CN213461723U - Miniaturized S-band transmitting assembly - Google Patents
Miniaturized S-band transmitting assembly Download PDFInfo
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- CN213461723U CN213461723U CN202022952858.1U CN202022952858U CN213461723U CN 213461723 U CN213461723 U CN 213461723U CN 202022952858 U CN202022952858 U CN 202022952858U CN 213461723 U CN213461723 U CN 213461723U
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- 230000005284 excitation Effects 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 abstract description 15
- 239000003990 capacitor Substances 0.000 description 33
- 238000004146 energy storage Methods 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The utility model discloses an including PIN switch, first order amplifier, second level amplifier, third amplifier, 1: 5 series feed distributor, 5: 1, a series-fed synthesizer, a first bridge, a second bridge and a BITE circuit in the component; PIN switch input links to each other with input excitation power, and PIN switch output links to each other with first-stage amplifier input, and first-stage amplifier output links to each other with second amplifier input, and second amplifier output is connected with the isolator, the isolator output and 1: 5 the distributor input is presented to the cluster and links to each other, the utility model discloses PIN switch design has a TTL control port, and when the TTL was the high level, the PIN switch switched on, and when the TTL was the low level, the PIN switch was ended, switched on and can realize the control to transmission subassembly operating condition with the control that ends to the PIN switch through the TTL signal.
Description
Technical Field
The utility model belongs to a radar transmitting system in air traffic control radar field, in particular to miniaturized S wave band transmission subassembly.
Background
Along with the development of air transportation, the air transportation volume increases rapidly, and in order to ensure the safety of air transportation, the demand of primary radar is more and more big, and primary radar is basically installed at each large airport. In order to be suitable for various complex environments, most of power amplifiers in the transmitting assembly of the existing primary radar transmitter are silicon triodes, and the transmitting assembly is large in size and cannot meet the requirement of radar miniaturization development due to small power and low gain of a single tube. With the advent of the LD MOS power transistor with large single-transistor power and high gain, the transmission module can be designed to have a smaller structural size with the same output power.
SUMMERY OF THE UTILITY MODEL
In order to realize the above-mentioned requirement to the transmission subassembly, the utility model provides a miniaturized S wave band transmission subassembly.
The purpose of the utility model can be realized by the following technical scheme: a miniaturized S-band transmitting assembly comprises a PIN switch, a first-stage amplifier, a second-stage amplifier, a third-stage amplifier and a 1: 5 series feed distributor, 5: 1, a series-fed synthesizer, a first bridge, a second bridge and a BITE circuit in the component; PIN switch input links to each other with input excitation power, and PIN switch output links to each other with first-stage amplifier input, and first-stage amplifier output links to each other with second amplifier input, and second amplifier output is connected with the isolator, the isolator output and 1: 5 the input ends of the series-fed distributors are connected, 1: 5 the second amplifier output power is divided into 5 paths of output by the series feed divider, 1: 5 five groups of output ends of the series-fed distributor are respectively connected with a third-stage amplifier through a group of first electric bridges, five output ends of the third-stage amplifier are respectively connected with a group of second electric bridges, and five output ends of the second electric bridges are respectively connected with 5: 1, connecting input ends of series-fed synthesizers, 5: 1, the output end of the series-fed synthesizer outputs a total power signal, and a BITE circuit and PIN switch in the component and 5: 1 series-fed synthesizer.
The utility model discloses a further technological improvement lies in: the first stage amplifier comprises a group of 30W amplifiers, and the power tube model used is BLS6G 2735L-30.
The utility model discloses a further technological improvement lies in: the second stage amplifier comprises a 350W amplifier, and the used power tube is BLS7G 2729L-350P.
The utility model discloses a further technological improvement lies in: the third-stage amplifier comprises ten 350W amplifiers, each two 350W amplifiers form a group, the ten 350W amplifiers are arranged in parallel, and the type of the used power tube is BLS7G 2729L-350P.
