CN213459741U - Two-dimensional indium selenide-based optical storage device - Google Patents
Two-dimensional indium selenide-based optical storage device Download PDFInfo
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- CN213459741U CN213459741U CN202022362007.1U CN202022362007U CN213459741U CN 213459741 U CN213459741 U CN 213459741U CN 202022362007 U CN202022362007 U CN 202022362007U CN 213459741 U CN213459741 U CN 213459741U
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Abstract
The invention relates to a two-dimensional indium selenide-based optical storage device which is characterized by comprising a metal strip, two-dimensional indium selenide, graphite and SiO2A layer, a Si layer and chromium; SiO 22/Si is used as a substrate, a chromium layer is arranged on the substrate, two metal strips are arranged on the chromium layer and used as electrodes, and channels are arranged between the two metal strips; a metal electrode is provided with a few layers of graphite, the surface of the electrode on one side is fully covered on the edge of the inner side of the electrode, and the electrode on the other side is not lapped; the two-dimensional indium selenide thin sheet is lapped between the metal electrode and the graphite electrode on the other side to form a metal-two-dimensional indium selenide-graphite Schottky diode; wherein the metal electrode is connected with the anode of the voltage source, and the graphite electrode is connected with the cathode of the voltage source. When the optical storage device works, the control of the logic state of the device can be realized only by regulating and controlling the voltage between the source electrode and the drain electrode and external illumination, a larger grid voltage is not required to be introduced, and the circuit connection of the device during working is simplified.
Description
Technical Field
The invention belongs to an optical storage device, and relates to a two-dimensional indium selenide-based optical storage device.
Background
In the past few decades, advances in semiconductor technology, which have been the main functions of data storage, information retrieval, and transmission and processing thereof, have greatly promoted the development of human society. Of these, development and use of new optical memory devices based on nanotechnology and new material technology are of particular interest. The optical memory device is a novel memory device which comprehensively utilizes the optical response characteristic and the electrical transport characteristic of a semiconductor material and a heterostructure thereof, can simultaneously realize multiple functions of optical detection, data storage, data processing and the like in one device unit, and has important theoretical significance and practical value in research and development. Compared with the traditional bulk semiconductor material, the two-dimensional semiconductor material has rich varieties and various performances, has the thickness of a naturally passivated surface and an atomic layer level, is easier to realize the controllable preparation of a function-diversified device, and is an ideal material for constructing a high-performance optical storage device. Up to now, a variety of optical memory devices based on two-dimensional materials such as graphene and molybdenum disulfide and heterostructures thereof have been successfully prepared. However, most of the two-dimensional optical storage devices reported at present are based on symmetric field effect transistors, and on one hand, the device structure is more complex and the requirement on the preparation process is higher; on the other hand, such devices generally implement writing, reading and erasing of bytes by controlling a larger gate voltage, and have a larger operating current, which is not easy to reduce power consumption. Therefore, it is of great significance to design and construct a novel optical storage device based on two-dimensional materials, which has simple structure and low energy consumption. The two-dimensional indium selenide material has excellent electrical transport performance, mechanical performance and optical response characteristics, and is one of the most promising two-dimensional semiconductor materials such as graphene, molybdenum disulfide, black phosphorus and the like. The Schottky diode based on the two-dimensional indium selenide material has excellent performance, is easy to prepare, has good application prospect in the fields of electronics and photoelectrons, but no report based on the type of optical storage device exists at present.
Disclosure of Invention
Technical problem to be solved
In order to avoid the defects of the prior art, the invention provides a two-dimensional indium selenide-based optical storage device, which overcomes the defects of high working voltage and large working current of the conventional two-dimensional material symmetric field effect transistor-based optical storage device and fills the application field of a two-dimensional material Schottky diode in the optical storage device.
Technical scheme
A two-dimensional indium selenide-based optical storage device is characterized by comprising a metal strip, two-dimensional indium selenide, graphite and SiO2Si and chromium; SiO 22The substrate is made of/Si, a chromium layer is arranged on the substrate, two metal strips are arranged on the chromium layer and used as electrodes, and a channel is arranged between the two metal strips; a metal electrode is provided with a few layers of graphite, the surface of the electrode on one side is fully covered on the edge of the inner side of the electrode, and the electrode on the other side is not lapped; the two-dimensional indium selenide thin sheet is lapped between the metal electrode and the graphite electrode on the other side to form a metal-two-dimensional indium selenide-graphite Schottky diode; wherein the metal electrode is connected with the anode of the voltage source, and the graphite electrode is connected with the cathode of the voltage source.
The thickness of the two metal strips is 30 nm.
The metal strip is gold or platinum.
The thickness of the chromium is 5 nm.
The channel width between the two metal electrodes was 30 μm.
