CN213517578U - Array type double-flash detector - Google Patents
Array type double-flash detector Download PDFInfo
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- CN213517578U CN213517578U CN202021688475.1U CN202021688475U CN213517578U CN 213517578 U CN213517578 U CN 213517578U CN 202021688475 U CN202021688475 U CN 202021688475U CN 213517578 U CN213517578 U CN 213517578U
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Abstract
The application relates to an array type double-flash detector, which comprises a light guide device, a reflecting layer, a double-flash crystal, a silicon photoelectric semiconductor and a signal conversion circuit; the light guide device is a solid light guide and is made of a light-transmitting material as a whole; the light guide device is adhered with a reflecting layer except the bottom; the double scintillation crystals completely cover the bottom of the light guide device, and the entrance window covers the double scintillation crystals; the silicon photoelectric semiconductors are arranged at intervals to form a silicon photoelectric semiconductor array and arranged outside the light guide device, and the silicon photoelectric semiconductors are connected with the signal conversion circuit; the signal conversion circuit converts an optical signal output by the silicon photoelectric semiconductor into an electrical signal and discriminates alpha and/or beta signals. Use silicon photoelectric semiconductor array, it is littleer to compare photomultiplier volume, compact structure, and operating voltage is less than 100V, and is difficult for receiving electromagnetic interference, has exposure protection, the effectual life who prolongs this detector, and the material of photoconducting is organic glass, and the resistance to vibration reinforcing.
Description
Technical Field
The application relates to the technical field of radiation detection, in particular to an array type double-flash detector.
Background
The existing double-flash detector uses a hollow reflection cavity as a light guide, and a photomultiplier as a photoelectric conversion device, so that the device is large in size and poor in vibration resistance, the structure and the characteristics of the photomultiplier determine that the photomultiplier needs complete light-shielding protection, electromagnetic shielding and high working pressure, and if the photomultiplier is exposed under a working state, the photomultiplier is very easy to damage and is fragile.
Disclosure of Invention
In view of this, the present application provides an array-type dual-flash detector, which includes a light guide device, a reflective layer, an incident window, a dual-flash crystal, a silicon photoelectric semiconductor, and a signal conversion circuit; the light guide device is a solid light guide and is made of a light-transmitting material as a whole; the light guide device is attached with the light reflecting layer except the bottom; the double scintillation crystals are arranged at the bottom of the light guide device, and the entrance window completely covers the double scintillation crystals; the number of the silicon photoelectric semiconductors is multiple, the silicon photoelectric semiconductors are arranged on the top of the light guide device, the silicon photoelectric semiconductors are arranged at intervals and jointly form a silicon photoelectric semiconductor array, and the silicon photoelectric semiconductors are connected with the signal conversion circuit; the signal conversion circuit converts the optical signal output by the silicon photoelectric semiconductor into an electrical signal and discriminates alpha and/or beta signals.
In one possible implementation, the distance between adjacent silicon optoelectronic semiconductors is less than 30 millimeters.
In one possible implementation, the light transmittance of the light guide device is greater than 97%.
In one possible implementation, the light-reflecting layer has a light-reflecting rate higher than 95%.
In one possible implementation, the light guide is a cube structure, and the length of the light guide is less than 18 cm, and the width of the light guide is less than 12 cm.
In a possible implementation manner, a vacancy is reserved on the light reflecting layer on the top of the light guide device, and the vacancy corresponds to the position of the silicon photoelectric semiconductor array one by one.
In one possible implementation manner, the dual scintillation crystal is a zinc sulfide (silver) plated plastic scintillation crystal, and the flashing surface of the zinc sulfide (silver) plated plastic scintillation crystal is attached to the bottom of the light guide device.
In one possible implementation, the silicon optoelectronic semiconductor is bonded to the top of the light guide by glue.
In one possible implementation, the entrance window is an aluminum-plated film.
In one possible implementation, the dual scintillation crystal completely covers the bottom of the light guide.