The utility model discloses a further technological improvement lies in: the ten 350W amplifier output ends of the third-stage amplifier are all connected with isolators used for protecting power tubes and absorbing reflected power in the circuit.
The utility model discloses a further technological improvement lies in: the first-stage amplifier and the second-stage amplifier are arranged on the first group of power supply boards, and the ten 350W amplifiers of the third-stage amplifier are arranged on the remaining five groups of power supply boards in a group of every two 350W amplifiers.
The utility model discloses a further technological improvement lies in: and the power supply board is provided with a voltage detection port, and the voltage detection port is connected with a corresponding amplifier arranged on the corresponding power supply board.
The utility model discloses a further technological improvement lies in: the PIN switch is provided with a group of TTL control ports, the TTL control ports are connected with a BITE circuit in the component, and the PIN switch is in a conducting state when the TTL is at a high level; when TTL is low, PIN switch is in cut-off state.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model discloses PIN switch design has a TTL control port, and when TTL was the high level, the PIN switch switched on, and when TTL was the low level, the PIN switch ended, switched on and can realize the control to launching component operating condition with the control that ends to the PIN switch through the TTL signal.
2. The 30W amplifier of the first-stage amplifier is a high-gain amplifier, the input power is only 1.5W, the input power is one tenth of the input power of the original transmitting component, and the requirement on the input power is low.
3. The third-stage amplifier is provided with ten 350W amplifiers, and is tiled on the shell of the transmitting assembly in a side-by-side staggered manner, so that the size of the transmitting assembly is reduced to the maximum extent; the ten 350W amplifiers work in parallel, when one or more 350W amplifiers are damaged, the output power of the transmitting assembly is reduced, but the transmitting assembly can still work normally, and the reliability of the transmitting assembly is improved.
4. The BITE circuit in the module is a control circuit of the emission module and can be controlled by a main monitor to realize the on-off control of the emission module; the input and output power signals, the over-voltage and under-voltage signals and the temperature signals of the transmitting assembly are detected to realize the functions of indicating the working state and protecting the fault of the transmitting assembly.
Drawings
In order to facilitate understanding for those skilled in the art, the present invention will be further described with reference to the accompanying drawings.
Fig. 1 is a system circuit diagram of the present invention;
fig. 2 is a circuit diagram of a 30W amplifier of the present invention;
fig. 3 is a circuit diagram of an 800W amplifier of the present invention;
fig. 4 is a circuit diagram of the power supply board of the present invention.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1-4, a miniaturized S-band transmitter includes a PIN switch, a first stage amplifier, a second stage amplifier, a third stage amplifier, and a first stage amplifier, 1: 5 series feed distributor, 5: 1, a series-fed synthesizer, a first bridge, a second bridge and a BITE circuit in the component; PIN switch input links to each other with input excitation power, and PIN switch output links to each other with first-stage amplifier input, and first-stage amplifier output links to each other with second amplifier input, and second amplifier output is connected with the isolator, the isolator output and 1: 5 the input ends of the series-fed distributors are connected, 1: 5 the second amplifier output power is divided into 5 paths of output by the series feed divider, 1: 5 five groups of output ends of the series-fed distributor are respectively connected with a third-stage amplifier through a group of first electric bridges, five output ends of the third-stage amplifier are respectively connected with a group of second electric bridges, and five output ends of the second electric bridges are respectively connected with 5: 1, connecting input ends of series-fed synthesizers, 5: 1, the output end of the series-fed synthesizer outputs a total power signal, and a BITE circuit and PIN switch in the component and 5: 1 series-fed synthesizer.
The first-stage amplifier comprises a group of 30W amplifiers, the used power tube is BLS6G2735L-30, the 30W amplifier is a high-gain amplifier, the input power is only 1.5W, the input power is one tenth of the input power of the original transmitting assembly, and the requirement on the input power is low.