Advantageous effects
The invention provides a two-dimensional indium selenide-based optical storage device which is characterized by comprising metal 1, two-dimensional indium selenide 2, graphite 3 and SiO2Layer 4, Si layer 5 and chromium 6; SiO 22The substrate is made of/Si, a chromium layer is arranged on the substrate, two metal strips are arranged on the chromium layer and used as electrodes, and a channel is arranged between the two metal strips; a metal electrode is provided with a few layers of graphite, the surface of the electrode on one side is fully covered on the edge of the inner side of the electrode, and the electrode on the other side is not lapped; the two-dimensional indium selenide thin sheet is lapped between the metal electrode and the graphite electrode on the other side to form a metal-two-dimensional indium selenide-graphite Schottky diode; wherein the metal electrode is connected with the anode of the voltage source, and the graphite electrode is connected with the cathode of the voltage source. Compared with the symmetrical field effect transistor optical storage device based on the two-dimensional material reported in the background technology, the optical storage device can realize the control of the logic state of the device only by regulating and controlling the voltage between the source electrode and the drain electrode and external illumination when in work, does not need to introduce larger grid voltage, and simplifies the circuit connection when the device works. Meanwhile, the current of the device during operation is reduced from microampere (muA) level of the background technology to nanoampere (nA) level, so that the purpose of reducing energy consumption is achieved.
The method utilizes the current hysteresis effect under the forward bias condition in the current-voltage characteristic under the illumination condition to control the output current of the device through the applied voltage and the illumination, thereby realizing the logic state and the optical storage function of the device. The method can stably prepare the novel optical storage device with simple structure and low energy consumption.
Drawings
Fig. 1 is a schematic diagram of a two-dimensional indium selenide-based optical memory device structure according to the invention.
Wherein: metal 1, two-dimensional indium selenide 2, graphite 3, SiO2Layer 4, Si layer 5, chromium 6;
fig. 2 is a current-voltage characteristic curve under the dark field and bright field conditions of sample No. 1 of the optical storage device of embodiment 1 of the present invention.
Fig. 3 is a logic state implementation sample of the optical memory device according to embodiment 1 of the method of the present invention.
Fig. 4 is a logic state implementation sample of the optical memory device according to embodiment 2 of the method of the present invention.
Fig. 5 is a logic state implementation sample of the optical memory device according to embodiment 3 of the method of the present invention.
Detailed Description
The invention will now be further described with reference to the following examples and drawings:
example 1:
the two-dimensional indium selenide-based optical storage device is characterized by comprising metal, two-dimensional indium selenide, graphite and SiO2Si and chromium; SiO 22The device comprises a substrate, a channel, a metal strip, a substrate, a metal layer and a substrate, wherein the substrate is provided with a 5nm chromium layer, the chromium layer is provided with two metal strips, namely 30nm platinum, which are used as electrodes, and the two metal strips are mutually provided with the channel; a few layers of 20nm graphite are arranged on one metal electrode, the surface of the electrode on one side is fully covered on the edge of the inner side of the electrode, and the electrode on the other side is not lapped; a 17nm two-dimensional indium selenide sheet is lapped between the metal electrode and the graphite electrode on the other side to form a metal-two-dimensional indium selenide-graphite Schottky diode; wherein the metal electrode is connected with the anode of the voltage source, and the graphite electrode is connected with the cathode of the voltage source.
The channel distance between the electrodes was 30 μm.
High vacuum at room temperature (10)-6mbar), the optical storage function of the platinum-two-dimensional indium selenide-graphite Schottky diode is tested. During test writing-reading, under the condition of illumination, the voltage source is enabled to output voltage of 10V and is kept for 150s (writing state), then the light source is turned off and is enabled to output voltage of 0V, then the time is kept for 150s (idle state), the light source is kept turned off, then the voltage of the voltage source is adjusted to be 3V, the time is kept for 150s, and current I is recorded1(read state). During test erasing-reading, setting voltage source voltage of-5V under illumination condition, maintaining for 150s (erasing state), turning off light source to make voltage source output voltage be 0V, maintaining for 150s (idle state), turning off light source to make voltage source output voltage be 3V, maintaining for 150s and recording current I0(read-out state) with the optical memory device logic state implementation as for example in fig. 3.
The embodiment successfully constructs the optical memory device based on the platinum-two-dimensional indium selenide-graphite Schottky diode.
Example 2:
the two-dimensional indium selenide-based optical storage device is characterized by comprising metal, two-dimensional indium selenide, graphite and SiO2Si and chromium; SiO 22The silicon/silicon (Si) is used as a substrate, a 5nm chromium layer is arranged on the substrate, two metal strips of 30nm platinum are arranged on the chromium layer and used as electrodes, and channels of 30 micrometers are arranged between the two metal strips; a few layers of 20nm graphite are arranged on one metal electrode, the surface of the electrode on one side is fully covered on the edge of the inner side of the electrode, and the electrode on the other side is not lapped; a 24nm two-dimensional indium selenide sheet is lapped between the metal electrode and the graphite electrode on the other side to form a metal-two-dimensional indium selenide-graphite Schottky diode; wherein the metal electrode is connected with the anode of the voltage source, and the graphite electrode is connected with the cathode of the voltage source.