The utility model has the advantages that: use a plurality of silicon photoelectric semiconductors to constitute silicon photoelectric semiconductor array and replace photomultiplier as photoelectric conversion equipment, and the interval is in predetermineeing the within range between the adjacent silicon photoelectric semiconductor, it is littleer to compare photomultiplier volume, compact structure, operating voltage is less than 100V, and be difficult for receiving electromagnetic interference, exposure protection has, accidental exposure can not cause the harm to the array double-flash detector of this application embodiment, the effectual life who prolongs this detector, the material of light guide is organic glass, the vibration resistance reinforcing.
Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments, features, and aspects of the application and, together with the description, serve to explain the principles of the application.
Fig. 1 shows a schematic perspective structure of an array-type double-flash detector according to an embodiment of the present application;
fig. 2 shows a side view of an array type dual flash detector according to an embodiment of the present application.
Detailed Description
Various exemplary embodiments, features and aspects of the present application will be described in detail below with reference to the accompanying drawings. In the drawings, like reference numbers can indicate functionally identical or similar elements. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
It should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the invention or for simplicity in description, and do not indicate or imply that the device or element so indicated must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
Furthermore, in the following detailed description, numerous specific details are set forth in order to provide a better understanding of the present application. It will be understood by those skilled in the art that the present application may be practiced without some of these specific details. In some instances, methods, means, elements and circuits that are well known to those skilled in the art have not been described in detail so as not to obscure the present application.
Fig. 1 shows a schematic perspective view of an array-type dual-flash detector according to an embodiment of the present application. As shown in fig. 1 and fig. 2, the array-type dual-flash detector includes: a light guide device 2, a reflecting layer, a double scintillation crystal 3 and a silicon photoelectric semiconductor 4. The light guide device 2 is a solid light guide, and is made of a light-transmitting material as a whole, so that light can be transmitted inside without obstacles. The double scintillation crystal 3 completely covers the bottom of the light guide device 2, an entrance window 1 is also arranged below the double scintillation crystal 3, and a reflecting layer is attached to the side wall of the light guide device 2 except the bottom surface; the double scintillation crystal 3 is a thin sheet and can be fixed to the bottom of the light guide device 2 in an adhesion mode, the incident window 1 completely covers the double scintillation crystal 3, alpha rays and beta rays penetrate through the incident window 1 and then interact with the double scintillation crystal 3, the double scintillation crystal 3 emits light rays, and the light rays are collected and processed by the silicon photoelectric semiconductor 4 after passing through the light guide device 2. The number of the silicon photoelectric semiconductors 4 is multiple, the silicon photoelectric semiconductors 4 are all arranged on the top of the light guide device 2, the silicon photoelectric semiconductors 4 are arranged at intervals and jointly form a silicon photoelectric semiconductor 4 array, the silicon photoelectric semiconductors 4 are electrically connected with the signal conversion circuit, collected optical signals are converted into electrical signals, and alpha and/or beta signals are screened.
The working process of the array type double-flash detector in the embodiment of the application is as follows: alpha and beta rays enter or pass through the double scintillation crystal 3, energy is deposited in the double scintillation crystal 3 to enable the crystal to emit light, the light emitted by the double scintillation crystal 3 is transmitted to the silicon photoelectric semiconductor 4 through the light guide device 2, and the silicon photoelectric semiconductor 4 converts the collected optical signals into electric signals to be processed by a subsequent signal conversion circuit. In the circuit, the alpha and beta signals can be distinguished by discriminating the width of the electrical pulse or by discriminating its amplitude. It should be noted that, in the present application, no improvement is made to the signal conversion circuit, and those skilled in the art can complete the signal conversion circuit by using the prior art, so that the detailed description is omitted herein.
In this embodiment, the silicon photoelectric semiconductor 4 is used as the photoelectric conversion device, and a plurality of silicon photoelectric semiconductors 4 together constitute a silicon photoelectric semiconductor array. The silicon photoelectric semiconductor 4 has low working voltage, smaller volume compared with a photomultiplier, less electromagnetic interference compared with the photomultiplier, exposure protection, accidental exposure and no damage to the array type double-flash detector, and the service life of the detector is effectively prolonged.