The second stage amplifier comprises a 350W amplifier, and the used power tube is BLS7G 2729L-350P.
The third-stage amplifier comprises ten 350W amplifiers, each two 350W amplifiers form a group, the ten 350W amplifiers are arranged in parallel, and the type of the used power tube is BLS7G 2729L-350P.
The ten 350W amplifier output ends of the third-stage amplifier are all connected with isolators used for protecting power tubes and absorbing reflected power in the circuit.
The first-stage amplifier and the second-stage amplifier are arranged on the first group of power supply boards, and the ten 350W amplifiers of the third-stage amplifier are arranged on the remaining five groups of power supply boards in a group of every two 350W amplifiers.
The power supply board is provided with a voltage detection port, the voltage detection port is connected with a corresponding amplifier mounted on the corresponding power supply board, and the voltage detection port can be used for rapidly detecting and positioning which amplifiers are failed.
The PIN switch is provided with a group of TTL control ports, the TTL control ports are connected with a BITE circuit in the component, and the PIN switch is in a conducting state when the TTL is at a high level; when TTL low level, PIN switch is in the off-state, because PIN switch is the radio frequency input end device of emission subassembly, can be through the operating condition control emission subassembly of control PIN switch operating condition control.
The working principle is as follows: when the utility model is used, the 1.5W input power entering the transmitting component firstly enters the PIN switch, the on-off of the PIN switch is controlled by the TTL control signal on the PIN switch, and when the TTL is at a low level, the PIN switch is cut off; when TTL high level, PIN switch switches on, and the input power signal of emission subassembly sends into the input of first order 30W amplifier behind the PIN switch.
An input signal entering a 30W amplifier firstly passes through a section of microstrip transmission line, one end of the microstrip transmission line is connected with one end of a blocking capacitor C3, the other end of the C3 is connected with a grid of a power tube V1, the input power of the 30W amplifier enters the grid of a power tube V1 after passing through a blocking capacitor C3, the grid of the power tube V1 is connected with one ends of a matching resistor R4 and a matching capacitor C2, the other end of the matching capacitor C2 is grounded, the other end of the matching resistor R4 is connected with a resistor R3, the other end of the resistor R3 is connected with a grid power supply V0 and an energy storage capacitor C1, the other end of the energy storage capacitor C1 is grounded, and the input impedance of the power tube V1 is converted into 50 omega through the matching resistor R4, the. The source of the power tube V1 is grounded, the drain of the power tube V1 is connected with the matching capacitor C4, the energy storage capacitor C5, the energy storage capacitor C6 and the blocking capacitor C7, the other ends of the matching capacitor C4, the energy storage capacitor C5 and the energy storage capacitor C6 are grounded, the other end of the blocking capacitor C7 is connected with the microstrip transmission line, and the output impedance of the power tube V1 is converted into 50 omega through the matching resistor R4, the matching capacitor C2 and the microstrip transmission line. The output power amplified by the 30W amplifier is output through the microstrip transmission line.
