10; the capacitor C6 is connected with a resistor R6 in parallel, and the capacitor C9 is connected with a resistor R8 in parallel; the gates of the MOS tube Q4 and the MOS tube Q5 respectively receive the charging signal output by the singlechip module; the output end of the transformer T2 is connected with an energy storage capacitor through a rectifier bridge D2 to charge the energy storage capacitor. A capacitor C7 is connected between the input ends of the transformer T1, the positive output end of the transformer is grounded through a capacitor C5, and the negative output end of the transformer is grounded through a capacitor C8; a capacitor C11 is connected between the output terminals of the transformer T2.

Claims (5)

1. A high-power semiconductor laser is characterized by comprising a single chip microcomputer module, wherein the single chip microcomputer module is connected to a semiconductor laser tube through a driving module, the single chip microcomputer module also controls a power supply module to charge an energy storage capacitor, the energy storage capacitor provides required working voltage for the semiconductor laser tube, the energy storage capacitor is connected to an AD conversion module through a voltage sampling module, the semiconductor laser tube is connected to the AD conversion module through a current sampling module, and the AD conversion module converts acquired voltage information and current information into digital signals to be transmitted to the single chip microcomputer module; the driving module comprises a push-pull amplifying circuit formed by a PNP triode and an NPN triode.

2. The high-power semiconductor laser as claimed in claim 1, wherein the driving module is specifically: the integrated operational amplifier U1 is provided, and the negative input end of the integrated operational amplifier U1 is connected with the control end of the variable potentiometer R5; the positive pole of the variable potentiometer R5 receives a driving signal of the singlechip module, and the negative pole of the variable potentiometer R5 is connected with the output end of the integrated operational amplifier U1 through a capacitor C4; the positive input end of the integrated operational amplifier U1 is grounded, and the output end of the integrated operational amplifier U1 is connected with the base electrode of a PNP triode Q3 through a resistor R3; the collector of the triode Q3 is grounded, the emitter of the triode Q3 is connected with the emitter of an NPN triode Q1, the base of the triode Q1 is connected with the base of the triode Q1, and the emitter of the triode Q is also connected to the grid of an N-type MOS tube Q2 through a resistor R1; the gate of the MOS transistor Q2 is connected to the source thereof through a capacitor C2 and a resistor R2 in sequence, the source thereof is grounded through a resistor R4, the drain thereof is connected to the cathode of the semiconductor laser diode to supply operating current thereto, and a capacitor C3 is connected in parallel to the resistor R2.

3. The high-power semiconductor laser as claimed in claim 1, wherein the power module comprises a transformer T1 and a rectifier bridge D1 connected in sequence, and an input end of the transformer 1 is used for connecting to a mains supply; the positive output end of the current bridge D1 is connected with the drain electrode of an N-type MOS tube Q4, and the negative output end of the current bridge D1 is connected with the source electrode of an N-type MOS tube Q5; the drain electrode of the MOS transistor Q4 is connected with the source electrode of the MOS transistor Q5 through a capacitor C6 and a capacitor C9 in sequence; the source electrode of the MOS transistor Q4 is connected with the drain electrode of the MOS transistor Q5, and the source electrode of the MOS transistor Q4 is connected with the negative input end of the transformer T1 through an inductor L1; the source of the MOS transistor Q5 is grounded, and the gate of the MOS transistor Q5 is connected with the source of the MOS transistor Q through a resistor R9; the gate of the MOS transistor Q4 is connected with the source thereof through a resistor R7; the node between the capacitor C5 and the capacitor C9 is connected with the positive input end of the transformer T2 through a capacitor C10; the capacitor C6 is connected with a resistor R6 in parallel, and the capacitor C9 is connected with a resistor R8 in parallel; the gates of the MOS tube Q4 and the MOS tube Q5 respectively receive the charging signal output by the singlechip module; the output end of the transformer T2 is connected with an energy storage capacitor through a rectifier bridge D2 to charge the energy storage capacitor.

4. The high-power semiconductor laser as claimed in claim 3, wherein a capacitor C7 is connected between the input terminals of the transformer T1, the positive output terminal is grounded through a capacitor C5, and the negative output terminal is grounded through a capacitor C8; and a capacitor C11 is connected between the output ends of the transformer T2.

5. A high power semiconductor laser as claimed in claim 2 wherein said MOS transistor Q2 is IXFN80N 50.

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