As shown in fig. 1, in one specific embodiment, the spacing between the adjacent silicon optoelectronic semiconductors 4 can be freely set within a preset range, and the center-to-center distance between the adjacent silicon optoelectronic semiconductors 4 is less than 30 mm, and the spacing distance between the silicon optoelectronic semiconductors 4 can be specifically set according to actual requirements.
In this embodiment, the silicon photoelectric semiconductors 4 are distributed at a larger distance, and the adjacent silicon photoelectric semiconductors 4 are not at equal intervals, and the center-to-center distances are all less than 30 mm, and preferably, the centers of two adjacent silicon photoelectric semiconductors 4 are not at equal intervals of 6.5 mm to 12 mm according to the positions of the silicon photoelectric semiconductors 4.
Further, the silicon optoelectronic semiconductor 4 that is close to 2 top edges of light guide device and corner position department at the interval is closer to 12 millimeters, and on the contrary, the silicon optoelectronic semiconductor 4 that is closer to 2 top central point department of light guide device's the interval is closer to 6.5 millimeters, and the design of arranging of this kind of interval mode is more reasonable, under the prerequisite of guaranteeing not having the reason increase cost, makes the array double-flash detector of this application more sensitive in the detection range, and detection efficiency distributes comparatively evenly.
In one specific embodiment, as shown in fig. 1, the material of the light guide device 2 is organic glass, and the light transmittance of the organic glass is greater than 97%,
in this embodiment, make concrete the injecing to the material of light guide device 2, choose the organic glass that the surface is smooth for use as the light guide, reduce the volume of the two sudden strain of a muscle detectors of array of this application embodiment and be close half, make its inner space compacter, portable effectively improves the two shock resistance of sudden strain of a muscle detectors of this array moreover, has strengthened holistic structural strength.
In one particular embodiment, the light-reflective layer 5 has a light reflectivity of greater than 95%.
In this embodiment, the reflective layer 5 may be an adhesive-backed reflective paper, and in order to ensure the light collection efficiency and the production efficiency, it is only necessary to ensure that the reflective layer has a sufficiently high reflective rate, and preferably, the adhesive-backed reflective paper having a reflective rate higher than 95% is selected.
As shown in fig. 1 and 2, in one specific embodiment, the light guide device 2 is a square body with a hollow interior, and the top wall and the bottom wall of the light guide device 2 are both less than 18 cm in length and less than 12 cm in width.
In this embodiment, the size of the light guide device 2 is specifically limited, that is, the length of the top and the bottom of the light guide device 2 is less than 18 cm, and the width of the light guide device is less than 12 cm, so that the overall structure of the array type double-flash detector is reasonable, and a person skilled in the art can set the size according to a specific use condition and more suitable for practical use.
In one embodiment, the entrance window 1 is an aluminized film having a thickness of less than 10 microns.
In one embodiment, shown in figure 1, voids are reserved in the light-reflecting layer 5 on top of the light guide 2, the voids corresponding one-to-one to the positions of the array of silicon photo-semiconductors 4.
It should be particularly pointed out that, before the reflective layer 5 is attached to the top of the light guide device 2, a vacancy needs to be left on the reflective layer 5, the vacancy matches with the designed silicon optoelectronic semiconductor 4 array, after the reflective paper is attached, the silicon optoelectronic semiconductor 4 array is fixed in the vacancy, and the arrangement of the vacancy makes the array type double-flash detector of the present application more reasonable in design, and easy for the implementers in the field to complete assembly.
In one specific embodiment, the double scintillation crystal 3 is a thin plastic scintillation crystal plated with zinc sulfide (silver) on one surface, and the flash surface of the thin plastic scintillation crystal plated with zinc sulfide (silver) on one surface is attached to the bottom of the light guide device 2.
In this embodiment, the double scintillation crystal 3 may be a sheet plastic scintillation crystal with a single-side plated with zinc sulfide (silver), and the installation is completed by applying optical silicone grease to the bottom wall of the light guide device 2 and then attaching the optical silicone grease to the flash surface of the double scintillation crystal 3.