The output power of the 30W amplifier is input to the input end of the second stage 350W amplifier and used as the input power of the 350W amplifier to drive the 350W amplifier to work, the input signal of the 350W amplifier firstly passes through a section of microstrip transmission line, one end of the microstrip transmission line is connected with one end of a blocking capacitor C7, the other end of the blocking capacitor C7 is connected with the grid electrodes of a power tube V1 and a power tube V2, the grid electrode of the power tube V1 is connected with one end of a matching resistor R8 and a matching capacitor C6, the other end of an energy storage capacitor C6 is grounded, the other end of the matching resistor R8 is connected with one end of a resistor R6, the other end of the resistor R6 is connected with a grid power supply V0 and an energy storage capacitor C2; the grid of the power tube V2 is connected with one end of a matching resistor R7 and a matching capacitor C5, the other end of the matching capacitor C5 is grounded, the other end of the matching resistor R7 is connected with one end of a resistor R5, the other end of the resistor R5 is connected with a grid power supply V0 and an energy storage capacitor C1, and the other end of the energy storage capacitor C1 is grounded. The input impedance of the power tubes V1 and V2 is converted into 50 Ω by matching resistors, capacitors and microstrip transmission lines. The sources of the power tubes V1 and V2 are grounded, the drain of the power tube V1 is connected with one ends of the matching capacitors C10 and C12, and the other ends of the energy storage capacitors C4, C10 and C12 are grounded; the drain of the power tube V2 is connected with one end of the matching capacitors C9 and C11, and the other end of the energy storage capacitors C3, C9 and C11 is grounded. The output impedance of the power tubes V1 and V2 is converted into 50 omega through a matching resistor, a capacitor and a microstrip transmission line. The radio frequency power input to the 350W amplifier is amplified by the power tubes V1 and V2, and the amplified output power is output to the DC blocking capacitor C8 through the synthesizer and is output through the output end microstrip transmission line.
The output end of the 350W amplifier is connected with an isolator for absorbing the reflected power of the back end to protect the 350W amplifier, and the output power of the 350W amplifier is sent into a 1: 5 series-fed distributor, 1: the 5 series-fed distributor is divided into 5 paths, each path of output signal is divided into two paths through an electric bridge to form ten paths of radio frequency signals, each path of radio frequency signal is sent to a third-stage 350W amplifier which is the same as the second-stage 350W amplifier, and the output end of each 350W amplifier is connected with an isolator for over-reflection protection of the 350W amplifier. The output signals of the ten paths of 350W amplifiers passing through the isolator are respectively sent to five electric bridges for power synthesis to form five paths of radio frequency power signals about 650W, and the five paths of radio frequency power signals about 650W respectively enter the same 5: 1 input port of a series-fed synthesizer, 5: the 1 series-fed synthesizer forms total output power with total power of about 3000W after synthesis.
One of six power supply boards arranged in the transmitting assembly supplies power to the 30W amplifier and the 350W amplifier in the second stage, and the other five power supply boards respectively supply power to 2 of the ten 350W amplifiers in the third stage. The power supply board is provided with a voltage detection port, and the voltage detection port can be used for rapidly detecting and positioning which amplifiers are in failure.
As shown in fig. 4, X1 and X2 are input ports of a power supply, X3 and X4 are output ports of the power supply, X2 and X4 are ground terminals of the power supply, X1 and X3 are positive terminals of the power supply, C1 and C2 are energy storage capacitors, 8 discharge resistors R4 to R11 are connected in parallel between the positive terminals of the power supply and the ground, and the energy storage capacitors are discharged by the discharge resistors when the system is powered off. A resistor R3 with low resistance is connected in series between the ports X1 and X3, when the system works, the resistor R3 has larger working current, a smaller voltage drop is generated on the resistor R3, and the voltage value is in direct proportion to the working current. X5 and X6 are voltage detection ports, a resistor R1 with a larger resistance value is connected between X1 and X5 in series, a resistor R2 with a larger resistance value is connected between X2 and X6 in series, voltage drop of the R3 can be detected at the voltage detection ports X5 and X6 by using a three-purpose meter, the value of working current of the system can be judged by the voltage drop of R3, and the working state of each amplifier in the transmitting assembly can be rapidly detected and judged by the size of coupling voltage on 6 power supply boards.
The PIN switch at the input end of the transmitting component is provided with an input coupling port, and an input signal coupled through the coupling port is transmitted to a BITE circuit in the component; 5: the 1 series-fed synthesizer is provided with an output coupling port, and an output signal coupled through the coupling port is transmitted to a BITE circuit in the component; the BITE circuit in the assembly detects and judges the input and output signals and then indicates the working state of the assembly. The BITE circuit in the component simultaneously judges a starting command, an over-temperature signal, an over-voltage signal and the like of the component, when the over-temperature signal and the over-voltage signal are normal and the starting command exists, the BITE circuit in the component outputs an RF door pocket signal to the PIN switch to enable the PIN switch to be switched on and further control the transmitting component to work, otherwise, the BITE circuit in the component outputs a low level signal to the PIN switch, and the transmitting component stops working.