The channel distance between the electrodes was 30 μm.
High vacuum at room temperature (10)-6mbar), dark field and bright field current-voltage characteristic curve tests were performed on the platinum-two-dimensional indium selenide-graphite schottky diode using a Keithley 2450 ammeter. During testing, the platinum electrode of the Schottky diode is connected with the positive electrode of a voltage source, and the graphite electrode is connected with the negative electrode of the voltage source, so that the metal platinum-two-dimensional indium selenide-graphite Schottky diode is in a state of being conducted under positive bias and being cut off under negative bias.
High vacuum at room temperature (10)-6mbar), the optical storage function of the platinum-two-dimensional indium selenide-graphite Schottky diode is tested. During test writing-reading, the voltage source is enabled to output 4V under the illumination condition and is kept for 40s (writing state), then the light source is turned off and is enabled to output 0V, the time is kept for 40s (idle state), the light source is kept turned off, then the voltage of the voltage source is adjusted to 1V, the time is kept for 40s, and the current I is recorded1(read state). During test erasing-reading, setting voltage source voltage-5V under illumination condition, maintaining for 40s (erasing state), turning off light source to make voltage source output voltage 0V, maintaining for 40s (idle state), turning off light source to make voltage source output voltage 1V, maintaining for 40s and recording current I0(read-out state) whose optical memory device logic state implementation is as in fig. 4, for example.
The embodiment successfully constructs the optical memory device based on the platinum-two-dimensional indium selenide-graphite Schottky diode.
Example 3:
the two-dimensional indium selenide-based optical storage device is characterized by comprising metal, two-dimensional indium selenide, graphite and SiO2Si and chromium; SiO 22The device comprises a substrate, a 30nm chromium layer arranged on the substrate, two metal strips, namely 30nm platinum arranged on the chromium layer and used as electrodes, and channels of 30 micrometers arranged between the two metal strips; a few layers of 205nm graphite are arranged on one metal electrode, the inner side edge of the electrode is fully covered from the surface of the single-side electrode, and the other side electrode is not lapped; a 28nm two-dimensional indium selenide sheet is lapped between the metal electrode and the graphite electrode on the other side to form a metal-two-dimensional indium selenide-graphite Schottky diode; wherein the metal electrode is connected with the anode of the voltage source, and the graphite electrode is connected with the cathode of the voltage source.
High vacuum at room temperature (10)-6mbar), dark field and bright field current-voltage characteristic curve tests were performed on the platinum-two-dimensional indium selenide-graphite schottky diode using a Keithley 2450 ammeter. During testing, the platinum electrode of the Schottky diode is connected with the positive electrode of a voltage source, and the graphite electrode is connected with the negative electrode of the voltage source, so that the metal platinum-two-dimensional indium selenide-graphite Schottky diode is in a state of being conducted under positive bias and being cut off under negative bias.
High vacuum at room temperature (10)-6mbar), the optical storage function of the platinum-two-dimensional indium selenide-graphite Schottky diode is tested. During test writing-reading, under the condition of illumination, the voltage source is enabled to output voltage of 10V and is kept for 9s (writing state), then the light source is turned off and is enabled to output voltage of 0V, then the time is kept for 9s (idle state), the light source is kept turned off, then the voltage of the voltage source is adjusted to 1V, the time is kept for 9s, and current I is recorded1(read state). During test erasing-reading, setting voltage source voltage-10V under illumination condition, maintaining for 9s (erasing state), turning off light source to make voltage source output voltage 0V, maintaining for 9s (idle state), turning off light source to make voltage source output voltage 1V, maintaining for 9s and recording current I0(read-out state) whose optical memory device logic state implementation is as in fig. 5.
Claims (5)
1. A two-dimensional indium selenide-based optical storage device is characterized by comprising a metal strip, two-dimensional indium selenide, graphite and SiO2Si and chromium; SiO 22The substrate is made of/Si, a chromium layer is arranged on the substrate, two metal strips are arranged on the chromium layer and used as electrodes, and a channel is arranged between the two metal strips; a metal electrode is provided with a few layers of graphite, the surface of the electrode on one side is fully covered on the edge of the inner side of the electrode, and the electrode on the other side is not lapped; the two-dimensional indium selenide thin sheet is lapped between the metal electrode and the graphite electrode on the other side to form a metal-two-dimensional indium selenide-graphite Schottky diode; wherein the metal electrode is connected with the anode of the voltage source, and the graphite electrode is connected with the cathode of the voltage source.
2. The two-dimensional indium selenide-based optical storage device according to claim 1, wherein: the thickness of the two metal strips is 30 nm.
3. The two-dimensional indium selenide-based optical storage device according to claim 1 or 2, wherein: the metal strip is gold or platinum.
4. The two-dimensional indium selenide-based optical storage device according to claim 1, wherein: the thickness of the chromium is 5 nm.
5. The two-dimensional indium selenide-based optical storage device according to claim 1, wherein: the channel width between the two metal strip electrodes was 30 μm.
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