In one particular embodiment, shown in figure 2, the silicon photo-semiconductor 4 is bonded to the top of the light guide 2 by optical glue.
In this embodiment, since the silicon optoelectronic semiconductor 4 is bonded to the top of the optical waveguide device 2 by the optical adhesive, and the top of the optical waveguide device is further bonded with the adhesive-backed reflective paper, a vacancy of the silicon optoelectronic semiconductor 4 needs to be reserved on the adhesive-backed reflective paper, and the vacancy is provided to facilitate the position location of each silicon optoelectronic semiconductor 4, thereby providing convenience for the implementer in the field and reducing the assembly error.
In one particular embodiment, the operating voltage of the silicon photo-semiconductor 4 is less than 100V.
In one embodiment, the sum of the areas of the plurality of silicon photovoltaic semiconductors 4 is in a predetermined ratio to the area of the top of the light guide 2.
In this embodiment, the predetermined ratio is used to ensure that there are a corresponding number of silicon photo-semiconductors 4 in a certain area of the top of the light guide 2, and the predetermined ratio of the silicon photo-semiconductors 4 arranged in an array occupies the total area of the top is typically 1 to 5.
Having described embodiments of the present application, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (10)
1. An array type double-flash detector is characterized by comprising a light guide device, a light reflecting layer, an incidence window, a double-flash crystal, a silicon photoelectric semiconductor and a signal conversion circuit;
the light guide device is a solid light guide and is made of a light-transmitting material as a whole;
the light guide device is attached with the light reflecting layer except the bottom;
the double scintillation crystal is arranged at the bottom of the light guide device,
the entrance window completely covers the double scintillation crystals;
the number of the silicon photoelectric semiconductors is multiple, the silicon photoelectric semiconductors are arranged on the top of the light guide device, the silicon photoelectric semiconductors are arranged at intervals and jointly form a silicon photoelectric semiconductor array, and the silicon photoelectric semiconductors are connected with the signal conversion circuit;
the signal conversion circuit converts the optical signal output by the silicon photoelectric semiconductor into an electrical signal and discriminates alpha and/or beta signals.
2. The array-type double-flash detector as claimed in claim 1, wherein the distance between adjacent silicon optoelectronic semiconductors is less than 30 mm.
3. The array type double-flash detector as claimed in claim 2, wherein the light transmittance of the light guide device is greater than 97%.
4. The array type double-flash detector of claim 1, wherein the light reflection layer has a light reflection rate higher than 95%.
5. The array type double-flash detector as claimed in claim 2, wherein the light guide device is a cubic structure, and the length of the light guide device is less than 18 cm and the width of the light guide device is less than 12 cm.
6. The array-type double-flash detector as claimed in claim 1, wherein a vacancy is reserved on the light reflecting layer on the top of the light guide device, and the vacancy corresponds to the position of the silicon photoelectric semiconductor array in a one-to-one manner.
7. The array type double-flash detector as claimed in claim 2, wherein the double-flash crystal is silver-activated zinc sulfide plastic flash crystal, and the flash surface of the double-flash crystal is attached to the bottom of the light guide device.
8. The array twin flash detector of claim 1, wherein the silicon photo-semiconductor is bonded to the top of the light guide device by glue.
9. The array type double-flash detector of claim 1, wherein the entrance window is an aluminum-plated film, and the thickness of the entrance window is less than 10 microns.
10. The array dual flash detector of claim 1, wherein the dual scintillation crystal completely covers the bottom of the light guide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021688475.1U CN213517578U (en) | 2020-08-13 | 2020-08-13 | Array type double-flash detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021688475.1U CN213517578U (en) | 2020-08-13 | 2020-08-13 | Array type double-flash detector |
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| Publication Number | Publication Date |
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| CN213517578U true CN213517578U (en) | 2021-06-22 |
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| CN202021688475.1U Active CN213517578U (en) | 2020-08-13 | 2020-08-13 | Array type double-flash detector |
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