The preferred embodiments of the present invention disclosed above are intended only to help illustrate the present invention. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical applications, to thereby enable others skilled in the art to best understand the invention for and utilize the invention. The present invention is limited only by the claims and their full scope and equivalents.
Claims (8)
1. A miniaturized S-band transmit assembly, comprising: including PIN switch, first level amplifier, second level amplifier, third level amplifier, 1: 5 series feed distributor, 5: 1, a series-fed synthesizer, a first bridge, a second bridge and a BITE circuit in the component; PIN switch input links to each other with input excitation power, and PIN switch output links to each other with first-stage amplifier input, and first-stage amplifier output links to each other with second amplifier input, and second amplifier output is connected with the isolator, the isolator output and 1: 5 the input ends of the series-fed distributors are connected, 1: 5 the second amplifier output power is divided into 5 paths of output by the series feed divider, 1: 5 five groups of output ends of the series-fed distributor are respectively connected with a third-stage amplifier through a group of first electric bridges, five output ends of the third-stage amplifier are respectively connected with a group of second electric bridges, and five output ends of the second electric bridges are respectively connected with 5: 1, connecting input ends of series-fed synthesizers, 5: 1, the output end of the series-fed synthesizer outputs a total power signal, and a BITE circuit and PIN switch in the component and 5: 1 series-fed synthesizer.
2. A miniaturized S-band transmit module according to claim 1, characterized in that said first stage amplifier comprises a set of 30W amplifiers, using power transistors of the type BLS6G 2735L-30.
3. A miniaturized S-band transmit module as claimed in claim 1, characterized in that said second stage amplifier comprises a set of 350W amplifiers using power transistors of the type BLS7G 2729L-350P.
4. A miniaturized S-band transmitter module as claimed in claim 1, wherein said third stage amplifier comprises ten 350W amplifiers, one set of two 350W amplifiers, and ten 350W amplifiers arranged in parallel, and the power transistors used are of the type BLS7G 2729L-350P.
5. The miniaturized S-band transmitter module according to claim 4, wherein the ten 350W amplifier outputs of the third stage amplifier are connected with isolators for protecting the power transistors and absorbing the reflected power in the circuit.
6. A miniaturized S-band transmitter module according to claim 4, further comprising six power supply boards, wherein the first stage amplifier and the second stage amplifier are mounted on the first power supply board, and the third stage amplifier is composed of ten 350W amplifiers, and each two 350W amplifiers are mounted on the remaining five power supply boards.
7. A miniaturized S-band transmitter module according to claim 6, characterized in that said supply boards are provided with voltage detection ports connected to corresponding amplifiers mounted on the corresponding supply boards.
8. The miniaturized S-band transmitter module of claim 1 wherein the PIN switch has a set of TTL control ports that are connected to the BITE circuitry in the module, the PIN switch being in an on state at a TTL high level; when TTL is low, PIN switch is in cut-off state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022952858.1U CN213461723U (en) | 2020-12-08 | 2020-12-08 | Miniaturized S-band transmitting assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022952858.1U CN213461723U (en) | 2020-12-08 | 2020-12-08 | Miniaturized S-band transmitting assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213461723U true CN213461723U (en) | 2021-06-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022952858.1U Expired - Fee Related CN213461723U (en) | 2020-12-08 | 2020-12-08 | Miniaturized S-band transmitting assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213461723U (en) |
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2020
- 2020-12-08 CN CN202022952858.1U patent/CN213461723U/en not_active Expired - Fee Related
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Granted publication date: 20210615 |
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